CN1561576B - 具有能量恢复电路的栅极驱动器装置 - Google Patents

具有能量恢复电路的栅极驱动器装置 Download PDF

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CN1561576B
CN1561576B CN028193199A CN02819319A CN1561576B CN 1561576 B CN1561576 B CN 1561576B CN 028193199 A CN028193199 A CN 028193199A CN 02819319 A CN02819319 A CN 02819319A CN 1561576 B CN1561576 B CN 1561576B
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gate driver
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CN1561576A (zh
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F·李
J·钱
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Italian Ericsson Ltd i L
TDK Electronics AG
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0416—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/04163—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Abstract

本发明提供了一种新颖的栅极驱动器装置，其中能量恢复电路与方波栅极驱动器相结合。能量恢复电路包括第一回路，用于当栅极驱动器关断时将能量从栅极电容释放到电感，以及第二回路，用于将能量从电感释放到电源。因此，当栅极驱动器关断时，栅极电容的能量被转移至电源，且栅极驱动器装置仍然保持与方波驱动器相同的工作灵活性，并独立于开关频率。

Description

具有能量恢复电路的栅极驱动器装置
技术领域
本发明涉及用于功率MOSFET的栅极驱动器，更具体地涉及这样一种栅极驱动器装置，其中的能量恢复电路与方波栅极驱动器相结合，以便恢复在栅极驱动器中的关断损耗。
背景技术
目前，用于功率MOSFET的栅极驱动器可以分为三个主要类别，即，方波、准谐振和谐振驱动器。如图1所示的方波栅极驱动器通常在由相同的控制信号驱动的一对图腾柱(totem pole)N和P沟道开关组成的IC中实现。方波驱动器的优势在于：易于实现，并且不依赖于开关频率。然而，没有方法可以用于恢复由MOSFET栅极电容的充放电所产生的导通和关断能量损耗，而这些能量损耗对于高频工作是无法容忍的。
如图2所示的准谐振驱动器可以消除栅极驱动器中的导通损耗，如图3所示的谐振驱动器可以通过每个开关周期期间、在谐振电感Lg和有效栅极电容Cg之间循环能量来消除导通和关断损耗。然而，不同于可以工作在“脉宽调制(PWM)”模式以及“可变频率控制”模式下的方波驱动器，准谐振和谐振驱动器由于其依赖于开关频率和占空比，因此只能在“可变频率控制”模式下的变窄的频率范围内正常工作。因此，准谐振和谐振驱动器中电路的工作频率严格受到限制。
