CN1082219C - 磁存储器及磁存储器中使用的磁记录媒体 - Google Patents
磁存储器及磁存储器中使用的磁记录媒体 Download PDFInfo
- Publication number
- CN1082219C CN1082219C CN96110204A CN96110204A CN1082219C CN 1082219 C CN1082219 C CN 1082219C CN 96110204 A CN96110204 A CN 96110204A CN 96110204 A CN96110204 A CN 96110204A CN 1082219 C CN1082219 C CN 1082219C
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- Prior art keywords
- magnetic
- recording medium
- magnetosphere
- magnetic recording
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- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 324
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- 239000000696 magnetic material Substances 0.000 claims abstract description 29
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- 230000000694 effects Effects 0.000 claims description 22
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- 238000011069 regeneration method Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 13
- 230000004907 flux Effects 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910018979 CoPt Inorganic materials 0.000 claims description 7
- 230000005415 magnetization Effects 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052582 BN Inorganic materials 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 5
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 5
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 abstract description 38
- 150000004767 nitrides Chemical class 0.000 abstract description 12
- 239000000203 mixture Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 52
- 238000004544 sputter deposition Methods 0.000 description 15
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- 230000000052 comparative effect Effects 0.000 description 8
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000007476 Maximum Likelihood Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000005303 antiferromagnetism Effects 0.000 description 4
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- 229910018536 Ni—P Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
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- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910018134 Al-Mg Inorganic materials 0.000 description 2
- 229910018467 Al—Mg Inorganic materials 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
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- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910019222 CoCrPt Inorganic materials 0.000 description 1
- 229910017082 Fe-Si Inorganic materials 0.000 description 1
- 229910017133 Fe—Si Inorganic materials 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/012—Recording on, or reproducing or erasing from, magnetic disks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/82—Disk carriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
Abstract
Description
试样编号 | 磁性材料 | 添加氧化物 | Pt/Co克分子比 | MOx/Co克分子比 | Hc(kPe) | Br×t(Gμm) | 标准化噪声(μVrms/μVpp) |
1112131415比较试样 | Co-48at%PtCo-48at%PtCo-48at%PtCo-48at%PtCo-48at%PtCo-15at%Cr-12at%Pt | 氧化硅氧化铝氧化钽氧化钇氧化钛氧化硅 | 0.920.920.920.920.920.16 | 1.051.011.071.011.031.05 | 3.082.832.722.682.922.05 | 879184838987 | 0.0130.0150.0160.0170.0140.021 |
试样编号 | 磁性材料 | 添加氮化物 | Pt/Co克分子比 | LNy/Co克分子比 | Hc(kPe) | Br×t(Gμm) | 标准化噪声(μVrms/μVpp) |
212223比较试样 | Co-48at%PtCo-48at%PtCo-48at%ptCo-15at%Cr-12at%Pt | 氮化硅氮化硼氧化铝氧化硅 | 0.920.920.920.16 | 1.031.011.051.01 | 2.912.862.721.86 | 86899187 | 0.0140.0150.0170.024 |
