CN1262528A - 通过去除衬底来制备铟铝镓氮光发射器 - Google Patents

通过去除衬底来制备铟铝镓氮光发射器 Download PDF

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CN1262528A
CN1262528A CN99126436.3A CN99126436A CN1262528A CN 1262528 A CN1262528 A CN 1262528A CN 99126436 A CN99126436 A CN 99126436A CN 1262528 A CN1262528 A CN 1262528A
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C·C·科曼
小F·A·基希
M·R·克拉梅斯
P·S·马丁
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of group III and group V of the periodic system
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    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341Intra-cavity contacts
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    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
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    • HELECTRICITY
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    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Abstract

描述了制备InAlGaN光发射器件的设备和技术,其方法是由蓝宝石生长衬底去除光发射层。在数个实施方案中,描述了制备垂直InAlGaN光发射二极管结构的技术,这种结构可以提高性能和或降低成本。此外,还利用了金属键合、衬底剥离、和新颖的RIE器件隔离技术,以高效地在根据其导热率和制备的难易程度来选择的衬底上制备垂直GaN LED。

Description

通过去除衬底来制备铟铝镓氮光发射器
本发明一般地涉及半导体光发射器件领域,特别是涉及一种制备高效、廉价的InAlGaN器件的方法。
已经证明,因为其在外延生长工艺的高温氨气氛中具有稳定性,蓝宝石是生长高效InAlGaN光发射器件的优选衬底。然而,蓝宝石是导热性很差的电绝缘体,使器件的设计不同寻常,而且效率很低。生长在蓝宝石上的典型LED结构具有两个顶层电接触和一个在p接触上扩展电流的半透明金属层。这与标准垂直结构不同,在标准结构中电流是在导电衬底上生长的LED中流动,例如在GaAs或GaP中,一个电接触位于半导体器件的顶面,另一个位于底面。在基于蓝宝石的LED上的两个顶层接触减少了器件的可用发光面积。
此外,p型InAlGaN层的低导电率致使需要半透明金属层,以便在p型半导电层上扩展电流。蓝宝石的折射率(n~1.7)也低于在其上生长的InAlGaN层(n~2.2-2.6)。因此,折射率的失配(蓝宝石的较低)在起吸收作用的半透明p面电流扩展金属和蓝宝石之间形成光波导。这使得半透明金属层对商用InAlGaN器件产生的光线吸收10-70%。
晶片键合分为两个基本类型:直接晶片键合和金属晶片键合。在直接晶片键合中,两个晶片通过键合界面上的物质交换键合在一起。直接晶片键合可以在半导体、氧化物和绝缘材料的任意组合之间进行。键合通常是在高温(>400℃)和单向压力下进行的。Kish等人在美国专利5,502,316中描述了一种合适的直接晶片键合技术。在金属晶片键合中,金属层淀积在两个键合衬底之间使之粘结。该金属层可用作与有源器件、衬底或两者的欧姆接触。金属键合的一个例子是倒装键合,这是一种在微电子和光电子工业中用来将器件倒装在衬底上的技术。因为倒装键合改善了器件的散热性能,衬底的去除取决于器件的结构,传统上对金属键合层的唯一要求是导电和机械牢固。
垂直腔光电结构包括有源区,它由置于搀杂、未搀杂或包含p-n结的限制层之间的光发射层构成。该结构还至少包含一个在垂直于光发射层的方向上形成F-P腔的反射镜。在GaN/InXAlYGaZN/AlXGa1-XN(其中x+y+z=0.5)材料系中制备垂直腔光电结构提出了与其它III-V族材料系不同的挑战。困难的是生长出具有高光学品质的InXAlYGaZN结构。电流扩展是InXAlYGaZN器件的主要问题。电流在p型材料中的横向扩展比n型材料小30倍。此外,衬底的低热导率增加了器件设计的复杂性,这是因为为了获得最佳的散热,器件应当p面向下安装。
