CN1768434A - 发光二极管功率封装 - Google Patents
发光二极管功率封装 Download PDFInfo
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- CN1768434A CN1768434A CNA2004800085521A CN200480008552A CN1768434A CN 1768434 A CN1768434 A CN 1768434A CN A2004800085521 A CNA2004800085521 A CN A2004800085521A CN 200480008552 A CN200480008552 A CN 200480008552A CN 1768434 A CN1768434 A CN 1768434A
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Abstract
一种表面安装发光二极管(LED)封装,每一个均包括发光二极管(LED)模片(24)。在电绝缘下支架晶圆(10)上钻有开孔的阵列。将金属施加到钻成的开孔中以产生多个通道阵列(12)。LED模片(24)覆晶封装结合到下支架晶圆(10)的前侧(16)。各个覆晶封装结合的LED(24)的p型和n型触点通过通道阵列(12)与下支架晶圆(10)的可软焊的后侧(18)电连接。还设置有导热路径(10,12),用于将热量从覆晶封装结合的LED模片(24)传导到下支架晶圆(10)的可软焊的后侧(18)。在覆晶封装结合之后,分离下支架晶圆(10)以制造表面安装LED封装。
Description
技术领域
本发明涉及照明技术。特别是适用于高亮度氮化镓(GaN)基的发光二极管(LED)和发光二极管阵列的制造,本发明将特别参照其进行描述。然而,发明还可与其它类型的发光二极管和其它发光二极管的应用相结合。
背景技术
发光二极管,特别是由氮化镓、氮化铝、氮化铟、和各种合金及其结合的层制造的发光二极管适用于紫外和蓝光波长范围内的照明应用。另外,涂有波长转换磷的氮化镓基的二极管适用于产生用于照明的白色或者可选择颜色的光。这种二极管与其他类型的照明装置相比具有多种优点,包括结构紧凑、低操作电压、和高可靠性。
然而,用于照明应用的氮化镓基的功率二极管具有很低的光通量(luminous output)。处于现有技术水平的氮化镓基的LED产生大约100流明的光输出将消耗5瓦特。与之相对比地,传统的白炽光源产生大约1000流明的光输出将消耗60瓦特。在光通量和功率二极管的可靠性方面热量散失是一个限制性因素。尽管设有散热片以从二极管发光基的发光系统中去除热量,但是仍然需要从二极管模片的作用区域将提高的热量散至散热片。
在传统的氮化镓基的LED封装中,起作用的氮化镓层在覆晶封装定向中设置于蓝宝石或其他透明的基底上,其中,起作用的氮化镓层与硅或者其它的导热下支架(sub-mount)相结合,其中该下支架依次支撑在导线架或者印刷电路板。硅的下支架是绝缘的,并且包括在覆晶封装结合过程与LED模片(die,芯片,裸片)的电极相连接的结合垫。该硅的下支架的结合垫与导线架或者印刷电路板的走线通过引线接合而电连接。由氮化镓层发射的光通过透明的LED基底发射,此时由氮化镓层产生的热量从硅下支架传导到与导线架或者印刷电路板相集成或相结合的散热片上。
传统的氮化镓基LED存在多种缺点。由于将氮化镓层与下支架相接合、将下支架与相关的支架相接合、以及结合垫与导线架的引线接合这些分开的步骤使得封装比较复杂。该封装与电子工业的其他领域通常采用的晶圆级处理相冲突,从而影响了生产率和产量。尽管一些晶圆级处理可在切片之前在外延GaN晶圆上处理,但是,诸如晶圆封装的一些特定处理不能够在切片之前进行。通过使用硅的下支架而改善的热传导仍然不理想。整个封装的体积比较庞大。
本发明旨在提供一种改进的装置和方法以能够克服上述或者其他缺陷。
发明内容
根据本发明的一个方面,提供了一种用于生产多个表面安装发光二极管(LED)封装的方法。多个发光二极管(LED)模片被制造。每一个LED模片都包括位于透光基底上的发光半导体层,以及前侧的p型和n型触点,其位于与透光基底相对的半导体层上。在电绝缘下支架晶圆上钻有多个开孔的阵列。在所钻成的开孔上设有金属以产生多个通道阵列(via array)。LED模片覆晶封装结合到下支架晶圆的前侧。各个覆晶封装结合的LED的p型和n型触点通过通道阵列下支架晶圆的可软焊的后侧电连接。设置有导热路径以用于从覆晶封装结合的LED模片将热量传导至下支架晶圆的可软焊的后侧。在覆晶封装结合之后,下支架晶圆被分离以用于制造表面安装LED封装,其每一个包括至少一个LED模片。
