CN1217034C - 具有改进的处理流体流的处理腔的工件处理装置 - Google Patents
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Abstract
本发明提供一种在对微电子工件的至少一个表面进行浸入处理过程中用于提供处理流体流的处理容器(610)。该处理容器包括一个向所述工件的至少一个表面提供处理流体流的主流体流动腔(505)和多个向主流体流动腔提供处理流体流的喷口(535)。所述多个喷口布置成可提供竖直和径向流体流分量，这些流体流分量可联合形成径向流过工件表面的大致均匀的法向流体流分量。本发明还提供一种使用这种处理容器的典型装置，该装置特别适合于进行电镀处理。另外，本发明还提供一种在微电子工件浸入处理过程中用于将流体从主流体流动腔排出的改进的排出通道(640)。
Description
【相关的申请】
本申请要求以下美国申请的优先权：
1999年4月13日申请的题为“WORKPIECE PROCESSOR HAVINGIMPROVED PROCESSING CHAMBER”的美国专利申请60/129055(代理号：SEM4492P0830US)；
1999年7月12日申请的题为“WORKPIECE PROCESSOR HAVINGIMPROVED PROCESSING CHAMBER”的美国专利申请60/143769(代理号：SEM4492P0831US)；
2000年2月14日申请的题为“WORKPIECE PROCESSOR HAVINGIMPROVED PROCESSING CHAMBER”的美国专利申请60/182160(代理号：SEM4492P0832US)；
【背景技术】
由微电子工件例如半导体晶片、聚合物基片等来制造微电子元件是一种多工艺步骤的制造过程。就本申请的目的而言，微电子工件包括由基片形成的工件，微电子电路或元件、数据存储元件或层和/或微观机械元件形成于该基片上。
对微电子工件要进行多种不同的加工处理才能制造出微电子元件。这种处理包括材料镀覆、图案成型、掺杂、化学机械抛光、电抛光和热处理。材料镀覆处理是在工件表面上镀覆薄的材料层。图案成型是将这些添加的层中的选定部分除去。微电子工件的掺杂是将杂质作为“掺杂物”掺入到微电子工件的选定部分中，从而来改变基片材料的电性能。微电子工件的热处理是加热和/或冷却微电子工件从而获得特定的处理效果。化学机械抛光是一种通过化学/机械联合处理来去除材料的过程，而电抛光是利用电化学反应来将材料从工件表面上去除掉。
人们利用多种处理装置作为加工“设备”来进行前述的加工过程。这些设备根据加工的工件种类和设备所执行的工艺步骤的不同而具有不同的结构。其中一种加工设备是可从Semitool，Inc.，of Kalispell，Montana购买的Equinox(R)湿法加工设备，其包括一个或多个工件处理装置，该处理装置利用工件夹持装置和处理槽或容器来实现湿法加工。这种湿法加工包括电镀、浸蚀加工、清洗、化学镀层和电抛光等。
按照前述的Equinox(R)设备的一种结构，工件夹持装置和处理容器相互靠近地进行设置，工件夹持装置夹持住微电子工件使其与构成处理腔的处理容器中的处理流体相接触。将处理流体约束到工件的适当部分通常是一个难解的问题。另外，保证处理流体和工件表面之间进行适当的物质传递也是非常困难的。由于缺少这种物质传递控制，因此，工件表面的处理通常是不均匀的。
普通的工件处理装置采用各种不同的技术以可控的方式使处理流体与工件表面接触。例如，利用可控喷射装置使处理流体与工件表面相接触。在其它形式的处理过程中，例如：部分或全部浸入处理过程中，将处理流体保留在处理槽中，并使工件的至少一个表面与处理流体表面接触或置于处理流体表面下方。电镀、化学镀层、浸蚀加工、清洗和阳极氧化等都属于部分或全部浸入处理。
现有的处理容器通常将处理流体连续流通过设置在处理腔底部的一个或多个入口引入到处理腔中。通过在上述的一个或多个入口与工件表面之间设置一个扩散器或类似部件，就可使处理流体在工件表面上均匀分布以便来控制扩散层的厚度和均匀度。图1A就示出了这样的一种装置。扩散器1包括多个孔2，孔2将从处理流体入口3流入的处理流体流尽可能均匀地分配到工件4的表面。
尽管通过采用扩散器可使对扩散层的控制得到提高，但这种控制是有限的。如图1A所示，虽然有扩散器1，但垂直于微电子工件表面的提高了流速的局部区域5仍然存在。这些局部区域通常与扩散器1的孔2的位置相对应。当扩散器1靠近微电子工件4时，允许处理流体从扩散器到工件流动分配的距离减小，这种效果就得以加强。这种减小的分配距离使得处理流体流更加集中在局部区域5。
