CN1625313A - 电流驱动型发光显示装置及其制造方法 - Google Patents

电流驱动型发光显示装置及其制造方法 Download PDF

Info

Publication number
CN1625313A
CN1625313A CNA031424759A CN03142475A CN1625313A CN 1625313 A CN1625313 A CN 1625313A CN A031424759 A CNA031424759 A CN A031424759A CN 03142475 A CN03142475 A CN 03142475A CN 1625313 A CN1625313 A CN 1625313A
Authority
CN
China
Prior art keywords
film transistor
current
thin
potential
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA031424759A
Other languages
English (en)
Other versions
CN100440569C (zh
Inventor
木村睦
伊藤友幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN1625313A publication Critical patent/CN1625313A/zh
Application granted granted Critical
Publication of CN100440569C publication Critical patent/CN100440569C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B44/00—Circuit arrangements for operating electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0404—Matrix technologies
    • G09G2300/0417—Special arrangements specific to the use of low carrier mobility technology
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
    • G09G2300/0866—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes by means of changes in the pixel supply voltage
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0876—Supplementary capacities in pixels having special driving circuits and electrodes instead of being connected to common electrode or ground; Use of additional capacitively coupled compensation electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/06—Details of flat display driving waveforms
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3266—Details of drivers for scan electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3275—Details of drivers for data electrodes
    • G09G3/3291—Details of drivers for data electrodes in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Abstract

在由薄膜晶体管驱动的有机EL显示元件中，为了抑制薄膜晶体管的随时间劣化，由p沟道型薄膜晶体管形成薄膜晶体管中的至少一个或第二薄膜晶体管。按与内装于驱动电路中的薄膜晶体管相同的工艺形成p沟道型薄膜晶体管。

