CN1418048A - 元件内置模块及其制造方法 - Google Patents

元件内置模块及其制造方法 Download PDF

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Publication number
CN1418048A
CN1418048A CN02156334A CN02156334A CN1418048A CN 1418048 A CN1418048 A CN 1418048A CN 02156334 A CN02156334 A CN 02156334A CN 02156334 A CN02156334 A CN 02156334A CN 1418048 A CN1418048 A CN 1418048A
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China
Prior art keywords
module
insulation layer
electric insulation
including components
wiring
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CN02156334A
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CN1293790C (zh
Inventor
朝日俊行
菅谷康博
小松慎五
山本义之
中谷诚一
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Sony Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

元件内置模块包括：电绝缘层(101)，从形成在所述电绝缘层(101)的两个主平面的布线图形(102)以及布线基板(108)的表面上的布线(106)中选择的至少一个导电体，和在所述导电体之间进行连接的通路(103)，在所述电绝缘层(101)的内部埋入从电子元件和半导体中选择的至少一个元件(104)。所述导电体的至少一方由形成于所述布线基板(108)的表面上的布线(106)构成，所述埋入电绝缘层(101)内部的元件(104)在被埋入前被装载在所述布线基板上而成一体化。由此，在内置前可对半导体等元件进行安装检查或特性检查。结果可提高合格率。而且由于布线基板一体化地埋入，可提高强度。

Description

元件内置模块及其制造方法
技术领域
本发明涉及电路元件配置在电绝缘层内部的电路元件内置模块及其制造方法。
技术背景
在近年的电子仪器高性能化、小型化的潮流中，更加追求电路元件的高密度、高性能化。即使在装载电路元件的模块中也要求与高密度、高性能化相适应。作为高密度安装电路元件的方法，现在存在布线板多层化的倾向。在以往的玻璃与环氧树脂浸渍基板中，采用借助钻孔形成的通孔结构进行多层化，可靠性高，但不适合高密度安装。为此，也使用采用内部通路(ビア)进行连接的多层布线板作为谋求最高电路密度化的方法。通过内部通路连接，LSI间和元件间的布线图形可按最短距离连接，可以只进行必要的各层间的连接，在电路元件的安装性方面也有优势。而且，布线图形微细化也是高密度安装所必要的技术，线和空间在逐年减小。此外，还开发了在基板内部形成无源元件的3维安装。
但是，为了在基板内部形成无源元件，材料开发、形成精度、设备投资等方面的课题很多，开发速度也变慢。
另外，本申请人已经提出了在基板内部内置无源元件的方案(特开平11(1999)-220262号公报，美国专利6038133号)。但是，按照该方案的实施例，由于在基板内部埋入元件后形成布线，存在没有在内置前进行半导体等元件的安装检查或特性检查的问题。而且，由于布线基板不是一体化地埋入，也存在强度不太高的问题。
发明内容
为解决上述以往的问题，本发明目的在于提供在内置前可对半导体等元件进行安装检查或特性检查、提高合格率、强度高、生产率高、可高密度安装的元件内置模块。
为实现上述目的，本发明的元件内置模块包括：电绝缘层，从形成在所述电绝缘层的两个主平面的布线图形以及布线基板的表面上的布线中选择的至少一个导电体，和在所述导电体之间进行连接的通路，在所述电绝缘层的内部埋入从电子元件和半导体中选择的至少一个元件，其特征在于，所述导电体的至少一方由形成于所述布线基板的表面上的布线构成，所述埋入电绝缘层内部的元件在被埋入前被装载在所述布线基板上而成一体化。
而且，本发明的元件内置模块的制造方法，其中元件内置模块包括：电绝缘层，从形成在所述电绝缘层的两个主平面的布线图形以及布线基板的表面上的布线中选择的至少一个导电体，和在所述导电体之间进行连接的通路，在所述电绝缘层的内部埋入从电子元件和半导体中选择的至少一个元件，其特征在于包括，所述导电体的至少一方由形成于所述布线基板的表面上的布线构成，在所述布线基板上安装从半导体和电子元件中选择的至少一个元件，沿用半固化状态的热固性树脂构成的电绝缘层的厚度方向形成通路，在将所述布线基板放在外侧的状态下在所述电绝缘层中埋入所述元件，将所述电绝缘层固化。
