CN1666138A - 一种具有光吸收掩模的装置及其加工方法 - Google Patents

一种具有光吸收掩模的装置及其加工方法 Download PDF

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CN1666138A
CN1666138A CN038153254A CN03815325A CN1666138A CN 1666138 A CN1666138 A CN 1666138A CN 038153254 A CN038153254 A CN 038153254A CN 03815325 A CN03815325 A CN 03815325A CN 1666138 A CN1666138 A CN 1666138A
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M·W·迈尔斯
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/02Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/003Light absorbing elements
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    • G02B5/288Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03CPHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00Photographic processes or agents therefor; Regeneration of such processing agents
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007Filters, e.g. additive colour filters; Components for display devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0018Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means for preventing ghost images

Abstract

本发明提供了一种用于加工光学装置的方法,该光学装置包括在透明衬底上形成的至少一个光学元件。该方法包括确定将吸收光的所述衬底的一个区域;和在加工所述至少一个光学元件之前,在所确定的区域上加工一个光吸收掩模。本发明也提供了一种光学装置,其包括衬底(102);以及在所述衬底上形成的第一和第二光学元件,其中所述第一光学元件(104)有两个模式,每个模式对所述第一光学元件上的光入射都产生不同的光响应,且其中所述第二光学元件(108)吸收光,并且先于所述第一光学元件在所述衬底上形成。

