CN1180477C - 半导体器件和半导体组件 - Google Patents

半导体器件和半导体组件 Download PDF

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Publication number
CN1180477C
CN1180477C CNB011162260A CN01116226A CN1180477C CN 1180477 C CN1180477 C CN 1180477C CN B011162260 A CNB011162260 A CN B011162260A CN 01116226 A CN01116226 A CN 01116226A CN 1180477 C CN1180477 C CN 1180477C
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Prior art keywords
heat sink
pad
sink electrodes
back side
semiconductor device
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CNB011162260A
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CN1347154A (zh
Inventor
坂本则明
小林义幸
阪本纯次
冈田幸夫
五十岚优助
前原荣寿
高桥幸嗣
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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    • HELECTRICITY
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    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
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    • H01L23/3135Double encapsulation or coating and encapsulation
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Abstract

在硬盘中安装贴附有读写放大用IC的FCA。但是,由于读写放大用IC的散热性差,所以该读写放大用IC的温度上升,导致读写速度极大地下降。而且,对硬盘本身的特性会产生极大影响。使散热电极(15)露出在绝缘性树脂(13)的背面,使金属板(23)固定在该散热电极(15)上。该金属板(23)的背面与柔性片背面实质上处于同一个面的位置,可以与第2支撑部件(24)简单地粘合。此外,可使散热电极(15)的表面比焊盘(14)的表面突出,使半导体元件(16)和散热电极(15)之间的间隙变窄。因此,从半导体元件产生的热量可以通过散热电极(15)、金属板(23)、第2支撑部件(24)而良好地释出。

Description

半导体器件和半导体组件
技术领域
本发明涉及半导体器件和半导体组件,具体地涉及可以良好地释放来自半导体元件的热量的结构。
背景技术
近年来,不断地将半导体器件用于便携装置和小型及高密度安装装置,追求其轻薄短小,和散热性。但是,将半导体器件不但安装在各种各样的基板上,作为包括该基板的半导体组件,还安装在各种各样的装置上。该基板有陶瓷基板、印刷基板、柔性片、金属基板或玻璃基板等,这里,将柔性片上安装的半导体组件作为一例进行说明。再有,就本实施案例的形态而言,不言而喻,可以采用其它基板。
图17表示将使用柔性片的半导体组件安装在硬盘100上的情况。例如,日经电子学1997年6月16日(No.691)从P92起就曾详细描述过该硬盘100。
该硬盘100被安装在金属构成的箱体101上,将多片记录盘102一体地装在主轴电机103上,在各个记录盘102的表面上,磁头104与之有微小的间隙,以此进行配置。将该磁头104安装在悬臂106的前端,而悬臂106又固定在臂105的前端上。而且,磁头104与悬臂106、臂105连成一体,将该一体物装在致动器107上。
记录盘102通过该磁头104进行写入、读出,所以必须与作读写放大之用的IC108进行电连接。因此,使用安装有该读写放大用IC108且置于柔性片109上的半导体组件110,将柔性片109上设置的布线最终与磁头104进行电连接。将该半导体组件110称为柔性电路组件,一般简称为FCA。
然后,在箱体101的内面,装在半导体组件110上的连接器111为露出状态,将该连接器(阳模或阴模)111与装在主板112上的连接器(阴模或阳模)连接起来。此外,在该主板112上设有布线,且安装有主轴电机103的驱动IC、缓冲存储器、用于其它驱动的IC例如ASIC等。
例如,记录盘102通过主轴电机103以4500rpm进行旋转,磁头104通过致动器107来决定其位置。该旋转机构用箱体101中设置的盖子来密封,必定有热量密闭在其内,使读写放大用IC108温度上升。因此,应将读写放大用IC108安装在致动器107、箱体101等热传导良好的部分。此外,主轴电机的旋转有5400、7200、10000rpm的高速倾向,所以散热变得日益重要。
为了进一步说明上述的FCA,图18示出其结构。图18A是其平面图;图18B是剖面图,是用A-A线剖切在前端设置的读写放大用IC108的部分。该FCA110被弯曲并安装在箱体101内的一部分上,所以采用弯曲加工容易的平面形状的第一柔性片109。
在该FCA110的左端装有连接器111,作为第1连接部。与该连接器111电连接的第1布线121贴合在第1柔性片109上并延伸到右端。并且,所述第1布线121与读写放大用IC108进行电连接。此外,与磁头104连接的放大用IC108的引线122与第2布线123连接,该第2布线123与臂105、悬臂106上设置的第2柔性片124上的的第3布线126进行电连接。即,第1柔性片109的右端成为第2连接部127,在这里与第2柔性片124进行连接。再有,第1柔性片109和第2柔性片124也可以被一体设置。这种情况下,第2布线123和第3布线126即被一体设置。
