CN1572382A - 超声波发生器装置 - Google Patents

超声波发生器装置 Download PDF

Info

Publication number
CN1572382A
CN1572382A CNA2004100460552A CN200410046055A CN1572382A CN 1572382 A CN1572382 A CN 1572382A CN A2004100460552 A CNA2004100460552 A CN A2004100460552A CN 200410046055 A CN200410046055 A CN 200410046055A CN 1572382 A CN1572382 A CN 1572382A
Authority
CN
China
Prior art keywords
generator
joining tool
piezoelectric element
ultrasonic wave
generating apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2004100460552A
Other languages
English (en)
Other versions
CN100457295C (zh
Inventor
李庆良
洪建益
吴铭伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ADVANCED AUTOMATIC APPARATUS AND MATERIAL Co Ltd
ASM Assembly Automation Ltd
Original Assignee
ADVANCED AUTOMATIC APPARATUS AND MATERIAL Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ADVANCED AUTOMATIC APPARATUS AND MATERIAL Co Ltd filed Critical ADVANCED AUTOMATIC APPARATUS AND MATERIAL Co Ltd
Publication of CN1572382A publication Critical patent/CN1572382A/zh
Application granted granted Critical
Publication of CN100457295C publication Critical patent/CN100457295C/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B06GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06BMETHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B3/00Methods or apparatus specially adapted for transmitting mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • B23K20/106Features related to sonotrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Abstract

本发明提供了一种用于接合装置的超声波发生器装置,其包含有:接合工具,其安装于放大角体上,该放大角体固定在第一和第二超声波发生设备之间。本发明还提供了一种用于接合装置的形成发生器的方法,其包含有下述步骤:提供一放大角体;将第一和第二超声波发生设备固定于该放大角体上,以便于该放大角体设置于所述的第一和第二超声波发生设备之间;以及将接合工具安装于该放大角体上。

