CN1320101A - 将气密盖密封到半导体管芯的方法和装置 - Google Patents

将气密盖密封到半导体管芯的方法和装置 Download PDF

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CN1320101A
CN1320101A CN99811548A CN99811548A CN1320101A CN 1320101 A CN1320101 A CN 1320101A CN 99811548 A CN99811548 A CN 99811548A CN 99811548 A CN99811548 A CN 99811548A CN 1320101 A CN1320101 A CN 1320101A
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J·G·舒克
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Abstract

一种气密地钝化半导体器件的方法和装置包括将盖直接密封到半导体衬底上。有源器件形成在衬底的表面上,并由基本上平坦的盖密封区环绕,进而由键合焊盘环绕。第一层可焊接材料形成在盖密封区上。提供盖,盖具有结构上对应于第一层的第二层可焊接材料。焊料层提供在可焊接材料的第一层和第二层之间。在优选实施例中,焊料形成在第二层上。加热以将盖气密地结合到半导体器件上同时不需要常规的封装。优选第一和第二层为使用常规半导体技术处理的常规已知可焊接材料的多层结构。通过调节一层或两层可焊接材料的相对宽度可以控制盖和半导体器件之间的角度。

Description

将气密盖密封到半导体管芯的方法和装置
本发明涉及钝化半导体管芯，特别是气密地钝化半导体管芯的领域。具体地，本发明涉及将透光盖安装并密封到光激活的半导体集成电路。
在集成电路(芯片)的制造中，众所周知需要密封芯片以防止机械损伤和污染。这些称为钝化芯片。现有多种密封芯片的公知技术。这些技术包括将芯片安装到封装的腔体内，将芯片引线键合到引线框架，然后用盖密封封装。另一公知技术包括将芯片安装到引线框架，将芯片引线键合到引线框架，然后将芯片和引线框架钝化在模制塑料或塑料环氧体中。钝化芯片的第三个常见技术包括将芯片倒装到印制电路板然后用塑料树脂覆盖芯片。
EPROM为只读存储器件。仅能通过使或允许光学辐射(紫外线和可见光)照射到EPROM的表面删除存储在EPROM中的程序或数据。因此，常规的芯片封装技术不合适是由于它们不能透过光辐射。要解决该问题，EPROM的制造商将EPROM芯片安装在陶瓷封装的腔体内并用透光盖气密地密封组件。
微电机械器件(MEM)为公知的另一种硅半导体器件。MEM对多种应用都非常有用，包括应变仪、加速仪、电子水准仪，并且也用于显示器或其它光学装置。由于它们极小的活动元件，MEM特别易受环境条件影响。因此，MEM通常密封在气密封装的腔体内，然后气密地密封以控制MEM的环境。
当MEM用在显示应用中时，要求光能(光)能够透过封装，照射到MEM的表面进行调制，然后透过封装形成显示图像。对于其它光学器件也要求光进入并离开封装的能力。虽然常规的陶瓷封装气密密封，然而由于它们不透明，因此它们不适合与显示器或光学MEM一起使用。在一些显示器或光学MEM的应用中，MEM安装在陶瓷封装的腔体内。通过将透明盖附加到陶瓷封装上用与EPROM封装相同气密密封的方式气密密封组件。
众所周知制造硅半导体器件的大多数成本都与封装技术有关。这特别适用于全密封陶瓷封装。包括光学透明窗口的封装成本仍然相当昂贵。
在有些情况下当制造显示器或其它光学MEM组件时，重要的是MEM和透明盖相互之间有精确的物理关系。对于一些应用，重要的是MEM和透明盖要精确地相互平行。对于其它一些应用，重要的是MEM和透明盖作为结构之间精确的角度。常规的硅半导体芯片封装技术不会考虑控制芯片和封装盖之间角度的能力。