一种垂直腔光电结构,例如垂直腔面发射激光器(VCSEL),需要高质量的反射镜,例如99.5%的反射率。获得高质量反射镜的一种方法是利用半导体生长技术。为了达到适用于VCSEL的分布式布拉格反射器(DBRs)所需的高反射率(>99%),对于半导体InXAlYGaZN DBR的生长存在一些非常关键的材料问题,包括裂纹和搀杂剂的融合。这些反射镜需要多个组份交替改变的铟铝镓氮化物(INXALYGAZN/InX,AlY,GaZ,N)的周期/层面。与半导体DBR相比,介质DBR(D-DBR)在InXAlYGaZN材料系所覆盖的光谱范围内相对容易实现超过99%的反射率。这些反射镜通常是通过蒸发或溅射技术淀积的,但也可以使用MBE(分子束外延)和MOCVD(金属有机物化学气相淀积)。然而,除非去除主衬底,否则有源区只有一面能够接触D-DBR淀积层。如果可以将D-DBR键合和/或淀积在InXAlYGaZN有源区的两面上,那么制备InXAlYGaZN垂直腔光电结构将变得很容易。
在“Low threshold,wafer fused long wavelength verticalcavity lasers”中,Applied Physics Letters,64卷,1994年12期,1463-1465页,Dudley等人讲述了将AlAs/GaAs半导体DBR直接晶片键合到垂直腔结构的一面,而在“Room-TemperatureContinuous-Wave Operation of 1.430μm Vertical-CavityLasers”中,IEEE Photnoics Technolory Letters,1995年11月7卷、11卷,Babic等人讲述了将半导体DBR直接晶片键合到InAlGaNVCSEL的两面,以利用在AlAs/GaAs之间的大折射率变化。如将要描述的,将D-DBR晶片键合到InXAlYGaZN比半导体之间的晶片键合更复杂,在现有技术中还没有出现过。
在“Diellectrically-Banded Long Wavelength Vertical CavityLaser on GaAs Substrates Using Strain-Compensated MultipleQuantum Wells”,IEEE Photnoics Technology Letters,vol.5,no.12 1994年11月,Chua等人发表了利用旋涂(spin-on)玻璃层将AlAs/GaAs半导体DBR连接到InGaAsP激光器的报道。旋涂玻璃并不适合于在VCSEL中的有源层和DBR之间进行键合,因为很难精确地控制旋涂玻璃的厚度,因此,将无法精确地进行VCSEL腔所需的层控制。此外,旋涂玻璃的性质是非均匀的,这将导致腔散射和其它损耗。
利用AlxGa1-xN/GaN材料对生长具有适合于VCSEL的反射率,例如大于99%的半导体DBR反射镜是困难的。反射率的理论计算表明,为了实现高反射率,需要高折射率对比,这只有通过提高低折射率AlxGa1-xN层中的Al组份和/或包含更多的层周期(材料特性来自于Ambacher等人,MRS Internet Journal of Nitride Semiconductorresearch,2(22)1997)来实现。这两种方法均具有极强的挑战性。如果电流流过DBR层,那么DBR具有导电性是很重要的。为了充分地导电,AlxGa1-xN层必需是充分掺杂的。除非Al组份对于Si(n型)掺杂降低到50%,对于Mg(p型)掺杂降低到17%,否则掺杂剂不会充分地融合。然而,利用Al组份较低的层来实现足够高的反射率所需的层周期数需要总厚度较大的AlxGa1-xN材料,这加大了外延层破裂的危险性,降低了组份控制力。实际上,图1所示的Al.30Ga.70N/GaN叠层已经有2.5μm厚,但远远不能满足VCSEL所需的反射率。这样,基于这种层对的高反射率DBR需要的总厚度远大于2.5μm,并且对于给定的AlN和GaN生长温度差,难以可靠地生长。尽管在层是未掺杂的条件下破裂不是一个主要问题,但是组份控制和AlN/GaN的生长温度仍将是生长高反射率DBR的巨大挑战。因此,即使在不需要DBR导电的应用中,也还没有出现利用InxAlyGazN材料系制备的反射率大于99%的反射镜叠层。因此,介质DBR反射镜是优选的。
半导体器件在晶片上同时成千上万地制备。晶片在封装之前必需切割成独立的小片。如果利用蓝宝石作为生长衬底,那么必需减薄和切割蓝宝石衬底。蓝宝石的硬度和六方晶体结构使得切割操作既困难又昂贵。
在本发明中,描述了制备InAlGaN光发射器件的设备和技术,其方法是由蓝宝石生长衬底去除光发射层。在数个实施方案中,描述了制备垂直InAlGaN光发射二极管结构的技术,这种结构可以提高性能和/或降低成本。此外,还利用了金属键合、衬底剥离、和新颖的RIE器件隔离技术,以高效地在根据其导热率和易于制备来选择的衬底上制备垂直GaN LED或垂直腔面发射激光器(VCSEL)。
图1示出InAlGaN光发射器件的优选实施方案,其键合层包括与InAlGaN异质结的欧姆接触层和与主衬底的粘结层。