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP160521/95 | 1995-06-27 | ||
JP16052195A JP3448698B2 (ja) | 1995-06-27 | 1995-06-27 | 磁気記憶装置及び磁気記録媒体 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1146589A CN1146589A (zh) | 1997-04-02 |
CN1082219C true CN1082219C (zh) | 2002-04-03 |
Family
ID=15716762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN96110204A Expired - Fee Related CN1082219C (zh) | 1995-06-27 | 1996-06-27 | 磁存储器及磁存储器中使用的磁记录媒体 |
Country Status (6)
Country | Link |
---|---|
US (2) | US5919581A (zh) |
EP (1) | EP0751502B1 (zh) |
JP (1) | JP3448698B2 (zh) |
CN (1) | CN1082219C (zh) |
DE (1) | DE69636155T2 (zh) |
SG (1) | SG42420A1 (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3448698B2 (ja) * | 1995-06-27 | 2003-09-22 | 株式会社日立製作所 | 磁気記憶装置及び磁気記録媒体 |
JPH10275325A (ja) * | 1997-03-28 | 1998-10-13 | Fuji Photo Film Co Ltd | ディスク状磁気記録媒体 |
US6221508B1 (en) * | 1997-12-09 | 2001-04-24 | Hitachi, Ltd. | Magnetic recording media |
US6614749B2 (en) | 1999-05-21 | 2003-09-02 | Matsushita Electric Industrial Co., Ltd. | Recordable optical disk |
ATE333487T1 (de) * | 2000-02-07 | 2006-08-15 | Nagoya Oilchemical | Harzzusammensetzung, formmaterial und geformter gegenstand |
JP2002133645A (ja) * | 2000-10-20 | 2002-05-10 | Fuji Electric Co Ltd | 磁気記録媒体およびその製造方法 |
US6714387B1 (en) * | 2001-01-08 | 2004-03-30 | Headway Technologies, Inc. | Spin valve head with reduced element gap |
US6577477B1 (en) | 2001-02-01 | 2003-06-10 | Headway Technologies, Inc. | Hard magnetic bias configuration for GMR |
KR100800018B1 (ko) | 2001-07-11 | 2008-01-31 | 후지쯔 가부시끼가이샤 | 자기 기록 매체 및 그 제조 방법 |
US20030134151A1 (en) * | 2001-09-14 | 2003-07-17 | Fuji Photo Film Co., Ltd. | Magnetic recording medium |
JP3773104B2 (ja) * | 2001-12-11 | 2006-05-10 | 富士電機デバイステクノロジー株式会社 | 磁気記録媒体およびその製造方法 |
JP2003272122A (ja) | 2002-03-13 | 2003-09-26 | Fuji Photo Film Co Ltd | 磁気記録媒体 |
US7192664B1 (en) | 2003-06-24 | 2007-03-20 | Seagate Technology Llc | Magnetic alloy containing TiO2 for perpendicular magnetic recording application |
US20050095421A1 (en) * | 2003-11-03 | 2005-05-05 | Seagate Technology | Magnetic material for non-reactive process of granular perpendicular recording application |
US7482071B2 (en) * | 2005-05-24 | 2009-01-27 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording disk with improved recording layer having high oxygen content |
US7491452B2 (en) | 2005-08-12 | 2009-02-17 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording disk with recording layer containing selected metal oxides and formed on a reduced-thickness exchange-break layer |
DE102008041727B4 (de) * | 2008-09-01 | 2011-06-16 | Robert Bosch Gmbh | Vorrichtung und Verfahren zur Stabilisierung eines Lane Keeping Support Systems |
US8685547B2 (en) | 2009-02-19 | 2014-04-01 | Seagate Technology Llc | Magnetic recording media with enhanced writability and thermal stability |
US8653824B1 (en) * | 2009-12-16 | 2014-02-18 | Western Digital (Fremont), Llc | Delta temperature test method and system |
US8427775B2 (en) * | 2010-06-30 | 2013-04-23 | HGST Netherlands B.V. | Particle-capturing device including a component configured to provide an additional function within an enclosure exclusive of capturing particles |
US9142240B2 (en) | 2010-07-30 | 2015-09-22 | Seagate Technology Llc | Apparatus including a perpendicular magnetic recording layer having a convex magnetic anisotropy profile |
