CN1625812A - 受光或发光用面板及其制造方法 - Google Patents
受光或发光用面板及其制造方法 Download PDFInfo
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- CN1625812A CN1625812A CNA028288599A CN02828859A CN1625812A CN 1625812 A CN1625812 A CN 1625812A CN A028288599 A CNA028288599 A CN A028288599A CN 02828859 A CN02828859 A CN 02828859A CN 1625812 A CN1625812 A CN 1625812A
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Images
Classifications
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/1017—Shape being a sphere
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
Claims (16)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2002/004415 WO2003094248A1 (en) | 2002-05-02 | 2002-05-02 | Light-receiving panel or light-emitting panel, and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1625812A true CN1625812A (zh) | 2005-06-08 |
CN100426530C CN100426530C (zh) | 2008-10-15 |
Family
ID=29287951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028288599A Expired - Fee Related CN100426530C (zh) | 2002-05-02 | 2002-05-02 | 受光或发光用面板及其制造方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7238966B2 (zh) |
EP (1) | EP1511086A4 (zh) |
JP (1) | JP3902210B2 (zh) |
KR (1) | KR100652916B1 (zh) |
CN (1) | CN100426530C (zh) |
AU (1) | AU2002255303B2 (zh) |
CA (1) | CA2483363C (zh) |
TW (1) | TW550830B (zh) |
WO (1) | WO2003094248A1 (zh) |
Cited By (16)
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CN101958355A (zh) * | 2009-07-14 | 2011-01-26 | 霍尼韦尔国际公司 | 薄断面太阳能集中器 |
WO2011023139A1 (en) * | 2009-08-31 | 2011-03-03 | Byd Company Limited | Solar battery assembly |
CN102113125A (zh) * | 2008-08-08 | 2011-06-29 | 京半导体股份有限公司 | 采光型太阳电池模组 |
CN102194906A (zh) * | 2011-04-29 | 2011-09-21 | 浙江吉利汽车研究院有限公司 | 一种太阳能电池板的集成结构 |
CN102334202A (zh) * | 2009-02-27 | 2012-01-25 | 东芝照明技术株式会社 | 发光模块及照明装置 |
CN102569489A (zh) * | 2012-01-20 | 2012-07-11 | 郭磊 | 一种半导体直流变压器 |
CN101507001B (zh) * | 2006-08-07 | 2012-09-19 | 京半导体股份有限公司 | 发电或发光用半导体模块 |
CN103026498A (zh) * | 2010-08-26 | 2013-04-03 | 京半导体股份有限公司 | 附有半导体组件的织网基材及其制造方法与其制造装置 |
CN103178137A (zh) * | 2011-12-22 | 2013-06-26 | 清华大学 | 太阳能电池组 |
CN103178123A (zh) * | 2011-12-22 | 2013-06-26 | 清华大学 | 太阳能电池基座 |
CN103178136A (zh) * | 2011-12-22 | 2013-06-26 | 清华大学 | 太阳能电池组 |
US9209335B2 (en) | 2011-12-09 | 2015-12-08 | Tsinghua University | Solar cell system |
US9349894B2 (en) | 2011-12-29 | 2016-05-24 | Tsinghua University | Solar cell and solar cell system |
US9349890B2 (en) | 2011-12-29 | 2016-05-24 | Tsinghua University | Solar cell and solar cell system |
US9391226B2 (en) | 2011-11-10 | 2016-07-12 | Lei Guo | Semiconductor DC transformer |
US10109757B2 (en) | 2011-12-16 | 2018-10-23 | Tsinghua University | Solar cell system |
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CN1771641A (zh) * | 2003-06-09 | 2006-05-10 | 京半导体股份有限公司 | 发电系统 |
CA2537777C (en) * | 2003-10-24 | 2011-08-02 | Kyosemi Corporation | Light receiving or emitting modular sheet and production method thereof |
JP4780951B2 (ja) * | 2003-11-27 | 2011-09-28 | 京セラ株式会社 | 光電変換装置 |
AU2005322072A1 (en) | 2004-12-27 | 2006-07-06 | Quantum Paper, Inc. | Addressable and printable emissive display |
US8168989B2 (en) | 2005-09-20 | 2012-05-01 | Renesas Electronics Corporation | LED light source and method of manufacturing the same |
CN101473452B (zh) * | 2006-07-04 | 2013-05-08 | 京半导体股份有限公司 | 面板形半导体模块 |
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Also Published As
Publication number | Publication date |
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EP1511086A4 (en) | 2007-02-28 |
US7238966B2 (en) | 2007-07-03 |
AU2002255303B2 (en) | 2006-07-06 |
WO2003094248A1 (en) | 2003-11-13 |
CA2483363A1 (en) | 2003-11-13 |
TW550830B (en) | 2003-09-01 |
CN100426530C (zh) | 2008-10-15 |
CA2483363C (en) | 2009-07-07 |
EP1511086A1 (en) | 2005-03-02 |
JPWO2003094248A1 (ja) | 2005-09-08 |
KR100652916B1 (ko) | 2006-12-01 |
AU2002255303A1 (en) | 2003-11-17 |
US20060043390A1 (en) | 2006-03-02 |
JP3902210B2 (ja) | 2007-04-04 |
KR20050007374A (ko) | 2005-01-17 |
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