Description

超声波发生器装置
技术领域
本发明涉及超声波发生器(ultrasonic transducers),尤其是涉及在半导体封装设备中用于接合形成(bond formation)(例如:精细引线和金属节点的焊接)的超声波发生器。
背景技术
在半导体封装工艺中,导电引线连接通常构造于不同的电子部件(electronic components)之间,如在半导体芯片和引线框衬底之间。一种方法是使用超声波焊接设备,例如超声波发生器。通过使用以超声波频率产生振动的发生器,超声波焊接操作得以完成。由该超声波发生器产生的超声波能量通过接合工具(bonding tool)传送到待接合材料上(如:热音波倒装芯片(thermosonic flip chip)接合中的用于引线接合的金线或铝线,和具有金凸块(gold bumps)的芯片),该接合工具通常为楔体(wedge)、毛细管体(capillary)或者夹体(collet)。因此,超声波发生器可使用超声波能量将一段接合引线连接到电子部件的接触表面或者焊盘上。
图1是现有技术中传统的超声波发生器100的侧视图,其包含有大量的压电元件(piezoelectric elements),如堆积布置的压电陶瓷环(piezoelectric ceramic rings)102,其用于当该压电陶瓷环102通电时产生超声波振动。该陶瓷环102形成有中央空洞,并通过后端块体(back masses)104压缩固定在一起。该陶瓷环102和控制电路系统连接,并接收引起陶瓷元件产生超声波振动的输入信号。该超声波振动通过一延伸的放大角体(elongate amplifying horn)108放大,其自由端设置有接合工具,该接合工具在此为毛细管体110的形式。该毛细管体110用来提供压缩接合力于待焊接在一起的接合部件上。在该陶瓷环102和放大角体108之间设置有管体(barrel)106,以使该发生器100能被安装于引线接合装置。该发生器100沿着其轴线振动,其振动幅度在图1中由线条112表示。最大的位移幅度位于该放大角体108的自由端,该毛细管体设置于此。
这种传统的发生器存在的问题是:当接合工具施力于待焊接的接合部件时,在接合过程中的接合力由于反作用力使得该发生器弯曲或者变形。这种弯曲或者变形可能导致差共面性(poor coplanarity),转而导致施加于不同的待接合位置上的接合力分布不均匀。
在具体的范例如热音波倒装芯片接合过程中,半导体芯片上的大量金凸块完成焊接。其接合力可能达到约10kg。这种巨大的接合力使发生器发生形变,而在接合工具的末端导致差共面性。这种差共面性导致金凸块中接合力的不均匀分布。因此在各接合凸块(bondingstrength)中可能产生明显的接合力度的差异。
发明内容
因此,本发明的目的在于提供一种改进的发生器,以避免现有技术中的超声波发生器的前述缺点。
本发明一方面提供了一种用于接合装置的发生器,其包含有:接合工具,其安装于放大角体上,该放大角体固定在第一和第二超声波发生设备之间。
本发明另一方面提供了一种用于接合装置的形成发生器的方法,其包含有下述步骤:提供一放大角体;将第一和第二超声波发生设备固定于该放大角体上,以便于该放大角体设置于所述的第一和第二超声波发生设备之间;以及将接合工具安装于该放大角体上。
参阅后附的描述本发明实施例的附图,随后来详细描述本发明是很方便的。附图和相关的描述不能理解成是对本发明的限制,本发明的特点限定在权利要求书中。
附图说明
根据本发明所述的超声波发生器的较佳实施例之一现将参考附图加以描述,其中:
图1所示为现有技术中传统的超声波发生器的侧视图;
图2所示为根据本发明较佳实施例所述的超声波发生器的分解图;
图3(a)和3(b)所示为传统的超声波发生器和根据本发明较佳实施例所述的超声波发生器相比较时,表征其轴向振动曲线(profiles)的对比图;
图4所示所述发生器的侧视示意图,其显示了使用中压电元件的极化方向(poling directions);
图5(a)和5(b)所示为传统的发生器和所述的发生器分别施加接合力时形变的侧视示意图;
图6所示为所述的发生器在选定的频率范围内的阻抗和相位(impedance and phase)特性的示意图;
图7所示为所述的发生器和传统的发生器相比较时,其接合端处的振动位移-功率输出(power output)特性的示意图。
具体实施方式
图2所示为根据本发明较佳实施例所述的超声波发生器10的分解图。超声波能量由第一和第二超声波发生设备(ultrasonic-generatingmeans)提供,其可以为两组压电元件的形式,通常由堆积的、均匀分布在一放大角体22两侧的陶瓷环(ceramic rings)18制成。该放大角体更适宜地为双圆锥形状(bi-conical)。在本实施例中,每个压电组(piezoelectric stack)包含有四个陶瓷环18。该双圆锥形状的放大角体22具有向其中心逐渐变细的几何形状,这使得中心的振动幅度最大。发生器10可通过使用安装设备12的方式安装于接合装置如引线接合机上,该安装设备具有双凸缘(double flanges)14和安装撑体(mounting support)16,该安装撑体和每个凸缘14相连。
