CN1543263A - 数据存储系统用电阻加热装置 - Google Patents

数据存储系统用电阻加热装置 Download PDF

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CN1543263A
CN1543263A CNA2004100386003A CN200410038600A CN1543263A CN 1543263 A CN1543263 A CN 1543263A CN A2004100386003 A CNA2004100386003 A CN A2004100386003A CN 200410038600 A CN200410038600 A CN 200410038600A CN 1543263 A CN1543263 A CN 1543263A
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斯蒂芬・马特
斯蒂芬·马特
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Abstract

数据存储系统中的电阻加热器由化学无序的CrXV100－X合金形成。该合金表现出高的电阻温度系数(TCR)，从而可根据其电阻推断加热器温度，加热和冷却时，极小的电阻－温度滞后现象，高熔点和高温下电阻的时间稳定性。电阻加热器用在数据存储系统中，包括使用加热器热辅助记录，或者导致写入头极尖的突出，以降低磁头－硬盘间距的磁记录硬盘驱动器，和把悬臂尖端上的“纳诺加热器”用于磁性介质上的热辅助记录，或者聚合物介质上的热－机械记录的基于原子力显微术(AFM)的系统。

Description

数据存储系统用电阻加热装置
技术领域
本发明涉及电阻加热装置，更具体地说，涉及数据存储系统例如基于“热辅助”磁记录(TAMR)和原子力显微术(AFM)数据存储系统中使用的加热器。
背景技术
电阻加热装置应用于诸如硬盘驱动器之类磁记录数据存储系统中。一种这样的应用是TAMR。在传统的磁记录硬盘驱动器中，通过使用微型薄膜感应写入头，数字信息被保存在磁介质中。在浮动块的后表面上模制写入头，浮动块还具有允许浮动块浮在旋转磁盘的表面上方的薄层空气上的空气支撑面(ABS，air bearing surface)。写入头是具有位于磁轭的两极之间的薄膜导电线圈的感应头。当向线圈施加写入电流时，极尖提供横越间隙的局部磁场，所述磁场把磁盘上的记录层磁化成两种不同磁状态(二进制数据位)之一。选择用作磁盘上的记录层的磁性材料，以具有足够的矫顽力，从而磁化数据位被准确写入，并保持它们的磁化状态，直到被新的数据位改写为止。已知增大记录层材料的矫顽力可增大写入的二进制位的热稳定性，但是需要较强的写入磁场。关于这种问题提出一种解决方案是TAMR，其中在写入过程中，介质中的磁性材料被局部加热到其居里温度附近，从而对于写入来说，矫顽力足够低，但是对于室温下记录的二进制位的热稳定性来说，矫顽力又足够高。
在不同于TAMR的应用中已提出在磁记录硬盘驱动器中使用电阻加热装置。在这种应用中，电阻加热器位于感应写入头的两极附近。加热器扩大了写入极，并使极尖从ABS突出，从而更接近于磁盘。
基于原子力显微术(AFM)的数据存储系统已被提出用于磁性介质上的热辅助记录和聚合物介质上的热-机械记录。在这两种基于AFM的数据存储系统中，电阻“纳诺加热器”位于悬臂的尖端，以便加热介质。
在上述申请中提出的用作电阻加热器的材料包括石墨碳、铝(Al)、铬(Cr)、镍铬合金(NiCr)、钽(Ta)和钛(Ti)。
需要一种电阻加热装置用新材料。
发明内容
本发明是数据存储系统中的电阻加热器，其中电阻材料是化学无序的CrXV100-X合金。该合金表现出高的电阻温度系数(TCR)，从而可根据其电阻推断加热器温度，加热和冷却时，极小的电阻-温度滞后现象，高熔点，和高温下电阻的时间稳定性。电阻加热器用在数据存储系统中，包括使用加热器热辅助记录，或者导致写入头极尖的突出，以降低磁头-硬盘间距的磁记录硬盘驱动器，和把悬臂尖端上的“纳诺加热器”用于磁性介质上的热辅助记录，或者聚合物介质上的热-机械记录的基于原子力显微术(AFM)的系统。
为了更充分地理解本发明的本质和优点，应结合附图，参考下述详细说明。
附图说明
图1是各种CrV合金的电阻-温度曲线图。
图2是各种CrV合金的电阻-时间曲线图。
图3A-3B分别图解说明具有加热装置的TAMR写入头的一部分的空气支撑面(ABS)视图和侧剖视图。
图4A-4B图解说明具有用于热突出的加热装置的空气支撑浮动块，图4A表示在不存在来自加热装置的热量的情况下，写入极“凹陷”，图4B表示在存在来自加热装置的热量的情况下，写入极突出。
图5是具有位于其尖端的加热装置的悬臂的透视图。
具体实施方式
加热装置用电阻材料应表现出(1)足够高的电阻温度系数(TCR)，从而可由其电阻推断加热器温度，(2)当加热和冷却时，可以忽略的或者最好不存在电阻对温度的滞后现象，(3)高的熔点，和(4)升高的温度下，电阻的时间稳定性。
已证明各种固溶(化学无序(chemically disordered))铬-钒(CrV)合金满足这些要求。从公布的CrV相图，已知CrXV100-X(X的所有值是原子百分比)并不表现任何化学有序相。于是，在制备磁记录头过程中需要的任意退火工艺中，不会发生由化学排序引起的电阻与温度曲线的任意变化。所有CrV合金组合物的熔点高于1500℃。
