CN1112728C - 芯片载体组件及其制造方法 - Google Patents

芯片载体组件及其制造方法 Download PDF

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CN1112728C
CN1112728C CN95105028A CN95105028A CN1112728C CN 1112728 C CN1112728 C CN 1112728C CN 95105028 A CN95105028 A CN 95105028A CN 95105028 A CN95105028 A CN 95105028A CN 1112728 C CN1112728 C CN 1112728C
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epoxy
flexible
chip
assembly
substrate
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CN1123468A (zh
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托马斯·莫兰·卡纳尼
迈克·安东尼·盖尼思
平·匡·塞托
候塞因·肖卡土拉哈
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International Business Machines Corp
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Abstract

一种芯片载体组件，包括：一个基片；一个电连接到所述基片的半导体芯片；在芯片的一个表面上的一层柔性环氧树脂；一个通过所述柔性环氧树脂粘结到芯片的所述表面的散热器。一种芯片载体组件的制造方法，包括步骤：将半导体芯片的第一表面电连接到一个基片上；在半导体芯片的第二表面和散热器之间沉积未完全固化的柔性环氧树脂；将散热器和芯片压紧在一起；以及加热该组件以固化柔性环氧树脂。

Description

芯片载体组件及其制造方法
本发明通常涉及芯片载体组件及该芯片载体组件的制造方法。更具体地说，本发明涉及通过柔性环氧树脂固定有排热器的芯片载体组件以及这种芯片载体组件的制造方法。
下面的段落旨在加进参考引用的内容，不是为了寻求对所述
现有技术的承认。
倒装芯片利用热油实现和散热器的热连接，如Jarvela的美国专利No.4,000,509所述。一般来说，要将散热器(如盖帽、散热器板、带叶片的散热器、或者液冷的冷却板)机械地连接到芯片载体组件或电路板上，以使固定到组件或电路板上的倒装芯片和散热器的一个表面之间留有一个很小的间隙。这个间隙中充有热油，如硅油，热油中可填充高热传导材料(如银)或陶瓷材料(如氧化铝)，从而在芯片和散热器之间提供一个高质量的热传导通路。
环氧树脂已用于将半导体芯片固定某些基片上。在Dessai的美国专利5,159,535中，使用环氧树脂将半导体计算机芯片的背面连接到一种铜包覆殷钢(铜-殷钢-铜)插件(interposer)中，该插件的热膨胀系数(CTE)介于半导体的热膨胀系数和玻璃纤维环氧树脂电路板的热膨胀系数之间，该插件是通过焊接固定到该电路板上的。另外，在Desai的美国专利中，如果制造电路板的材料(如殷钢)的热膨胀系数非常接近半导体芯片的热膨胀系数，则可使用导热环氧树脂把芯片直接固定到电路板上。类似地，Anschel的美国专利No.4,914,551公开了使用环氧树脂将半导体芯片固定到一种由碳化硅(SiC)、氮化铝(AlC)、或铜—殷钢—铜制成的散热器上的方法，其中的环氧树脂中填充金刚石颗粒，以使得诸热膨胀系数差不大于每摄氏度百万分之二(ppm/℃)。下述材料的热膨胀系数(以ppm/℃为单位)分别是：Si为2.6、SiC为2.6、AlN为4.6、殷钢为2、铜—殷钢—铜为3-6、环氧树脂为50-80、玻璃纤维—环氧树脂为11-18、填充熔融石英的环氧树脂为5-7。在“IBM技术公开快讯(IBM Technical Disclosure Bulletin)”第32卷第4A期(1989年9月)中G.Schrotike和D.J.Willson的文章“直接芯片固定电路的散热(Removal of Heat Form Direct Chip AttachCircuitry)”公开了一种方法，它使用粘结剂将硅芯片固定到铜—殷钢—铜散热器上。在授与Nitsch的美国专利No.5,168,430的图2中表示了一个粘结到一个散热器上的混合电路结构3，Bennett的欧洲专利申请93104433.3公开了一种使用导电的环氧树脂将半导体芯片固定到引线框架上的方案。
环氧树脂已用于包覆倒装芯片的连接，如Beckham的美国专利No.4,604,644、Christie的美国专利No.4,999,699和No.5,089,440所述，以减小在C4(可控塌陷芯片连接)组件中的应力。C4组件如美国专利No.3,458,925所示。用于这些目的的环氧树脂是公知的，如Itoh的美国专利4,701,482所述。一般来说，这样一些环氧树脂的玻璃转换(glass transition)温度(Tg)约为140-150℃，杨氏模量约为1,000,000psi(1psi＝0.07kg/cm2)或更大。已经采用环氧树脂来转移模制过程或注模过程的热量以形成电子元件，如QFP(四芯线平直组件)、DIP(双线组件)、和其它塑料封装组件。诸如陶瓷四芯线平直组件之类的陶瓷芯片载件组件一般具有由环氧树脂连在一起的两个陶瓷部分。可以使用环氧树脂、或者最好使用热熔塑胶来包覆ECA(导电粘结剂)芯片附件。
可使用环氧树脂将诸如铝(Al)或铜(Cu)之类的散热器粘结到塑料封装的组件上，其中的铝可通过铬酸盐转化作用涂敷或氧化，其中的铜可用镍(Ni)涂敷。铝的热膨胀系数CTE是23ppm/℃，铜的热膨胀系数CTE是17ppm/℃。对于较高温度下的应用，使用陶瓷芯片组件，并且使用硅粘结剂将散热器粘结到组件的顶部，或者通过螺丝或通过夹具机械地固定散热器。“Ablebond P1-897(9/93)”的一个技术数据表(A technical data sheet for Ablebond P1-897 of 9/93)建议：使用这种材料将大型的芯片固定到一个银涂敷的铜引线框架上。“Prima-Bond TM EG7655”的一个产品数据表(A product data sheet for Prima-Bond TMEG 7655)建议：使用这种材料“粘结具有相差极大的热膨胀系数的那些材料“(即，氧化铝和铝、硅和铜、等等)。
这些发明可应用到陶瓷顶部组件中，如CQFP(陶瓷的四芯线平直组件)，也可应用到倒装芯片载体组件中，例如：无盖的CQFP；TBGA(TAB球格阵列)、TAB(带自动粘结)组件，如上述的Desai的专利、以及Clementi的美国专利No.4,681,654、和Flynn的美国专利No.5,203,075所述；Behum描述过的以及Hoebner的美国专利申请序列号08/144,981中描述的CBGA(陶瓷球格阵列)组件；White在美国专利申请序列号08/178,944中描述的DCAM(直接固定的芯片组件)；以及公知的CPGA(陶瓷针格阵列)组件。
上述所引用的文件在此引作为本发明的参考文件，以便能对本发明提供足以实现的公开并支持本申请人依据法律所能够享有的权利要求。
本发明的目的是提供一种芯片载体组件，其中改善了芯片散热的热效率以提高可靠性，并且有可能增加热能耗散以得到更高的器件密度，本发明还提供这种芯片载体组件的制造方法。
为了实现本发明的这些目的，将铝或铜的散热器或散热器板直接粘结到半导体倒装芯片或陶瓷QFP的背侧。本申请人已经发现，可从使用玻璃转换温度低于室温的一种薄层高柔性环氧树脂直接把散热器粘结到倒装芯片或陶瓷盖帽的背侧，这种粘结即使经下述热循环试验后依旧是很牢固的：1500次从0℃到100℃的循环、400次从-25℃到125℃的循环、以及300次从-40℃到140℃的循环；或者在130℃连续加热1000小时之后。
具体地说，本发明的技术方案如下所述。
一种芯片载体组件，包括：
一个基片；
一个电连接到所述基片的半导体芯片；
在芯片的一个表面上的一层柔性环氧树脂；
一个通过所述柔性环氧树脂粘结到芯片的所述表面的散热器。
一种芯片载体组件的制造方法，包括步骤：
将半导体芯片的第一表面电连接到一个基片上；
在半导体芯片的第二表面和散热器之间沉积未完全固化的柔性环氧树脂；
将散热器和芯片压紧在一起；以及
加热该组件以固化柔性环氧树脂。
图1表示用柔性环氧树脂粘结到CQFP的一个铝散热器，以说明本发明的一个实施例；
图2表示用柔性环氧树脂粘结到在一个无盖帽的CQFP中的半导体倒装芯片上的一个铝散热器，以说明本发明的另一个实施例；
图3表示用柔性环氧树脂连接到CPGA中的一个半导体倒装芯片上的铝散热器，以说明本发明的另一个实施例；
图4表示和图3类似的另一个实施例，其中的铝散热器是通过柔性环氧树脂粘结到CBGA或PBGA的半导体倒装芯片上的；
图5表示用柔性环氧树脂粘结到带球格阵列组件的半导体芯片上的一个铜散热器板，以说明本发明的另一个实施例；
图6表示用柔性环氧树脂粘结到一个直接芯片固定有机载体的半导体芯片上的铝散热器，以说明本发明的另一个实施例；
图7表示一个热性能得以提高的信息处理系统，其热性能是通过使用柔性环氧树脂将散热器粘结到高能量密度电子元件的A/N陶瓷的和/或硅的表面上而得到的。
典型的环氧树脂的玻璃转换温度Tg约为140-150℃，但本发明中使用的柔性环氧树脂的Tg低于约25℃，优选的Tg低于10℃，并且最好的是Tg低于0℃。另外，普通环氧树脂的杨氏模量在1，000,000psi左右，但在本发明中使用的柔性环氧树脂的杨氏模量低于100,000psi，优选的低于50,000psi，甚至低于20,000psi则更好。从AI Technologies公司(地址是：9#，Princess Road、Laurencevill，N.J.08648)可得到一种名称为EG7655的两部分型的柔性环氧树脂，其Tg约为-25℃，杨氏模量小于约20,000psi左右。单一部分的名称为ABLEBONDR P1-8971的柔性环氧树脂由Ablestick Lab-oratories销售(其地址为：20021#，Susana  Road，RanchoDominguez，CA90221)，其Tg约为5℃，其杨氏模量小于50,000psi左右。
在图1中，CQFP组件由上、下两个预制的烧结陶瓷片100、102(最好是铝-氮陶瓷)制成。使用例如一种普通的模片固定环氧树脂108将半导体芯片106(最好是硅芯片)粘结到该平直组件的上半片100上，并且该芯片被线(112)粘结到引线框架104上。使用例如普通的环氧树脂110、114将上半片100粘结到下半片102上。空腔116一般来说是空的，但也可包含一种不导电但传热的物质(例如硅油)。然后，使用柔性环氧树脂薄层120将一个铝散热器118(较佳地通过阳极氧化作用或者更好地通过铬酸盐转化作用来涂敷)粘结到该陶瓷组件的顶部。
Al-N的热膨胀系数CTE约为4.6ppm/℃，铝散热器的热膨胀系数CTE约为23.6ppm/℃，这导致热膨胀系数差为19ppm/℃。陶瓷顶部是相对平滑的表面，若在组件和散热器之间的环氧树脂发生脱层或断裂，则使从芯片向外的热传输大大降低。当对这样的结构实施热循环试验时，普通的环氧树脂将迅速失效(脱层)。硅基粘结剂的玻璃转换温度Tg小于25℃，其杨氏模量小于20,000psi。但在结构上，这种粘结剂粘结的强度大约是柔性环氧树脂的粘结强度的1/3-1/2。还有，硅粘结剂的组分有从掺杂薄涂敷材料的表面迁移出来的趋势。本申请人发现，柔性环氧树脂(如ABLE-BOND Pi-8971和EG7655)可满足这个试验的热循环要求。
