CN1103203A - 电子器件的同时批量封接和电连接 - Google Patents
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Abstract
本发明提供一种电子器件,特别是表面声波器件
的封接和电气测量的新的有效的方法。按照本发明,
由于在晶片范围使用同时批量封接和电连接以及使
用带气密封接和导电通孔的基片,制造电子器件的气
密封接组件和电气测量每个器件的成本和尺寸与现
有技术相比都大大减少。还由于在切割之前用晶片
探极测试技术最后进行电气测量,也使成本降低。
Description
本发明涉及电子器件的同时批量封接和电连接。本发明特别涉及一种制造相对便宜的表面声波器件的气密封接组件的新的和经济有效的方法。
许多电子器件是十分敏感,并且需要避免粗糙,包括在其周围存在的各种有潜在破坏性的沾染物。已证明对密封组件提供这样的防护是非常有效的方法。密封组件的封接是一种气密封接。已知的密封组件由金属、玻璃或陶瓷构成,密封方法例如是焊接或封接。在只提供一定程度的防护而不要求与周围完全隔离时也使用非密封组件。已知的非密封组件应用塑封、模制、浇注或聚合物封接。以往要求在使用密封组件以高成本提供最大程度防护和使用非密封组件以低成本提供较小程度防护之间进行折衷选择。通过下面对制造这样结构的现有方法的典型说明,密封组件的成本高就将是很明显的了。
通常,先要有被封接的各电子器件。然后,将这些电子器件安装在适用于气密封接的组件内,所说的典型组件如上所述,是由金属以及玻璃或陶瓷构成。接着在位于组件内的电接线端子和电器件本身的接线端子之间设置导线或带状线束。这样联线能使每个电子器件都与组件外界相联系。随后,用金属焊接工艺,例如凸焊接或缝捍接封接组件。最后,测试每个组件和部件以确定其电特性。由于在生产期间要执行各种工艺步骤,每个步骤的成品率不会都是百分之百,所以这样的测试是必须的。这些气密封接和电测试步骤通常都是每个电子器件分别进行(即逐个进行)。
对各电子器件进行这些工作的劳动成本与装配成本一起构成的组合成本往往超过电子器件自身的成本。这问题已存在很久,因此要考虑用低成本的方法气密封接与外部环境隔离的电子器件,而且也要求有经济有效的方法对它们进行电气测试。此外,由于组装的复杂性,这样的工作导致器件尺寸不希望的增大。
电子器件的一个实例是表面声波(SAW)器件,所说的电子器件由于它的敏感特性,最好用气密封装并且通常用上述方法封装。SAW器件在技术上是公知的,在许多不同的应用中是非常有用的,包括工作在几十兆赫到超过1千兆赫的频率范围的高度精确和稳定的带通滤波器和振荡器。
环境污染能使SAW器件严重失灵,为达到其予期目的常要无效地重复动作。例如SAW器件的污染能改变声波传播速度,并且通过SAW基片时衰减增加。对SAW器件来说,速度的任何改变都将导致频率漂移,衰减的增加导致插入损耗增加。因此,已按常规对每个SAW器件应用气密封装以保证每个器件的表面不受污染,该污染能反射或者相反,能干涉所传播的表面声波的能量。
如上所述,已知的气密封装电子器件(例如SAW器件)的方法已证明是昂贵的并常使所生产的单元的尺寸不希望地增大。
本发明的首要目的是提供一种电子器件的,特别是表面声波器件的封接和电气测试的新的有效的方法。
本发明的另一目的是提供一种即能为电子器件生产气密组件又能生产非气密组件的低成本的方法,无论哪种组件都是各个实例所需要的。
本发明的又一目的是提供一种生产表面安装兼容的小型器件的方法。
本发明提供的这种批量封接和测试电子器件的方法,包括如下步骤:
(a)首先对准支承在衬片上的多个电子器件的上方,其内有多个导电元件的晶片盖;
(b)有如下两步:
(Ⅰ)通过焊接紧贴衬片的已调准的晶片盖来封接每个电子器件;和
(Ⅱ)使在晶片盖中的导电元件和支承在衬片上的电子器件之间形成电联系;和
(c)最后测试多个已封接的电子器件。
任选的焊料涂层可在测试步骤之前设置在晶片盖的外侧,以便在下一步组装工序期间使已完工的组件随后固定焊料将是方便和容易的。
本发明也提供一种按照上述方法形成的用于表面声波器件的表面安装兼容的气密封接组件。
本发明还提供一晶片级组件,它包括衬片和多个电子器件。此电子器件用衬片支承。一晶片盖在电子器件上方对准衬片焊接。格栅焊接材料层(单独,或者与一个或多个附加层,例如阻挡材料层一起)以一定方式在衬片和/或晶片盖上构图并使由衬片支承的每个电子器件与由衬片支承的其余电子器件隔离。焊接材料和晶片盖实质上在晶片范围帮助形成每个电子器件的封接。在晶片盖中提供许多导电元件。导电元件在晶片范围与电子器件电连通。
图1是按照本发明实施例构成的,在已封接的组件中的电子器件的侧截面图。
图2是在固定到基片盖上之前从器件基片底看的视图。
图3是在固定到器件基片上之前从基片盖顶部看的视图。
图4(A)~图4(D)示出按本发明方法的实施例的工艺步骤的顺序,这些步骤对廉价地生产在封接组件中的相对小的电子器件都是有效的。
图5示出用图4(A)~图4(D)所示的方法生产的封接组件中的多个相对小的电子器件。
图6是在将这两个基片用本发明所教导的方法在其上按一定图形用焊料焊接到一起之前,与器件基片对准的基片盖的侧截面图。
按照本发明,由于在晶片范围上使用同时批量封接和电连接,并且使用带有气密封接的导电的通孔的基片,从而使制造电子器件气密封接组件的成本和尺寸以及电气测试每个器件的成本都比现有技术大大降低。而且还由于在切割之前使用晶片探极测试技术进行最后的电测试也使成本降低。
下面将首先参照图1、2、3对本发明进行详细地讨论。图1示出按照本发明的实施例构成的在已封接的组件中的电子器件。图2是在它固定到基片盖上之前从器件基片底部看的视图。图3是在固定到器件基片上之前从基片盖顶部看的视图。
如图所示,按照本发明的方法制成的含有电子器件的气密封接组件包括一支承电子器件13的器件衬片11。此器件衬片11可以相应地由石英构成,电子器件13可以是表面声波(SAW)器件。此器件衬片11被能提供密封封接的衬片盖15覆盖。用以形成这样的衬片盖15的适当的材料是某种陶瓷材料(一种特别适合的材料是某种FOTOCERAM(Trademark of Corning Glass))。上述这些材料用于本发明的组件是特别好的,但也可以用其他适合的材料代替。
应指出,在制造本发明的组件时也可应用聚合物材料(例如包括衬片)。不适于进行气密封接的聚合物,由于它们通常是很便宜的,所以是很有吸引力的。虽然聚合物材料不能完成气密封接组件,但聚合物仍然能很好地防止某些粒子的污染。因此,在不要求气密封接的场合应用聚合物材料是更可取的。
器件衬片11借助格栅焊料片17焊接到衬片盖15上。此焊料片17粘接到器件衬片11和衬片盖15这两者上面,分别如图2和3所示。焊料片17除将两衬片11和15焊接到一起之外,还用以使衬片盖15的表面与其上设置有电子器件13的器件衬片11的表面保持一点间隔如图1所示。在基片和焊料之间的一层间隔材料也能用以建立这样的间隔(即控制衬片之间的距离)。此间隔材料可由任何适合的材料构成。在间隔物仅用于间隔目的的情况下,对其无任何其它特殊性能的要求,所用材料的选择可以是相当广泛的。在其它情况下要求有一隔离层作为阻挡层,因此如图1所示,可应用隔离/阻挡层18。任何已知的用以形成阻挡层的材料在本发明中均可应用。例如钨或镍可用以形成阻挡层。应指出可应用一个以上的隔离体/阻挡层。由图1和以下的说明可见,应考虑到可在任何一个衬片上形成多层,在此未特别描述的附加层可以在要求利用任何公知的合适材料时被应用,所说的合适的材料能满意地实现所希望的目的。
导电通路(也称之为导电通孔)19贯通衬片盖15延伸。与导电通路19有关的焊料端21焊接到电子器件13的焊料端(也称之为焊盘)23。这样的电子器件13对导电通路19的电的相互连接是所希望的,因此电子器件能借助外部的电接线端25与组件外部电连通,所说的组件一旦完成封接后就由二个衬片和焊料区所界定。为了提供一种气密封接器件,建立密封的导电孔19。此已装配的器件如图1所示,适于在平面安装工艺中通过将其放置在这样的带下边盖的板上固定到电路板上。
显然,隔离体/阻挡层18在防止通路19的元素(例如镓或汞)进入部件的其他地方是有用的。
重要的是本发明提供一种生产图1~图3所示的封接电子器件的高效而实用的方法。现在将参照图4~图6讨论本发明所设想的方法。
如图4(A)所示,先使衬片盖15与器件衬片11对准。(为避免任何混乱,这时应注意参考数字11和15在此被用作在切割成各个单元之前(即仍然为晶片范围时)和在切割生产成各个单独的组件之后这两种衬片的参考符号,如图1~3所示)。两种衬片11和15的每一种其直径典型的均为3英寸(然而应明白,它们可以更小或更大)。此器件衬片11支承多个SAW变换器31(或其它适用的所要求的电子器件)。衬片盖15中有许多气密导电通路19,以一定方式排列以便与器件衬片11中的每个SAW器件31相应。对准此衬片以使SAW器件31的每个接点都与导电通路19(见图4(A))或与通路连接的焊盘对准。
然后用适当方法将衬片盖15焊接到器件衬片11上,如图4(B)所示。焊接区最好形成在予先设置在器件衬片11上环绕SAW器件的格栅金焊料片33和同样予先设置在衬片盖15上环绕通路接点19的同样构图成的格栅铟焊料片35之间。此焊接区最好是形成金和铟的固-液相互扩散(SLID)焊接区。下面将对焊接进行详细说明。借助这样的焊接可实现SAW器件31的气密封接。
如上所述,与焊接步骤同时使器件衬片11中的SAW器件31和衬片盖15中的相近导电通路19形成电连接。如图4(C)所示,然后从盖侧边,借助常规的自动衬片探测台41对所得到的“分层结构”的衬片测试所要求的电特性。要注意,这样的测试是对晶片范围(即在晶片被切割成单独组件之前)进行。
参看图4(D),随后使用常规的基片切割锯(未示出)切割衬片11和15。经气密封接,电测试和切割成包括SAW器件的密封组件45后即已完工并准备发运,如图5所示。每个直径为3英寸的衬片对11和15,都能提供几百个器件。
任选的焊料涂层(板或波焊)可以在测试步骤之前形成在衬片盖的外侧,以使所完工的组件在随后下一步组装程序期间的焊料固定工作将是方便容易的。提供焊料涂层避免组件使用者随后在下一个这样的装配工序中需要应用此单元时还必须为每个单元提供焊料。要知道与在晶片上涂复每个所加工成的单个单元相反,提供这样的焊料涂层是非常简单的。相应地将焊料层或板设置在外接线端25的外侧面上。
对上述工艺来说,为衬片盖15选择具有与器件衬片11的热膨胀特性密封配合的热膨胀特性的非导电材料是很重要的。例如一种用标准工具切割石英晶片的SAW谐振器在X轴有每摄氏度百万分之十三点七(13.7×10-6/℃)的线性热膨胀系数,在垂直于X轴方向热膨胀系数为每摄氏度百万分之十点二(10.2×10-6)/℃)。某些类型的热膨胀系数为每摄氏度百万分之十二(12×10-6/℃)的玻璃-陶瓷产品与用标准工具切割的石英晶片能很好地匹配。例如,FOTOCERAM(Trademark of Corning Glass)是一种这样适用的产品。
此外,在必须生产气密封接组件时,保证衬片盖15中有气密封接导电通路19以使组件中的电子器件13与外部电连接是重要的。
对上述工艺来说,在相对低的温度下将两个衬片11和15焊接到一起是重要的,这能使冷却造成的和由于它们之间热膨胀特性失配造成的潜在热应力保持最小值。产生高熔点的焊接也是重要的,这将使一旦形成焊接点在随后的组装工艺(例如在印刷电路板上的随后表面安装工艺)过程中就不会熔化。
为实现这些目标,考虑用本发明在一个衬片上构图成的金格栅和在该二个衬片中另一个上构图成的铟格栅之间来完成焊接。图6是在用其上构图成的这样焊料格栅将两衬片焊接到一起之前与石英器件衬片对准的陶瓷衬片盖的侧截面图。为便于加工,最好将金格栅形成在支承电子器件的衬片上,而铟格栅最好构图在衬片盖上。当将两衬片11和15在干燥气体(如氢或氮)中或真空中放在一起并加热时,铟在155℃下熔解并开始与金熔合。当金的浓度足够高时,熔解经过相变并成为固态。(应注意L.Bernstein 在电化学学会杂志(1966年12月) VOI.113 NO.12 P1282~1288发表的“Semiconductor Joining by The Solid-Liguid-Interdiffusion(SLID)Process:1.The Systems Ag-In,Au-In and Cu-In”)。在这种固态物被退火后,并具有适当的金和铟比率(例如含按重量计30~40%的铟),则焊接在低于400℃不会熔化。这样的焊接熔化温度显然比常规的低于250℃的印刷电路板焊接温度高。
应注意,本发明的思想也能延伸到不需气密封接的电子器件。这时,加工更容易,耗费的材料更少,例如能应用非气密通路,聚合材料能用于衬片。还应注意,能应用本发明取代现有的电子组装方法。
上述说明应理解为主要是用来说明典型的实例,特别是提供由本发明所完成的优选实施例,不应用此限定本发明。所做的各种相应的变化和改进均未超出本发明的精神和范围,而由所附的权利要求来限定。
Claims (22)
1、一种批量封接和测试电子器件的方法包括如下步骤:
(a)首先将在支承在衬片上的多个电子器件上方的,其内有多个导电元件的晶片盖对准;
(b)接着为:
(Ⅰ)借助焊接紧贴衬片的已对准的晶片盖来封接每个电子器件;和
(Ⅱ)使在晶片盖内导电元件和支承在衬片上的电子器件之间形成电联系;和
(c)最后测试已封接的多个电子器件。
2、按照权利要求1所说的方法,其特征在于步骤(C)之后还包括将已焊接的晶片切割成许多含有已测试的电子器件的封接组件。
3、按照权利要求2所说的方法,其特征在于其中的步骤(b)(Ⅰ)和(b)(Ⅱ)实质上在晶片范围同时进行。
4、按照权利要求3所说的方法,其特征在于所说的步骤(C)包括晶片探极电测试工艺。
5、按照权利要求3所说的方法,其特征在于所说的晶片盖由其热膨胀特性类似衬片的热膨胀特性的不导电材料制成。
6、按照权利要求5所说的方法,其特征在于所说的衬片是石英,晶片盖是玻璃-陶瓷。
7、按照权利要求5所说的方法,其特征在于所说的封接步骤(b)(Ⅰ)导致在每个电子器件周围形成气密封接。
8、按照权利要求7所说的方法,其特征在于所说的晶片盖中的多个导电元件包括用以使电子器件与外部电接线端连接的气密封接导电通路。
9、按照权利要求3所说的方法,其特征在于所说的封接步骤(b)(Ⅰ)是在相对低温下实现,在该步骤期间晶片盖通过在每个电子器件周围构图成的格栅焊料片焊接到衬片上,所说的格栅构图是在封接步骤(b)(Ⅰ)之前进行,所说的相对低温是低于200℃。
10、按照权利要求9所说的方法,其特征在于所说的格栅焊料在衬片和晶片盖之间保持间隔。
11、按照权利要求9所说的方法,其特征在于所说的封接步骤(b)(Ⅰ)导致形成气密的因-液相互扩散的焊区。
12、按照权利要求11所说的方法,其特征在于所说的气密的固-液相互扩散焊区形成在在一个衬片上构图的金格栅和在该两衬片中另一个上构图的铟格栅之间,所说的格栅构图是在封接步骤(b)(Ⅰ)之前进行。
13、按照权利要求9所说的方法,其特征在于所说的切割步骤包括沿格栅焊料片的中心线向下切割已焊接和测试的晶片。
14、按照权利要求13所说的方法,其特征在于所说的通过封接步骤(b)(Ⅰ)所完成的封接是气密封接。
15、按照权利要求14所说的方法,其特征在于所说的电子器件是表面声波器件。
16、一种按权利要求15的工艺加工成的,用于表面声波器件的相当小的表面安装兼容的气密封接组件。
17、一种晶片级组件包括:衬片和多个电子器件,其中所说的电子器件由所说的衬片支承,晶片盖在所说的电子器件上方贴紧所说的衬片焊接;格栅焊接材料至少以一定方式构图在一个所说的衬片上,并使由所说衬片支承的每个电子器件与由其支承的其余所说的电子器件隔离,其中所说的焊接材料和所说的晶片盖实质上在晶片范围帮助每个所说的电子器件形成封接,在所说的晶片盖中有多个导电元件,其中所说的导电元件在晶片范围与所说的电子器件电连通。
18、按照权利要求17所说的晶片级组件,其特征在于每个所说的衬片和所说的晶片盖至少一英寸宽。
19、按照权利要求17所说的晶片级组件,其特征在于所说的封接是气密封接,所说的晶片盖是由其热膨胀特性与衬片的热膨胀特性类似的不导电材料构成,在晶片盖中多个导电元件包括气密封接的导电通路。
20、按照权利要求19所说的晶片级组件,其特征在于所说的电子器件是表面声波器件。
21、按照权利要求3所说的方法,其特征在于在步骤(C)之前还包括在随后的焊料固定工序所用的在所说的一个衬片的外侧上形成焊料层的工序。
22、按照权利要求10所说的方法,其特征在于还包括多层格栅,其中所说的焊料片至少由一层所说的格栅组成,其中所说的多层格栅还包括阻挡层,所说的阻挡层至少部分地帮助在衬片和晶片盖之间维持一间距。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US009,530 | 1993-01-27 | ||
US08/009,530 US5448014A (en) | 1993-01-27 | 1993-01-27 | Mass simultaneous sealing and electrical connection of electronic devices |
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CN1103203A true CN1103203A (zh) | 1995-05-31 |
CN1040385C CN1040385C (zh) | 1998-10-21 |
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CN94102667A Expired - Fee Related CN1040385C (zh) | 1993-01-27 | 1994-01-27 | 电子器件的同时批量封接和电连接 |
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US (1) | US5448014A (zh) |
EP (1) | EP0609062B1 (zh) |
JP (1) | JP2820609B2 (zh) |
KR (1) | KR100299415B1 (zh) |
CN (1) | CN1040385C (zh) |
DE (1) | DE69417781T2 (zh) |
SG (1) | SG74536A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7679153B2 (en) | 2004-09-13 | 2010-03-16 | Seiko Epson Corporation | Sealed surface acoustic wave element package |
CN102782839A (zh) * | 2010-02-16 | 2012-11-14 | 意法半导体股份有限公司 | 用于硅通孔(tsv)的电测试的系统和方法 |
CN106531723A (zh) * | 2016-11-28 | 2017-03-22 | 西安科锐盛创新科技有限公司 | 裸芯片测试结构的制备方法 |
CN109632121A (zh) * | 2018-12-10 | 2019-04-16 | 上海交通大学 | 一种基于导电通孔的温度传感器封装结构及制备方法 |
Families Citing this family (166)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6388203B1 (en) | 1995-04-04 | 2002-05-14 | Unitive International Limited | Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby |
WO1996031905A1 (en) | 1995-04-05 | 1996-10-10 | Mcnc | A solder bump structure for a microelectronic substrate |
US6027957A (en) * | 1996-06-27 | 2000-02-22 | University Of Maryland | Controlled solder interdiffusion for high power semiconductor laser diode die bonding |
US6096155A (en) * | 1996-09-27 | 2000-08-01 | Digital Optics Corporation | Method of dicing wafer level integrated multiple optical elements |
US20080136955A1 (en) * | 1996-09-27 | 2008-06-12 | Tessera North America. | Integrated camera and associated methods |
US8153957B2 (en) * | 1996-09-27 | 2012-04-10 | Digitaloptics Corporation East | Integrated optical imaging systems including an interior space between opposing substrates and associated methods |
US6119920A (en) * | 1996-12-20 | 2000-09-19 | Rf Monolithics, Inc. | Method of forming an electronic package with a solder seal |
EP0899787A3 (en) * | 1997-07-25 | 2001-05-16 | Mcnc | Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structurs formed thereby |
DE69829927T2 (de) | 1997-09-11 | 2006-02-09 | Honeywell Inc., Minneapolis | Feststoff-Flüssigkeits-Interdiffusionsverbindung für Ringlaserkreisel |
GB9818474D0 (en) * | 1998-08-26 | 1998-10-21 | Hughes John E | Multi-layer interconnect package for optical devices & standard semiconductor chips |
JP3303791B2 (ja) | 1998-09-02 | 2002-07-22 | 株式会社村田製作所 | 電子部品の製造方法 |
US7208725B2 (en) | 1998-11-25 | 2007-04-24 | Rohm And Haas Electronic Materials Llc | Optoelectronic component with encapsulant |
FR2791811B1 (fr) * | 1999-03-31 | 2002-06-14 | Sofradir | Composant electrique ou electronique encapsule de maniere etanche |
US6182342B1 (en) | 1999-04-02 | 2001-02-06 | Andersen Laboratories, Inc. | Method of encapsulating a saw device |
JP4420538B2 (ja) * | 1999-07-23 | 2010-02-24 | アバゴ・テクノロジーズ・ワイヤレス・アイピー(シンガポール)プライベート・リミテッド | ウェーハパッケージの製造方法 |
US6228675B1 (en) * | 1999-07-23 | 2001-05-08 | Agilent Technologies, Inc. | Microcap wafer-level package with vias |
