CN1284251C - 使化合物半导体层激活成为p-型化合物半导体层的方法 - Google Patents
使化合物半导体层激活成为p-型化合物半导体层的方法 Download PDFInfo
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- CN1284251C CN1284251C CNB031567002A CN03156700A CN1284251C CN 1284251 C CN1284251 C CN 1284251C CN B031567002 A CNB031567002 A CN B031567002A CN 03156700 A CN03156700 A CN 03156700A CN 1284251 C CN1284251 C CN 1284251C
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- compound semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Abstract
Description
Claims (5)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR16501/98 | 1998-05-08 | ||
KR19980016501 | 1998-05-08 | ||
KR16501/1998 | 1998-05-08 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991076591A Division CN1145224C (zh) | 1998-05-08 | 1999-05-07 | 使化合物半导体层激活成为p-型化合物半导体层的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1495923A CN1495923A (zh) | 2004-05-12 |
CN1284251C true CN1284251C (zh) | 2006-11-08 |
Family
ID=19537147
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991076591A Expired - Fee Related CN1145224C (zh) | 1998-05-08 | 1999-05-07 | 使化合物半导体层激活成为p-型化合物半导体层的方法 |
CNB031567002A Expired - Fee Related CN1284251C (zh) | 1998-05-08 | 1999-05-07 | 使化合物半导体层激活成为p-型化合物半导体层的方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991076591A Expired - Fee Related CN1145224C (zh) | 1998-05-08 | 1999-05-07 | 使化合物半导体层激活成为p-型化合物半导体层的方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6242328B1 (zh) |
JP (2) | JP2000031084A (zh) |
KR (1) | KR100499117B1 (zh) |
CN (2) | CN1145224C (zh) |
TW (1) | TW501160B (zh) |
Families Citing this family (24)
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JP3256084B2 (ja) * | 1994-05-26 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 半導体集積回路およびその作製方法 |
JP3846150B2 (ja) * | 2000-03-27 | 2006-11-15 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子および電極形成方法 |
JP3285341B2 (ja) * | 2000-06-01 | 2002-05-27 | 士郎 酒井 | 窒化ガリウム系化合物半導体の製造方法 |
JP2002043619A (ja) * | 2000-07-27 | 2002-02-08 | Shiro Sakai | 窒化ガリウム系化合物半導体素子の製造方法 |
JP4581198B2 (ja) * | 2000-08-10 | 2010-11-17 | ソニー株式会社 | 窒化物化合物半導体層の熱処理方法及び半導体素子の製造方法 |
JP3466144B2 (ja) | 2000-09-22 | 2003-11-10 | 士郎 酒井 | 半導体の表面を荒くする方法 |
JP2002208541A (ja) * | 2001-01-11 | 2002-07-26 | Shiro Sakai | 窒化物系半導体装置及びその製造方法 |
JP3520919B2 (ja) | 2001-03-27 | 2004-04-19 | 士郎 酒井 | 窒化物系半導体装置の製造方法 |
US6479313B1 (en) | 2001-05-25 | 2002-11-12 | Kopin Corporation | Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes |
JP3548735B2 (ja) | 2001-06-29 | 2004-07-28 | 士郎 酒井 | 窒化ガリウム系化合物半導体の製造方法 |
EP1333478A1 (en) * | 2002-01-23 | 2003-08-06 | Shiro Sakai | Method for manufacturing gallium nitride compound semiconductor element and gallium nitride compound semiconductor element |
US6888875B2 (en) * | 2002-01-28 | 2005-05-03 | Fuji Photo Film Co., Ltd. | Light source apparatus equipped with a GaN type semiconductor laser, a method of eliminating stray light, and an image forming apparatus |
US7005685B2 (en) * | 2002-02-28 | 2006-02-28 | Shiro Sakai | Gallium-nitride-based compound semiconductor device |
JP2004134750A (ja) * | 2002-09-19 | 2004-04-30 | Toyoda Gosei Co Ltd | p型III族窒化物系化合物半導体の製造方法 |
KR101034055B1 (ko) | 2003-07-18 | 2011-05-12 | 엘지이노텍 주식회사 | 발광 다이오드 및 그 제조방법 |
GB2432455A (en) * | 2005-11-17 | 2007-05-23 | Sharp Kk | Growth of a semiconductor layer structure |
CN100382243C (zh) * | 2006-06-09 | 2008-04-16 | 河北工业大学 | 提高p型硅外延电阻率一致性的控制方法 |
JP2007173854A (ja) * | 2007-01-29 | 2007-07-05 | Sony Corp | 窒化物化合物半導体層の熱処理方法及び半導体素子の製造方法 |
KR101034059B1 (ko) * | 2010-01-15 | 2011-05-12 | 엘지이노텍 주식회사 | 발광 소자 활성화 장치 및 이를 이용한 발광 소자 활성화 방법 |
US8325127B2 (en) | 2010-06-25 | 2012-12-04 | Au Optronics Corporation | Shift register and architecture of same on a display panel |
JP6190582B2 (ja) * | 2012-10-26 | 2017-08-30 | 古河電気工業株式会社 | 窒化物半導体装置の製造方法 |
CN104638070B (zh) * | 2015-03-06 | 2017-08-18 | 天津三安光电有限公司 | 一种光电器件的制备方法 |
JP6728960B2 (ja) * | 2016-05-18 | 2020-07-22 | 富士電機株式会社 | 処理装置および半導体装置の製造方法 |
CN115295405B (zh) * | 2022-09-30 | 2023-03-21 | 北京大学 | 一种提高宽禁带半导体载流子浓度的方法 |
Family Cites Families (27)
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US4296424A (en) * | 1978-03-27 | 1981-10-20 | Asahi Kasei Kogyo Kabushiki Kaisha | Compound semiconductor device having a semiconductor-converted conductive region |
US5328855A (en) * | 1991-07-25 | 1994-07-12 | Matsushita Electric Industrial Co., Ltd. | Formation of semiconductor diamond |