另外，可以用环氧树脂密封剂(粘块顶部)代替上片盖帽102来保护线粘结芯片。环氧树脂可刚好盖住芯片和线粘结点，或者环氧树脂可延伸到安装该组件的电路板。还有，可以用有机材料(如玻璃纤维—环氧树脂，或铜和聚酰亚胺箔的叠层)来代替上半片陶瓷100。
图2表示没有上半片陶瓷的另一种CQFP148。半导体倒装芯片块150按周边排行的或栅格阵列的C4接点154固定到长方形的单层陶瓷芯片载体152上，C4接点154从芯片上的电触点延伸至载体152上的电触点。另外，可通过易熔焊料凸块把芯片隆起部分固定到载体上的触点上，这些易熔焊料凸块是通过电镀、焊料注入、或从移画印花过程(decal)的转移而沉积的。将例如鸥翼形引线156的引线沿着和基片159进行表面安装连接的各边缘(一般是QFP的所有四个边缘)焊接到(158)铜焊盘上。另外，可将引线的底端在组件下方弯成“J”形，或者甚至点成直接向下的。用环氧树脂160包覆接点154，并且最好用环氧树脂162包覆引线。最好涂敷一个环氧树脂涂层164来保护上层陶瓷线路(一种敷形涂敷层)。使用柔性环氧树脂166将散热器164固定到芯片150的背面。对于底面尺寸比芯片大得多的散热器，通过用柔性环氧树脂或一般的环氧树脂把散热器粘结到168处的敷形涂敷层，可以得到改进的结构强度。
硅Si的热膨胀系数CTE为2.6ppm/℃左右，散热器的铝Al的热膨胀系数CTE为23.6ppm/℃左右，这导致得到热膨胀系数差为21ppm/℃。芯片的背部极其光滑，所以导致机械粘结的效果很差，而且在芯片和散热器之间的环氧树脂的任何脱层或断裂都将使芯片的热转移量大大降低。当让该结构经受热循环试验时，普通的环氧树脂迅速失效(脱层)。硅基粘结剂的玻璃转换温度Tg小于25℃，杨氏模量小于20,000psi。但在结构上，这种粘结的强度约为柔性环氧树脂的强度的1/3-1/2。另外，硅粘结剂的组分有从掺杂了薄涂敷材料的掺杂表面迁移出来的趋势。本申请人发现，柔性环氧树脂(例如，ABLEBOND Pi-8971和EG7655)满足这种试验的热循环要求。
组件148的引线156固定到基片159(一种玻璃纤维—环氧树脂电路板或铜和聚酰亚胺膜叠层的柔性电路板)的导电焊盘(最好为铜)170上。
图3表示一个CPGA(陶瓷针格阵列组件)200。半导体倒装芯片块202的前侧(底部)通过周边排行的或栅格阵列的接点206(最好是C4接点或ECA接点)固定到一个长方形的陶瓷芯片载体204(单层或多层载体，如图中所示)上。一个引针阵列208在穿过基片214(如玻璃纤维—环氧树脂或铜与聚酰亚胺膜的柔性叠层)延伸的一些径涂覆的通孔(PTH)的两端都波焊到(210)铜焊盘212上。用环氧树脂220包覆接点206，并可把环氧树脂的敷形涂敷层222沉积在芯片上。使用柔性环氧树脂226将散热器224固定到芯片202的背侧。
图4表示和图3的CPGA类似的BGA(球格阵列)组件240。基片240可以是陶瓷的CBGA或塑料的PBGA，并且可以是单层的或多层的。同样，利用柔性环氧树脂244将散热器246固定到倒装芯片248上。
图5表示TBGA组件250。通过一些接点258或通过SATT(焊料固定带工艺)技术，将倒装芯片252的底部固定到一个柔性芯片载体基片256(一般是一个或多个带有一定图案的铜层和聚酰亚胺层的叠层)的铜焊盘254上；其中这些接点258是通过C4、热压粘结、或激光焊接形成的。通过激光焊接、热压粘结、或者通过在铜焊盘上沉积易熔焊料并且进行回流使焊料球就位，将焊料球258(最好90％的铅Pb，10％的锡Sn)固定到柔性带256的铜焊盘260上。长方形的金属框架262(如铝Al，或者最好是镀镍Ni的铜)通过粘结剂(最好是环氧树脂)264固定到柔性基片上。散热器270通过粘结剂(最好是环氧树脂)272固定到该框架262上，并通过柔性环氧树脂274固定到芯片252上。可以通过阳极氧化处理或铬酸盐转化作用对散热器进行铝处理，或者最好对散热器作镀镍Ni的铜处理。
通过在铜焊盘282上沉积焊膏(最好37％的铅Pb和63％的锡Sn)、把组件放置在基片280上，同时让焊料球位于焊膏上、然后加热该结构直到焊膏变为熔融状态形成焊料接点284为止，从而将组件250固定到基片280(如玻璃纤维—环氧树脂或上述的柔性叠层)上。另外，可用热熔塑胶或热固胶包覆的ECA286来取代球258和焊料284，并通过加热和加压将这种ECA固定到焊盘282上。
硅Si的热膨胀系数CTE约为2.6ppm/℃，铜散热器的热膨胀系数CTE约为17ppm/℃，其导致热膨胀系数差为14.4ppm/℃。同样，芯片的背部仍旧是极其光滑的，这因而导至一种脆弱的机械粘结，芯片和散热器间的环氧树脂的任何脱层或断裂，都造成从芯片转移出的热量大大减少。当这种结构经受热循环试验时，普通的环氧树脂会迅速失效(脱层)。在提供这些材料之间接合的可靠性所要求的热循环试验期间，即1500次从0到100℃的循环；400次从-25℃到125℃的循环；然后300次，从-40℃到140℃的循环，硅基粘结剂也产生脱层。本申请人发现，柔性环氧树脂(如ABLE-BOND8971和EG7655)能可靠地满足这个试验的热循环要求。
图6表示一个DCAM组件300。倒装芯片302固定到一个多层的玻璃纤维环氧树脂基片304上。沉积易熔焊料306(通过HASL、在芯片上的焊料、焊料注入，通过从不锈钢移画印花过程(stainlesssteel decal)的转移)以便在位于芯片底部的高温焊料凸块308和位于基片上表面的铜焊盘310之间进行连接。确定铜焊盘312的位置，使其能连接到位于互连的结构(图2和5中的有机材料电路板)上的铜焊盘上。可以在焊盘312提供焊料314以使进行回流焊接固定。使用柔性环氧树脂322将散热器320固定到芯片302的背侧。对于延伸长度明显超过芯片尺寸极限的散热器，通过使用柔性环氧树脂或其它公知的环氧树脂包覆在位于324处的散热器和基片304之间，就可以改善结构强度。
图7表示本发明的信息处理系统350的一个计算机网络实施例。计算机系统352和354通过光缆或电信号电缆356联网在一起。系统352和354分别具有CPU(中央处理单元)组件358、360和存贮器组件362、364。这些组件使用柔性环氧树脂366-372把散热器固定到组件上以便可在较高功率下操作，从而提高整个信息处理系统的性能。每个系统中的组件都固定到一个或多个电连接结构374、376上。这些连接结构又连接到如电池、变压器、或电源软线的电源378、380上，这些连接结构还可以连到，如磁盘驱动器、其它一些连接结构的其它的计算机设备382上。一个或多个光或电的电缆384或电缆连接器固定到这些连接结构上，以便借助于诸如键盘、CRT、调制解调器、传感器、电机等等的计算机外围设备386提供数据的输入和输出。
虽然图中没有表示出来，但本发明还包括多芯片的组件，多芯片组件在一个或多个芯片上具有各自的散热器，和/或在这样的组件中的多个芯片上具有公用的散热器，或者甚至对于多个组件具有一些公用的散热器。
尽管参照本发明的设备和方法的优选实施例描述了本发明，但本领域的技术人员都应认识到，在不脱离由权利要求书限定的本发明的构思和范围的条件下，还可进行很多变化。

Claims (24)

1.一种芯片载体组件的制造方法，包括步骤：
将半导体芯片的第一表面电连接到一个基片上；
在半导体芯片的第二表面和散热器之间沉积未完全固化的柔性环氧树脂；
将散热器和芯片压紧在一起；以及
加热该组件以固化柔性环氧树脂。
2.如权利要求1的方法，其特征在于沉积柔性环氧树脂的步骤包括：沉积玻璃转换温度小于25℃、25℃时的杨氏模量小于100,000psi的柔性环氧树脂。
3.如权利要求1的方法，其特征在于沉积柔性环氧树脂的步骤包括：沉积玻璃转换温度小于10℃的柔性环氧树脂。
4.如权利要求1的方法，其特征在于沉积柔性环氧树脂的步骤包括：沉积玻璃转换温度小于0℃的柔性环氧树脂。
5.如权利要求1的方法，其特征在于沉积柔性环氧树脂的步骤包括：沉积在25℃时的杨氏模量小于50,000psi的柔性环氧树脂。
6.如权利要求1的方法，其特征在于沉积柔性环氧树脂的步骤包括：沉积在25℃时的杨氏模量小于20,000psi的柔性环氧树脂。
7.如权利要求6的方法，其特征在于该方法还包括步骤：从铝和铜中选择出金属散热器的基底。
8.如权利要求1的方法，其特征在于电连接的步骤包括如下步骤：
在带有电连接器阵列的一个基片表面上定位一个半导体倒装芯片，该电连接器从所述芯片的第一面对表面延伸到该基片上连接器的一个匹配阵列上；
加热以实现芯片和基片机械上的连接和电连接；
在芯片的一个第二表面和散热器之间沉积未完全固化的柔性环氧树脂；
将散热器和芯片压紧在一起；以及
加热该组件以固化柔性环氧树脂。
9.如权利要求8的方法，其特征在于还包括选择一个金属散热器的步骤。
10.如权利要求8的方法，其特征在于还包括选择一个陶瓷基片的步骤。
11.如权利要求8的方法，其特征在于沉积柔性环氧树脂的步骤还包括：沉积玻璃转换温度小于25℃、且25℃时的杨氏模量小于100,000psi的柔性环氧树脂。
12.一种芯片载体组件，包括：
一个基片；
一个电连接到所述基片的半导体芯片；
在芯片的一个表面上的一层柔性环氧树脂；
一个通过所述柔性环氧树脂粘结到芯片的所述表面的散热器。
13.如权利要求12的组件，其特征在于所述柔性环氧树脂的玻璃转换温度小于25℃，并且在25℃时的杨氏模量小于100,000psi。
14.如权利要求12的组件，其特征在于所述柔性环氧树脂的玻璃转换温度小于10℃。
15.如权利要求12的组件，其特征在于所述柔性环氧树脂的玻璃转换温度小于0℃。
16.如权利要求12的组件，其特征在于所述柔性环氧树脂在25℃时的杨氏模量小于50,000psi。
17.如权利要求12的组件，其特征在于所述柔性环氧树脂在25℃时的杨氏模量小于20,000psi。
18.如权利要求12的组件，其特征在于所述散热器包括一个铝基底。
19.如权利要求18的组件，其特征在于所述散热器有一个阳极氧化涂层。
20.如权利要求18的组件，其特征在于所述散热器有一个铬酸盐转化作用涂层。
21.如权利要求12的组件，其特征在于所述散热器包括一个铜的基底。
22.如权利要求21的组件，其特征在于所述散热器有一个镍的涂层。
23.如权利要求12的组件，其特征在于：
所述基片为第一基片，在一个第一基片表面上具有金属触点阵列并带有用于连接一个第二基片的装置；
所述半导体芯片为半导体倒装芯片，具有一个平行于所述第一基片表面的第一芯片表面，并且在所述第一芯片表面上具有和所述第一基片阵列的相应触点相匹配并且互相面对的金属触点阵列；
在所述第一基片和芯片的对应触点之间延伸的电导线；
该层柔性环氧树脂位于所述芯片的第二表面上。
24.如权利要求23的组件，其特征在于所述柔性环氧树脂的玻璃转换温度小于25℃，在25℃时的杨氏模量小于100,000psi。
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Families Citing this family (227)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY112145A (en) * 1994-07-11 2001-04-30 Ibm Direct attachment of heat sink attached directly to flip chip using flexible epoxy
US5972736A (en) * 1994-12-21 1999-10-26 Sun Microsystems, Inc. Integrated circuit package and method
US5745344A (en) 1995-11-06 1998-04-28 International Business Machines Corporation Heat dissipation apparatus and method for attaching a heat dissipation apparatus to an electronic device
