CN1755954A - 背孔结构氮化镓基发光二极管的制作方法 - Google Patents

背孔结构氮化镓基发光二极管的制作方法 Download PDF

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CN1755954A
CN1755954A CNA2004100810109A CN200410081010A CN1755954A CN 1755954 A CN1755954 A CN 1755954A CN A2004100810109 A CNA2004100810109 A CN A2004100810109A CN 200410081010 A CN200410081010 A CN 200410081010A CN 1755954 A CN1755954 A CN 1755954A
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electrode
back side
silicon
silicon chip
gallium nitride
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CN100340008C (zh
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马龙
王良臣
王立彬
郭金霞
伊晓燕
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Yangzhou Zhongke semiconductor lighting research and Development Center Co Ltd
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Institute of Semiconductors of CAS
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Abstract

一种背孔结构氮化镓基发光二极管的制作方法，包括：在蓝宝石等绝缘衬底上依次外延生长N型氮化镓层，多量子阱发光有源区和P型氮化镓层；光刻刻蚀到N型氮化镓层内，制备P型欧姆接触电极和N型欧姆接触电极；划片将外延片上的管芯分割成单个管芯；在硅片上双面生成二氧化硅绝缘隔离层，在正面制备金属电极，背面光刻出背孔图形；形成背孔；在硅片正面采用厚胶光刻电镀凸点图形；在硅片背面制备一层低熔点的合金，形成管座；在管座背面直接与管壳热沉相接；将管芯和管座正面通过金属凸点焊接起来，从硅片正面制作的金属电极上引出发光二极管的N电极，从管壳热沉的背面引出发光二极管的P电极。

Description

背孔结构氮化镓基发光二极管的制作方法
技术领域
本发明属于半导体技术领域，一种背孔结构氮化镓基发光二极管的制作方法。
背景技术
随着第三代半导体材料氮化镓的突破以及蓝、绿、白光发光二极管的问世，继半导体技术引发微电子革命之后，又在孕育一场新的产业革命——照明革命，其标志是半导体灯将逐步替代白炽灯和荧光灯。半导体灯采用发光二极管(LED)作为新光源，同样亮度下，耗电仅为普通白炽灯的1/10，而寿命却可以延长100倍。由于半导体照明(亦称固态照明)具有节能、长寿命、免维护、环保等优点，在大屏幕显示、交通信号灯以及通用和特种照明领域具有巨大的应用市场。业内普遍认为，如同晶体管替代电子管一样，半导体灯替代传统的白炽灯和荧光灯，也是大势所趋。世界三大照明工业巨头通用电气、飞利浦、奥斯拉姆集团纷纷与半导体公司合作，成立半导体照明企业，并提出要在2010年前，使半导体灯发光效率再提高8倍，价格降低100倍。一场抢占半导体照明新兴产业制高点的争夺战，已经在全球打响。美国能源部预测，到2010年前后，美国将有55％的白炽灯和荧光灯被半导体灯替代，每年可节电350亿美元。日本提出，2006年就要用半导体灯大规模替代传统白炽灯。据测算，7年后仅在美国，半导体照明就可能形成一个500亿美元的大产业。
倒装结构与传统的正装结构相比，可以增加光的输入，提高发光强度，改善散热，增大工作电流。现在一般采用的倒装焊技术制作氮化镓基发光二极管的方法是在硅片上淀积导热性能差的绝缘氧化硅，在氧化硅上制备金属电极，电镀凸点，与管芯倒装焊连接。这种结构有源区产生的热量要经过热的不良导体氧化硅，然后通过下面的硅片传递到热沉上，最后通过导热胶与热沉粘接。此方法虽然在一定程度上解决了散热的问题，但其热阻仍然很大，形成阻碍未来应用于通用照明的大功率型发光二极管实现的一个瓶颈。
发明内容
本发明的目的在于，提供一种背孔结构氮化镓基发光二极管的制作方法，其可通过硅基微电子工艺中背孔技术的引入，在导热通路中首先去除了氧化硅绝缘层，然后又以导热率约为硅三倍的金属铜代替硅，使发光管芯片有源区产生的热量经过热的优良金属导体直接与热沉相连，整个散热通路不经过热的不良导体，最大程度上降低了热阻，实现了所谓的零亚热阻散热。不仅使发光管可以在更大的电流下工作，而且大大增加了器件长时间下连续工作的能力，提高了器件的性能和可靠性，有利于照明用功率型发光二极管的实现。
本发明一种背孔结构氮化镓基发光二极管的制作方法，其特征在于，包括如下步骤：
步骤1：在蓝宝石等绝缘衬底上利用金属化学有机气相沉积方法依次外延生长N型氮化镓层，多量子阱发光有源区和P型氮化镓层；
步骤2：根据设计的芯片图形光刻刻蚀到N型氮化镓层内，在P型氮化镓层上和N型氮化镓层上分别制备P型欧姆接触电极和N型欧姆接触电极；
步骤3：将蓝宝石衬底从背面用研磨的方法或离子减薄技术减薄；
步骤4：划片将外延片上的管芯分割成单个管芯；
步骤5：在硅片上采用热氧化的方法双面生成二氧化硅绝缘隔离层，在正面采用蒸发或溅射的方法制备金属电极，背面光刻出背孔图形，腐蚀氧化硅；
步骤6：采用ICP干法或KOH硅的各向异性腐蚀液从背面刻蚀或腐蚀硅片，直至露出正面的二氧化硅绝缘隔离层为止；使用HF氧化硅腐蚀液继续腐蚀，直至腐蚀出金属电极为止，形成背孔；
步骤7：在背孔中电镀高热导率金属铜直到与背面的硅表面平齐为止；
步骤8：在硅片正面光刻出与管芯的N电极相连接的电极；
步骤9：在硅片正面采用厚胶光刻电镀凸点图形，选择性电镀与管芯的P型欧姆接触电极和N型欧姆接触电极相连接的金属凸点；
步骤10：在硅片背面制备一层低熔点的合金，形成管座；
步骤11：在管座背面通过加热合金直接与管壳热沉相接；
步骤12：利用倒装焊机将管芯和管座正面通过金属凸点焊接起来，从硅片正面制作的金属电极上引出发光二极管的N电极，从管壳热沉的背面引出发光二极管的P电极。
其中所述的减薄是80um到120um之间。
其中所述的背孔的数目是一个或一个以上；背孔内填充的金属为铜。
其中所述的金属电极是铝、铬、镍、金、钛。
其中所述的管芯为1mm×1mm。
附图说明
为了进一步说明本发明的内容，以下结合实施例对本发明做一详细的描述，其中：
图1是本发明中的氮化镓基发光二极管管芯结构的剖面图；
图2是本发明的背孔制备前管座的剖面图；
图3是本发明的背孔制备后管座的剖面图；
图4是本发明的最终的背孔结构氮化镓基发光二极管剖面图。
具体实施方式
请参阅图1、图2、图3及图4，本发明一种背孔结构氮化镓基发光二极管的制作方法，包括如下步骤：
步骤1：在蓝宝石等绝缘衬底10上利用金属化学有机气相沉积方法依次外延生长N型氮化镓层11，多量子阱发光有源区12和P型氮化镓层13(图1中)；
步骤2：根据设计的芯片图形光刻刻蚀到N型氮化镓层11内，在P型氮化镓层13上和N型氮化镓层11上分别制备P型欧姆接触电极14和N型欧姆接触电极15(图1中)；
步骤3：将蓝宝石衬底10从背面用研磨的方法或离子减薄技术减薄，所述的减薄是80um到120um之间；
步骤4：划片将外延片上的管芯分割成单个管芯；所述的管芯为1mm×1mm；
步骤5：在硅片20上采用热氧化的方法双面生成二氧化硅绝缘隔离层21，在正面采用蒸发或溅射的方法制备金属电极22，背面光刻出背孔图形，腐蚀氧化硅；所述的金属电极22是铝、铬、镍、金、钛(图2中)；
步骤6：采用ICP干法或KOH硅的各向异性腐蚀液从背面刻蚀或腐蚀硅片，直至露出正面的二氧化硅绝缘隔离层21为止；使用HF氧化硅腐蚀液继续腐蚀，直至腐蚀出金属电极22为止，形成背孔，所述的背孔的数目是一个或一个以上；背孔内填充的金属为铜；
步骤7：在背孔中电镀高热导率金属铜24直到与背面的硅表面平齐为止；
步骤8：在硅片20正面光刻出与管芯的N电极15相连接的电极22(图2中)；
步骤9：在硅片20正面采用厚胶光刻电镀凸点图形，选择性电镀与管芯的P型欧姆接触电极14和N型欧姆接触电极15相连接的金属凸点25和26(图3中)；
步骤10：在硅片20背面制备一层低熔点的合金23，形成管座(图3中)；
步骤11：在管座背面通过加热合金23直接与管壳热沉27相接(图4中)；
步骤12：利用倒装焊机将管芯和管座正面通过金属凸点25、26焊接起来，从硅片20正面制作的金属电极22上引出发光二极管的N电极，从管壳热沉27的背面引出发光二极管的P电极(图4中)。
实施例
首先如图1所示，这是氮化镓基发光二极管管芯结构的剖面图，其制作过程过程是，在蓝宝石衬底10上利用MOCVD方法外延生长GaN N型接触层11，发光有源区12和P型GaN接触层13；管芯的形状设计成正方形，尺寸为1mm×1mm，然后根据设计的管芯图形光刻并采用ICP系统干法刻蚀出N型的台面(N型接触层11)。在P型GaN接触层13上采用电子束蒸发(或溅射)的方法制备Ni/Au/Ag/Ni/Au(50/50/1500/200/1200)，在500摄氏度退火5分钟，形成具有低欧姆接触同时高反射率的P型GaN的欧姆接触电极14。在N型GaN层11上采用电子束蒸发(或溅射)的方法制备Ti/Al/Ni/Au(150/2200/400/500)，在900摄氏度退火30秒，形成低欧姆接触的N型GaN欧姆接触电极15。将蓝宝石衬底从背面用研磨的方法减薄到80-120um，利用激光划片技术沿设计好的管芯的分割道将外延片上的管芯分割成1mm×1mm的单个管芯。
图2和图3是背孔制备前后管座的剖面图。如图2所示，首先将硅片20研磨至150um以下，双面抛光，然后采用热氧化的方法双面生长0.8微米的二氧化硅绝缘层21，在正面上采用电子束蒸发(或溅射)的方法制备Cr/Au(500/4000)电极22。在背面光刻出背孔图形，腐蚀氧化硅。如图3所示，使用ICP系统干法(或采用KOH等硅的各向异性腐蚀液)从背面刻蚀(腐蚀)硅片20，直至露出正面的氧化硅21为止。使用HF等氧化硅腐蚀液继续腐蚀，直到腐蚀到正面的金属电极22为止。在硅背孔中电镀制备热的良导体铜24直到与背面的硅表面平齐为止。在硅片20正面光刻腐蚀出与管芯的N电极相连接的电极22。在硅片20正面采用厚胶光刻出电镀用凸点图形，同时选择性电镀制备与管芯P电极相连接的金属凸点25和与管芯N电极相连接的金属凸点26。最后采用湿法腐蚀去掉背面残留的氧化硅并在硅片的背面采用蒸发(或溅射)的方法制备低熔点的Au/Sn合金23，形成管座。
如图4所示，将已经分割好的单个管芯与管座通过倒装焊设备对准，通过加热凸点回流焊接到一起，从硅片正面的金属电极22上采用超声压焊的方法引出金丝作为整个发光二极管的N电极。管座通过加热合金23直接与管壳热沉27相连，从管壳热沉27背面引出整个发光二极管的P电极。至此完成了一个具有完整结构、性能良好的背孔结构氮化镓基发光二极管。
本发明提出了一种背孔结构氮化镓基发光二极管的制作方法，使整个散热通路全部为热的优良金属导体，这种新方法在最大程度上降低了热阻，实现了所谓的亚零热阻散热，同时与普通的倒装结构发光二极管制作工艺完全兼容。与传统的结构的发光二极管相比，优化了器件的散热结构，使发光管可以在更大的电流下长时间连续正常工作，提高了发光二极管的性能和可靠性，有利于照明用功率型发光二极管的实现。

