CN1567608A - 波长变换填料及含有这种填料的光学元件 - Google Patents

波长变换填料及含有这种填料的光学元件 Download PDF

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CN1567608A
CN1567608A CNA2004100367021A CN200410036702A CN1567608A CN 1567608 A CN1567608 A CN 1567608A CN A2004100367021 A CNA2004100367021 A CN A2004100367021A CN 200410036702 A CN200410036702 A CN 200410036702A CN 1567608 A CN1567608 A CN 1567608A
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light
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K·霍恩
A·德布雷
P·施洛特尔
R·施米特
J·施奈登
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Abstract

一种掺有发光材料的波长变换填料(5)，它被应用于具有一个发紫外光、蓝光或绿光的LED芯片(1)的电致发光元件中，其特征在于：所述的发光材料包含有无机发光色料粉末(6)，该无机发光色料由一个组构成，该组包含粒度≤20μm且d50－值≤5μm的用稀土掺杂的石榴石、用稀土掺杂的硫镓酸盐、用稀土掺杂的铝酸盐和/及用稀土掺杂的原硅酸盐。本发明还涉及含有上述波长变换填料的发光光学元件。

Description

波长变换填料及含有这种填料的光学元件
本申请是申请号为97191656.X、申请日为1997.9.221、发明名称为“波长变换填料、它的应用及其制造方法”的分案申请。
技术领域
本发明涉及一种掺有发光材料的波长变换填料，它被应用于具有一个发紫外光、蓝光或绿光的LED芯片的电致发光元件中。本发明还涉及含有这种填料的光学元件。
背景技术
这样一种元件例如已由公开文献DE 3804 293公知。其中描述了一种具有电致发光二极管或激光二极管，它们借助一种由塑料组成的掺有荧光光波变换有机色料的部件使由二极管发出的发射光谱移到较长的波长上。由该装置发出的光由此具有不同于发光二极管发光的颜色。根据添加到塑料中的色料类型，可以生产出具有同一种发光二极管类型的发光二极管装置，它们可发出不同颜色的光。
在发光二极管的许多可能的应用领域，如在机动车仪表盘中的显示元件、飞机及汽车中的照明及全色柔光LED显示器方面，对发光二极管装置提出了强烈的要求，希望能由它们产生出混色光，尤其是白光。
但是，至今公知的开始部分所述类型的具有有机发光材料的填料在温度及温度-湿度应力下表现出色点的偏移，即由电致发光元件发出光的颜色的偏移。
在JP-07 176 794-A中描述了一种发白光的平面光源，其中在一透明板的前侧设置了两个发蓝光的二极管，其光线穿过透明板发出。透明板在其两个彼此对置的主平面之一上涂有荧光物质，当它受二极管的蓝光激发时发出光束，由荧光物质发出的光具有不同于二极管发出的蓝光的波长。在该公知的元件中特别困难的是，用一种方式及方法来施加荧光物质，以使得该光源能发出均匀的白色。此外，大规模生产的生产能力有问题，因为荧光层的很小层厚波动、例如是由于透明板表面不平整度引起的，将导致发出光的白色调的变化。
发明内容
本发明的任务在于，开发一种开始部分所述类型的填料，借助它可制造出能发出均匀混合色光的电致发光元件，并可实现以技术上有代表性的成本及普遍可再现的元件特性进行大规模生产。它所发出的光在温度及温度-湿度应力下应能保持色稳定。此外还将给出制造这种填料的方法。
该任务将通过具有如下特征的填料来解决，即：