因此，存在对于这样的栅极驱动器的需要，一方面，这种栅极驱动器是不依赖于开关频率的，另一方面，它能够从MOSFET的栅极电容中恢复一些能量。
发明内容
本发明提供一种新颖的栅极驱动器装置，其中能量恢复电路与方波栅极驱动器结合。能量恢复电路能够在栅极驱动器的关断工作期间，通过将栅极电容中存储的能量转移至电源从而恢复关断损耗。具体地，能量恢复电路包括第一回路，用于当栅极驱动器关断时将能量从栅极电容释放到电感，以及第二回路，用于将能量从电感释放到电源。通过导通优选为FET的第一器件形成第一回路，通过利用优选为二极管的单向性器件形成第二回路。因此，当栅极驱动器关断时，栅极电容的能量被转移至电源，且栅极驱动器装置仍然保持与独立于开关频率的方波驱动器相同的工作灵活性。
附图说明
参考附图，在阅读现有技术电路的描述和本发明的优选实施例的基础上，本发明的上述和其他特征以及优点将变得更加清楚，其中：
图1示出了传统的方波栅极驱动器电路；
图2示出了准谐振栅极驱动器电路；
图3示出了谐振栅极驱动器电路；
图4示出了本发明的栅极驱动器装置的电路；以及
图5示出了图4中的栅极驱动器装置的时序图。
具体实施方式
如图4所示，根据本发明的新颖的栅极驱动器装置，能量恢复电路(如虚线框10中所述)与方波栅极驱动器电路相结合，以恢复栅极驱动器中的关断损耗。具体地，能量恢复电路包括电感L和单向性传导器件D，以及开关Q3。这里在本实施例中，Q3是FET而D是二极管。
如图4所示，电感L连接在FET Q3和二极管D的结合点与栅极电容Cg之间。在栅极驱动器的关断工作期间，当导通FET Q3和二极管D时，将会形成两个回路，用于在两个连续步骤中将能量栅极电容Cg恢复到电源Vc，这将在下面详细讨论。
为了导通主FET S，方波栅极驱动器电路中的FET Q1被导通，并将栅极电容Cg充电至Vc，以便上拉(pull up)S的栅极，正如图1所示的传统方波栅极驱动器中相同的方式。
然而，为了关断主FET S，本发明的栅极驱动器装置工作在不同于图1所示的传统方波栅极驱动器的方式中。具体地，在Q1关断之后，方波栅极驱动器电路的FET Q2并不立即导通而以相同于传统方波栅极驱动器中的方式将栅极钳位至地。取而代之的是，在Q1的关断和Q2的导通之间增加了滞后时间td，用于使能量恢复电路工作以便将关断栅极能量恢复回到电源Vc，其细节如图5中的时序图所示。
具体地，如图5所示，当在时间t0处关断Q1时，Q3导通。在Cg、L、Q3之间形成第一回路，该第一回路以谐振方式将能量从栅极电容Cg释放或转移至谐振电感L。Q3保持导通一段时期TonQ3直到t1。
通过电感L和栅极电容Cg的设计来固定Q3的导通时间，Q3的导通时间由下列方程给出：
Ton Q 3 = π 2 L · C g
总滞后时间td应当稍长于TonQ3，优选具有10-20％的余量。
在时刻t1，当Q3关断时，存储在谐振电感L中的能量通过二极管D和FET Q2的体二极管BD2返回至电源。因此，存储在栅极电容Cg中的能量被完全恢复。
在时刻t2，Q2在零电压下导通，S的栅极被钳位在地，以完成释放栅极电容Cg中的任何剩余能量。
如图5所示，栅极电压Vg的波形类似于方波，除了在下降沿期间其波形由能量恢复电路更改为正弦波形。
可以理解，滞后时间td不是电源级的开关频率和占空比的函数。因此，本发明的栅极驱动器装置可以容易地以恢复关断栅极能量的附加优势来取代任何的传统方波驱动。
上文具体描述了优选实施例。可以理解，不背离本发明的精神，各种变化和修改对于本领域技术人员来说都是显而易见的。因此，本发明的范围仅由附属权利要求所限定。