需要一种气密地密封计划用在显示器应用中的MEM的方法和装置。需要一种气密地密封计划用在光学应用中的MEM的方法和装置。还需要一种密封具有高引脚数的MEM的方法和装置。此外需要一种较便宜地保护MEM的方法和装置。需要一种气密地密封可以通过不复杂的制造工艺安装到MEM的显示MEM的方法和装置。进一步需要一种密封显示MEM的方法和装置，其中可以通过组装工艺精确地控制盖相对于MEM的角度。
气密地钝化半导体器件的方法和装置包括将盖直接密封到半导体衬底上。有源器件形成在衬底的表面上，并由基本上平坦的盖密封区环绕，进而由键合焊盘环绕。第一层可焊接材料形成在盖密封区上。所提供的盖具有结构上与第一层的相对应第二层可焊接材料。焊料层提供在可焊接材料的第一层和第二层之间。在优选实施例中，焊料形成在第二层上。加热以将盖气密地结合到半导体器件上同时不需要常规的封装。优选第一和第二层为使用常规半导体技术处理的常规已知可焊接材料的多层结构。通过调节一层或两层可焊接材料的相对宽度可以控制盖和半导体器件之间的角度。
此外，可以使用其它的技术将盖密封到衬底。在第一备选方案中，使用环氧树脂。可选择的第一间隔材料形成在盖密封区中。以对应于盖密封区的结构形成环氧树脂。盖和半导体器件对准并加热以气密地将它们结合在一起。
在第二备选方案中，使用玻璃熔块(frit)。可选择的第二间隔材料形成在盖密封区中。以对应于盖密封区的结构形成玻璃熔块。盖和半导体器件对准并加热以气密地将它们结合在一起。
图1示出了优选实施例的简化截面图。
图2示出了根据本发明的半导体器件的示例性的平面方框图。
图3示出了密封盖之前盖和半导体器件的简化示意性截面图。
图4示出了根据本发明盖密封到半导体器件的简化示意性截面图，比图3略微详细。
图5示出了根据本发明盖的简化示意性截面图，比图3略微详细。
图6示出了根据本发明盖的备选实施例的简化示意性截面图，比图3略微详细。
图7示出了根据本发明半导体器件盖的简化示意性截面图，比图3略微详细。
图8示出了根据本发明半导体器件的备选实施例的简化示意性截面图，比图3略微详细。
图9示出了盖密封到半导体器件之前产生预定倾斜角的一个实施例的示意性截面图。
图10示出了盖密封到半导体器件之后图9的实施例在原位倾斜的放大示意性截面图。
图11示出了将盖与半导体器件对准的定位器的平面图。
图12示出了图11定位器的侧视图。
图13示出了根据本发明密封盖到半导体器件的工艺中温度与时间关系的曲线图。
图14示出了根据本发明密封盖到半导体器件的工艺中压力与时间关系的曲线图。
图15示出了同时分离盖和半导体器件的晶片锯的示意性截面图。
研制本发明以气密地密封用于显示器件的MEM的机械操作部分。具体地，MEM为衍射光栅光阀(GLV)。GLV的例子可以在U.S.专利No.5,311,360中找到，也可以在U.S.专利申请No.08/482,188中找到。该技术的研制者发现如果环境湿气沉积在带形结构上，发生表面放电，妨碍了GLV的适当操作。要避免这种问题，优选在气密封装中钝化MEM结构的机械操作部分。此外，重要的是玻璃型或具有合适光学特性的其它透明材料的密封。
与用于硅半导体器件的其它气密钝化技术的现有技术相比，本发明的气密盖直接密封到硅半导体器件的表面上。对于本领域中的普通技术人员来说很显然本发明的钝化技术也可用于气密密封包括非硅或非半导体器件的其它类型器件或用于不透明盖结构。
图1示出了透明盖气密地密封到硅半导体器件的代表性截面图。优选实施例的硅半导体器件为用于形成显示器的GLV。图1的剖面图没有按比例画，也没有包括在工作的GLV中可找到的所有必须的元件。所述省略不是为了限定，在本文件中这样做是为了避免不必要和无关的细节混淆本发明。
包括金属性导电和反射覆盖物102的导电带100形成在半导体衬底104上，气隙106位于带100和衬底104之间。电极108形成在衬底104的表面上，并由绝缘层110覆盖。电极108位于在带100下，并且也位于气隙106下。反射覆盖物102在机械操作的带100的区域上延伸，并构形成常规的键合焊盘112和它的末端。器件也用常规的覆盖绝缘钝化层114钝化。钝化层114不覆盖键合焊盘112，也不覆盖带形结构100/102。使用常规的焊线键合结构116将控制和电源信号耦合到半导体器件。
根据常规的半导体制造技术，器件尽可能地密集地组装到半导体衬底的表面上。然而，这里由于光学玻璃直接气密地密封到半导体器件上，键合焊盘112要远离带形结构100/102相当一段距离以提供盖密封区118。使用常规的半导体处理技术将可焊接材料120形成在盖密封区118上。
由于本发明的优选应用是气密密封用于显示器应用的GLV，因此盖122优选由光学特性材料形成。本领域中的普通技术人员应该理解盖122可以由光敏材料覆盖，用于多种目的，包括但不限于，过滤掉不希望的辐射、增加反射率、或降低反射率。此外，也可以使盖122具有光学特性。换句话说，盖122可以为任何合适类型的透镜。
一旦形成适合安装到盖密封区118上的尺寸的盖，使用常规的半导体处理技术，形成环形可焊接材料124，环绕盖122一个表面的外周边。接下来，焊料126淀积在可焊接材料124上，由此盖结合到半导体器件上。虽然没有按比例显示，但从图1的图中可以清楚地看出，盖122和带形结构100/102可远离安装(mounted away)，以避免相互干扰。以此方式，所述结构100/102可自由地上下移动。
图2示出了根据本发明的示例性器件的平面图，其中各区域显示为方框。对于本领域中的普通技术人员来说，可以显著地更改各结构之间的精确尺寸和比例，但仍落入这些教导的精神和范围内。根据本发明的盖的优选实施例，盖为光学元件，计划安装在用做显示器(display engine)的GLV上。GLV的带形结构包括机械操作区140。在机械操作区140周围设置有盖密封区118。如果合适，在几个图中相同的参考数字用于表示相同的元件。如前所述，钝化盖密封区118，不包括如通常能在MEM器件中找到的机械操作元件。类似地，盖密封区118也不包括键合焊盘或其它芯片外接口结构，是由于盖会干扰象这样的有效操作。盖密封区118可以包括有源电子元件。然而，当盖密封区118包括有源电子元件时，必须尝试平面化该区域以提供盖合适匹配的表面。
键合区142环绕盖密封区118。键合区142包括使半导体器件与芯片外电路和系统电连接所需要的一些键合焊盘。在本发明如GLV的显示元件中，需要一千多个键合焊盘。其它类型的半导体器件根据它们预计的应用需要或多或少的键合焊盘。
图3示出了本发明第一实施例的代表性示意截面图。如前所述，可焊接材料150形成在半导体器件154的盖密封区152上。可焊接材料156也形成在透明盖158的外周边周围。焊料层160形成在可焊接材料层156上。对于本领域中的普通技术人员显然焊料也可以施加到第一层可焊接材料上。然而，本发明人优选将焊料附加到盖上以避免焊料污染晶片。
透明盖158接触并对准半导体器件154。加热组件以使焊料160流动。变成液体之后焊料160’的表面张力使它保留在半导体器件154上的可焊接材料150和透明盖158上的可焊接材料156之间。焊料160’在参考数字上标有上标(’)，以表示由于流动和重新固化结构已改变。加热组件足够的时间以使焊料160流动并润湿所有可焊接表面。一旦除去热源焊料160’重新固化，并且透明盖158气密地密封到半导体器件154，如图4的截面图所示。
图5示出了盖和金属层的截面图。根据优选实施例，可焊接材料156实际包括多层结构。在优选实施例中，可焊接层156包括靠着透明盖158形成的第一层156A。第二层156B形成在第一层156A上，然后焊料层160形成在第二层156B上。在使用这些层的优选实施例中，第一层156A使用300埃的铬层，第二层156B为10,000埃的金层。焊料层160为50微米厚的80Au/20Sn焊料。
根据优选实施例，在其上形成金属层之前，将透明盖158分段(segmented)。本发明通过实验发现掩蔽透明盖158侧边的成本超过了材料的成本。由此，在实践中，金和铬也形成在透明盖158的侧边。虽然这不是首选的，但也不会产生有害影响。随着制造工艺的发展，也可以去除透明盖158侧边上的金铬。