一种掺有发光材料的波长变换填料，它被应用于具有一个发紫外光、蓝光或绿光的LED芯片的电致发光元件中，其特征在于：所述的发光材料包含有无机发光色料粉末，该无机发光色料由一个组构成，该组包含粒度≤20μm且d50-值≤5μm的用稀土掺杂的石榴石、和/或用稀土掺杂的硫镓酸盐、和/或用稀土掺杂的铝酸盐、和/或用稀土掺杂的原硅酸盐。
优选地，所述的无机发光色料粉末包含有由通式为A3B5X12:M的磷光体族构成的发光色料，其中A代表Y、Gd和/或Lu，B代表Al和/或Ga，X代表O，M代表Ce3+、Tb3+、Eu3+、Cr3+、Nd3+或Er3+，而且所述发光色料的粒度≤20μm且d50-值≤5μm。
在进一步的改进方案中，采用CaGa2S4:Ce3+、SrGa2S4:Ce3+、MAlO3:Ce3+、MAlO3:Ce3+、和/或M2SiO5:Ce3+作为发光色料粉末，其中M代表Y、Sc、La。
有利地，所述发光色料是球形的或鳞片状的。
优选地，所述发光色料的d50-值在1到2μm之间。
有益的是，使用出自于用Ce掺杂的石榴石组中的颗粒作为发光色料。可以使用YAG:Ce颗粒作为发光色料。
根据本发明的发光光学元件，它具有所述的波长变换填料，以及具有半导体主体，该半导体主体在所述光学元件工作时发出电磁辐射，其特征在于：所述半导体主体具有一个半导体层序列，该层序列适合于在所述半导体元件工作时从紫外光、蓝光或绿光频谱区域中发出电磁辐射；所述发光色料把来自于所述频谱区域中的辐射变换成具有更大波长的辐射，使得该半导体元件发出混合的辐射、尤其是混合色的光，该混合的辐射或光由所述具有更大波长的辐射和所述紫外光、蓝光或绿光频谱区域中的辐射组成。
优选地，所述的填料至少包封了所述半导体主体的一部分。
根据上述发光光学元件的一种改进方案，由所述半导体主体发出的辐射在420-460nm的波长时具有发光强度最大值。
有利的是，所述半导体主体被布置在不透光的基壳的槽中，而且所述的槽至少部分地被填充了所述的填料。
优选地，在所述的发光材料中包含有不同类型的发光颗粒类型，这些颗粒类型在不同的波长时发光。
作为触变剂，例如可使用高温蒸馏的硅酸。该触变剂用于浓缩环氧填充树脂，以减小发光色料颗粒的沉积。对于填充树脂的处理，将继续调整其流动性及浸润特性。
作为矿物扩散剂，为了优化元件的发光图象，最好使用CaF2。
作为处理助剂，如乙二醇醚(Glykolether)能适用。它能改善环氧填充树脂及发光色料颗粒的相容性并由此稳定发光色料颗粒-环氧填充树脂扩散体。为此目的也可使用基于硅的外表面改型。
疏水剂、如流体硅蜡同样用于修改色料表面，尤其是改善无机色料表面与有机树脂的相容性及浸润性。
随着媒介质、如烷氧基硅氧烷(Alkoxysiloxan)在填料固化状态下改善色料及环氧树脂之间的附着。由此可达到，例如在温度波动时，环氧树脂及色料之间的界面不会被撕裂。在环氧树脂及色料之间的间隙将会导致元件中的光损耗。
环氧填充树脂最好包含一种反应环氧乙烷三环，该树脂最好具有：单功能和/或多功能的环氧填充树脂体系(≥80Gew％，例如Bisphenol-A-Diglycidylether)，一种稀释剂(≤10Gew％，例如aromatischer Monoglycidylether)，一种多功能乙醇(≤5Gew％)，一种硅基除气剂(≤1Gew％)，及一种去色剂，用于调整色值(≤1Gew％)。
在该填料的一种特别有利的进一步构型中，发光色料为球状或鳞片状。有利的是这种色料聚成块的倾向非常小。H2O的含量低于2％。
在制造及加工具有无机发光色料颗粒的环氧填充树脂成分时通常除浸润的问题外还有沉积问题。尤其是d50≤5μm的发光色料颗粒极其倾向于结块。在上述的填料的组成成分的情况下，发光色料能有利地以上面给出的粒度基本上不结块并均匀地散布在环氧填充树脂中。这种散布即使在填料较长期的存放的情况下也是稳定的。实际上不会出现浸润和/或沉积的问题。
特别有利的是使用出自于用Ce掺杂的石榴石(Granate)组中的颗粒作为发光材料、尤其是使用YAG:Ce颗粒作为发光材料。有利的掺杂材料浓度例如为1％，及有利的发光材料浓度例如为12％。此外，优选的高纯度发光色料颗粒最好具有的铁含量≤5ppm。较高的铁含量将引起元件中较大的光损耗。发光色料颗粒有很强的研磨性。因此，填料的Fe含量在制造时会显著地增加。最好在填料中的铁含量＜20ppm。
