CN1227738C - 包括led和荧光led的混合白光源 - Google Patents

包括led和荧光led的混合白光源 Download PDF

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CN1227738C
CN1227738C CNB008033366A CN00803336A CN1227738C CN 1227738 C CN1227738 C CN 1227738C CN B008033366 A CNB008033366 A CN B008033366A CN 00803336 A CN00803336 A CN 00803336A CN 1227738 C CN1227738 C CN 1227738C
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light
led
luminescent system
emitting diode
diode
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CN1355936A (zh
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T·M·马沙
M·D·帕斯利
S·赫尔曼
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Koninklijke Philips NV
Signify Holding BV
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • H01L33/504Elements with two or more wavelength conversion materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S362/00Illumination
    • Y10S362/80Light emitting diode

Abstract

一种用于产生白光的混合发光系统,包括至少一个发光二极管和一个荧光发光二极管。该混合发光系统比使用发光二极管或荧光发光二极管产生白光的传统发光系统具有改善的性能。特别是,本发明的混合发光系统通过改变发光二极管的颜色和数目和/或荧光发光二极管的荧光材料,可设置和优化不同发光系统的重要性能参数。

Description

包括LED和荧光LED的混合白光源
技术领域
本发明涉及用以产生白光的LED(LED)发光系统,特别是涉及由LED和荧光(phosphor-)LED组成的用于产生白光的混合LED发光系统。该混合发光系统比使用LED或荧光LED产生白光的传统发光系统具有改善的性能。
背景技术
用于产生白光的传统LED发光系统通常由LED或荧光LED组成。使用LED的发光系统通过红、绿、蓝光(色)LED的各种组合来产生白光。基于荧光LED的发光系统利用蓝光LED顶部的一种或多种发光的荧光材料,将所发射的一部分蓝光转化为波长更长的光,从而产生白光。
使用LED产生白光的发光系统在封装状态(package level)下,发光效率要优于使用荧光LED的发光系统。但在基于LED的发光系统中难以获得高质量的白色光。这是因为,为使整个发光系统的性能和制造达到最优,所制造的LED通常必须组合在不需要的大量LED芯片中,以便能提供在全额定功率下工作时所需的红、绿、蓝光的光量。此外,LED芯片必须制成各种不同的尺寸以获得适当的平衡,这就增加了系统的生产成本。由于可用相同的AlInGaN工艺生产绿光和蓝光LED芯片,所以将这些芯片作成同样大小并具有适当大的尺寸,则在制造和降低成本方面是有益的。
基于LED的发光系统还有其它一些局限性。现有的工作于约550nm理想光谱波长的绿光LED效率很低。而发光效率最高的绿光LED工作于波长约530nm的较低理想光谱波长。另外,目前可得到的高效LED难以实现良好的彩色再现。获得良好的彩色再现是可能的,但在具体LED的选择方面存在局限性。
另外,通过LED混合产生白光会造成材料浪费,特别是会造成效率浪费。更具体地说,许多高度校准的混合方案是二元的,即每次将两种LED相混合。基于LED的发光系统通常使用三个或四个LED,这就需要进行两级混合。不幸的是,由于每一级混合都有效率损失,从而显著降低了系统的性能。
如前面所述,同基于LED的发光系统相比,利用基于荧光LED的发光系统更容易产生白光,因为荧光LED无须混合(它们在本质上就是混合的)并且材料消耗低。但是,在封装状态下其发光效率比基于LED的发光系统降低一半,这是由量子缺陷和再发射效率引起的。
发明内容
因此,就需要这样一种发光系统,它能够结合基于LED和荧光LED的发光系统的某些方面来实现优于任何一种系统的有益结果。
一种用于产生白光的发光系统,该系统包括:至少一个第一LED和一个荧光LED,该荧光LED邻近所述的至少一个第一LED设置,通过使所述至少一个第一发光二极管与所述荧光发光二极管混合发出光而产生白光。
附图说明
通过下面结合附图详细描述的示例性实施例,本发明的优点、特性及其它一些特征将变得更为清楚:
图1A是本发明的发光系统中用到的一种典型LED的截面图;
图1B是本发明的发光系统中用到的一种典型荧光LED的截面图;
图2是描述本发明的发光系统的第一实施例的示意图;
图3是描述本发明的发光系统的第二实施例的示意图;
图4是描述本发明的发光系统的第三实施例的示意图;
图5是描述本发明的发光系统的第四实施例的示意图。
应当理解,这些图仅用于说明本发明的构思,而并不是按实际比例画出的。
具体实施方式
本发明的混合发光系统一般由一个或多个特定的LED和一个荧光LED选择性组合构成,用以产生白光,该荧光LED由一个蓝光LED和至少一种发射特定光谱波长(颜色)的光的荧光材料组成。
图1A是本发明中用到的一种典型的LED 10的示意图。此LED 10通常用标准的AlInGaN或AlInGaP工艺制造,并且包括一个LED芯片11,LED芯片11安装在填充有透明的环氧树脂13的反射金属盘或反射器12中。