图6示出了盖和金属层的另一实施例的截面图。在该实施例中，可焊接材料156也包括多层结构。这里，可焊接材料包括靠着透明盖158形成的第一层156C。第二层156D形成在第一层156C上，第三层156E形成在第二层156D上。然后焊料层160形成在第三层156E上。在该实施例中，第一层156C是300埃的铬层，第二层156D为500埃的镍层，第三层156E为10,000埃的金层。焊料层160为50微米厚的80Au/20Sn焊料。
图7示出了半导体器件154的可焊接区152的一个实施例的截面图。为简化起见，没有显示半导体器件154的有源部分。可焊接材料层实际由多层结构形成。使用常规的剥离半导体处理技术形成多层结构。换句话说，光致抗蚀剂层淀积在半导体晶片的表面上。使用常规的掩蔽技术，穿过光致抗蚀剂形成开口。然后可焊接材料层淀积在晶片上，并进入穿过光致抗蚀剂形成的开口内。除去光致抗蚀剂之后，可焊接材料层仅保留在盖密封区152中的半导体晶片的表面上。
第一层150A形成在半导体器件154的盖密封区152中。第二层150B形成在第一层150A上。在本实施例中，第一层150A为500埃的铬层，第二层150B为10,000埃的钯层。
图8示出了可焊接区152的另一实施例的截面图。在本实施例中，可焊接层150包括三层结构。第一层150C形成在半导体器件154的盖密封区152中。第二层150D形成在第一层150C上，使用常规的剥离技术，第三层150E形成在第二层150D上。在该实施例中，第一层150C使用300埃的钛层，第二层150D为1000埃的镍层，第三层150E为1000埃的铂层。
显然，透明盖158和半导体器件154之间的角度会影响组件的光学特性。例如，半导体器件154的表面和透明盖158的下面之间的光能反射会产生有益或破坏性的干扰。有一些应用需要透明盖158与半导体器件154平行，有一些应用需要这些元件之间有预定的角度。本发明也为用户提供了控制和选择透明盖158与半导体器件154之间预定角度的技术和能力。
一旦融化，焊料160将在所有的润湿表面上流动。然而，焊料160的表面张力会阻止它流到可焊接层150和156的边界外。由于焊料的粘性，焊料不会在环形结构的周边环形地流动，例如本发明介绍的。
由于使用常规的半导体处理技术同时形成所有的层，因此几层的每一层的厚度在整个层中都是均匀的。要控制透明盖158和半导体器件154之间的相对角度，可调节可焊接层150一侧的相对宽度。图9示出了本实施例的简化截面图。如前所述半导体器件154的盖覆盖区152基本上为矩形环。沿矩形环的一个边改变形成可焊接层150的掩模，形成较宽层150’。
图10示出了一旦盖158与半导体器件154对准并且加热组件气密地密封结构的图9实施例的截面图。将焊料168加热到熔点以上后，它流到所有的润湿表面。由于层150’比层150宽，焊料160”必须扩展得比焊料宽160”’。此外，由于焊料不会在环形结构的周边环形地流动，因此宽焊料层150’上的透明盖158比常规的可焊接层150上的透明盖158更靠近半导体器件154。
对于本领域中的普通技术人员来说通过改变连接到透明盖158的可焊接层156的宽度，也可以调节所得焊料的厚度以及透明盖158和半导体器件154之间的角度。通过同时改变可焊接层150和它对应的可焊接层156的宽度，也可以调节角度。然而，由于半导体器件154的晶片用一系列的晶片掩模制成，并由于盖分别与晶片对准，因此仅通过适当地调节可焊接层150的宽度，就可以容易地调节角度。
图11示出了将透明盖与晶片上的半导体器件对准的定位器200的平面图。图12示出了同一定位器200的截面的部分侧视图。在图11和12中共同的参考数字用于表示相同的元件。定位器200包括石墨基座202。基座202包括适当尺寸的切口204(cut-out)以接收半导体晶片。四个螺纹锁紧元件206(螺钉)向上穿过基座202并穿过多个孔208。