此外,在设置读写放大用IC108的第1柔性片109的背面设有支撑部件128。该支撑部件128使用陶瓷基板、Al基板。通过该支撑部件128,与箱体101内部露出的金属进行热耦合,将读写放大用IC108的热量释放到外部。
接着,参照图18B说明读写放大用IC108和第1柔性片109的连接结构。
该柔性片109从下层起依次层叠第1聚酰亚胺片130(以下称为第1PI片)、第1粘结层131、导电图形132、第2粘结层133和第2聚酰亚胺片134(以下称为第2PI片),在第1、第2PI片内夹入导电图形132。
此外,为了连接读写放大用IC108,除去连接部的第2PI片134和第2粘结层133,形成开口部135,在该处露出导电图形132。然后,如图所示,通过引线122与读写放大用IC108进行电连接。
发明内容
在图18B中,用绝缘性树脂136封装的半导体器件藉箭头所示的散热路径向外部释放热量,特别是因绝缘性树脂136有热阻,总体来看,难以将读写放大用IC108产生的热量高效地释放到外部。
再以硬盘来说明。要求该硬盘的读写传送速率为500MHz~1GHz、或更高的频率,所以读写放大用IC108的读写速度必须达到高速。因此,必须将与读写放大用IC108连接的柔性片上的布线路径进行短路,以防止读写放大IC108的温度上升。
尤其因为记录盘102高速旋转,并且箱体101和盖子成为密封的空间,所以内部温度上升到70度~80度左右。另一方面,一般的IC其容许工作温度约为125度,读写放大用IC108从内部温度80度起算允许温升约45度。但是,如图所示,如果半导体器件本身的热阻和FCA的热阻很大,则读写放大用IC108可能立即超过容许工作温度,不能完全发挥原来的能力。因此,应寻求散热性良好的半导体器件和FCA。
而且,工作频率今后会更高,所以读写放大用IC108本身也因运算处理而发热,存在温度上升的问题。尽管常温下可以实现目标的工作频率,但在硬盘内部,由于温度上升,必然使工作频率下降。
以上,随着今后工作频率的增加,对于半导体器件、半导体组件(FCA)正在寻求更好的散热性。
另一方面,致动器107本身或在其上安装的臂105、悬臂106和磁头104为了减小转动惯量,必须尽量轻。特别是如图17所示,在将读写放大用IC108安装在致动器107表面的情况下,也寻求该IC108的轻量化以及FCA110的轻量化。本发明鉴于上述课题而完成,第1,作为一种半导体器件,将半导体元件用倒装法与绝缘性树脂封装成一个整体,在其下面,露出与所述半导体元件的键合电极进行电连接的焊盘和位于所述半导体元件表面的散热电极,
其中,所述散热电极的上表面比所述焊盘的上表面突出,按该突出量来实际决定连接所述键合电极和所述焊盘的连接部件的厚度。
作为连接焊盘和键合电极的部件,有Au凸点或焊球。Au凸点系Au团至少呈一个台阶状所形成,其厚度为,按一个台阶计40μm左右,按两个台阶计为70~80μm。一般来说,散热电极表面和焊盘表面的高度是一致的,所以半导体元件和散热电极之间的间隙由凸点的厚度来决定。因此,不能使上述间隙变窄。但是,与焊盘的表面相比,如果散热电极的表面突出一个约为实际凸点的厚度的量,就可以使该间隙变窄。
此外,焊锡凸点、焊球的厚度为50~70μm左右,出于同样的考虑,可以使间隙变窄。而且,由于焊锡等焊料的厚度与焊盘的浸润性良好,熔融时从焊盘的表面扩大,其厚度因而变薄。但是,键合电极和焊盘之间的间隙由散热电极的突出量来决定,所以焊料的厚度由该突出量来决定。因此,仅仅靠焊料厚度加厚的部份,就可以分散施加在焊锡上的应力,抑制由热循环造成的退化。
第2,所述连接部件是Au凸点、焊锡等的焊料组成的凸点或焊球。
第3,在所述散热电极的露出部上设置比所述焊盘的背面突出的金属板。
该突出的金属板可以位于作为第1支撑部件的柔性片背面和表面位置,有将金属板粘结或对接在框体的内部、特别是有平面的部分以及散热板等上的结构。因此,可将半导体器件的热量传递到散热板上。
第4,将所述焊盘的背面和所述散热电极的背面配置在实际的同一平面上。
第5,所述半导体元件和所述散热电极用绝缘材料来粘合。
第6,所述散热电极和所述金属板用绝缘材料或导电材料来粘合。
第7,所述散热电极和所述金属板用相同材料一体形成。
第8,所述绝缘材料的背面比所述焊盘的背面突出。
在焊盘的背面形成焊锡等焊料的情况下,根据该突出量,可以决定焊锡的厚度。此外,还可以防止延伸到半导体器件背面的导电图形的短路。
第9,所述焊盘的侧面和从所述焊盘侧面延伸的所述绝缘材料的背面构成同一曲面。
半导体器件背面露出的绝缘性树脂在刻蚀时成为曲面,与面接触相比,变为近似于点接触的形状。因此,半导体器件背面的摩擦阻力减小,自对准变得容易。此外,绝缘性树脂的背面是平面,与突出的结构相比,可以确保焊料的多余部分不致漫溢。因此,可以防止相邻焊料之间的短路。
第10,作为一种半导体组件,包括:
第1支撑部件,其上设有导电图形;
半导体器件,该半导体器件将与所述导电图形进行电连接的半导体元件按倒装法与绝缘性树脂封装成一整体,在其下面,露出与所述半导体元件的键合电极进行电连接的焊盘和位于所述半导体元件表面的散热电极;
其中,所述半导体元件和所述散热电极用绝缘材料来粘合,所述散热电极的上表面比所述焊盘的上表面突出,按该突出量实际决定连接所述键合电极和所述焊盘的连接部件的厚度;
将所述第1支撑部件上设置的导电图形和所述焊盘进行电连接,在与所述散热电极对应的所述第1支撑部件上设有开口部,在所述开口部中设有与所述散热电极粘合的金属板。
在半导体元件和散热电极之间,可以形成确保导热性的间隙,而且,与散热电极热耦合的金属板可以与第1支撑部件下设置的散热基板对接。
第11,在所述第1支撑部件的背面,在所述开口部的对应位置贴附有第2支撑部件,使贴合在所述第2支撑部件上的金属板和所述散热电极粘合起来。
第12,所述散热电极和所述金属板用相同材料一体形成。
如图13、图14所示,通过刻蚀导电箔,可以使金属板和散热电极成为一体,完全不需要对金属板进行贴附。
第13,在所述金属板对应的所述第2支撑部件上设有由导电材料组成的粘合板,将所述粘合板和所述金属板进行热耦合。
第14,所述金属板以Cu为主要材料,所述第2支撑部件以Al为主要材料,所述粘合板由在所述第2支撑部件上形成的以Cu为主要材料的镀膜构成。
第2使支撑部件和粘合板之间的热阻大幅度地减少,可以防止半导体元件的温度上升。
第15,所述绝缘材料的背面比所述焊盘的背面突出。
第16,所述焊盘的侧面和从所述焊盘侧面延伸的所述绝缘材料的背面构成同一曲面。
第17,所述半导体元件是硬盘的读写放大用IC。