US5706171A (en) * 1995-11-20 1998-01-06 International Business Machines Corporation Flat plate cooling using a thermal paste retainer
US5977629A (en) 1996-01-24 1999-11-02 Micron Technology, Inc. Condensed memory matrix
US6339875B1 (en) 1996-04-08 2002-01-22 Heat Technology, Inc. Method for removing heat from an integrated circuit
JPH09293808A (ja) * 1996-04-25 1997-11-11 Fujitsu Ltd 半導体装置
US5866953A (en) * 1996-05-24 1999-02-02 Micron Technology, Inc. Packaged die on PCB with heat sink encapsulant
JP3321357B2 (ja) * 1996-05-30 2002-09-03 株式会社東芝 半導体装置とその組み立て方法
USRE39426E1 (en) 1996-06-19 2006-12-12 International Business Machines Corporation Thermally enhanced flip chip package and method of forming
US5726079A (en) * 1996-06-19 1998-03-10 International Business Machines Corporation Thermally enhanced flip chip package and method of forming
US5956576A (en) * 1996-09-13 1999-09-21 International Business Machines Corporation Enhanced protection of semiconductors with dual surface seal
US5854512A (en) * 1996-09-20 1998-12-29 Vlsi Technology, Inc. High density leaded ball-grid array package
US6027791A (en) * 1996-09-30 2000-02-22 Kyocera Corporation Structure for mounting a wiring board
US6392431B1 (en) * 1996-10-23 2002-05-21 Aetrium, Inc. Flexibly suspended heat exchange head for a DUT
TW571373B (en) 1996-12-04 2004-01-11 Seiko Epson Corp Semiconductor device, circuit substrate, and electronic machine
CN100485896C (zh) * 1996-12-04 2009-05-06 精工爱普生株式会社 半导体装置及其制造方法
TW480636B (en) 1996-12-04 2002-03-21 Seiko Epson Corp Electronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment
US6020221A (en) * 1996-12-12 2000-02-01 Lsi Logic Corporation Process for manufacturing a semiconductor device having a stiffener member
US5891753A (en) * 1997-01-24 1999-04-06 Micron Technology, Inc. Method and apparatus for packaging flip chip bare die on printed circuit boards
JP3475426B2 (ja) * 1997-03-24 2003-12-08 セイコーエプソン株式会社 半導体装置の製造方法
JP2914342B2 (ja) * 1997-03-28 1999-06-28 日本電気株式会社 集積回路装置の冷却構造
US5889652A (en) * 1997-04-21 1999-03-30 Intel Corporation C4-GT stand off rigid flex interposer
US5900675A (en) * 1997-04-21 1999-05-04 International Business Machines Corporation Organic controlled collapse chip connector (C4) ball grid array (BGA) chip carrier with dual thermal expansion rates
US6104093A (en) * 1997-04-24 2000-08-15 International Business Machines Corporation Thermally enhanced and mechanically balanced flip chip package and method of forming
US6037659A (en) * 1997-04-28 2000-03-14 Hewlett-Packard Company Composite thermal interface pad
WO1998052220A1 (fr) * 1997-05-09 1998-11-19 Citizen Watch Co., Ltd. Procede de production d'un boitier pour semi-conducteur et systeme de carte de circuits
US5940687A (en) * 1997-06-06 1999-08-17 International Business Machines Corporation Wire mesh insert for thermal adhesives
US5866943A (en) * 1997-06-23 1999-02-02 Lsi Logic Corporation System and method for forming a grid array device package employing electomagnetic shielding
KR100320983B1 (ko) 1997-08-22 2002-06-20 포만 제프리 엘 칩조립체및직접적인개방열전도성경로의제공방법
US6317333B1 (en) * 1997-08-28 2001-11-13 Mitsubishi Denki Kabushiki Kaisha Package construction of semiconductor device
US6002171A (en) * 1997-09-22 1999-12-14 Lsi Logic Corporation Integrated heat spreader/stiffener assembly and method of assembly for semiconductor package
US5909057A (en) * 1997-09-23 1999-06-01 Lsi Logic Corporation Integrated heat spreader/stiffener with apertures for semiconductor package
US6178628B1 (en) * 1997-10-22 2001-01-30 Aavid Thermalloy, Llc Apparatus and method for direct attachment of heat sink to surface mount
US6705388B1 (en) 1997-11-10 2004-03-16 Parker-Hannifin Corporation Non-electrically conductive thermal dissipator for electronic components
JP2001523047A (ja) * 1997-11-10 2001-11-20 パーカー−ハニフイン・コーポレーシヨン 非導電性熱放散器構成要素
US6432744B1 (en) * 1997-11-20 2002-08-13 Texas Instruments Incorporated Wafer-scale assembly of chip-size packages
JPH11186003A (ja) 1997-12-25 1999-07-09 Yazaki Corp Ｐｔｃ素子の放熱構造
US6049125A (en) * 1997-12-29 2000-04-11 Micron Technology, Inc. Semiconductor package with heat sink and method of fabrication
JP3219043B2 (ja) * 1998-01-07 2001-10-15 日本電気株式会社 半導体装置のパッケージ方法および半導体装置
US5955781A (en) * 1998-01-13 1999-09-21 International Business Machines Corporation Embedded thermal conductors for semiconductor chips
US6002165A (en) * 1998-02-23 1999-12-14 Micron Technology, Inc. Multilayered lead frame for semiconductor packages
US6281573B1 (en) 1998-03-31 2001-08-28 International Business Machines Corporation Thermal enhancement approach using solder compositions in the liquid state
US6297550B1 (en) * 1998-04-01 2001-10-02 Lsi Logic Corporation Bondable anodized aluminum heatspreader for semiconductor packages
TW366548B (en) * 1998-04-18 1999-08-11 United Microelectronics Corp Trench bump block and the application of the same
JPH11307719A (ja) * 1998-04-20 1999-11-05 Mitsubishi Electric Corp 半導体装置
US6140707A (en) * 1998-05-07 2000-10-31 3M Innovative Properties Co. Laminated integrated circuit package
