CN1701387A - 半导体存储器设备 - Google Patents
半导体存储器设备 Download PDFInfo
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- CN1701387A CN1701387A CNA038252554A CN03825255A CN1701387A CN 1701387 A CN1701387 A CN 1701387A CN A038252554 A CNA038252554 A CN A038252554A CN 03825255 A CN03825255 A CN 03825255A CN 1701387 A CN1701387 A CN 1701387A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1042—Read-write modes for single port memories, i.e. having either a random port or a serial port using interleaving techniques, i.e. read-write of one part of the memory while preparing another part
Abstract
Description
Claims (29)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/008278 WO2005004164A1 (ja) | 2003-06-30 | 2003-06-30 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1701387A true CN1701387A (zh) | 2005-11-23 |
CN100485807C CN100485807C (zh) | 2009-05-06 |
Family
ID=33562067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038252554A Expired - Fee Related CN100485807C (zh) | 2003-06-30 | 2003-06-30 | 半导体存储器设备 |
Country Status (4)
Country | Link |
---|---|
US (3) | US7102960B2 (zh) |
JP (1) | JP4511462B2 (zh) |
CN (1) | CN100485807C (zh) |
WO (1) | WO2005004164A1 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101038783B (zh) * | 2006-03-17 | 2010-06-02 | 富士通微电子株式会社 | 半导体存储器、存储器系统和存储器系统的操作方法 |
CN102779101A (zh) * | 2011-05-10 | 2012-11-14 | 瑞萨电子株式会社 | 半导体装置 |
CN104051001A (zh) * | 2013-03-13 | 2014-09-17 | 三星电子株式会社 | 源极线浮置电路、包括其的存储器件和读取其数据的方法 |
CN105719683A (zh) * | 2014-12-19 | 2016-06-29 | 爱思开海力士有限公司 | 存储器件 |
CN106710625A (zh) * | 2015-11-13 | 2017-05-24 | 德克萨斯仪器股份有限公司 | 突发模式读可控sram |
CN110415743A (zh) * | 2018-04-30 | 2019-11-05 | 爱思开海力士有限公司 | 半导体器件 |
CN112382323A (zh) * | 2020-11-12 | 2021-02-19 | 海光信息技术股份有限公司 | 静态随机存储器、处理器及数据读取方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007012173A (ja) * | 2005-06-30 | 2007-01-18 | Toshiba Corp | 半導体記憶装置 |
JP5212100B2 (ja) * | 2006-03-30 | 2013-06-19 | 富士通セミコンダクター株式会社 | 半導体メモリおよびメモリシステム |
KR100837811B1 (ko) * | 2006-11-15 | 2008-06-13 | 주식회사 하이닉스반도체 | 데이터 변환 회로 및 이를 이용한 반도체 메모리 장치 |
US8600779B2 (en) * | 2007-10-09 | 2013-12-03 | Microsoft Corporation | Advertising with an influential participant in a virtual world |
JP2009238323A (ja) * | 2008-03-27 | 2009-10-15 | Fujitsu Microelectronics Ltd | 半導体記憶装置、画像処理システムおよび画像処理方法 |
US8098540B2 (en) * | 2008-06-27 | 2012-01-17 | Qualcomm Incorporated | Dynamic power saving memory architecture |
JP5270605B2 (ja) * | 2010-03-29 | 2013-08-21 | ルネサスエレクトロニクス株式会社 | マイクロコントローラ |
KR101487264B1 (ko) * | 2013-10-15 | 2015-01-28 | (주)피델릭스 | 시리얼 독출 동작의 초기 센싱 오동작을 감소시키는 반도체 메모리 장치 및 그의 시리얼 독출 방법 |