CN105723460A (zh) * | 2014-04-24 | 2016-06-29 | 富士电机株式会社 | 磁记录介质的制造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0538823A2 (en) * | 1991-10-22 | 1993-04-28 | Sony Corporation | Perpendicular magnetic recording and perpendicular magnetic reproducing apparatus |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4438066A (en) * | 1981-06-30 | 1984-03-20 | International Business Machines Corporation | Zero to low magnetostriction, high coercivity, polycrystalline, Co-Pt magnetic recording media |
US4663685A (en) * | 1985-08-15 | 1987-05-05 | International Business Machines | Magnetoresistive read transducer having patterned longitudinal bias |
US4988578A (en) * | 1986-03-10 | 1991-01-29 | Komag, Inc. | Method for manufacturing a thin film magnetic recording medium |
US5143794A (en) * | 1988-08-10 | 1992-09-01 | Hitachi, Ltd. | Magnetic recording media for longitudinal recording, process for producing the same and magnetic memory apparatus |
US4902583A (en) * | 1989-03-06 | 1990-02-20 | Brucker Charles F | Thick deposited cobalt platinum magnetic film and method of fabrication thereof |
DE4021970C2 (de) * | 1989-07-10 | 1993-12-16 | Toshiba Kawasaki Kk | Magnetischer Aufzeichnungsträger und Verfahren zu seiner Herstellung |
JPH03222113A (ja) * | 1990-01-25 | 1991-10-01 | Fuji Photo Film Co Ltd | 磁気記録媒体 |
JPH04356721A (ja) * | 1991-03-28 | 1992-12-10 | Fuji Photo Film Co Ltd | 磁気記録媒体 |
JPH087859B2 (ja) * | 1991-09-06 | 1996-01-29 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 磁気記録媒体及びその製造方法 |
JPH05197944A (ja) * | 1991-10-02 | 1993-08-06 | A G Technol Kk | 磁気記録媒体および製造方法 |
US5605733A (en) * | 1992-01-22 | 1997-02-25 | Hitachi, Ltd. | Magnetic recording medium, method for its production, and system for its use |
US5478661A (en) * | 1993-04-01 | 1995-12-26 | Ag Technology Co., Ltd. | Magnetic recording medium and method for its production |
US5631094A (en) * | 1994-01-28 | 1997-05-20 | Komag, Incorporated | Magnetic alloy for improved corrosion resistance and magnetic performance |
US5583727A (en) * | 1995-05-15 | 1996-12-10 | International Business Machines Corporation | Multiple data layer magnetic recording data storage system with digital magnetoresistive read sensor |
JP3448698B2 (ja) * | 1995-06-27 | 2003-09-22 | 株式会社日立製作所 | 磁気記憶装置及び磁気記録媒体 |
-
1995
- 1995-06-27 JP JP16052195A patent/JP3448698B2/ja not_active Expired - Fee Related
-
1996
- 1996-06-24 SG SG1996010132A patent/SG42420A1/en unknown
- 1996-06-25 US US08/670,121 patent/US5919581A/en not_active Expired - Lifetime
- 1996-06-26 EP EP96110302A patent/EP0751502B1/en not_active Expired - Lifetime
- 1996-06-26 DE DE69636155T patent/DE69636155T2/de not_active Expired - Fee Related
- 1996-06-27 CN CN96110204A patent/CN1082219C/zh not_active Expired - Fee Related
-
1999
- 1999-05-25 US US09/317,852 patent/US6177208B1/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0538823A2 (en) * | 1991-10-22 | 1993-04-28 | Sony Corporation | Perpendicular magnetic recording and perpendicular magnetic reproducing apparatus |
Also Published As
Publication number | Publication date |
---|---|
EP0751502B1 (en) | 2006-05-24 |
DE69636155D1 (de) | 2006-06-29 |
EP0751502A2 (en) | 1997-01-02 |
SG42420A1 (en) | 1997-08-15 |
JP3448698B2 (ja) | 2003-09-22 |
CN1146589A (zh) | 1997-04-02 |
US5919581A (en) | 1999-07-06 |
DE69636155T2 (de) | 2007-06-06 |
US6177208B1 (en) | 2001-01-23 |
EP0751502A3 (en) | 1997-01-08 |
JPH0916935A (ja) | 1997-01-17 |
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