该陶瓷环18和安装撑体16通过后端块体(back masses)20固定于该双圆锥形状的放大角体22上,该后端块体由固紧设备(fasteningdevices),如紧固螺栓(tightening bolts)28安全固定于该双圆锥形状的放大角体22上。安装撑体16设置于(located)该发生器10的振动节点(vibration nodal points)处。接合工具,例如为毛细管体24的形式,更合适地基本(substantially)安装在该双圆锥形状的放大角体22的中央,该发生器10在此处的振动幅度最大。值得注意的是,该发生器10沿着其轴线30振动。
即使在巨大的压缩接合力作用下,在两个安装撑体16的中部设置的接合工具或者毛细管体24保证了良好的接合共面性,下面将会进行阐述。而且,由于接合工具设置在整个发生器10的中央,如当前设计所述,当通过接合工具纵轴(longitudinal axis)的轴线和旋转轴线相对齐时,使得惯性旋转力矩(rotary moment of inertia)降至最低。
图3(a)和3(b)所示为传统的超声波发生器100和根据本发明较佳实施例所述的超声波发生器10相比较时,表征其轴向振动曲线(profiles)的对比图,两个发生器均工作在全波长(full wavelength)的方式。在该图中,字母“R”表示发生器100,10围绕旋转轴26旋转的能力,该旋转轴26更适宜地通过毛细管体110,24的中心或者其纵轴。关于接合位置调整毛细管体110,24,旋转是必要的。Ux代表振动幅度。在图3(a)中,传统发生器100的毛细管体110以最大的幅度振动,其振动波长距离该发生器100的另一端为λ。另一方面,在图3(b)中,根据本发明较佳实施例所述的发生器10的毛细管体24以最大的幅度Amax振动,其振动波长距离该发生器10的任一端为λ/2。
图4所示为所述发生器10的侧视示意图,其显示了使用中压电元件或陶瓷环18的极化方向32。该图表述了电流源34传送电流和电磁场至所有的陶瓷环18。压电材料具有极化方向。当我们沿极化方向向压电元件提供电磁场时,该位于电磁场中的压电元件按照泊松比(Poisson’s ratio)在水平方向舒张,而在垂直方向收缩。当我们沿相反的方向提供电磁场时,该位于电磁场中的压电元件在水平方向收缩,而在垂直方向舒张。
通过排列该两组陶瓷环18a,18b的极化配置或者方向,以使其具有相反的极化方向32,该陶瓷环18是同步的,因此一组陶瓷环18a收缩(拉)而另一组陶瓷环18b扩张(推)。也就是说,在单个电流源34的作用下,一组陶瓷环18a收缩而另一组陶瓷环18b扩张。如图3所示,整个发生器10沿着轴向振动曲线(axial vibration profile)以超声波频率振动。由于该放大角体22的双圆锥形状,该逐渐变细的几何形状放大了中心的振动幅度。
图5(a)和5(b)所示为传统的发生器100和所述的发生器10分别施加接合力时形变的侧视示意图。在传统的发生器100的情形下(图5(a)),当其提供接合力时,其毛细管体110的轴线将偏离(shift away)垂直线,而导致在实际的接合轴线和垂直线之间存在偏差。这种偏差将会在接合力应用中导致不准确。
在本实施例所述的发生器10的情形下,由于其毛细管体24通过该双圆锥形状的放大角体22被相等地支撑在两侧,因此该毛细管体24的轴线和垂直线基本保持对齐。这时即使该双圆锥形状的放大角体22由于施加接合力而产生一些形变。接合力的操作因此更加精确和可重复。
图6所示为所述的发生器10的一些电气特性,即其在选定的频率范围内的阻抗和相位特性。共振频率(resonance frequency)达到了约62kHz。
图7所示为所述的发生器10和传统的发生器100相比较时,其接合端处的振动位移-功率输出特性的示意图。所述发生器10的曲线图用方块表示,而传统的发生器100的曲线图用圆圈表示。由图7可以看出,和传统的发生器100相比,所述的发生器10的振动位移随着该发生器10的功率输出水平显著增长。这种增长的一个理由是:相对于传统的发生器的一组压电元件块,其使用了两组压电元件块18a,18b。
值得注意的是,本发明较佳实施例在接合共面性无关于接合力方面是有益的。为了确保接合工具的良好定位,用于固定接合工具的孔洞可以在整个装置装配之后钻成。这种装配方法可以确保和安装撑体16一起的接合工具24的良好垂直性,并且使得该发生器的定位过程简单化。
在旋转性接合头的机构中,旋转轴26更适宜地是和接合工具24的轴线对齐(align)的。当该发生器10的接合工具24依照旋转轴26的平面(plane)对齐时,该发生器10的重心和旋转轴26相一致,因此设备的旋转惯性将降至最小。
本发明的主要优点之一是:即使在高接合力下,该接合工具随着旋转轴26自动保持其共面性。当传统的发生器100置于高接合力下时,该发生器100将发生变形并使得接合工具的末端不再和接合目标匹配(parallel)。当接合力增大时,这种共面性的缺陷变得更差。但是,本发生器10即使在图5所示的形变下,仍能保持该接合工具表面和接合目标的共面性。因此压电元件18的体积能够增大,而形变趋势没有随着增大。而且,更加可取的是,该发生器10比传统的发生器具有更强的功率操作(power handling)能力。
此处描述的本发明在所具体描述的内容基础上很容易产生变化、修正和/或补充,可以理解的是所有这些变化、修正和/或补充都包括在本发明的上述描述的精神和范围内。