US5923958A (en) * 1998-05-28 1999-07-13 Pan Pacific Semiconductor Co., Ltd. Method for semiconductor chip packaging
US6075288A (en) * 1998-06-08 2000-06-13 Micron Technology, Inc. Semiconductor package having interlocking heat sinks and method of fabrication
JP3070579B2 (ja) * 1998-06-10 2000-07-31 日本電気株式会社 半導体装置の実装構造および実装方法
EP0969704A1 (en) * 1998-06-18 2000-01-05 TRW Inc. Method for reversibly bonding electronics packages in thermal and electrical contact with a surface
US6081037A (en) * 1998-06-22 2000-06-27 Motorola, Inc. Semiconductor component having a semiconductor chip mounted to a chip mount
US6409859B1 (en) * 1998-06-30 2002-06-25 Amerasia International Technology, Inc. Method of making a laminated adhesive lid, as for an Electronic device
US6215175B1 (en) 1998-07-06 2001-04-10 Micron Technology, Inc. Semiconductor package having metal foil die mounting plate
WO2000005748A2 (en) * 1998-07-22 2000-02-03 Digirad Corporation Blind pin placement on circuit boards
US6117797A (en) * 1998-09-03 2000-09-12 Micron Technology, Inc. Attachment method for heat sinks and devices involving removal of misplaced encapsulant
US6498390B1 (en) * 1998-09-16 2002-12-24 Intel Corporation Integrated circuit package that includes a thermally conductive tape which attaches a thermal element to a plastic housing
US6255140B1 (en) * 1998-10-19 2001-07-03 Industrial Technology Research Institute Flip chip chip-scale package
US6118177A (en) * 1998-11-17 2000-09-12 Lucent Technologies, Inc. Heatspreader for a flip chip device, and method for connecting the heatspreader
US6552425B1 (en) * 1998-12-18 2003-04-22 Intel Corporation Integrated circuit package
US6197619B1 (en) * 1999-01-28 2001-03-06 International Business Machines Corporation Method for reinforcing a semiconductor device to prevent cracking
US6206997B1 (en) 1999-02-11 2001-03-27 International Business Machines Corporation Method for bonding heat sinks to overmolds and device formed thereby
US20020145207A1 (en) * 1999-03-05 2002-10-10 Anderson Sidney Larry Method and structure for integrated circuit package
US6380618B1 (en) * 1999-03-15 2002-04-30 Advanced Micro Devices, Inc. Fabrication of integrated circuits on both sides of a semiconductor wafer
JP3428488B2 (ja) * 1999-04-12 2003-07-22 株式会社村田製作所 電子部品の製造方法
US6531771B1 (en) 1999-04-20 2003-03-11 Tyco Electronics Corporation Dissipation of heat from a circuit board having bare silicon chips mounted thereon
US6162663A (en) * 1999-04-20 2000-12-19 Schoenstein; Paul G. Dissipation of heat from a circuit board having bare silicon chips mounted thereon
US6219238B1 (en) 1999-05-10 2001-04-17 International Business Machines Corporation Structure for removably attaching a heat sink to surface mount packages
US6376769B1 (en) 1999-05-18 2002-04-23 Amerasia International Technology, Inc. High-density electronic package, and method for making same
US6137174A (en) * 1999-05-26 2000-10-24 Chipmos Technologies Inc. Hybrid ASIC/memory module package
DE19924289A1 (de) 1999-05-27 2000-12-07 Siemens Ag Elektronisches Schaltungsmodul mit flexibler Zwischenschicht zwischen elektronischen Bauelementen und einem Kühlkörper
US6717819B1 (en) 1999-06-01 2004-04-06 Amerasia International Technology, Inc. Solderable flexible adhesive interposer as for an electronic package, and method for making same
US6188130B1 (en) * 1999-06-14 2001-02-13 Advanced Technology Interconnect Incorporated Exposed heat spreader with seal ring
US6544880B1 (en) 1999-06-14 2003-04-08 Micron Technology, Inc. Method of improving copper interconnects of semiconductor devices for bonding
US6255143B1 (en) * 1999-08-04 2001-07-03 St. Assembly Test Services Pte Ltd. Flip chip thermally enhanced ball grid array
TW561799B (en) 1999-08-11 2003-11-11 Fujikura Ltd Chip assembly module of bump connection type using a multi-layer printed circuit substrate
JP3414342B2 (ja) * 1999-11-25 2003-06-09 日本電気株式会社 集積回路チップの実装構造および実装方法
WO2001041209A1 (fr) * 1999-11-30 2001-06-07 Toray Engineering Co., Ltd. Dispositif de soudage de puce
US6338196B1 (en) * 1999-12-15 2002-01-15 Auer Precision Company, Inc Method of forming heat sinks having fully anodized surfaces
US6763881B1 (en) * 2000-02-18 2004-07-20 Agilent Technologies, Inc. Thermally matched gradient heat sink
US6567541B1 (en) * 2000-02-25 2003-05-20 Ahbee 1, L.P. Method and apparatus for adhesion testing of thin film materials
US6372997B1 (en) 2000-02-25 2002-04-16 Thermagon, Inc. Multi-layer structure and method for forming a thermal interface with low contact resistance between a microelectronic component package and heat sink
US6580031B2 (en) 2000-03-14 2003-06-17 Amerasia International Technology, Inc. Method for making a flexible circuit interposer having high-aspect ratio conductors
US6364669B1 (en) * 2000-07-12 2002-04-02 Advanced Micro Devices, Inc. Spring contact for providing high current power to an integrated circuit
JP2002033411A (ja) * 2000-07-13 2002-01-31 Nec Corp ヒートスプレッダ付き半導体装置及びその製造方法
US6724078B1 (en) * 2000-08-31 2004-04-20 Intel Corporation Electronic assembly comprising solderable thermal interface
