CN1196205C - 半导体发光元件 - Google Patents
半导体发光元件 Download PDFInfo
- Publication number
- CN1196205C CN1196205C CNB011218460A CN01121846A CN1196205C CN 1196205 C CN1196205 C CN 1196205C CN B011218460 A CNB011218460 A CN B011218460A CN 01121846 A CN01121846 A CN 01121846A CN 1196205 C CN1196205 C CN 1196205C
- Authority
- CN
- China
- Prior art keywords
- electrode
- layer
- mentioned
- type
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 323
- 238000004519 manufacturing process Methods 0.000 title abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 141
- 229910052594 sapphire Inorganic materials 0.000 abstract description 11
- 239000010980 sapphire Substances 0.000 abstract description 11
- 230000004888 barrier function Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 349
- 230000000903 blocking effect Effects 0.000 description 59
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 44
- 230000003287 optical effect Effects 0.000 description 43
- 238000000034 method Methods 0.000 description 39
- 239000000463 material Substances 0.000 description 37
- 239000010931 gold Substances 0.000 description 17
- 238000002310 reflectometry Methods 0.000 description 17
- 239000007924 injection Substances 0.000 description 16
- 238000002347 injection Methods 0.000 description 16
- 238000010521 absorption reaction Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 11
- 239000003870 refractory metal Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 230000000630 rising effect Effects 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 238000009940 knitting Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- -1 GaAlP Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- FKGSQMZJWMXXOJ-UHFFFAOYSA-N C(C)[In](CC)CC.[In] Chemical compound C(C)[In](CC)CC.[In] FKGSQMZJWMXXOJ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000004446 light reflex Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- ZGNPLWZYVAFUNZ-UHFFFAOYSA-N tert-butylphosphane Chemical compound CC(C)(C)P ZGNPLWZYVAFUNZ-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05023—Disposition the whole internal layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/06102—Disposition the bonding areas being at different heights
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/1701—Structure
- H01L2224/1703—Bump connectors having different sizes, e.g. different diameters, heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
Description
金属材料 | 反射率R[%] | 热导率k[W/m·K] |
Al | 77.6 | 237 |
Cr | 29.1 | 90.3 |
Co | 37.4 | 99.2 |
Cu | 87.7 | 398 |
Au | 92.1 | 315 |
Hf | 13 | 23 |
Mo | 20.4 | 138 |
Ni | 37.5 | 90.5 |
Nb | 18 | 53.7 |
Os | 5.3 | 87.3 |
Ag | 88.2 | 427 |
Ta | 20.3 | 57.5 |
Ti | 25.8 | 21.9 |
W | 15 | 178 |
Claims (2)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP200298/2000 | 2000-06-30 | ||
JP2000200298A JP4024994B2 (ja) | 2000-06-30 | 2000-06-30 | 半導体発光素子 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710159720A Division CN100587985C (zh) | 2000-06-30 | 2001-06-29 | 半导体发光元件 |
CNB2004100566398A Division CN100459183C (zh) | 2000-06-30 | 2001-06-29 | 半导体发光元件及其制造方法以及半导体发光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1330416A CN1330416A (zh) | 2002-01-09 |
CN1196205C true CN1196205C (zh) | 2005-04-06 |
Family
ID=18698187
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710159720A Expired - Lifetime CN100587985C (zh) | 2000-06-30 | 2001-06-29 | 半导体发光元件 |
CNB2004100566398A Expired - Lifetime CN100459183C (zh) | 2000-06-30 | 2001-06-29 | 半导体发光元件及其制造方法以及半导体发光装置 |
CNB011218460A Expired - Lifetime CN1196205C (zh) | 2000-06-30 | 2001-06-29 | 半导体发光元件 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710159720A Expired - Lifetime CN100587985C (zh) | 2000-06-30 | 2001-06-29 | 半导体发光元件 |
CNB2004100566398A Expired - Lifetime CN100459183C (zh) | 2000-06-30 | 2001-06-29 | 半导体发光元件及其制造方法以及半导体发光装置 |
Country Status (6)
Country | Link |
---|---|
US (9) | US20020014630A1 (zh) |
EP (1) | EP1168460A3 (zh) |
JP (1) | JP4024994B2 (zh) |
KR (2) | KR100469312B1 (zh) |
CN (3) | CN100587985C (zh) |
TW (1) | TW531902B (zh) |
Families Citing this family (199)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4024994B2 (ja) * | 2000-06-30 | 2007-12-19 | 株式会社東芝 | 半導体発光素子 |
US6791119B2 (en) | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
US6794684B2 (en) * | 2001-02-01 | 2004-09-21 | Cree, Inc. | Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same |