第18,作为一种半导体器件,将半导体元件按倒装法与绝缘性树脂封装成一整体,在其下面,露出与所述半导体元件的键合电极进行电连接的焊盘、通过与所述焊盘一体的布线而延伸的外部连接电极、以及在所述半导体元件的表面配置的散热电极,
其中,所述散热电极的上表面比所述焊盘的上表面突出,按该突出量来实际决定连接所述键合电极和所述焊盘的连接部件的厚度。
第19,所述连接部件是Au凸点、焊锡等的焊料组成的凸点或焊球。
第20,在所述散热电极的露出部上设置比所述外部连接电极的背面突出的金属板。
第21,将所述外部连接电极的背面和所述散热电极的背面配置在实际的同一平面上。
第22,所述半导体元件和所述散热电极用绝缘材料来粘合。
第23,所述散热电极和所述金属板用绝缘材料或导电材料来粘合。
第24,所述散热电极和所述金属板用相同材料一体形成。
第25,所述绝缘材料的背面比所述外部连接电极的背面突出。
第26,所述外部连接电极的侧面和从所述外部连接电极侧面延伸的所述绝缘材料的背面构成同一曲面。
第27,作为一种半导体组件,包括:
第一支撑部件,其上设有导电图形;
半导体器件,与所述导电图形进行电连接的半导体元件按倒装法与绝缘性树脂封装成一整体,在其下面,露出与所述半导体元件的键合电极进行电连接的焊盘、通过设置与所述焊盘一体的布线的外部连接电极、以及位于所述半导体元件表面的散热电极;其中:
所述半导体元件和所述散热电极用绝缘材料来粘合,
所述散热电极的上表面比所述焊盘的上表面突出,按该突出量来实际决定连接所述键合电极和所述焊盘的连接部件的厚度;
所述第一支撑部件上设置的导电图形与所述外部连接电极进行电连接,在所述散热电极对应的所述第一支撑部件上设有开口部,在所述开口部中设有与所述散热电极粘合的金属板。
第28,在所述第一支撑部件的背面上贴附已粘合有所述金属板的第2支撑部件。
第29,所述散热电极和所述金属板由同一材料一体形成。
第30,在所述金属板对应的所述第2支撑部件中设有由导电材料组成的粘合板,所述粘合板与所述金属板进行热耦合。
第31,所述金属板以Cu作为主要材料,所述第2支撑部件以Al为主要材料,所述粘合板由在所述第2支撑部件上形成的Cu为主要材料的镀膜组成。
第32,所述绝缘性粘结部件的背面比所述外部连接电极的背面突出。
第33,所述外部连接电极的侧面和与所述外部连接电极粘结的绝缘性粘结部件的背面构成同一曲面。
第34,所述半导体元件是硬盘的读写放大用IC。
附图说明
图1是说明本发明的半导体组件的图。
图2是说明本发明的半导体器件的图。
图3是说明本发明的半导体器件的图。
图4是说明本发明的半导体器件的制造方法的图。
图5是说明本发明的半导体器件的制造方法的图。
图6是说明本发明的半导体器件的制造方法的图。
图7是说明本发明的半导体器件的制造方法的图。
图8是说明本发明的半导体器件的制造方法的图。
图9是说明本发明的半导体器件的图。
图10是说明导电图形中形成的溢流防止膜的图。
图11是说明本发明的半导体组件的图。
图12是说明本发明的半导体器件的制造方法的图。
图13是说明本发明的半导体器件的制造方法的图。
图14是说明本发明的半导体器件的制造方法的图。
图15是说明本发明的半导体器件的图。
图16是说明半导体元件和焊盘之间连接结构的图。
图17是说明硬盘的图。
图18是说明图17中采用的现有的半导体组件的图。
[符号说明]
10    半导体器件
11    第一支撑部件
12    第一开口部
14    焊盘
16    半导体元件
23    金属板
24    第二支撑部件
56    第二开口部
具体实施方式
本发明提供散热性好且轻薄短小的半导体器件,并且提供装有该半导体器件的半导体组件,例如在柔性片上安装的半导体组件(以下称为FCA),实现了装有该FCA的装置、例如硬盘特性的改善。
首先,作为装有FCA的装置的一例,参照图17的硬盘100,图1示出了FCA。此外,图2~图16示出了装在该FCA上的半导体器件或其制造方法。
说明装有FCA的装置的第1实施形态
作为该装置,再次说明曾在现有技术栏中说明过的图17的硬盘100。
硬盘100由于是被安装在计算机等里面的,根据需要可被安装在主板112上。该主板112安装有阴模(或阳模)的连接器。然后,将FCA上安装的从箱体101的内面露出的阳模(或阴模)的连接器111和所述主板112上的连接器进行连接。此外,在箱体101中,作为记录媒体的记录盘102应视其容量而层叠多片。磁头104按20~30nm左右的间隔浮置在记录盘102上,并进行扫描,所以与记录盘102之间的间隔以该扫描不发生问题的间隔来设定。然后,在保持该间隔的情况下安装主轴电机103。再有,该主轴电机103被安装在供安装用的基板上,安装基板的背面配置的连接器从箱体101的背面露出。然后,也将该连接器与主板112的连接器进行连接。因此,在主板112上,安装有驱动磁头104的读写放大用IC108、驱动主轴电机103的IC、驱动致动器的IC、暂时保存数据的缓冲存储器、实现制造商独自驱动的ASIC等。当然,也可以安装其他的无源元件和有源元件。
然后,考虑尽量缩短将磁头104和读写放大用IC108连结起来的布线,将读写放大用IC108配置在致动器107上。但是,至此说明的本发明的半导体器件非常薄并且很轻,所以除了可安装在致动器以外,也可以安装在臂105或悬臂106上。这种情况下,如图1B所示,半导体器件10的背面从第1支撑部件11的开口部12露出,半导体器件10的背面与臂105或悬臂106进行热耦合,半导体器件10的热量通过臂105、箱体101释放到外部。
如图17那样,在安装在致动器107上的情况下,读写放大用IC108系在一个芯片上集成各磁道读写电路,使得多个磁传感器可进行读写。但是,每个该浮臂106上安装的磁头104的专用读写电略也可以被安装在各自的悬臂上。如果是这样,与图18的结构相比,可以极大地缩短磁头104和读写放大用IC108之间的布线距离,能够降低该部分阻抗,可以提高读写速度。再有,由于选择硬盘作为装置,所以选择柔性片作为第1支撑部件,但视装置的不同,第1支撑部件也可以是印刷电路板、陶瓷基板、玻璃基板。
说明半导体器件的第2实施形态
首先,参照图2说明本发明的半导体器件。再有,图2A是半导体器件的平面图,图2B是A-A线的剖面图。此外,图2C是说明使散热电极15向上突出理由的图。