无机发光材料YAG:Ce首先具有特殊的优点，即在此情况下它涉及具有计算指数约为1,84的不分离色料。由此除了波长转换的散布性能外还有散射效能，这可导致蓝色二极管光与黄色转换光的良好混合。
此外特别有利的是，在使用无机发光色料时环氧树脂中的发光材料浓度不会象使用有机色料时那样受到溶解度的限制。
为了进一步避免结块，发光色料最好设有一个硅涂层。
在一种制造根据本发明的填料的优选方法中，发光色料颗粒在与环氧填充树脂混合前在≥200℃的温度下进行例如约10小时的热处理。由此同样可减小其结块的倾向。
换一种方式或附加地，发光色料颗粒在与环氧填充树脂混合前在一种高沸点的乙醇中淘洗并且然后被干燥。另一种减少结块的可能性在于，发光色料颗粒在与环氧填充树脂混合前被添加一种疏水的硅蜡。特别有利的是，磷的表面稳定性通过在存在乙二醇醚(Glykolethern)的情况下通过加热色料、例如在T＞60℃时加热16小时来实现。
为了避免由于研磨引起的发光色料散布时的干扰杂质，反应容器、搅拌及扩散装置和轧制机内玻璃、金刚砂、碳化物及氮化物材料及特珠硬化的钢材。不结块的发光材料的散布可以用超声波法或通过使用筛及玻璃陶瓷烧结来得到。
一种用于制造发白光的光电元件的特别有利的无机发光材料是磷光体YAG:Ce(Y3Al5O12:Ce3+)。它能以特别简单的方式与在传统的LED技术中应用的透明环氧填充树脂相混合。此外可考虑作为发光材料的是另外用稀土元素掺杂石榴石，如：Y3Ga5O12:Ce3+，Y(Al，Ga)5O12:Ce3+及Y(Al，Ga)5O12Tb3+。此外，用稀土元素掺杂的硫镓酸盐(Thiogallate)，如CaGa2S4:Ce3+及SrGa2S4:Ce3+特别适用于产生混合色光。对此同样可以考虑使用：用稀土元素掺杂的铝酸盐，如YalO3:Ce3+，YGaO3:Ce3+，Y(Al，Ga)O3:Ce3+及用稀土元素掺杂的原硅酸盐M2SiO5:Ce3+(M：Sc、Y、Sc)如Y2SiO5:Ce3+，对于镱的化合物原则上可用钪或镧来代替镱。
根据本发明的填料最好应用于光发射半导体主体，尤其是具有由GaxIn1-xN或GaxAl1-xN组成的有源半导体层或层列的半导体主体，它在工作时发射在紫外光、蓝光和/或绿光光谱范围中的光波。在填料中的发光色料颗粒将出自该光谱区域中的一部分光转换成具有较长波长的克，以使得该半导体元件发射混合光，尤其是由此种转换光与出自于紫外、蓝和/或绿光光谱中的光组成的混合色光。这就是譬如，发光发光色料颗粒选择地吸收了由半导体主体发出的光谱的一部分并在较长波长区域中再发射出来。最好由半导体主体发出的光在波长λ≤520nm时具有相对强度最大值，及由发光发光色料颗粒选择性吸收光谱的波长区域位于该强度最大值以外。
同样，也可有利地用多种不同类型的发射不同波长的发光发光色料颗粒散布在填料中。这最好是通过在不同的施主晶格中的不同掺杂来达到。由此便可有利地实现：产生出多种多样的由半导体元件发出光的混合色及色温。特别感兴趣的是它用于全色柔光LED。
在根据本发明的填料的一个有利应用方面，发光半导体主体(例如一个LED芯片)至少部分地被填料包围。该填料在这里最好同时作为元件封装件(外壳)来使用。根据该实施形式的半导体元件的优点实质上在于：对于它的制造可以使用制造传统发光二极管(例如辐射型发光二极管)所使用的传统生产线。对于元件的封装只需使用填料来简单地替代在传统发光二极管中为此所使用的透明塑料。
使用根据本发明的填料可以通过简单的方式可以制造单色光源、尤其是具有发射单一蓝光的半导体主体的发光二极管，发射混合光、尤其是白光的光源。为了使用譬如发蓝光的半导体主体来产生白光，将借助于无机发光色料颗粒使由半导体主体发出光的一部分由蓝色光谱区域转换到作为蓝色的补色的黄色光谱区域。
在此情况下，通过对发光材料、其颗粒粒度及其浓度的合适选择使白光的色温或色点变化。此外也可以使用发光材料混合物，由此能有利地、非常精确地调节发出光线的所需色调。