中间板210包括对准以接收螺纹锁紧元件206的孔214。中间板210还包括37个开口212，大小可接收透明盖158(图3)。中间板210还包括三个槽216，设置以便随后的加热操作期间使湿气从半导体器件154(图3)排出。对准针218安装到基座202并穿过中间板210。一对压板220也包括孔222，设置以接收螺纹锁紧元件206。
在使用中，晶片对准并安装在基座202的断路器204内，半导体器件154(图3)背向基座202。然后中间板210安装到晶片上的基座202。然后透明盖158插到每个开口212内。显然可以对仍然为晶片形式的半导体器件154进行测试操作，标出坏器件以便透明盖158不需要密封这些坏器件。加负荷的盖板224搁在透明盖158上，由于重力向下施加适量的压力。
一旦针对图11和12介绍的组件完全构成，它将被放入环境室内。图13示出了以℃为单位的温度与时间的曲线图。图14示出了以tort和/或atm为单位的气压与时间的曲线图。一旦从环境大气移走，组件暴露到回充(back fill)气体，包括10％的He、10％的H和80％的N，至少1ppm的水。结合一个时间线显示了图13和14两个曲线图，这里介绍本发明的形成气密密封的工艺。
组件放入初始条件为环境温度和气氛的环境室内。马上，气氛抽空到0.1torr的真空压力。该周期持续约1分钟。然后组件受到2atm压力的回充气体约15到30秒，然后气氛抽空到0.0001torr的真空压力。所述第一次抽空持续约5分钟，在抽空期间，室加热到190℃。这小于焊料的熔点。所述加热步骤烘干了半导体器件154(图3)以及盖158(图3)上的残留湿气，称为干燥真空烘焙。在约7.5分钟的干燥真空烘焙期间，将气氛再次抽空到0.0001torr约1分钟。因此，在约9.5分钟，用回充气体将压力增加到2atm。一旦约10分钟压力达到2atm，加热室超过焊料的熔点，并保持该温度约3分钟。然后温度返回到室温。返回经过熔点之后，由此焊料固化并气密半导体器件，气压返回到环境压力。通过辐射热源进行加热步骤，当然也可以使用其它任何方便的加热方式。
如前所述必须首先形成可焊接材料层以便焊料适当地粘接到盖和半导体器件。这样做有一些有利之处。对于MEM，重要的是盖不影响机械MEM结构的自由移动。可焊接材料层可用于增加盖和半导体器件之间的距离。然而，除焊料之外的其它材料也可以用于密封半导体器件。结构的材料也可以如下所述适当地替换。
可以在盖密封区中或盖周边的周围，或两者中形成聚合环氧树脂环。之后盖和半导体器件接触在一起，加热和冷却以钝化半导体器件。根据环氧层的厚度和它的相对粘度，盖和半导体器件充分远离，以避免盖干扰MEM的操作。除非其它简单的实验指出，任何合适的材料可以首先淀积在盖密封区中、盖周边的周围，或两者中以增加盖和半导体器件之间的间距。隔离材料可以是在常规的半导体制造设备中容易制造的材料，例如SiO2。
可以代替聚合环氧树脂的其它材料是玻璃熔块。对于所述置换，可以与以上介绍的聚合环氧相同的方式使用玻璃材料。
对于本领域中的普通技术人员来说显然盖和它们的可焊接层的各环以及焊料的覆盖层可以形成在晶片的透明材料上。然后，在结合图13和14中指示的温度周期变化之前，透明晶片和半导体晶片仅需要固定和对准。要将器件分成分立的器件，仅需要使用窄晶片锯条并切入透明晶片仅预定深度以形成分离的盖，然后在第二操作中，使用相同的窄条锯分开各半导体器件。在另一实施例中，可以使用一个带小搁板(berm)的窄条锯在一次操作中分开这些器件。如图1 5所示，盖158被搁板300分开，半导体器件154同时被锯条302的顶端分开。
当盖158都同时形成在晶片中然后与半导体器件154的晶片结合在一起时，对于本领域中的普通技术人员来说显然半导体器件154和盖158需要相互平行。要在半导体器件154和盖158之间形成预定的角度，那么如前所述半导体器件154和/或盖158要具有不均匀的周边区域。一旦使用以上介绍的一种技术将半导体器件154和盖158最初结合在一起，切割组件形成分立的单元。因此，这些单元可重新加热以使密封回流并在半导体器件154和盖158之间提供需要的角度。
依照具体的实施例结合细节介绍了本发明，以便于理解本发明的构成和操作的基本原理。这里提到的具体实施例及其细节不是为了限定附带的权利要求书的范围。对于本领域中的普通技术人员来说显然可以对为了说明选择的实施例进行修改同时不脱离本发明的精神和范围。

Claims (50)

1．一种具有气密密封的微电子机械(MEM)，包括：
a．其上形成有有源MEM器件的衬底；
b．环绕有源MEM器件的盖密封区；
c．形成在盖密封区上的第一层可焊接材料；
d．形成在第一层可焊接材料上的焊料层；
e．形成在焊料层上的第二层可焊接材料；
f．形成第二层可焊接材料上的盖，由此形成气密密封。
2．根据权利要求1的MEM，其中第一层可焊接材料为包括与盖密封区邻接的铬和与焊料邻接的钯的多层结构。
3．根据权利要求1的MEM，其中第一层可焊接材料为包括与盖密封区邻接的钛、与钛邻接的镍以及镍和焊料之间的铂的多层结构。
4．根据权利要求1的MEM，其中第二层可焊接材料为包括与焊料邻接的金和与盖邻接的铬的多层结构。
5．根据权利要求1的MEM，其中第二层可焊接材料为包括与焊料邻接的金、与金邻接的镍以及镍和盖之间的铬。
6．一种显示器件，包括：
a．形成在半导体衬底上的调光器；
b．环绕调光器的盖密封区；
c．与盖密封区相邻并远离调光器设置的多个键合焊盘；
d．形成在盖密封区上的第一层可焊接材料；
e．形成在第一层可焊接材料上的焊料层；
f．形成在焊料层上的第二层可焊接材料；
g．形成第二层可焊接材料上的透明盖，由此形成气密密封。
7．根据权利要求6的显示器件，其中调光器为衍射栅光阀。
8．根据权利要求6的显示器件，其中第一层可焊接材料为包括与盖密封区邻接的铬和与焊料邻接的钯的多层结构。
9．根据权利要求6的显示器件，其中第一层可焊接材料为包括与盖密封区邻接的钛、与钛邻接的镍以及镍和焊料之间的铂的多层结构。
10．根据权利要求6的显示器件，其中第二层可焊接材料为包括与焊料邻接的金和与盖邻接的铬的多层结构。
11．根据权利要求6的显示器件，其中第二层可焊接材料为包括与焊料邻接的金、与金邻接的镍以及镍和盖之间的铬。
12．一种使半导体器件形成气密密封的方法，包括以下步骤：
a．在半导体衬底上形成有源半导体器件；
b．环绕有源半导体器件形成基本上平面化的盖密封区；
c．在衬底的表面上和盖密封区外形成电连接到有源半导体器件的装置；
d．在盖密封区上形成第一层可焊接材料；
e．在透光盖上形成第二层可焊接材料，图形与第一层可焊接材料一致；
f．使第一层可焊接材料与第二层可焊接材料对准，同时在两者之间提供焊料层；以及
g．施加热熔化焊料并将盖密封到盖密封区。
13．一种在盖和半导体器件之间形成气密密封的方法，其中盖和半导体器件相互平行，包括以下步骤：
a．在半导体衬底上形成有源半导体器件；
b．环绕有源半导体器件形成基本上平面化的盖密封区；
c．在衬底的表面上和盖密封区外形成电连接到有源半导体器件的装置；
d．在盖密封区上形成第一层可焊接材料；
e．在透光盖上形成第二层可焊接材料，图形与第一层可焊接材料一致；
f．使第一层可焊接材料与第二层可焊接材料对准，同时在两者之间提供焊料层；以及
g．施加热熔化焊料并将盖密封到盖密封区，
其中第一层可焊接材料和第二层可焊接材料每个在它们各长度周围具有基本上均匀的截面。
14．一种在盖和半导体器件之间形成气密密封的方法，其中盖和半导体器件相互不平行，包括以下步骤：
a．在半导体衬底上形成有源半导体器件；
b．环绕有源半导体器件形成基本上平面化的盖密封区；
c．在衬底的表面上和盖密封区外形成电连接到有源半导体器件的装置；
d．在盖密封区上形成第一层可焊接材料；
e．在透光盖上形成第二层可焊接材料，图形与第一层可焊接材料一致；
f．使第一层可焊接材料与第二层可焊接材料对准，同时在两者之间提供焊料层；以及