在图2中,将以下的结构要件埋入绝缘性树脂13内。即,埋入焊盘14、在包围该焊盘14的区域中设置的散热电极15、以及在该散热电极15上设置的半导体元件16。再有,将半导体元件16按倒装法安装,通过绝缘性粘结部件17与所述散热电极15粘合,考虑到粘结性,此处应一分为四。通过该一分为四形成的隔离沟槽用符号18A来表示。此外,在半导体元件16和散热电极15之间的间隙狭窄而绝缘性粘结部件17难以浸入的情况下,像沟槽18B那样,也可以在散热电极15的表面上形成比所述分离沟槽18A要浅的沟槽18B。
此外,半导体元件16的键合电极19和焊盘14通过焊锡等焊料20进行电连接。再有,也可以使用Au的柱式凸点以代替焊锡。
再有,该连接还有其它方法。例如,也可以将凸点附着在半导体元件的键合电极19上,通过超声波或压焊来连接该凸点。此外,在被压焊的凸点的周围,也可以设置焊锡、导电膏、各向异性导电颗粒。在本发明实施形态栏的最后,用图16来详述这些结构。
此外,焊盘14的背面从绝缘性树脂13中露出,原样成为外部连接电极,而焊盘14的侧面按非各向异性法来刻蚀,这里有通过湿法刻蚀形成的弯曲结构,通过该弯曲结构来产生锚泊效应。
本结构由半导体元件16、多个导电图形14、散热电极15、绝缘性粘结部件17、埋入它们的绝缘性树脂13的5种材料构成。此外,在半导体元件16的配置区域,在散热电极15上,在焊盘14上和各焊盘之间,形成所述绝缘性粘结部件17,特别是在通过刻蚀形成的隔离沟槽18中设置所述绝缘性粘结部件17,使绝缘性粘结部件的背面从半导体器件10A的背面露出。此外,包含它们的全部用绝缘性树脂13密封起来。然后,通过绝缘性树脂13、绝缘性粘结部件17来支撑所述焊盘14、散热电极15、半导体元件16。
作为绝缘性粘结部件17,最好是由绝缘材料构成的粘结剂,或是底填材料。在粘结剂的情况下,最好使用Au凸点代替焊锡20,预先涂敷在半导体元件16的表面上,使之在与焊盘14连接时进行粘合。此外,底填材料17在连接焊锡20(或凸点)和焊盘14后也可以渗透到其间隙中去。
作为绝缘性树脂,可以使用环氧树脂等热固化性树脂、聚酰亚胺树脂、聚苯硫醚等热可塑性树脂。
此外,如果绝缘性树脂13是使用金属模固化的树脂,以及通过浸溃、涂敷法进行覆盖的树脂,则可以采用所有树脂。此外,作为导电图形14,可以使用以Cu为主要材料的导电箔,以Al为主要材料的导电箔、或Fe-Ni合金、Al-Cu的叠层体、Al-Cu-Al的叠层体等。当然,也可以是其它导电材料,最好是可进行刻蚀的导电材料、通过激光使之蒸发的导电材料。此外,考虑到半刻蚀性、镀层的易形成性、热应力,也可以是以压延形成的Cu为主材料的导电材料。
在本发明中,绝缘性树脂13和绝缘性粘结部件17也被填充到所述隔离沟槽18中,所以具有可以防止导电图形脱落的特征。此外,作为刻蚀,可采用干法刻蚀或湿法刻蚀以实施非各向异性刻蚀,将焊盘14的侧面形成弯曲结构,也可以产生锚泊效应。其结果,可以实现焊盘14、散热电极15不从绝缘性树脂13中脱落的结构。
而且,散热电极15的背面在封装的背面露出。因此,散热电极15的背面形成了与后面说明的金属板23、第2支撑部件24或在第2支撑部件24上形成的粘合板25可以对接或粘合的结构。因此,通过该结构,可以使半导体元件16产生的热量散发出去,防止半导体元件16的温度上升,增大该部分半导体元件16的驱动电流或驱动频率。
作为密封树脂的绝缘性树脂13能支撑焊盘14、散热电极15,所以本半导体器件10A不需要支撑基板。该结构是本发明的特征。现有的半导体器件的导电路径由支撑基板(柔性片、印刷电路板或陶瓷基板)支撑,并且用引线框架支撑,所以要附加原本可以省略的良好的构件。但是,本电路器件仅由必要的最小限度的结构要素构成,不需要支撑基板,所以具有薄型、重量轻而且可以压低材料费的廉价特征。因此,如第1实施形态中说明的那样,也可以安装在硬盘的臂和悬臂上。
此外,封装的背面露出焊盘14、散热电极15。如果在该区域中覆盖诸如焊锡等焊料,则散热电极15的面积扩大,因焊料膜厚有差异而受到浸润。因此,要在半导体器件10A的背面形成绝缘覆盖膜26,使之与焊料的膜厚均一。图2A所示的虚线27表示从绝缘覆盖膜26露出的露出部分,这里,焊盘14的背面呈矩形露出,所以与之相同的尺寸从绝缘覆盖膜26露出。
因此,焊料的浸润部分实质为相同尺寸,所以这里形成的焊料厚度实质上是相同的。这在焊锡印刷后、即使回流后也一样。此外,可以说,即使用Au、Ag-Pd等导电膏也一样。通过该结构,可以高精度地计算金属板23的背面比焊盘14的背面突出多少。
此外,将金属板23和导电图形32设定为同一面,可以对焊盘14和散热电极15双方一次施加焊锡。
此外,考虑到半导体元件的散热性,散热电极15形成的露出部27也可以比焊盘14的露出尺寸大。
此外,通过设置绝缘覆盖膜26,可以将第1支撑部件11上设置的导电图形32延伸到本半导体器件10A的背面。一般来说,为了防止短路,将第1支撑部件11侧设置的导电图形32迂回配置在所述半导体器件10A的粘合区域,但通过形成所述绝缘覆盖膜26,即可不必以迂回的方式配置导电图形。而且,绝缘性树脂13、绝缘性粘结部件17比导电图形凸出,所以在半导体器件10A背面设置的焊锡SD不会各自短路。
而且,本发明具有使散热电极15的表面比焊盘14的表面突出的特征。
作为连接焊盘14和键合电极19的手段,有Au凸点和焊球。Au凸点系Au团至少呈一个台阶状所形成,其厚度为,按一个台阶计为40μm左右,按两个台阶计为70~80μm。一般而言,如图2所示,散热电极15的表面和焊盘14的表面高度一致,所以半导体元件16和散热电极15之间的间隙d实际上按凸点的厚度来决定。因此,在图2C的情况下,不能将所述间隙d变窄,不能藉该间隙而降低所产生的热阻。但是,如图2B所示,只要使散热电极15的表面比焊盘14的表面突出一个实际上约为凸点厚度的量,就可以将该间隙d变窄,可以使半导体元件16和散热电极15之间的热阻下降。
此外,焊点、焊球的厚度为50~70μm左右,按照同样的考虑,可以将间隙d变窄。而且,焊锡等的焊料与焊盘之间的浸润性良好,所以熔融时在焊盘的整个区域扩展,其厚度变薄。但是,键合电极19和焊盘14之间的间隙按散热电极15的突出量来决定,所以焊料的厚度按该突出量来决定,可以防止所述焊锡的漫流。因此,仅将焊料的厚度加厚,就可以分散施加到焊锡的应力,可以抑制热循环造成的退化。此外,通过调整该突出量,还可以使清冼液浸入该间隙。
再有,该散热电极15的突出结构可以应用于下述所有的实施形态。
说明半导体器件10B的第3实施形态
图3表示本半导体器件10B。图3A是其平面图,图3B是A-A线处的剖面图。再有,由于与图2的结构类似,所以这里仅说明不同的部分。