为了研究CrV合金膜的传送特性，从合金目标利用DC磁控管溅射，在玻璃基体上生长各种组成的30纳米厚CrXV100-X膜。样本放置在位于炉子中的铜块上。温度从室温升高到300℃，降低到50℃，随后升高到300℃，以便测量薄膜的TCR和电阻对温度的滞后现象(hysteresis)。最后薄膜在300℃退火(annealing)30000秒，测量它们的电阻的时间稳定性。在温度循环中，样本保持在稳定的氮气气流下，以防止氧化。
利用经典的四探针测量法测量薄膜的薄层电阻，以便消除导线(lead)电阻。图1中表示了电阻-温度曲线，图2中表示了电阻-时间曲线。研究的CrV组合物是Cr23V77、Cr55V45、Cr64V36、Cr75V25(其中下标数字代表原子百分比)，并与纯Cr相比。虽然Cr23V77表现出电阻的较大的电阻-温度滞后现象，当退火时，电阻增大43％，Cr55V45表现出较小的滞后现象，但是当退火时电阻仍然增大9.8％。Cr64V36和Cr75V25薄膜表现出退火时，突出的电阻稳定性，同时电阻分别只增大1.3％和0.2％。Cr64V36不表现出滞后现象，Cr75V25表现出少许滞后现象，但是在初始加热循环之后，滞后现象消失。
合金的TCR值随着Cr含量的增大而降低。在第一加热循环之后测量该值，以便消除电阻-温度滞后现象，Cr23V77的TCR为1360ppm/℃，Cr55V45的TCR为1310ppm/℃，Cr64V36的TCR为1050ppm/℃，Cr75V25的TCR为1020ppm/℃，Cr的TCR为700ppm/℃。这些值足够高，足以确定几摄氏度内的加热器温度。根据图1和2中所示的数据，可得出优选Cr含量在50和90原子百分比之间(50＜x＜90)的固溶CrXV100-X合金，因为它们表现出(a)较小或者根本没有电阻-温度滞后现象，(b)电阻方面较小的时间变化，和(c)足以确定几摄氏度内的加热器温度TCR值。也可借助除溅射沉积之外的方法，例如电镀(对于厚膜优选电镀)，形成本发明的CrXV100-X合金。
图3A-3B图解说明了在美国专利6493183中说明的TAMR写入头的一部分。TAMR写入头的感应部分包括磁轭Y和线圈C(在图3B的剖视图中表示了线圈C的节段)。磁头安装在磁头托架，例如空气支撑浮动块100的后端(trailing end)102上。当写入电流通过线圈C时，在两个磁极P1和P2之间的写入间隙WG中产生磁场，如图3A中所示，图3A中，从直接位于磁盘10上方的浮动块的空气支撑面(ABS)观察写入头极尖(pole tip)13、15。图3B还表示了面对ABS，并且具有位于保护性外涂层12之下的磁记录层11的磁盘10的一部分。在该TAMR磁头中，加热装置是装在磁极P1和P2之间的写入间隙WG中的电阻加热器20。图3A表示了与加热器20连接的电导线。导线23由为良好的导电、导热体的材料形成，例如铜、铑或金。加热器20非常接近磁盘10，使得当通过暴露于极尖13、15之间的磁场记录数据位的时候，磁记录层11可被加热到其居里温度附近或者高于其居里温度，从而降低其矫顽力。所述磁场只需克服磁记录层11的降低的矫顽力值，即可写入数据位。当磁盘10在磁头下旋转时，磁记录层11冷却，并保持磁场的符号。虽然图3A-3B表示了位于写入间隙WG中的加热器20，不过加热器也可位于写入间隙之外，例如在图3A中的磁极P2之外，或者磁极P1之下。另外，如同在美国专利申请2003/0021191A中公布的那样，加热器可形成为线圈C的一部分，这种情况下，线圈的多个部分用作相对于加热器的电导线。
除了用作在TAMR系统中加热介质的加热器之外，加热器还可用在磁记录系统中，导致感应写入头的极尖突出，以便移动极尖，使之更接近于介质，如在美国专利5991113中所述那样。在图4A-4B中表示了加热装置的这种应用。加热装置是沉积为空气支撑浮动块100′的后端102′的薄膜的电阻加热器20′，空气支撑浮动块100′在磁记录盘驱动器中的磁盘的表面上方浮动。当不向加热器20′施加电流时，如图4A中所示，写入头极尖13′、15′是“凹陷的”。但是，当施加电流时，来自加热器20′的热量导致写入磁极的扩展，和极尖13′、15′的突出，从而更接近于磁盘，如图4B中所示。
加热装置的另一种应用是作为位于悬臂尖端的“纳诺加热器”(nanoheater)，所述这种悬臂供提出的基于原子力显微术(AFM)的数据存储之用。在一种这种应用中，如同在TAMR中那样使用纳诺加热器加热介质，以便降低其矫顽力，如美国专利6233206中所述。在另一种这种应用中，纳诺加热器是热-机械数据存储系统的一部分，在所述热-机构数据存储系统中，电阻加热的纳诺加热器被用于“融化”聚合物介质的各部分，如同在美国专利6218086及U.Drechsler等在瑞士Lugano的Micro-and Nano-Engineering conference(2002年9月16-19日)上介绍的“Cantilevers with nano-heaters forthermomechanical storage application fabricated with mix-matche-beam-optical lithography”中描述的那样。图5中表示了具有位于其尖端的纳诺加热器20″的AFM型悬臂200。悬臂200可由导电材料形成，或者可在悬臂200上模制(pattern)导电体用作相对于加热器20″的导线。
虽然参考优选实施例，表示和说明了本发明，但是在不脱离本发明的精神和范围的情况下，本领域的技术人员可在形式和细节方面做出各种改变。因此，公开的发明只应被看作是例证性的，而不是对发明范围的限定，本发明的范围只由附加权利要求限定。