Claims (27)

1、一种用于接合装置的发生器,其包含有:
接合工具,其安装于放大角体上,该放大角体固定在第一和第二超声波发生设备之间。
2、如权利要求1所述的发生器,其中该第一和第二超声波发生设备的每个均包含有压电元件组。
3、如权利要求2所述的发生器,其中每个压电元件组包含有相等数目的压电元件。
4、如权利要求2所述的发生器,其中对所述第一和第二压电元件组的极化方向进行配置,由此该第一和第二压电元件组以相反的方向激发。
5、如权利要求4所述的发生器,其包含有单个电源,用于向该第一和第二压电元件组提供电场。
6、如权利要求2所述的发生器,其中每个压电元件组连同后端块体通过固紧设备固定于该放大角体上。
7、如权利要求1所述的发生器,其包含有安装设备,该发生器通过该安装设备安装于接合装置上。
8、如权利要求7所述的发生器,其包含有第一和第二安装撑体,其和该安装设备相连,该第一和第二超声波发生设备分别安装于其上。
9、如权利要求8所述的发生器,其中该发生器在其振动节点处安装于所述的安装撑体上。
10、如权利要求8所述的发生器,其中该接合工具基本设置于该第一和第二安装撑体之间的中心。
11、如权利要求7所述的发生器,其中该安装设备可使该发生器围绕旋转轴旋转。
12、如权利要求11所述的发生器,其中该旋转轴基本和该接合工具的纵向轴线对齐。
13、如权利要求1所述的发生器,其中该放大角体基本为双圆锥形。
14、如权利要求1所述的发生器,其中该接合工具基本安装于该发生器两端之间的中心。
15、如权利要求14所述的发生器,其中该接合工具和该发生器每个端部之间的距离等于该发生器振动波长的一半。
16、如权利要求14所述的发生器,其中该接合工具的纵向轴线实基本垂直于该发生器的轴线。
17、一种用于接合装置的形成发生器的方法,其包含有下述步骤:
提供一放大角体;
将第一和第二超声波发生设备固定于该放大角体上,以便于该放大角体设置于所述的第一和第二超声波发生设备之间;以及
将接合工具安装于该放大角体上。
18、如权利要求17所述的方法,其中该第一和第二超声波发生设备的每个均包含有压电元件组。
19、如权利要求18所述的方法,其包含有:
配置所述第一和第二压电元件组的极化方向,由此该第一和第二压电元件组以相反的方向激发。
20、如权利要求19所述的方法,其包含有:
使用单个电源向该第一和第二压电元件组提供电场。
21、如权利要求17所述的方法,其包含有:
通过安装设备将该发生器安装于接合装置上,该安装设备具有第一和第二安装撑体。
22、如权利要求21所述的方法,其包含有:
在安装该发生器时,在该发生器的振动节点处安装所述的安装撑体。
23、如权利要求21所述的方法,其包含有:
在该第一和第二安装撑体之间的大体中心处设置该接合工具。
24、如权利要求21所述的方法,其包含有:
在该发生器两端之间的大体中心处安装该接合工具。
25、如权利要求24所述的方法,其包含有:
在大体垂直于该发生器的轴线处对齐该接合工具的纵向轴线。
26、如权利要求25所述的方法,其中:
所述的对齐包含有:在固定该超声波发生设备和安装撑体之后,在该放大角体上钻一用于安装接合工具的孔洞,该接合工具和该发生器的轴线大体垂直。
27、如权利要求17所述的方法,其中该放大角体基本为双圆锥形。
CNB2004100460552A 2003-06-03 2004-06-03 用于接合装置的超声波发生器及其形成方法 Active CN100457295C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/454,418 US7002283B2 (en) 2003-06-03 2003-06-03 Ultrasonic transducer assembly
US10/454,418 2003-06-03