附图说明
图1是本发明实施例1的元件内置模块的剖面图。
图2A-E是本发明实施例2的元件内置模块的制造工艺的剖面图。
图3是本发明实施例3的元件内置模块的剖面图。
图4是本发明实施例4的元件内置模块的剖面图。
图5是本发明实施例5的元件内置模块的剖面图。
图6是本发明实施例6的元件内置模块的制造工艺的剖面图。
图7A-C是本发明实施例7的元件内置模块的剖面图。
图8是本发明实施例8的元件内置模块的剖面图。
图9是本发明实施例9的元件内置模块的剖面图。
图10是本发明实施例10的元件内置模块的剖面图。
图11是本发明实施例11的元件内置模块的制造工艺的剖面图。
图12是本发明实施例12的元件内置模块的制造工艺的剖面图。
具体实施方式
本发明是一种元件内置模块，包括：电绝缘层，从所述电绝缘层的两个主平面的布线图形以及布线基板中选择的至少一个导电体，和在所述导电体之间进行连接的通路，在所述电绝缘层的内部埋入从电子元件和半导体中选择的至少一个元件。所述导电体的至少一个是布线基板，在所述电绝缘层内部埋入的元件在被埋入前被装载在所述布线基板上而成一体化。由此，在内置前可对半导体等元件进行安装检查或特性检查。结果可提高合格率。而且，由于布线基板被一体化地埋入，可提高强度。此外，可提供生产率高、可高密度安装的元件内置模块。
在本发明中，最好所述布线板是双面基板或多层布线板。由此容易形成复杂的电路。
而且在本发明中，所述电绝缘层内部的电子元件及/或半导体(以下也统称为“元件”)最好安装在所述电绝缘层的两主平面的布线图形及/或布线板上。通过在两主平面上安装元件、在电绝缘层中内置元件，可提供元件内置层密度更高的模块。
而且，在本发明中，最好将所述元件在相对于所述电绝缘层的主平面的法线方向中错开地配置。由此，能够以比安装机的元件安装间隔更高的密度配置元件。而且，可降低电绝缘层的厚度，这关系到高密度化。
而且，最好在配置在所述电绝缘层内部、安装在所述电绝缘层的两主平面的布线图形及/或布线板上的元件间插入屏蔽层。由此，可降低内置的元件间的干扰、外部对内置元件的干扰、由内置元件向外部的放射中的任意一种或全部，可使模块的特性提高。
而且，最好所述屏蔽层是金属箔布线图形或者电磁屏蔽材料。在使用金属箔布线图形时，可用与形成布线图形同样的工艺形成屏蔽层，容易生产。在使用电磁屏蔽材料时，可通过只改变电绝缘层的材料而作成，无工艺上的改变，也可降低干扰。
而且，最好在所述布线图形及/或布线板与所述电绝缘层相反一侧的主平面上安装元件。由此，可以不仅在电绝缘层上，而且在相反侧的主平面上也安装元件，谋求高密度化。
而且，所述电子元件最好是分立元件。由此，没有必要开发内置元件的新规格，提高模块自身的开发速度。而且，可利用现有分立元件的可靠性和精度，提高模块的特性。所述分立元件例如是所谓电感、电容、电阻等通用的片状元件。以下也将电感、电容及电阻统称为“LCR”。
而且，所述半导体最好是裸片。由此，与半导体封装相比，可以以更小的面积作成模块，可提供高密度的模块。
而且，最好用倒装芯片接合法将所述半导体裸片与所述布线图形和/或布线板连接。由此，谋求短布线化、高密度安装化。
而且，最好磨削和/或研磨所述半导体裸片。由此，可降低半导体的厚度，对模块的低高度化有效。
在所述制造方法中，在固化所述电绝缘层工艺后最好包括将元件安装在布线图形和/或布线板上的工艺。由此，可高效率地制造本发明的元件内置模块。
而且，最好在安装前在半导体晶片上磨削和/或研磨所述半导体。由此，可在晶片上一并进行半导体的薄型化，提高生产率。
而且，最好在安装所述半导体后，使用布线板来固定和搬运，进行磨削和/或研磨。由此，不对薄型化的半导体进行处理，就可制造本发明的元件内置模块。
而且，最好同时进行将所述元件埋设到电绝缘层上的工艺，和固化所述电绝缘层的工艺。由此，可减少工艺数，制造本发明的元件内置模块。
而且，最好通过形成铜箔布线图形来进行形成所述屏蔽层的工艺。由此，可高效率地制造本发明的元件内置模块。
而且，最好通过层叠电磁屏蔽层来进行形成所述屏蔽层的工艺。由此，可高效率地制造本发明的元件内置模块。
而且，在本发明中，也可以使所述电绝缘层内部的元件相对配置。特别是在高度高的元件和低的元件混合存在的情况下，如果使高度低的元件相对配置，可高密度地填充。
而且，也可以使所述电绝缘层的厚度方向的热膨胀系数为通路热膨胀系数的10倍以下。如果这样，则在元件内置模块的外侧还装载元件的情况下，例如即使经过焊锡回流工艺，由于电绝缘层的厚度方向的膨胀率不会变得太大，因此不会破坏通路的导通。
实施例1
