CN1599073A - 固体摄像器件、固体摄像器件的制造方法、摄影机 - Google Patents
固体摄像器件、固体摄像器件的制造方法、摄影机 Download PDFInfo
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- CN1599073A CN1599073A CNA2004100559939A CN200410055993A CN1599073A CN 1599073 A CN1599073 A CN 1599073A CN A2004100559939 A CNA2004100559939 A CN A2004100559939A CN 200410055993 A CN200410055993 A CN 200410055993A CN 1599073 A CN1599073 A CN 1599073A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP285555/2003 | 2003-08-04 | ||
JP2003285555A JP2005057024A (ja) | 2003-08-04 | 2003-08-04 | 固体撮像装置、固体撮像装置の製造方法、カメラ |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1599073A true CN1599073A (zh) | 2005-03-23 |
CN100365820C CN100365820C (zh) | 2008-01-30 |
Family
ID=34113887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100559939A Expired - Fee Related CN100365820C (zh) | 2003-08-04 | 2004-08-04 | 固体摄像器件、固体摄像器件的制造方法、摄影机 |
Country Status (5)
Country | Link |
---|---|
US (7) | US7253399B2 (zh) |
JP (1) | JP2005057024A (zh) |
KR (1) | KR100654143B1 (zh) |
CN (1) | CN100365820C (zh) |
TW (1) | TWI253170B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101339952B (zh) * | 2007-07-04 | 2012-04-25 | 松下电器产业株式会社 | 固体摄像装置和其制造方法 |
CN102693997A (zh) * | 2011-03-23 | 2012-09-26 | 索尼公司 | 固体摄像装置、其制造方法以及电子装置 |
CN105990384A (zh) * | 2015-03-20 | 2016-10-05 | 台湾积体电路制造股份有限公司 | 减少背照式图像传感器中的串扰的复合栅格结构 |
CN105990383A (zh) * | 2015-03-20 | 2016-10-05 | 台湾积体电路制造股份有限公司 | 用于降低背照式图像传感器中的串扰的复合栅格结构 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005057024A (ja) * | 2003-08-04 | 2005-03-03 | Matsushita Electric Ind Co Ltd | 固体撮像装置、固体撮像装置の製造方法、カメラ |
JP5119668B2 (ja) * | 2004-10-15 | 2013-01-16 | コニカミノルタホールディングス株式会社 | 固体撮像装置 |
US20060169870A1 (en) * | 2005-02-01 | 2006-08-03 | Silsby Christopher D | Image sensor with embedded optical element |
US7829965B2 (en) * | 2005-05-18 | 2010-11-09 | International Business Machines Corporation | Touching microlens structure for a pixel sensor and method of fabrication |
KR100679856B1 (ko) | 2005-06-09 | 2007-02-07 | (주) 픽셀플러스 | 좌우상하 비율에 따라 서로 다른 비율로 배치되는마이크로렌즈를 포함하는 이미지 센서 |
JP2007127842A (ja) * | 2005-11-04 | 2007-05-24 | Sharp Corp | 撮像装置 |
US7544982B2 (en) * | 2006-10-03 | 2009-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor device suitable for use with logic-embedded CIS chips and methods for making the same |
US7879631B2 (en) * | 2006-10-24 | 2011-02-01 | Hong Jim T | Systems and methods for on-die light sensing with low leakage |
KR100937654B1 (ko) * | 2006-12-12 | 2010-01-19 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조방법 |
KR100848945B1 (ko) * | 2007-01-19 | 2008-07-29 | 주식회사 디오스텍 | 주광선 손실을 보상하는 마이크로렌즈 어레이 및 이를포함하는 이미지센서 조립체 |
US7659501B2 (en) * | 2007-03-30 | 2010-02-09 | United Microelectronics Corp. | Image-sensing module of image capture apparatus and manufacturing method thereof |
JP4957564B2 (ja) * | 2008-01-23 | 2012-06-20 | 大日本印刷株式会社 | 固体撮像素子およびそれを用いた撮像装置 |