Publications (2)

Publication Number Publication Date
CN1572382A true CN1572382A (zh) 2005-02-02
CN100457295C CN100457295C (zh) 2009-02-04

Family

ID=33489731

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100460552A Active CN100457295C (zh) 2003-06-03 2004-06-03 用于接合装置的超声波发生器及其形成方法

Country Status (6)

Country Link
US (1) US7002283B2 (zh)
JP (1) JP2004363612A (zh)
KR (1) KR100571306B1 (zh)
CN (1) CN100457295C (zh)
MY (1) MY135129A (zh)
TW (1) TWI307539B (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100574958C (zh) * 2006-02-28 2009-12-30 先进自动器材有限公司 用于键合装置的换能器组件
CN104051281B (zh) * 2014-06-13 2016-08-31 武汉理工大学 超声波振动辅助倒装芯片塑封成型下填充装置及方法
CN108025388A (zh) * 2015-06-30 2018-05-11 远程声波控股公司 借助超声波扭振焊接构件的装置
CN113523532A (zh) * 2021-09-09 2021-10-22 丰县远博电动车有限公司 新能源机车电池极柱焊接机工装

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8182501B2 (en) 2004-02-27 2012-05-22 Ethicon Endo-Surgery, Inc. Ultrasonic surgical shears and method for sealing a blood vessel using same
PL1802245T3 (pl) 2004-10-08 2017-01-31 Ethicon Endosurgery Llc Ultradźwiękowy przyrząd chirurgiczny
US7156201B2 (en) * 2004-11-04 2007-01-02 Advanced Ultrasonic Solutions, Inc. Ultrasonic rod waveguide-radiator
JP4657964B2 (ja) * 2005-10-07 2011-03-23 株式会社新川 超音波ホーン
US20070191713A1 (en) 2005-10-14 2007-08-16 Eichmann Stephen E Ultrasonic device for cutting and coagulating
US8152825B2 (en) * 2005-10-14 2012-04-10 Ethicon Endo-Surgery, Inc. Medical ultrasound system and handpiece and methods for making and tuning
US7621930B2 (en) 2006-01-20 2009-11-24 Ethicon Endo-Surgery, Inc. Ultrasound medical instrument having a medical ultrasonic blade
US8057498B2 (en) 2007-11-30 2011-11-15 Ethicon Endo-Surgery, Inc. Ultrasonic surgical instrument blades
US8911460B2 (en) 2007-03-22 2014-12-16 Ethicon Endo-Surgery, Inc. Ultrasonic surgical instruments
US8523889B2 (en) 2007-07-27 2013-09-03 Ethicon Endo-Surgery, Inc. Ultrasonic end effectors with increased active length
US8808319B2 (en) 2007-07-27 2014-08-19 Ethicon Endo-Surgery, Inc. Surgical instruments
US8430898B2 (en) 2007-07-31 2013-04-30 Ethicon Endo-Surgery, Inc. Ultrasonic surgical instruments
US9044261B2 (en) 2007-07-31 2015-06-02 Ethicon Endo-Surgery, Inc. Temperature controlled ultrasonic surgical instruments
US8512365B2 (en) 2007-07-31 2013-08-20 Ethicon Endo-Surgery, Inc. Surgical instruments
EP2217157A2 (en) 2007-10-05 2010-08-18 Ethicon Endo-Surgery, Inc. Ergonomic surgical instruments
JP5587191B2 (ja) * 2007-10-10 2014-09-10 エシコン・エンド−サージェリィ・インコーポレイテッド 切断及び凝固のための超音波装置
US10010339B2 (en) 2007-11-30 2018-07-03 Ethicon Llc Ultrasonic surgical blades
US8344596B2 (en) 2009-06-24 2013-01-01 Ethicon Endo-Surgery, Inc. Transducer arrangements for ultrasonic surgical instruments
CN102473658B (zh) 2009-08-12 2014-11-26 库利克和索夫工业公司 用于引线接合的超声波换能器与使用超声波换能器形成引线接合的方法
US8486096B2 (en) 2010-02-11 2013-07-16 Ethicon Endo-Surgery, Inc. Dual purpose surgical instrument for cutting and coagulating tissue
US8951272B2 (en) 2010-02-11 2015-02-10 Ethicon Endo-Surgery, Inc. Seal arrangements for ultrasonically powered surgical instruments
EP2457683A1 (de) * 2010-11-25 2012-05-30 Telsonic Holding AG Torsionales Schweissen