本发明人已经发现工件表面上提高了流速的这些局部区域会影响扩散层的状态，并会使工件表面的处理不均匀。与工件表面的其它区域相比，扩散层在局部区域5的厚度趋于更薄。表面反应快速地在扩散层厚度减小的局部区域发生，因此而导致对工件径向处理得不均匀。扩散器的孔型结构也会影响电化学处理如电镀过程中的电场分布，并可导致对工件表面处理得不均匀(例如，不均匀地镀覆电镀材料)。
通常在对工件进行浸入处理的过程中所遇到的另一个问题是由于夹带的气泡使扩散层在工件表面受到破坏。气泡会在处理装置的管路和泵送系统中形成并进入处理腔，在此，气泡移动并留在所处理的工件表面上。在这些位置处由于扩散层被破坏，因而使所进行的处理受到妨碍。
由于微电子电路和装置的制造商减小了他们所制造的元件和电路的尺寸，因此，对处理流体和工件表面之间的扩散层条件进行严格控制就显得尤为迫切。为此，本发明人已提供了一种改进的处理腔，使在微电子制造工业所普遍使用的工件处理设备中存在的扩散层不均匀和紊乱分布的现象得到改善。尽管下面是结合用于电镀的具体实施例对改进的处理腔进行描述的，但显然这种改进的处理腔可用于任何的需要对工件表面进行均匀处理的工件处理设备。
【发明内容】
本发明提供一种在对微电子工件的至少一个表面进行浸入处理过程中用于形成处理流体流的处理容器。该处理容器包括一个向所述工件的至少一个表面提供处理流体流的主流体流动腔和多个向主流体流动腔提供处理流体流的喷口。所述多个喷口布置成可提供竖直和径向流体流分量，这些流体流分量可联合形成径向流过工件表面的大致均匀的法向流体流分量。本发明还提供一种使用这种处理容器的典型装置，该装置尤其适合于进行电化学处理，例如电镀处理。
根据本发明的另一个方面，提供一种用于对微电子工件进行浸入处理的反应器，该反应器包括一个处理容器，所述处理容器具有一个处理流体入口，处理流体经该入口流入处理容器中。处理容器还具有一个形成溢流件的上缘，处理流体从溢流件上方流出处理容器。至少一个螺旋流动腔设置在处理容器的外部来接受从溢流件上方流出处理容器的处理流体。这种结构有助于使已用过的处理流体离开反应器，同时减小其离开过程中由于可能将空气混入流体流中的紊流或者使空气和处理流体之间产生不希望有的接触而带来的影响。
【附图说明】
图1A是浸入处理反应器组件的示意图，该反应器组件装有扩散器将处理流体流分配到工件表面上。
图1B是本发明反应器组件的一个实施例的横截面图。
图2是用于图1B所示反应器组件的反应器腔的一个实施例的示意图，其包括与流经反应器腔的处理流体流有关的速度流型图。
图3-5示出了整个处理腔组件的特殊结构，其特别适合于对半导体晶片进行电化学处理，并可实现图2所示的速度流型图。
图6和7示出了处理设备的两个实施例，该处理设备可装有一个或多个本发明的处理装置。
【具体实施方式】
〖基本的反应器部件〗
图1B示出了用于对微电子工件25如半导体晶片进行浸入处理的反应器组件20。通常，反应器组件20由反应器头部30和对应的处理基部37构成，处理流体装在处理基部37中。图示实施例的反应器组件特别适合于对半导体晶片或类似的工件进行电化学处理。但图1B所示的反应器结构也适合于对其它类型的工件进行处理以及适合于其它的处理。
反应器组件20的反应器头部30由固定组件70和转子组件75构成。转子组件75可接受和承载有关的微电子工件25，将微电子工件定位于处理基部37的处理容器内的处理侧的下方位置处，并使工件转动或旋转。由于图示实施例是适合于电镀的，因此，转子组件75还包括一个可向微电子工件表面提供电镀电能的阴极触点组件85。但显然，可用反应器头部30上的后侧触点和/或工件支承装置来代替图示的前侧触点/支承装置。
反应器头部30通常安装在提升/旋转装置上，该装置成形为可使反应器头部30从面向上布置旋转到面向下布置，向上布置时反应器头部可接受待电镀的微电子工件，向下布置时待电镀的微电子工件表面就得以定位，从而与处理基部37的处理容器内的处理流体接触。机械手最好包括一个端部操纵装置，机械手通常用于将微电子工件25放置在转子组件75上就位，并将电镀完的微电子工件从转子组件中取出。在装载微电子工件过程中，触点组件85可在打开状态和闭合状态下工作，在打开状态，可允许将微电子工件放置到转子组件75上，而在闭合状态，可将微电子工件固定在转子组件上以便进行后面的处理。在电镀反应器中，这还使触点组件85的导电部件与待电镀的微电子工件表面电接触。