JP5269454B2 (ja) | 2008-03-25 | 2013-08-21 | 株式会社東芝 | 固体撮像素子 |
JP5357441B2 (ja) * | 2008-04-04 | 2013-12-04 | キヤノン株式会社 | 固体撮像装置の製造方法 |
JP2010166004A (ja) * | 2009-01-19 | 2010-07-29 | Panasonic Corp | 半導体装置及びその製造方法 |
US8300108B2 (en) | 2009-02-02 | 2012-10-30 | L-3 Communications Cincinnati Electronics Corporation | Multi-channel imaging devices comprising unit cells |
JP2011009365A (ja) * | 2009-06-24 | 2011-01-13 | Fujifilm Corp | 固体撮像素子及びその製造方法 |
JP5556122B2 (ja) * | 2009-10-27 | 2014-07-23 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、電子機器 |
TWI484236B (zh) * | 2013-09-09 | 2015-05-11 | Himax Imaging Ltd | 影像感測器 |
JP2015109314A (ja) * | 2013-12-03 | 2015-06-11 | 株式会社東芝 | 固体撮像装置 |
KR20150081093A (ko) * | 2014-01-03 | 2015-07-13 | 삼성전자주식회사 | 이미지 센서, 및 이를 포함하는 이미지 처리 시스템 |
US9513411B2 (en) * | 2014-07-31 | 2016-12-06 | Visera Technologies Company Limited | Double-lens structures and fabrication methods thereof |
KR102372745B1 (ko) * | 2015-05-27 | 2022-03-11 | 에스케이하이닉스 주식회사 | 이미지 센서 및 이를 구비하는 전자장치 |
CN107968907B (zh) * | 2017-12-13 | 2020-06-02 | 武汉电信器件有限公司 | 一种透镜阵列与pd阵列贴装的装置及方法 |
GB2576212B (en) | 2018-08-10 | 2021-12-29 | X Fab Semiconductor Foundries Gmbh | Improvements in lens layers for semiconductor devices |
CN110034145B (zh) * | 2019-04-23 | 2021-09-14 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
CN110021618B (zh) * | 2019-04-25 | 2022-04-29 | 德淮半导体有限公司 | 一种图像传感器及其制造方法 |
TW202044566A (zh) * | 2019-05-10 | 2020-12-01 | 日商索尼半導體解決方案公司 | 攝像元件及電子機器 |
KR20210046989A (ko) * | 2019-10-21 | 2021-04-29 | 삼성전자주식회사 | 개선된 감도를 가지는 이미지 센서 및 이미지 센싱 방법 |
KR20220098500A (ko) * | 2021-01-04 | 2022-07-12 | 삼성전자주식회사 | 이미지 센서 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5239412A (en) * | 1990-02-05 | 1993-08-24 | Sharp Kabushiki Kaisha | Solid image pickup device having microlenses |
US5118924A (en) * | 1990-10-01 | 1992-06-02 | Eastman Kodak Company | Static control overlayers on opto-electronic devices |
JPH05346556A (ja) * | 1992-06-12 | 1993-12-27 | Victor Co Of Japan Ltd | 固体撮像素子 |
JPH06232379A (ja) | 1993-02-01 | 1994-08-19 | Sharp Corp | 固体撮像素子 |
JPH06326284A (ja) * | 1993-05-12 | 1994-11-25 | Matsushita Electron Corp | カラー固体撮像装置 |
JPH09148549A (ja) * | 1995-11-25 | 1997-06-06 | Sony Corp | オンチップレンズ付カラー固体撮像素子 |
JPH10189929A (ja) | 1996-12-20 | 1998-07-21 | Sony Corp | 固体撮像素子 |
JPH10229180A (ja) * | 1997-02-14 | 1998-08-25 | Sony Corp | 固体撮像素子 |
JP3604116B2 (ja) | 1997-10-06 | 2004-12-22 | 松下電器産業株式会社 | 固体撮像装置 |
JP2001160973A (ja) | 1999-12-02 | 2001-06-12 | Nikon Corp | 固体撮像素子及び電子カメラ |
US6518640B2 (en) * | 1999-12-02 | 2003-02-11 | Nikon Corporation | Solid-state image sensor, production method of the same, and digital camera |
JP3478796B2 (ja) | 2000-11-30 | 2003-12-15 | キヤノン株式会社 | 固体撮像装置 |
JP3571982B2 (ja) * | 2000-01-27 | 2004-09-29 | キヤノン株式会社 | 固体撮像装置及びそれを備えた固体撮像システム |
US6995800B2 (en) | 2000-01-27 | 2006-02-07 | Canon Kabushiki Kaisha | Image pickup apparatus utilizing a plurality of converging lenses |