在图2中,焊盘14的背面原本具有外部连接电极21的功能,但在本实施形态的案例中,在焊盘14上有一体形成的布线30、与布线30一体形成的外部连接电极31。
再有,虚线所示的矩形是半导体元件16,在半导体元件16的背面配置所述外部连接电极31,将外部连接电极31配置成如图所示的环状。该配置具有与众所周知的BGA相同或类似的结构。此外,布线也可以为波纹状,以减缓应力。
此外,如果将半导体元件16原封不动地配置在导电图形14、30、31和散热电极15上,则有可能两者通过半导体元件16的背面而产生短路。因此,绝缘性粘结部件17应该仅采用绝缘材料,而不能使用导电材料。
此外,将图1的第1支撑部件11的导电图形32与外部连接电极31连接,焊盘14的背面、布线30的背面被绝缘覆盖膜26所覆盖。在外部连接电极31上虚线所示的圈印、散热电极15上所示虚线的○印是从绝缘覆盖膜26露出的部分。
而且,散热电极15的外部连接电极31延伸到半导体元件16的背面,所以该部分比图2的散热电极15小。此外,绝缘性粘结部件17覆盖散热电极15、外部连接电极31和布线30。而且,绝缘性树脂13与绝缘性粘结部件成为一体,最终覆盖焊盘14、布线30、半导体元件16。
本实施形态的焊盘14的数目非常多,在要减小其尺寸的情况下,可以通过布线作为外部连接电极进行再配置,具有可以增大外部连接电极31的尺寸的优点。此外,通过设置布线,可以减缓施加于键合部上的应力。最好形成波纹状。而且,使具有本发明特征的散热电极15的表面突出,具有可以确保焊锡20的厚度的特征。因此,通过设置布线,通过加厚焊锡的厚度,可以提高半导体元件16和焊盘14之间的连接可靠性。
此外,半导体元件16和散热电极15用绝缘性粘结部件17来粘合,由于是绝缘材料,所以存在其热阻问题。但是,如果用掺入硅氧化物或氧化铝等有助于热传导的填充物的硅酮树脂来构成绝缘性粘结部件,则半导体元件16的热量可以良好地传导到散热电极15。
此外,散热电极15和半导体元件16之间的间隔可以通过使所述填充物的直径统一而均匀地形成。因此,在考虑到热传导而形成微小间隙的情况下,绝缘性粘结部件在软化状态时就要轻轻挤压半导体元件16,并原样固化,如此可形成该间隙。这里,使用直径10μm的氧化铝的填充物,所以半导体元件16和散热电极15之间的间隙实际保持在10μm。
说明半导体器件10A、10B的制造方法的第4实施形态
与焊盘14、散热电极15所构成的图2的图形相比、本制造方法追加了布线30、外部连接电极31,由此构成的图3的图形与图2仅此不同外,两者实质上是相同的。无论哪一个,都采用半刻蚀法将所述图形形成凸状,所以这里使用图3的半导体器件10B来说明其制造方法。再有,从图4到图9是对应于图3A-A线剖面图。
首先,准备图4那样的导电箔40。厚度最好为10μm~300μm左右,这里采用70μm的压延铜箔。接着,在该导电箔40的表面上形成作为耐刻蚀掩模的导电覆盖膜41或光致抗蚀剂。再有,该图形是与图3A的散热电极15相同的图形。
接着,通过所述导电覆盖膜41或光致抗蚀剂对导电箔40进行半刻蚀。刻蚀深度比导电箔40的厚度浅,实际半刻蚀至焊锡20(或凸点)的厚度左右。
然后,通过半刻蚀,使散热电极15以凸状呈现在导电箔40的表面上(以上参照图4)。
接着,在对应于焊盘14、布线30、外部连接电极31、散热电极15的部分形成耐刻蚀掩模PR,并再次进行半刻蚀。再有,对应于散热电极15的耐刻蚀掩模有PR1、PR2两种类型的形成方法,由此,散热电极15的侧面形状有一些不同。再有,作为导电覆盖膜,如果选择Ni之类的刻蚀速率慢的材料,则形成边檐,可发生锚泊效应。
此外,在耐刻蚀掩模的下层,至少在对应于焊盘的部分形成Au、Ag、Pd或Ni等导电覆盖膜。这是为使之能够形成键合而设置的。
接着,通过耐刻蚀掩模PR对导电箔40进行半刻蚀。刻蚀深度最好比剩余的导电箔40的厚度浅。再有,刻蚀的深度越浅,就越可能形成微细图形。
然后,通过半刻蚀,使焊盘14、布线30、外部连接电极31以凸状呈现,在前述工序中半刻蚀的散热电极15比焊盘14、布线30、外部连接电极31更突出(参照图5)。
再有,导电箔40系采用以压延形成的Cu为主要材料的Cu箔。压延的铜箔有优越的耐弯曲性。但是,由Al构成的导电箔、Fe-Ni合金构成导电箔、Cu-Al的叠层体、Al-Cu-Al或Cu-Al-Cu的叠层体也可以。特别是Al-Cu-Al叠层体可以防止热膨胀系数之差产生的翘曲。
然后,在图3的矩形的虚线的对应部分设有绝缘性粘结部件17。该绝缘性粘结部件17被设置在散热电极15和外部连接电极31的隔离沟槽22、散热电极15和布线30之间的隔离沟槽、布线30之间的隔离沟槽和这些隔离沟槽之上。
接着,在设有绝缘性粘结部件17的区域粘合半导体元件16,将半导体元件16的键合电极19和焊盘14进行电连接。在图中,半导体元件16按倒装法安装,所以采用焊锡SD1或图16的凸点作为连接部件。
其中,使散热电极15的表面比焊盘14的表面突出一个d的量具有重要的意义。
Au凸点系Au团至少呈一个台阶状所形成,其厚度为,按一个台阶计为40μm左右,按两个台阶计为70~80μm的厚度。因此,只要使散热电极15的表面比焊盘14的表面实际仅突出约为凸点厚度的量,就可以使该间隙d变窄。
此外,焊锡凸点、焊球的厚度为50~70μm左右,按照同样的考虑,可以使间隙变窄。而且,焊锡等焊料与焊盘的浸润性良好,所以熔融时从焊盘的表面扩展,其厚度变薄。但是,键合电极和焊盘之间的间隙按散热电极的突出量来决定,所以焊料的厚度按该突出量来决定,焊锡的扩展也得到抑制。因此,仅加厚焊料的厚度,就可以分散施加于焊锡上的应力,可以抑制热循环造成的退化。
就该键合而言,焊盘14与导电箔40是一体的,而且导电箔40的背面是平坦的,所以在键合机器的平台上形成表面对接。因此,如果导电箔40被完全固定在键合平台上,则所有的焊盘14和半导体元件16上形成的焊球被完全对接,可在没有焊接不良的情况下粘合。此外,键合平台的固定例如可以在平台整个面上设置多个真空吸孔来实现。再有,连接方法还有其它方法,就该结构而言,最后可参照图16进行说明。
此外,在不采用支撑基板以及用焊球代替金属细线的情况下,可将半导体元件16的高度配置得低一些,低出的部份即为上述差值。由此可以减薄后述的封装外形的厚度。
此外,作为绝缘性粘结部件17,在使用底填材料的情况下,粘接半导体元件16和焊盘14,然后使底填材料浸透(以上参照图6)。