DE102011008576A1 (de) * 2011-01-11 2012-07-12 Devad Gmbh Verfahren und Vorrichtung zur Erzeugung einer schwingenden Bewegung einer Masse
US9820768B2 (en) 2012-06-29 2017-11-21 Ethicon Llc Ultrasonic surgical instruments with control mechanisms
JP5583179B2 (ja) * 2012-08-03 2014-09-03 株式会社カイジョー ボンディング装置
DE102012215994A1 (de) * 2012-09-10 2014-03-13 Weber Ultrasonics Gmbh Verfahren und Schaltungsanordnung zum Bestimmen eines Arbeitsbereichs eines Ultraschall-Schwinggebildes
US10226273B2 (en) 2013-03-14 2019-03-12 Ethicon Llc Mechanical fasteners for use with surgical energy devices
GB2521229A (en) 2013-12-16 2015-06-17 Ethicon Endo Surgery Inc Medical device
US11020140B2 (en) 2015-06-17 2021-06-01 Cilag Gmbh International Ultrasonic surgical blade for use with ultrasonic surgical instruments
US10357303B2 (en) 2015-06-30 2019-07-23 Ethicon Llc Translatable outer tube for sealing using shielded lap chole dissector
US10245064B2 (en) 2016-07-12 2019-04-02 Ethicon Llc Ultrasonic surgical instrument with piezoelectric central lumen transducer
USD847990S1 (en) 2016-08-16 2019-05-07 Ethicon Llc Surgical instrument
US10952759B2 (en) 2016-08-25 2021-03-23 Ethicon Llc Tissue loading of a surgical instrument
US10420580B2 (en) 2016-08-25 2019-09-24 Ethicon Llc Ultrasonic transducer for surgical instrument
CN106298598A (zh) * 2016-11-04 2017-01-04 哈尔滨工业大学深圳研究生院 高强度无偏角的芯片倒装键合换能器
CN112427281B (zh) * 2020-09-18 2022-05-24 集美大学 一种复频超声振动加工装置
CN114388407B (zh) * 2021-12-24 2023-02-17 凌波微步半导体设备(常熟)有限公司 一种键合头装置及键合机
CN114309840B (zh) * 2022-01-18 2023-08-29 苏州科技大学 一种超声振动辅助电火花倒锥微孔加工装置及其控制方法
CN114769693B (zh) * 2022-04-26 2023-12-19 南京工程学院 一种用于超声辅助铣削的扭振刀具平台及其测试系统
CN114857971B (zh) * 2022-04-29 2023-03-21 南京航空航天大学 一种多级频率超声振动脉动热管装置及其运行工艺

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3561462A (en) * 1969-10-10 1971-02-09 Branson Instr Ultrasonic drive assembly for machine tool
US3619671A (en) * 1969-12-29 1971-11-09 Branson Instr Transducer for ultrasonic machine tool
US3708745A (en) * 1970-11-12 1973-01-02 Trustees Of The Ohio State Uni System for measuring output power of a resonant piezoelectric electromechanical transducer
US4193009A (en) * 1976-01-26 1980-03-11 Durley Benton A Iii Ultrasonic piezoelectric transducer using a rubber mounting
JPS58196874A (ja) * 1982-05-12 1983-11-16 多賀電気株式会社 超音波処理装置
JPS60255301A (ja) * 1984-05-30 1985-12-17 Taga Denki Kk 角板形正方共振体共振装置
FR2671743B1 (fr) * 1991-01-17 1993-06-18 Duburque Dominique Dispositif de mise en vibration ultrasonique d'une structure non accordee.
US5319278A (en) * 1992-06-05 1994-06-07 Nec Corporation Longitudinal-torsional resonance ultrasonic motor with improved support structure
JP3078231B2 (ja) * 1995-08-22 2000-08-21 株式会社アルテクス 超音波振動接合装置
CN1179622A (zh) * 1996-09-24 1998-04-22 索尼株式会社 丝焊装置
US6078125A (en) * 1997-07-22 2000-06-20 Branson Ultrasonics Corp. Ultrasonic apparatus
JP3215084B2 (ja) * 1998-04-28 2001-10-02 株式会社アルテクス 超音波振動接合用共振器
JP3536677B2 (ja) * 1998-09-02 2004-06-14 松下電器産業株式会社 ボンディングツールおよびボンディング装置
JP3373810B2 (ja) * 1999-08-02 2003-02-04 株式会社アルテクス 超音波振動接合用超音波ホーン
JP2002035695A (ja) * 2000-07-25 2002-02-05 Arutekusu:Kk 超音波加工用共振器