JP2001358320A (ja) * | 2000-06-15 | 2001-12-26 | Sony Corp | 固体撮像素子及びその製造方法、並びにオンチップレンズ金型の製造方法 |
KR20030042305A (ko) | 2001-11-22 | 2003-05-28 | 주식회사 하이닉스반도체 | 시모스 이미지센서의 제조방법 |
JP2003209230A (ja) | 2002-01-11 | 2003-07-25 | Sony Corp | 固体撮像装置およびその製造方法 |
US6861280B2 (en) * | 2002-10-25 | 2005-03-01 | Omnivision International Holding Ltd | Image sensor having micro-lenses with integrated color filter and method of making |
JP2005057024A (ja) * | 2003-08-04 | 2005-03-03 | Matsushita Electric Ind Co Ltd | 固体撮像装置、固体撮像装置の製造方法、カメラ |
JP4447988B2 (ja) * | 2004-08-24 | 2010-04-07 | パナソニック株式会社 | 固体撮像装置、その製造方法およびカメラ |
-
2003
- 2003-08-04 JP JP2003285555A patent/JP2005057024A/ja active Pending
-
2004
- 2004-07-30 TW TW093122908A patent/TWI253170B/zh active
- 2004-07-30 KR KR1020040060445A patent/KR100654143B1/ko not_active IP Right Cessation
- 2004-08-03 US US10/909,311 patent/US7253399B2/en active Active
- 2004-08-04 CN CNB2004100559939A patent/CN100365820C/zh not_active Expired - Fee Related
-
2006
- 2006-11-15 US US11/599,353 patent/US7531782B2/en active Active
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2007
- 2007-04-11 US US11/783,701 patent/US7456381B2/en active Active
- 2007-04-11 US US11/783,703 patent/US7411180B2/en active Active
- 2007-04-11 US US11/783,702 patent/US7417214B2/en active Active
- 2007-06-20 US US11/812,613 patent/US7459665B2/en active Active
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2009
- 2009-04-06 US US12/418,811 patent/US7919743B2/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101339952B (zh) * | 2007-07-04 | 2012-04-25 | 松下电器产业株式会社 | 固体摄像装置和其制造方法 |
CN102693997A (zh) * | 2011-03-23 | 2012-09-26 | 索尼公司 | 固体摄像装置、其制造方法以及电子装置 |
CN105990384A (zh) * | 2015-03-20 | 2016-10-05 | 台湾积体电路制造股份有限公司 | 减少背照式图像传感器中的串扰的复合栅格结构 |
CN105990383A (zh) * | 2015-03-20 | 2016-10-05 | 台湾积体电路制造股份有限公司 | 用于降低背照式图像传感器中的串扰的复合栅格结构 |
CN105990384B (zh) * | 2015-03-20 | 2019-06-14 | 台湾积体电路制造股份有限公司 | 减少背照式图像传感器中的串扰的复合栅格结构 |
CN105990383B (zh) * | 2015-03-20 | 2020-06-12 | 台湾积体电路制造股份有限公司 | 用于降低背照式图像传感器中的串扰的复合栅格结构 |
Also Published As
Publication number | Publication date |
---|---|
JP2005057024A (ja) | 2005-03-03 |
US7417214B2 (en) | 2008-08-26 |
US7919743B2 (en) | 2011-04-05 |
US7459665B2 (en) | 2008-12-02 |
US20070187576A1 (en) | 2007-08-16 |
US7253399B2 (en) | 2007-08-07 |
US7456381B2 (en) | 2008-11-25 |
US20090197366A1 (en) | 2009-08-06 |
TWI253170B (en) | 2006-04-11 |
KR100654143B1 (ko) | 2006-12-05 |
CN100365820C (zh) | 2008-01-30 |
US20070246640A1 (en) | 2007-10-25 |
TW200511570A (en) | 2005-03-16 |
US20070057153A1 (en) | 2007-03-15 |
US20070194209A1 (en) | 2007-08-23 |
US20070187575A1 (en) | 2007-08-16 |
US20050029433A1 (en) | 2005-02-10 |
US7531782B2 (en) | 2009-05-12 |
KR20050016071A (ko) | 2005-02-21 |
US7411180B2 (en) | 2008-08-12 |
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