图1B是本发明中用到的一种典型的荧光LED 14的示意图。此LED 14与图1A中的LED结构基本相同,其区别只是填充反射器16的环氧树脂18中包含均匀混合的一种或多种发光的荧光材料的颗粒19。荧光颗粒19可将LED芯片15发射的一部分光转化为不同波长的光。
本发明的混合发光系统的主要优点是允许通过改变LED的颜色和数目和/或荧光LED的荧光材料,来设置和优化不同发光系统的重要性能参数。尤其是,本发明的系统通过平衡红、绿、蓝光成分,可设置和获得更高的每个芯片的流明数平均值;平衡时的更少LED总数;改善的彩色再现;通过荧光LED实现的更高效率的混合。这又有利于利用标准AlInGaN和AlInGaP工艺下制造的LED芯片生产对于多种应用最佳的多种类型的产品。
下面的每个实施例阐述了如何使用本发明中的混合发光系统获得上面提到的一个或多个性能优点。图2是描述本发明的混合发光系统的第一实施例的示意图,该系统用数字20表示。该系统20包括一个红光LED 22和一个荧光LED24,其中,红光LED 22发射光谱波长约610nm的光,LED 24由一个发射光谱波长约在450nm和470nm之间的光的蓝光LED和一种能将部分(通常约50%)蓝光转化为绿光(光谱波长约为550nm)的荧光材料组成。本发明的系统的这个实施例可提供合理的功率平衡,并且系统的整体效率可与传统的基于LED的发光系统相比或更高,这是因为该系统未采用在传统的基于LED的发光系统中用到的发光效率低的绿光LED(它通常发射光谱波长约为530nm的光)(由于荧光LED比绿光LED芯片的光更接近550nm范围,因此其效率更高,即具有更高的每瓦流明数)。此外,该实施例中系统20的两个LED 22、24较容易混合,效率更高,并且与通常使用三个或四个LED的传统发光系统相比,其LED驱动电路较简单。更具体地讲,有多种混合LED的方案。事实上,在所有这些方案中,都希望尽量少的混合。例如在二元混合方案中,只需要一级混合即可将系统20中的LED 22、24混合,而在传统的基于LED的系统中需要两级混合。因此,利用本系统的这个实施例,由混合引起的损失大约只有传统的基于LED的发光系统的一半。因此,与传统的基于LED的发光系统相比,在本系统的这个实施例中显著提高了系统的整体效率。由于荧光LED 24提供了550nm的光,彩色再现是充分的,尽管色点只能沿一条线来调整。结果,只能在设计点上进行色温控制。但本发明的该实施例特别适用于在低成本发光系统应用中产生固定的白光,在这些应用中希望LED驱动电路成本较低,并且对色温进行全面控制不是很重要的。
图3是描述本发明的混合发光系统的第二实施例的示意图,该系统用数字30表示。该系统30包括一个红光LED 32(发射光谱波长约610nm的光)、一个绿光LED 34(发射光谱波长约530nm的光)和一个荧光LED 36,其中荧光LED36由一个蓝光LED(发光波长约在450nm和470nm之间)和一种能将所发射的部分(约50%)蓝光转化为红光(波长约610nm)的荧光材料组成。与通常产生不足量的红光和过量的蓝光的基于LED的传统发光系统相比,在本发明的系统的这个实施例中所用的荧光LED 36补偿了红光输出的不足,并减少了蓝光的输出,从而仅用三个LED就获得了良好的色彩平衡。彩色再现和色温控制可与基于LED的传统发光系统相比。特别是,使用三个LED可获得最大的发光强度,同时还可对色温进行自由调整,因为荧光LED 36的红光成分很少,使得仅通过调节驱动电流来增加或减小三个LED的亮度就可达到平衡。
图4是描述本发明的混合发光系统的第三实施例的示意图,该系统用数字40表示。该系统40包括两个红光LED 42、44(发射约610nm的光)、一个绿光LED 46(发射约530nm的光)和一个荧光LED 48,其中荧光LED 48由一个蓝光LED(发射波长约在450nm和470nm之间的光)和一种能将部分蓝光转化为绿光(光谱波长约550nm)的荧光材料组成。由于荧光材料具有约50%的能量转换效率,荧光LED 48产生足够量的蓝光和绿光,这样由于存在550nm的光,在设计点可获得良好的平衡和彩色再现。另外,在系统的这个实施例中,由于550nm光的光强很高,即使考虑荧光材料的能量转化损失,仍可获得较高的输出光强度。
图5是描述本发明的混合发光系统的第四实施例的示意图,该系统用数字50表示。系统50与第三实施例的系统基本相同,它包括两个红光LED52和54、一个绿光LED56以及一个发射蓝光及绿光的荧光LED58。但两个红光LED52、54发光的光谱波长略有差别(分别为约610nm和约595nm)。在约595nm发光的红光LED产生类似于菊黄-淡黄色的红色,进一步改善了彩色再现。
本发明的混合发光系统的第五实施例(图中未示出)与第三实施例的系统基本相同,它包括两个红光LED、一个绿光LED以及一个荧光LED。不过,荧光LED由一个蓝光LED组成,该蓝光LED带有第一荧光材料和第二荧光材料,第一荧光材料发射光谱波长约为550nm的光,以将一部分蓝光转化为绿光,第二荧光材料将未由第一荧光材料转化的剩余蓝光的一部分转化为淡黄色或黄绿色光。这个实施例进一步改善了彩色再现,因此可用于需要最强彩色再现的应用中。
本发明的混合发光系统的第六实施例(图中未示出)结合了第四实施例和第五实施例的特征,它包括第一红光LED(发射约610nm的光)、第二红光LED(发射约595nm的光)、一个绿光LED(发射约530nm的光)和一个荧光LED。该荧光LED包括一个蓝光LED(发射波长在约450nm和约470nm之间的光)、第一荧光材料(发射光谱波长约550nm,用以将一部分蓝光转化为绿光)以及第二荧光材料(将未由第一荧光材料转化的剩余蓝光的一部分转化为淡黄色或黄绿色光)。这个实施例特别适合用于需要优化彩色再现的应用中。
由上述实施例可看出,荧光发光二极管发射至少两种不同颜色的光,所述至少两种颜色中的一种颜色与由所述发光二极管中的至少一个的发光颜色基本相同。
尽管已参照上述实施例描述了本发明,但在不脱离本发明的精神的情况下,可作出多种修改和变化。因此,所有这些修改和变化都应视为属于所附权利要求书的范围。