Claims (17)

1、一种加热装置，包括：
基体；和
形成于所述基体上并包括基本由Cr和V组成的合金的加热器。
2、按照权利要求1所述的装置，其中合金的组成为CrxV100-x，x介于50～90原子百分比之间。
3、按照权利要求1所述的装置，还包括与加热器连接的导电体，其中当向导电体施加电流时，加热器借助电阻产生热量。
4、按照权利要求1所述的装置，其中基体是空气支撑浮动块的后端，其中加热器是形成所述表面上的薄膜。
5、按照权利要求4所述的装置，其中薄膜是溅射沉积薄膜。
6、按照权利要求4所述的装置，其中薄膜是电镀薄膜。
7、按照权利要求1所述的装置，其中基体是悬臂，其中加热器是悬臂上的尖端。
8、一种在磁性介质上记录的磁记录写入头，包括：
基体；
基体上的磁轭，所述磁轭包括第一和第二磁极，每个所述磁极具有极尖，极尖间隔一定距离从而形成写入间隙；
位于磁轭内，产生横越极尖的磁场的线圈层；
当向其施加电流时产生热量的电阻加热器，所述加热器包括基本由Cr和V组成的合金；和
与电阻加热器连接以便提供电流加热所述电阻加热器的电导线，电阻加热器的电阻高于所述导线的电阻。
9、按照权利要求8所述的磁头，其中合金的组成为CrxV100-x，x介于50～90原子百分比之间。
10、按照权利要求8所述的磁头，其中基体是空气支撑浮动块的后端。
11、按照权利要求8所述的磁头，其中电阻加热器位于写入间隙中。
12、按照权利要求8所述的磁头，其中电阻加热器形成线圈层的一部分，并且其中线圈层包括电导线。
13、按照权利要求8所述的磁头，其中电阻加热器位于极尖附近，从而来自加热器的热量导致极尖的突出。
14、按照权利要求8所述的磁头，其中来自电阻加热器的热量被引向磁性介质。
15、一种具有尖端的基于原子力显微术的悬臂，其中尖端基本由Cr和V组成的合金构成。
16、按照权利要求15所述的悬臂，其中合金的组成为CrxV100-x，x介于50～90原子百分比之间。
17、按照权利要求15所述的悬臂，还包括悬臂上与所述尖端连接以便电阻加热所述尖端的电导线。
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