Description

电流驱动型发光显示装置及其制造方法
技术领域
本发明涉及使用薄膜晶体管驱动有机场致发光(以下称为EL)显示元件等的电流发光元件的显示装置。特别涉及可抑制随时间劣化的薄膜晶体管驱动的电流驱动型发光显示装置及其制造方法。
(背景技术)
本发明的发明者详细调查了薄膜晶体管驱动有机EL显示元件。其结果如下。
(1)在薄膜晶体管驱动有机EL显示元件中，由于有机EL显示元件为直流电流元件，所以在为了控制它而串联接入的薄膜晶体管中也有直流电流流过。
(2)薄膜晶体管分类成n沟道型和p沟道型。所谓n沟道型和p沟道型，其随时间劣化的情况很不相同。
因此，本发明的目的在于，在由薄膜晶体管驱动的电流发光元件中，抑制薄膜晶体管随时间劣化。
(发明的公开)
(1)根据本发明第一方案的电流驱动型发光显示装置，该装置形成多根扫描线和多根数据线，与扫描线和数据线的各交点对应地形成薄膜晶体管和电流发光元件，其特征在于，薄膜晶体管中的至少一个是p沟道型薄膜晶体管。
按照第一方案，能够抑制薄膜晶体管的随时间劣化。
(2)根据本发明的第二方案的电流驱动型发光显示装置，该装置形成多根扫描线、多根数据线、公共电极和反向电极，对应于扫描线和数据线的各交点，形成第一薄膜晶体管、第二薄膜晶体管、保持电容、像素电极和电流发光元件，所述第一薄膜晶体管通过扫描线的电位控制扫描线与保持电容的导通，所述第二薄膜晶体管通过保持电容的电位控制公共电极与像素电极的导通，控制流过位于像素电极和反向电极之间的所述电流发光元件的电流，此电流驱动型发光显示装置的特征在于，第二薄膜晶体管为p沟道型薄膜晶体管。
(3)根据本发明第三方案的电流驱动型发光显示装置，如第一方案或第二方案所述，在基板上形成所述多根扫描线、所述多根数据线、所述薄膜晶体管和所述电流发光元件，同时还形成用于驱动所述发光元件的驱动电路，其特征在于，用与形成所述驱动电路内的薄膜晶体管相同的工艺形成所述p沟道型薄膜晶体管。
(4)在方案1至方案3的任何一项方案所述的电流驱动型发光显示装置中，所述薄膜晶体管由多晶硅薄膜晶体管构成。
(5)根据本发明第五方案，构成第三方案所述的电流驱动型发光显示装置，其特征在于，所述驱动电路由互补型薄膜晶体管构成，用相同的工艺形成所述第一薄膜晶体管和所述驱动电路内的n沟道型薄膜晶体管，用相同的工艺形成所述第二薄膜晶体管和所述驱动电路内的p沟道型薄膜晶体管。
按照第五方案，能够不增加制造工艺，提供没有随时间劣化的高性能的电流驱动型发光显示装置。
(附图的简单说明)
图1是表示采用本发明的显示装置的基本结构的方框图。
图2是表示配有本发明实施例1的薄膜晶体管的显示元件的等效电路图。
图3是表示配有本发明实施例1的薄膜晶体管的显示元件的驱动电压图。
图4是表示本发明实施例1的电流薄膜晶体管的电流电压特性图。
图5是表示本发明实施例1的有机EL显示元件的电流电压特性图。
图6(a)表示配有本发明实施例1的薄膜晶体管的有机EL显示元件的剖面图，图6(b)表示配有本发明实施例1的薄膜晶体管的有机EL显示元件的平面图。
图7是表示配有本发明实施例2的薄膜晶体管的有机EL显示元件的等效电路图。
图8是表示配有本发明实施例2的薄膜晶体管的有机EL显示元件的驱动电压图。
图9是表示本发明实施例2的电流薄膜晶体管的电流电压特性图。
图10是表示本发明实施例2的有机EL显示元件的电流电压特性图。
图11(a)表示配有本发明实施例2的薄膜晶体管的有机EL显示元件的剖面图，图11(b)表示配有本发明实施例2的薄膜晶体管的有机EL显示元件的平面图。
图12是表示n沟道型薄膜晶体管的随时间劣化图。
图13是表示p沟道型薄膜晶体管的随时间劣化图。
图14是表示本发明薄膜晶体管驱动的有机EL显示元件的制造工艺的图。
(符号的说明)
111扫描线
112数据线
113公共线
114保持电极
115用Al形成的像素电极
116用ITO形成的反向电极
121开关薄膜晶体管
122n沟道型电流薄膜晶体管
123保持电容
131正向偏置有机EL显示元件
132孔穴注入层
133有机EL层
141电流发光元件的电流方向
151抗蚀剂
211扫描电位
212信号电位
213保持电位
214公共电位
215像素电极
216反向电位
221像素变为显示状态的期间
222像素变为非显示状态的期间
31漏极电压4V时的n沟道型电流薄膜晶体管的电流电压特性
32漏极电压8V时的n沟道型电流薄膜晶体管的电流电压特性
4正向偏置有机EL显示元件的电流电压特性
611扫描线
612数据线
613公共线
614保持电极
615用ITO形成的像素电极
616用Al形成的反向电极
621开关薄膜晶体管
622p沟道型电流薄膜晶体管
623保持电容
631反向偏置有机EL显示元件
632孔穴注入层
633有机EL层
641电流发光元件的电流方向
651抗蚀剂
711扫描电位
712信号电位
713保持电位
714公共电位
715像素电位
716反向电位
721像素变为显示状态的期间
722像素变为非显示状态的期间
81漏极电压4V时的p沟道型电流薄膜晶体管的电流电压特性
82漏极电压8V时的p沟道型电流薄膜晶体管的电流电压特性
9反向偏置有机EL显示元件的电流电压特性
511施加电压前的Vd＝4V时n沟道型薄膜晶体管的传输特性
512施加电压前的Vd＝8V时n沟道型薄膜晶体管的传输特性
521施加电压后的Vd＝4V时n沟道型薄膜晶体管的传输特性
522施加电压后的Vd＝8V时n沟道型薄膜晶体管的传输特性
811施加电压前的Vd＝4V时p沟道型薄膜晶体管的传输特性
812施加电压前的Vd＝8V时p沟道型薄膜晶体管的传输特性
821施加电压后的Vd＝4V时p沟道型薄膜晶体管的传输特性
822施加电压后的Vd＝8V时p沟道型薄膜晶体管的传输特性
(实施发明的优选实施例)
(有机EL显示元件的整体结构)
下面，参照附图说明本发明的优选实施例。
如图1所示，基板1上的中央部分为显示部分。在透明基板1的外周部分内，在对着图面的上侧构成相对于数据线112的输出图象信号的数据侧驱动电路3，在对着图面的左侧构成相对于扫描线111的输出扫描信号的扫描侧驱动电路4。在这些驱动电路3、4中，由N型薄膜晶体管和P型薄膜晶体管构成互补型TFT，该互补型薄膜晶体管构成移位寄存器电路、电平移动电路、模拟开关电路等。
在透明基板1上，构成多根扫描线111和在相对于该扫描线111的延伸方向的垂直方向上延伸的多根数据线112，通过这些数据线112和扫描线111的交叉构成矩阵形式的像素7。
通过扫描线111把扫描信号供给栅极21(第一栅极)的第一薄膜晶体管121(以下称为开关薄膜晶体管)，构成那些像素7。该开关薄膜晶体管121的源/漏区的一方与数据线112电连接，源/漏区的另一方与电位保持电极113电连接。此外，相对于扫描线111，并联配置公共线114，在该公共线114和电位保持电极113之间形成保持电容123。公共线保持固定电位。因此，如果通过扫描信号进行选择，使开关薄膜晶体管121变为导通状态，那么来自扫描线112的图象信号通过开关薄膜晶体管写入保持电容123。
在电位保持电极113上电连接第二薄膜晶体管122(以下称为电流薄膜晶体管)的栅极，该电流薄膜晶体管122的源/漏区的一方与公共线114电连接，源/漏区的另一方与发光元件131一方的电极115电连接。在电流薄膜晶体管122变为导通状态时，通过电流薄膜晶体管122，公共线114的电流流入有机EL显示元件等发光元件131，使该发光元件131发光。而且，在本结构中，保持电容的一个电极与公共线114连接，但也可以不与公共线114连接，另外设置电容线，使其与电容线连接。再有，也可以构成把保持电容的一个电极与邻接的栅极线连接的结构。
(实施例1)