尤其有利地是该填料应用于一种发光半导体主体，由它发出的光谱在420nm及460nm的波长上，尤其在430nm(例如基于GaxAl1-xN的半导体主体)或450nm(例如基于GaxIn1-xN的半导体主体)时具有强度的最大值。利用这种半导体元件能有利地产生出C.I.E.色板中所有的颜色及混合色。但是也可以用另外的电致发光材料、例如聚合物材料来取代由电致发光半导体材料作的发光半导体主体。
该填料特别适合于一种发光半导体元件(例如发光二极管)，其中发光半导体主体被放置在一个外壳的槽中，该外壳可以与一个引线框预制在一起，及该槽中将注有填料。这样一种半导体元件可以用传统的生产线大批量地制造。对此仅需在将半导体主体安装到外壳中后用填料充填槽。
可以使用根据本发明的填料这样有利地制造发白光的半导体元件，即，选择发光材料，以使得由半导体主体发出的蓝光转换成互补的波长区域、尤其是蓝光及黄光，或加色三色组如蓝、绿及红。这样产生的白光的色调(CIE色板中的色点)可以通过鉴于混合物及浓度的发光材料的选择来改变。
为了使由电致发光半导体主体发出的光与由发光材料转换的光均匀混合并由此改善由元件发出的光的色均匀度，在根据本发明的填料的一个有利构型中附加了一种发蓝光的色料，它将削弱由半导体主体发出的光线的所谓方向特性。对于方向特性理解为，由半导体主体发出的光具有一个优先的发光方向。
根据本发明的具有发蓝光的电致发光半导体主体的发白光的半导体元件可以这样特别有利地实现：在作为填料使用的环氧树脂中混合无机的发光材料YAG:Ce(Y3Al5O12:Ce3+)。由该半导体主体发出的蓝光的一部分将被无机发光材料Y3Al5O12:Ce3+转换到黄光光谱区域，由此移动到为蓝色补色的波长区域。在此情况下可通过色料浓度的合适选择来改变白光的色调(CIE色板中的色点)。
对填料可添加附加的发光颗粒，即所谓扩散剂。由此能使半导体元件的色效果及发光性能有利地进一步优化。
利用根据本发明填料也可有利地使由电致发光半导体主体发出的除可见光以外的紫外光转换成可见光。由此使该半导体主体发出光的亮度明显地增强。
根据本发明的发白光的半导体元件，尤其是其中使用了YAG:Ce光转换色料的半导体元件的特殊优点在于：这种发光材料在蓝光激励下，在吸收和发射光谱之间起到移动100nm的光谱移动作用。这导致对由发光材料发射出的光的再吸收实质性地减小并由此导致增强的光输出量。此外，YAG:Ce有利地具有高的热稳定性及光化学(例如UV-)稳定性(实质地高于有机发光材料)，由此可制造用于室外和/或高温区域的发白光的二极管。
YAG:Ce鉴于其再吸收性、光输出量、热及光化学的稳定性及可加工性，至今被看作最适合的发光材料。但也可考虑使用另外Ce掺杂的磷光体、尤其是Ce掺杂的石榴石类。
原光的波长转换将通过施主晶格中有源过渡金属中心的晶体场分离来确定。通过用Gd和/或Lu代替Y3Al5O12施主晶格中的Y及用Ga代替Al，可使发射波长以不同的方式移动，此外也可通过掺杂类型来移动。通过用Eu3+和/或Cr3+代替Ce3+中心可以产生相应的波长移动。用Nd3+及Er3+的相应掺杂由于较大的离子半径及由此较小的晶体场分离，甚至可以实现发射IR(红外线)的元件。
附图说明
由以下结合附图1至8对两个实施例的描述将会得出本发明的其它特征、优点及目的。
附图为：
图1是具有根据本发明的填料的第一半导体元件的概要剖面图；
图2是具有根据本发明的填料的第二半导体元件的概要剖面图；
图3是具有根据本发明的填料的第三半导体元件的概要剖面图；
图4是具有根据本发明的填料的第四半导体元件的概要剖面图；
图5是具有根据本发明的填料的第五半导体元件的概要剖面图；
图6是一个具有基于GaN层列的发蓝光的半导体主体的发射光谱的概图；
图7是具有根据本发明的填料的、发白光的两个半导体元件的发射光谱的概图；及
图8是由另外发白光的半导体元件发射的光谱的概图。
在不同的附图中相同的或相同功能的部分均以相同的标号表示。
具体实施方式