JP5283293B2 (ja) * | 2001-02-21 | 2013-09-04 | ソニー株式会社 | 半導体発光素子 |
US7211833B2 (en) | 2001-07-23 | 2007-05-01 | Cree, Inc. | Light emitting diodes including barrier layers/sublayers |
US6740906B2 (en) | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
US20030189215A1 (en) | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
US8294172B2 (en) | 2002-04-09 | 2012-10-23 | Lg Electronics Inc. | Method of fabricating vertical devices using a metal support film |
WO2003107444A2 (en) * | 2002-06-17 | 2003-12-24 | Kopin Corporation | Light-emitting diode device geometry |
DE10244200A1 (de) | 2002-09-23 | 2004-04-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
JP4116387B2 (ja) * | 2002-09-30 | 2008-07-09 | 株式会社東芝 | 半導体発光素子 |
JP2006506827A (ja) * | 2002-11-16 | 2006-02-23 | エルジー イノテック カンパニー リミテッド | 光デバイス及びその製造方法 |
DE10307280B4 (de) * | 2002-11-29 | 2005-09-01 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines lichtemittierenden Halbleiterbauelements |
US6929966B2 (en) | 2002-11-29 | 2005-08-16 | Osram Opto Semiconductors Gmbh | Method for producing a light-emitting semiconductor component |
DE10350707B4 (de) * | 2003-02-26 | 2014-02-13 | Osram Opto Semiconductors Gmbh | Elektrischer Kontakt für optoelektronischen Halbleiterchip und Verfahren zu dessen Herstellung |
TWI243488B (en) * | 2003-02-26 | 2005-11-11 | Osram Opto Semiconductors Gmbh | Electrical contact-area for optoelectronic semiconductor-chip and its production method |
JP2004281432A (ja) * | 2003-03-12 | 2004-10-07 | Nichia Chem Ind Ltd | 窒化物半導体素子及びその製造方法 |
US7141828B2 (en) * | 2003-03-19 | 2006-11-28 | Gelcore, Llc | Flip-chip light emitting diode with a thermally stable multiple layer reflective p-type contact |
US7538361B2 (en) * | 2003-03-24 | 2009-05-26 | Showa Denko K.K. | Ohmic electrode structure, compound semiconductor light emitting device having the same, and LED lamp |
US7521854B2 (en) | 2003-04-15 | 2009-04-21 | Luminus Devices, Inc. | Patterned light emitting devices and extraction efficiencies related to the same |
US20040259279A1 (en) | 2003-04-15 | 2004-12-23 | Erchak Alexei A. | Light emitting device methods |
US7166871B2 (en) * | 2003-04-15 | 2007-01-23 | Luminus Devices, Inc. | Light emitting systems |
US7274043B2 (en) | 2003-04-15 | 2007-09-25 | Luminus Devices, Inc. | Light emitting diode systems |
US7105861B2 (en) | 2003-04-15 | 2006-09-12 | Luminus Devices, Inc. | Electronic device contact structures |
US7262550B2 (en) | 2003-04-15 | 2007-08-28 | Luminus Devices, Inc. | Light emitting diode utilizing a physical pattern |
US7098589B2 (en) * | 2003-04-15 | 2006-08-29 | Luminus Devices, Inc. | Light emitting devices with high light collimation |
US6831302B2 (en) | 2003-04-15 | 2004-12-14 | Luminus Devices, Inc. | Light emitting devices with improved extraction efficiency |
US7667238B2 (en) | 2003-04-15 | 2010-02-23 | Luminus Devices, Inc. | Light emitting devices for liquid crystal displays |
US7083993B2 (en) * | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Methods of making multi-layer light emitting devices |
US7074631B2 (en) * | 2003-04-15 | 2006-07-11 | Luminus Devices, Inc. | Light emitting device methods |
US7211831B2 (en) | 2003-04-15 | 2007-05-01 | Luminus Devices, Inc. | Light emitting device with patterned surfaces |
US7084434B2 (en) | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Uniform color phosphor-coated light-emitting diode |
KR100826424B1 (ko) * | 2003-04-21 | 2008-04-29 | 삼성전기주식회사 | 반도체 발광 다이오드 및 그 제조방법 |
KR100612832B1 (ko) * | 2003-05-07 | 2006-08-18 | 삼성전자주식회사 | 고성능의 질화갈륨계 광소자 구현을 위한 니켈계 고용체를 이용한 오믹 접촉 형성을 위한 금속박막 및 그 제조방법 |
US6969874B1 (en) * | 2003-06-12 | 2005-11-29 | Sandia Corporation | Flip-chip light emitting diode with resonant optical microcavity |
JP3951300B2 (ja) * | 2003-07-23 | 2007-08-01 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
KR100624411B1 (ko) * | 2003-08-25 | 2006-09-18 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
TWI220076B (en) * | 2003-08-27 | 2004-08-01 | Au Optronics Corp | Light-emitting device |
FR2859312B1 (fr) * | 2003-09-02 | 2006-02-17 | Soitec Silicon On Insulator | Scellement metallique multifonction |
KR100571816B1 (ko) * | 2003-09-08 | 2006-04-17 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
US7344903B2 (en) | 2003-09-17 | 2008-03-18 | Luminus Devices, Inc. | Light emitting device processes |