US6614103B1 (en) * 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
US6787388B1 (en) * 2000-09-07 2004-09-07 Stmicroelectronics, Inc. Surface mount package with integral electro-static charge dissipating ring using lead frame as ESD device
KR20020029990A (ko) * 2000-10-16 2002-04-22 윤종용 실장리드가 구비된 기판을 포함하는 반도체 패키지 및 그제조방법
JP2002170739A (ja) * 2000-11-29 2002-06-14 Murata Mfg Co Ltd 積層セラミックコンデンサモジュール
EP1346411A2 (en) * 2000-12-01 2003-09-24 Broadcom Corporation Thermally and electrically enhanced ball grid array packaging
US6906414B2 (en) * 2000-12-22 2005-06-14 Broadcom Corporation Ball grid array package with patterned stiffener layer
US20020079572A1 (en) * 2000-12-22 2002-06-27 Khan Reza-Ur Rahman Enhanced die-up ball grid array and method for making the same
US7161239B2 (en) * 2000-12-22 2007-01-09 Broadcom Corporation Ball grid array package enhanced with a thermal and electrical connector
US7132744B2 (en) 2000-12-22 2006-11-07 Broadcom Corporation Enhanced die-up ball grid array packages and method for making the same
US6545869B2 (en) * 2001-01-17 2003-04-08 International Business Machines Corporation Adjusting fillet geometry to couple a heat spreader to a chip carrier
US6879492B2 (en) * 2001-03-28 2005-04-12 International Business Machines Corporation Hyperbga buildup laminate
US7060747B2 (en) * 2001-03-30 2006-06-13 Intel Corporation Chain extension for thermal materials
US7259448B2 (en) * 2001-05-07 2007-08-21 Broadcom Corporation Die-up ball grid array package with a heat spreader and method for making the same
US6491426B1 (en) 2001-06-25 2002-12-10 Sbs Technologies Inc. Thermal bond verification
US7015072B2 (en) 2001-07-11 2006-03-21 Asat Limited Method of manufacturing an enhanced thermal dissipation integrated circuit package
US6734552B2 (en) 2001-07-11 2004-05-11 Asat Limited Enhanced thermal dissipation integrated circuit package
US7182672B2 (en) * 2001-08-02 2007-02-27 Sv Probe Pte. Ltd. Method of probe tip shaping and cleaning
KR100442695B1 (ko) 2001-09-10 2004-08-02 삼성전자주식회사 열 방출판이 부착된 플립칩 패키지 제조 방법
US20030054583A1 (en) * 2001-09-20 2003-03-20 Eastman Kodak Company Method for producing an image sensor assembly
US6627978B2 (en) * 2001-09-28 2003-09-30 Intel Corporation Chip package enabling increased input/output density
US7045890B2 (en) * 2001-09-28 2006-05-16 Intel Corporation Heat spreader and stiffener having a stiffener extension
US6625027B2 (en) 2001-10-31 2003-09-23 Baker Hughes Incorporated Method for increasing the dielectric strength of isolated base integrated circuits used with variable frequency drives
US6879039B2 (en) 2001-12-18 2005-04-12 Broadcom Corporation Ball grid array package substrates and method of making the same
US6751099B2 (en) * 2001-12-20 2004-06-15 Intel Corporation Coated heat spreaders
US20050136640A1 (en) * 2002-01-07 2005-06-23 Chuan Hu Die exhibiting an effective coefficient of thermal expansion equivalent to a substrate mounted thereon, and processes of making same
US6841413B2 (en) 2002-01-07 2005-01-11 Intel Corporation Thinned die integrated circuit package
US6590278B1 (en) 2002-01-08 2003-07-08 International Business Machines Corporation Electronic package
US6861750B2 (en) * 2002-02-01 2005-03-01 Broadcom Corporation Ball grid array package with multiple interposers
US7550845B2 (en) * 2002-02-01 2009-06-23 Broadcom Corporation Ball grid array package with separated stiffener layer
US6825108B2 (en) * 2002-02-01 2004-11-30 Broadcom Corporation Ball grid array package fabrication with IC die support structures
US6876553B2 (en) 2002-03-21 2005-04-05 Broadcom Corporation Enhanced die-up ball grid array package with two substrates
US20030178719A1 (en) * 2002-03-22 2003-09-25 Combs Edward G. Enhanced thermal dissipation integrated circuit package and method of manufacturing enhanced thermal dissipation integrated circuit package
US7196415B2 (en) 2002-03-22 2007-03-27 Broadcom Corporation Low voltage drop and high thermal performance ball grid array package
US6534859B1 (en) * 2002-04-05 2003-03-18 St. Assembly Test Services Ltd. Semiconductor package having heat sink attached to pre-molded cavities and method for creating the package
US6979594B1 (en) 2002-07-19 2005-12-27 Asat Ltd. Process for manufacturing ball grid array package
US6987032B1 (en) 2002-07-19 2006-01-17 Asat Ltd. Ball grid array package and process for manufacturing same
JP3847691B2 (ja) * 2002-09-26 2006-11-22 三菱電機株式会社 電力用半導体装置
US6933598B2 (en) * 2002-10-08 2005-08-23 Chippac, Inc. Semiconductor stacked multi-package module having inverted second package and electrically shielded first package
US7034387B2 (en) * 2003-04-04 2006-04-25 Chippac, Inc. Semiconductor multipackage module including processor and memory package assemblies
WO2005038912A1 (en) * 2002-10-11 2005-04-28 Chien-Min Sung Carbonaceous heat spreader and associated methods
TWI221664B (en) * 2002-11-07 2004-10-01 Via Tech Inc Structure of chip package and process thereof
CN100352324C (zh) * 2002-11-21 2007-11-28 华为技术有限公司 通信设备中具有散热结构的器件进行散热处理的方法
US6867977B2 (en) * 2002-12-30 2005-03-15 Intel Corporation Method and apparatus for protecting thermal interfaces