图2示出InAlGaN光发射器件的优选实施方案,其键合层包括与InAlGaN异质结的欧姆接触层和与导电主衬底的欧姆接触层。
图3示出InAlGaN光发射器件的优选实施方案,其相对的分布式布拉格反射器(DBR)反射镜叠在光发射层的两个面上,形成垂直腔器件。键合层包括与InAlGaN异质结的欧姆接触层和与导电主衬底的欧姆接触层。
图4A-D示出切割InAlGaN光发射器件的优选实施方案。在图4A中,将生长在蓝宝石衬底上的InAlGaN层覆以欧姆接触层和键合层。在图4B中,主衬底在去除蓝宝石衬底之前与InAlGaN层键合。在图4C中,通过对InAlGaN器件进行台面刻蚀界定InAlGaN器件。在图4D中,最后通过切割主衬底将器件分离。
本发明考虑制备垂直导电InAlGaN光发射器件,其中与InAlGaN器件层的欧姆接触位于InAlGaN器件层的相对面上,即顶面和底面。
图1示出了本发明的一个优选结构。开始,InAlGaN光发射器件20生长在牺牲生长衬底30上,例如蓝宝石。生长的结构具有外露的p型层20a。反射欧姆接触18淀积在p型InAlGaN层20a的顶面。然后,利用置于InAlGaN光发射层20和主衬底12之间的键合层16将InAlGaN结构键合到主衬底12。键合层16的材料应当能够提供较强的机械键合,并且导电。通常,键合层包括多个层,淀积在InAlGaN器件层上的第一键合层16a和淀积在主衬底上的第二键合层16b。键合层16是利用现有技术中已知的任何方法淀积的,例如电子束蒸发、溅射和电子镀。键合之后,利用本领域众知的衬底去除技术中的一种除去牺牲蓝宝石生长衬底30,例如对牺牲层进行激光熔化、机械抛光和化学刻蚀。然后,对InAlGaN层进行图形化、刻蚀和连接,以制备电注入光发射器件。键合层用作低阻抗电流扩展层、与p-InAlGaN层的欧姆接触层和与主衬底的粘结层。
图2示出了另一个优选实施方案。类似于图1,InAlGaN光发射器件层生长在要去除的衬底30上,反射欧姆接触18淀积在外露的p型层20a上。现在,InAlGaN结构20+18通过键合层16与导电主衬底12键合。该衬底可以是半导体、绝缘体或金属。在半导体衬底情况下,键合层必需靠近衬底24a或包括与衬底24a的欧姆接触层,第二欧姆接触施加在与键合界面24b相对的衬底面上。在与主衬底粘结之后,去除牺牲生长衬底,n型欧姆接触22提供给n-InAlGaN层。结果,完成了垂直导电InAlGaN光发射器件。该器件由于半导体或金属主衬底的低电阻率而具有优异的电流扩展性,使得正向电压很低和电光转换效率很高。此外,因为器件顶面只有一个欧姆接触,在制备器件的第二个欧姆接触的过程中没有去除器件的任何有源区,所以与商用器件的40%相比,高于75%的可用有源区保留下来,用于光发射。
图3示出了另一个优选实施方案。在这种情况下,DBR反射镜叠层26a以及p面欧姆接触18淀积在p-InAlGaN层20a上。反射镜叠层包括一种或多种下述材料:绝缘体、半导体和金属。结构通过向主衬底12提供粘结和向p面欧姆接触金属18提供电接触的键合层16与主衬底12键合。键合层16的材料和厚度在粘结主衬底的过程中不应损害DBR反射镜叠层的反射率。在除去牺牲生长衬底30之后,第二DBR反射镜叠层26b淀积在InAlGaN垂直腔光电结构的与第一反射镜叠层26a相对的面上。任选的第二反射镜叠层26b经图形化、刻蚀,为n型欧姆接触22提供面积。对于垂直腔面发射激光器,反射镜必需具有非常高的反射率,大于99%。对于谐振腔LED,可以放宽对反射镜的反射率的要求(大于60%)。第一和第二衬底欧姆接触24a、24b形成了垂直导电器件。
图4示出了制备InAlGaN光发射器件的优选方法。图4a示出生长在生长衬底30之上、且在p型InAlGaN层的顶面上淀积有反射欧姆银接触18的InAlGaN光发射层20a和20b。银是优选的p型欧姆接触,因为它对InAlGaN光发射器件发射出的典型光波长具有很高的反射率,并且与p型InAlGaN的接触阻抗很低。另外,对于利用非蓝宝石生长衬底的n型层生长的InAlGaN层,铝是一种较好的欧姆金属,因为它不仅在InAlGaN器件发射的典型可见光波长范围内具有高反射率,而且还能与n型InAlGaN形成极好的欧姆接触。上面的器件结构示出了一个具有第一24a和第二24b欧姆接触以便于垂直导电的低阻抗主衬底12。键合层16a可以淀积在第一衬底欧姆接触的顶面。第二键合层16可以任选地淀积在p面欧姆接触18的顶面,以便于后续步骤中的机械加强金属晶片键合。在图4b中,主衬底是通过键合层与InAlGaN层键合的晶片。在图4c中,已经去除了生长衬底30,并提供了与n-InAlGaN层的欧姆接触22。然后,透过InAlGaN层刻蚀出台面32,以界定各个器件的有源区。在图4d中,主衬底已经被切割成独立的InAlGaN光发射器件。对于主衬底,硅是优选的,因为它很容易减薄和切成非常小的芯片,而且与其它常用衬底相比,具有较低的电阻率和较高的热导率。这种方法允许简单地切割InAlGaN器件,避免切割蓝宝石带来的问题。还有可能在粘结到主衬底之前刻蚀台面,而不是在去除生长衬底之后。