TW232751B (en) * | 1992-10-09 | 1994-10-21 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for forming the same |
JP2790235B2 (ja) * | 1993-04-28 | 1998-08-27 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体のp型化方法 |
JP2814049B2 (ja) * | 1993-08-27 | 1998-10-22 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JPH0797300A (ja) * | 1993-09-27 | 1995-04-11 | Hitachi Cable Ltd | 窒化ガリウム系結晶の熱処理方法 |
US5583879A (en) * | 1994-04-20 | 1996-12-10 | Toyoda Gosei Co., Ltd. | Gallum nitride group compound semiconductor laser diode |
JP3256084B2 (ja) * | 1994-05-26 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 半導体集積回路およびその作製方法 |
US5825052A (en) * | 1994-08-26 | 1998-10-20 | Rohm Co., Ltd. | Semiconductor light emmitting device |
JP2666237B2 (ja) * | 1994-09-20 | 1997-10-22 | 豊田合成株式会社 | 3族窒化物半導体発光素子 |
US5804834A (en) * | 1994-10-28 | 1998-09-08 | Mitsubishi Chemical Corporation | Semiconductor device having contact resistance reducing layer |
JPH08222797A (ja) * | 1995-01-17 | 1996-08-30 | Hewlett Packard Co <Hp> | 半導体装置およびその製造方法 |
JP3250438B2 (ja) * | 1995-03-29 | 2002-01-28 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
JP3478012B2 (ja) * | 1995-09-29 | 2003-12-10 | ソニー株式会社 | 薄膜半導体装置の製造方法 |
JP3512933B2 (ja) * | 1996-01-25 | 2004-03-31 | 株式会社東芝 | 電界放出型冷陰極装置及びその製造方法 |
JPH09266218A (ja) * | 1996-03-28 | 1997-10-07 | Nippon Steel Corp | p型化合物半導体の低抵抗化方法 |
JP3393425B2 (ja) * | 1996-06-21 | 2003-04-07 | ソニー株式会社 | 窒化物系化合物半導体の熱処理方法 |
JP3587224B2 (ja) * | 1996-07-24 | 2004-11-10 | ソニー株式会社 | オーミック電極 |
JPH1065216A (ja) * | 1996-08-22 | 1998-03-06 | Toyoda Gosei Co Ltd | 3族窒化物半導体素子 |
JPH1070082A (ja) * | 1996-08-27 | 1998-03-10 | Sony Corp | p型窒化物系III−V族化合物半導体層の作製方法 |
JP4018177B2 (ja) * | 1996-09-06 | 2007-12-05 | 株式会社東芝 | 窒化ガリウム系化合物半導体発光素子 |
US6020602A (en) * | 1996-09-10 | 2000-02-01 | Kabushiki Kaisha Toshba | GaN based optoelectronic device and method for manufacturing the same |
JP3322179B2 (ja) * | 1997-08-25 | 2002-09-09 | 松下電器産業株式会社 | 窒化ガリウム系半導体発光素子 |
US5926726A (en) * | 1997-09-12 | 1999-07-20 | Sdl, Inc. | In-situ acceptor activation in group III-v nitride compound semiconductors |
JPH11126758A (ja) * | 1997-10-24 | 1999-05-11 | Pioneer Electron Corp | 半導体素子製造方法 |
JP3447940B2 (ja) * | 1997-12-24 | 2003-09-16 | 東芝電子エンジニアリング株式会社 | 半導体装置の製造方法 |
JPH11238692A (ja) * | 1998-02-23 | 1999-08-31 | Nichia Chem Ind Ltd | 窒化物半導体の低抵抗化方法 |
-
1999
- 1999-05-07 KR KR1019990016346A patent/KR100499117B1/ko not_active IP Right Cessation
- 1999-05-07 CN CNB991076591A patent/CN1145224C/zh not_active Expired - Fee Related
- 1999-05-07 TW TW088107414A patent/TW501160B/zh not_active IP Right Cessation
- 1999-05-07 CN CNB031567002A patent/CN1284251C/zh not_active Expired - Fee Related
- 1999-05-07 JP JP12737099A patent/JP2000031084A/ja active Pending
- 1999-05-10 US US09/307,771 patent/US6242328B1/en not_active Expired - Lifetime
-
2001
- 2001-04-17 US US09/835,340 patent/US6495433B2/en not_active Expired - Fee Related
-
2009
- 2009-04-06 JP JP2009091746A patent/JP2009152644A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR100499117B1 (ko) | 2005-07-04 |
TW501160B (en) | 2002-09-01 |
CN1145224C (zh) | 2004-04-07 |
JP2000031084A (ja) | 2000-01-28 |
US6242328B1 (en) | 2001-06-05 |
CN1241820A (zh) | 2000-01-19 |
US6495433B2 (en) | 2002-12-17 |
JP2009152644A (ja) | 2009-07-09 |
CN1495923A (zh) | 2004-05-12 |
US20010012679A1 (en) | 2001-08-09 |
KR19990088118A (ko) | 1999-12-27 |
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PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG LED CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD. Effective date: 20100513 |
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TR01 | Transfer of patent right |
Effective date of registration: 20100513 Address after: Gyeonggi Do, South Korea Patentee after: Samsung LED Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Electronics Co., Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SAMSUNG LED CO., LTD. Effective date: 20121211 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121211 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Electronics Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung LED Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061108 Termination date: 20150507 |
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EXPY | Termination of patent right or utility model |