US7341880B2 (en) * | 2003-09-17 | 2008-03-11 | Luminus Devices, Inc. | Light emitting device processes |
KR100576849B1 (ko) | 2003-09-19 | 2006-05-10 | 삼성전기주식회사 | 발광소자 및 그 제조방법 |
JP4130163B2 (ja) * | 2003-09-29 | 2008-08-06 | 三洋電機株式会社 | 半導体発光素子 |
EP1521312A3 (de) * | 2003-09-30 | 2008-01-16 | Osram Opto Semiconductors GmbH | Optoelektronisches Bauelement mit einem metallisierten Träger |
KR100571818B1 (ko) * | 2003-10-08 | 2006-04-17 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
KR100647278B1 (ko) | 2003-10-27 | 2006-11-17 | 삼성전자주식회사 | III - V 족 GaN 계 화합물 반도체 및 이에적용되는 p-형 전극 |
US7341882B2 (en) * | 2003-11-18 | 2008-03-11 | Uni Light Technology Inc. | Method for forming an opto-electronic device |
US7450311B2 (en) | 2003-12-12 | 2008-11-11 | Luminus Devices, Inc. | Optical display systems and methods |
US20050133806A1 (en) * | 2003-12-17 | 2005-06-23 | Hui Peng | P and N contact pad layout designs of GaN based LEDs for flip chip packaging |
KR100506741B1 (ko) * | 2003-12-24 | 2005-08-08 | 삼성전기주식회사 | 플립칩용 질화물 반도체 발광소자 및 그 제조방법 |
KR100978234B1 (ko) | 2004-01-06 | 2010-08-26 | 삼성엘이디 주식회사 | 화합물 반도체 발광소자의 저저항 전극 및 이를 이용한화합물 반도체 발광소자 |
US7960746B2 (en) * | 2004-01-06 | 2011-06-14 | Samsung Led Co., Ltd. | Low resistance electrode and compound semiconductor light emitting device including the same |
US7183588B2 (en) * | 2004-01-08 | 2007-02-27 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emission device |
KR100585919B1 (ko) * | 2004-01-15 | 2006-06-01 | 학교법인 포항공과대학교 | 질화갈륨계 ⅲⅴ족 화합물 반도체 소자 및 그 제조방법 |
KR100586949B1 (ko) * | 2004-01-19 | 2006-06-07 | 삼성전기주식회사 | 플립칩용 질화물 반도체 발광소자 |
JP2005223165A (ja) | 2004-02-06 | 2005-08-18 | Sanyo Electric Co Ltd | 窒化物系発光素子 |
JP2005228924A (ja) * | 2004-02-13 | 2005-08-25 | Toshiba Corp | 半導体発光素子 |
WO2011143510A1 (en) | 2010-05-12 | 2011-11-17 | Lynk Labs, Inc. | Led lighting system |
US10575376B2 (en) | 2004-02-25 | 2020-02-25 | Lynk Labs, Inc. | AC light emitting diode and AC LED drive methods and apparatus |
US10499465B2 (en) | 2004-02-25 | 2019-12-03 | Lynk Labs, Inc. | High frequency multi-voltage and multi-brightness LED lighting devices and systems and methods of using same |
JP2005277372A (ja) * | 2004-02-25 | 2005-10-06 | Sanken Electric Co Ltd | 半導体発光素子及びその製造方法 |
JP2005259820A (ja) | 2004-03-09 | 2005-09-22 | Sharp Corp | Iii−v族化合物半導体発光素子とその製造方法 |
KR100634503B1 (ko) * | 2004-03-12 | 2006-10-16 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
KR20050095721A (ko) * | 2004-03-27 | 2005-09-30 | 삼성전자주식회사 | III - V 족 GaN 계 화합물 반도체 발광소자 및 그제조방법 |
JP2005317676A (ja) | 2004-04-27 | 2005-11-10 | Sony Corp | 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法 |
JP2005347632A (ja) * | 2004-06-04 | 2005-12-15 | Sharp Corp | 半導体装置および電子機器 |
CN100463243C (zh) * | 2004-06-14 | 2009-02-18 | 北京大学 | 一种顶出光电极及其制备方法 |
CN100550441C (zh) * | 2004-06-24 | 2009-10-14 | 昭和电工株式会社 | 反射性正电极和使用其的氮化镓基化合物半导体发光器件 |
JP2006041498A (ja) * | 2004-06-24 | 2006-02-09 | Showa Denko Kk | 反射性正極およびそれを用いた窒化ガリウム系化合物半導体発光素子 |
US7557380B2 (en) | 2004-07-27 | 2009-07-07 | Cree, Inc. | Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads |
TWI374552B (en) * | 2004-07-27 | 2012-10-11 | Cree Inc | Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming |
WO2006011672A1 (en) | 2004-07-29 | 2006-02-02 | Showa Denko K.K. | Positive electrode for semiconductor light-emitting device |
US20060038188A1 (en) | 2004-08-20 | 2006-02-23 | Erchak Alexei A | Light emitting diode systems |
JP4807983B2 (ja) * | 2004-08-24 | 2011-11-02 | 昭和電工株式会社 | 化合物半導体発光素子用正極、該正極を用いた発光素子およびランプ |
KR100773538B1 (ko) * | 2004-10-07 | 2007-11-07 | 삼성전자주식회사 | 반사 전극 및 이를 구비하는 화합물 반도체 발광소자 |
TWI257714B (en) * | 2004-10-20 | 2006-07-01 | Arima Optoelectronics Corp | Light-emitting device using multilayer composite metal plated layer as flip-chip electrode |
US7679097B2 (en) | 2004-10-21 | 2010-03-16 | Nichia Corporation | Semiconductor light emitting device and method for manufacturing the same |
JP4592388B2 (ja) * | 2004-11-04 | 2010-12-01 | シャープ株式会社 | Iii−v族化合物半導体発光素子およびその製造方法 |
US20060113548A1 (en) * | 2004-11-29 | 2006-06-01 | Ching-Chung Chen | Light emitting diode |
CN1330011C (zh) * | 2004-12-17 | 2007-08-01 | 北京工业大学 | 低接触电阻、低光吸收、全角高反射的led电极 |
CN100358167C (zh) * | 2004-12-17 | 2007-12-26 | 北京工业大学 | 一种GaN基LED高反电极 |
CN100435360C (zh) * | 2004-12-27 | 2008-11-19 | 北京大学 | 带有二维自然散射出光面的led芯片的制备方法 |
EP1681712A1 (en) * | 2005-01-13 | 2006-07-19 | S.O.I. Tec Silicon on Insulator Technologies S.A. | Method of producing substrates for optoelectronic applications |
US7045375B1 (en) * | 2005-01-14 | 2006-05-16 | Au Optronics Corporation | White light emitting device and method of making same |
TWI244780B (en) * | 2005-01-19 | 2005-12-01 | Chih-Chen Chou | LED package method |
TWI247441B (en) * | 2005-01-21 | 2006-01-11 | United Epitaxy Co Ltd | Light emitting diode and fabricating method thereof |
US7692207B2 (en) * | 2005-01-21 | 2010-04-06 | Luminus Devices, Inc. | Packaging designs for LEDs |
US7170100B2 (en) | 2005-01-21 | 2007-01-30 | Luminus Devices, Inc. | Packaging designs for LEDs |
CN100379042C (zh) * | 2005-02-18 | 2008-04-02 | 乐清市亿昊科技发展有限公司 | 发光二极管管芯的基底结构体及制造基底结构体的方法 |
JP2006245379A (ja) * | 2005-03-04 | 2006-09-14 | Stanley Electric Co Ltd | 半導体発光素子 |
US20070045640A1 (en) | 2005-08-23 | 2007-03-01 | Erchak Alexei A | Light emitting devices for liquid crystal displays |
US7411225B2 (en) * | 2005-03-21 | 2008-08-12 | Lg Electronics Inc. | Light source apparatus |
JP2006269912A (ja) * | 2005-03-25 | 2006-10-05 | Matsushita Electric Ind Co Ltd | 発光素子及びその製造方法 |
KR100631976B1 (ko) * | 2005-03-30 | 2006-10-11 | 삼성전기주식회사 | 3족 질화물 발광 소자 |
EP1708283A1 (en) * | 2005-04-02 | 2006-10-04 | Lg Electronics Inc. | Light source apparatus and fabrication method thereof |
US7244630B2 (en) * | 2005-04-05 | 2007-07-17 | Philips Lumileds Lighting Company, Llc | A1InGaP LED having reduced temperature dependence |
KR100691264B1 (ko) | 2005-07-20 | 2007-03-12 | 삼성전기주식회사 | 수직구조 질화물 반도체 발광소자 |
JP2007035990A (ja) * | 2005-07-28 | 2007-02-08 | Kyocera Corp | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
JP4963807B2 (ja) * | 2005-08-04 | 2012-06-27 | 昭和電工株式会社 | 窒化ガリウム系化合物半導体発光素子 |
SG130975A1 (en) * | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
CN100375303C (zh) * | 2005-10-27 | 2008-03-12 | 晶能光电(江西)有限公司 | 含有金锗镍的欧姆电极、铟镓铝氮半导体发光元件及制造方法 |
KR100721147B1 (ko) * | 2005-11-23 | 2007-05-22 | 삼성전기주식회사 | 수직구조 질화갈륨계 발광다이오드 소자 |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
JP2007201046A (ja) * | 2006-01-25 | 2007-08-09 | Kyocera Corp | 化合物半導体及び発光素子 |
JP2007214276A (ja) * | 2006-02-08 | 2007-08-23 | Mitsubishi Chemicals Corp | 発光素子 |
US7622746B1 (en) * | 2006-03-17 | 2009-11-24 | Bridgelux, Inc. | Highly reflective mounting arrangement for LEDs |
KR101198763B1 (ko) * | 2006-03-23 | 2012-11-12 | 엘지이노텍 주식회사 | 기둥 구조와 이를 이용한 발광 소자 및 그 형성방법 |
US7423297B2 (en) * | 2006-05-03 | 2008-09-09 | 3M Innovative Properties Company | LED extractor composed of high index glass |
US7501295B2 (en) * | 2006-05-25 | 2009-03-10 | Philips Lumileds Lighting Company, Llc | Method of fabricating a reflective electrode for a semiconductor light emitting device |
US7479466B2 (en) * | 2006-07-14 | 2009-01-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of heating semiconductor wafer to improve wafer flatness |
US8045595B2 (en) * | 2006-11-15 | 2011-10-25 | Cree, Inc. | Self aligned diode fabrication method and self aligned laser diode |
US7813400B2 (en) * | 2006-11-15 | 2010-10-12 | Cree, Inc. | Group-III nitride based laser diode and method for fabricating same |
KR100836494B1 (ko) * | 2006-12-26 | 2008-06-09 | 엘지이노텍 주식회사 | 반도체 발광소자 |
CN100403568C (zh) * | 2006-12-30 | 2008-07-16 | 武汉华灿光电有限公司 | 一种氮化镓基ⅲ-ⅴ族化合物半导体器件的电极 |
US8110425B2 (en) | 2007-03-20 | 2012-02-07 | Luminus Devices, Inc. | Laser liftoff structure and related methods |
JP2008288248A (ja) * | 2007-05-15 | 2008-11-27 | Hitachi Cable Ltd | 半導体発光素子 |
KR100872717B1 (ko) * | 2007-06-22 | 2008-12-05 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
US8441018B2 (en) | 2007-08-16 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Direct bandgap substrates and methods of making and using |
US11297705B2 (en) | 2007-10-06 | 2022-04-05 | Lynk Labs, Inc. | Multi-voltage and multi-brightness LED lighting devices and methods of using same |
US11317495B2 (en) | 2007-10-06 | 2022-04-26 | Lynk Labs, Inc. | LED circuits and assemblies |
JP5474292B2 (ja) * | 2007-11-06 | 2014-04-16 | シャープ株式会社 | 窒化物半導体発光ダイオード素子 |
US9024327B2 (en) | 2007-12-14 | 2015-05-05 | Cree, Inc. | Metallization structure for high power microelectronic devices |
JP2008103759A (ja) * | 2007-12-26 | 2008-05-01 | Matsushita Electric Ind Co Ltd | 発光素子 |
CN101499510B (zh) * | 2008-01-30 | 2011-06-22 | 富士迈半导体精密工业(上海)有限公司 | 半导体发光元件 |
KR100980649B1 (ko) * | 2008-05-20 | 2010-09-08 | 고려대학교 산학협력단 | 굴곡이 형성된 반사층을 포함하는 발광소자 및 그 제조방법 |
US7875534B2 (en) * | 2008-07-21 | 2011-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Realizing N-face III-nitride semiconductors by nitridation treatment |
US9293656B2 (en) * | 2012-11-02 | 2016-03-22 | Epistar Corporation | Light emitting device |
US8716723B2 (en) | 2008-08-18 | 2014-05-06 | Tsmc Solid State Lighting Ltd. | Reflective layer between light-emitting diodes |
US20100055479A1 (en) * | 2008-08-29 | 2010-03-04 | Caterpillar Inc. | Coating for a combustion chamber defining component |
CN102376841A (zh) * | 2008-12-22 | 2012-03-14 | 亿光电子工业股份有限公司 | 发光二极管结构及其制作方法 |
CN101752475B (zh) * | 2008-12-22 | 2012-06-20 | 亿光电子工业股份有限公司 | 发光二极管结构及其制作方法 |
TWI384660B (zh) * | 2009-01-23 | 2013-02-01 | Everlight Electronics Co Ltd | 發光二極體封裝結構及其製作方法 |
US8441108B2 (en) * | 2009-04-02 | 2013-05-14 | Panasonic Corporation | Nitride semiconductor element having electrode on m-plane and method for producing the same |
WO2010113238A1 (ja) * | 2009-04-03 | 2010-10-07 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
WO2010113237A1 (ja) * | 2009-04-03 | 2010-10-07 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
US20100327300A1 (en) * | 2009-06-25 | 2010-12-30 | Koninklijke Philips Electronics N.V. | Contact for a semiconductor light emitting device |
KR101041068B1 (ko) * | 2009-06-29 | 2011-06-13 | 주식회사 프로텍 | 서브 마운트 기판을 이용한 발광 다이오드 제조 방법 |
US8076682B2 (en) | 2009-07-21 | 2011-12-13 | Koninklijke Philips Electronics N.V. | Contact for a semiconductor light emitting device |
KR101081193B1 (ko) | 2009-10-15 | 2011-11-07 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101072034B1 (ko) | 2009-10-15 | 2011-10-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101014013B1 (ko) * | 2009-10-15 | 2011-02-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
JP4803302B2 (ja) * | 2009-12-17 | 2011-10-26 | 三菱化学株式会社 | 窒化物半導体発光素子 |
WO2011086620A1 (ja) * | 2010-01-18 | 2011-07-21 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
BR112012021243B1 (pt) * | 2010-02-26 | 2020-10-20 | Nichia Corporation | elemento de emissão de luz semicondutor de nitreto e método de fabricação do mesmo |
US8933543B2 (en) | 2010-04-02 | 2015-01-13 | Panasonic Intellectual Property Management Co., Ltd. | Nitride semiconductor element having m-plane angled semiconductor region and electrode including Mg and Ag |
KR101039879B1 (ko) * | 2010-04-12 | 2011-06-09 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
JP5693375B2 (ja) | 2010-05-28 | 2015-04-01 | シチズンホールディングス株式会社 | 半導体発光素子 |
CN102315354B (zh) * | 2010-06-29 | 2013-11-06 | 展晶科技(深圳)有限公司 | 发光二极管的封装结构 |
US9548286B2 (en) * | 2010-08-09 | 2017-01-17 | Micron Technology, Inc. | Solid state lights with thermal control elements |
KR101731056B1 (ko) | 2010-08-13 | 2017-04-27 | 서울바이오시스 주식회사 | 오믹 전극 구조체를 갖는 반도체 발광 소자 및 그것을 제조하는 방법 |
DE102010045784B4 (de) | 2010-09-17 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
JP5016712B2 (ja) * | 2010-09-21 | 2012-09-05 | 三井金属鉱業株式会社 | 電極箔および有機デバイス |
JP5592248B2 (ja) * | 2010-12-27 | 2014-09-17 | シャープ株式会社 | 窒化物半導体発光素子 |
JP4940363B1 (ja) * | 2011-02-28 | 2012-05-30 | 株式会社東芝 | 半導体発光素子及び半導体発光装置 |
JP2012204373A (ja) * | 2011-03-23 | 2012-10-22 | Toyoda Gosei Co Ltd | 半導体発光素子 |
CN102738331A (zh) * | 2011-04-08 | 2012-10-17 | 新世纪光电股份有限公司 | 垂直式发光二极管结构及其制作方法 |
CN103493225A (zh) | 2011-07-06 | 2014-01-01 | 松下电器产业株式会社 | 氮化物半导体发光元件及其制造方法 |
JP6077201B2 (ja) * | 2011-08-11 | 2017-02-08 | 昭和電工株式会社 | 発光ダイオードおよびその製造方法 |
CN102956791B (zh) * | 2011-08-18 | 2015-04-29 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
WO2013082609A1 (en) | 2011-12-02 | 2013-06-06 | Lynk Labs, Inc. | Color temperature controlled and low thd led lighting devices and systems and methods of driving the same |
US9818912B2 (en) | 2011-12-12 | 2017-11-14 | Sensor Electronic Technology, Inc. | Ultraviolet reflective contact |
WO2013090310A1 (en) | 2011-12-12 | 2013-06-20 | Sensor Electronic Technology, Inc. | Ultraviolet reflective contact |
JP5853672B2 (ja) * | 2011-12-22 | 2016-02-09 | 日亜化学工業株式会社 | GaN系半導体発光素子 |
JP5639626B2 (ja) | 2012-01-13 | 2014-12-10 | シャープ株式会社 | 半導体発光素子及び電極成膜方法 |
GB201202222D0 (en) * | 2012-02-09 | 2012-03-28 | Mled Ltd | Enhanced light extraction |
US9306124B2 (en) * | 2012-05-17 | 2016-04-05 | Epistar Corporation | Light emitting device with reflective electrode |
US9209356B2 (en) * | 2012-06-08 | 2015-12-08 | Epistar Corporation | Light-emitting element including a light-emitting stack with an uneven upper surface |
US9269662B2 (en) * | 2012-10-17 | 2016-02-23 | Cree, Inc. | Using stress reduction barrier sub-layers in a semiconductor die |
CN102956777B (zh) * | 2012-10-26 | 2015-07-15 | 江苏威纳德照明科技有限公司 | 具有界面绒化层的GaP基发光二极管及其制造方法 |
US9082935B2 (en) * | 2012-11-05 | 2015-07-14 | Epistar Corporation | Light-emitting element and the light-emitting array having the same |
US9536924B2 (en) | 2012-12-06 | 2017-01-03 | Seoul Viosys Co., Ltd. | Light-emitting diode and application therefor |
WO2014088201A1 (ko) * | 2012-12-06 | 2014-06-12 | 서울바이오시스 주식회사 | 발광 다이오드 및 그것의 어플리케이션 |
KR20140086624A (ko) * | 2012-12-28 | 2014-07-08 | 삼성전자주식회사 | 질화물 반도체 발광 소자 |
US10276749B2 (en) | 2013-01-09 | 2019-04-30 | Sensor Electronic Technology, Inc. | Ultraviolet reflective rough adhesive contact |
US9768357B2 (en) | 2013-01-09 | 2017-09-19 | Sensor Electronic Technology, Inc. | Ultraviolet reflective rough adhesive contact |
US9287449B2 (en) | 2013-01-09 | 2016-03-15 | Sensor Electronic Technology, Inc. | Ultraviolet reflective rough adhesive contact |
KR20140116574A (ko) * | 2013-03-25 | 2014-10-06 | 인텔렉추얼디스커버리 주식회사 | 발광소자 및 이의 제조방법 |
CN103178180A (zh) * | 2013-03-26 | 2013-06-26 | 合肥彩虹蓝光科技有限公司 | 低成本高导电率的新型金属电极垫片及其制备方法 |
JP6023660B2 (ja) * | 2013-05-30 | 2016-11-09 | スタンレー電気株式会社 | 半導体発光素子及び半導体発光装置 |
CN103594597B (zh) * | 2013-10-22 | 2016-09-07 | 溧阳市东大技术转移中心有限公司 | 一种发光器件上的叠层电极 |
TWI514628B (zh) * | 2013-10-24 | 2015-12-21 | Lextar Electronics Corp | 電極結構與具有電極結構的發光二極體結構 |
CN104681685A (zh) * | 2013-11-28 | 2015-06-03 | 亚世达科技股份有限公司 | 发光二极管装置及灯具 |
JP6252302B2 (ja) * | 2014-03-28 | 2017-12-27 | 日亜化学工業株式会社 | 発光装置の製造方法 |
CN104103733B (zh) * | 2014-06-18 | 2018-06-05 | 华灿光电(苏州)有限公司 | 一种倒装发光二极管芯片及其制造方法 |
KR20160029942A (ko) * | 2014-09-05 | 2016-03-16 | 삼성전자주식회사 | 반도체 발광소자 |
CN104409601A (zh) * | 2014-11-05 | 2015-03-11 | 扬州中科半导体照明有限公司 | 具有双反射层的倒装发光二极管芯片 |
KR102373677B1 (ko) | 2015-08-24 | 2022-03-14 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
JP2017054901A (ja) * | 2015-09-09 | 2017-03-16 | 豊田合成株式会社 | Iii族窒化物半導体発光装置とその製造方法 |
DE102015116855A1 (de) * | 2015-10-05 | 2017-04-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit einem Leiterrahmen mit einer Versteifungsstruktur |
US10043941B1 (en) * | 2017-01-31 | 2018-08-07 | International Business Machines Corporation | Light emitting diode having improved quantum efficiency at low injection current |
US11079077B2 (en) | 2017-08-31 | 2021-08-03 | Lynk Labs, Inc. | LED lighting system and installation methods |
KR102051477B1 (ko) * | 2018-02-26 | 2019-12-04 | 주식회사 세미콘라이트 | 반도체 발광소자의 제조방법 |
KR102624112B1 (ko) | 2018-10-23 | 2024-01-12 | 서울바이오시스 주식회사 | 플립칩형 발광 다이오드 칩 |
CN110034219A (zh) * | 2019-04-28 | 2019-07-19 | 福建兆元光电有限公司 | 发光二极管及其制造方法 |
CN111129251A (zh) * | 2019-12-30 | 2020-05-08 | 广东德力光电有限公司 | 一种高焊接性倒装led芯片的电极结构 |
CN111653653B (zh) * | 2020-06-17 | 2021-10-22 | 京东方科技集团股份有限公司 | 一种发光器件及其制作方法、显示面板 |
CN112768582B (zh) * | 2021-02-26 | 2022-03-25 | 南京大学 | 包含高反射n-GaN欧姆接触的倒装LED芯片及其制作方法 |
CN115172561A (zh) * | 2021-07-22 | 2022-10-11 | 厦门三安光电有限公司 | 发光二极管及其制备方法 |
Family Cites Families (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49149679U (zh) * | 1973-04-27 | 1974-12-25 | ||
CA1139412A (en) * | 1980-09-10 | 1983-01-11 | Northern Telecom Limited | Light emitting diodes with high external quantum efficiency |
US4510514A (en) * | 1983-08-08 | 1985-04-09 | At&T Bell Laboratories | Ohmic contacts for semiconductor devices |
JPH0670981B2 (ja) * | 1986-07-08 | 1994-09-07 | 三洋電機株式会社 | 電極形成方法 |
JPH0488684A (ja) * | 1990-08-01 | 1992-03-23 | Koito Mfg Co Ltd | Ledチップの電極構造 |
JP2871288B2 (ja) * | 1992-04-10 | 1999-03-17 | 日本電気株式会社 | 面型光半導体素子およびその製造方法 |
JPH0645651A (ja) * | 1992-05-22 | 1994-02-18 | Sanyo Electric Co Ltd | n型SiC用電極とその形成方法 |
JPH0669546A (ja) * | 1992-08-21 | 1994-03-11 | Asahi Chem Ind Co Ltd | 発光ダイオード |
US5578162A (en) * | 1993-06-25 | 1996-11-26 | Lucent Technologies Inc. | Integrated composite semiconductor devices and method for manufacture thereof |
JPH0738146A (ja) * | 1993-07-20 | 1995-02-07 | Victor Co Of Japan Ltd | 半導体発光装置 |
JP3627822B2 (ja) * | 1994-08-18 | 2005-03-09 | ローム株式会社 | 半導体発光素子、およびその製造方法 |
US5557115A (en) * | 1994-08-11 | 1996-09-17 | Rohm Co. Ltd. | Light emitting semiconductor device with sub-mount |