图1是表示配有本发明实施例1的薄膜晶体管的有机EL显示元件的等效电路图，图2是表示配有本发明实施例1的薄膜晶体管的有机EL显示元件的驱动电压图，图3是表示本发明实施例1的电流薄膜晶体管的电流电压特性图，图4是表示本发明实施例1的有机EL显示元件的电流电压特性图。
图1中，111是扫描线，112是数据线，113是保持电极，114是公共线，115是用Al形成的像素电极，116是用ITO形成的反向电极，121是开关薄膜晶体管，122是n沟道型电流薄膜晶体管，123是保持电容，131是利用从供电线116向像素电极115流动的电流发光的有机EL显示元件13(以下称为正向偏置有机EL显示元件)，141是有机EL显示元件的电流方向。
图2中，211是扫描电位，212是信号电位，213是保持电位，214是公共电位，215是像素电位，216是反向电位。而且，为了说明图2中各电位关系，仅记述各电位的一部分。扫描线111的电位对应于扫描电位211，数据线112的电位对应于信号电位212，保持电极113的电位对应于保持电位213，公共线114的电位对应于公共电位214，用Al形成的像素电极115的电位对应于像素电位215，用ITO(铟锡氧化物)形成的反向电极116的电位对应于反向电位216。而且，图2是按模式部分记述各信号电位的图。
221表示在像素变为显示状态的期间在正向偏置有机EL显示元件131中流过电流发光，222表示在像素变为非显示状态的期间在正向偏置有机EL显示元件131中没有电流流过不发光。
图4中，31是漏极电压4V时的n沟道型电流薄膜晶体管122的电流电压特性，32是漏极电压8V时的n沟道型电流薄膜晶体管122的电流电压特性。显然，无论在哪个漏极电压中，当栅极为低电压时，n沟道型电流薄膜晶体管122都变为关闭状态，流过小的漏极电流，源/漏间的电阻变为高电阻，而当栅极电压为高电压时，n沟道型电流薄膜晶体管122变为导通状态，流过大的漏极电流，源/漏间的电阻变为低电阻。
图5中，4是正向偏置有机EL显示元件131的电流电压特性。其中，电压是表示相对于像素电位215的反向电位216，电流是表示从反向电极116向像素电极115流动的电流。正向偏置有机EL显示元件131在某个阈值电压以下时变为关闭状态，呈现高电阻，没有电流流过，不发光。在阈值电压以上时，则变为导通状态，呈现低电阻，有电流流过，并发光。其中，阈值电压大约为2V。
下面，用图2、图3、图4和图5说明配有本实施例的薄膜晶体管的有机EL显示元件的工作。
开关薄膜晶体管121利用扫描线111的电位控制数据线112与保持电极113的导通。也就是说，利用扫描电位211，控制信号电位212与保持电位213的导通。再有，其中开关薄膜晶体管121是n沟道薄膜晶体管，但p沟道薄膜晶体管也可以。
相对于像素变为显示状态的期间221，信号电位212变成高电位，在保持电位213上保持其高电位。相对于像素变为非显示状态的期间222，信号电位212变成低电位，在保持电位213上保持其低电位。
n沟道型电流薄膜晶体管122有图3所示的特性，由保持电极113的电位控制公共线114与像素电极115的导通。也就是说，由保持电位213控制公共电位214与像素电位222的导通。相对于像素变为显示状态的期间221，由于保持电位213为高电位，所以公共线114与像素电极115导通，相对于像素变为非显示状态的期间222，由于保持电位213为低电位，所以公共线114与像素电极115之间被断开。
有机EL显示元件131有图5所示的特性，相对于像素变为显示状态的期间221，在像素电极115与反向电极116间流过电流，有机EL显示元件131发光。相对于像素变为非显示状态的期间222，没有电流流过，不发光。
图6(a)表示配有本发明实施例的薄膜晶体管有机EL显示元件(一像素)的剖面图，图6(b)表示本发明实施例的薄膜晶体管有机EL显示元件(一像素)的平面图。图6(a)的剖面A-A’与图6(b)的剖面A-A’对应。
图5中，132是孔穴注入层，133是有机EL层，151是抗蚀剂。
再有，其中有关的开关薄膜晶体管121和n沟道型电流薄膜晶体管122被用作薄膜晶体管液晶显示元件。采用低温多晶硅薄膜晶体管的结构和工艺处理，即采用顶部栅极结构和最高温度600度以下的工艺处理，但采用其它结构和工艺处理也可以。
通过用Al形成的像素电极115、用ITO形成的反向电极116、孔穴注入层132和有机EL层133，形成正向偏置有机EL显示元件131。在该正向偏置有机EL显示元件131中，能够使有机EL显示元件的电流方向141从用ITO形成的反向电极116流向用Al形成的像素电极115。再有，有关有机EL显示元件，即使不用这里使用的结构，只要使有机EL显示元件的电流方向141能够从反向电极向像素电极方向流动，采用其它结构也可以。
再有，其中采用抗蚀剂151作为各像素间的分离结构，按喷墨印刷法形成孔穴注入层132和有机EL层133，用溅射法形成由ITO构成的反向电极116，当然采用其他方法也可以。
在本实施例中，与反向电位216相比，公共电位214为低电位。并且，电流薄膜晶体管为n沟道型电流薄膜晶体管122。
在像素变为显示状态的期间221中，n沟道型电流薄膜晶体管122变为导通状态。如图3所示，流过正向偏置有机EL显示元件131的电流，即n沟道型电流薄膜晶体管122的导通电流依赖于栅极电压。其中，所谓栅极电压是保持电位213与公共电位214和像素电位215中的低电位一方的电位差。按照本实施例，由于公共电位214变为比像素电位215低的电位，所以栅极电压变为保持电位213与公共电位214的电位差。由于该电位差达到充分大，所以可获得充分大的导通电流。再有，n沟道型电流薄膜晶体管122的导通电流也依赖于漏极电压，但上述结论不变。
此外，相反地，为了获得必要的导通电流，应能够使保持电位213达到更低的电位，能够降低信号电位212的振幅，从而可降低扫描电位211的振幅。也就是说，在开关薄膜晶体管121和n沟道型电流薄膜晶体管122中，可不导致画质的劣化、工作异常和工作频率下降，而实现驱动电压的下降。
还有，在本实施例中，相对于处于显示状态的像素的信号电位212是比反向电位216低的电位。
如上所述，在像素变为显示状态的期间221中，n沟道型电流薄膜晶体管122的导通电流依赖于保持电位213与公共电位214的电位差，而不直接依赖于保持电位213与反向电位216的电位差。因此，在n沟道型电流薄膜晶体管122中，确保了充分大的导通电流，同时能够使保持电位213，也就是使相对于处于显示状态的像素的信号电位212能够变成比反向电位216低的低电位，从而能够降低信号电位212的振幅和扫描电位211的振幅。也就是说，在开关薄膜晶体管121和n沟道型电流薄膜晶体管122中，可不导致画质的劣化、工作异常和工作频率下降，而实现驱动电压的下降。
并且，在本实施例中，相对于处于非显示状态的像素的信号电位212是比公共电位214高的电位。
在像素处于非显示状态的期间222中，与公共电位214相比，在信号电位212稍微变为高电位的情况下，n沟道型电流薄膜晶体管122就不能达到完全关闭状态。但是，如图3所示，n沟道型电流薄膜晶体管122的源/漏间电阻变成相当大的高电阻。因此，通过按n沟道型电流薄膜晶体管122的电阻值和正向偏置有机EL显示元件131的电阻值来分开公共电位214和反向电位216而决定的像素电位215就变为反向电位216附近的电位。
施加在正向偏置有机EL显示元件131上的电压是像素电位215与反向电位216的电位差，如图5所示，在某个阈值电压以下时，变为关闭状态，没有电流流过，不发光。也就是说，通过利用正向偏置有机EL显示元件131的阈值电压，与公共电位214相比，信号电位212为稍微高些的高电位，n沟道型电流薄膜晶体管122也未达到完全关闭状态，不可能使正值有机EL显示元件131发光。
其中，与公共电位214相比，通过使相对于处于非显示状态的像素的信号电位212为高电位，就能够降低信号电位212的振幅，从而降低扫描电位211的振幅。也就是说，在开关薄膜晶体管121和n沟道型电流薄膜晶体管122中，可不导致画质的劣化、工作异常和工作频率下降，而实现驱动电压的下降。
再有，配有本实施例的薄膜晶体管的有机EL显示元件的动作不象上述那样简单，而是以更复杂的电压和电流之间的关系进行动作，但就近似和定性而言，上述说明成立。
(实施例2)
图7是表示配有本发明实施例2的薄膜晶体管的有机EL显示元件的等效电路图，图8是表示配有本发明实施例2的薄膜晶体管的有机EL显示元件的驱动电压图，图9是表示本发明实施例2的电流薄膜晶体管的电流电压特性图，图10是表示本发明实施例2的有机EL显示元件的电流电压特性图。
图7中，615是用ITO形成的像素电极，616是用Al形成的反向电极，622是p沟道型电流薄膜晶体管，631是利用从像素电极615流入供电线616的电流发光的有机EL显示元件(以下称为反向偏置有机EL显示元件)。641是有机EL显示元件的电流方向，但与图1的方向相反。除此之外，与上述实施例1和图1相同。
图8中，各电位的电平与图2不同。除此之外，与图2相同。
图9中，81是漏极电压为4V时的p沟道型电流薄膜晶体管622的电流电压特性，82是漏极电压为8V时的p沟道型电流薄膜晶体管622的电流电压特性。
图10中，9是反向偏置有机EL显示元件631的电流电压特性。
配有本实施例薄膜晶体管的有机EL显示元件的动作，除利用电流薄膜晶体管为p沟道型薄膜晶体管622，使有关的电流薄膜晶体管的电位关系反相外，与实施例1相同。
图11(a)表示配有本发明实施例的薄膜晶体管的有机EL显示元件(一像素)的剖面图，图11(b)表示配有本发明实施例2的薄膜晶体管的有机EL显示元件(一像素)的平面图。图11(a)的剖面A-A’与图11(b)的剖面A-A’对应。
图10中，632是孔穴注入层，633是有机EL层。除此之外，与图5相同。
通过用ITO形成的像素电极615、用Al形成的反向电极616、孔穴注入层632和有机EL层633，形成反向偏置EL显示元件631。在该反向偏置EL显示元件631中，能够使有机EL显示元件的电流方向641成为从用ITO形成的像素电极615向用Al形成的反向电极616的方向。
在本实施例中，与反向电位716相比，公共电位714为高电位。并且，电流薄膜晶体管为p沟道型电流薄膜晶体管622。
再有，在本实施例中，与反向电位716相比，相对于处于显示状态的像素的信号电位712为高电位。
再有，在本实施例中，与公共电位714相比，相对于处于非显示状态的像素的信号电位712为低电位。
除电流薄膜晶体管为p沟道型薄膜晶体管622，与电流薄膜晶体管有关的电位关系被反相外，本实施例的薄膜晶体管有机EL显示元件的全部效果与实施例1相同。
在本实施例中，电流薄膜晶体管122是p沟道型薄膜晶体管。利用该结构，可以使电流薄膜晶体管122的随时间劣化显著地降低。此外，利用p沟道型的多晶硅薄膜晶体管的结构，还能够降低电流薄膜晶体管122的随时间劣化。
图14是表示配有上述本发明实施例的薄膜晶体管的电流驱动型发光显示装置的制造工艺图。
首先，如图14(a)所示，在基板1上把200～600埃的非晶硅层形成在整个基板上，通过实施激光等退火使非晶硅多结晶化，形成多晶硅层。然后，把多晶硅层做成图案，形成作为开关薄膜晶体管121的源/漏及沟道区的硅薄膜421，存储电容123的第一电极423，和作为电流薄膜晶体管122的源/漏及沟道区的硅薄膜422。接着，在硅薄膜421、422和第一电极423上形成作为栅极绝缘膜的绝缘膜424。随后，在第一电极423上有选择地注入磷(P)离子，进行低电阻化。之后，如图14(b)所示，在硅薄膜421和422上通过栅极绝缘膜形成由TaN层构成的栅极111和111’。然后，在作为电流薄膜晶体管的硅层422上形成抗蚀剂掩模42，以栅极为掩模，按自对准方式进行磷(P)的离子注入，在硅层421上形成n型的源/漏区。接着，如图14(c)所示，在第一硅层421和第一电极上形成抗蚀剂掩模412’，在硅层422上以栅极111’为掩模，按自对准进行硼(B)的离子注入，在硅层422上形成p型的源和漏区。这样，利用n沟道型杂质掺杂411，形成开关薄膜晶体管121。此时，电流薄膜晶体管122由抗蚀剂掩模42保护，不进行n沟道型杂质掺杂411。接着，利用p沟道型杂质掺杂412，形成开关薄膜晶体管122。
此外，图中虽未示出，但在同一基板形成的情况下，也可以用与上述工艺相同的处理同时形成驱动开关薄膜晶体管121的驱动电路部分的移位寄存器、构成采样保持电路等的薄膜晶体管。
再有，也可以用与栅极111和111’相同的材料同时形成存储电容的第二电极425，用其它材料形成也可以。
随后，如图14(d)所示，在形成层间绝缘膜43，形成接触孔后，形成由铝和ITO构成的电极层426、427、428和429。
然后，在形成层间绝缘膜44进行平坦化后，形成接触孔，形成100～2000埃、最好为约1600埃的ITO45，以便能够连接电流薄膜晶体管的一个电极。接着，相对于各像素区域，分开形成2.0μm以上的阻挡层(バンク層)46、47。接着，在由阻挡层46、47包围的区域中，利用喷墨方式等形成有机EL层48。在形成有机EL层48后，在有机EL层48上用6000～8000埃构成的铝锂形成为反向电极49。在有机EL48和反向电极49之间还可以设有如图5所示的孔穴注入层。
利用上述工艺，能够形成高性能的薄膜晶体管驱动的有机EL显示元件。此外，与非晶硅相比，由于多晶硅的载流子的迁移率特别大，所以能够高速动作。
具体地说，在本实施例中，在形成p型电流薄膜晶体管122和n型开关薄膜晶体管121时，能够采用上述实施例同时形成构成驱动电路的移位寄存器、采样保持电路等的互补型薄膜晶体管的p型和n型的薄膜晶体管。按照该结构，可获得降低电流薄膜晶体管122随时间劣化的结构，并且在不增加制造过程的情况下就能够实现。
在如上所述的实施例1中，说明了电流薄膜晶体管为n沟道型的结构，在实施例2中说明了电流薄膜晶体管为p沟道型的结构，下面研讨p沟道型和n沟道型的薄膜晶体管的随时间劣化。
图12和图13是表示在同等的施加电压条件下，n沟道型和p沟道型薄膜晶体管，特别是多晶硅薄膜晶体管的随时间劣化的图。图12的511、512表示施加电压前的Vd＝4V、Vd＝8V时n沟道型薄膜晶体管的传输特性。此外，521、522表示Vg＝0V、Vd＝15V、1000秒左右的施加电压后的Vd＝4V、Vd＝8V时n沟道型薄膜晶体管的传输特性。图13的811、812表示施加电压前的Vd＝4V、Vd＝8V时p沟道型薄膜晶体管的传输特性。此外，821、822表示Vg＝0V、Vd＝15V、1000秒左右的施加电压后的Vd＝4V、Vd＝8V时p沟道型薄膜晶体管的传输特性。显然，可以看出，p沟道型薄膜晶体管的一方，虽然导通电流减小和关闭电流增加，但都较小。
考虑到图12和图13所示的p型和n型的薄膜晶体管的随时间劣化特性的不同，通过用p沟道型薄膜晶体管、特别是用p型多晶硅薄膜晶体管构成开关薄膜晶体管和电流薄膜晶体管中的至少一个，就能够抑制随时间劣化。再有，不仅电流薄膜晶体管，而且还通过用p型薄膜晶体管构成开关薄膜晶体管，也能够维持显示元件的特性。
此外，虽然上述实施例用有机EL显示元件作为发光元件进行了说明，但不用说，它并不限于有机EL显示元件，也适用于无机EL元件或其它电流驱动型发光元件。
(工业上的利用领域)
本发明的显示装置可作为备有有机EL显示元件、无机EL元件等的各种电流驱动型发光元件和驱动这些元件的薄膜晶体管等开关元件的显示装置使用。

Claims (9)

1.一种发光显示装置，包括：
薄膜晶体管，设在一衬底上；
像素电极，设在薄膜晶体管上；
第一层间绝缘膜，配置在像素电极和薄膜晶体管之间；
反向电极；以及
发光元件，配置在像素电极和反向电极之间，
其中，所述层间绝缘膜是展平的，
所述像素电极配置在第一层间绝缘膜上，和
该像素电极通过形成于层间绝缘膜中的一个接触孔与所述薄膜晶体管连接。
2.如权利要求1所述的发光显示装置，其特征在于，还包括：
第二层间绝缘膜，设在所述薄膜晶体管的栅极上；并且，
所述像素电极通过该第二层间绝缘膜上形成的电极层之一与所述薄膜晶体管连接，和
所述电极层之一与所述像素电极及所述薄膜晶体管连接。
3.如权利要求1所述的发光显示装置，其特征在于，所述像素电极由ITO形成。
4.如权利要求3所述的发光显示装置，其特征在于，所述像素电极的厚度为1000-2000埃。
5.如权利要求1所述的发光显示装置，其特征在于，所述反向电极包括铝锂层。
6.如权利要求5所述的发光显示装置，其特征在于，所述反向电极的厚度为6000-8000埃。
7.如权利要求1或3所述的发光显示装置，其特征在于，所述薄膜晶体管为p沟道型晶体管。
8.如权利要求2所述的发光显示装置，其特征在于，所述电极层由铝形成。
9.如权利要求2所述的发光显示装置，其特征在于，所述电极层由ITO形成。
CNB031424759A 1997-02-17 1998-02-17 电流驱动型发光显示装置及其制备方法 Expired - Lifetime CN100440569C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP32474/97 1997-02-17
JP3247497 1997-02-17
JP32474/1997 1997-02-17
JP66046/97 1997-03-19
JP6604697 1997-03-19
JP66046/1997 1997-03-19

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB988001462A Division CN1333382C (zh) 1997-02-17 1998-02-17 电流驱动型发光显示装置及其制造方法

Publications (2)

Publication Number Publication Date
CN1625313A true CN1625313A (zh) 2005-06-08
CN100440569C CN100440569C (zh) 2008-12-03

Family

ID=26371058

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB031424759A Expired - Lifetime CN100440569C (zh) 1997-02-17 1998-02-17 电流驱动型发光显示装置及其制备方法
CNB988001462A Expired - Lifetime CN1333382C (zh) 1997-02-17 1998-02-17 电流驱动型发光显示装置及其制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB988001462A Expired - Lifetime CN1333382C (zh) 1997-02-17 1998-02-17 电流驱动型发光显示装置及其制造方法

Country Status (8)

Country Link
US (5) US6462722B1 (zh)
EP (4) EP1619654B1 (zh)
JP (1) JP4893707B2 (zh)
KR (4) KR20040000393A (zh)
CN (2) CN100440569C (zh)
DE (3) DE69838110T2 (zh)
TW (5) TW579039U (zh)
WO (1) WO1998036406A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103489894A (zh) * 2013-10-09 2014-01-01 合肥京东方光电科技有限公司 有源矩阵有机电致发光显示器件、显示装置及其制作方法

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6462722B1 (en) * 1997-02-17 2002-10-08 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
WO1998036407A1 (en) * 1997-02-17 1998-08-20 Seiko Epson Corporation Display device
JP3520396B2 (ja) * 1997-07-02 2004-04-19 セイコーエプソン株式会社 アクティブマトリクス基板と表示装置
JP3580092B2 (ja) * 1997-08-21 2004-10-20 セイコーエプソン株式会社 アクティブマトリクス型表示装置
US6380672B1 (en) * 1997-08-21 2002-04-30 Seiko Epson Corporation Active matrix display device
JP2000163014A (ja) * 1998-11-27 2000-06-16 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置
JP2005209656A (ja) * 1998-12-01 2005-08-04 Sanyo Electric Co Ltd カラーｅｌ表示装置
JP2000227771A (ja) * 1998-12-01 2000-08-15 Sanyo Electric Co Ltd カラーｅｌ表示装置
JP2005166687A (ja) * 1998-12-01 2005-06-23 Sanyo Electric Co Ltd カラーｅｌ表示装置
JP2000227770A (ja) * 1998-12-01 2000-08-15 Sanyo Electric Co Ltd カラーｅｌ表示装置
US6573195B1 (en) * 1999-01-26 2003-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device by performing a heat-treatment in a hydrogen atmosphere
EP2284605A3 (en) 1999-02-23 2017-10-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and fabrication method thereof
JP2000323276A (ja) * 1999-05-14 2000-11-24 Seiko Epson Corp 有機ｅｌ素子の製造方法、有機ｅｌ素子およびインク組成物
US8853696B1 (en) 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US7288420B1 (en) * 1999-06-04 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
JP3904807B2 (ja) * 1999-06-04 2007-04-11 株式会社半導体エネルギー研究所 表示装置
JP4472073B2 (ja) * 1999-09-03 2010-06-02 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP2001102169A (ja) * 1999-10-01 2001-04-13 Sanyo Electric Co Ltd Ｅｌ表示装置
JP2001111053A (ja) * 1999-10-04 2001-04-20 Sanyo Electric Co Ltd 薄膜トランジスタ及び表示装置
TW468283B (en) 1999-10-12 2001-12-11 Semiconductor Energy Lab EL display device and a method of manufacturing the same
US6580094B1 (en) * 1999-10-29 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Electro luminescence display device
JP2001147659A (ja) 1999-11-18 2001-05-29 Sony Corp 表示装置
US6750835B2 (en) 1999-12-27 2004-06-15 Semiconductor Energy Laboratory Co., Ltd. Image display device and driving method thereof
JP4212079B2 (ja) * 2000-01-11 2009-01-21 ローム株式会社 表示装置およびその駆動方法
JP4801260B2 (ja) * 2000-01-17 2011-10-26 株式会社半導体エネルギー研究所 電気器具
TWI252592B (en) 2000-01-17 2006-04-01 Semiconductor Energy Lab EL display device
US6559594B2 (en) * 2000-02-03 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
TW507258B (en) * 2000-02-29 2002-10-21 Semiconductor Systems Corp Display device and method for fabricating the same
JP4150998B2 (ja) * 2000-03-30 2008-09-17 セイコーエプソン株式会社 表示装置
EP1207512A4 (en) * 2000-03-30 2005-10-12 Seiko Epson Corp DISPLAY
GB2360870A (en) * 2000-03-31 2001-10-03 Seiko Epson Corp Driver circuit for organic electroluminescent device
TW512646B (en) * 2000-03-31 2002-12-01 Seiko Epson Corp Organic EL device and production method thereof
TW493282B (en) 2000-04-17 2002-07-01 Semiconductor Energy Lab Self-luminous device and electric machine using the same
US6847341B2 (en) * 2000-04-19 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Electronic device and method of driving the same
TW554637B (en) * 2000-05-12 2003-09-21 Semiconductor Energy Lab Display device and light emitting device
US8610645B2 (en) 2000-05-12 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Display device
US7633471B2 (en) 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
US6995753B2 (en) 2000-06-06 2006-02-07 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
TWI311739B (en) 2000-07-07 2009-07-01 Seiko Epson Corporatio Driver circuit, electro-optical device and electronic apparatus
TWI277056B (en) 2000-07-07 2007-03-21 Seiko Epson Corp Circuit, driver circuit, electro-optical device, organic electroluminescent display device electronic apparatus, method of controlling the current supply to a current driven element, and method for driving a circuit
JP3670941B2 (ja) 2000-07-31 2005-07-13 三洋電機株式会社 アクティブマトリクス型自発光表示装置及びアクティブマトリクス型有機ｅｌ表示装置
JP4772228B2 (ja) * 2000-07-31 2011-09-14 株式会社半導体エネルギー研究所 発光装置の作製方法
US7430025B2 (en) 2000-08-23 2008-09-30 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device
CN100481159C (zh) * 2000-09-29 2009-04-22 三洋电机株式会社 半导体器件以及显示装置
SG114502A1 (en) * 2000-10-24 2005-09-28 Semiconductor Energy Lab Light emitting device and method of driving the same
JP2002200936A (ja) * 2000-11-06 2002-07-16 Semiconductor Energy Lab Co Ltd 表示装置及び車両
KR100652039B1 (ko) * 2000-11-23 2006-11-30 엘지.필립스 엘시디 주식회사 전계발광소자
KR100672628B1 (ko) * 2000-12-29 2007-01-23 엘지.필립스 엘시디 주식회사 액티브 매트릭스 유기 전계발광 디스플레이 장치
US6825496B2 (en) 2001-01-17 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JPWO2002077958A1 (ja) 2001-03-22 2004-07-15 キヤノン株式会社 アクティブマトリクス型発光素子の駆動回路
JP4801278B2 (ja) * 2001-04-23 2011-10-26 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP4982014B2 (ja) * 2001-06-21 2012-07-25 株式会社日立製作所 画像表示装置
JP3951687B2 (ja) 2001-08-02 2007-08-01 セイコーエプソン株式会社 単位回路の制御に使用されるデータ線の駆動
JP4149168B2 (ja) 2001-11-09 2008-09-10 株式会社半導体エネルギー研究所 発光装置
US7148508B2 (en) 2002-03-20 2006-12-12 Seiko Epson Corporation Wiring substrate, electronic device, electro-optical device, and electronic apparatus
US6806497B2 (en) 2002-03-29 2004-10-19 Seiko Epson Corporation Electronic device, method for driving the electronic device, electro-optical device, and electronic equipment
US7579771B2 (en) 2002-04-23 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7786496B2 (en) 2002-04-24 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
JP2003317971A (ja) 2002-04-26 2003-11-07 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
US7897979B2 (en) 2002-06-07 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP3970110B2 (ja) * 2002-06-27 2007-09-05 カシオ計算機株式会社 電流駆動装置及びその駆動方法並びに電流駆動装置を用いた表示装置
JP4216008B2 (ja) 2002-06-27 2009-01-28 株式会社半導体エネルギー研究所 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、ｄｖｄプレーヤー、電子遊技機器、または携帯情報端末
JP2004126523A (ja) * 2002-07-31 2004-04-22 Seiko Epson Corp 電子回路、電気光学装置及び電子機器
US7352133B2 (en) * 2002-08-05 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2004117820A (ja) * 2002-09-26 2004-04-15 Seiko Epson Corp 電子回路、電子装置及び電子機器
JP2004138803A (ja) * 2002-10-17 2004-05-13 Seiko Epson Corp 電子回路、電気光学装置及び電子機器
GB0228269D0 (en) * 2002-12-04 2003-01-08 Koninkl Philips Electronics Nv Active matrix display devices
JP2004198493A (ja) * 2002-12-16 2004-07-15 Seiko Epson Corp 電子回路の駆動方法、電子装置の駆動方法、電気光学装置の駆動方法及び電子機器
JP4373086B2 (ja) * 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 発光装置
JP2004294865A (ja) * 2003-03-27 2004-10-21 Sanyo Electric Co Ltd 表示回路
JP3912313B2 (ja) * 2003-03-31 2007-05-09 セイコーエプソン株式会社 画素回路、電気光学装置および電子機器
US20040222954A1 (en) * 2003-04-07 2004-11-11 Lueder Ernst H. Methods and apparatus for a display
JP2005292503A (ja) * 2004-03-31 2005-10-20 Dainippon Printing Co Ltd 有機ｅｌ表示装置
KR100565674B1 (ko) * 2004-05-21 2006-03-30 엘지전자 주식회사 양방향 유기 ｅｌ 디스플레이 패널 및 그 제조 방법
KR100623691B1 (ko) 2004-06-30 2006-09-19 삼성에스디아이 주식회사 표시장치의 제조방법
EP2299780A3 (en) * 2004-09-13 2011-05-04 Semiconductor Energy Laboratory Co, Ltd. Light emitting layer device
JP4517804B2 (ja) * 2004-09-29 2010-08-04 カシオ計算機株式会社 ディスプレイパネル
EP1650817A1 (en) * 2004-10-20 2006-04-26 Thomson Licensing OLED active matrix display manufactured using a specific shadow mask process
US7612368B2 (en) * 2004-12-29 2009-11-03 E.I. Du Pont De Nemours And Company Organic bottom emission electronic device
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
EP1808844B1 (en) * 2006-01-13 2012-10-31 Semiconductor Energy Laboratory Co., Ltd. Display device
KR100774951B1 (ko) 2006-06-14 2007-11-09 엘지전자 주식회사 전계발광소자
US8988328B2 (en) * 2006-11-30 2015-03-24 Sharp Kabushiki Kaisha Display device configured to supply a driving current in accordance with a signal voltage selected based on a temperature dependency of the driving current and driving method thereof
TW202025500A (zh) 2008-11-07 2020-07-01 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
JP2010122355A (ja) * 2008-11-18 2010-06-03 Canon Inc 表示装置及びカメラ
KR101073565B1 (ko) 2010-02-08 2011-10-17 삼성모바일디스플레이주식회사 유기 발광 표시장치 및 이의 제조방법
US8552440B2 (en) 2010-12-24 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Lighting device
WO2012086662A1 (en) 2010-12-24 2012-06-28 Semiconductor Energy Laboratory Co., Ltd. Lighting device
WO2012090889A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Light-emitting unit, light-emitting device, and lighting device
US9516713B2 (en) 2011-01-25 2016-12-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP5925511B2 (ja) 2011-02-11 2016-05-25 株式会社半導体エネルギー研究所 発光ユニット、発光装置、照明装置
US8772795B2 (en) 2011-02-14 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and lighting device
US8735874B2 (en) 2011-02-14 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, display device, and method for manufacturing the same
KR101335527B1 (ko) * 2012-02-23 2013-12-02 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조 방법

Family Cites Families (117)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4042854A (en) * 1975-11-21 1977-08-16 Westinghouse Electric Corporation Flat panel display device with integral thin film transistor control system
US4087792A (en) * 1977-03-03 1978-05-02 Westinghouse Electric Corp. Electro-optic display system
FR2488016A1 (fr) 1980-07-29 1982-02-05 Thomson Csf Module elementaire pour panneau d'affichage matriciel et panneau d'affichage comportant un tel module
JPS58140781A (ja) 1982-02-17 1983-08-20 株式会社日立製作所 画像表示装置
JPS59119390A (ja) 1982-12-25 1984-07-10 株式会社東芝 薄膜トランジスタ回路
JPS6159474A (ja) 1984-08-31 1986-03-26 株式会社日立製作所 アクティブマトリクスディスプレイ
JPS61255384A (ja) 1985-05-09 1986-11-13 富士通株式会社 薄膜トランジスタマトリツクスとその製造方法
JPS6241193A (ja) 1985-08-15 1987-02-23 清水建設株式会社 クレ−ンブ−ム接近判別方法
JPS62229952A (ja) * 1986-03-31 1987-10-08 Toshiba Corp Ｍｉｓ型半導体集積回路装置
JPS63170682A (ja) 1986-10-03 1988-07-14 セイコーエプソン株式会社 アクテイブマトリクス基板
JP2679036B2 (ja) 1986-12-18 1997-11-19 富士通株式会社 ガス放電パネルの製造方法
JPS6432236A (en) * 1987-07-28 1989-02-02 Seiko Instr & Electronics X driver for matrix panel display
JP2653099B2 (ja) 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
EP0349265A3 (en) 1988-06-27 1990-03-14 EASTMAN KODAK COMPANY (a New Jersey corporation) Electroluminescent devices
JP2568659B2 (ja) 1988-12-12 1997-01-08 松下電器産業株式会社 表示装置の駆動方法
US5095461A (en) * 1988-12-28 1992-03-10 Kabushiki Kaisha Toshiba Erase circuitry for a non-volatile semiconductor memory device
JPH03163529A (ja) * 1989-11-22 1991-07-15 Sharp Corp アクティブマトリクス表示装置
JPH03168617A (ja) 1989-11-28 1991-07-22 Matsushita Electric Ind Co Ltd 表示装置の駆動方法
JP2734464B2 (ja) 1990-02-28 1998-03-30 出光興産株式会社 エレクトロルミネッセンス素子及びその製造方法
JPH03269995A (ja) 1990-03-16 1991-12-02 Ricoh Co Ltd 電界発光素子の作製方法
JP2622183B2 (ja) * 1990-04-05 1997-06-18 シャープ株式会社 アクティブマトリクス表示装置
JP2616153B2 (ja) * 1990-06-20 1997-06-04 富士ゼロックス株式会社 Ｅｌ発光装置
JP3062552B2 (ja) 1990-08-27 2000-07-10 セイコーエプソン株式会社 液晶表示装置及びその検査方法
JP3202219B2 (ja) 1990-09-18 2001-08-27 株式会社東芝 Ｅｌ表示装置
JPH04161984A (ja) 1990-10-26 1992-06-05 Opt Tec Corp 多重グレイレベルを有する大型映像表示ボードシステム
JPH04264527A (ja) 1991-02-20 1992-09-21 Sharp Corp アクティブマトリクス基板
JP2873632B2 (ja) 1991-03-15 1999-03-24 株式会社半導体エネルギー研究所 半導体装置
JPH04311066A (ja) 1991-04-09 1992-11-02 Seiko Epson Corp 半導体装置の製造方法
DE69225105T2 (de) * 1991-10-04 1999-01-07 Toshiba Kawasaki Kk Flüssigkristallanzeigegerät
JPH05107557A (ja) 1991-10-15 1993-04-30 Kyocera Corp 液晶表示装置
JP2784615B2 (ja) 1991-10-16 1998-08-06 株式会社半導体エネルギー研究所 電気光学表示装置およびその駆動方法
US5276380A (en) * 1991-12-30 1994-01-04 Eastman Kodak Company Organic electroluminescent image display device
JPH05210089A (ja) * 1992-01-31 1993-08-20 Sharp Corp アクティブマトリクス表示装置及びその駆動方法
JP2946921B2 (ja) 1992-03-10 1999-09-13 日本電気株式会社 低電力駆動回路
JP2850072B2 (ja) * 1992-05-13 1999-01-27 セイコーインスツルメンツ株式会社 半導体装置
US5302966A (en) * 1992-06-02 1994-04-12 David Sarnoff Research Center, Inc. Active matrix electroluminescent display and method of operation
US5316345A (en) 1992-06-26 1994-05-31 Madison Roberta E Single panel communication card and its color method
JP3328654B2 (ja) 1992-07-15 2002-09-30 昭和電工株式会社 有機薄膜エレクトロルミネッセント素子
GB9215929D0 (en) * 1992-07-27 1992-09-09 Cambridge Display Tech Ltd Electroluminescent devices
JP3343968B2 (ja) * 1992-12-14 2002-11-11 ソニー株式会社 バイポーラ型半導体装置およびその製造方法
JPH06186416A (ja) 1992-12-21 1994-07-08 Toray Ind Inc カラーフィルタとその製造方法
KR0140041B1 (ko) * 1993-02-09 1998-06-15 쯔지 하루오 표시 장치용 전압 발생 회로, 공통 전극 구동 회로, 신호선 구동 회로 및 계조 전압 발생 회로
JPH07120722A (ja) * 1993-06-30 1995-05-12 Sharp Corp 液晶表示素子およびその駆動方法
JP2821347B2 (ja) 1993-10-12 1998-11-05 日本電気株式会社 電流制御型発光素子アレイ
JPH07128639A (ja) * 1993-11-04 1995-05-19 Sharp Corp 表示装置
JP3463362B2 (ja) 1993-12-28 2003-11-05 カシオ計算機株式会社 電界発光素子の製造方法および電界発光素子
JP3488735B2 (ja) * 1994-03-03 2004-01-19 三菱電機株式会社 半導体装置
JPH07249778A (ja) * 1994-03-08 1995-09-26 Sony Corp 表示素子駆動装置およびその製造方法
US5701055A (en) * 1994-03-13 1997-12-23 Pioneer Electronic Corporation Organic electoluminescent display panel and method for manufacturing the same
JP3813217B2 (ja) 1995-03-13 2006-08-23 パイオニア株式会社 有機エレクトロルミネッセンスディスプレイパネルの製造方法
JP2701738B2 (ja) * 1994-05-17 1998-01-21 日本電気株式会社 有機薄膜ｅｌ素子
JP2629601B2 (ja) * 1994-06-02 1997-07-09 日本電気株式会社 半導体装置
JP3312083B2 (ja) * 1994-06-13 2002-08-05 株式会社半導体エネルギー研究所 表示装置
US5508532A (en) * 1994-06-16 1996-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with braded silicon nitride
JPH08241A (ja) 1994-06-20 1996-01-09 Koyo Kikai Seisakusho:Kk 生栗の皮剥ぎ方法
US5525867A (en) 1994-08-05 1996-06-11 Hughes Aircraft Company Electroluminescent display with integrated drive circuitry
US5714968A (en) * 1994-08-09 1998-02-03 Nec Corporation Current-dependent light-emitting element drive circuit for use in active matrix display device
JP2689917B2 (ja) 1994-08-10 1997-12-10 日本電気株式会社 アクティブマトリクス型電流制御型発光素子の駆動回路
JP2689916B2 (ja) * 1994-08-09 1997-12-10 日本電気株式会社 アクティブマトリクス型電流制御型発光素子の駆動回路
US5463279A (en) * 1994-08-19 1995-10-31 Planar Systems, Inc. Active matrix electroluminescent cell design
JP3598583B2 (ja) * 1995-05-30 2004-12-08 株式会社日立製作所 アクティブマトリクス型液晶表示装置
US5587329A (en) 1994-08-24 1996-12-24 David Sarnoff Research Center, Inc. Method for fabricating a switching transistor having a capacitive network proximate a drift region
TW289097B (zh) * 1994-08-24 1996-10-21 Hitachi Ltd
US5818068A (en) * 1994-09-22 1998-10-06 Sharp Kabushiki Kaisha Thin film transistor circuit and an active matrix type display device
JP3467334B2 (ja) 1994-10-31 2003-11-17 Ｔｄｋ株式会社 エレクトロルミネセンス表示装置
JPH08129360A (ja) 1994-10-31 1996-05-21 Tdk Corp エレクトロルミネセンス表示装置
JPH08129358A (ja) 1994-10-31 1996-05-21 Tdk Corp エレクトロルミネセンス表示装置
EP0717445B1 (en) 1994-12-14 2009-06-24 Eastman Kodak Company An electroluminescent device having an organic electroluminescent layer
US5550066A (en) 1994-12-14 1996-08-27 Eastman Kodak Company Method of fabricating a TFT-EL pixel
US5684365A (en) * 1994-12-14 1997-11-04 Eastman Kodak Company TFT-el display panel using organic electroluminescent media
JP3401356B2 (ja) 1995-02-21 2003-04-28 パイオニア株式会社 有機エレクトロルミネッセンスディスプレイパネルとその製造方法
JPH08241057A (ja) * 1995-03-03 1996-09-17 Tdk Corp 画像表示装置
US5693962A (en) * 1995-03-22 1997-12-02 Motorola Full color organic light emitting diode array
US5640067A (en) * 1995-03-24 1997-06-17 Tdk Corporation Thin film transistor, organic electroluminescence display device and manufacturing method of the same
US6853083B1 (en) * 1995-03-24 2005-02-08 Semiconductor Energy Laboratory Co., Ltd. Thin film transfer, organic electroluminescence display device and manufacturing method of the same
JP3636777B2 (ja) 1995-07-04 2005-04-06 Ｔｄｋ株式会社 画像表示装置
JP3744980B2 (ja) * 1995-07-27 2006-02-15 株式会社半導体エネルギー研究所 半導体装置
US5748160A (en) * 1995-08-21 1998-05-05 Mororola, Inc. Active driven LED matrices
JPH0980412A (ja) 1995-09-13 1997-03-28 Canon Inc 液晶表示装置の製造方法
US6268895B1 (en) * 1995-10-27 2001-07-31 Sharp Kabushiki Kaisha Liquid crystal display device having light shield in periphery of display
TW329500B (en) * 1995-11-14 1998-04-11 Handotai Energy Kenkyusho Kk Electro-optical device
JPH09135811A (ja) 1995-11-15 1997-05-27 Nikon Corp 眼科装置
JPH09146119A (ja) 1995-11-27 1997-06-06 Sanyo Electric Co Ltd 液晶表示装置
US6294799B1 (en) * 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
TW309633B (zh) * 1995-12-14 1997-07-01 Handotai Energy Kenkyusho Kk
JP3645378B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH09281525A (ja) * 1996-02-15 1997-10-31 Hitachi Ltd 液晶表示基板およびその製造方法
JP3417514B2 (ja) * 1996-04-09 2003-06-16 株式会社日立製作所 液晶表示装置
JPH09281508A (ja) * 1996-04-12 1997-10-31 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその作製方法
JPH09281476A (ja) * 1996-04-16 1997-10-31 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその作製方法
JP3645667B2 (ja) * 1996-09-03 2005-05-11 株式会社アドバンスト・ディスプレイ 液晶表示装置
US5714838A (en) * 1996-09-20 1998-02-03 International Business Machines Corporation Optically transparent diffusion barrier and top electrode in organic light emitting diode structures
JPH10142633A (ja) * 1996-11-15 1998-05-29 Mitsubishi Electric Corp 薄膜トランジスタ集積装置およびその製造方法並びに液晶表示装置
KR100393039B1 (ko) * 1996-11-20 2003-10-17 삼성에스디아이 주식회사 액정표시소자
JP3899566B2 (ja) 1996-11-25 2007-03-28 セイコーエプソン株式会社 有機ｅｌ表示装置の製造方法
EP0845812B1 (en) * 1996-11-28 2009-10-28 Casio Computer Co., Ltd. Display apparatus
US5949188A (en) * 1996-12-18 1999-09-07 Hage Gmbh & Co. Kg Electroluminescent display device with continuous base electrode
JP3530362B2 (ja) 1996-12-19 2004-05-24 三洋電機株式会社 自発光型画像表示装置
US5990629A (en) * 1997-01-28 1999-11-23 Casio Computer Co., Ltd. Electroluminescent display device and a driving method thereof
US5869929A (en) * 1997-02-04 1999-02-09 Idemitsu Kosan Co., Ltd. Multicolor luminescent device
WO1998036407A1 (en) * 1997-02-17 1998-08-20 Seiko Epson Corporation Display device
US6462722B1 (en) * 1997-02-17 2002-10-08 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
WO1998040871A1 (fr) * 1997-03-12 1998-09-17 Seiko Epson Corporation Circuit pixel, afficheur, et equipement electronique a dispositif photoemetteur commande par courant
JPH10268254A (ja) * 1997-03-26 1998-10-09 Seiko Epson Corp 液晶表示装置
TW424215B (en) * 1997-04-22 2001-03-01 Matsushita Electric Ind Co Ltd Liquid crystal display device with image reading function, the image reading method, and the manufacturing method thereof
JP3520396B2 (ja) * 1997-07-02 2004-04-19 セイコーエプソン株式会社 アクティブマトリクス基板と表示装置
JP3830238B2 (ja) 1997-08-29 2006-10-04 セイコーエプソン株式会社 アクティブマトリクス型装置
US6091934A (en) * 1997-09-02 2000-07-18 Hughes Electronics Corporation Dynamic power allocation system and method for multi-beam satellite amplifiers
TW439387B (en) * 1998-12-01 2001-06-07 Sanyo Electric Co Display device
JP4073107B2 (ja) * 1999-03-18 2008-04-09 三洋電機株式会社 アクティブ型ｅｌ表示装置
TW480727B (en) * 2000-01-11 2002-03-21 Semiconductor Energy Laboratro Semiconductor display device
US6528950B2 (en) * 2000-04-06 2003-03-04 Semiconductor Energy Laboratory Co., Ltd. Electronic device and driving method
JP3695308B2 (ja) * 2000-10-27 2005-09-14 日本電気株式会社 アクティブマトリクス有機ｅｌ表示装置及びその製造方法
WO2002047062A1 (fr) * 2000-12-08 2002-06-13 Matsushita Electric Industrial Co., Ltd. Dispositif d'affichage electroluminescent
JP2004296303A (ja) * 2003-03-27 2004-10-21 Seiko Epson Corp 電気光学装置、その製造方法および電子機器
JP3915806B2 (ja) * 2003-11-11 2007-05-16 セイコーエプソン株式会社 電気光学装置および電子機器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103489894A (zh) * 2013-10-09 2014-01-01 合肥京东方光电科技有限公司 有源矩阵有机电致发光显示器件、显示装置及其制作方法
WO2015051646A1 (zh) * 2013-10-09 2015-04-16 京东方科技集团股份有限公司 有源矩阵有机电致发光显示器件、显示装置及其制作方法
CN103489894B (zh) * 2013-10-09 2016-08-17 合肥京东方光电科技有限公司 有源矩阵有机电致发光显示器件、显示装置及其制作方法

Also Published As

Publication number Publication date
TWM249169U (en) 2004-11-01
US8362489B2 (en) 2013-01-29
DE69838110T2 (de) 2008-04-30
JP2009003468A (ja) 2009-01-08
EP1363265A2 (en) 2003-11-19
TW579039U (en) 2004-03-01
DE69838110D1 (de) 2007-08-30
KR20050101229A (ko) 2005-10-20
JP4893707B2 (ja) 2012-03-07
EP1363265B1 (en) 2012-04-11
US6462722B1 (en) 2002-10-08
US7180483B2 (en) 2007-02-20
EP0917127A4 (en) 2000-11-22
KR20000064937A (ko) 2000-11-06
KR100533449B1 (ko) 2006-02-28
EP0917127B1 (en) 2003-11-12
EP1337131A2 (en) 2003-08-20
KR20040000393A (ko) 2004-01-03
TW200307894A (en) 2003-12-16
TW200308111A (en) 2003-12-16
US20030231273A1 (en) 2003-12-18
KR100614481B1 (ko) 2006-08-22
CN1217806A (zh) 1999-05-26
DE69819662D1 (de) 2003-12-18
KR20050051643A (ko) 2005-06-01
CN100440569C (zh) 2008-12-03
TWI247443B (en) 2006-01-11
EP1363265A3 (en) 2004-08-11
DE69838304D1 (de) 2007-10-04
KR100533455B1 (ko) 2005-12-06
US20090167148A1 (en) 2009-07-02
DE69819662T2 (de) 2004-06-09
EP1619654A1 (en) 2006-01-25
US20090072758A1 (en) 2009-03-19
WO1998036406A1 (en) 1998-08-20
EP0917127A1 (en) 1999-05-19
CN1333382C (zh) 2007-08-22
US20020196206A1 (en) 2002-12-26
TWM301492U (en) 2006-11-21
EP1337131B1 (en) 2007-07-18
DE69838304T2 (de) 2008-05-15
US8188647B2 (en) 2012-05-29
EP1619654B1 (en) 2007-08-22
EP1337131A3 (en) 2004-01-07

Similar Documents

Publication Publication Date Title
CN1625313A (zh) 电流驱动型发光显示装置及其制造方法
CN1279509C (zh) 显示装置
CN1163968C (zh) 半导体器件及其制造方法
CN1267871C (zh) 显示装置
CN1282023C (zh) 在各像素具备辅助电容的有源矩阵型显示装置
CN1088260C (zh) 有源矩阵光电器件
CN1815536A (zh) 显示装置及其驱动方法
CN1697179A (zh) 半导体器件及其制造方法
CN1432984A (zh) 发光器件
CN1399165A (zh) 显示器件
CN1674728A (zh) 有机电致发光器件及其制造方法
CN1750099A (zh) 显示装置及其驱动方法
CN101038930A (zh) 有机场致发光装置及其制造方法、电子设备
CN1677613A (zh) 半导体器件的制造方法、半导体器件、电光装置用基板、电光装置和电子设备
CN1761987A (zh) 显示装置及其驱动方法
CN1574385A (zh) 元件衬底和发光器件
CN1716634A (zh) 半导体器件
CN1268006C (zh) 薄膜晶体管及其制作方法
CN100347862C (zh) 半导体装置及其制造方法
CN1259724C (zh) 基板装置及其制造方法、电光装置以及电子设备
CN1705420A (zh) 有机el显示器及其制作方法
CN1519798A (zh) 电光装置及电子设备
CN101079235A (zh) 电流驱动型发光显示装置及其制造方法
CN1929707A (zh) 发光型显示器
CN1461179A (zh) 电光装置及电子仪器

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: ZHIJI SHIDUN TECHNOLOGY CO., LTD.

Free format text: FORMER OWNER: SEIKO EPSON CORP.

Effective date: 20130812

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20130812

Address after: Delaware, Newcastle, USA

Patentee after: Seiko Epson Corp.

Address before: Tokyo, Japan, Japan

Patentee before: Seiko Epson Corp.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20081203