US6825559B2 (en) 2003-01-02 2004-11-30 Cree, Inc. Group III nitride based flip-chip intergrated circuit and method for fabricating
US20070164424A1 (en) * 2003-04-02 2007-07-19 Nancy Dean Thermal interconnect and interface systems, methods of production and uses thereof
US6965245B2 (en) * 2003-05-01 2005-11-15 K&S Interconnect, Inc. Prefabricated and attached interconnect structure
CN101448382A (zh) * 2003-06-06 2009-06-03 霍尼韦尔国际公司 热互连系统及其制造和使用的方法
KR100541729B1 (ko) * 2003-06-23 2006-01-10 삼성전자주식회사 반도체소자 검사장치
US7144538B2 (en) * 2003-06-26 2006-12-05 Semiconductor Components Industries, Llc Method for making a direct chip attach device and structure
KR100541730B1 (ko) * 2003-06-26 2006-01-10 삼성전자주식회사 반도체소자 검사장치
FR2857502B1 (fr) * 2003-07-10 2006-02-24 Soitec Silicon On Insulator Substrats pour systemes contraints
US20050093181A1 (en) * 2003-11-04 2005-05-05 Brandenburg Scott D. Heat sinkable package
US7180173B2 (en) * 2003-11-20 2007-02-20 Taiwan Semiconductor Manufacturing Co. Ltd. Heat spreader ball grid array (HSBGA) design for low-k integrated circuits (IC)
JP5197961B2 (ja) * 2003-12-17 2013-05-15 スタッツ・チップパック・インコーポレイテッド マルチチップパッケージモジュールおよびその製造方法
US20050133907A1 (en) * 2003-12-23 2005-06-23 Hildner Thomas R. Mechanism for maintaining consistent thermal interface layer in an integrated circuit assembly
US7061101B2 (en) * 2004-03-11 2006-06-13 Mirae Corporation Carrier module
CN1302945C (zh) * 2004-04-09 2007-03-07 李岭群 吊轨永磁双吸平衡补偿式悬浮路－车系统
CN1302944C (zh) * 2004-04-09 2007-03-07 李岭群 暗轨永磁双吸平衡补偿式悬浮路－车系统
CN1302946C (zh) * 2004-04-09 2007-03-07 李岭群 吊轨管道真空永磁双吸平衡补偿式悬浮路－车系统
US20050258527A1 (en) * 2004-05-24 2005-11-24 Chippac, Inc. Adhesive/spacer island structure for multiple die package
US20050269692A1 (en) * 2004-05-24 2005-12-08 Chippac, Inc Stacked semiconductor package having adhesive/spacer structure and insulation
US8552551B2 (en) * 2004-05-24 2013-10-08 Chippac, Inc. Adhesive/spacer island structure for stacking over wire bonded die
US7432586B2 (en) * 2004-06-21 2008-10-07 Broadcom Corporation Apparatus and method for thermal and electromagnetic interference (EMI) shielding enhancement in die-up array packages
US7482686B2 (en) 2004-06-21 2009-01-27 Braodcom Corporation Multipiece apparatus for thermal and electromagnetic interference (EMI) shielding enhancement in die-up array packages and method of making the same
US7411281B2 (en) * 2004-06-21 2008-08-12 Broadcom Corporation Integrated circuit device package having both wire bond and flip-chip interconnections and method of making the same
US7253511B2 (en) * 2004-07-13 2007-08-07 Chippac, Inc. Semiconductor multipackage module including die and inverted land grid array package stacked over ball grid array package
US7138300B2 (en) 2004-09-22 2006-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. Structural design for flip-chip assembly
US7786591B2 (en) * 2004-09-29 2010-08-31 Broadcom Corporation Die down ball grid array package
US7145232B2 (en) * 2004-09-30 2006-12-05 Lsi Logic Corporation Construction to improve thermal performance and reduce die backside warpage
US7743963B1 (en) 2005-03-01 2010-06-29 Amerasia International Technology, Inc. Solderable lid or cover for an electronic circuit
US7166540B2 (en) * 2005-03-03 2007-01-23 Intel Corporation Method for reducing assembly-induced stress in a semiconductor die
US7364945B2 (en) * 2005-03-31 2008-04-29 Stats Chippac Ltd. Method of mounting an integrated circuit package in an encapsulant cavity
US7372141B2 (en) * 2005-03-31 2008-05-13 Stats Chippac Ltd. Semiconductor stacked package assembly having exposed substrate surfaces on upper and lower sides
KR101213661B1 (ko) * 2005-03-31 2012-12-17 스태츠 칩팩, 엘티디. 칩 스케일 패키지 및 제 2 기판을 포함하고 있으며 상부면및 하부면에서 노출된 기판 표면들을 갖는 반도체 어셈블리
KR101175482B1 (ko) * 2005-04-06 2012-08-20 파나소닉 주식회사 플립 칩 실장 방법 및 범프 형성 방법
KR100660604B1 (ko) * 2005-04-21 2006-12-22 (주)웨이브닉스이에스피 금속 박편을 이용한 수동 소자 및 반도체 패키지의제조방법
US7354800B2 (en) 2005-04-29 2008-04-08 Stats Chippac Ltd. Method of fabricating a stacked integrated circuit package system
US7429786B2 (en) * 2005-04-29 2008-09-30 Stats Chippac Ltd. Semiconductor package including second substrate and having exposed substrate surfaces on upper and lower sides
US7582960B2 (en) * 2005-05-05 2009-09-01 Stats Chippac Ltd. Multiple chip package module including die stacked over encapsulated package
US7561436B2 (en) * 2005-06-06 2009-07-14 Delphi Technologies, Inc. Circuit assembly with surface-mount IC package and heat sink
US7394148B2 (en) * 2005-06-20 2008-07-01 Stats Chippac Ltd. Module having stacked chip scale semiconductor packages
US7566591B2 (en) * 2005-08-22 2009-07-28 Broadcom Corporation Method and system for secure heat sink attachment on semiconductor devices with macroscopic uneven surface features
US7543373B2 (en) * 2005-09-26 2009-06-09 International Business Machines Corporation Gel package structural enhancement of compression system board connections
TWI273683B (en) * 2005-11-02 2007-02-11 Siliconware Precision Industries Co Ltd Semiconductor package and substrate structure thereof
