CN1057125A - 具有垂直汽相淀积工艺形成的发射极的非平面场发射器件 - Google Patents
具有垂直汽相淀积工艺形成的发射极的非平面场发射器件 Download PDFInfo
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- CN1057125A CN1057125A CN91100957.4A CN91100957A CN1057125A CN 1057125 A CN1057125 A CN 1057125A CN 91100957 A CN91100957 A CN 91100957A CN 1057125 A CN1057125 A CN 1057125A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Abstract
具有锥形发射极112,208的冷阴极场发射器
件,发射极用基本垂直(但不绝对垂直)的汽相淀积过
程109形成,其中,衬底101,201无需相对汽相淀积
靶旋转。汽相淀积过程形成一封装层111,207,它可
用作完成器件中的电极或被去掉以利其它层的形
成。
Description
本发明涉及冷阴极场发射器件,特别涉及电极基本上非平面排列的发射器件的形成。
冷阴极发射器件(FED)是本领域的公知技术,FED有两个或更多个电极,包括一个发射极和一个集电极。此外,还可包括一个或多个栅极以调节器件的工作。
具有基本上非平面排列的电极的FED已是公知的。在一种先有技术实施方案中,发射极构成一锥形体。利用一基本上垂直的汽相淀积工艺和一低角汽相淀积工艺(通常同时使用)来形成锥形。基本上垂直的汽相淀积工艺提供材料以支持构成发射极锥体,而低角汽相淀积工艺保证一小孔的逐渐关闭,该孔越来越限制从垂直淀积过程来的材料的引入,从而形成截面逐渐缩小的锥形体。
上述过程导致一系列问题。例如,其上形成有FED的衬底在低角汽相淀积过程中必须连续转动以便保证小孔对称闭合。如果没有这种对称闭合,得到的发射极锥形体可能是畸形的,并且可能不能有效地支持其预定目的。另一个例子是,垂直和低角汽相淀积过程通常同时进行。由于这两个过程一般会导致不同材料的沉积,必须除去形成的封闭层(由各种材料混合而成)以便能提供一个有用的器件。
因此,需要一种基本上能避免至少一部分上述问题的形成基本上非平面的FED的方法。
本发明所公开的FED形成方法基本上满足了这些需要。根据本发明,一个具有腔体的壳体为后续基本垂直(但不是绝对垂直)的汽相淀积过程提供了基础,它使得一基本对称的发射极锥体能在腔体中形成。在此过程中,腔体以基本对称的方式逐渐闭合,从而使发射极锥形体易于形成。
这种方法不需要用低角汽相淀积工艺来闭合腔体的孔。相反,由于所用的汽相淀积工艺是基本(不是绝对)垂直的,因而沉积粒子有充分的横向移动,足以保证材料被淀积到腔体开口的侧面,从而在工艺过程中闭合腔体。
在本发明的一个实施例中,上部封装层在发射极形成后被去掉,以使后续工艺步骤能继续进行。
根据本发明的另一实施例,将封装层保留并用作所得器件的一个电极。
图1a~1f示出了在形成本发明FED的一个实施例时各步骤所得结构的放大的侧剖图;
图2a~2c示出了在形成本发明的FED的另一个实施例时各步骤所得结构的放大的侧剖图。
根据本发明的一个实施例,衬底101(图1a)可有根据公知的沉积技术而沉积于其上的一层介质层102,金属化层103以及光敏抗蚀剂层104。而后可以有选择地将光敏抗蚀剂暴光和显影,可通过腐蚀工艺去掉光敏抗蚀层104和金属化层103的选定部分(图1b)。
而后可用活性离子蚀刻工艺去掉介质层102的选定部分以形成腔体的延续部分107。在此实施例中,去掉的介电材料(102)的量应是以使衬底101的一部分暴露出来。在此实施例中还示出了介质材料102的蚀刻可连续进行直到建立起一侧凹槽。这种侧凹槽虽不是必须的,但在需要时它将在后续工艺中协助去掉多余的金属。
如本领域中公知的那样,当向一由所需导电沉积材料构成的汽相淀积靶(未示出)加能量时,一基本垂直(不是绝对)的汽相淀积过程就开始了。汽化的材料以与衬底101基本垂直的方向109移动,并沉积在腔体中和光敏抗蚀层104上。落入腔体底部的材料形成发射极锥形体112。落在光敏抗蚀层104上的材料形成封装层111。