Claims (17)

1.一种用于产生白光的发光系统(20,30,40,50),该系统包括:
至少一个第一发光二极管(22;32,34;42,44,46;52,54,56);和
一个荧光发光二极管(24,36,48,58),它邻近所述的至少一个第一发光二极管(22;32,34;42,44,46;52,54,56)设置,
通过使所述至少一个第一发光二极管(22;32,34;42,44,46;52,54,56)与所述荧光发光二极管(24,36,48,58)混合发出光而产生白光。
2.按照权利要求1的发光系统(20,30,40,50),其中,荧光发光二极管(24,36,48,58)发射至少两种不同颜色的光。
3.按照权利要求1的发光系统(20,30,40,50),还至少包括第二发光二极管。
4.按照权利要求3的发光系统(20,30,40,50),其中,荧光发光二极管(24,36,48,58)发射至少两种不同颜色的光,所述至少两种颜色中的一种颜色与由所述第一或第二发光二极管的发光颜色基本相同。
5.按照权利要求3的发光系统(20,30,40,50),其中,第一发光二极管(22;32,34;42,44,46;52,54,56)和第二发光二极管发射的光具有相同的总体颜色,但该第一和第二发光二极管具有不同的光谱波长。
6.按照权利要求1的发光系统(20,30,40,50),还包括第二和第三发光二极管。
7.按照权利要求6的发光系统(20,30,40,50),其中,由三个发光二极管中的两个发射的光具有相同的总体颜色,但具有不同的光谱波长。
8.按照权利要求7的发光系统(20,30,40,50),其中,荧光发光二极管(24,36,48,58)发射至少三种不同颜色的光。
9.按照权利要求6的发光系统(20,30,40,50),其中,所述荧光发光二极管(24,36,48,58)的芯片发射至少三种不同颜色的光。
10.按照权利要求6的发光系统(20,30,40,50),其中,荧光发光二极管(24,36,48,58)发射至少两种不同颜色的光。
11.按照权利要求1的发光系统(20,30,40,50),其中,所述第一发光二极管(22;32,34;42,44,46;52,54,56)发射红光。
12.按照权利要求11的发光系统(20,30,40,50),还至少包括发射绿光的第二发光二极管。
13.按照权利要求12的发光系统(20,30,40,50),还包括发射红光的第三发光二极管。
14.按照权利要求13的发光系统(20,30,40,50),其中,第一发光二极管发射的红光的光谱波长与第三发光二极管发射的红光的光谱波长不同。
15.按照权利要求13的发光系统(20,30,40,50),其中,荧光发光二极管(24,36,48,58)至少发射第三种不同颜色的光,这种颜色选自淡黄色和黄绿色。
16.按照权利要求14的发光系统(20,30,40,50),其中,荧光发光二极管(24,36,48,58)至少发射第三种不同颜色的光,这种颜色选自淡黄色和黄绿色。
17.按照权利要求11的发光系统(20,30,40,50),其中,荧光发光二极管(24,36,48,58)至少发射第三种不同颜色的光,这种颜色选自淡黄色和黄绿色。
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CN1355936A (zh) 2002-06-26
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