CN1227659A - 稳定的多晶硅电阻器和制造它的方法 - Google Patents
稳定的多晶硅电阻器和制造它的方法 Download PDFInfo
- Publication number
- CN1227659A CN1227659A CN97197118A CN97197118A CN1227659A CN 1227659 A CN1227659 A CN 1227659A CN 97197118 A CN97197118 A CN 97197118A CN 97197118 A CN97197118 A CN 97197118A CN 1227659 A CN1227659 A CN 1227659A
- Authority
- CN
- China
- Prior art keywords
- resistor
- fluorine atom
- fluorine
- concentration
- main body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE96023957 | 1996-06-17 | ||
SE9602395A SE511816C3 (sv) | 1996-06-17 | 1996-06-17 | Resistor innefattande en resistorkropp av polykristallint kisel samt foerfarande foer framstaellning av en saadan |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1227659A true CN1227659A (zh) | 1999-09-01 |
CN1134792C CN1134792C (zh) | 2004-01-14 |
Family
ID=20403046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB971971188A Expired - Fee Related CN1134792C (zh) | 1996-06-17 | 1997-06-17 | 稳定的多晶硅电阻器和制造它的方法 |
Country Status (11)
Country | Link |
---|---|
US (2) | US6140910A (zh) |
EP (1) | EP0932907B1 (zh) |
JP (1) | JP2000512807A (zh) |
KR (1) | KR100363667B1 (zh) |
CN (1) | CN1134792C (zh) |
AU (1) | AU3281697A (zh) |
CA (1) | CA2258506A1 (zh) |
DE (1) | DE69734456T2 (zh) |
SE (1) | SE511816C3 (zh) |
TW (1) | TW491411U (zh) |
WO (1) | WO1997049103A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100372028C (zh) * | 2003-10-24 | 2008-02-27 | 上海宏力半导体制造有限公司 | 半导体电阻元件及其制造方法 |
CN100388463C (zh) * | 2005-01-27 | 2008-05-14 | 国际商业机器公司 | 制造精密含硅电阻器的方法 |
CN102110593A (zh) * | 2010-12-15 | 2011-06-29 | 无锡中微晶园电子有限公司 | 一种提高多晶硅薄膜电阻稳定性的方法 |
CN103515195A (zh) * | 2012-06-26 | 2014-01-15 | 台湾积体电路制造股份有限公司 | 衬底电阻器及其制造方法 |
CN104517811A (zh) * | 2013-10-08 | 2015-04-15 | 英飞凌科技股份有限公司 | 用于生产多晶硅电阻器的方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE513116C2 (sv) | 1998-11-13 | 2000-07-10 | Ericsson Telefon Ab L M | Polykiselresistor och sätt att framställa sådan |
JP2001060668A (ja) * | 1999-07-01 | 2001-03-06 | Intersil Corp | 抵抗温度係数の小さい抵抗器(TCRL)による改善されたBiCMOSプロセス |
US6532568B1 (en) * | 2000-10-30 | 2003-03-11 | Delphi Technologies, Inc. | Apparatus and method for conditioning polysilicon circuit elements |
KR100767540B1 (ko) * | 2001-04-13 | 2007-10-17 | 후지 덴키 홀딩스 가부시끼가이샤 | 반도체 장치 |
US6732422B1 (en) * | 2002-01-04 | 2004-05-11 | Taiwan Semiconductor Manufacturing Company | Method of forming resistors |
JP2005217454A (ja) * | 2004-01-27 | 2005-08-11 | Sanyo Electric Co Ltd | 固体撮像装置 |
US20070096260A1 (en) * | 2005-10-28 | 2007-05-03 | International Business Machines Corporation | Reduced parasitic and high value resistor and method of manufacture |
US9012313B2 (en) * | 2013-03-15 | 2015-04-21 | Globalfoundries Inc. | Semiconductor device including a resistor and method for the formation thereof |
DE102015206175A1 (de) * | 2015-04-07 | 2016-10-13 | Globalfoundries Inc. | Halbleiterbauelement mit Dünnschicht-Widerstand |
JP6939497B2 (ja) * | 2017-12-13 | 2021-09-22 | 富士電機株式会社 | 抵抗素子 |
JP7267786B2 (ja) * | 2019-03-13 | 2023-05-02 | エイブリック株式会社 | 半導体装置の製造方法 |
JP7275884B2 (ja) | 2019-06-13 | 2023-05-18 | 富士電機株式会社 | 抵抗素子及びその製造方法 |
US11676961B2 (en) * | 2020-11-01 | 2023-06-13 | Texas Instruments Incorporated | Semiconductor device with low noise transistor and low temperature coefficient resistor |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4740478A (en) * | 1987-01-30 | 1988-04-26 | Motorola Inc. | Integrated circuit method using double implant doping |