显然，上述的结构仅仅是一种示例，本发明的反应器腔也可与其它的反应器组件结构一起使用。
〖处理容器〗
图2示出了处理基部37的基本结构以及由处理容器结构得出的相应的流速图。如图所示，处理基部37通常包括主流体流动腔505、前腔510、流体入口515、流入腔520、将流入腔520与前腔510隔离开的扩散器525和将流入腔520与主流体流动腔505隔离开的喷口/孔口组件530。这些部件相互配合以便在微电子工件25上形成流体流(这里是电镀液)，该流体流具有大致为径向的独立法向分量。在图示实施例中，碰撞液流以中心线537为中心，并具有一个垂直于微电子工件25表面的大致均匀的分量。这使得微电子工件表面形成大致均匀的物质流量，进而可对微电子工件进行大致均匀的处理。
处理流体通过设置在容器35底部的流体入口515供入。从流体入口515流入的流体以较大的流速由此通过前腔510。在图示实施例中，前腔510包括加速通道540，处理流体通过加速通道540从流体入口515径向流向前腔510的流体流动区545。流体流动区545的大致呈倒U形的截面在靠近流量扩散器525的出口区域宽于其位于加速通道540附近的入口区域。这种截面的变化有助于在处理流体进入主流体流动腔505之前将处理流体中的气泡除去。可使以其它方式进入主流体流动腔505的气泡通过设置在前腔510上部的气体出口(在图2中未示出，但在图3-5所示的实施例中予以示出)流出处理基部37。
前腔510内的处理流体最终供应给主流体流动腔505。为此，处理流体首先从前腔510的相对高压区550通过流量扩散器525流向低压流入腔520。喷口组件530包括相对于水平方向略微倾斜地设置的多个喷口或孔口535。处理流体在具有竖直和径向流体速度分量的方向经喷口535流出流入腔520。
主流体流动腔505在其上部区域由轮廓侧壁560和倾斜侧壁565进行限定。在处理流体流出喷口535(具体的是最上部的喷口)而向上流向微电子工件25的表面时，轮廓侧壁560有助于避免流体流的分离。在超过转折点570后，流体流的分离基本上就不会影响正常流体流的均匀性。因此，倾斜侧壁565通常可以是包括轮廓侧壁560的连续形状在内的任何形状。在此描述的实施例中，侧壁565是倾斜的，且在涉及电化学处理的场合，其可用于支承一个或多个阳极/导电体。
处理流体从主流体流动腔505经基本上环形的出口572流出。从环形出口572流出的流体可提供给另一个外腔进行处理，或者通过处理流体供应系统进行循环补充。
在处理基部37构成电镀反应器部件的情况下，处理基部37还设有一个或多个阳极。在图示实施例中，中心阳极580设置在主流体流动腔505的下部。如果微电子工件25的表面周缘沿径向延伸到轮廓侧壁560的范围以外，周缘就与中心阳极580电屏蔽，并在那些区域减弱了电镀。但是，如果希望在周缘区域进行电镀，就要在周缘区域附近使用一个或多个另外的阳极。这里，在倾斜侧壁565上以大致同心的方式设置多个环形阳极585，以便向周边区域提供电镀电流。另一种实施方式包括从轮廓侧壁到微电子工件周边没有进行屏蔽的一个或多个阳极。
可以各种不同的方式向阳极580和585提供电镀电能。例如，相同或不同量级的电镀电能可多路传输给阳极580和585。可选择地，全部的阳极580和585可连接在一起从相同的电源接受相同量级的电镀电能。而且，每个阳极580和585可连接在一起接受不同量级的电镀电能来补偿电镀膜电阻的变化。阳极585靠近微电子工件25进行设置的优点是可对由每个阳极所产生的径向电镀膜的生成进行高度的控制。
当处理流体循环流过处理装置时，气体就会夹带到处理流体中。这些气体可形成气泡，气泡最终会到达扩散层，并影响工件表面处理的均匀性。为解决这一问题，也为了降低气泡进入主流体流动腔505的可能性，处理基部37包括多个独特的结构。对于中心阳极580，在中心阳极580的下侧和加速通道540的相对低压区域之间形成文氏管(Venturi)流动通道590。除了影响沿中心线537的流动效果以外，该通道还产生Venturi效应使得位于腔下部的表面例如中心阳极580表面附近的处理流体被吸进加速通道540，并可协助将气泡从阳极表面除去。更为显著的是，Venturi效应可沿中心线537在微电子工件表面中部形成影响碰撞液流均匀性的吸流。类似地，处理流体沿径向流过位于腔上部的表面例如阳极585的表面而流向环形出口572，从而将这些表面上所存在的气泡除去。另外，微电子工件表面上的流体流的径向分量有助于将气泡从其表面上除去。