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100574958C (zh) * 2006-02-28 2009-12-30 先进自动器材有限公司 用于键合装置的换能器组件
CN104051281B (zh) * 2014-06-13 2016-08-31 武汉理工大学 超声波振动辅助倒装芯片塑封成型下填充装置及方法
CN108025388A (zh) * 2015-06-30 2018-05-11 远程声波控股公司 借助超声波扭振焊接构件的装置
CN113523532A (zh) * 2021-09-09 2021-10-22 丰县远博电动车有限公司 新能源机车电池极柱焊接机工装

Also Published As

Publication number Publication date
CN100457295C (zh) 2009-02-04
US20040245893A1 (en) 2004-12-09
KR100571306B1 (ko) 2006-04-17
JP2004363612A (ja) 2004-12-24
MY135129A (en) 2008-02-29
TW200501293A (en) 2005-01-01
KR20040104424A (ko) 2004-12-10
TWI307539B (en) 2009-03-11
US7002283B2 (en) 2006-02-21

Similar Documents

Publication Publication Date Title
CN100457295C (zh) 用于接合装置的超声波发生器及其形成方法
CN100574958C (zh) 用于键合装置的换能器组件
KR100456381B1 (ko) 초음파본딩방법및초음파본딩장치
CN100446206C (zh) 超声波安装方法及采用该方法的超声波安装设备
US8106564B2 (en) Ultrasonic transducer
US10312216B2 (en) Systems and methods for bonding semiconductor elements
CN1418134A (zh) 超声波振动方法与超声波振动装置
US20100065613A1 (en) Electronic component mounting apparatus and electronic component mounting method
TW201831252A (zh) 包括調諧型諧振器的超音波換能器系統、包括該系統的設備及提供該系統的方法
US7850803B2 (en) Method for connecting electronic components, method for forming bump and conductive connection film and fabrication apparatus for electronic component mounted body, bump and conductive correction film
JP4264388B2 (ja) 半導体チップの接合方法および接合装置
JP2714339B2 (ja) ワイヤボンディング装置
KR20080047273A (ko) 강도를 향상시킨 플랜지형 진동자
JP7008370B2 (ja) ワイヤボンディング装置
US20060043149A1 (en) Method of bonding and bonding apparatus for a semiconductor chip
JP4309160B2 (ja) 超音波複合振動体の駆動方法
JPS63242479A (ja) 複合振動を用いた超音波溶接方法およびその装置
JP2001135674A (ja) 電子部品の実装方法
US11590604B2 (en) Mechanical vibration bonding apparatus and mechanical vibration bonding method
US11533003B2 (en) Piezoelectric device including displacement amplification of scissor-hinge structure
JP4893814B2 (ja) 半導体チップの接合方法および接合装置
JP3536677B2 (ja) ボンディングツールおよびボンディング装置
Zhang et al. A new type of dual-branch composite structure-based ultrasonic transducer for microelectronic interconnection and packaging
JP2002343831A (ja) ボンディングヘッド及びこれを備えたボンディング装置
WO2022058311A1 (en) Electronic module and method for connecting several conductors to a substrate

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant