CN1109202A - 集成电路及其形成方法 - Google Patents
集成电路及其形成方法 Download PDFInfo
- Publication number
- CN1109202A CN1109202A CN94115626A CN94115626A CN1109202A CN 1109202 A CN1109202 A CN 1109202A CN 94115626 A CN94115626 A CN 94115626A CN 94115626 A CN94115626 A CN 94115626A CN 1109202 A CN1109202 A CN 1109202A
- Authority
- CN
- China
- Prior art keywords
- layer
- conductive material
- material layer
- inductor
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US115833 | 1993-09-03 | ||
US08/115,833 US5416356A (en) | 1993-09-03 | 1993-09-03 | Integrated circuit having passive circuit elements |
US115,833 | 1993-09-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1109202A true CN1109202A (zh) | 1995-09-27 |
CN1040380C CN1040380C (zh) | 1998-10-21 |
Family
ID=22363667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN94115626A Expired - Lifetime CN1040380C (zh) | 1993-09-03 | 1994-09-01 | 具有可储能无源电路元件的集成电路 |
Country Status (3)
Country | Link |
---|---|
US (2) | US5416356A (zh) |
JP (2) | JPH0786523A (zh) |
CN (1) | CN1040380C (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7068140B2 (en) | 2003-11-18 | 2006-06-27 | Via Technologies, Inc. | Coplanar transformer with a capacitor |
CN100511640C (zh) * | 2007-03-21 | 2009-07-08 | 威盛电子股份有限公司 | 具有多重导线结构的螺旋电感元件 |
CN101556860B (zh) * | 2008-04-10 | 2011-10-12 | 财团法人工业技术研究院 | 含有电感与电容并联的电路元件 |
CN103196958A (zh) * | 2013-04-08 | 2013-07-10 | 东南大学 | 一种基于有机基板的无源无线电容式湿度传感器封装结构 |
Families Citing this family (89)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0745468A (ja) * | 1993-06-29 | 1995-02-14 | Murata Mfg Co Ltd | セラミックコンデンサおよびセラミックコンデンサを取り付けた半導体装置 |
US5416356A (en) * | 1993-09-03 | 1995-05-16 | Motorola, Inc. | Integrated circuit having passive circuit elements |
GB2290913B (en) * | 1994-06-30 | 1998-03-11 | Plessey Semiconductors Ltd | Multi-chip module inductor structure |
US5541442A (en) * | 1994-08-31 | 1996-07-30 | International Business Machines Corporation | Integrated compact capacitor-resistor/inductor configuration |
DE4432727C1 (de) * | 1994-09-14 | 1996-03-14 | Siemens Ag | Integrierte Schaltungsstruktur mit einem aktiven Mikrowellenbauelement und mindestens einem passiven Bauelement |
US5578860A (en) * | 1995-05-01 | 1996-11-26 | Motorola, Inc. | Monolithic high frequency integrated circuit structure having a grounded source configuration |
US5849355A (en) * | 1996-09-18 | 1998-12-15 | Alliedsignal Inc. | Electroless copper plating |
US6285070B1 (en) * | 1995-12-22 | 2001-09-04 | Micron Technology, Inc. | Method of forming semiconductor die with integral decoupling capacitor |
US6563192B1 (en) | 1995-12-22 | 2003-05-13 | Micron Technology, Inc. | Semiconductor die with integral decoupling capacitor |
DE69720701T2 (de) * | 1996-12-30 | 2004-01-15 | Koninkl Philips Electronics Nv | Anordnung mit einer integrierten spule |
US5844299A (en) * | 1997-01-31 | 1998-12-01 | National Semiconductor Corporation | Integrated inductor |
SE516249C2 (sv) | 1997-02-19 | 2001-12-10 | Ericsson Telefon Ab L M | Flödeskontroll vid switching |
DE69737411T2 (de) * | 1997-02-28 | 2007-10-31 | Telefonaktiebolaget Lm Ericsson (Publ) | Verbesserter q-Induktor mit mehreren Metallisierungsschichten |
US5936299A (en) * | 1997-03-13 | 1999-08-10 | International Business Machines Corporation | Substrate contact for integrated spiral inductors |
US5872489A (en) * | 1997-04-28 | 1999-02-16 | Rockwell Science Center, Llc | Integrated tunable inductance network and method |
US5969590A (en) * | 1997-08-05 | 1999-10-19 | Applied Micro Circuits Corporation | Integrated circuit transformer with inductor-substrate isolation |
US6160303A (en) * | 1997-08-29 | 2000-12-12 | Texas Instruments Incorporated | Monolithic inductor with guard rings |
US6326314B1 (en) | 1997-09-18 | 2001-12-04 | National Semiconductor Corporation | Integrated inductor with filled etch |
KR100279753B1 (ko) * | 1997-12-03 | 2001-03-02 | 정선종 | 반도체 집적회로 제조공정을 이용한 인덕터 제조방법 |
US6075427A (en) * | 1998-01-23 | 2000-06-13 | Lucent Technologies Inc. | MCM with high Q overlapping resonator |
DE69840827D1 (de) * | 1998-06-30 | 2009-06-25 | Asulab Sa | Induktiver Sensor |
US6555913B1 (en) * | 1998-07-17 | 2003-04-29 | Murata Manufacturing Co., Ltd. | Electronic component having a coil conductor with photosensitive conductive paste |
US6310386B1 (en) * | 1998-12-17 | 2001-10-30 | Philips Electronics North America Corp. | High performance chip/package inductor integration |
US7381642B2 (en) * | 2004-09-23 | 2008-06-03 | Megica Corporation | Top layers of metal for integrated circuits |
US8421158B2 (en) * | 1998-12-21 | 2013-04-16 | Megica Corporation | Chip structure with a passive device and method for forming the same |
US6303423B1 (en) * | 1998-12-21 | 2001-10-16 | Megic Corporation | Method for forming high performance system-on-chip using post passivation process |
US6965165B2 (en) * | 1998-12-21 | 2005-11-15 | Mou-Shiung Lin | Top layers of metal for high performance IC's |
US7531417B2 (en) * | 1998-12-21 | 2009-05-12 | Megica Corporation | High performance system-on-chip passive device using post passivation process |
US8178435B2 (en) * | 1998-12-21 | 2012-05-15 | Megica Corporation | High performance system-on-chip inductor using post passivation process |
US6869870B2 (en) * | 1998-12-21 | 2005-03-22 | Megic Corporation | High performance system-on-chip discrete components using post passivation process |
US6495442B1 (en) * | 2000-10-18 | 2002-12-17 | Magic Corporation | Post passivation interconnection schemes on top of the IC chips |
JP2001044778A (ja) * | 1999-07-27 | 2001-02-16 | Fuji Electric Co Ltd | 複合電子部品 |
US7105420B1 (en) * | 1999-10-07 | 2006-09-12 | Chartered Semiconductor Manufacturing Ltd. | Method to fabricate horizontal air columns underneath metal inductor |
US6404615B1 (en) | 2000-02-16 | 2002-06-11 | Intarsia Corporation | Thin film capacitors |
US6539253B2 (en) | 2000-08-26 | 2003-03-25 | Medtronic, Inc. | Implantable medical device incorporating integrated circuit notch filters |
TW531806B (en) * | 2000-10-04 | 2003-05-11 | Infineon Technologies Ag | Method for fabricating a micorelectronic circuit having at least one monolithically integrated coil and micorelectonic circuit having at least one monolithically integrated coil |
US6486530B1 (en) | 2000-10-16 | 2002-11-26 | Intarsia Corporation | Integration of anodized metal capacitors and high temperature deposition capacitors |
US7372161B2 (en) * | 2000-10-18 | 2008-05-13 | Megica Corporation | Post passivation interconnection schemes on top of the IC chips |
US7271489B2 (en) * | 2003-10-15 | 2007-09-18 | Megica Corporation | Post passivation interconnection schemes on top of the IC chips |
US6567703B1 (en) | 2000-11-08 | 2003-05-20 | Medtronic, Inc. | Implantable medical device incorporating miniaturized circuit module |
US6362012B1 (en) | 2001-03-05 | 2002-03-26 | Taiwan Semiconductor Manufacturing Company | Structure of merged vertical capacitor inside spiral conductor for RF and mixed-signal applications |
US6373121B1 (en) * | 2001-03-23 | 2002-04-16 | United Microelectronics Corp. | Silicon chip built-in inductor structure |
US7038294B2 (en) * | 2001-03-29 | 2006-05-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Planar spiral inductor structure with patterned microelectronic structure integral thereto |
JP3939504B2 (ja) * | 2001-04-17 | 2007-07-04 | カシオ計算機株式会社 | 半導体装置並びにその製造方法および実装構造 |
US6759275B1 (en) * | 2001-09-04 | 2004-07-06 | Megic Corporation | Method for making high-performance RF integrated circuits |
TW544882B (en) | 2001-12-31 | 2003-08-01 | Megic Corp | Chip package structure and process thereof |
TW503496B (en) * | 2001-12-31 | 2002-09-21 | Megic Corp | Chip packaging structure and manufacturing process of the same |
TW584950B (en) | 2001-12-31 | 2004-04-21 | Megic Corp | Chip packaging structure and process thereof |
US6673698B1 (en) | 2002-01-19 | 2004-01-06 | Megic Corporation | Thin film semiconductor package utilizing a glass substrate with composite polymer/metal interconnect layers |
JP3886413B2 (ja) * | 2002-05-17 | 2007-02-28 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
US20030231093A1 (en) * | 2002-06-13 | 2003-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Microelectronic inductor structure with annular magnetic shielding layer |
US7268579B2 (en) * | 2002-08-23 | 2007-09-11 | Samsung Electronics Co., Ltd. | Semiconductor integrated circuit having on-chip termination |
US6798039B1 (en) | 2002-10-21 | 2004-09-28 | Integrated Device Technology, Inc. | Integrated circuit inductors having high quality factors |
US7514359B2 (en) * | 2003-01-14 | 2009-04-07 | Alcatel-Lucent Usa Inc. | Adhering layers to metals with dielectric adhesive layers |
US7319277B2 (en) * | 2003-05-08 | 2008-01-15 | Megica Corporation | Chip structure with redistribution traces |
TWI236763B (en) * | 2003-05-27 | 2005-07-21 | Megic Corp | High performance system-on-chip inductor using post passivation process |
JPWO2004107444A1 (ja) * | 2003-05-29 | 2006-07-20 | 三菱電機株式会社 | 半導体装置 |
US7459790B2 (en) | 2003-10-15 | 2008-12-02 | Megica Corporation | Post passivation interconnection schemes on top of the IC chips |
US7394161B2 (en) * | 2003-12-08 | 2008-07-01 | Megica Corporation | Chip structure with pads having bumps or wirebonded wires formed thereover or used to be tested thereto |
US7151430B2 (en) * | 2004-03-03 | 2006-12-19 | Telefonaktiebolaget Lm Ericsson (Publ) | Method of and inductor layout for reduced VCO coupling |
KR100593659B1 (ko) * | 2004-07-21 | 2006-06-28 | 삼성전자주식회사 | 원자층 적층 방법과 이를 이용한 게이트 구조물의 제조방법 및 커패시터의 제조 방법 |
KR100611072B1 (ko) * | 2004-08-11 | 2006-08-10 | 삼성전자주식회사 | 원자층 적층 방법과 이를 이용한 게이트 구조물의 제조방법 및 커패시터의 제조 방법 |
US7423346B2 (en) * | 2004-09-09 | 2008-09-09 | Megica Corporation | Post passivation interconnection process and structures |
US7355282B2 (en) * | 2004-09-09 | 2008-04-08 | Megica Corporation | Post passivation interconnection process and structures |
US8008775B2 (en) | 2004-09-09 | 2011-08-30 | Megica Corporation | Post passivation interconnection structures |
US7521805B2 (en) * | 2004-10-12 | 2009-04-21 | Megica Corp. | Post passivation interconnection schemes on top of the IC chips |
JP4762531B2 (ja) * | 2004-11-30 | 2011-08-31 | 太陽誘電株式会社 | 電子部品及びその製造方法 |
US8384189B2 (en) | 2005-03-29 | 2013-02-26 | Megica Corporation | High performance system-on-chip using post passivation process |
TWI330863B (en) * | 2005-05-18 | 2010-09-21 | Megica Corp | Semiconductor chip with coil element over passivation layer |
CN1901163B (zh) | 2005-07-22 | 2011-04-13 | 米辑电子股份有限公司 | 连续电镀制作线路组件的方法及线路组件结构 |
CN1905361B (zh) * | 2005-07-27 | 2012-06-13 | 精工爱普生株式会社 | 半导体装置及振荡器 |
US7473999B2 (en) * | 2005-09-23 | 2009-01-06 | Megica Corporation | Semiconductor chip and process for forming the same |
JP4907292B2 (ja) * | 2005-10-14 | 2012-03-28 | 株式会社半導体エネルギー研究所 | 半導体装置及び前記半導体装置を用いた通信システム |
EP1952312B1 (en) * | 2005-10-14 | 2012-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and communication system using the semiconductor device |
US20080122029A1 (en) * | 2006-11-03 | 2008-05-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Inductor utilizing pad metal layer |
US8749021B2 (en) * | 2006-12-26 | 2014-06-10 | Megit Acquisition Corp. | Voltage regulator integrated with semiconductor chip |
FR2911992A1 (fr) * | 2007-01-30 | 2008-08-01 | St Microelectronics Sa | Inductance multiniveaux |
JP5252486B2 (ja) * | 2008-05-14 | 2013-07-31 | 学校法人慶應義塾 | インダクタ素子、集積回路装置、及び、三次元実装回路装置 |
US7935549B2 (en) * | 2008-12-09 | 2011-05-03 | Renesas Electronics Corporation | Seminconductor device |
JP5424382B2 (ja) * | 2008-12-25 | 2014-02-26 | 株式会社指月電機製作所 | 誘導加熱用lcモジュール |
US20100165585A1 (en) * | 2008-12-26 | 2010-07-01 | Megica Corporation | Chip packages with power management integrated circuits and related techniques |
JP5395458B2 (ja) | 2009-02-25 | 2014-01-22 | 学校法人慶應義塾 | インダクタ素子及び集積回路装置 |
US8624353B2 (en) * | 2010-12-22 | 2014-01-07 | Stats Chippac, Ltd. | Semiconductor device and method of forming integrated passive device over semiconductor die with conductive bridge and fan-out redistribution layer |
US9018624B2 (en) * | 2012-09-13 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance |
WO2017065141A1 (ja) | 2015-10-16 | 2017-04-20 | 株式会社村田製作所 | Lc複合電子部品、およびlc複合電子部品の実装構造 |
US10110166B1 (en) * | 2017-06-07 | 2018-10-23 | Psemi Corporation | LNA with variable gain and switched degeneration inductor |
TWI670820B (zh) * | 2018-06-12 | 2019-09-01 | 世界先進積體電路股份有限公司 | 半導體結構 |
US10714410B1 (en) * | 2019-01-15 | 2020-07-14 | Vanguard International Semiconductor Corporation | Semiconductor structure |
JP7283434B2 (ja) * | 2020-04-20 | 2023-05-30 | 株式会社村田製作所 | 集積受動部品 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
LU38614A1 (zh) * | 1959-05-06 | |||
JPS4921984B1 (zh) * | 1969-05-28 | 1974-06-05 | ||
JPS5338274A (en) * | 1976-09-21 | 1978-04-08 | Oki Electric Ind Co Ltd | Lc compound circuit |
FR2563050B1 (fr) * | 1984-04-13 | 1987-01-16 | Thomson Csf | Combineur compact de dispositifs semiconducteurs, fonctionnant en hyperfrequences |
US4745104A (en) * | 1985-04-15 | 1988-05-17 | The Regents Of The University Of California | Pseudopterosin and synthetic derivatives thereof |
US4801883A (en) * | 1986-06-02 | 1989-01-31 | The Regents Of The University Of California | Integrated-circuit one-way isolation coupler incorporating one or several carrier-domain magnetometers |
JPS63140560A (ja) * | 1986-12-02 | 1988-06-13 | Mitsubishi Electric Corp | 半導体モノリシツクバイアス給電回路 |
US4969032A (en) * | 1988-07-18 | 1990-11-06 | Motorola Inc. | Monolithic microwave integrated circuit having vertically stacked components |
US5223735A (en) * | 1988-09-30 | 1993-06-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit device in which circuit functions can be remedied or changed and the method for producing the same |
JPH0389548A (ja) * | 1989-08-31 | 1991-04-15 | Fujitsu Ltd | 半導体集積回路 |
US5116776A (en) * | 1989-11-30 | 1992-05-26 | Sgs-Thomson Microelectronics, Inc. | Method of making a stacked copacitor for dram cell |
CA2072277A1 (en) * | 1991-07-03 | 1993-01-04 | Nobuo Shiga | Inductance element |
US5283462A (en) * | 1991-11-04 | 1994-02-01 | Motorola, Inc. | Integrated distributed inductive-capacitive network |
US5177381A (en) * | 1991-12-06 | 1993-01-05 | Motorola, Inc. | Distributed logarithmic amplifier and method |
JP3257813B2 (ja) * | 1992-01-30 | 2002-02-18 | テルモ株式会社 | 光電変換器 |
US5416356A (en) * | 1993-09-03 | 1995-05-16 | Motorola, Inc. | Integrated circuit having passive circuit elements |
-
1993
- 1993-09-03 US US08/115,833 patent/US5416356A/en not_active Expired - Lifetime
-
1994
- 1994-08-31 JP JP6229007A patent/JPH0786523A/ja active Pending
- 1994-09-01 CN CN94115626A patent/CN1040380C/zh not_active Expired - Lifetime
- 1994-09-29 US US08/287,336 patent/US5481131A/en not_active Expired - Lifetime
-
2003
- 2003-05-20 JP JP2003141664A patent/JP4485145B2/ja not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7068140B2 (en) | 2003-11-18 | 2006-06-27 | Via Technologies, Inc. | Coplanar transformer with a capacitor |
CN100511640C (zh) * | 2007-03-21 | 2009-07-08 | 威盛电子股份有限公司 | 具有多重导线结构的螺旋电感元件 |
CN101556860B (zh) * | 2008-04-10 | 2011-10-12 | 财团法人工业技术研究院 | 含有电感与电容并联的电路元件 |
CN103196958A (zh) * | 2013-04-08 | 2013-07-10 | 东南大学 | 一种基于有机基板的无源无线电容式湿度传感器封装结构 |
Also Published As
Publication number | Publication date |
---|---|
US5416356A (en) | 1995-05-16 |
JPH0786523A (ja) | 1995-03-31 |
CN1040380C (zh) | 1998-10-21 |
JP4485145B2 (ja) | 2010-06-16 |
JP2004031936A (ja) | 2004-01-29 |
US5481131A (en) | 1996-01-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1040380C (zh) | 具有可储能无源电路元件的集成电路 | |
EP0700091B1 (en) | Integrated compact capacitor-resistor/inductor configuration | |
TWI395240B (zh) | 積體半導體電感器及其形成方法與積體半導體濾波器 | |
US7381607B2 (en) | Method of forming a spiral inductor in a semiconductor substrate | |
EP0643402B1 (en) | Inductive structures for semiconductor integrated circuits | |
CN100337330C (zh) | 射频半导体器件及其制造方法 | |
EP0180808B1 (en) | Electrical interconnection and method for its fabrication | |
US5915188A (en) | Integrated inductor and capacitor on a substrate and method for fabricating same | |
US4969032A (en) | Monolithic microwave integrated circuit having vertically stacked components | |
CN1084050C (zh) | 含有带无源元件的薄膜结构的电子元件 | |
US5122227A (en) | Method of making a monolithic integrated magnetic circuit | |
US7129561B2 (en) | Tri-metal and dual-metal stacked inductors | |
TW200539200A (en) | Topographically elevated microelectronic capacitor structure | |
US6830984B2 (en) | Thick traces from multiple damascene layers | |
US11942423B2 (en) | Series inductors | |
US20130277798A1 (en) | Implementing Semiconductor Signal-Capable Capacitors with Deep Trench and TSV Technologies | |
CN1166014C (zh) | 半导体芯片上的电感的结构及其制造方法 | |
US20050092981A1 (en) | Superconducting integrated circuit and methods of forming same | |
KR100442144B1 (ko) | 반도체 장치의 다층 커패시터 제조 방법 | |
US20220320075A1 (en) | Electrical passive elements of an esd power clamp in a backside back end of line (b-beol) process | |
Dalmia et al. | High-Q RF passives on organic substrates using a low-cost low-temperature laminate process | |
KR100905370B1 (ko) | 고주파 반도체 소자의 인덕터 형성방법 | |
KR20040070709A (ko) | 반도체 금속 라인 제조 공정에서의 에어 갭 형성 방법 | |
CN1450642A (zh) | 螺旋电感内含垂直电容的结构 | |
WO2019135859A1 (en) | High density and reliable vertical natural capacitors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: FREEDOM SEMICONDUCTORS CO. Free format text: FORMER OWNER: MOTOROLA, INC. Effective date: 20040813 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20040813 Address after: Texas in the United States Patentee after: FreeScale Semiconductor Address before: Illinois Instrunment Patentee before: Motorola, Inc. |
|
C56 | Change in the name or address of the patentee |
Owner name: FISICAL SEMICONDUCTOR INC. Free format text: FORMER NAME: FREEDOM SEMICONDUCTOR CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Texas in the United States Patentee after: FREESCALE SEMICONDUCTOR, Inc. Address before: Texas in the United States Patentee before: FreeScale Semiconductor |
|
C17 | Cessation of patent right | ||
CX01 | Expiry of patent term |
Expiration termination date: 20140901 Granted publication date: 19981021 |