US9418719B2 (en) * | 2013-11-28 | 2016-08-16 | Gsi Technology Israel Ltd. | In-memory computational device |
US9542986B2 (en) * | 2015-05-21 | 2017-01-10 | Arm Limited | Low power input gating |
KR20190014949A (ko) * | 2017-08-04 | 2019-02-13 | 에스케이하이닉스 주식회사 | 반도체장치 |
JP7235389B2 (ja) * | 2019-03-29 | 2023-03-08 | ラピスセミコンダクタ株式会社 | 半導体記憶装置 |
US11386961B2 (en) * | 2019-12-20 | 2022-07-12 | Sandisk Technologies Llc | Centralized fixed rate serializer and deserializer for bad column management in non-volatile memory |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS621182A (ja) * | 1985-06-26 | 1987-01-07 | Hitachi Ltd | 半導体記憶装置 |
JPS6353788A (ja) * | 1986-08-22 | 1988-03-08 | Hitachi Ltd | 半導体記憶装置 |
JPH0612608B2 (ja) * | 1987-02-17 | 1994-02-16 | 株式会社東芝 | 半導体記憶装置 |
JPS6414795A (en) * | 1987-07-08 | 1989-01-18 | Hitachi Ltd | Semiconductor storage device |
JPH0444548Y2 (zh) | 1987-07-15 | 1992-10-20 | ||
JPH02193394A (ja) * | 1989-01-20 | 1990-07-31 | Nec Corp | 半導体メモリ |
JPH02282994A (ja) * | 1989-04-25 | 1990-11-20 | Toshiba Corp | 半導体記憶装置 |
JP2703642B2 (ja) * | 1990-02-28 | 1998-01-26 | 三菱電機株式会社 | 半導体記憶装置 |
JPH0478092A (ja) * | 1990-07-11 | 1992-03-12 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH0482084A (ja) * | 1990-07-24 | 1992-03-16 | Hitachi Ltd | 半導体記憶装置 |
JPH05182455A (ja) * | 1991-12-30 | 1993-07-23 | Sony Corp | メモリ装置 |
JPH06111565A (ja) * | 1992-09-25 | 1994-04-22 | Fujitsu Ltd | ダイナミックram |
JP2894170B2 (ja) * | 1993-08-18 | 1999-05-24 | 日本電気株式会社 | メモリ装置 |
JP3252991B2 (ja) * | 1993-11-22 | 2002-02-04 | 川崎製鉄株式会社 | 連続式圧延機の圧延制御方法 |
US5452261A (en) * | 1994-06-24 | 1995-09-19 | Mosel Vitelic Corporation | Serial address generator for burst memory |
JP3226426B2 (ja) * | 1994-09-27 | 2001-11-05 | 松下電器産業株式会社 | 半導体メモリ及びその使用方法並びに画像プロセッサ |
JPH09106669A (ja) | 1995-08-08 | 1997-04-22 | Hitachi Ltd | シンクロナスdramと半導体記憶装置 |
KR0184464B1 (ko) * | 1995-11-28 | 1999-05-15 | 김광호 | 동기형 반도체 메모리장치의 디코딩 회로 |
JPH10275477A (ja) * | 1997-01-29 | 1998-10-13 | Hitachi Ltd | スタティック型ram |
TW448562B (en) * | 1997-01-29 | 2001-08-01 | Hitachi Ltd | Static random access memory |
JPH117765A (ja) * | 1997-06-17 | 1999-01-12 | Fujitsu Ltd | 半導体記憶装置のワード線選択方法及び半導体記憶装置 |
JPH1083674A (ja) * | 1997-07-23 | 1998-03-31 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP4198271B2 (ja) * | 1998-06-30 | 2008-12-17 | 富士通マイクロエレクトロニクス株式会社 | 半導体記憶装置 |
US6185149B1 (en) * | 1998-06-30 | 2001-02-06 | Fujitsu Limited | Semiconductor integrated circuit memory |