US6265246B1 (en) * | 1999-07-23 | 2001-07-24 | Agilent Technologies, Inc. | Microcap wafer-level package |
US6287894B1 (en) | 1999-10-04 | 2001-09-11 | Andersen Laboratories, Inc. | Acoustic device packaged at wafer level |
US6357818B1 (en) * | 1999-12-03 | 2002-03-19 | East Manufacturing | Trailer wiring retention and protection system |
IL133453A0 (en) * | 1999-12-10 | 2001-04-30 | Shellcase Ltd | Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby |
US6590283B1 (en) * | 2000-02-28 | 2003-07-08 | Agere Systems Inc. | Method for hermetic leadless device interconnect using a submount |
GB0016861D0 (en) * | 2000-07-11 | 2000-08-30 | Univ Cranfield | Improvements in or relating to filters |
US7345316B2 (en) * | 2000-10-25 | 2008-03-18 | Shipley Company, L.L.C. | Wafer level packaging for optoelectronic devices |
JP2002131764A (ja) * | 2000-10-30 | 2002-05-09 | Nec Eng Ltd | 液晶表示素子セルの封孔方法及び封孔装置 |
US6932519B2 (en) | 2000-11-16 | 2005-08-23 | Shipley Company, L.L.C. | Optical device package |
US6827503B2 (en) * | 2000-12-01 | 2004-12-07 | Shipley Company, L.L.C. | Optical device package having a configured frame |
US6883977B2 (en) | 2000-12-14 | 2005-04-26 | Shipley Company, L.L.C. | Optical device package for flip-chip mounting |
EP1360762A1 (en) | 2001-01-18 | 2003-11-12 | Infineon Technologies AG | Filter devices and method for fabricating filter devices |
KR100396551B1 (ko) * | 2001-02-03 | 2003-09-03 | 삼성전자주식회사 | 웨이퍼 레벨 허메틱 실링 방법 |
US6890834B2 (en) * | 2001-06-11 | 2005-05-10 | Matsushita Electric Industrial Co., Ltd. | Electronic device and method for manufacturing the same |
US7078671B1 (en) | 2001-08-06 | 2006-07-18 | Shipley Company, L.L.C. | Silicon optical microbench devices and wafer-level testing thereof |
US6856007B2 (en) | 2001-08-28 | 2005-02-15 | Tessera, Inc. | High-frequency chip packages |
KR100442830B1 (ko) | 2001-12-04 | 2004-08-02 | 삼성전자주식회사 | 저온의 산화방지 허메틱 실링 방법 |
US7098072B2 (en) * | 2002-03-01 | 2006-08-29 | Agng, Llc | Fluxless assembly of chip size semiconductor packages |
US7547623B2 (en) | 2002-06-25 | 2009-06-16 | Unitive International Limited | Methods of forming lead free solder bumps |
US6960828B2 (en) | 2002-06-25 | 2005-11-01 | Unitive International Limited | Electronic structures including conductive shunt layers |
JP2004129223A (ja) * | 2002-07-31 | 2004-04-22 | Murata Mfg Co Ltd | 圧電部品およびその製造方法 |
SG111972A1 (en) * | 2002-10-17 | 2005-06-29 | Agency Science Tech & Res | Wafer-level package for micro-electro-mechanical systems |
JP3905041B2 (ja) * | 2003-01-07 | 2007-04-18 | 株式会社日立製作所 | 電子デバイスおよびその製造方法 |
US6956291B1 (en) * | 2003-01-16 | 2005-10-18 | National Semiconductor Corporation | Apparatus and method for forming solder seals for semiconductor flip chip packages |
US7275292B2 (en) | 2003-03-07 | 2007-10-02 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method for fabricating an acoustical resonator on a substrate |
AU2003901146A0 (en) * | 2003-03-12 | 2003-03-27 | Cochlear Limited | Feedthrough assembly |
US6812558B2 (en) * | 2003-03-26 | 2004-11-02 | Northrop Grumman Corporation | Wafer scale package and method of assembly |
JP2004304622A (ja) * | 2003-03-31 | 2004-10-28 | Fujitsu Media Device Kk | 弾性表面波デバイス及びその製造方法 |
JP3913700B2 (ja) * | 2003-04-08 | 2007-05-09 | 富士通メディアデバイス株式会社 | 弾性表面波デバイス及びその製造方法 |
US20060124915A1 (en) * | 2003-05-19 | 2006-06-15 | Siegfried Buettner | Production of an optoelectronic component that is enclosed in plastic, and corresponding methods |