由于汽相淀积材料基本上相对于要形成的器件垂直(但不是统计上的绝对)移动,所以某些材料粒子有一横向移动分量。这些粒子中的一些沉积在腔体的侧壁上,并逐渐堵塞腔体上的孔。随着孔的闭合,进入腔体的材料越来越少,从而基本上能满足一锥形发射极112的形成。如果需要,衬底不必相对于汽相淀积靶旋转。
最后,腔体的孔将被完全封住。这时发射极锥体112将全部完成(图1e)。而后,可通过已知的方法去掉沉积的上部金属层111和居中的光敏抗蚀层104以提供衬底101,介质层102和金属化层103,包括形成在腔体中的锥形发射极112(图1f)。此后,可根据公知的先有技术加上附加的介质层、绝缘层和/或金属化层及封装层,以便制成一个具有所期望的电极结构和工作特性的场发射器件。此后所用的特殊结构与理解本发明无关,因而不再详述。
根据本发明的另一实施例,仍参看图1a,可先提供一由衬底101、介质102、金属化层103、绝缘层104以及光敏抗蚀层113构成的原始壳体。而后可通过刻蚀金属化层103,绝缘层104和光敏抗蚀层113形成一腔体106。如图1b所示,此后可刻蚀介质层102以完成一腔体107。用汽相淀积工艺在腔体内沉积导电材料以形成发射极112(如上所述),并在绝缘层104上沉积导电材料。所得到的器件示于图1e,其中,该器件由衬底101,介质层102,金属化层103(可作栅极),一绝缘层104和一可作集电极的金属化层111(不像先有技术那样,封装层由不适合此功能和目的的材料的混合物构成)。发射极锥形体112位于密封的腔体中。(如果在被抽空的气氛中进行汽相淀积过程,腔体被进一步抽真空以支持器件运行过程中所需的电子发射)。
现在参照2a-2c说明本发明的另一实施例,在第一实施例中,该过程先提供一由衬底201,介质层202,第一金属化层203,第二介质层204,第二金属化层205和光敏抗蚀层206构成的壳体(见图2a)。如上所述,利用材料刻蚀工艺去掉所有预定部分但保留衬底层,以形成腔体209(图2b)。再用一基本上垂直(但不是绝对垂直)的汽相淀积工艺将材料沉积在腔体209中以形成锥形发射极208,并在光敏抗蚀层上沉积一封装层207,而后可去掉封装层207和光敏抗蚀层206,以提供一具有发射极208和可作为一完成器件栅极的两金属化层203和205的器件。
器件可用与理解本发明无关的各种方法完成。因而,不必详述。
在另一实施例中,第二金属化层205可加一层绝缘层206(图2a)。而后可在绝缘层206上沉积一光敏抗蚀层211。可向前述那样继续进行刻蚀过程,以形成腔体209,在去掉光敏抗蚀层211之后,可用汽相淀积方法形成发射极208及在绝缘层206上的封装金属化层207,以形成基本上完整的器件,如图2b所示。该器件包括发射极208,两栅极203和205以及集电极207。
在其它实施例中,可利用连续沉积和/或氧化生长来形成绝缘层和/或介质层,以便提供一绝缘/介质层,它在一定器件内有电场时,不会被击穿。
Claims (8)
1、一种形成基本上非平面的冷阴极场发射器件的方法,其特征在于下列步骤:
a)提供一具有腔体107的坯体;
b)只利用基本上垂直(但不绝对垂直)的汽相淀积工艺109在腔体内形成一发射极112,其中,腔体在汽相淀积过程中被逐渐封闭。
2、权利要求1的方法,其中提供具有腔体的坯体的步骤包括:
a1)提供一衬底101;
a2)在衬底上至少形成一层沉积层102,103和104;
a3)去掉至少一层沉积层的一部分从而形成腔体107。
3、权利要求2的方法,其中去掉至少一层沉积层的一部分的步骤包括去掉适量的沉积层以暴露衬底的一部分的步骤。
4、权利要求3的方法,其中在腔体内形成发射极的步骤包括形成发射极使其与衬底的暴露部分的至少一部分接触。
5、权利要求2的方法,其中至少一层沉积层为光敏抗蚀剂层104,利用汽相淀积法形成发射极的步骤还包括通过汽相淀积法在光敏抗蚀剂层上沉积材料的步骤。
6、权利要求1的方法,其中,在汽相淀积过程中只利用预定材料封闭腔体。
7、一种形成基本上非平面的冷阴极场发射器件的方法,其特征在于下列步骤:
a)提供一其上形成有腔体的坯体;
b)激发汽相淀积靶,以进行汽相淀积过程,其中靶和坯体相对保持基本固定,在汽相淀积过程中,腔体逐渐封闭,从而在腔体中形成发射极112。
8、一种形成基本上非平面的冷阴极场发射器件的方法,包括下列步骤:
a)提供一衬底101;
b)在衬底上至少形成一层介质层102;