KR100307285B1 (ko) * | 1999-09-02 | 2001-11-01 | 윤종용 | 싱글 데이터 레이트 및 더블 데이터 레이트 스킴을 갖는 버스트-타입의 고속 랜덤 액세스 메모리 장치의 어드레스 발생 및 디코딩 회로 |
JP4253097B2 (ja) * | 1999-12-28 | 2009-04-08 | 東芝マイクロエレクトロニクス株式会社 | 半導体記憶装置及びそのデータ読み出し方法 |
JP2002056685A (ja) * | 2000-08-04 | 2002-02-22 | Matsushita Electric Ind Co Ltd | メモリ回路 |
KR100381957B1 (ko) * | 2001-01-04 | 2003-04-26 | 삼성전자주식회사 | 비휘발성 반도체 메모리 장치 및 그것의 데이터 입/출력제어 방법 |
JP2002279792A (ja) * | 2001-03-22 | 2002-09-27 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置 |
JP4246977B2 (ja) * | 2002-08-29 | 2009-04-02 | 富士通マイクロエレクトロニクス株式会社 | 半導体メモリ |
JP2004348788A (ja) * | 2003-05-20 | 2004-12-09 | Sharp Corp | 半導体記憶装置及び携帯電子機器 |
-
2003
- 2003-06-30 CN CNB038252554A patent/CN100485807C/zh not_active Expired - Fee Related
- 2003-06-30 JP JP2005503368A patent/JP4511462B2/ja not_active Expired - Fee Related
- 2003-06-30 WO PCT/JP2003/008278 patent/WO2005004164A1/ja active Application Filing
-
2005
- 2005-04-26 US US11/114,087 patent/US7102960B2/en not_active Expired - Fee Related
-
2006
- 2006-07-18 US US11/488,024 patent/US7570541B2/en not_active Expired - Fee Related
-
2009
- 2009-04-23 US US12/428,828 patent/US7848176B2/en not_active Expired - Fee Related
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101038783B (zh) * | 2006-03-17 | 2010-06-02 | 富士通微电子株式会社 | 半导体存储器、存储器系统和存储器系统的操作方法 |
CN102779101A (zh) * | 2011-05-10 | 2012-11-14 | 瑞萨电子株式会社 | 半导体装置 |
CN102779101B (zh) * | 2011-05-10 | 2016-11-02 | 瑞萨电子株式会社 | 半导体装置 |
CN104051001A (zh) * | 2013-03-13 | 2014-09-17 | 三星电子株式会社 | 源极线浮置电路、包括其的存储器件和读取其数据的方法 |
CN104051001B (zh) * | 2013-03-13 | 2018-06-22 | 三星电子株式会社 | 源极线浮置电路、包括其的存储器件和读取其数据的方法 |
CN105719683A (zh) * | 2014-12-19 | 2016-06-29 | 爱思开海力士有限公司 | 存储器件 |
CN105719683B (zh) * | 2014-12-19 | 2020-09-22 | 爱思开海力士有限公司 | 存储器件 |
CN106710625A (zh) * | 2015-11-13 | 2017-05-24 | 德克萨斯仪器股份有限公司 | 突发模式读可控sram |
CN106710625B (zh) * | 2015-11-13 | 2022-04-08 | 德克萨斯仪器股份有限公司 | 突发模式读可控sram |
CN110415743A (zh) * | 2018-04-30 | 2019-11-05 | 爱思开海力士有限公司 | 半导体器件 |
CN112382323A (zh) * | 2020-11-12 | 2021-02-19 | 海光信息技术股份有限公司 | 静态随机存储器、处理器及数据读取方法 |
CN112382323B (zh) * | 2020-11-12 | 2024-01-19 | 海光信息技术股份有限公司 | 静态随机存储器、处理器及数据读取方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2005004164A1 (ja) | 2005-01-13 |
US20060256642A1 (en) | 2006-11-16 |
JPWO2005004164A1 (ja) | 2006-08-17 |
US7848176B2 (en) | 2010-12-07 |
US7102960B2 (en) | 2006-09-05 |
CN100485807C (zh) | 2009-05-06 |
US20090207682A1 (en) | 2009-08-20 |
JP4511462B2 (ja) | 2010-07-28 |
US7570541B2 (en) | 2009-08-04 |
US20050185497A1 (en) | 2005-08-25 |
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