g．施加热熔化焊料并将盖密封到盖密封区，
其中第一层可焊接材料和第二层可焊接材料中的至少一个在它们各长度周围具有基本上不均匀的截面。
15．根据权利要求14的方法，其中盖密封区和第一层可焊接材料具有基本上矩形的构形，具有基本上以直角接合的四个支柱，第一层可焊接材料的一个支柱具有与其它三个支柱基本上不同的截面面积。
16．一种使多个半导体器件的每一个同时形成气密密封的方法，所述多个半导体器件都形成在单个半导体晶片上，包括以下步骤：
a．在半导体衬底上形成多个有源半导体器件；
b．环绕每个有源半导体器件形成基本上平面化的盖密封区；
c．在衬底的表面上和每个有源半导体器件的盖密封区外形成电连接到每个有源半导体器件的装置；
d．在每个盖密封区上形成第一层可焊接材料；
e．在透光晶片上形成第二层可焊接材料，图形与第一层可焊接材料一致；
f．使第一层可焊接材料与第二层可焊接材料对准，同时在两者之间提供焊料层；以及
g．施加热熔化焊料并将晶片密封到盖密封区。
17．一种在透明晶片和具有多个半导体器件的半导体晶片之间形成气密密封的方法，其中透明晶片和半导体晶片相互平行，包括以下步骤：
a．在半导体衬底上形成具有多个有源半导体器件的晶片；
b．环绕每个有源半导体器件形成基本上平面化的盖密封区；
c．在衬底的表面上和每个盖密封区外形成电连接到每个有源半导体器件的装置；
d．在每个盖密封区上形成第一层可焊接材料；
e．在透光晶片上形成第二层可焊接材料，图形与第一层可焊接材料一致；
f．使第一层可焊接材料与第二层可焊接材料对准，同时在两者之间提供焊料层；以及
g．施加热熔化焊料并将透光晶片密封到盖密封区，
其中第一层可焊接材料和第二层可焊接材料每个在它们各长度周围具有基本上均匀的截面。
18．在多个透明晶片的盖和半导体器件的晶片之间形成气密密封的方法，其中至少一个盖和对应的半导体晶片相互不平行，包括以下步骤：
a．在半导体衬底上形成多个有源半导体器件；
b．环绕每个有源半导体器件形成基本上平面化的盖密封区；
c．在衬底的表面上和每个盖密封区外形成电连接到每个有源半导体器件的装置；
d．在盖密封区上同时形成第一层可焊接材料；
e．在透光晶片上形成第二层可焊接材料，图形与第一层可焊接材料一致；
f．使第一层可焊接材料与第二层可焊接材料对准，同时在两者之间提供焊料层；以及
g．施加热熔化焊料并将晶片密封到盖密封区，
其中第一层可焊接材料和第二层可焊接材料中的至少一个在它们各长度周围具有基本上不均匀的截面；
h．同时将半导体器件与盖分开形成单元；以及
I．重新加热单元在盖和各半导体器件之间形成不平行关系。
19．根据权利要求1 8的方法，盖密封区和第一层可焊接材料具有基本上矩形的构形，具有基本上以直角接合的四个支柱，第一层可焊接材料的一个支柱具有与其它三个支柱基本上不同的截面面积。
20．一种具有气密密封的微电子机械(MEM)，包括：
a．其上形成有有源MEM器件的衬底；
b．环绕有源MEM器件的盖密封区；
c．形成在盖密封区上的聚合环氧树脂层；
d．形成在聚合环氧树脂层上的盖，由此形成气密密封。
21．根据权利要求20的MEM，还包括形成在聚合环氧树脂层和有源MEM器件之间的隔离层。
22．根据权利要求20的MEM，还包括形成在聚合环氧树脂层和盖之间的隔离层。
23．一种显示器件，包括：
a．形成在半导体衬底上的调光器；
b．环绕调光器的盖密封区；
c．与盖密封区相邻并远离调光器设置的多个键合焊盘；
d．形成在盖密封区上的聚合环氧树脂层；
e．形成在聚合环氧树脂层上的透明盖，由此形成气密密封。
24．根据权利要求23的显示器件，其中调光器为衍射栅光阀。
25．根据权利要求23的显示器件，还包括形成在聚合环氧树脂层和显示器件之间的隔离层。
26．根据权利要求23的显示器件，还包括形成在聚合环氧树脂层和盖之间的隔离层。
27．一种使半导体器件形成气密密封的方法，包括以下步骤：
a．在半导体衬底上形成有源半导体器件；
b．环绕有源半导体器件形成基本上平面化的盖密封区；
