CN1285171C - 振荡电路、升压电路、非易失性存储器件以及半导体装置 - Google Patents
振荡电路、升压电路、非易失性存储器件以及半导体装置 Download PDFInfo
- Publication number
- CN1285171C CN1285171C CNB028237641A CN02823764A CN1285171C CN 1285171 C CN1285171 C CN 1285171C CN B028237641 A CNB028237641 A CN B028237641A CN 02823764 A CN02823764 A CN 02823764A CN 1285171 C CN1285171 C CN 1285171C
- Authority
- CN
- China
- Prior art keywords
- circuit
- mentioned
- voltage
- resistance
- phase inverter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/03—Astable circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/03—Astable circuits
- H03K3/0315—Ring oscillators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP366839/2001 | 2001-11-30 | ||
JP2001366839A JP2003168959A (ja) | 2001-11-30 | 2001-11-30 | 発振回路、昇圧回路、不揮発性記憶装置、および半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1596507A CN1596507A (zh) | 2005-03-16 |
CN1285171C true CN1285171C (zh) | 2006-11-15 |
Family
ID=19176677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028237641A Expired - Lifetime CN1285171C (zh) | 2001-11-30 | 2002-11-29 | 振荡电路、升压电路、非易失性存储器件以及半导体装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7180794B2 (zh) |
EP (1) | EP1465341A4 (zh) |
JP (1) | JP2003168959A (zh) |
KR (1) | KR100596107B1 (zh) |
CN (1) | CN1285171C (zh) |
TW (1) | TWI300932B (zh) |
WO (1) | WO2003047100A1 (zh) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7719343B2 (en) | 2003-09-08 | 2010-05-18 | Peregrine Semiconductor Corporation | Low noise charge pump method and apparatus |
US7518424B2 (en) * | 2004-11-08 | 2009-04-14 | Elite Semiconductor Memory Technology Inc. | Slew rate controlled output circuit |
US7621463B2 (en) * | 2005-01-12 | 2009-11-24 | Flodesign, Inc. | Fluid nozzle system using self-propelling toroidal vortices for long-range jet impact |
US7737765B2 (en) * | 2005-03-14 | 2010-06-15 | Silicon Storage Technology, Inc. | Fast start charge pump for voltage regulators |
US7362084B2 (en) | 2005-03-14 | 2008-04-22 | Silicon Storage Technology, Inc. | Fast voltage regulators for charge pumps |
JP4947703B2 (ja) * | 2006-11-14 | 2012-06-06 | オンセミコンダクター・トレーディング・リミテッド | チャージポンプ回路 |
EP2330735A3 (en) * | 2008-07-18 | 2012-04-04 | Peregrine Semiconductor Corporation | Operational transconductance amplifier |
US9660590B2 (en) | 2008-07-18 | 2017-05-23 | Peregrine Semiconductor Corporation | Low-noise high efficiency bias generation circuits and method |
US8816659B2 (en) | 2010-08-06 | 2014-08-26 | Peregrine Semiconductor Corporation | Low-noise high efficiency bias generation circuits and method |
KR101066762B1 (ko) | 2008-09-04 | 2011-09-21 | 주식회사 하이닉스반도체 | 전압 생성 회로 및 이를 구비한 불휘발성 메모리 소자 |
JP5554910B2 (ja) * | 2008-09-08 | 2014-07-23 | ローム株式会社 | チャージポンプ回路の制御回路およびそれらを利用した電源回路 |
US8106702B2 (en) * | 2009-10-21 | 2012-01-31 | Nanya Technology Corp. | Dynamic enabling pump for power control |
US8339185B2 (en) | 2010-12-20 | 2012-12-25 | Sandisk 3D Llc | Charge pump system that dynamically selects number of active stages |
US9413362B2 (en) | 2011-01-18 | 2016-08-09 | Peregrine Semiconductor Corporation | Differential charge pump |
US8686787B2 (en) | 2011-05-11 | 2014-04-01 | Peregrine Semiconductor Corporation | High voltage ring pump with inverter stages and voltage boosting stages |
US9425772B2 (en) | 2011-07-27 | 2016-08-23 | Nvidia Corporation | Coupling resistance and capacitance analysis systems and methods |
US9496853B2 (en) | 2011-07-22 | 2016-11-15 | Nvidia Corporation | Via resistance analysis systems and methods |
US8952705B2 (en) | 2011-11-01 | 2015-02-10 | Nvidia Corporation | System and method for examining asymetric operations |
US9448125B2 (en) | 2011-11-01 | 2016-09-20 | Nvidia Corporation | Determining on-chip voltage and temperature |
US8872552B2 (en) | 2012-09-29 | 2014-10-28 | Infineon Technologies Austria Ag | High-side semiconductor-switch low-power driving circuit and method |
CN103983809A (zh) | 2013-02-08 | 2014-08-13 | 辉达公司 | Pcb板及其在线测试结构以及该在线测试结构的制造方法 |
US9077238B2 (en) | 2013-06-25 | 2015-07-07 | SanDisk Technologies, Inc. | Capacitive regulation of charge pumps without refresh operation interruption |
US9083231B2 (en) | 2013-09-30 | 2015-07-14 | Sandisk Technologies Inc. | Amplitude modulation for pass gate to improve charge pump efficiency |