图示经过反应器腔的流体流具有很多的优点。如图所示，流经喷口/孔口535的流体流离开微电子工件表面，因而不会产生局部的法向流体流动分量来扰乱扩散层的均匀度。尽管扩散层可能不是完全均匀的，但任何的不均匀都是较为平缓的。另外，在微电子工件转动的情况下，扩散层中保留的这种不均匀性通常是可以允许的，并可始终如一地实现处理目标。
由前述反应器结构可知，垂直于微电子工件的流体流在靠近微电子工件中心处的量值较大。当微电子工件不存在时(也就是，在微电子工件没入流体之前)，就形成一个圆顶形弯液面。圆顶形的弯液面有助于使微电子工件没入处理液时所夹带的气泡最少。
由Venturi流动通道产生的主流体流动腔505底部的流体流会影响其中心线处的流体流。中心线处的流速难于实现和控制。但是，Venturi流的强度提供了一种可用于影响流体流这一方面的不干涉结构变化。
前述反应器结构的另一个优点是可协助避免那些进入腔口的气泡到达微电子工件。为此，流动的方式是这样的，即处理液恰好在进入主腔之前向下运动。因此，气泡就保留在前腔并经顶部的孔逸出。另外，通过利用盖住Venturi流动通道的遮护装置(见图3-5所示反应器实施例的描述)就可避免气泡经Venturi流动通道而进入主腔。而且，向上倾斜到前腔的入口通道(见图5和相应的说明书)可避免气泡经Venturi流动通道而进入主腔。
图3-5示出了特别适合于对半导体微电子工件进行电化学处理的整个处理腔组件610的特殊结构。具体的说，图示实施例特别适合于利用电镀技术在工件表面镀上一层均匀的材料层。
如图所示，图1B所示的处理基部37由处理腔组件610和相应的外部杯形件605构成。处理腔组件610设置在外部杯形件605内，从而使外部杯形件605可接收从处理腔组件610溢流出的用过的处理流体。法兰615围绕组件610延伸以便于与相应的加工设备支架相固定。
特别参见图4和5所示，外部杯形件605的法兰可制成接触或接纳反应器头部30的转子组件75(如图1B所示)，并使微电子工件25和处理液如电镀液在主流体流动腔505中相接触。外部杯形件605还包括一个主圆筒形壳体625，排放杯形件627设置在主圆筒形壳体625中。排放杯形件627包括一个具有槽道629的外表面，槽道629与主圆筒形壳体625的内壁面一起构成一个或多个可用作处理液出口的螺旋流动腔640。在处理杯形件35顶部的溢流件739溢流出的处理流体经螺旋流动腔640排出，并从出口(未示出)流出，在此对处理液进行处理或进行补充和回流。这种结构特别适合于包括回流流体的系统，这是因为它有助于减少气体与处理液的混合，并进而降低气泡对工具表面扩散层均匀性影响的可能性。
在图示实施例中，前腔510由多个分离部件的壁面限定而成。更具体的说，前腔510由排放杯形件627、阳极支承件697的内壁、中腔构件690的内壁和外壁以及流量扩散器525的外壁限定而成。
图3B和4示出了前述部件组合在一起构成反应器的方式。为此，中腔构件690设置在排放杯形件627的内部，并包括多个支承在其底壁上的支腿692。阳极支承件697包括一个与围绕排放杯形件627内部设置的法兰相接触的外壁。阳极支承件697还包括一个支承在流量扩散器525的上部并与其相接触的槽705和另一个支承在喷口组件530的上缘并与其相接触的槽710。中腔构件690还包括一个设置在中部的储槽715，储槽的尺寸设计成可容纳喷口组件530的底部。类似地，在环形储槽715的径向外部设有环形槽725，以便于与流量扩散器525的下部相接触。
在图示实施例中，流量扩散器525形成为一个单独的部件并包括多个竖直槽670。类似地，喷口组件530也形成为一个单独的部件并包括多个构成喷口535的水平槽。
阳极支承件697包括多个环形槽，其尺寸设计成可容纳相应的环形阳极组件785。每个阳极组件785包括一个阳极585(最好由镀铂的钛或其它不活泼金属制成)和一个从阳极585中部伸出的导管730，金属导体穿过导管730设置并使每个组件785的阳极585与外部电源电接触。导管730整个穿过处理腔组件610延伸，并通过相应的装配件733固定在处理腔组件610的底部。在此结构中，阳极组件785可有效地向下推阳极支承件697，以便将流量扩散器525、喷口组件530、中腔构件690和排放杯形件627夹紧在外部杯形件605的底部737。这使得处理腔610便于组装和拆卸。但也可利用其它装置来将腔的各个部件固定在一起并使阳极与电源相导通。