c．在衬底的表面上和盖密封区外形成电连接到有源半导体器件的装置；
d．在盖密封区上形成聚合环氧树脂层；
e．提供透光盖上尺寸与盖密封区一致；
f．使盖与聚合环氧树脂层对准；以及
g．施加热熔化聚合环氧树脂并将盖密封到盖密封区。
28．根据权利要求27的方法，还包括形成在聚合环氧树脂层和显示器件之间的隔离层。
29．根据权利要求27的显示器件，还包括形成在聚合环氧树脂层和盖之间的隔离层。
30．一种具有气密密封的微电子机械(MEM)，包括：
a．其上形成有有源MEM器件的衬底；
b．环绕有源MEM器件的盖密封区；
c．形成在盖密封区上的玻璃熔块层；
d．形成在玻璃熔块上的盖，由此形成气密密封。
31．根据权利要求30的MEM，还包括形成在玻璃熔块层和有源MEM器件之间的隔离层。
32．根据权利要求30的MEM，还包括形成在玻璃熔块层和盖之间的隔离层。
33．一种显示器件，包括：
a．形成在半导体衬底上的调光器；
b．环绕调光器的盖密封区；
c．与盖密封区相邻并远离调光器设置的多个键合焊盘；
d．形成在盖密封区上的玻璃熔块层；
e．形成在玻璃熔块层上的透明盖，由此形成气密密封。
34．根据权利要求33的显示器件，其中调光器为衍射栅光阀。
35．根据权利要求33的显示器件，还包括形成在玻璃熔块层和显示器件之间的隔离层。
36．根据权利要求33的显示器件，还包括形成在玻璃熔块层和盖之间的隔离层。
37．一种使半导体器件形成气密密封的方法，包括以下步骤：
a．在半导体衬底上形成有源半导体器件；
b．环绕有源半导体器件形成基本上平面化的盖密封区；
c．在衬底的表面上和盖密封区外形成电连接到有源半导体器件的装置；
d．在盖密封区上形成玻璃熔块层；
e．提供透光盖上尺寸与盖密封区一致；
f．使盖与玻璃熔块层对准；以及
g．施加热熔化玻璃熔块并将盖密封到盖密封区。
38．根据权利要求37的方法，还包括形成在玻璃熔块层和显示器件之间的隔离层。
39．根据权利要求37的显示器件，还包括形成在玻璃熔块层和盖之间的隔离层。
40．一种光学器件，包括：
a．形成在半导体衬底上的MEM；
b．环绕MEM的盖密封区；
c．与盖密封区相邻并远离MEM设置的多个键合焊盘；
d．形成在盖密封区上的第一层可焊接材料；
e．形成在第一层可焊接材料上的焊料层；
f．形成在焊料层上的第二层可焊接材料；
g．形成第二层可焊接材料上的透明盖，由此形成气密密封。
41．根据权利要求40的光学器件，其中第一层可焊接材料为包括与盖密封区邻接的铬和与焊料邻接的钯的多层结构。
42．根据权利要求40的光学器件，其中第一层可焊接材料为包括与盖密封区邻接的钛、与钛邻接的镍以及镍和焊料之间的铂的多层结构。
43．根据权利要求40的光学器件，其中第二层可焊接材料为包括与焊料邻接的金和与盖邻接的铬的多层结构。
44．根据权利要求40的光学器件，其中第二层可焊接材料为包括与焊料邻接的金、与金邻接的镍以及镍和盖之间的铬。
45．一种光学器件，包括：
a．形成在半导体衬底上的MEM；
b．环绕MEM的盖密封区；
c．与盖密封区相邻并远离MEM设置的多个键合焊盘；
d．形成在盖密封区上的聚合环氧树脂层；
e．形成在聚合环氧树脂层上的透明盖，由此形成气密密封。
46．根据权利要求45的先学器件，还包括形成在聚合环氧树脂层和MEM之间的隔离层。
47．根据权利要求45的光学器件，还包括形成在聚合环氧树脂层和盖之间的隔离层。
48．一种光学器件，包括：
a．形成在半导体衬底上的MEM；
b．环绕MEM的盖密封区；
c．与盖密封区相邻并远离MEM设置的多个键合焊盘；
d．形成在盖密封区上的玻璃熔块层；
e．形成在玻璃熔块层上的透明盖，由此形成气密密封。
49．根据权利要求48的光学器件，还包括形成在玻璃熔块层和MEM之间的隔离层。
50．根据权利要求48的显示器件，还包括形成在玻璃熔块层和盖之间的隔离层。
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