US9154027B2 (en) * | 2013-12-09 | 2015-10-06 | Sandisk Technologies Inc. | Dynamic load matching charge pump for reduced current consumption |
US9455728B2 (en) | 2014-04-04 | 2016-09-27 | International Business Machines Corporation | Digital phase locked loop for low jitter applications |
US9563222B2 (en) * | 2014-05-08 | 2017-02-07 | Varian Medical Systems, Inc. | Differential reference signal distribution method and system |
WO2016012893A1 (en) * | 2014-07-25 | 2016-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Oscillator circuit and semiconductor device including the same |
FR3028709B1 (fr) * | 2014-11-14 | 2016-11-25 | Yves Marie Debuire | Oscillenteur chromatique |
US9917507B2 (en) | 2015-05-28 | 2018-03-13 | Sandisk Technologies Llc | Dynamic clock period modulation scheme for variable charge pump load currents |
CN104992939B (zh) * | 2015-07-01 | 2018-02-23 | 东南大学 | 氮化镓基低漏电流悬臂梁的环形振荡器及制备方法 |
US9647536B2 (en) | 2015-07-28 | 2017-05-09 | Sandisk Technologies Llc | High voltage generation using low voltage devices |
US9520776B1 (en) | 2015-09-18 | 2016-12-13 | Sandisk Technologies Llc | Selective body bias for charge pump transfer switches |
CN108933594B (zh) * | 2017-05-22 | 2022-01-11 | 中芯国际集成电路制造(上海)有限公司 | 压控振荡器及锁相环 |
JP2022154908A (ja) * | 2021-03-30 | 2022-10-13 | ラピステクノロジー株式会社 | リングオシレータ、およびリングオシレータの起動方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55115717A (en) * | 1979-03-01 | 1980-09-05 | Citizen Watch Co Ltd | Ring oscillator |
JPS5797218A (en) * | 1980-12-08 | 1982-06-16 | Citizen Watch Co Ltd | Cmos ring oscillator |
US4831592A (en) * | 1986-07-09 | 1989-05-16 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US5315547A (en) * | 1988-07-11 | 1994-05-24 | Hitachi, Ltd. | Nonvolatile semiconductor memory device with selective tow erasure |
JP3170038B2 (ja) * | 1992-05-19 | 2001-05-28 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2787639B2 (ja) * | 1992-08-07 | 1998-08-20 | 三菱電機株式会社 | パルス信号発生回路および半導体記憶装置 |
JPH07240670A (ja) | 1994-02-28 | 1995-09-12 | Toshiba Corp | リング発振回路 |
JP3176016B2 (ja) * | 1995-01-05 | 2001-06-11 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2755181B2 (ja) * | 1994-08-12 | 1998-05-20 | 日本電気株式会社 | 電圧制御発振器 |
FR2758022B1 (fr) * | 1996-12-30 | 1999-02-19 | Sgs Thomson Microelectronics | Oscillateur et circuit de commande de commutation pour generateur de haute tension mettant en oeuvre cet oscillateur |
JP3298448B2 (ja) * | 1997-02-21 | 2002-07-02 | 日本電気株式会社 | 電圧制御発振器 |
JPH11328973A (ja) * | 1998-05-20 | 1999-11-30 | Nec Ic Microcomput Syst Ltd | 半導体記憶装置 |
-
2001
- 2001-11-30 JP JP2001366839A patent/JP2003168959A/ja active Pending
-
2002
- 2002-11-29 CN CNB028237641A patent/CN1285171C/zh not_active Expired - Lifetime
- 2002-11-29 US US10/496,807 patent/US7180794B2/en not_active Expired - Lifetime
- 2002-11-29 TW TW091134774A patent/TWI300932B/zh not_active IP Right Cessation
- 2002-11-29 KR KR1020047008296A patent/KR100596107B1/ko active IP Right Grant
- 2002-11-29 WO PCT/JP2002/012574 patent/WO2003047100A1/ja active Application Filing
- 2002-11-29 EP EP02781864A patent/EP1465341A4/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US20050063231A1 (en) | 2005-03-24 |
JP2003168959A (ja) | 2003-06-13 |
CN1596507A (zh) | 2005-03-16 |
EP1465341A4 (en) | 2005-11-23 |
KR20040068929A (ko) | 2004-08-02 |
US7180794B2 (en) | 2007-02-20 |
TW200303024A (en) | 2003-08-16 |
EP1465341A1 (en) | 2004-10-06 |
WO2003047100A1 (fr) | 2003-06-05 |
TWI300932B (en) | 2008-09-11 |
KR100596107B1 (ko) | 2006-07-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INTELLIGENCE + HI-TECH COMPANY Free format text: FORMER OWNER: SHARP CORPORATION Effective date: 20130308 Owner name: TAILAMAN NINTH FOUNDATION LLC Free format text: FORMER OWNER: INTELLIGENCE + HI-TECH COMPANY Effective date: 20130308 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130308 Address after: Budapest Patentee after: Smart hi tech Co. Address before: Osaka, Japan Patentee before: Sharp Corp. Effective date of registration: 20130308 Address after: Delaware Patentee after: Talaman ninth foundation LLC Address before: Budapest Patentee before: Smart hi tech Co. |
|
CX01 | Expiry of patent term |
Granted publication date: 20061115 |
|
CX01 | Expiry of patent term |