US6972480B2 (en) | 2003-06-16 | 2005-12-06 | Shellcase Ltd. | Methods and apparatus for packaging integrated circuit devices |
WO2005004195A2 (en) | 2003-07-03 | 2005-01-13 | Shellcase Ltd. | Method and apparatus for packaging integrated circuit devices |
US20070110361A1 (en) * | 2003-08-26 | 2007-05-17 | Digital Optics Corporation | Wafer level integration of multiple optical elements |
EP1515364B1 (en) * | 2003-09-15 | 2016-04-13 | Nuvotronics, LLC | Device package and methods for the fabrication and testing thereof |
WO2005031862A1 (en) | 2003-09-26 | 2005-04-07 | Tessera, Inc. | Structure and method of making sealed capped chips |
KR100541087B1 (ko) | 2003-10-01 | 2006-01-10 | 삼성전기주식회사 | 마이크로 디바이스를 위한 웨이퍼 레벨 패키지 및 제조방법 |
US7049216B2 (en) | 2003-10-14 | 2006-05-23 | Unitive International Limited | Methods of providing solder structures for out plane connections |
US20050116344A1 (en) * | 2003-10-29 | 2005-06-02 | Tessera, Inc. | Microelectronic element having trace formed after bond layer |
US7391285B2 (en) | 2003-10-30 | 2008-06-24 | Avago Technologies Wireless Ip Pte Ltd | Film acoustically-coupled transformer |
US7332985B2 (en) | 2003-10-30 | 2008-02-19 | Avago Technologies Wireless Ip (Singapore) Pte Ltd. | Cavity-less film bulk acoustic resonator (FBAR) devices |
US7019605B2 (en) | 2003-10-30 | 2006-03-28 | Larson Iii John D | Stacked bulk acoustic resonator band-pass filter with controllable pass bandwidth |
US6946928B2 (en) | 2003-10-30 | 2005-09-20 | Agilent Technologies, Inc. | Thin-film acoustically-coupled transformer |
EP1528677B1 (en) | 2003-10-30 | 2006-05-10 | Agilent Technologies, Inc. | Film acoustically-coupled transformer with two reverse c-axis piezoelectric elements |
JP2005167969A (ja) * | 2003-11-14 | 2005-06-23 | Fujitsu Media Device Kk | 弾性波素子および弾性波素子の製造方法 |
US20050189622A1 (en) * | 2004-03-01 | 2005-09-01 | Tessera, Inc. | Packaged acoustic and electromagnetic transducer chips |
JP4576849B2 (ja) * | 2004-03-01 | 2010-11-10 | パナソニック株式会社 | 集積回路装置 |
US7615833B2 (en) | 2004-07-13 | 2009-11-10 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator package and method of fabricating same |
CN100525097C (zh) * | 2004-09-13 | 2009-08-05 | 精工爱普生株式会社 | 电子零件和电子零件的制造方法 |
US7388454B2 (en) | 2004-10-01 | 2008-06-17 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using alternating frame structure |
US8981876B2 (en) | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
US7202560B2 (en) * | 2004-12-15 | 2007-04-10 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Wafer bonding of micro-electro mechanical systems to active circuitry |
US20060125084A1 (en) * | 2004-12-15 | 2006-06-15 | Fazzio Ronald S | Integration of micro-electro mechanical systems and active circuitry |
US7791434B2 (en) | 2004-12-22 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric |
JP4057017B2 (ja) * | 2005-01-31 | 2008-03-05 | 富士通株式会社 | 電子装置及びその製造方法 |
US20060183270A1 (en) * | 2005-02-14 | 2006-08-17 | Tessera, Inc. | Tools and methods for forming conductive bumps on microelectronic elements |
US7427819B2 (en) | 2005-03-04 | 2008-09-23 | Avago Wireless Ip Pte Ltd | Film-bulk acoustic wave resonator with motion plate and method |
US20060211233A1 (en) * | 2005-03-21 | 2006-09-21 | Skyworks Solutions, Inc. | Method for fabricating a wafer level package having through wafer vias for external package connectivity and related structure |