c)在介质层上形成一金属化层;
d)在金属化层上形成一光敏抗蚀剂层;
e)去掉光敏抗蚀剂层、金属化层和介质层的预定部分,从而形成至少一个具有开口的腔体107;
f)激发汽相淀积靶,进行汽相淀积过程109,其中靶与衬底相互基本固定,在汽相淀积过程中,腔体逐渐闭合,从而在腔体内形成一发射极112。
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US07/477,694 US5007873A (en) | 1990-02-09 | 1990-02-09 | Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process |
US477,694 | 1990-02-09 |
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CN1057125A true CN1057125A (zh) | 1991-12-18 |
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US (1) | US5007873A (zh) |
EP (1) | EP0468036B1 (zh) |
JP (1) | JPH04506280A (zh) |
CN (1) | CN1057125A (zh) |
DE (1) | DE69112531T2 (zh) |
WO (1) | WO1991012627A1 (zh) |
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JPS5325632B2 (zh) * | 1973-03-22 | 1978-07-27 | ||
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-
1990
- 1990-02-09 US US07/477,694 patent/US5007873A/en not_active Expired - Lifetime
-
1991
- 1991-01-18 DE DE69112531T patent/DE69112531T2/de not_active Expired - Fee Related
- 1991-01-18 EP EP91904624A patent/EP0468036B1/en not_active Expired - Lifetime
- 1991-01-18 JP JP3504870A patent/JPH04506280A/ja active Pending
- 1991-01-18 WO PCT/US1991/000591 patent/WO1991012627A1/en active IP Right Grant
- 1991-02-08 CN CN91100957.4A patent/CN1057125A/zh active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105609546A (zh) * | 2014-11-18 | 2016-05-25 | 意法半导体股份有限公司 | 包括空沟槽结构的半导体器件及其制造方法 |
CN105609546B (zh) * | 2014-11-18 | 2019-07-09 | 意法半导体股份有限公司 | 包括空沟槽结构的半导体器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0468036B1 (en) | 1995-08-30 |
EP0468036A4 (en) | 1992-07-08 |
JPH04506280A (ja) | 1992-10-29 |
WO1991012627A1 (en) | 1991-08-22 |
DE69112531T2 (de) | 1996-04-18 |
US5007873A (en) | 1991-04-16 |
EP0468036A1 (en) | 1992-01-29 |
DE69112531D1 (de) | 1995-10-05 |
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