CN1191626C - 数据存储和处理装置及其制造方法 - Google Patents
数据存储和处理装置及其制造方法 Download PDFInfo
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- CN1191626C CN1191626C CNB998092339A CN99809233A CN1191626C CN 1191626 C CN1191626 C CN 1191626C CN B998092339 A CNB998092339 A CN B998092339A CN 99809233 A CN99809233 A CN 99809233A CN 1191626 C CN1191626 C CN 1191626C
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Abstract
Description
0.35微米 | 0.25微米 | 0.18微米 | |
通路尺寸/间隔 | 0.50/0.45 | 0.36/0.38 | 0.24/0.28 |
金属宽度/间隔 | 0.60/0.50 | 0.40/0.40 | 0.28/0.28 |
金属通路重叠 | 0.20 | 0.15 | 0.10 |
致密金属(单元)宽度 | 0.40 | 0.30 | 0.24 |
致密金属(单元)间隔 | 0.40 | 0.30 | 0.24 |
最小单元尺寸 | 0.8×0.8微米 | 0.6×0.6微米 | 0.48×0.48微米 |
单元面积 | 0.64平方微米 | 0.36平方微米 | 0.23平方微米 |
存储密度/层 | 0.156Gb/cm2 | 0.278Gb/cm2 | 0.435Gb/cm2 |
优化区段(#) | 16 | 4 | 4 |
管芯面积 | 742mm2 | 402mm2 | 257mm2 |
随机存取时间 | 52ns | 76ns | 68ns |
功耗(阵列) | 25mW | 22mW | 9mW |
Claims (39)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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NO982518A NO308149B1 (no) | 1998-06-02 | 1998-06-02 | Skalerbar, integrert databehandlingsinnretning |
NO19982518 | 1998-06-02 |
Publications (2)
Publication Number | Publication Date |
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CN1316102A CN1316102A (zh) | 2001-10-03 |
CN1191626C true CN1191626C (zh) | 2005-03-02 |
Family
ID=19902102
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Application Number | Title | Priority Date | Filing Date |
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CNB998092932A Expired - Fee Related CN1146039C (zh) | 1998-06-02 | 1999-06-02 | 可调节的集成数据处理设备 |
CNB998092339A Expired - Lifetime CN1191626C (zh) | 1998-06-02 | 1999-06-02 | 数据存储和处理装置及其制造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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CNB998092932A Expired - Fee Related CN1146039C (zh) | 1998-06-02 | 1999-06-02 | 可调节的集成数据处理设备 |
Country Status (11)
Country | Link |
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US (2) | US6787825B1 (zh) |
EP (2) | EP1088343A1 (zh) |
JP (3) | JP3526552B2 (zh) |
KR (2) | KR100392446B1 (zh) |
CN (2) | CN1146039C (zh) |
AU (2) | AU754391B2 (zh) |
CA (2) | CA2334287C (zh) |
HK (2) | HK1040002B (zh) |
NO (1) | NO308149B1 (zh) |
RU (2) | RU2208267C2 (zh) |
WO (2) | WO1999063527A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI698809B (zh) * | 2017-08-24 | 2020-07-11 | 美商谷歌有限責任公司 | 用於三維堆疊式神經網路加速器之良率改善 |
Families Citing this family (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5354695A (en) * | 1992-04-08 | 1994-10-11 | Leedy Glenn J | Membrane dielectric isolation IC fabrication |
US6714625B1 (en) * | 1992-04-08 | 2004-03-30 | Elm Technology Corporation | Lithography device for semiconductor circuit pattern generation |
US5526320A (en) * | 1994-12-23 | 1996-06-11 | Micron Technology Inc. | Burst EDO memory device |
US6551857B2 (en) | 1997-04-04 | 2003-04-22 | Elm Technology Corporation | Three dimensional structure integrated circuits |
US5915167A (en) * | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
JP4744757B2 (ja) | 1999-07-21 | 2011-08-10 | イー インク コーポレイション | アクティブマトリクス駆動電子ディスプレイの性能を高めるための蓄電キャパシタの使用 |
US6545291B1 (en) | 1999-08-31 | 2003-04-08 | E Ink Corporation | Transistor design for use in the construction of an electronically driven display |
US7025277B2 (en) * | 2000-09-25 | 2006-04-11 | The Trustees Of Princeton University | Smart card composed of organic processing elements |
US6646912B2 (en) * | 2001-06-05 | 2003-11-11 | Hewlett-Packard Development Company, Lp. | Non-volatile memory |
US6744681B2 (en) * | 2001-07-24 | 2004-06-01 | Hewlett-Packard Development Company, L.P. | Fault-tolerant solid state memory |
JP3591497B2 (ja) * | 2001-08-16 | 2004-11-17 | ソニー株式会社 | 強誘電体型不揮発性半導体メモリ |
US6504742B1 (en) * | 2001-10-31 | 2003-01-07 | Hewlett-Packard Company | 3-D memory device for large storage capacity |
NO20015871D0 (no) * | 2001-11-30 | 2001-11-30 | Thin Film Electronics Asa | Minneinnretning med flettede lag |
US6762950B2 (en) | 2001-11-30 | 2004-07-13 | Thin Film Electronics Asa | Folded memory layers |
US20030188189A1 (en) * | 2002-03-27 | 2003-10-02 | Desai Anish P. | Multi-level and multi-platform intrusion detection and response system |
US20030218896A1 (en) * | 2002-05-22 | 2003-11-27 | Pon Harry Q | Combined memory |
WO2004015764A2 (en) | 2002-08-08 | 2004-02-19 | Leedy Glenn J | Vertical system integration |
US6934199B2 (en) * | 2002-12-11 | 2005-08-23 | Micron Technology, Inc. | Memory device and method having low-power, high write latency mode and high-power, low write latency mode and/or independently selectable write latency |
US6961259B2 (en) * | 2003-01-23 | 2005-11-01 | Micron Technology, Inc. | Apparatus and methods for optically-coupled memory systems |
CN100437983C (zh) * | 2003-02-14 | 2008-11-26 | 旺宏电子股份有限公司 | 罩幕式只读存储器的制造方法及其结构 |
DE10330825A1 (de) | 2003-07-08 | 2005-06-23 | Infineon Technologies Ag | Integrierter Schaltkreis |
US20060249370A1 (en) * | 2003-09-15 | 2006-11-09 | Makoto Nagashima | Back-biased face target sputtering based liquid crystal display device |
JP2005159111A (ja) * | 2003-11-27 | 2005-06-16 | Matsushita Electric Ind Co Ltd | マルチチップ型半導体装置 |
US6862206B1 (en) * | 2003-12-19 | 2005-03-01 | Hewlett-Packard Development Company, L.P. | Memory module hybridizing an atomic resolution storage (ARS) memory and a magnetic memory |
JP4045506B2 (ja) * | 2004-01-21 | 2008-02-13 | セイコーエプソン株式会社 | 積層型半導体記憶装置 |
JP4529493B2 (ja) * | 2004-03-12 | 2010-08-25 | 株式会社日立製作所 | 半導体装置 |
JP4567426B2 (ja) * | 2004-11-25 | 2010-10-20 | パナソニック株式会社 | ショットキーバリアダイオード及びダイオードアレイ |
KR20060080446A (ko) * | 2005-01-05 | 2006-07-10 | 삼성전자주식회사 | 수직형 유기 박막 트랜지스터 및 유기 발광 트랜지스터 |
NO20052904L (no) * | 2005-06-14 | 2006-12-15 | Thin Film Electronics Asa | Et ikke-flyktig elektrisk minnesystem |
US20070007510A1 (en) * | 2005-07-05 | 2007-01-11 | Spansion Llc | Stackable memory device and organic transistor structure |
US7935957B2 (en) * | 2005-08-12 | 2011-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and a semiconductor device |
WO2007029253A2 (en) | 2005-09-06 | 2007-03-15 | Beyond Blades Ltd. | 3-dimensional multi-layered modular computer architecture |
US8145851B2 (en) * | 2005-09-07 | 2012-03-27 | Sony Corporation | Integrated device |
US7369424B2 (en) * | 2005-11-09 | 2008-05-06 | Industrial Technology Research Institute | Programmable memory cell and operation method |
US8984256B2 (en) * | 2006-02-03 | 2015-03-17 | Russell Fish | Thread optimized multiprocessor architecture |
US20070205096A1 (en) * | 2006-03-06 | 2007-09-06 | Makoto Nagashima | Magnetron based wafer processing |
JP5258167B2 (ja) * | 2006-03-27 | 2013-08-07 | 株式会社沖データ | 半導体複合装置、ledヘッド、及び画像形成装置 |
EP1850378A3 (en) * | 2006-04-28 | 2013-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semicondutor device |
US8454810B2 (en) | 2006-07-14 | 2013-06-04 | 4D-S Pty Ltd. | Dual hexagonal shaped plasma source |
US8032711B2 (en) * | 2006-12-22 | 2011-10-04 | Intel Corporation | Prefetching from dynamic random access memory to a static random access memory |
JP2008251666A (ja) * | 2007-03-29 | 2008-10-16 | Tohoku Univ | 三次元構造半導体装置 |
US7898893B2 (en) * | 2007-09-12 | 2011-03-01 | Samsung Electronics Co., Ltd. | Multi-layered memory devices |
US7588957B2 (en) * | 2007-10-17 | 2009-09-15 | Applied Materials, Inc. | CVD process gas flow, pumping and/or boosting |
EA200800329A1 (ru) * | 2008-02-14 | 2008-06-30 | АЛЬТЕРА СОЛЮШИОНС Эс. Эй. | Контактный узел на встречных контактах с капиллярным соединительным элементом и способ его изготовления |
JP5578770B2 (ja) * | 2008-04-21 | 2014-08-27 | セイコーエプソン株式会社 | マスクromおよびマスクromの製造方法 |
RU2495476C2 (ru) * | 2008-06-20 | 2013-10-10 | Инвенсис Системз, Инк. | Системы и способы для иммерсивного взаимодействия с действительными и/или имитируемыми техническими средствами для управления технологическим процессом, контроля состояния окружающей среды и производственного контроля |
US7998846B2 (en) * | 2008-09-12 | 2011-08-16 | Spansion Llc | 3-D integrated circuit system and method |
JP5331427B2 (ja) * | 2008-09-29 | 2013-10-30 | 株式会社日立製作所 | 半導体装置 |
RU2471265C1 (ru) * | 2008-10-23 | 2012-12-27 | Шарп Кабусики Кайся | Полупроводниковое устройство, способ его изготовления и дисплейное устройство |
US7858468B2 (en) | 2008-10-30 | 2010-12-28 | Micron Technology, Inc. | Memory devices and formation methods |
KR101009401B1 (ko) | 2008-11-03 | 2011-01-19 | 주식회사 동부하이텍 | 연결배선 커패시턴스 분석용 테스트 패턴 |
KR101527193B1 (ko) * | 2008-12-10 | 2015-06-08 | 삼성전자주식회사 | 반도체 소자 및 그의 셀 블록 배치 방법 |
WO2010109718A1 (ja) | 2009-03-26 | 2010-09-30 | シャープ株式会社 | チップ部品実装構造、チップ部品実装方法および液晶表示装置 |
US8053814B2 (en) * | 2009-04-08 | 2011-11-08 | International Business Machines Corporation | On-chip embedded thermal antenna for chip cooling |
US8417974B2 (en) | 2009-11-16 | 2013-04-09 | International Business Machines Corporation | Power efficient stack of multicore microprocessors |
CN102687269A (zh) * | 2010-02-01 | 2012-09-19 | 夏普株式会社 | 半导体装置及其制造方法 |
TW201207852A (en) * | 2010-04-05 | 2012-02-16 | Mosaid Technologies Inc | Semiconductor memory device having a three-dimensional structure |
RU2436151C1 (ru) | 2010-11-01 | 2011-12-10 | Федеральное государственное унитарное предприятие "Российский Федеральный ядерный центр - Всероссийский научно-исследовательский институт экспериментальной физики" (ФГУП "РФЯЦ-ВНИИЭФ") | Способ определения структуры гибридной вычислительной системы |
US20190139827A1 (en) * | 2011-06-28 | 2019-05-09 | Monolithic 3D Inc. | 3d semiconductor device and system |
US9177609B2 (en) | 2011-06-30 | 2015-11-03 | Sandisk Technologies Inc. | Smart bridge for memory core |
JP6105266B2 (ja) | 2011-12-15 | 2017-03-29 | 株式会社半導体エネルギー研究所 | 記憶装置 |
US9208070B2 (en) | 2011-12-20 | 2015-12-08 | Sandisk Technologies Inc. | Wear leveling of multiple memory devices |
WO2013111757A1 (en) | 2012-01-23 | 2013-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8933715B2 (en) * | 2012-04-08 | 2015-01-13 | Elm Technology Corporation | Configurable vertical integration |
RU2500011C1 (ru) * | 2012-07-09 | 2013-11-27 | Святослав Владимирович Лобко | Электронная книга (варианты) |
US9007834B2 (en) | 2013-01-10 | 2015-04-14 | Conversant Intellectual Property Management Inc. | Nonvolatile memory with split substrate select gates and hierarchical bitline configuration |
US9002903B2 (en) * | 2013-03-15 | 2015-04-07 | Wisconsin Alumni Research Foundation | Database system with data organization providing improved bit parallel processing |
WO2014178751A1 (ru) * | 2013-04-29 | 2014-11-06 | Общество с ограниченной ответственностью "Спутниковые инновационные космические системы" | Бортовой комплекс управления малым космическим аппаратом с открытой архитектурой и использованием технологий plug-and-play |
US9740496B2 (en) * | 2013-09-06 | 2017-08-22 | International Business Machines Corporation | Processor with memory-embedded pipeline for table-driven computation |
KR20150056309A (ko) | 2013-11-15 | 2015-05-26 | 삼성전자주식회사 | 3차원 반도체 장치 및 그 제조 방법 |
CA2943489C (en) * | 2014-03-21 | 2019-11-12 | Google Inc. | Chip including classical and quantum computing processers |
JP6901831B2 (ja) | 2015-05-26 | 2021-07-14 | 株式会社半導体エネルギー研究所 | メモリシステム、及び情報処理システム |
JP6773453B2 (ja) | 2015-05-26 | 2020-10-21 | 株式会社半導体エネルギー研究所 | 記憶装置及び電子機器 |
US9886571B2 (en) | 2016-02-16 | 2018-02-06 | Xerox Corporation | Security enhancement of customer replaceable unit monitor (CRUM) |
CN107369678A (zh) * | 2016-05-13 | 2017-11-21 | 北京中电网信息技术有限公司 | 一种系统级封装方法及其封装单元 |
RU173334U1 (ru) * | 2017-01-27 | 2017-08-22 | Акционерное общество "МЦСТ" | Блок процессорный унифицированный с микропроцессором с микроархитектурой Эльбрус шестого поколения |
US10978169B2 (en) | 2017-03-17 | 2021-04-13 | Xerox Corporation | Pad detection through pattern analysis |
CN116884452A (zh) * | 2017-06-02 | 2023-10-13 | 超极存储器股份有限公司 | 运算处理装置 |
EP3662474B1 (en) | 2017-07-30 | 2023-02-22 | NeuroBlade Ltd. | A memory-based distributed processor architecture |
US11031405B2 (en) * | 2017-11-02 | 2021-06-08 | Micron Technology, Inc. | Peripheral logic circuits under DRAM memory arrays |
CN109993275B (zh) * | 2017-12-29 | 2021-01-29 | 华为技术有限公司 | 一种信号处理方法及装置 |
US10497521B1 (en) | 2018-10-29 | 2019-12-03 | Xerox Corporation | Roller electric contact |
JP6957123B2 (ja) * | 2019-02-25 | 2021-11-02 | 東芝情報システム株式会社 | ビア及び半導体装置 |
US11421679B1 (en) | 2020-06-30 | 2022-08-23 | Vulcan Industrial Holdings, LLC | Packing assembly with threaded sleeve for interaction with an installation tool |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4646266A (en) * | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
JP2788265B2 (ja) * | 1988-07-08 | 1998-08-20 | オリンパス光学工業株式会社 | 強誘電体メモリ及びその駆動方法,製造方法 |
US5306935A (en) | 1988-12-21 | 1994-04-26 | Texas Instruments Incorporated | Method of forming a nonvolatile stacked memory |
JPH03137896A (ja) * | 1989-10-23 | 1991-06-12 | Matsushita Giken Kk | 記憶素子および記憶装置 |
US5376561A (en) | 1990-12-31 | 1994-12-27 | Kopin Corporation | High density electronic circuit modules |
US5383269A (en) | 1991-09-03 | 1995-01-24 | Microelectronics And Computer Technology Corporation | Method of making three dimensional integrated circuit interconnect module |
JP3354937B2 (ja) * | 1993-04-23 | 2002-12-09 | イルビン センサーズ コーポレーション | それぞれが積層体表面に固定されたicチップと相互作用するicチップの積層体を含んだ電子モジュール |
US5495397A (en) | 1993-04-27 | 1996-02-27 | International Business Machines Corporation | Three dimensional package and architecture for high performance computer |
EP1178530A2 (en) * | 1993-09-30 | 2002-02-06 | Kopin Corporation | Three-dimensional processor using transferred thin film circuits |
US5714768A (en) | 1995-10-24 | 1998-02-03 | Energy Conversion Devices, Inc. | Second-layer phase change memory array on top of a logic device |
US5612228A (en) * | 1996-04-24 | 1997-03-18 | Motorola | Method of making CMOS with organic and inorganic semiconducting region |
-
1998
- 1998-06-02 NO NO982518A patent/NO308149B1/no unknown
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI698809B (zh) * | 2017-08-24 | 2020-07-11 | 美商谷歌有限責任公司 | 用於三維堆疊式神經網路加速器之良率改善 |
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Granted publication date: 20050302 |
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CX01 | Expiry of patent term |