US7456088B2 (en) 2006-01-04 2008-11-25 Stats Chippac Ltd. Integrated circuit package system including stacked die
US7768125B2 (en) * 2006-01-04 2010-08-03 Stats Chippac Ltd. Multi-chip package system
US7750482B2 (en) * 2006-02-09 2010-07-06 Stats Chippac Ltd. Integrated circuit package system including zero fillet resin
US8704349B2 (en) * 2006-02-14 2014-04-22 Stats Chippac Ltd. Integrated circuit package system with exposed interconnects
US7176707B1 (en) * 2006-02-23 2007-02-13 Lockheed Martin Corporation Back side component placement and bonding
US9713258B2 (en) * 2006-04-27 2017-07-18 International Business Machines Corporation Integrated circuit chip packaging
US8183680B2 (en) * 2006-05-16 2012-05-22 Broadcom Corporation No-lead IC packages having integrated heat spreader for electromagnetic interference (EMI) shielding and thermal enhancement
JP4589269B2 (ja) * 2006-06-16 2010-12-01 ソニー株式会社 半導体装置およびその製造方法
US7476568B2 (en) * 2006-06-30 2009-01-13 Intel Corporation Wafer-level assembly of heat spreaders for dual IHS packages
KR20080035741A (ko) * 2006-10-20 2008-04-24 삼성전자주식회사 광원 유닛의 제조방법과 광원 유닛을 구비한 백라이트 유닛및 이를 구비한 액정표시장치
DE102007016126A1 (de) * 2007-03-29 2008-10-02 Robert Bosch Gmbh Anordnung mit mindestens einem in Berührungskontakt mit mindestens einem Kunststoffbauelement stehenden Metallteil
JP2008270455A (ja) * 2007-04-19 2008-11-06 Hitachi Ltd パワー半導体モジュール
TWI338938B (en) * 2007-05-11 2011-03-11 Siliconware Precision Industries Co Ltd Heat-dissipating type semiconductor package
US20080307643A1 (en) * 2007-06-15 2008-12-18 Sozansky Wayne A Method of assembly to achieve thermal bondline with minimal lead bending
US7791188B2 (en) 2007-06-18 2010-09-07 Chien-Min Sung Heat spreader having single layer of diamond particles and associated methods
US7982137B2 (en) * 2007-06-27 2011-07-19 Hamilton Sundstrand Corporation Circuit board with an attached die and intermediate interposer
US7678615B2 (en) * 2007-08-29 2010-03-16 Advanced Micro Devices, Inc. Semiconductor device with gel-type thermal interface material
US7833839B1 (en) * 2007-09-15 2010-11-16 Globalfoundries Inc. Method for decreasing surface delamination of gel-type thermal interface material by management of the material cure temperature
KR20090062612A (ko) * 2007-12-13 2009-06-17 페어차일드코리아반도체 주식회사 멀티 칩 패키지
US20090166890A1 (en) * 2007-12-31 2009-07-02 Chrysler Gregory M Flip-chip package
US8013440B2 (en) * 2008-03-28 2011-09-06 Conexant Systems, Inc. Enhanced thermal dissipation ball grid array package
JP4621778B2 (ja) * 2009-01-29 2011-01-26 株式会社東芝 電子機器及び回路基板
JP5169964B2 (ja) * 2009-04-10 2013-03-27 株式会社デンソー モールドパッケージの実装構造および実装方法
US8564114B1 (en) 2010-03-23 2013-10-22 Amkor Technology, Inc. Semiconductor package thermal tape window frame for heat sink attachment
US8778784B2 (en) 2010-09-21 2014-07-15 Ritedia Corporation Stress regulated semiconductor devices and associated methods
TWI464839B (zh) 2010-09-21 2014-12-11 Ritedia Corp 單層鑽石顆粒散熱器及其相關方法
US9006086B2 (en) 2010-09-21 2015-04-14 Chien-Min Sung Stress regulated semiconductor devices and associated methods
US9312240B2 (en) 2011-01-30 2016-04-12 UTAC Headquarters Pte. Ltd. Semiconductor packages and methods of packaging semiconductor devices
US8703534B2 (en) * 2011-01-30 2014-04-22 United Test And Assembly Center Ltd. Semiconductor packages and methods of packaging semiconductor devices
US8552540B2 (en) 2011-05-10 2013-10-08 Conexant Systems, Inc. Wafer level package with thermal pad for higher power dissipation
JP5885690B2 (ja) 2012-04-27 2016-03-15 キヤノン株式会社 電子部品および電子機器
JP2013243340A (ja) 2012-04-27 2013-12-05 Canon Inc 電子部品、実装部材、電子機器およびこれらの製造方法
JP6296687B2 (ja) * 2012-04-27 2018-03-20 キヤノン株式会社 電子部品、電子モジュールおよびこれらの製造方法。
JP5980566B2 (ja) * 2012-05-17 2016-08-31 新光電気工業株式会社 半導体装置及びその製造方法
US20130308274A1 (en) * 2012-05-21 2013-11-21 Triquint Semiconductor, Inc. Thermal spreader having graduated thermal expansion parameters
US10958348B2 (en) * 2012-12-29 2021-03-23 Zephyr Photonics Inc. Method for manufacturing modular multi-function active optical cables
US9304703B1 (en) 2015-04-15 2016-04-05 Symbolic Io Corporation Method and apparatus for dense hyper IO digital retention
US10133636B2 (en) 2013-03-12 2018-11-20 Formulus Black Corporation Data storage and retrieval mediation system and methods for using same
US9817728B2 (en) 2013-02-01 2017-11-14 Symbolic Io Corporation Fast system state cloning
CN103199068B (zh) * 2013-04-11 2016-06-08 余原生 一体化电路集成结构
CN103414356A (zh) * 2013-08-16 2013-11-27 张晓民 共单极悬浮式整流模块
CN103507818A (zh) * 2013-09-09 2014-01-15 李安庆 单轨高速复式机动车驱动桥总成
CN103579017B (zh) * 2013-11-14 2016-04-27 无锡中微高科电子有限公司 用于陶瓷柱栅阵列封装的自动植柱及焊接装置
US9355927B2 (en) * 2013-11-25 2016-05-31 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor packaging and manufacturing method thereof
US9559064B2 (en) * 2013-12-04 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Warpage control in package-on-package structures
US9502269B2 (en) * 2014-04-03 2016-11-22 Bae Systems Information And Electronic Systems Integration Inc. Method and apparatus for cooling electonic components
US10061514B2 (en) 2015-04-15 2018-08-28 Formulus Black Corporation Method and apparatus for dense hyper IO digital retention