然后,在包括半导体元件16的整个区域上形成绝缘性树脂13。绝缘性树脂可以是可热塑性和热固化性树脂中的任意一种。
此外,可以通过转移模铸、注封模铸、浸渍或涂敷来实现。作为树脂材料,环氧树脂等热固化性树脂可以用转移模铸来实现,液晶聚合物、聚苯硫醚等热可塑性树脂可以用注封模铸来实现。
在本实施形态中,调整绝缘性树脂的厚度,使得从半导体元件的背面上约100μm被绝缘性树脂覆盖。考虑到半导体器件的强度,该厚度可以加厚,也可以减薄。此外,如图14B那样,可使半导体元件16的背面露出。在这种情况下,安装散热片,可以直接将半导体元件的热量释放到外部。
再有,对于树脂注入而言,焊盘14、布线30、外部连接电极31和散热电极15与片状导电箔40为一体,所以没有限定导电箔40的偏差,完全没有这些铜箔图形的位置偏差。而且,与引线框架不同,这些导电图形之间完全不产生树脂毛刺。
以上,在绝缘性树脂13中,埋入以凸点形式所形成的焊盘14、布线30、外部连接电极31、散热电极15、半导体元件16,与凸点相比,下方的导电箔40从背面露出(以上参见图7)。
接着,除去所述绝缘性树脂13的背面露出的导电箔40,逐一分离为焊盘14、布线30、外部连接电极31、散热电极15。
这里的分离工艺有各种方法,可以通过刻蚀背面的去除法进行分离,也可以通过研磨或磨削的切削法进行分离。此外,也可以两者并用。例如,一旦不断切削直至露出绝缘性树脂13时,导电箔40的切削末和外侧的细长毛刺状金属,即可啮入绝缘性树脂13或绝缘性粘结部件17,这些都是问题。因此,如果通过刻蚀进行分离,则位于Cu的图形之间的绝缘性树脂13或绝缘性粘结部件17的表面可以不形成导电箔40的金属啮蚀的现象。由此,可以防止微细间隔的图形之间的短路。
此外,形成半导体器件10B的1个单元有多个的情况下,在该分离工艺后,应增加切割工艺。
此处,采用切割装置逐一分离,但也可以采取巧克力式开裂法还可以采用按压法或切割法。
此处,在分离Cu的图形后,在分离区的背面露出的图形14、30、31、15上形成缘覆盖膜26,采取使图3A的虚线圆圈所示的部分露出的方法对绝缘覆盖膜进行构图。然后,在箭头所示的部分切出被分割的半导体器件10B。
再有,焊锡42在切割前或切割后形成都可以。
按照以上的制造方法,将焊盘、布线、外部连接电极、散热电极、半导体元件埋入绝缘性树脂,可以实现轻薄短小且散热性良好的封装。
再有,如图9所示,也可以不使用绝缘性树脂13,而使用绝缘性粘结部件17来密封。此外,图10所示的图形PTN表示焊盘、布线、外部连接电极,在其上阴影线所示的部分表示焊锡溢流防止膜的形成图形。在防止焊锡溢流的同时,还覆盖其它区域,以提高绝缘性粘结部件的密附性。作为各种类型,由A~E示出,但也可以采用除此以外的图形。此外,除了焊锡的连接部以外,也可以在整个导电箔上形成溢流防止膜。
下面,说明由以上制造方法产生的效果。
首先,第一,导电图形被半刻蚀,与导电箔成为一体得到支撑,所以不需要现有用于支撑的基板。
第二,对导电箔进行半刻蚀,形成变为凸点的导电图形,所以可以使该导电图形微细化。因此,可以将宽度、间隔变窄,可以形成平面尺寸更小的封装。
第三,由于是由导电图形、半导体元件、连接部件和密封材料来构成,所以可以用必要的最小限度部件来构成,可以没有材料的浪费,可以实现大幅度抑制成本的轻薄短小的半导体器件。
第四,焊盘、布线、外部连接电极、散热电极通过半刻蚀形成凸点,在封装后逐个进行分离,所以不需要连杆、吊引线。因此,在本发明中完全不需要形成连杆(吊引线)、切割连杆(吊引线)。
第五,在形成凸点的导电图形被埋入绝缘性树脂后,从绝缘性树脂的背面除去导电箔,分离导电图形,所以没有如现有的引线框架那样在引线和引线之间产生的树脂毛刺。
第六,半导体元件通过绝缘性粘结部件与散热电极粘合,该散热电极从背面露出,所以可以将本半导体器件产生的热量从本半导体器件的表面向散热电极高效地释放。而且,通过将氧化硅膜和氧化铝等填充物掺入到绝缘性粘结部件中,可以进一步提高它的散热性。此外,如果将填充物尺寸统一,则半导体元件16和导电图形之间的间隙可保持恒定。
说明金属板23所固定的半导体器件10A、10B和使用这些半导体器件的半导体组件的第5实施形态
图1表示该半导体组件(FCA)50。再有,封装成的半导体器件是图3所示的半导体器件10B。
首先,说明由柔性片构成的第1支撑部件11。这里,从下层起依次层叠第1PI薄片51、第1粘结层52、导电图形53、第2粘结层54和第2PI薄片55。再有,在导电图形为多层的情况下,还使用粘结层,还有上和下的导电图形通过通孔进行电连接的情况。然后,在该第1支撑部件11中,如图1所示,形成至少可以露出金属板23的第1开口部12。
然后,形成第2开口部56,使得导电图形露出。可以将该第2开口部56对应的导电图形32完全露出,也可以仅露出连接的部分。例如,可以完全除去第2PI薄片55、第2粘结层54,此外,如图所示,可以完全除去第2PI薄片55,也可以仅除去第2粘结层54的露出部分。这样的话,焊锡27即不致溢流。
本发明的半导体器件在散热电极15背面粘合金属板23。此外,本发明的半导体组件在于第1支撑部件的背面和金属板23大致处于同一面位置。
考虑到第1支撑部件11和粘合板25的厚度,来决定金属板23的厚度。然后,在通过焊锡27来粘合焊盘14和导电图形32时,从第1开口部12露出的金属板23实质上与第1支撑部件11的背面为同一面,可由此决定各自的厚度。因此,与第2支撑部件对接成为可能,而且与有粘合板25的第2支撑部件对接粘合也成为可能。
下面具体地说明该连接结构的种种例子。
第1例的结构如下:作为第2支撑部件24,采用Al、不锈钢等重量轻的金属板或陶瓷基板,在其上使粘合了的所述金属板23与半导体器件10的背面对接。即,这是不通过粘合板25而直接与第2支撑部件23对接的结构。然后,选择焊锡等焊料、或填入填充物的导热性良好的绝缘性粘结部件来粘合散热电极15和金属板23、金属板23和第2支撑部件24。
第2例结构如下:作为第2支撑部件24,采用Al、不锈钢等重量轻的金属板或陶瓷基板,在其上形成粘合板25,将该粘合板25和金属板23进行粘合。
例如,在采用Al作为第2支撑部件24的情况下,粘合板25最好为Cu。这是因为在Al上可以镀敷Cu。膜厚最好在~10μm左右。而且,由于是镀敷膜,所以可以紧密附着在第2支撑部件24上形成,可以使粘合板25和第2支撑部件24之间的热阻非常小。此外,粘合板25上可以涂敷导电膏,这种替代品是可以用的。
