CN1133211C - 制造半导体器件的方法 - Google Patents
制造半导体器件的方法 Download PDFInfo
- Publication number
- CN1133211C CN1133211C CN99102533A CN99102533A CN1133211C CN 1133211 C CN1133211 C CN 1133211C CN 99102533 A CN99102533 A CN 99102533A CN 99102533 A CN99102533 A CN 99102533A CN 1133211 C CN1133211 C CN 1133211C
- Authority
- CN
- China
- Prior art keywords
- cylindrical member
- amorphous silicon
- wall surface
- wall
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP037123/1998 | 1998-02-19 | ||
JP03712398A JP3187364B2 (ja) | 1998-02-19 | 1998-02-19 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1226742A CN1226742A (zh) | 1999-08-25 |
CN1133211C true CN1133211C (zh) | 2003-12-31 |
Family
ID=12488836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN99102533A Expired - Fee Related CN1133211C (zh) | 1998-02-19 | 1999-02-23 | 制造半导体器件的方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6399439B1 (zh) |
JP (1) | JP3187364B2 (zh) |
KR (1) | KR100354275B1 (zh) |
CN (1) | CN1133211C (zh) |
GB (1) | GB2334621B (zh) |
TW (1) | TW444389B (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010008406A (ko) * | 1998-10-29 | 2001-02-05 | 김영환 | 커패시터의 전하저장전극 형성방법 |
JP2000216356A (ja) * | 1999-01-21 | 2000-08-04 | Nec Corp | 半導体装置およびその製造方法 |
US6326277B1 (en) | 1999-08-30 | 2001-12-04 | Micron Technology, Inc. | Methods of forming recessed hemispherical grain silicon capacitor structures |
US6693320B1 (en) * | 1999-08-30 | 2004-02-17 | Micron Technology, Inc. | Capacitor structures with recessed hemispherical grain silicon |
JP3344482B2 (ja) | 1999-10-01 | 2002-11-11 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
KR100345675B1 (ko) * | 1999-12-30 | 2002-07-24 | 주식회사 하이닉스반도체 | 선택적 반구형 실리콘 그레인을 사용한 반도체 소자의전하저장 전극 형성방법 |
KR100319170B1 (ko) * | 1999-12-30 | 2001-12-29 | 박종섭 | 반도체소자의 캐패시터 형성방법 |
KR100338822B1 (ko) * | 1999-12-30 | 2002-05-31 | 박종섭 | 반도체장치의 스토리지노드 전극 제조방법 |
KR100351455B1 (ko) * | 1999-12-31 | 2002-09-09 | 주식회사 하이닉스반도체 | 반도체장치의 스토리지노드 전극 형성방법 |
KR100513808B1 (ko) * | 2000-12-04 | 2005-09-13 | 주식회사 하이닉스반도체 | 캐패시터의 제조 방법 |
KR100398580B1 (ko) * | 2001-02-22 | 2003-09-19 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 제조방법 |
KR100477807B1 (ko) * | 2002-09-17 | 2005-03-22 | 주식회사 하이닉스반도체 | 캐패시터 및 그의 제조 방법 |
KR100507366B1 (ko) * | 2003-01-10 | 2005-08-05 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 형성방법 |
US6887755B2 (en) * | 2003-09-05 | 2005-05-03 | Micron Technology, Inc. | Methods of forming rugged silicon-containing surfaces |
JP3872071B2 (ja) | 2004-05-19 | 2007-01-24 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
JP2006041497A (ja) * | 2004-06-24 | 2006-02-09 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US20070059880A1 (en) * | 2005-09-14 | 2007-03-15 | Li-Fang Yang | Hsg process and process of fabricating large-area electrode |
US9111775B2 (en) | 2011-01-28 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Silicon structure and manufacturing methods thereof and of capacitor including silicon structure |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3336415B2 (ja) | 1993-03-20 | 2002-10-21 | 日本テキサス・インスツルメンツ株式会社 | 半導体装置の製造方法 |
US5278091A (en) | 1993-05-04 | 1994-01-11 | Micron Semiconductor, Inc. | Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node |
US5418180A (en) | 1994-06-14 | 1995-05-23 | Micron Semiconductor, Inc. | Process for fabricating storage capacitor structures using CVD tin on hemispherical grain silicon |
US6638818B1 (en) | 1995-10-06 | 2003-10-28 | Texas Instruments Incorporated | Method of fabricating a dynamic random access memory with increased capacitance |
US6027970A (en) * | 1996-05-17 | 2000-02-22 | Micron Technology, Inc. | Method of increasing capacitance of memory cells incorporating hemispherical grained silicon |
JP2795316B2 (ja) | 1996-05-21 | 1998-09-10 | 日本電気株式会社 | 半導体装置の製造方法 |
US6255159B1 (en) | 1997-07-14 | 2001-07-03 | Micron Technology, Inc. | Method to form hemispherical grained polysilicon |
-
1998
- 1998-02-19 JP JP03712398A patent/JP3187364B2/ja not_active Expired - Fee Related
-
1999
- 1999-02-18 US US09/252,885 patent/US6399439B1/en not_active Expired - Lifetime
- 1999-02-19 KR KR1019990005650A patent/KR100354275B1/ko not_active IP Right Cessation
- 1999-02-19 TW TW088102399A patent/TW444389B/zh not_active IP Right Cessation
- 1999-02-19 GB GB9903875A patent/GB2334621B/en not_active Expired - Fee Related
- 1999-02-23 CN CN99102533A patent/CN1133211C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100354275B1 (ko) | 2002-09-28 |
GB2334621A (en) | 1999-08-25 |
TW444389B (en) | 2001-07-01 |
KR19990072788A (ko) | 1999-09-27 |
CN1226742A (zh) | 1999-08-25 |
GB9903875D0 (en) | 1999-04-14 |
JPH11238857A (ja) | 1999-08-31 |
GB2334621B (en) | 2002-08-21 |
US6399439B1 (en) | 2002-06-04 |
JP3187364B2 (ja) | 2001-07-11 |
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C06 | Publication | ||
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ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030410 |
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Owner name: ELPIDA MEMORY INC. Free format text: FORMER OWNER: NEC ELECTRONICS TAIWAN LTD. Effective date: 20040329 |
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