Description

一种具有光吸收掩模的装置及其加工方法
技术领域
本发明涉及光学装置。更具体地,本发明涉及微型光学机电装置及其加工方法。
背景技术
如今,很多种类的光学装置例如微机电系统(MEMS)装置,可以利用微机械和微电子加工技术来加工。
例如在某些情况下,MEMS装置可以包括光学元件,从而被特别地称为微光机电系统即“MOEMS”装置。这种MOEMS装置的一个例子就是美国专利5,835,255所描述的干涉测量调制器(IMOD)装置。美国专利5,835,255的IMOD装置可被加工在一个阵列中,而且能用在反射显示装置内,其中每个IMOD作为一个像素来提供期望光响应(desired optical response)。
为了提高期望光响应,应该降低来自IMODS某些非作用区域(inactive area)的反射环境光的影响。因此,就应该将IMODS的这些非作用区域制成吸收光的区域,即,通常需要屏蔽掉光学装置的非作用区域,或者使非作用区域成为吸收光的区域。
发明内容
根据本发明的一个方面,提供了一种对包括至少一个光学元件的装置进行加工的方法,在一个透明衬底上形成所述光学元件,该方法包括确定将吸收光的所述衬底的一个区域;和在加工至少一个光学元件之前,在所确定的区域上加工一个光吸收掩模。
根据本发明的第二方面,提供了一种装置,其包括一个衬底;以及在所述衬底上形成的第一和第二光学元件,其中所述第一光学元件有两种模式,每种模式都对其上入射的光产生不同的光响应,且其中所述第二光学元件吸收所述光,并且先于所述第一光学元件在所述衬底上形成。
根据本发明的第三方面,提供了一种加工装置的方法,该方法包括在一个衬底上形成一个静态光学元件,其中该静态光学元件吸收光;并形成一个邻接于该静态光学元件的动态光学元件,其中该动态光学元件包括一个被驱动状态和一个无驱动状态,每个状态对入射光都有一个特有的光响应。
根据本发明的另一个方面,提供了一种装置,该装置包括一个衬底;所述衬底上的一个静态光学元件,其中该静态光学元件吸收光;以及邻接于该静态光学元件的一个动态光学元件,其中该动态光学元件包括一个被驱动状态和一个无驱动状态,每个状态对入射光都有一个特有的光响应。
附图说明
附图中的图1表示一个根据本发明的、具有已屏蔽非作用区域的显示装置的侧视图。
附图中的图2表示一个根据本发明的一个实施例的MEMS装置的横截面,该装置具有一黑掩模或者光吸收区域。
图3示出了根据本发明的另一实施例的MEMS装置的另一实施例,该装置具有一黑掩模或者光吸收区域。
图4示出了组成图2 MEMS装置的光吸收或黑掩模层的不同的层。
图5A-图5G示出了加工本发明的MEMS装置的各种步骤。
具体实施方式
出于说明的目的,下面的描述将给出很多具体的细节以使人们能够完全理解本发明。然而,显而易见的是,在没有这些具体细节的情况下,本领域的普通技术人员也可以实施本发明。
在说明书中对“一个实施例”或“某个实施例”的引用指的是:所描述的与该实施例相关的一个特定的特征、结构、或特性被包括在本发明的至少一个实施例中。在说明书中不同地方出现的短语“在一个实施例中”不一定都指同一个实施例,也不是相互之间排除其他实施例的单独的或替换的实施例。而且,所描述的各种特征可能被某些实施例呈现,而未被另外的实施例呈现。同样,所描述的各种要求可能是某些实施例所需的,而另外的实施例并不需要。
在一个实施例中,本发明以MOEMS装置的形式公开了一种MEMS装置,该装置包括一个静态光学元件和一个动态光学元件,其中该静态光学元件作为“黑掩模”来吸收环境光或杂散光,从而提高该动态光学元件的光响应。
虽然将使用一种包括IMOD的MEMS装置来描述本发明,但应该明白的是,本发明还涵盖了其他光学装置,例如通常意义上的各种图像显示装置和光电装置,这些装置所具有的非作用区域要求是吸收光的,但这些装置并不包括IMODS。
现参考附图中的图1,示出了装置100的侧视图。应该明白的是,为了不至于掩盖本发明,显示装置100的很多元件都被省略了。显示装置100包括两个作用(active)光学元件,其表现为IMOD装置104的形式,IMOD装置104典型地包括一个反射膜排列,当按箭头106所示的方向朝衬底102驱动该反射膜排列时,该反射膜排列会产生期望光响应。在美国专利5,835,255中已经描述了IMOD装置104的操作,此处通过引用将该专利并入。附图标记108指的是IMOD装置104的非作用区域,这些非作用区域需要成为光吸收区域或者作为“黑掩模”,因此,当观察者从箭头110所示的方向观察显示装置100的时候,由IMOD装置104产生的实际光响应不会被来自非作用区域108的环境光反射降低质量。
每个非作用区域108都可由被选择的具有光响应的材料加工成,其吸收或减弱光。根据本发明的实施例,每个非作用区域108都可以被加工成薄的膜叠层。例如,在一个实施例中,该薄的膜叠层可以包括夹在两个光反射铬层之间的不吸收光的电介质层,下面将会更详细地描述。在其他实施例中,非作用区域108可以包括单一的有机材料层或无机材料层,该层减弱或吸收光。
附图中的图2示出了一种根据本发明的一个实施例的IMOD装置200的横截面。IMOD装置200包括一个作用元件(active component),该作用元件包括铬反射层204、氧化硅层206、气隙208、和在衬底202上制成的机械膜210。机械膜210由聚合物柱212支撑。在使用中,当从箭头214所示的方向观察时,机械膜210就被驱动以接触氧化硅层206从而产生期望光响应。
在其上形成聚合物柱212的每个IMOD 200的区域不是IMOD作用元件的一部分,因此,需要成为吸收光的区域以减少杂散光和环境光对IMOD作用元件的期望光响应造成的干扰。这些非作用区域确定了由圈起来的区域216所表示的静态元件,并被加工形成薄的膜叠层,选择该薄的膜叠层以使其具有光吸收的光学特性。在一个实施例中,本发明包括确定衬底202的哪一部分区域需要成为光吸收的区域,并在形成IMODS的作用光学元件之前,在所确定的区域上加工光吸收掩模或黑掩模。该黑掩模可以包括薄的膜叠层,在一个实施例中,该叠层可以包括铬基部218、氧化物中间层220和铬层204。
现参考附图的图3,附图标记300通常指的是根据本发明一个方面的一种IMOD装置的另一个实施例。IMOD装置300类似于IMOD装置200,因此相同或相似的附图标记表示相同或相似的元件。IMOD 300与IMOD 200之间主要的差别是,整个聚合物柱212由一种有机材料组成,例如可确定光(photo-definable)的黑树脂,例如由Brewer ScienceInc.生产的称为DARC 100的材料,该有机材料有效地作为一种光吸收或黑掩模。IMOD 300的一个优点在于聚合物柱212起到了两种功能。第一,聚合物柱212作为机械膜210的机械支撑。第二,聚合物柱212作为光学掩模来屏蔽掉IMOD的非作用区域或者使其成为光吸收的。
图4是一个示意图,其中示出了各种层,这些层组成了根据本发明的一个实施例的薄膜黑掩模。
参考图4,在衬底400上加工出所示的薄膜黑掩模402。黑掩模402包括具有三层的膜,该膜包括铬层404、氧化硅层406和铝层408。可以选择各种材料来制成黑掩模。在一个实施例中,组成黑掩模的膜和用于加工IMOD作用元件的膜是相同的,因此,可以使用相同的沉积参数来加工非作用元件(inactive component)和作用元件。
现在参考附图的图5A-5G来描述加工薄膜黑掩模402的各个阶段。
参考图5A,在初始的准备步骤中准备玻璃衬底500,例如清洗,在此之后,沉积反射铬层502,例如通过在衬底500上溅涂所述铬层。在一个实施例中,铬层502的厚度可以是大约60埃。
然后,运用常规技术图案化和开发铬层502,留下铬露头,铬露头将作为薄的膜叠层的基层,该薄的膜叠层作为黑掩模(参考图5B)。
然后,典型地大约300-800埃的黑掩模氧化物层(例如SiO2)通过溅涂而沉积。黑掩模氧化物层的厚度取决于所需的黑态(black state)质量。
接着,另一个反射铬层506被溅涂在黑掩模氧化物层504上。铬层506的厚度通常为大约60埃,其精确厚度取决于最终的显示装置所需的亮度,层越薄,亮度越亮。
然后,层508和510分别被溅涂在层506上。层508包括氧化硅,并且大约为300-800埃,然而由于层510是包括钼的牺牲层,其厚度通常为大约0.2-1.2微米。因此,从图5C可以看出,层504-层510形成了衬底502上的厚的膜叠层。
参考图5D,执行图案化步骤和蚀刻步骤形成凹槽512,该凹槽穿过该薄的膜叠层至到铬露头502。
参考图5E,聚合物柱514是通过这样的方式在凹槽512中形成的:在薄的膜叠层上旋转负性光刻胶材料,例如Futurex Inc.公司制造的称为NR7-350P的材料;通过合适的掩模使其曝光并开发形成柱514。这些步骤都是常规的,因此不再赘述。
现在参考图5F,在一个实施例中,包括铝合金的机械膜516通过在钼层510上溅涂而被沉积。
此后,对钼层510进行蚀刻,以留下气隙516,如附图中的图5G所示。
尽管结合特定的示例性实施例对本发明进行了描述,但显然,在不脱离权利要求所述的本发明的较宽的精神的情况下,可以作出各种修改和变化。因此,说明书和附图应被视为解释性的,而非限制性的。