US8143095B2 (en) | 2005-03-22 | 2012-03-27 | Tessera, Inc. | Sequential fabrication of vertical conductive interconnects in capped chips |
US7576426B2 (en) * | 2005-04-01 | 2009-08-18 | Skyworks Solutions, Inc. | Wafer level package including a device wafer integrated with a passive component |
US7369013B2 (en) | 2005-04-06 | 2008-05-06 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using filled recessed region |
US7436269B2 (en) | 2005-04-18 | 2008-10-14 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustically coupled resonators and method of making the same |
US7067397B1 (en) | 2005-06-23 | 2006-06-27 | Northrop Gruman Corp. | Method of fabricating high yield wafer level packages integrating MMIC and MEMS components |
JP2007013017A (ja) * | 2005-07-04 | 2007-01-18 | Sony Corp | 電子デバイス装置およびその製造方法 |
CN100546180C (zh) * | 2005-08-24 | 2009-09-30 | 京瓷株式会社 | 表面声波装置及其制造方法 |
US7569926B2 (en) * | 2005-08-26 | 2009-08-04 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy with raised feature |
FR2890067B1 (fr) * | 2005-08-30 | 2007-09-21 | Commissariat Energie Atomique | Procede de scellement ou de soudure de deux elements entre eux |
JP4923486B2 (ja) * | 2005-09-01 | 2012-04-25 | 大日本印刷株式会社 | 電子デバイス、電子デバイスの製造方法 |
US7868522B2 (en) | 2005-09-09 | 2011-01-11 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Adjusted frequency temperature coefficient resonator |
US7391286B2 (en) | 2005-10-06 | 2008-06-24 | Avago Wireless Ip Pte Ltd | Impedance matching and parasitic capacitor resonance of FBAR resonators and coupled filters |
US7423503B2 (en) | 2005-10-18 | 2008-09-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating film acoustically-coupled transformer |
US7525398B2 (en) | 2005-10-18 | 2009-04-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustically communicating data signals across an electrical isolation barrier |
US7737807B2 (en) | 2005-10-18 | 2010-06-15 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators |
US7675390B2 (en) | 2005-10-18 | 2010-03-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator |
US7425787B2 (en) * | 2005-10-18 | 2008-09-16 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating single insulated decoupled stacked bulk acoustic resonator with acoustically-resonant electrical insulator |
KR100653089B1 (ko) * | 2005-10-31 | 2006-12-04 | 삼성전자주식회사 | 탄성 표면파 디바이스 웨이퍼 레벨 패키지 및 그 패키징방법 |
US7463499B2 (en) | 2005-10-31 | 2008-12-09 | Avago Technologies General Ip (Singapore) Pte Ltd. | AC-DC power converter |
FI119729B (fi) * | 2005-11-23 | 2009-02-27 | Vti Technologies Oy | Menetelmä mikroelektromekaanisen komponentin valmistamiseksi ja mikroelektromekaaninen komponentti |
TWI310366B (en) * | 2005-11-25 | 2009-06-01 | Panasonic Elec Works Co Ltd | Wafer-level package structure, and sensor device obtained from the same |
EP1953817B1 (en) * | 2005-11-25 | 2012-10-31 | Panasonic Corporation | Sensor device and method for manufacturing same |
TW200735290A (en) * | 2005-11-25 | 2007-09-16 | Matsushita Electric Works Ltd | Sensor device and manufacturing method thereof |
US8080869B2 (en) * | 2005-11-25 | 2011-12-20 | Panasonic Electric Works Co., Ltd. | Wafer level package structure and production method therefor |
US7561009B2 (en) | 2005-11-30 | 2009-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator (FBAR) devices with temperature compensation |
US20070138644A1 (en) * | 2005-12-15 | 2007-06-21 | Tessera, Inc. | Structure and method of making capped chip having discrete article assembled into vertical interconnect |