Claims (16)

1.一种InAlGaN光发射器件,包括:
主衬底(12);
AlInGaN光发射结构(20),包括接近主衬底顶面的、第一和第二极性的器件层;
与AlInGaN光发射结构的顶面的第一器件接触(18);
晶片键合层(16),置于主衬底和AlInGaN结构之间;和
第二器件接触(22),位于晶片键合层之内,与AlInGaN光发射结构的底面电连接。
2.权利要求1的器件,其中第二器件接触(22)包含至少50%的银。
3.权利要求1的器件,其中第二器件接触(22)包含至少50%的铝。
4.权利要求1的器件,其中主衬底(12)由包括金属和半导体的材料组中选择。
5.权利要求4的器件,其中主衬底(12)由包括银、锗、玻璃、铜和砷化镓的材料组中选择。
6.权利要求4的器件,其中主衬底(12)是半导体,它还包括位于主衬底的顶面上的第一衬底欧姆接触(24A)。
7.权利要求6的器件,还包括与主衬底的底面电连接的第二衬底欧姆接触(24B)。
8.权利要求1的器件,还包括一对位于构成边发射激光器的InAlGaN光发射结构的两个相对面上的抛光反射镜。
9.权利要求1的器件,还包括:
第一介质布拉格反射器反射镜(26A),位于InAlGaN光发射结构的顶面;和
第二介质布拉格反射器反射镜(26B),位于晶片键合层内部,靠近InAlGaN光发射结构的底面。
10.制备垂直导电AlInGaN光发射器件的方法,包括步骤:
在生长衬底上生长具有第一和第二极性的器件层的AlInGaN光发射结构;
在InAlGaN光发射结构的外露面上淀积第一欧姆金属层;
在主衬底上淀积第二欧姆金属层;和
晶片键合第一和第二欧姆金属层,以便在晶片键合界面内形成第一电接触。
11.权利要求10的方法,其中第一欧姆金属层是由包括银、镍、铝、金和钴的材料组中选取的。
12.权利要求10的方法,还包括步骤:
去除生长衬底;和
在InAlGaN光发射结构的新暴露出来的面上制备第二电接触。
13.权利要求12的方法,还包括透过AlInGaN光发射结构刻蚀出与所需器件尺寸相对应的台面的步骤。
14.权利要求13的方法,还包括分离主衬底的步骤。
15.权利要求10的方法,其中生长InAlGaN光发射结构的步骤包括在生长衬底上生长厚度大于50微米的AlInGaN薄膜的步骤。
16.权利要求10的方法,其中主衬底由包括金属和半导体的材料组中选择。
CN99126436.3A 1999-02-05 1999-12-16 通过去除衬底来制备铟铝镓氮光发射器 Pending CN1262528A (zh)

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US6800500B2 (en) 2004-10-05
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TW441137B (en) 2001-06-16
US7491565B2 (en) 2009-02-17
US20040077114A1 (en) 2004-04-22
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US20010042866A1 (en) 2001-11-22

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