图示实施例还包括一个溢流件739，溢流件739可拆卸地咬住或用其它方式方便地固定到阳极支承件697的上侧外部。如图所示，溢流件739包括构成溢流装置的凸缘742，处理液从溢流装置上方流入螺旋流动腔640。溢流件739还包括一个横向延伸的法兰744，法兰744径向向内延伸并构成一个位于一个或多个阳极585中全部或部分上方的电场屏罩。由于溢流件739可便于拆卸和更换，处理腔组件610可很方便地重新配置并适于提供不同的电场构型。这种不同的电场构型特别适合于必须要将反应器构造成可处理超过一种尺寸或形状的工件的场合。另外，这使得反应器可设置成适合于处理具有相同尺寸但具有不同电镀面积要求的工件。
在相应位置上的阳极585的阳极支承件697构成图2所示的轮廓侧壁560和倾斜侧壁565。如上所述阳极支承件697的下部区域轮廓确定了前腔510的上侧内壁，并最好包括一个或多个穿过其设置的气体出口665，以便将气泡从前腔510排到外部环境中。
特别参见图5所示，流体入口515由一个流入流体导引装置810限定而成，流入流体导引装置810通过一个或多个紧固件815固定在中腔构件690上。流入流体导引装置810包括多个开槽817，开槽817可将流体入口515接纳的流体引导到中腔构件690下方区域中。图示实施例的槽817由向上倾斜的壁819限定而成。流出槽817的处理流体从此流向由向上倾斜的壁同样限定而成的一个或多个另外的槽821。
中心阳极580包括一个电连接杆581，电连接杆581穿过在喷口组件530、中腔构件690和流入流体导引装置810上所形成的中心孔延伸到处理腔组件610的外部。图2所示的Venturi流动通道区域590在图5中由穿过排放杯形件627和喷口组件530的底壁的竖直槽823构成。如图所示，流入流体导引装置810和向上倾斜的壁819径向延伸到屏蔽的竖直槽823以外，从而使进入入口的任何气泡通过向上的槽821而不是竖直槽823流出。
可方便地将前述反应器组件组合成一个可对工件例如半导体微电子工件进行多种加工的加工设备。这样的一种加工设备是可从Semitool，Inc.，of Kalispell，Montana购买到的LT-210TM电镀装置。图6和7示出了这种组合装置。图6所示的装置包括多个处理装置1610。最好，这些处理装置包括一个或多个清洗/干燥装置和一个或多个电镀装置(包括一个或多个上述的电镀反应器)，尽管也可使用本发明的浸入化学处理装置。该装置最好还包括一个热处理装置1615，该热处理装置包括至少一个适合于进行快速热处理(RTP)的热反应器。
利用一个或多个可沿中央轨道1625直线运动的机械传送机构1620来在处理装置1610和RTP装置1615之间传送工件。一个或多个处理装置1610还装有适合于进行就地清洗的装置。最好，所有的处理装置以及机械传送机构都设置在一个装有处于正压状态的过滤空气的机壳中，从而可限制可能会降低微电子工件处理有效性的空气中的悬浮杂质。
图7示出了加工设备的另一个实施例，其中，RTP装置1635设置在部分1630中，其包括至少一个热反应器，并可组合成一个加工装置机组。与图6所示实施例不同的是，在该实施例中，至少一个热反应器由专用机械手机构1640进行操纵。专用机械手机构1640接受由机械传送机构1620传送来的工件。传送可通过一个中间集结待运门/区域1645来进行。因此，就可卫生地将处理设备的RTP部分1630与处理设备的其它部分分离开。另外，利用这种结构，图示的退火热处理装置可形成一个单独的组件来固定并提高现有装置机组的质量。除了RTP装置1635以外或者替代RTP装置1635，其它类型的处理装置也可设置在部分1630处。
在不脱离上述根本教导的基础上，可对前述系统进行多种改进。尽管上面结合一个或多个具体实施例对本发明进行了详细的描述，但显然，在不脱离本发明范围和宗旨的情况下，本领域技术人员可作出多种的变型。
Claims (13)
1.一种微电子工件的电化学处理装置，其包括：
头部组件，所述头部组件具有工件支承装置，所述工件支承装置包括具有多个电触点的触点组件，所述多个电触点构造成与工件的圆周部分接合；
处理腔，具有位于第一高度的溢流件，溢流件构造成限定一个电化学处理溶液流的表面高度，以处理工件的表面；
在处理腔中的第一电极，在处理腔中的第二电极，第二电极与第一电极同心，和在处理腔中的绝缘体结构，其中绝缘体结构的一部分位于低于溢流件的第一高度的第二高度，且位于第一和第二电极之间；以及