Claims (24)

1.一种用于加工光学装置的方法,该光学装置包括在一个透明衬底上形成的至少一个作用光学元件,所述方法包括:
确定将吸收光的所述衬底的一个区域,其中所述的所确定的区域横向偏离所述至少一个作用光学元件;和
在加工所述至少一个作用光学元件之前,在所述的所确定的区域上加工一个光吸收掩模。
2.根据权利要求1所述的方法,其中所述作用光学元件包括一个像素,所述光吸收区域是邻接所述像素的区域。
3.根据权利要求2所述的方法,其中所述加工包括在所述衬底上沉积一个第一光反射层;在所述第一光反射层上沉积一个不吸收光的电介质层;和在所述不吸收光的电介质层上沉积一个第二光反射层。
4.根据权利要求3所述的方法,其中所述第一和第二光反射层的组成材料是金属。
5.根据权利要求4所述的方法,其中不吸收光的电介质层包括一个氧化物层。
6.根据权利要求2所述的方法,其中所述像素由一种干涉测量调制器确定。
7.根据权利要求1所述的方法,其中所述光吸收掩模包括一种有机材料。
8.根据权利要求7所述的方法,其中所述有机材料包括一种可确定光的黑树脂。
9.一种光学装置,其包括:
一个衬底;和
在所述衬底上形成的第一和第二光学元件,其中所述第一光学元件有两个模式,每个模式对所述第一光学元件上的光入射产生不同的光响应,且其中所述第二光学元件吸收光,并且先于所述第一光学元件在所述衬底上形成。
10.根据权利要求9所述的装置,其中所述第一光学元件包括一个干涉测量调制器。
11.根据权利要求9所述的装置,其中所述第二光学元件围绕所述干涉测量调制器形成。
12.根据权利要求9所述的装置,其中所述第二光学元件包括一种有机材料。
13.根据权利要求9所述的装置,其中第二光学元件包括一个膜叠层。
14.根据权利要求13所述的装置,其中所述膜叠层包括夹在两个铬层之间的不吸收光的电介质材料。
15.一种用于微加工光学装置的方法,该方法包括:
在一个衬底上形成一个静态光学元件,其中所述静态光学元件吸收光;和
形成一个邻接于所述静态光学元件的动态光学元件,其中所述动态光学元件包括一个被驱动状态和一个无驱动状态,每个状态对入射光都有一个特有的光响应。
16.根据权利要求15所述的方法,其中所述动态光学元件包括一个干涉测量调制器。
17.根据权利要求15所述的方法,其中所述静态光学元件包括一个膜叠层。
18.根据权利要求17所述的方法,其中所述膜叠层包括夹在两个铬层之间的不吸收光的电介质材料。
19.根据权利要求15所述的方法,其中所述静态光学元件形成所述动态光学元件部分的机械支撑。
20.一种光学装置,包括:
一个衬底;
在所述衬底上形成的一个静态光学元件,其中所述静态光学元件吸收光;和
邻接所述静态光学元件形成的一个动态光学元件,其中所述动态光学元件包括一个被驱动状态和一个无驱动状态,每个状态对入射光都有一个特有的光响应。
21.根据权利要求20所述的装置,其中所述动态光学元件包括一个干涉测量调制器。
22.根据权利要求19所述的装置,其中所述静态光学元件包括一个膜叠层。
23.根据权利要求22所述的装置,其中所述膜叠层包括夹在两个铬层之间的不吸收光的电介质材料。
24.根据权利要求19所述的装置,其中所述静态光学元件形成所述动态光学元件部分的机械支撑。
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