US20070164633A1 (en) * | 2006-01-13 | 2007-07-19 | Honeywell International Inc. | Quartz SAW sensor based on direct quartz bonding |
KR101177885B1 (ko) * | 2006-01-16 | 2012-08-28 | 삼성전자주식회사 | 웨이퍼 레벨 패키징 캡 및 그 제조방법 |
US7936062B2 (en) | 2006-01-23 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer level chip packaging |
US20070190747A1 (en) * | 2006-01-23 | 2007-08-16 | Tessera Technologies Hungary Kft. | Wafer level packaging to lidded chips |
US7612636B2 (en) | 2006-01-30 | 2009-11-03 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Impedance transforming bulk acoustic wave baluns |
US7674701B2 (en) | 2006-02-08 | 2010-03-09 | Amkor Technology, Inc. | Methods of forming metal layers using multi-layer lift-off patterns |
US7932615B2 (en) | 2006-02-08 | 2011-04-26 | Amkor Technology, Inc. | Electronic devices including solder bumps on compliant dielectric layers |
US20070188054A1 (en) * | 2006-02-13 | 2007-08-16 | Honeywell International Inc. | Surface acoustic wave packages and methods of forming same |
US7746677B2 (en) | 2006-03-09 | 2010-06-29 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | AC-DC converter circuit and power supply |
US7479685B2 (en) | 2006-03-10 | 2009-01-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Electronic device on substrate with cavity and mitigated parasitic leakage path |
JP2007281920A (ja) * | 2006-04-07 | 2007-10-25 | Murata Mfg Co Ltd | 電子部品およびその製造方法 |
US7629865B2 (en) | 2006-05-31 | 2009-12-08 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters |
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US7508286B2 (en) | 2006-09-28 | 2009-03-24 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | HBAR oscillator and method of manufacture |
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US20080217708A1 (en) * | 2007-03-09 | 2008-09-11 | Skyworks Solutions, Inc. | Integrated passive cap in a system-in-package |
KR100872265B1 (ko) * | 2007-05-16 | 2008-12-05 | 삼성전기주식회사 | 웨이퍼 레벨 패키지 및 그 패키징 방법 |
KR100826394B1 (ko) * | 2007-05-17 | 2008-05-02 | 삼성전기주식회사 | 반도체 패키지 제조방법 |
KR100951284B1 (ko) * | 2007-06-01 | 2010-04-02 | 삼성전기주식회사 | 웨이퍼 레벨 패키지 제조방법 |
US7791435B2 (en) | 2007-09-28 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Single stack coupled resonators having differential output |
US8324728B2 (en) | 2007-11-30 | 2012-12-04 | Skyworks Solutions, Inc. | Wafer level packaging using flip chip mounting |
DE102007058951B4 (de) | 2007-12-07 | 2020-03-26 | Snaptrack, Inc. | MEMS Package |
DE102007060632A1 (de) * | 2007-12-17 | 2009-06-18 | Robert Bosch Gmbh | Verfahren zum Herstellen eines Kappenwafers für einen Sensor |
US8900931B2 (en) | 2007-12-26 | 2014-12-02 | Skyworks Solutions, Inc. | In-situ cavity integrated circuit package |
JP2009200093A (ja) * | 2008-02-19 | 2009-09-03 | Murata Mfg Co Ltd | 中空型の電子部品 |
US7855618B2 (en) | 2008-04-30 | 2010-12-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator electrical impedance transformers |
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JP4674622B2 (ja) * | 2008-09-05 | 2011-04-20 | ミツミ電機株式会社 | センサモジュール及びその製造方法 |
JP4972633B2 (ja) * | 2008-12-11 | 2012-07-11 | 日東電工株式会社 | 半導体装置の製造方法 |
JP4781440B2 (ja) * | 2009-02-05 | 2011-09-28 | ソニー エリクソン モバイル コミュニケーションズ, エービー | 画像撮影装置、画像撮影装置の制御方法及び制御プログラム |
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US8902023B2 (en) | 2009-06-24 | 2014-12-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