JP3198016B2 (ja) * | 1994-08-25 | 2001-08-13 | シャープ株式会社 | 発光ダイオードアレイ及びその製造方法 |
JP3057547B2 (ja) | 1995-04-12 | 2000-06-26 | 財団法人半導体研究振興会 | 緑色発光ダイオード |
JP3065509B2 (ja) * | 1995-06-02 | 2000-07-17 | スタンレー電気株式会社 | 表面実装型発光ダイオード |
US5625202A (en) * | 1995-06-08 | 1997-04-29 | University Of Central Florida | Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth |
GB2307104B (en) * | 1995-06-21 | 1999-12-29 | Rohm Co Ltd | Light-emiting diode chip and light-emitting diode using the same |
JP3333356B2 (ja) * | 1995-07-12 | 2002-10-15 | 株式会社東芝 | 半導体装置 |
JP3269070B2 (ja) * | 1995-10-30 | 2002-03-25 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
US5760423A (en) * | 1996-11-08 | 1998-06-02 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device, electrode of the same device and method of manufacturing the same device |
US5917202A (en) * | 1995-12-21 | 1999-06-29 | Hewlett-Packard Company | Highly reflective contacts for light emitting semiconductor devices |
US5977566A (en) * | 1996-06-05 | 1999-11-02 | Kabushiki Kaisha Toshiba | Compound semiconductor light emitter |
FR2750804B1 (fr) * | 1996-07-04 | 1998-09-11 | Alsthom Cge Alcatel | Procede de fabrication d'un laser a emission par la surface |
JP3504079B2 (ja) * | 1996-08-31 | 2004-03-08 | 株式会社東芝 | 半導体発光ダイオード素子の製造方法 |
US6268618B1 (en) * | 1997-05-08 | 2001-07-31 | Showa Denko K.K. | Electrode for light-emitting semiconductor devices and method of producing the electrode |
JPH118410A (ja) | 1997-06-18 | 1999-01-12 | Nichia Chem Ind Ltd | n型窒化物半導体の電極 |
KR100235994B1 (ko) * | 1997-07-10 | 1999-12-15 | 구자홍 | 발광 다이오드 및 그 제조방법 |
JP3257455B2 (ja) * | 1997-07-17 | 2002-02-18 | 松下電器産業株式会社 | 発光装置 |
JP3130292B2 (ja) * | 1997-10-14 | 2001-01-31 | 松下電子工業株式会社 | 半導体発光装置及びその製造方法 |
IL136394A0 (en) | 1997-11-27 | 2001-06-14 | Max Planck Gesellschaft | Identification and characterization of interacting molecules by automated interaction mating |
DE69839300T2 (de) * | 1997-12-15 | 2009-04-16 | Philips Lumileds Lighting Company, LLC, San Jose | Licht-emittierende Vorrichtung |
JPH11186613A (ja) * | 1997-12-19 | 1999-07-09 | Matsushita Electron Corp | 半導体発光装置 |
KR19990052640A (ko) * | 1997-12-23 | 1999-07-15 | 김효근 | 오믹접촉 형성을 이용한 다이오드용 금속박막및 그의 제조방법 |
JPH11220168A (ja) * | 1998-02-02 | 1999-08-10 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体素子及びその製造方法 |
JPH11229168A (ja) | 1998-02-17 | 1999-08-24 | Mitsubishi Heavy Ind Ltd | 過酸化水素発生装置 |
JP3582349B2 (ja) * | 1998-03-04 | 2004-10-27 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体素子 |
JP4183299B2 (ja) * | 1998-03-25 | 2008-11-19 | 株式会社東芝 | 窒化ガリウム系化合物半導体発光素子 |
JPH11298040A (ja) | 1998-04-10 | 1999-10-29 | Sharp Corp | 半導体発光素子及びその製造方法 |
DE19921987B4 (de) * | 1998-05-13 | 2007-05-16 | Toyoda Gosei Kk | Licht-Abstrahlende Halbleitervorrichtung mit Gruppe-III-Element-Nitrid-Verbindungen |
JP3736181B2 (ja) * | 1998-05-13 | 2006-01-18 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子 |
JP3785820B2 (ja) * | 1998-08-03 | 2006-06-14 | 豊田合成株式会社 | 発光装置 |
JP2000091638A (ja) * | 1998-09-14 | 2000-03-31 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
JP2000156527A (ja) * | 1998-11-19 | 2000-06-06 | Matsushita Electronics Industry Corp | 半導体発光装置 |
US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
JP3739951B2 (ja) * | 1998-11-25 | 2006-01-25 | 東芝電子エンジニアリング株式会社 | 半導体発光素子およびその製造方法 |
US6222207B1 (en) * | 1999-05-24 | 2001-04-24 | Lumileds Lighting, U.S. Llc | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip |
US6133589A (en) * | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
US6992334B1 (en) * | 1999-12-22 | 2006-01-31 | Lumileds Lighting U.S., Llc | Multi-layer highly reflective ohmic contacts for semiconductor devices |
JP2001217456A (ja) * | 2000-02-03 | 2001-08-10 | Sharp Corp | 窒化ガリウム系化合物半導体発光素子 |
US6586328B1 (en) * | 2000-06-05 | 2003-07-01 | The Board Of Trustees Of The University Of Illinois | Method to metallize ohmic electrodes to P-type group III nitrides |
JP4024994B2 (ja) * | 2000-06-30 | 2007-12-19 | 株式会社東芝 | 半導体発光素子 |
US6445007B1 (en) * | 2001-03-19 | 2002-09-03 | Uni Light Technology Inc. | Light emitting diodes with spreading and improving light emitting area |
JP2002368275A (ja) * | 2001-06-11 | 2002-12-20 | Toyoda Gosei Co Ltd | 半導体素子及びその製造方法 |
JP4055503B2 (ja) * | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