Claims (5)

1、一种背孔结构氮化镓基发光二极管的制作方法，其特征在于，包括如下步骤：
步骤1：在蓝宝石等绝缘衬底上利用金属化学有机气相沉积方法依次外延生长N型氮化镓层，多量子阱发光有源区和P型氮化镓层；
步骤2：根据设计的芯片图形光刻刻蚀到N型氮化镓层内，在P型氮化镓层上和N型氮化镓层上分别制备P型欧姆接触电极和N型欧姆接触电极；
步骤3：将蓝宝石衬底从背面用研磨的方法或离子减薄技术减薄；
步骤4：划片将外延片上的管芯分割成单个管芯；
步骤5：在硅片上采用热氧化的方法双面生成二氧化硅绝缘隔离层，在正面采用蒸发或溅射的方法制备金属电极，背面光刻出背孔图形，腐蚀氧化硅；
步骤6：采用ICP干法或KOH硅的各向异性腐蚀液从背面刻蚀或腐蚀硅片，直至露出正面的二氧化硅绝缘隔离层为止；使用HF氧化硅腐蚀液继续腐蚀，直至腐蚀出金属电极为止，形成背孔；
步骤7：在背孔中电镀高热导率金属铜直到与背面的硅表面平齐为止；
步骤8：在硅片正面光刻出与管芯的N电极相连接的电极；
步骤9：在硅片正面采用厚胶光刻电镀凸点图形，选择性电镀与管芯的P型欧姆接触电极和N型欧姆接触电极相连接的金属凸点；
步骤10：在硅片背面制备一层低熔点的合金，形成管座；
步骤11：在管座背面通过加热合金直接与管壳热沉相接；
步骤12：利用倒装焊机将管芯和管座正面通过金属凸点焊接起来，从硅片正面制作的金属电极上引出发光二极管的N电极，从管壳热沉的背面引出发光二极管的P电极。
2、根据权利要求1所述的一种背孔结构氮化镓基发光二极管的制作方法，其特征在于，其中所述的减薄是80um到120um之间。
3、根据权利要求1所述的一种背孔结构氮化镓基发光二极管的制作方法，其特征在于，其中所述的背孔的数目是一个或一个以上；背孔内填充的金属为铜。
4、根据权利要求1所述的一种背孔结构氮化镓基发光二极管的制作方法，其特征在于，其中所述的金属电极是铝、铬、镍、金、钛。
5、根据权利要求1所述的一种背孔结构氮化镓基发光二极管的制作方法，其特征在于，其中所述的管芯为1mm×1mm。
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