Claims (28)

1.一种栅极驱动器装置，用于驱动功率MOSFET，包括：
电源，用于提供控制驱动功率；
方波栅极驱动器电路，用于对耦合至功率MOSFET栅极的栅极电容充电，以便导通所述MOSFET；
能量恢复电路，用于在所述方波栅极驱动器电路的关断工作期间使所述栅极电容向所述电源放电，所述能量恢复电路包括：
a.具有第一端和第二端的谐振电感；
b.第一传导器件，连接在所述第二端与所述电源的第一侧之间；及
c.单向性传导器件，与所述第一传导器件串联连接，且连接至所述电源的第二侧；
其中，所述谐振电感的所述第一端连接至所述栅极电容。
2.权利要求1所述的栅极驱动器装置，其中与所述电感和所述栅极电容相连的第一传导器件形成一个回路，以便在所述关断工作期间将能量从所述栅极电容释放到所述电感。
3.权利要求2所述的栅极驱动器装置，其中所述第一传导器件是FET。
4.权利要求1-3任一所述的栅极驱动器装置，其中与所述电感和所述电源相连的单向性传导器件将能量从所述电感释放到所述电源。
5.权利要求4所述的栅极驱动器装置，其中所述单向性传导器件是二极管。
6.权利要求1-3之一所述的栅极驱动器装置，其中所述栅极驱动器电路包括第三传导器件，用于一个回路，所述电源通过该回路对所述栅极电容进行充电。
7.权利要求6所述的栅极驱动器装置，其中所述第三传导器件是FET。
8.权利要求1-3之一所述的栅极驱动器装置，其中所述栅极驱动器电路包括第四传导器件，用于形成一个回路，所述栅极电容能够通过该回路完全放电。
9.权利要求8所述的栅极驱动器装置，其中所述第四传导器件是FET。
10.一种在用于驱动功率MOSFET的方波栅极驱动器的关断操作中恢复能量的方法，包括：
提供能量恢复电路，用于在所述栅极驱动器的所述关断工作期间，使栅极电容向所述栅极驱动器的电源放电；
当所述栅极驱动器关断时，通过所述能量恢复电路将所述栅极电容放电，
其中所述放电包括步骤：在所述栅极驱动器关断之后，形成第一回路以便将能量从所述栅极电容释放到谐振电感；以及
其中所述放电进一步包括步骤：形成第二回路，以便将能量从所述电感释放到所述电源。
11.权利要求10的方法，其中所述第一回路包括彼此串联的所述栅极电容、所述电感和第一传导器件。
12.权利要求11的方法，其中所述形成所述第一回路的步骤是通过导通所述第一传导器件来实现的。
13.权利要求12的方法，其中所述放电进一步包括步骤：保持所述第一传导器件导通一段预定时间。
14.权利要求13的方法，其中所述时间期间为
Figure FSB00000966707500021
其中L
是所述谐振电感的电感值，Cg是所述栅极电容的电容值。
15.权利要求10的方法，其中所述第二回路包括彼此串联的所述电感、第二传导器件和所述电源。
16.权利要求15的方法，进一步包括步骤：形成第三回路，以便完全释放所述栅极电容中的剩余能量。
17.权利要求16的方法，其中形成所述第三回路的所述步骤是在所述第二导通器件关断一段滞后时间之后执行的。
18.一种栅极驱动器装置，用于对功率MOSFET充电和放电，包括：
电源，用于提供控制驱动功率；
方波栅极驱动器电路，包括：
第一导通器件，用于当所述方波栅极驱动器电路导通时，形成用于所述电源到栅极电容的回路；
第二导通器件，用于当所述方波栅极驱动器电路关断时，形成用于将能量从所述栅极电容释放到地的回路；
关断能量恢复电路，包括：
电感，用于存储从所述栅极电容中释放的能量；
第三导通器件，用于形成回路以将所述栅极电容的能量释放到所述电感；
第四导通器件，用于形成回路以将能量从所述电感释放到所述电源；
由此，当所述栅极驱动器装置关断时，通过所述恢复电路来恢复栅极电容中的能量。
19.权利要求18的栅极驱动器装置，其中所述第一导通器件是FET。
20.权利要求18或19的栅极驱动器装置，其中所述第二导通器件是FET。
21.权利要求18-19之一的栅极驱动器装置，其中所述第三导通器件是FET。
22.权利要求18-19之一的栅极驱动器装置，其中所述第四导通器件是二极管。
23.一种用于恢复方波栅极驱动器中的关断损耗的能量恢复电路，用于对功率MOSFET的栅极电容进行放电，包括：
第一回路，用于在所述栅极驱动器的关断工作期间，将能量从所述栅极电容释放到电感；和
第二回路，用于将能量从所述电感释放到所述栅极驱动器的电源。
24.权利要求23的能量恢复电路，其中所述第一回路包括与所述电感和所述栅极电容串联的第一传导器件。
25.权利要求24的能量恢复电路，其中当所述栅极驱动器关断时所述第一传导器件导通，以便形成所述第一回路从而开始从所述栅极电容到所述电感的放电。
26.权利要求24或25的能量恢复电路，其中所述第一导通器件是FET。
27.权利要求23-25之一的能量恢复电路，其中所述第二回路包括与所述电感和所述电源串联的第二传导器件。
28.权利要求27的能量恢复电路，其中所述第二导通器件是二极管。
CN028193199A 2001-10-01 2002-09-11 具有能量恢复电路的栅极驱动器装置 Expired - Lifetime CN1561576B (zh)

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