溢出收集器，设在处理腔的外部来接收从溢流件上方流出的处理溶液。
2.根据权利要求1所述的装置，其中，还包括多个喷口，所述喷口设置成向溢流件提供处理液流，其中，喷口被构造成提供垂直的和径向的流动分量，所述分量结合产生基本上均匀的法向流动分量、径向地横过所述工件的表面。
3.根据权利要求2所述的装置，其中，所述多个喷口中的至少几个喷口大致为水平的孔口。
4.根据权利要求1所述的装置，其中，所述第一电极包括第一圆形导电部件，且第二电极包括第二圆形导电部件，第二圆形导电部件与第一圆形导电部件同心。
5.根据权利要求4所述的装置，其中，第一圆形导电元件包括盘，第二圆形导电部件包括导电环。
6.根据权利要求4所述的装置，其中，第一圆形导电部件包括第一导电环，而第二圆形导电部件包括第二导电环。
7.根据权利要求1所述的装置，其中，还包括在工件支承装置和至少一个电极之间的场屏蔽，其中场屏蔽构造成将至少工件的一部分与一个电极的至少一部分屏蔽开。
8.根据权利要求7所述的装置，其中，所述场屏蔽包括与工件支承装置的圆周部分对准的圆环。
9.根据权利要求7所述的装置，其中，所述场屏蔽包括相对于处理腔的中心轴横向延伸的凸缘。
10.根据权利要求7所述的装置，其中，所述场屏蔽包括在外电极的一部分上方向内延伸的水平凸缘。
11.根据权利要求1所述的装置，其中，所述第一和第二电极相对彼此是可独立操作的。
12.根据权利要求1所述的装置，其中，绝缘体结构包括电极支承件，其构造成机械地支撑第一和第二电极。
13.根据权利要求1所述的装置，其中，绝缘体结构包括中心开孔，中心开孔提供流体流动路径，电化学处理溶液通过所述流体流动路径向上流向溢流件。
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2001
- 2001-03-12 US US09/804,697 patent/US6660137B2/en not_active Expired - Lifetime
- 2001-03-12 US US09/804,696 patent/US6569297B2/en not_active Expired - Lifetime
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2003
- 2003-03-26 US US10/400,186 patent/US7267749B2/en not_active Expired - Lifetime
- 2003-11-18 US US10/715,700 patent/US20040099533A1/en not_active Abandoned
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2004
- 2004-10-28 US US10/975,266 patent/US20050224340A1/en not_active Abandoned
- 2004-10-28 US US10/975,551 patent/US20050167265A1/en not_active Abandoned
- 2004-10-28 US US10/975,738 patent/US20050109625A1/en not_active Abandoned
- 2004-10-28 US US10/975,202 patent/US20050109633A1/en not_active Abandoned
- 2004-10-28 US US10/975,843 patent/US20050109629A1/en not_active Abandoned
- 2004-10-28 US US10/975,154 patent/US7566386B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105463537A (zh) * | 2016-01-14 | 2016-04-06 | 深圳市启沛实业有限公司 | 一种新型单面电镀冶具 |
| CN105463537B (zh) * | 2016-01-14 | 2017-11-21 | 深圳市启沛实业有限公司 | 一种单面电镀方法 |
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