WO2005050748A1 (ja) * | 2003-11-19 | 2005-06-02 | Nichia Corporation | 半導体素子及びその製造方法 |
-
2000
- 2000-06-30 JP JP2000200298A patent/JP4024994B2/ja not_active Expired - Fee Related
-
2001
- 2001-06-08 TW TW090113954A patent/TW531902B/zh active
- 2001-06-27 US US09/893,925 patent/US20020014630A1/en not_active Abandoned
- 2001-06-29 CN CN200710159720A patent/CN100587985C/zh not_active Expired - Lifetime
- 2001-06-29 CN CNB2004100566398A patent/CN100459183C/zh not_active Expired - Lifetime
- 2001-06-29 EP EP01114891A patent/EP1168460A3/en not_active Withdrawn
- 2001-06-29 KR KR10-2001-0038299A patent/KR100469312B1/ko active IP Right Grant
- 2001-06-29 CN CNB011218460A patent/CN1196205C/zh not_active Expired - Lifetime
-
2003
- 2003-04-17 US US10/417,873 patent/US6825502B2/en not_active Expired - Lifetime
- 2003-09-29 KR KR10-2003-0067466A patent/KR100503907B1/ko active IP Right Grant
-
2004
- 2004-09-21 US US10/945,707 patent/US7179671B2/en not_active Expired - Lifetime
- 2004-09-22 US US10/946,668 patent/US7138664B2/en not_active Expired - Lifetime
- 2004-09-22 US US10/947,631 patent/US7135714B2/en not_active Expired - Lifetime
- 2004-09-22 US US10/946,787 patent/US7138665B2/en not_active Expired - Lifetime
- 2004-10-04 US US10/958,911 patent/US7221002B2/en not_active Expired - Lifetime
- 2004-10-04 US US10/958,910 patent/US20050056857A1/en not_active Abandoned
-
2005
- 2005-05-04 US US11/121,453 patent/US7355212B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101183699A (zh) | 2008-05-21 |
CN1591918A (zh) | 2005-03-09 |
KR20040010419A (ko) | 2004-01-31 |
US20030209720A1 (en) | 2003-11-13 |
US20050040420A1 (en) | 2005-02-24 |
KR20020003101A (ko) | 2002-01-10 |
US7135714B2 (en) | 2006-11-14 |
US7138665B2 (en) | 2006-11-21 |
US7138664B2 (en) | 2006-11-21 |
JP4024994B2 (ja) | 2007-12-19 |
KR100503907B1 (ko) | 2005-07-27 |
US7221002B2 (en) | 2007-05-22 |
US6825502B2 (en) | 2004-11-30 |
US20050056857A1 (en) | 2005-03-17 |
CN100587985C (zh) | 2010-02-03 |
CN1330416A (zh) | 2002-01-09 |
JP2002026392A (ja) | 2002-01-25 |
US20020014630A1 (en) | 2002-02-07 |
US7179671B2 (en) | 2007-02-20 |
CN100459183C (zh) | 2009-02-04 |
US20050218419A1 (en) | 2005-10-06 |
KR100469312B1 (ko) | 2005-02-02 |
US20050040423A1 (en) | 2005-02-24 |
TW531902B (en) | 2003-05-11 |
US20050051786A1 (en) | 2005-03-10 |
US20050035363A1 (en) | 2005-02-17 |
EP1168460A3 (en) | 2006-10-11 |
EP1168460A2 (en) | 2002-01-02 |
US7355212B2 (en) | 2008-04-08 |
US20050037527A1 (en) | 2005-02-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1196205C (zh) | 半导体发光元件 | |
CN1674313A (zh) | 固态元件和固态元件装置 | |
CN1292494C (zh) | 发光半导体元件及其制造方法 | |
US6869820B2 (en) | High efficiency light emitting diode and method of making the same | |
US7268372B2 (en) | Vertical GaN light emitting diode and method for manufacturing the same | |
CN1269229C (zh) | 半导体发光器件及其制造方法 | |
CN100352042C (zh) | 封装件及其制造方法 | |
US8581295B2 (en) | Semiconductor light-emitting diode | |
CN1263170C (zh) | 氮化物基化合物半导体发光元件及其制造方法 | |
CN1476108A (zh) | 半导体发光元件,其制造方法及安装方法 | |
CN1759491A (zh) | 半导体发光元件及其制造方法 | |
CN1367540A (zh) | GaN基Ⅲ-Ⅴ族氮化物发光二极管及其制造方法 | |
CN1619850A (zh) | 半导体发光元件及其制造方法 | |
CN1870312A (zh) | 制造发光二极管的方法 | |
CN1866561A (zh) | 发光器件封装及其制造方法 | |
CN1750284A (zh) | 半导体元件及其制造方法和电子部件单元 | |
CN1677780A (zh) | 半导体激光器装置和它的制造方法 | |
CN1858921A (zh) | 倒装芯片发光二极管及其制造方法 | |
KR100638825B1 (ko) | 수직구조 반도체 발광 소자 및 그 제조 방법 | |
CN1816952A (zh) | 氮化物半导体发光器件及其制造方法 | |
CN1610197A (zh) | 半导体激光器件 | |
CN104916771A (zh) | 一种换衬底的正装GaN基发光二极管及其制备方法 | |
KR101172950B1 (ko) | 그라파이트 기반의 발광다이오드용 기판 및 이를 이용한 발광다이오드 | |
CN1655372A (zh) | 半导体发光器件及其制造方法 | |
CN1761079A (zh) | 光发射装置和光发射元件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Toshiba Corp. Address before: Kanagawa Patentee before: Toshiba Corp. |
|
CP02 | Change in the address of a patent holder | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180710 Address after: Tokyo, Japan Patentee after: Toshiba Electronic Devices & Storage Corporation Address before: Tokyo, Japan Patentee before: Toshiba Corp. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20180912 Address after: Gyeonggi Do, South Korea Patentee after: SAMSUNG ELECTRONICS Co.,Ltd. Address before: Tokyo, Japan Patentee before: Toshiba Electronic Devices & Storage Corporation |
|
TR01 | Transfer of patent right | ||
CX01 | Expiry of patent term |
Granted publication date: 20050406 |
|
CX01 | Expiry of patent term |