在图1的发光半导体元件中，半导体主体1借助导电连接部分、例如金属焊剂或粘剂用其背面触点11固定在第一电端子2上。其正面触点12借助一根连接导线14与第二电端子3相连接。
半导体主体1的自由上表面及电端子2和3的部分区域直接地被固化的波长转换填料5封装。它最好具有：环氧填充树脂80-90％Gew％(重量百分比)，发光色料(YAG:Ce)≤15Gew％，二乙烯乙二醇-甲醚(Diethylenglycolmono methylether)≤2Gew％，Tegopreg6875-45≤2Gew％，Aerosil 200≤5Gew％。
在图2中表示的根据本发明半导体元件的实施例5与图1中实施例的区别在于：半导体主体1及电端子2和3的部分区域不是被波长转换填料而是被一透明的封块15封装。该透明封块15对由半导体主体1发出的光束不起波长改变作用，它例如由发光二极管技术中传统使用的环氧树脂、硅树脂或丙烯酸盐树脂、或由另外合适的透明材料如无机玻璃组成。
在该透明封块15上加上一个层4，它由一种波长转换填料作成，并如图2中所示，它覆盖着封块15的整个外表面。同样可考虑，层4仅覆盖该外表面的部分区域。层4例如由一种掺有发光发光色料颗粒6的透明环氧树脂组成。这里对于发白光半导体元件适用的发光材料最好是YAG:Ce。
在图3中表示的具有根据本发明填料的、特别优选的元件中，第一及第二电端子2、3被埋放在带有槽的透明亦或预制好的基壳8中。“预制好”应理解为，在半导体主体装在端子2上以前，基壳8就已经例如借助注塑构成在端子2、3上。基壳8例如由一种透明的塑料组成，及槽就其形状言构成半导体工作时发射光束的反射器(必要时在槽内壁上采用合适的涂层)。这样的基壳8特别适用于可在印刷电路板上安装的发光二极管。它在装半导体主体前例如借助注塑被形成在带有电端子2、3的导体带(引线框架)上。
槽中充填填料5，它们组成成分相应于以上结合图1所描述的材料。
图4中表示一种所谓辐射二极管。其中电发光半导体主体1借助焊接或粘接被固定在构成反射器的第一电端子2的部分上。这种外壳的形状是发光二极管技术中公知的，故无需赘述。
半导体主体1的自由上表面直接地由带有发光发光色料颗粒6的填料5覆盖，后者又被另一透明封块10包围。
因完整起见，这里应注意到，在图4的结构形式中，当然可类似图1所示的元件利用带有发光发光色料颗粒6的固化填料5组成的单一封块。
在图5的实施例中直接地将一个层4(可以用与上述相同的材料)包围在半导体主体1上。这部分以及电端子2、3的部分区域将由另一透明封块10封装，后者对透过层4的光束不起任何波长改变作用，并例如由在发光二极管技术中所使用的透明环氧树脂或玻璃来制作。
这种设有层4的半导体主体1在无封块的情况下，也当然可以有利地使用由发光二极管技术中全部公知的外壳结构形成(例如，SMD外壳、辐射状外壳(请参见图4))。
在上述所有元件中，为了优化发光的彩色效果及为了发光性能的适配，填料5、需要时，透明封块15和/或需要时，另外的透明封块10具有散射光的颗粒，最好是所谓的扩散剂。这种扩散剂例如为矿物填充材料，尤其是CaF2、TiO2、SiO2、CaCO3或BaSO4或是有机染料。这些材料可用简单方式掺和在环氧树脂中。
在图6、7及8中表示一个发蓝光的半导体主体的发射光谱(图6)(在λ～430nm时为最大发光强度)及借助这样的半导体主体制造的发白光的半导体元件的发射光谱(图7及8)。在其横座标上各表示单位为nm的波长，及在纵坐标上各表示相对电致发光(EL)强度。
由图6中所示的半导体主体发出的光线仅有一部分被转换到长波的波长区域，由此形成作为混合色的白光。图7中的虚线表示一个半导体元件的发射光谱，其光线由两个互补的波长区域(蓝及黄)组成并由此发出总的白光。这里发射光谱在约400及约430nm(蓝光)之间的波长及在约550及约580nm(黄光)之间的波长上各具有一个最大值，实线31代表一个半导体元件的发射光谱，其颜色白色是由三个波长区域(由蓝、绿及红组成的三色混合组)混合组成。这里其发射光谱例如在约430nm(蓝)、约500nm(绿)及约615nm的波长时各具有一个最大值。