US8248185B2 (en) | 2009-06-24 | 2012-08-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator structure comprising a bridge |
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US9243316B2 (en) | 2010-01-22 | 2016-01-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method of fabricating piezoelectric material with selected c-axis orientation |
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Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3784883A (en) * | 1971-07-19 | 1974-01-08 | Communications Transistor Corp | Transistor package |
DE3011730C2 (de) * | 1980-03-26 | 1982-05-27 | Siemens AG, 1000 Berlin und 8000 München | Gehäuse für elektrische Bauelemente, Bauelementegruppen oder integrierte Schaltungen |
FR2579829B1 (fr) * | 1985-03-29 | 1988-06-24 | Thomson Csf | Procede de fabrication de dispositifs a ondes de surface |
JPS61248453A (ja) * | 1985-04-25 | 1986-11-05 | Fujitsu Ltd | セラミツク基板および半導体装置の製造方法 |
JPS62109420A (ja) * | 1985-11-07 | 1987-05-20 | Alps Electric Co Ltd | 弾性表面波素子 |
US4833102A (en) * | 1987-03-17 | 1989-05-23 | National Semiconductor Corporation | Process of making a ceramic lid for use in a hermetic seal package |
JPH01231411A (ja) * | 1988-03-11 | 1989-09-14 | Toshiba Corp | 弾性表面波共振子フィルタの製造方法 |
US4924589A (en) * | 1988-05-16 | 1990-05-15 | Leedy Glenn J | Method of making and testing an integrated circuit |
US5254871A (en) * | 1988-11-08 | 1993-10-19 | Bull, S.A. | Very large scale integrated circuit package, integrated circuit carrier and resultant interconnection board |
US5166773A (en) * | 1989-07-03 | 1992-11-24 | General Electric Company | Hermetic package and packaged semiconductor chip having closely spaced leads extending through the package lid |
US5047711A (en) * | 1989-08-23 | 1991-09-10 | Silicon Connections Corporation | Wafer-level burn-in testing of integrated circuits |
JPH03293808A (ja) * | 1990-04-11 | 1991-12-25 | Fujitsu Ltd | 弾性表面波素子の製造方法 |
JP2967215B2 (ja) * | 1990-10-12 | 1999-10-25 | 株式会社村田製作所 | チップ型電子部品の製造方法 |
US5373627A (en) * | 1993-11-23 | 1994-12-20 | Grebe; Kurt R. | Method of forming multi-chip module with high density interconnections |
US5369057A (en) * | 1993-12-21 | 1994-11-29 | Delco Electronics Corporation | Method of making and sealing a semiconductor device having an air path therethrough |
-
1993
- 1993-01-27 US US08/009,530 patent/US5448014A/en not_active Expired - Lifetime
-
1994
- 1994-01-26 JP JP6007050A patent/JP2820609B2/ja not_active Expired - Lifetime
- 1994-01-26 DE DE69417781T patent/DE69417781T2/de not_active Expired - Fee Related
- 1994-01-26 SG SG1995001629A patent/SG74536A1/en unknown
- 1994-01-26 EP EP94300565A patent/EP0609062B1/en not_active Expired - Lifetime
- 1994-01-27 KR KR1019940001628A patent/KR100299415B1/ko not_active IP Right Cessation
- 1994-01-27 CN CN94102667A patent/CN1040385C/zh not_active Expired - Fee Related
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CN109632121A (zh) * | 2018-12-10 | 2019-04-16 | 上海交通大学 | 一种基于导电通孔的温度传感器封装结构及制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2820609B2 (ja) | 1998-11-05 |
JPH06318625A (ja) | 1994-11-15 |
DE69417781T2 (de) | 1999-09-16 |
CN1040385C (zh) | 1998-10-21 |
KR100299415B1 (ko) | 2001-11-30 |
EP0609062B1 (en) | 1999-04-14 |
US5448014A (en) | 1995-09-05 |
EP0609062A1 (en) | 1994-08-03 |
KR940018899A (ko) | 1994-08-19 |
SG74536A1 (en) | 2000-08-22 |
DE69417781D1 (de) | 1999-05-20 |
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