以下参照图面说明本发明的实施例。图1是本实施例的元件内置模块的剖面图。在图1中，元件内置模块具有电绝缘层101，布线图形102，通路103，元件104和焊锡105，还包括具有布线图形106，108和内部通路的双面基板109。
电绝缘层101例如可使用绝缘性树脂及填料和绝缘性树脂的混合物等。最好电绝缘层含有树脂和填料，填料含量在50质量％以上，95质量％以下。另外，玻璃织品等加强物也可以。可使用热固性树脂、热塑性树脂、光固化性树脂等作为绝缘性树脂，通过使用耐热性高的环氧树脂或酚树脂、异氰酸酯树脂，可提高电绝缘层101的耐热性。而且，通过使用含有介电损耗因数低的氟化乙烯树脂例如聚四氟乙烯(PTFE树脂)、PPO(对聚苯氧)树脂(也称为PPE(聚苯撑乙醚)树脂)、液晶聚合物的树脂或使这些树脂变性的树脂，提高电绝缘层的高频特性。在使用填料和绝缘性树脂的混合物作为电绝缘层101时，通过选择填料和绝缘性树脂，可容易地控制电绝缘层101的线膨胀系数、导热度、介电常数等。例如，可使用氧化铝、氧化镁、氮化硼、氮化铝、氮化硅、聚四氟乙烯及二氧化硅等作为填料。通过使用氧化铝、氮化硼、氮化铝，有可能制造比以往的玻璃环氧基板导热度高的基板，可使内置的电子元件104的发热有效地散热。而且，氧化铝还有成本低廉的优点。在使用二氧化硅时，由于获得了介电常数低的电绝缘层101，比重也轻，最好作为携带电话等高频用途。使用氮化硅和聚四氟乙烯，例如“特氟纶”(注册商标为杜邦(デュポン)社)也可形成介电常数低的电绝缘层。而且，通过使用氮化硼可以降低线膨胀系数。而且也可以含有分散剂、着色剂、偶合剂或脱模剂。利用分散剂，可使绝缘性树脂中的填料分散的均匀性好。利用着色剂，由于可将电绝缘层着色，利用自动识别装置变得容易。利用偶合剂，由于可提高绝缘性树脂和填料的接合强度，可提高电绝缘层101的绝缘性。利用脱模剂，由于可提高金属模和混合物的脱模性，可提高生产率。
布线图形102由具有导电性的物质形成，例如可使用对金属箔或导电性树脂组成物、金属板加工所形成的引线框架。通过使用金属箔或引线框架，容易利用腐蚀等作成微细的布线图形。而且，在金属箔方面，也可通过使用脱模薄膜进行复制等形成布线图形。特别是由于铜箔既成本低廉又导电性高，所以最好。而且，通过在脱模薄膜上形成布线图形，处理布线图形变得容易。而且，通过使用导电性树脂组成物，可借助丝网印刷等制造布线图形。通过使用引线框架，可使用电阻低、厚的某种金属。而且，能够使用借助腐蚀进行的微细图形化或冲切加工等简单的制造方法。而且，通过在表面上进行电镀处理，可使这些布线图形102的耐腐蚀性和导电性提高。另外，通过使布线图形102与电绝缘层101的接触面粗糙化，可使之与电绝缘层101的粘接性提高。而且，也可以借助布线图形形成耦合器或过滤器等。在布线图形102的表面侧安装半导体及/或电子元件也可以。
通路103具有在布线图形102间进行连接的功能，例如由热固性导电物质构成。例如可使用金属粒子和热固性树脂混合形成的导电性树脂组成物作为热固性导电物质。可使用金、银、铜或镍等作为金属粒子。金、银、铜或镍由于导电性高而优选，铜导电性高，迁移也少，因而特别优选。使用以银被覆铜形成的金属粒子，可满足迁移少和导电性高两方面的特性。作为热固性树脂，例如可使用环氧树脂、酚树脂或异氰酸酯树脂。环氧树脂由于耐热性高而特别优选。而且，在通路孔形成后，也可利用电镀形成通路104。另外，通过金属和焊锡的组合等来形成也可以。
电子元件104例如可使用电容器、电感、电阻(LCR)等的片状元件或二极管、热敏电阻、开关等。由于内置分立元件，没有必要开发新的内置元件。而且，适合于精度或温度特性等方面用途的元件可使用已有元件，这关系到可靠性的提高。另外，也可以形成印刷电阻和薄膜电容器、电感器等。
焊锡105用于在布线图形102上安装电子元件104。在使用高温焊锡时，可防止利用回流安装模块时焊锡的再熔融。而且，通过使用无铅焊锡可减轻环保负担。尽管在本实施例中使用焊锡，但使用导电性粘接剂等也可以。
作为双面基板109，根据不同的目的可选择使用使玻璃织物浸渍了环氧树脂的基板(玻璃—环氧树脂基板)、使芳香族聚酰胺纤维无纺织物浸渍了环氧树脂的基板(芳香族聚酰胺—环氧树脂基板)、使纸浸渍了酚树脂的基板(纸—酚树脂基板)、陶瓷基板等任意的基板。
如果比较将元件装载在使用例如玻璃—环氧树脂基板的双面基板上、进行检查、之后埋入电绝缘层中的元件内置模块(实施例1)与不使用基板而以单体将元件埋入电绝缘层、之后在表面上形成布线图形的模块的强度，则即使由于基板的种类、复合的陶瓷的种类、数量、厚度等而不同，平均来看实施例1的弯曲强度也高约1.3倍左右。
(实施例2)
在实施例2中说明图1所示元件内置模块的制造方法的一个实施例。实施例2中使用的材料为在实施例1中所说明的材料。图2A到图2D是表示元件内置模块的制造工艺的一个实施例的剖面图。如图2A所示，在未固化的电绝缘层201中形成通孔207。可使用绝缘性树脂或填料和绝缘性树脂的混合物等作为电绝缘层201。最初，通过将填料和绝缘性树脂混合、搅拌，制作膏状的绝缘性树脂混合物。也可以向绝缘性树脂混合物中添加用于调整粘度的溶剂。通过将这种绝缘性树脂混合物成形为层状可形成电绝缘层201。作为形成层状的方法，例如可通过使用刮刀法等在薄膜上作成。通过在固化温度以下使之干燥，可使电绝缘层201的粘着性降低。通过这种热处理，由于板状电绝缘层失去了粘着性，因而薄膜的剥离变得容易。通过使之为半固化状态(B阶段(ステ一ジ))，变得容易处理。例如可以通过激光加工或钻孔加工，冲压加工进行制作来形成通孔207。由于激光加工可以以微细的节距形成通路，也不发生碎屑，因而是优选的。在激光加工时可使用二氧化碳激光器或YAG激光器、受激准分子激光器等。而且，在钻孔加工、冲压加工时，容易利用通用的某种已有设备形成通孔。由于使用未固化状态的电绝缘层201，加工变得容易。
另外，准备在载体206上形成布线图形202。可用如腐蚀、印刷这样的方法形成布线图形202。特别是在腐蚀的情况下，可利用光刻加工法等微细布线图形的形成法。作为载体，除PET(聚对苯二甲酸乙二酯)或PPS(对聚苯硫)这样的树脂薄膜外，可使用铜箔、铝箔这样的金属箔等。通过使用载体206，处理布线图形202变得容易。而且，也可以具有剥离层，以便容易在布线图形202和载体206之间剥下布线图形202。
在具有在布线图形208、210和其间进行连接的内通路209的两面布线基板211上的布线图形208处利用焊锡205安装元件204，之后，完成从安装检查和特性检查中选出的至少一种检查。也可以在布线图形210的下侧被覆保护薄膜212。
下面，在图2A中形成的通孔207中填充导电性通路膏。导电性通路膏可使用导电性粉末和树脂的混合物，例如金、银、铜、镍等金属粉或碳粉与热固性树脂或光固性树脂的混合物。使用铜的情况下，由于导电性高、迁移也少而最为理想。而且，也可以使用用铜涂附粉末的导电性粉末。作为树脂，可使用热固性树脂例如环氧树脂、酚树脂、异氰酸酯树脂、聚苯撑乙醚等。环氧树脂耐热性高，特别理想。而且，也可使用光固性树脂。在填充通路膏时可使用印刷或注入的方法。特别是在印刷时，可进行布线图形的形成。通过形成通路203，布线图形202和208之间的连接成为可能。而且，也可以形成内置于电绝缘层201中的电子元件204的空间。通过形成空间可抑制通路203的变形。
作为在具有在布线图形208、210和其间进行连接的内部通路209的两面布线基板211上的布线图形208中安装电子元件204的方法，除利用焊锡205进行的焊锡安装(膏焊锡的印刷或焊锡球)外，也可使用导电性粘接剂，例如将金、银、铜、银钯合金等用热固性树脂进行混炼形成的物质。而且，在安装的电子元件204和两面布线基板211之间也可以注入密封树脂。通过密封树脂的注入，在后续的工艺中将电子元件204埋设在电绝缘层201时可防止出现间隙。在密封树脂中可使用通常在倒装芯片接合中使用的下填树脂。安装后，可通过检查安装状态进行修复或故障的原因分析。
将具有填充了导电性通路膏的通路203的电绝缘层201配置在中央，在上侧配置在载体薄膜206上形成的布线图形202，在下侧配置安装了电子部件204的双面基板211，将这些部件如图2B那样位置对合层叠。
如图2B的层叠后，如图2C所示那样通过加压可在电绝缘层201中埋设电子元件204。在将热固性树脂用于绝缘性树脂的情况下，加压后通过加热使电绝缘层201中的热固性树脂固化，可形成埋设有电子元件204的板状电绝缘层201。加热在热固性树脂的固化温度以上的温度进行。通过该工艺，电绝缘层201和电子元件204机械性地牢固接合。而且，在通过加热使热固性树脂固化时，通过边加热边以100g/mm2到2kg/mm2的压力加压，可使半导体器件的机械强度提高。另外，在不使用片状电绝缘层时，也可以在加工成粉末或颗粒状后，使之熔融流入金属模中。而且，也可以在粉末原样流入后使之熔融成形。作为注入绝缘性树脂层的方法，可使用传递模(トランスフア一モ一ルド)或射出成形。
电绝缘层201固化后，剥离载体206，成为内置了电子元件204的电绝缘层201，按实施例1中说明的那样，可形成将双面基板211一体化的半导体器件。
(实施例3)
在实施例3中说明元件内置模块的一个实施例。以下参照图3对本发明的实施例进行说明。关于本实施例的元件内置模块，除与半导体306、凸起307、3层布线板308有关的部分外，与上述实施例1相同。因此，实施例3中使用的材料只要不特别说明就与实施例1、2相同。在图3中，元件内置模块包括电绝缘层301，布线图形302，通路303，电子元件304，导电性粘结剂305，半导体306，凸点307，布线板308。
半导体306与电子元件304同样地安装在布线板308上。通过将半导体306内置于电绝缘层301中，谋求模块的高功能化。半导体306例如使用晶体管，IC，LSI等半导体元件。半导体306既可以使用封装的，也可以使用裸片。此外，半导体306也可以使用密封树脂对半导体306或半导体306和凸点307、布线板308的连接部的至少一部分进行密封。通过注入密封树脂，在将半导体306埋设在电绝缘层301时可防止半导体303和布线板308之间出现间隙。在密封树脂中可使用通常的在倒装芯片接合中使用的下填树脂。在布线板308和半导体306的连接中，例如作为倒装芯片接合，使用导电性粘结剂、各向异性导电薄膜(ACF)、非导电性薄膜(NCF)和凸点。此外，通过使用芯片尺寸封装(CSP)，安装变得容易。
凸点307与半导体306和布线板308连接。例如可使用金或铜、焊锡等金属。凸点307可通过引线键合或电镀、印刷等形成。
布线板308用作为一般性布线板的玻璃环氧基板或陶瓷基板形成，为双面基板、层叠基板或内部通路连接的多层板等，由电绝缘层和布线图形以及通路构成。电绝缘层除绝缘性树脂或填料和绝缘性树脂的混合物、陶瓷以外，也可以加入玻璃织物等加强剂。而且，与实施例1、2同样的材料也可以。对于布线图形或通路也同样。由于使用与电绝缘层301相同的材料，热膨胀率等值相同，提高了可靠性。此外，在埋入电绝缘层前，预先检查布线板308和半导体306以及电子元件304的安装状态。由此，产品的合格率变高，而且可进行修复或故障的原因分析。在电子元件304和半导体306两者安装后进行检查的情况下，可确认半导体306的动作是有效的。借助布线板308，容易适应复杂的电路，半导体的再布线等，形成适合于复杂功能的模块的结构。
而且，在本实施例中，布线板的布线图形为3层，但层数不限于此，可使用任意的层数。
如果比较将元件装载在使用例如玻璃—环氧树脂基板的3层基板上、进行检查、之后埋入电绝缘层中的元件内置模块(实施例3)与不使用基板而以单体将元件埋入电绝缘层、之后在表面上形成布线图形的模块的强度，则即使由于基板的种类、复合的陶瓷的种类、数量、厚度等而不同，但平均来看实施例3的弯曲强度仍高约1.3倍以上。
(实施例4)
在实施例4中说明元件内置模块的一个实施例。以下参照图4对本发明的实施例进行说明。关于本实施例的元件内置模块，除在两面使用3层布线板408、电子元件304和半导体306相对配置外，与上述实施例1-3相同。因此，本实施例中对于没有特别说明的，与实施例1-3相同，相同名称的结构部件以及制造方法只要没有特别说明就具有相同的功能。
与实施例3不同，通过在上下两面配置布线板408，容易适应复杂的电路，半导体的再布线等，形成适合于复杂功能的模块的结构。此外，只通过在将半导体及电子元件安装在作成通常模块的布线板上的工艺后附加内置半导体及电子元件的工艺，就可形成高密度的元件内置模块。
(实施例5)
在实施例5中说明元件内置模块的一个实施例。以下参照图5对本发明的实施例进行说明。关于本实施例的元件内置模块，除在表层安装电子元件510、半导体506以及与元件内置层相关的部分外，与上述实施例1-4相同。因此，对于本实施例中没有特别说明的，与实施例1-4相同，相同名称的结构部件以及制造方法只要没有特别说明就具有相同的功能。
电绝缘层501内的电子元件504用与实施例4同样的制成通常模块的安装工艺安装，但在安装电子元件504的安置的性能方面，无论如何都有在电子元件和电子元件间设置间隔的必要。在本实施例中，考虑到相对的布线板508中元件的安装间隔，将电子元件504的位置错开地配置。由此，在同一面积上可安装的元件数增大，同时可使内置层的厚度较薄，可适合于更高密度安装的结构。
表面安装的电子元件510、半导体506可用作成通常模块同样的工艺进行安装，通过增加安装面，可以更高密度进行安装，作成适合多功能模块的结构。
(实施例6)
在实施例6中说明元件内置模块的一个实施例。以下参照图6对本发明的实施例进行说明。关于本实施例的元件内置模块，除表层安装的电子元件610、612，以及半导体611、613，以及与元件内置层相关的部分外，与上述实施例1-5相同。因此，本实施例中对于没有特别说明的，与实施例1-5相同，相同名称的结构部件以及制造方法只要没有特别说明就具有相同的功能。
电绝缘层601内的电子元件604、半导体606用与实施例4、5同样的制成通常模块的安装工艺安装，但由于在进行倒装安装时需要用于进行再布线的空间，因此无论如何都难以靠近半导体606配置电子元件。在本实施例中，通过在相对的布线板608中安装电子元件604，可以将其配置在半导体606的附近。由此，可增大在同一面积上可安装的元件数，作成可适合于更高密度安装的结构。
表面安装的电子元件610、半导体606可用与作成通常模块同样的工艺进行安装。通过在两个表面安装，可以更高密度进行安装，作成适合多功能模块的结构。
(实施例7)
在实施例7中说明图6所示元件内置模块的制造方法的一个实施例。以下参照图7A-7C对本发明的实施例进行说明。在实施例7中使用的材料，没有特别说明的与上述实施例相同，相同名称的结构部件以及制造方法只要没有特别说明就具有相同的功能。图7A-7C是表示元件内置模块的制造工艺的一个实施例的剖面图。如图7A所示，将安装有半导体706、电子元件704的布线板708、形成有通路703以及孔隙710的电绝缘层701位置对合地进行层叠。安装后也可对布线板708进行安装检查、修复。通过使电绝缘层701中形成的孔隙710与内置的半导体706、电子元件704的体积相同或在其以下，可防止在内置时出现间隙。
接着如图7B所示，在层叠后，通过加压，可将半导体706、电子元件704埋设在电绝缘层701中。在埋设后进行加热、使电绝缘层701固化。并且，利用通路703在布线图形702间进行连接。
在固化电绝缘层701后，如图7C所示，通过在表面安装半导体711、713以及电子元件714、712，可提供元件内置模块。
(实施例8)
在实施例8中说明元件内置模块的一个实施例。以下参照图8对本发明的实施例进行说明。关于本实施例的元件内置模块，除与元件内置层相关的部分外，与上述实施例1-7相同。因此，本实施例中对于没有特别说明的，与实施例1-7相同，相同名称的结构部件以及制造方法只要没有特别说明就具有相同的功能。
电绝缘层801内的电子元件804和半导体806用制成通常模块的安装工艺安装，通过在布线板808中进行两面安装，容易增加元件内置层。即，在3层布线板808的上侧通过布线图形802连接电子元件810、半导体811，在3层布线板808的下侧也连接埋设了电子元件的电绝缘层，在该电绝缘层表面连接电子元件812。
由此，可增大在同一面积上可安装的元件数，可作成适合于更高密度安装的结构。
(实施例9)
在实施例9中说明元件内置模块的一个实施例。以下参照图9对本发明的实施例进行说明。关于本实施例的元件内置模块，除与半导体的薄形化相关的部分外，与上述实施例1-8相同。因此，在本实施例中没有特别说明的与实施例1-8相同，相同名称的结构部件以及制造方法只要没有特别说明就具有相同的功能。
通过使半导体906薄形化，可降低元件内置模块的厚度。薄型化可使用在研磨半导体晶片后进行安装的方法，或将半导体906安装在布线板908上后进行磨削/研磨的方法。在前者的情况下，由于可以晶片为单位加工半导体906，对生产率有利。在后者的情况下，由于不必对薄形化的半导体906进行处理，提高了操作性。另外，半导体906不仅可表面安装，也可以存在于内部。
(实施例10)
在实施例10中说明元件内置模块的一个实施例。以下参照图10对本发明的实施例进行说明。关于本实施例的元件内置模块，除形成屏蔽电极这一点外，与上述实施例1-9相同。因此，在本实施例中没有特别说明的与实施例1-9相同，相同名称的结构部件以及制造方法只要没有特别说明就具有相同的功能。
屏蔽电极1010可用与布线图形1002同样的材料、工艺形成。通过形成屏蔽电极1010，可使内置的半导体1006或电子元件1004间的电磁波的干扰降低。通过使屏蔽电极1010处于地电位，谋求模块的稳定化。此外，屏蔽电极并不限于1层。
(实施例11)
在实施例11中说明元件内置模块的一个实施例。以下参照图11对本发明的实施例进行说明。关于本实施例的元件内置模块，除形成屏蔽电极层1110这一点外，与上述实施例1-10相同。因此，在本实施例中没有特别说明的与实施例1-10相同，相同名称的结构部件以及制造方法只要没有特别说明就具有相同的功能。
屏蔽电极层1110通过仅改变电绝缘层1101的填料就可使内置的半导体1106或电子元件1104间的电磁波的干扰降低。作为填料，可使用导磁率的复数成分高、吸收电磁波(转换成热)的材料。例如可使用铁氧体粉末等。借助与电绝缘层1101相同的工艺，可追加屏蔽功能。此外，屏蔽电极层并不限于1层。
(实施例12)
在实施例12中说明元件内置模块的一个实施例。以下参照图12对本发明的实施例进行说明。关于本实施例的元件内置模块，除与电绝缘层1201内的电子元件1204a、b有关的一点外，与上述实施例1-11相同。因此，在本实施例中没有特别说明的与实施例1-11相同，相同名称的结构部件以及制造方法只要没有特别说明就具有相同的功能。
电绝缘层1201内的电子元件1204a、1204b用与实施例4同样的制成通常模块的安装工艺安装，例如由于电容器的容量等，不同尺寸的电子元件很多。在本实施例中，有效利用电子元件1204a、1204b高度的不同来提高安装密度。如图12那样将高度低的电子元件1204a的元件相对安装，有效地利用通常无用的电子元件1204a的上部空间，可作成适合于更高密度安装的结构。
表面安装的电子元件1204、半导体1206可用与作成通常模块同样的工艺进行安装，通过增加安装面，可以更高密度进行安装，作成适合多功能模块的结构。
如以上说明的，按照本发明，通过电绝缘层、在所述电绝缘层的两主平面上形成的布线图形、在所述布线图形间进行连接的通路，以及将安装在所述布线图形上的电子元件以及/或半导体配置在所述电绝缘层内部的元件内置模块，可提供在电绝缘层中内置电子元件及/或半导体，厚度薄、安装密度高的元件内置模块。
例1
在本实施例中按以下工艺制作电绝缘层。将热固性液态环氧树脂和SiO2作为填料，填料按质量比为70％的比例称量，利用搅拌混合机制作混合膏体。利用刮刀法在聚对苯二甲酸乙二酯(PET)的脱模薄膜(厚度：75μm)上将制作的混合膏体加工成700μm厚的片状。加工成片状后，经过105℃的干燥工艺作成未固化状态的电绝缘层。可将重量比选择在可保持片状的96％以下。片的厚度最好为容易施行干燥工艺的200μm以下，但也许根据内置模块的高度形成厚的片，在片形成后，通过层叠可获得所希望的厚度。
接着在对应于内部通路的位置上用二氧化碳激光器形成通孔(直径φ150μm)。通孔形成后，印刷填充作为铜粉(粒径不足7μm)和热固性环氧树脂的混合物的通路膏体。在印刷填充时使用橡皮滚，将PET薄膜作为掩模。通孔直径小适合于高密度安装。实用性地可使用600μm以下的尺寸。
与上述工艺并行，在利用粘合剂在PET载体薄膜上(厚75μm)贴附的15μm厚铜箔(单面粗化)上通过层压贴附光致抗蚀剂薄膜，通过紫外线曝光、显影、使用氯化铁进行腐蚀，形成布线图形。作为布线设计规则，最小L/S(线/空间)为100/100μm。L/S也小适合高密度安装，在安装半导体裸片的情况下200/200μm以下较妥当。
在布线图形上安装电子元件及/或半导体。在电子元件的安装中使用导电性粘合剂。用网版(筛眼：#400/英寸)在布线图形上涂布导电性粘合剂，配置1005尺寸的电子元件后，用干燥机(温度150℃)进行固化。作为电子元件，按照构成的模块，使用LCR等片状元件和热敏电阻或二极管。内置的电子元件尺寸也小适合于高密度安装，最好在1.6mm以下(3216尺寸)。在封装的情况下，半导体的安装与电子元件相同，使用导电性粘合剂。此外，在裸片的情况下形成金凸点，倒装芯片安装。此外，在布线板上也同样安装电子元件和/或半导体。在布线板的情况下，在安装电子元件时，使用焊锡安装。
对安装的电子元件进行外观检查，修复发生安装错误(元件脱落或元件立起)的部位。通过电连接检查，也对安装的半导体进行安装状态的确认。之后进行电路块的功能检查，也确认半导体自身的特性。对特性不合格的部位进行元件替换。
按照上述工艺进行制作，以识别标记作为基准，将电绝缘层和安装了电子元件和/或半导体的布线图形进行位置对合，层叠，加压(5Mpa)。通过加压，将电绝缘层和电子元件和/或半导体埋设在电绝缘层中。埋设后，一边以相同的压力加压，一边进行温度200℃、时间2小时的加热，使电绝缘层固化。在电绝缘层固化的同时复印布线图形。
电绝缘层固化后，剥离PET载体，形成元件内置模块。该元件内置模块具有在表面安装电子元件和/或半导体的空间，在内部也配置电子元件和/或半导体，以相同的安装面积进行比较，可达到元件可安装面积约50％的高密度安装化。
例2
在本实施例中，按如图12所示的结构制作试料。作成在内置了电子元件的电绝缘层的上下配置布线板的结构，利用通路在上下的布线板间进行连接。电子元件使用0603尺寸的片状元件。电绝缘层以SiO2作为填料，通过调整质量比，制作使热膨胀系数改变的试料。电绝缘层的厚度为400μm。布线板使用玻璃环氧基板(A基板)、由与电绝缘层相同的材料形成的布线板(B基板)。布线板的厚度为400μm。通路为铜粉和树脂的混合物。通路、电绝缘层(仅电绝缘层)、结构体的电绝缘层的热膨胀系数示于表1。
表1试料No.和热膨胀率(单位：ppm)
试料No.   1   2   3   4   5   6   7   8   9   10
布线板   A   B   A   B   A   B   A   B   A   B
通路                                                 30
仅电绝缘层         20         47        100        150        200
结构体的电绝缘层   43   17   98   45   190   101   301   155   488   200
电绝缘层/通路   1.43   0.57   3.27   1.50   6.33   3.37   10.0   5.17   16.3   6.67
在借助作为布线板的玻璃环氧基板(A基板)，和用与电绝缘层相同材料形成的基板(B基板)形成结构体时，热膨胀率是不同的。电绝缘层和B基板由于没有加入加强材料，显示出在XYZ方向上各向同性的热膨胀率，玻璃环氧树脂基板由于加入了玻璃织物，其XY方向和Z方向的热膨胀率不同。前述A基板的热膨胀率为在XY方向为10ppm，Z方向为150ppm的材料。在成为结构体的情况下，电绝缘层由于与布线板固接，在XY方向被强制固定在杨氏模量高的布线板(A基板)上。因此，在XY方向上不能伸长，Z方向的热膨胀率增加。在将作为相同材料的B基板用于布线板的情况下，热膨胀率不变化。在对制作的样品进行热循环试验(-50℃到270℃)时检查通路的电阻值(空隙数)(表2)。
表2
试料No.     1     2     3     4     5     6     7     8     9     10
电绝缘层/通路     1.43     0.57     3.27     1.50     6.33     3.37     10.0     5.17     16.3     6.67
空隙数(/1000)     0     0     0     1     0     0     0     2     195     1
实验结果，试料No.9的样品中发生许多空隙。这被认为是由于通路的热膨胀率和电绝缘层的热膨胀率的差异造成的。即使电绝缘层为相同材料，在结构体形成时热膨胀率的差异也对通路的可靠性造成影响，通过使热膨胀率的比在10倍以内可提供可靠性高的元件内置模块。

Claims (24)

1.一种元件内置模块，包括：
电绝缘层，从形成在所述电绝缘层的两个主平面的布线图形以及布线基板的表面上的布线中选择的至少一个导电体，和在所述导电体之间进行连接的通路，
在所述电绝缘层的内部，埋入从电子元件和半导体中选择的至少一个元件，
其特征在于，
所述导电体的至少一方由形成于所述布线基板的表面上的布线构成，
所述埋入电绝缘层内部的元件在被埋入前被装载在所述布线基板上而成一体化。
2.如权利要求1的元件内置模块，其特征在于，在所述布线板的外侧主平面上安装从电子元件和半导体中选择的至少一个元件。
3.如权利要求1的元件内置模块，其特征在于，所述布线板是从双面基板和多层布线板中选择的至少一个基板。
4.如权利要求1的元件内置模块，其特征在于，在将所述元件埋入所述电绝缘层内部前进行从安装检查和特性检查中选择的至少一个检查。
5.如权利要求1的元件内置模块，其特征在于，将所述元件在所述电绝缘层的截面方向上错开地配置。
6.如权利要求1的元件内置模块，其特征在于，在配置在所述电绝缘层内部、安装在所述电绝缘层的两主平面的布线基板上的至少一个元件间插入屏蔽层。
7.如权利要求6的元件内置模块，其特征在于，所述屏蔽层是金属箔布线图形或者电磁屏蔽材料。
8.如权利要求1的元件内置模块，其特征在于，所述电子元件是分立元件。
9.如权利要求1的元件内置模块，其特征在于，所述半导体是半导体裸片。
10.如权利要求9的元件内置模块，其特征在于，用倒装芯片接合法将所述半导体裸片与从所述布线图形和/或布线板中选择的至少一个连接。
11.如权利要求9的元件内置模块，其特征在于，磨削或研磨所述半导体裸片。
12.如权利要求1的元件内置模块，其特征在于，将所述元件相对配置在所述电绝缘层内部。
13.如权利要求1的元件内置模块，其特征在于，所述电绝缘层厚度方向的热膨胀系数为通路热膨胀系数的10倍以下。
14.如权利要求1的元件内置模块，其特征在于，所述电绝缘层包括树脂和填料，填料的含量在50质量％以上并且95质量％以下。
15.一种元件内置模块的制造方法，所述元件内置模块包括：
电绝缘层，从形成在所述电绝缘层的两个主平面的布线图形以及布线基板的表面上的布线中选择的至少一个导电体，和在所述导电体之间进行连接的通路，
在所述电绝缘层的内部埋入从电子元件和半导体中选择的至少一个元件，其特征在于，包括：
所述导电体的至少一方由形成于所述布线基板的表面上的布线构成，
在所述布线基板上安装从半导体和电子元件中选择的至少一个元件，
沿用半固化状态的热固性树脂构成的电绝缘层的厚度方向形成通路，
在使所述布线基板处于外侧的状态下在所述电绝缘层中埋入所述元件，
将所述电绝缘层固化。
16.如权利要求15的元件内置模块的制造方法，其特征在于，在将所述元件埋入所述电绝缘层内部前进行从安装检查和特性检查中选择的至少一个检查。
17.如权利要求15的元件内置模块的制造方法，其特征在于，将布线板一体化在所述电绝缘层的两面上。
18.如权利要求15的元件内置模块的制造方法，其特征在于，在所述至少一个布线板中两面安装所述元件。
19.如权利要求15的元件内置模块的制造方法，其特征在于，在所述通路形成和所述元件的埋入之间，在所述电绝缘层上形成屏蔽层。
20.如权利要求19的元件内置模块的制造方法，其特征在于，通过形成铜箔布线图形进行所述屏蔽层的形成。
21.如权利要求19的元件内置模块的制造方法，其特征在于，通过层叠电磁屏蔽层进行所述屏蔽层的形成。
22.如权利要求15的元件内置模块的制造方法，其特征在于，在安装之前在半导体晶片上磨削或研磨所述半导体。
23.如权利要求15的元件内置模块的制造方法，其特征在于，在安装所述半导体之后进行所述半导体的磨削或研磨。
24.如权利要求15的元件内置模块的制造方法，其特征在于，在将从所述半导体和电子元件中选择的至少一个元件埋设在所述电绝缘层中的同时，同时进行所述电绝缘层的固化。
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