US9706662B2 (en) 2015-06-30 2017-07-11 Raytheon Company Adaptive interposer and electronic apparatus
USD742887S1 (en) 2015-07-22 2015-11-10 Symbolic Io Corporation Tray
US9648729B1 (en) 2015-11-20 2017-05-09 Raytheon Company Stress reduction interposer for ceramic no-lead surface mount electronic device
JP7077526B2 (ja) * 2016-12-16 2022-05-31 東洋インキＳｃホールディングス株式会社 複合部材
US10153261B2 (en) * 2017-04-03 2018-12-11 Cisco Technology, Inc. Cooling system for high power application specific integrated circuit with embedded high bandwidth memory
US10572186B2 (en) 2017-12-18 2020-02-25 Formulus Black Corporation Random access memory (RAM)-based computer systems, devices, and methods
US11355419B2 (en) * 2018-01-11 2022-06-07 Amosense Co., Ltd. Power semiconductor module
US10725853B2 (en) 2019-01-02 2020-07-28 Formulus Black Corporation Systems and methods for memory failure prevention, management, and mitigation
EP3937227A1 (en) * 2020-07-09 2022-01-12 Infineon Technologies Austria AG A semiconductor device package comprising a thermal interface material with improved handling properties
JP2022088990A (ja) * 2020-12-03 2022-06-15 新光電気工業株式会社 半導体装置及び半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5249101A (en) * 1992-07-06 1993-09-28 International Business Machines Corporation Chip carrier with protective coating for circuitized surface

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3458925A (en) * 1966-01-20 1969-08-05 Ibm Method of forming solder mounds on substrates
US4000509A (en) * 1975-03-31 1976-12-28 International Business Machines Corporation High density air cooled wafer package having improved thermal dissipation
US4092697A (en) * 1976-12-06 1978-05-30 International Business Machines Corporation Heat transfer mechanism for integrated circuit package
US4604644A (en) * 1985-01-28 1986-08-05 International Business Machines Corporation Solder interconnection structure for joining semiconductor devices to substrates that have improved fatigue life, and process for making
JPS61271319A (ja) * 1985-05-24 1986-12-01 Shin Etsu Chem Co Ltd 半導体封止用エポキシ樹脂組成物
JPS62136865A (ja) * 1985-12-11 1987-06-19 Hitachi Ltd モジユ−ル実装構造
JPH0777247B2 (ja) * 1986-09-17 1995-08-16 富士通株式会社 半導体装置の製造方法
US5159535A (en) * 1987-03-11 1992-10-27 International Business Machines Corporation Method and apparatus for mounting a flexible film semiconductor chip carrier on a circuitized substrate
US4878108A (en) * 1987-06-15 1989-10-31 International Business Machines Corporation Heat dissipation package for integrated circuits
JPS6429158A (en) * 1987-07-24 1989-01-31 Fujitsu Ltd Display device mounting discrimination system
JPH01217951A (ja) * 1988-02-26 1989-08-31 Hitachi Ltd 半導体装置
JPH0756887B2 (ja) * 1988-04-04 1995-06-14 株式会社日立製作所 半導体パッケージ及びそれを用いたコンピュータ
DE3813565A1 (de) * 1988-04-22 1989-11-02 Bosch Gmbh Robert Elektrischer anschluss von hybridbaugruppen
US4914551A (en) * 1988-07-13 1990-04-03 International Business Machines Corporation Electronic package with heat spreader member
JPH02136865A (ja) * 1988-11-18 1990-05-25 Dainippon Ink & Chem Inc 静電荷現像用黄色トナー
JPH0312955A (ja) * 1989-06-12 1991-01-21 Fujitsu Ltd 半導体装置
US5041902A (en) * 1989-12-14 1991-08-20 Motorola, Inc. Molded electronic package with compression structures
US5121190A (en) * 1990-03-14 1992-06-09 International Business Machines Corp. Solder interconnection structure on organic substrates
US5147084A (en) * 1990-07-18 1992-09-15 International Business Machines Corporation Interconnection structure and test method
US5235347A (en) * 1990-09-07 1993-08-10 Hewlett-Packard Company Light emitting diode print head
JPH04192552A (ja) * 1990-11-27 1992-07-10 Nec Corp 半導体素子用パッケージ
US5291064A (en) * 1991-04-16 1994-03-01 Nec Corporation Package structure for semiconductor device having a flexible wiring circuit member spaced from the package casing
US5375320A (en) * 1991-08-13 1994-12-27 Micron Technology, Inc. Method of forming "J" leads on a semiconductor device
JP3000307B2 (ja) * 1991-08-28 2000-01-17 株式会社日立製作所 冷却装置付き半導体装置およびその製造方法
US5198693A (en) * 1992-02-05 1993-03-30 International Business Machines Corporation Aperture formation in aluminum circuit card for enhanced thermal dissipation
US5262927A (en) * 1992-02-07 1993-11-16 Lsi Logic Corporation Partially-molded, PCB chip carrier package
EP0566872A3 (en) * 1992-04-21 1994-05-11 Motorola Inc A thermally enhanced semiconductor device and method for making the same
US5367196A (en) * 1992-09-17 1994-11-22 Olin Corporation Molded plastic semiconductor package including an aluminum alloy heat spreader
US5461257A (en) * 1994-03-31 1995-10-24 Sgs-Thomson Microelectronics, Inc. Integrated circuit package with flat-topped heat sink
MY112145A (en) * 1994-07-11 2001-04-30 Ibm Direct attachment of heat sink attached directly to flip chip using flexible epoxy

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5249101A (en) * 1992-07-06 1993-09-28 International Business Machines Corporation Chip carrier with protective coating for circuitized surface

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