图8表示一个发白光的半导体元件的发射光谱，该半导体元件设有一个发出图6所示发射光谱的半导体主体，并在其中使用了发光材料YAG:Ce。在由该半导体主体发出的图6所示的光线中仅有一部分转换成长波波长区域，由此形成混合色白光。图8中不同类型的虚线30至33表示根据本发明的半导体元件的发射光谱，在其中填料5的环氧树脂具有不同的YAG:Ce浓度。每个发射光谱在λ＝420nm及λ＝430nm之间、即蓝色光谱区域中，和在λ＝520nm及λ＝545nm之间、即绿色光谱区域中各具有一个强度最大值，其中具有长波最大值的发射频带大部分位于黄色频谱区域中，图8中所示附图表明，在根据本发明的半导体元件中可以用简单方式通过改变环氧树脂中发光材料浓度来改变白光的CIE色点。
借助上述元件对本发明的说明当然不能看作是对本发明的限制。作为半导体主体，例如发光二极管芯片或激光二极管芯片也可理解为聚合物LED，它发射相应的光线频谱。

Claims (12)

1.一种掺有发光材料的波长变换填料(5)，它被应用于具有一个发紫外光、蓝光或绿光的LED芯片(1)的电致发光元件中，其特征在于：所述的发光材料包含有无机发光色料粉末(6)，该无机发光色料由一个组构成，该组包含粒度≤20μm且d50-值≤5μm的用稀土掺杂的石榴石、和/或用稀土掺杂的硫镓酸盐、和/或用稀土掺杂的铝酸盐和/或用稀土掺杂的原硅酸盐。
2.根据权利要求1的填料，其特征在于：所述的无机发光色料粉末包含有由通式为A3B5X12:M的磷光体族构成的发光色料，其中A代表Y、Gd和/或Lu，B代表Al和/或Ga，X代表O，M代表Ce3+、Tb3+、Eu3+、Cr3+、Nd3+或Er3+，
而且所述发光色料的粒度≤20μm且d50-值≤5μm。
3.根据权利要求2的填料，其特征在于：采用CaGa2S4:Ce3+、SrGa2S4:Ce3+、MAlO3:Ce3+、MAlO3:Ce3+、和/或M2SiO5:Ce3+作为发光色料粉末(6)，其中M代表Y、Sc、La。
4.根据权利要求1-3中任一项的填料，其特征在于：所述发光色料(6)是球形的或鳞片状的。
5.根据权利要求1-4中任一项的填料，其特征在于：所述发光色料(6)的d50-值在1到2μm之间。
6.根据权利要求1至5中任一项的填料，其特征在于：使用出自于用Ce掺杂的石榴石组中的颗粒作为发光色料。
7.根据权利要求6的填料，其特征在于：使用YAG:Ce颗粒作为发光色料。
8.一种发光光学元件，具有如权利要求1-7之一所述的波长变换填料，以及具有半导体主体(1)，该半导体主体在所述光学元件工作时发出电磁辐射，其特征在于：
所述半导体主体(1)具有一个半导体层序列(7)，该层序列适合于在所述半导体元件工作时从紫外光、蓝光和/或绿光频谱区域中发出电磁辐射，
所述发光色料把来自于所述频谱区域中的辐射变换成具有更大波长的辐射，使得该半导体元件发出混合的辐射、尤其是混合色的光，该混合的辐射或光由所述具有更大波长的辐射和所述紫外光、蓝光和/或绿光频谱区域中的辐射组成。
9.根据权利要求8的发光光学元件，其特征在于：所述的填料至少包封了所述半导体主体(1)的一部分。
10.根据权利要求8或9的发光光学元件，其特征在于：由所述半导体主体(1)发出的辐射在420-460nm的波长时具有发光强度最大值。
11.根据权利要求8-10中任一项的发光光学元件，其特征在于：所述半导体主体(1)被布置在不透光的基壳(8)的槽(9)中，而且所述的槽至少部分地被填充了所述的填料(5)。
12.根据权利要求8-11中任一项的发光半导体元件，其特征在于：在所述的发光材料中包含有不同类型的发光颗粒类型，这些颗粒类型在不同的波长时发光。
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CN110857389B (zh) * 2018-08-23 2022-08-19 有研稀土新材料股份有限公司 一种近红外荧光粉以及含该荧光粉的发光装置

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