CN1514953A - 相移光刻掩模的曝光控制 - Google Patents
相移光刻掩模的曝光控制 Download PDFInfo
- Publication number
- CN1514953A CN1514953A CNA028115449A CN02811544A CN1514953A CN 1514953 A CN1514953 A CN 1514953A CN A028115449 A CNA028115449 A CN A028115449A CN 02811544 A CN02811544 A CN 02811544A CN 1514953 A CN1514953 A CN 1514953A
- Authority
- CN
- China
- Prior art keywords
- pattern
- phase
- shift
- mask
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
Abstract
Description
Claims (55)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29678801P | 2001-06-08 | 2001-06-08 | |
US60/296,788 | 2001-06-08 | ||
US30414201P | 2001-07-10 | 2001-07-10 | |
US60/304,142 | 2001-07-10 | ||
US09/972,428 US6852471B2 (en) | 2001-06-08 | 2001-10-05 | Exposure control for phase shifting photolithographic masks |
US09/972,428 | 2001-10-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1514953A true CN1514953A (zh) | 2004-07-21 |
CN1282032C CN1282032C (zh) | 2006-10-25 |
Family
ID=27404462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028115449A Expired - Fee Related CN1282032C (zh) | 2001-06-08 | 2002-06-07 | 相移光刻掩模的曝光控制 |
Country Status (7)
Country | Link |
---|---|
US (4) | US6852471B2 (zh) |
EP (1) | EP1393132B1 (zh) |
JP (1) | JP2005517282A (zh) |
CN (1) | CN1282032C (zh) |
AT (1) | ATE555420T1 (zh) |
AU (1) | AU2002349203A1 (zh) |
WO (1) | WO2002101466A2 (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6852471B2 (en) | 2001-06-08 | 2005-02-08 | Numerical Technologies, Inc. | Exposure control for phase shifting photolithographic masks |
US6777143B2 (en) * | 2002-01-28 | 2004-08-17 | Taiwan Semiconductor Manufacturing Company | Multiple mask step and scan aligner |
US7581203B2 (en) * | 2003-06-30 | 2009-08-25 | Agere Systems Inc. | Method and apparatus for manufacturing multiple circuit patterns using a multiple project mask |
CN100380231C (zh) * | 2003-08-28 | 2008-04-09 | 力晶半导体股份有限公司 | 光学光刻方法 |
US20050054210A1 (en) * | 2003-09-04 | 2005-03-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple exposure method for forming patterned photoresist layer |
US7232630B2 (en) * | 2003-12-11 | 2007-06-19 | Synopsys, Inc | Method for printability enhancement of complementary masks |
US7448012B1 (en) | 2004-04-21 | 2008-11-04 | Qi-De Qian | Methods and system for improving integrated circuit layout |
US20080085471A1 (en) * | 2006-10-10 | 2008-04-10 | Anderson Brent A | Photolithographic method using multiple photoexposure apparatus |
US8431328B2 (en) * | 2007-02-22 | 2013-04-30 | Nikon Corporation | Exposure method, method for manufacturing flat panel display substrate, and exposure apparatus |
US8071278B1 (en) * | 2007-04-16 | 2011-12-06 | Cadence Design Systems, Inc. | Multiple patterning technique using a single reticle |
US20080299499A1 (en) * | 2007-05-30 | 2008-12-04 | Naomasa Shiraishi | Exposure method, method of manufacturing plate for flat panel display, and exposure apparatus |
US7951722B2 (en) * | 2007-08-08 | 2011-05-31 | Xilinx, Inc. | Double exposure semiconductor process for improved process margin |
US7906253B2 (en) * | 2007-09-28 | 2011-03-15 | Texas Instruments Incorporated | System and method for making photomasks |
CN101576708B (zh) * | 2008-06-13 | 2011-03-23 | 上海丽恒光微电子科技有限公司 | 光刻构图方法 |
US9005848B2 (en) * | 2008-06-17 | 2015-04-14 | Photronics, Inc. | Photomask having a reduced field size and method of using the same |
WO2010117626A2 (en) * | 2009-03-31 | 2010-10-14 | Christophe Pierrat | Lithography modelling and applications |
US9005849B2 (en) * | 2009-06-17 | 2015-04-14 | Photronics, Inc. | Photomask having a reduced field size and method of using the same |
WO2013185176A1 (en) * | 2012-06-12 | 2013-12-19 | C. Rafin & Co Pty Ltd | A method and apparatus for facilitating the management of health and security |
US20140205934A1 (en) * | 2013-01-21 | 2014-07-24 | Xilinx, Inc. | Single reticle approach for multiple patterning technology |
CN108319115B (zh) * | 2018-02-28 | 2020-08-21 | 南昌航空大学 | 一种基于虚拟层动态调制的二元数字掩模光刻方法 |
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-
2001
- 2001-10-05 US US09/972,428 patent/US6852471B2/en not_active Expired - Lifetime
-
2002
- 2002-06-07 JP JP2003504165A patent/JP2005517282A/ja active Pending
- 2002-06-07 AT AT02778961T patent/ATE555420T1/de active
- 2002-06-07 AU AU2002349203A patent/AU2002349203A1/en not_active Abandoned
- 2002-06-07 WO PCT/US2002/018480 patent/WO2002101466A2/en active Search and Examination
- 2002-06-07 EP EP02778961A patent/EP1393132B1/en not_active Expired - Lifetime
- 2002-06-07 CN CNB028115449A patent/CN1282032C/zh not_active Expired - Fee Related
-
2004
- 2004-05-07 US US10/841,276 patent/US7422841B2/en not_active Expired - Lifetime
-
2008
- 2008-04-07 US US12/080,886 patent/US7629109B2/en not_active Expired - Lifetime
-
2009
- 2009-10-16 US US12/589,033 patent/US20100040965A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US7629109B2 (en) | 2009-12-08 |
US20040209193A1 (en) | 2004-10-21 |
WO2002101466A3 (en) | 2003-10-09 |
US6852471B2 (en) | 2005-02-08 |
WO2002101466A2 (en) | 2002-12-19 |
EP1393132B1 (en) | 2012-04-25 |
AU2002349203A1 (en) | 2002-12-23 |
JP2005517282A (ja) | 2005-06-09 |
US20080187869A1 (en) | 2008-08-07 |
US20100040965A1 (en) | 2010-02-18 |
CN1282032C (zh) | 2006-10-25 |
ATE555420T1 (de) | 2012-05-15 |
US20020187636A1 (en) | 2002-12-12 |
US7422841B2 (en) | 2008-09-09 |
EP1393132A2 (en) | 2004-03-03 |
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