另一方面,Cu粘合板25和Al基板也可以通过粘结剂来粘合,但这种情况下,热阻变大。
此外,作为第2支撑部件24,在采用陶瓷基板的情况下,粘合板25可在用导电膏印刷烧结后形成的电极上来形成。
再有,第2支撑部件24和第1支撑部件11由第3粘结层57来粘合。
例如:
第1PI薄片51:25μm
第2PI薄片55:25μm
第1~第3粘结层52、54、57:25μm(烧结后)
作为材料,采用丙烯基系的粘结剂
焊锡27:50μm
此外,第3粘结层57:25μm
作为材料,采用丙烯基系的粘结剂
粘合板25:约25μm
这样,如果决定调整各自的膜厚,则在第1支撑部件11上粘合半导体器件10A后,可以简单地贴装在优先设置有粘合板25的第2支撑部件24上。
此外,准备将第2支撑部件24贴装在第1支撑部件11上的组件,如果在该组件上形成的开口部56上配置半导体器件10,然后熔融焊锡,则一次熔融焊锡就可以了,而且可以形成没有连接不良的粘合。
因此,半导体元件16产生的热可以通过散热电极15、金属板23、粘合板25向第2支撑部件24释放。而且,与现有的结构(图17B)相比,热阻大幅度地降低,所以可以提高半导体元件16的驱动电流、驱动频率。此外,还可以将该第2支撑部件24的背面安装在图17所示的致动器107、箱体101的底面或臂105上。因此,最终通过该箱体101可以将半导体元件的热量释放到外部。因此,即使将半导体组件安装在硬盘100上,半导体元件本身也不会达到比较高的温度,还可以提高硬盘100的读写速度。再有,该FCA也可以安装在硬盘以外的装置上。这种情况下,可将第2支撑部件对接在热阻小的部件上。
此外,在安装在其它装置上的情况下,也可以采用印刷电路板或陶瓷基板来代替柔性片。
说明使散热电极15突出以代替金属板23的半导体器件10C和该半导体组件50A的第6实施形态
图11表示散热电极15A比焊盘14的表、里两面均突出,散热电极15和粘合板25宛如一体的结构。
首先,用图12~图14来说明该制造方法。再有,图4~图8是同一制造方法,所以这里的说明从略。
图12表示将绝缘性树脂13覆盖在导电箔40上的状态,在与散热电极15A对应的部分上覆盖光致抗蚀剂PR。如果通过该光致抗蚀剂PR对导电箔40进行刻蚀,则如图13所示,可以形成散热电极15A比焊盘14的背面突出的结构。再有,也可以有选择地形成Ag、Au等导电覆盖膜,以该覆盖膜作为掩模以代替光致抗蚀剂PR。该覆盖膜具有防氧化膜的功能。
在贴装有图1所示的金属板23的结构中,金属板23为125μm左右,非常薄,所以可操作性极差。但是,在这种情况下,如果通过刻蚀来形成突出的散热电极15A,则不需要粘合所述金属板23。
然后,如图14所示,在焊盘14、布线30、外部连接电极31被完全分离后,覆盖绝缘覆盖膜26,使配置焊锡的部分露出。然后,在焊锡42被粘合后,按箭头所示的部分来切成小片。
然后,如图11所示,将已分离的半导体器件安装在第1支撑部件11上。随后,如上所述,粘合第2支撑部件24。此时,由于散热电极15A突出,所以对粘合板25简单地夹入焊锡等进行粘合。
再有,图14B是表示去掉一层绝缘性树脂使半导体元件16的背面露出的图。例如,采用将半导体元件的背面对接在上金属模上的模铸法,可以实现图示的密封构造。
说明半导体器件的第6实施形态
图15A是本发明的半导体器件的平面图,图15B是与图15A的A-A线对应的剖面图。
本发明将第1散热电极70A和第2散热电极70B配置在实质上的同一平面上,在其周围设有焊盘14。该焊盘14的背面为原来的外部连接电极,此外,它处于半导体芯片的键合电极19的正下方位置。此外,如图3所示,也可以采用再配置使用的布线。而且,在芯片和芯片之间设有至少一个桥71。在该桥71的两端与焊盘14一体形成,该焊盘14也与键合电极19连接。
此外,将第1半导体芯片16A粘合在向上突出的第1散热电极70A上,将第2半导体芯片16B粘合在同样向上突出的第2散热电极70B上,通过焊锡来连接。
由上述的制造方法的说明可知,对导电箔进行半刻蚀,在完全分离之前由绝缘性树脂13铸模支撑,所以桥71完全没有掉下和脱离的问题。
如本实施例所示,本发明可以将多个芯片封在一个封装内。
这样,至此的实施案例考虑到一个读写放大用IC的散热问题,对其结构作了说明。但是,在假设为各种各样设备的情况下,为了提高其特性,也可以假设必须考虑多个半导体元件散热的情况。当然,可以对各个半导体元件分别进行封装,也可以如图15所示将多个半导体元件封在一个封装内。
当然,在金属板如图1那样与所述散热电极连接的情况下,如图11所示,散热电极本身可以采用突出的结构。而且,它们被安装在柔性片上,并且被安装在装有第2支撑部件的柔性片上。
图16是整个实施案例的种种应用情况,表示出在半导体元件16上形成的凸点B和焊盘14之间的连接方法。再有,P表示Au、Ag等的镀膜,根据需要来形成。
A是按ACP方式(各向异性导电膏/膜)在凸点B和焊盘14(或镀膜P)之间夹入导电颗粒,通过挤压实现电导通。
B是按SBB方式(台式凸点键合)来连接凸点B和焊盘14(或镀膜),同时在周围配置导电膏CP。
C是按ESP方式(被环氧树脂的焊锡连接)在凸点B被压焊固定时在其周围还配置熔融的焊锡SD。
D是按NCP方式(非导电膏)在已压焊导通的凸点周围配置绝缘性粘结部件。
E是按GGI方式(金—金互连)将Au的凸点和Au镀膜P用超声波进行焊接。
最后的F是按焊料凸点方式进行焊接,并在其间浸入绝缘性粘结剂或底填材料。本申请采用该方式。
以上,连接方法是各种各样的,但考虑到连接强度,可从中进行选择。此外,在外部连接电极的背面和第1支撑部件11之间也可以采用这样的结构。
由以上说明可知,在本发明中,通过使散热电极的表面比焊盘的表面突出,可以将半导体元件和散热电极的间隙变窄。特别是键合电极和焊盘之间的间隙按散热电极的突出量来决定,所以焊料的厚度也按该突出量来决定。因此,仅仅靠焊料厚度的加厚部分,就可以使施加于焊锡的应力分散,可以抑制因热循环造成的退化。
此外,通过将金属板粘合在露出于封装背面的散热电极上,提供使金属板比外部连接电极或焊盘的背面更突出的半导体器件,藉以实现比FCA的安装更为容易的优点。
具体地说,在FCA上设置开口部,该FCA背面与所述半导体器件的散热电极面为同一位置,因而具有与第2支撑部件的对接变得容易的特征。
此外,作为第2支撑部件可使用Al,在此处形成由Cu构成的粘合板,通过将散热电极、或金属板粘合在该粘合板上,可以将半导体元件产生的热量通过第2支撑部件排放到外部。