SE466078B (sv) * | 1990-04-20 | 1991-12-09 | Ericsson Telefon Ab L M | Anordning vid en skaerm hos en integrerad krets och foerfarande foer framstaellning av anordningen |
JPH0555470A (ja) * | 1991-08-26 | 1993-03-05 | Ricoh Co Ltd | 集積回路の製造方法 |
US5212108A (en) * | 1991-12-13 | 1993-05-18 | Honeywell Inc. | Fabrication of stabilized polysilicon resistors for SEU control |
SE504969C2 (sv) * | 1995-09-14 | 1997-06-02 | Ericsson Telefon Ab L M | Polykiselresistor och förfarande för framställning av en sådan |
TW319911B (en) * | 1996-11-25 | 1997-11-11 | Mos Electronics Taiwan Inc | Manufacturing method of resistor by using contact hole with high aspect ratio |
-
1996
- 1996-06-17 SE SE9602395A patent/SE511816C3/sv not_active IP Right Cessation
-
1997
- 1997-06-17 US US08/877,059 patent/US6140910A/en not_active Expired - Fee Related
- 1997-06-17 JP JP10502803A patent/JP2000512807A/ja not_active Ceased
- 1997-06-17 DE DE69734456T patent/DE69734456T2/de not_active Expired - Fee Related
- 1997-06-17 WO PCT/SE1997/001071 patent/WO1997049103A1/en active IP Right Grant
- 1997-06-17 AU AU32816/97A patent/AU3281697A/en not_active Abandoned
- 1997-06-17 CA CA002258506A patent/CA2258506A1/en not_active Abandoned
- 1997-06-17 EP EP97928598A patent/EP0932907B1/en not_active Expired - Lifetime
- 1997-06-17 CN CNB971971188A patent/CN1134792C/zh not_active Expired - Fee Related
- 1997-06-17 KR KR10-1998-0710363A patent/KR100363667B1/ko not_active IP Right Cessation
- 1997-06-28 TW TW090208966U patent/TW491411U/zh not_active IP Right Cessation
-
2000
- 2000-09-20 US US09/665,670 patent/US6313728B1/en not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100372028C (zh) * | 2003-10-24 | 2008-02-27 | 上海宏力半导体制造有限公司 | 半导体电阻元件及其制造方法 |
CN100388463C (zh) * | 2005-01-27 | 2008-05-14 | 国际商业机器公司 | 制造精密含硅电阻器的方法 |
CN102110593A (zh) * | 2010-12-15 | 2011-06-29 | 无锡中微晶园电子有限公司 | 一种提高多晶硅薄膜电阻稳定性的方法 |
CN103515195A (zh) * | 2012-06-26 | 2014-01-15 | 台湾积体电路制造股份有限公司 | 衬底电阻器及其制造方法 |
CN103515195B (zh) * | 2012-06-26 | 2016-08-31 | 台湾积体电路制造股份有限公司 | 衬底电阻器及其制造方法 |
CN104517811A (zh) * | 2013-10-08 | 2015-04-15 | 英飞凌科技股份有限公司 | 用于生产多晶硅电阻器的方法 |
US9634081B2 (en) | 2013-10-08 | 2017-04-25 | Infineon Technologies Ag | Methods for producing polysilicon resistors |
Also Published As
Publication number | Publication date |
---|---|
CA2258506A1 (en) | 1997-12-24 |
SE511816C3 (sv) | 2000-01-24 |
US6313728B1 (en) | 2001-11-06 |
CN1134792C (zh) | 2004-01-14 |
EP0932907A1 (en) | 1999-08-04 |
SE9602395D0 (sv) | 1996-06-17 |
JP2000512807A (ja) | 2000-09-26 |
EP0932907B1 (en) | 2005-10-26 |
WO1997049103A1 (en) | 1997-12-24 |
KR20000016756A (ko) | 2000-03-25 |
KR100363667B1 (ko) | 2003-05-12 |
TW491411U (en) | 2002-06-11 |
DE69734456D1 (de) | 2005-12-01 |
SE511816C2 (sv) | 1999-11-29 |
DE69734456T2 (de) | 2006-07-06 |
US6140910A (en) | 2000-10-31 |
AU3281697A (en) | 1998-01-07 |
SE9602395L (sv) | 1997-12-18 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER OWNER: ELLISON TELEPHONE CO., LTD. Effective date: 20040827 |
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Effective date of registration: 20040827 Address after: Munich, Germany Patentee after: Infennian Technologies AG Address before: Stockholm Patentee before: Ericsson Telephone AB |
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