因此,可以防止半导体元件的温度升高,获得与固有的能力接近的性能。特别是在硬盘中安装的FCA可以高效地将其热量排放到外部,所以可以提高硬盘的读写速度。

Claims (34)

1.一种半导体器件,将半导体元件按倒装法与绝缘性树脂一体封装,在其下面,露出与所述半导体元件的键合电极进行电连接的焊盘和位于所述半导体元件的表面的散热电极,其特征在于,
所述散热电极的上表面比所述焊盘的上表面突出,按该突出量来实际决定连接所述键合电极和所述焊盘的连接部件的厚度。
2.如权利要求1所述的半导体器件,其特征在于,所述连接部件是Au、焊锡的焊料组成的凸点或焊球。
3.如权利要求1所述的半导体器件,其特征在于,在所述散热电极的露出部上设置比所述焊盘的背面突出的金属板。
4.如权利要求1所述的半导体器件,其特征在于,将所述焊盘的背面和所述散热电极的背面配置在实际同一平面上。
5.如权利要求1~4任一项所述的半导体器件,其特征在于,所述半导体元件和所述散热电极用绝缘材料来粘合。
6.如权利要求3或4所述的半导体器件,其特征在于,所述散热电极和所述金属板用绝缘材料或导电材料来粘合。
7.如权利要求3所述的半导体器件,其特征在于,所述散热电极和所述金属板用相同材料一体形成。
8.如权利要求5所述的半导体器件,其特征在于,所述绝缘材料的背面比所述焊盘的背面突出。
9.如权利要求8所述的半导体器件,其特征在于,所述焊盘的侧面和从所述焊盘的侧面延伸的所述绝缘材料的背面构成同一曲面。
10.一种半导体组件,包括:第1支撑部件,其上设有导电图形;以及半导体器件,该半导体器件将与所述导电图形进行电连接的半导体元件按倒装法与绝缘性树脂一体封装,在其下面,露出与所述半导体元件的键合电极进行电连接的焊盘和位于所述半导体元件的表面的散热电极;其特征在于,
所述半导体元件和所述散热电极用绝缘材料来粘合,
所述散热电极的上表面比所述焊盘的上表面突出,按该突出量实际决定连接所述键合电极和所述焊盘的连接部件的厚度;
将所述第1支撑部件上设置的导电图形和所述焊盘进行电连接,在与所述散热电极对应的所述第1支撑部件上设有开口部,在所述开口部中设有与所述散热电极粘合的金属板。
11.如权利要求10所述的半导体组件,其特征在于,在所述第1支撑部件的背面,在与所述开口部对应的位置贴附有第2支撑部件,将贴合在所述第2支撑部件上的金属板和所述散热电极粘合。
12.如权利要求11所述的半导体组件,其特征在于,所述散热电极和所述金属板用相同材料一体形成。
13.如权利要求11或12所述的半导体组件,其特征在于,在所述金属板对应的所述第2支撑部件上设有由导电材料组成的粘合板,将所述粘合板和所述金属板进行热耦合。
14.如权利要求13所述的半导体组件,其特征在于,所述金属板以Cu为主要材料,所述第2支撑部件以Al为主要材料,所述粘合板由所述第2支撑部件上形成的以Cu为主要材料的镀膜构成。
15.如权利要求10所述的半导体组件,其特征在于,所述绝缘材料的背面比所述焊盘的背面突出。
16.如权利要求15所述的半导体组件,其特征在于,所述焊盘的侧面和从所述焊盘的侧面延伸的所述绝缘材料的背面构成同一曲面。
17.如权利要求10所述的半导体组件,其特征在于,所述半导体元件是硬盘的读写放大用IC。
18.一种半导体器件,将半导体元件按倒装法与绝缘性树脂一体封装,在其下面,露出与所述半导体元件的键合电极进行电连接的焊盘,通过与所述焊盘一体布线的延伸的外部连接电极,以及在所述半导体元件的下面配置的散热电极,其特征在于,
所述散热电极的上表面比所述焊盘的上表面突出,实质上按该突出量决定连接所述键合电极和所述焊的连接部件的厚度。
19.如权利要求18所述的半导体器件,其特征在于,所述连接部件是由Au、焊锡的焊料组成的凸点或焊球。
20.如权利要求18或19所述的半导体器件,其特佂在于,在所述散热电极的露出部上设置比所述外部连接电极的背面突出的金属板。
21.如权利要求20所述的半导体器件,其特征在于,将所述外部连接电极的背面和所述散热电极的背面配置在实际同一平面上。
22.如权利要求21所述的半导体器件,其特征在于,所述半导体元件和所述散热电极用绝缘材料来粘合。
23.如权利要求20所述的半导体器件,其特征在于,所述散热电极和所述金属板用绝缘材料或导电材料来粘合。
24.如权利要求20所述的半导体器件,其特征在于,所述散热电极和所述金属板用相同材料一体形成。
25.如权利要求22所述的半导体器件,其特征在于,所述绝缘材料的背面比所述外部连接电极的背面突出。
26.如权利要求25所述的半导体器件,其特征在于,所述外部连接电极的侧面和从所述外部连接电极的侧面延伸的所述绝缘材料的背面构成同一曲面。
27.一种半导体组件,包括:第一支撑部件,其上设有导电图形;以及
半导体器件,与所述导电图形进行电连接的半导体元件按倒装法与绝缘性树脂一体封装,在其下面,露出与所述半导体元件的键合电极进行电连接的焊盘、通过与所述焊盘一体布线而设置的外部连接电极、以及位于所述半导体元件表面的散热电极;其特征在于,
所述半导体元件和所述散热电极用绝缘性粘接部件来粘合,
所述散热电极的上表面比所述焊盘的上表面突出,按该突出量实际决定连接所述键合电极和所述焊盘的连接部件的厚度;
所述第一支撑部件上设置的导电图形与所述外部连接电极进行电连接,在所述散热电极对应的所述第一支撑部件上设有开口部,在所述开口部中设有与所述散热电极粘合的金属板。
28.如权利要求27所述的半导体组件,其特征在于,在所述第一支撑部件的背面贴附有粘合了所述金属板的第2支撑部件。
29.如权利要求27所述的半导体组件,其特征在于,所述散热电极和所述金属板由同一材料一体形成。
30.如权利要求28所述的半导体组件,其特征在于,在所述金属板对应的所述第2支撑部件中设有由导电材料组成的粘合板,将所述粘合板与所述金属板进行热耦合。
31.如权利要求30所述的半导体组件,其特征在于,所述金属板以Cu作为主要材料,所述第2支撑部件以Al为主要材料,所述粘合板以所述第2支撑部件上形成的Cu为主要材料的镀膜组成。
32.如权利要求27所述的半导体组件,其特征在于,所述绝缘性粘结部件的背面比所述外部连接电极的背面突出。
33.如权利要求32所述的半导体组件,其特征在于,所述外部连接电极的侧面和与所述外部连接电极粘合的所述绝缘性粘合部件的背面构成同一曲面。
34.如权利要求27所述的半导体组件,所述导体元件是硬盘的读写放大用IC。
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