根据本发明的另一个方面,公开了一种发光二极管(LED)封装。该LED具有第一侧,其上设置有一对电触点;以及第二侧。下支架具有第一侧,LED的第一侧结合到其上;以及第二侧。该下支架包括:多个导电路径,其从下支架的第二侧延伸到下支架的第一例,所述导电路径与LED的电触点相连接,从而使得电能可从下支架的第二侧输送到LED;以及一个或多个导热路径,从下支架的第一侧延伸到下支架的第二侧,从而使得由LED产生的热量从下支架的第二侧被去除。
根据本发明的再一个方面,公开了一种发光二极管(LED)封装。该LED包括位于其表面的电触点。电绝缘下支架包括:(i)前侧,包括与LED电触点相连接的印刷电路;(ii)后侧,包括电接触垫;(iii)导电路径,通过绝缘下支架,且将前侧的印刷电路与后侧的电接触垫连接起来从而将电能从下支架接触垫的后侧输送到LED。
根据本发明的又一个方面,提供了一种用于制造多个发光二极管(LED)封装的方法。多个发光二极管覆晶封装结合于电绝缘下支架晶圆的前侧。下支架晶圆包括:前侧触点,在覆晶封装结合过程中其与LED的电极电接触;以及导电路径,将前侧触点与位于下支架晶圆的后侧的可软焊的接触垫电连接。至少一个晶圆级处理操作在下支架晶圆与LED覆晶封装结合时进行。下支架晶圆被分离从而制造多个LED封装。每一个LED封装都至少包括多个LED中的至少一个。
本发明的其它优点和益处对于本领域的技术人员来说在通过阅读和理解以下的详细描述之后将会显而易见。
附图说明
本发明可包括不同的组件和组件的排列,以及不同的步骤和步骤的排列。附图只是用于解释优选实施例,而并不用于限制本发明。另外,可以理解地,LED的附图未按比例绘制。
图1A是下支架晶圆的前视图,包括多个电通道的阵列,而虚线则表示用于各个单独的LED封装的分离面。
图1B是图1A所示的下支架晶圆的后视图,其包括可软焊的触点垫,而虚线表示用于各个单独的LED封装的分离面。
图1C是电通道阵列的前视图,而虚线表示用于各个单独的LED封装的分离面。
图1D是LED模片的后视图(透过透明基底所看到的),其与图1C中所示的通道阵列覆晶封装结合,而图中的虚线示出了LED模片的前侧的电极。
图1E是图1D所示类型的两个LED模片的侧视图,其与图1C所示类型的两个通道阵列通过覆晶封装相结合。
图2是示出了用于制造LED模片和其内形成有通道阵列的下支架晶圆的合适的处理流程图。
图3是LED封装的侧视图,其包括设计作为导热通道的通道的第三分阵列。
图4示出了根据图2中所示的处理流程制造的LED模片和下支架晶圆相结合从而生产独立的LED封装的适合的方法。
图5示出了覆晶封装结合到两个通道阵列的两个LED模片的侧视图,其中以分步重复的方式将模制材料施加到各个LED模片上。
图6示出了覆晶封装结合到两个通道阵列的两个LED模片的侧视图,其中以分步重复的方式将未充满(underfill)材料施加到各个LED模片上。
图7示出了覆晶封装结合到通道阵列的LED模片的侧视图,其中以晶圆级处理将优选的涂层施加到LED模片上,以及与LED覆晶封装结合的下支架晶圆上。
图8示出了覆晶封装结合到通道阵列的LED模片的侧视图,其中使用晶圆级处理在LED模片基底上蚀刻轮廓反射表面,以及处理与LED覆晶封装结合的下支架晶圆。
图9示出了覆晶封装结合到LED模片的侧部区域的外侧设置的通道阵列上的LED模片的侧视图,其中在将各个LED封装分离之前在晶圆级处理中施加模片封装环氧树脂。
图10示出了覆晶封装结合到LED模片的侧部区域的外侧设置的通道阵列上的LED模片的侧视图,其中通过经由通道阵列切割分离LED封装而制造导电侧壁,并且在将各个LED封装分离之前在晶圆级处理中施加模片封装环氧树脂。
图11示出了覆晶封装结合到LED模片的侧部区域的外侧设置的通道阵列上的LED模片的侧视图。在传送模制透镜的分布重复结合之后,在晶圆级处理中施加模片封装环氧树脂,并且沿着“V”型槽分离LED封装。
图12示出了覆晶封装结合到通道阵列的LED模片的侧视图,其中空穴(cavity)晶圆结合到下支架晶圆上。空穴晶圆结合到下支架晶圆上从而在其中形成接收LED模片的反射空穴,每一个空穴都以分步重复的方式填充有密封剂。
图13示出了图12中所示的空穴晶圆的前视图,在与下支架晶圆结合之前在其内形成空穴。
图14示出了根据图2中所示的处理方法用于制造图12和图13中所示的空穴晶圆的方法,以及将空穴晶圆与LED模片相结合的方法,从而制造单独的LED封装。
具体实施方式
参照图1A到图1E,利用共同的下支架晶圆10制造多个的表面安装发光二极管(LED)封装,其中下支架晶圆包括从下支架晶圆10的前侧16到下支架晶圆10的后侧18的导电通道14的阵列12。
每一个LED模片24都包括透光基底32,在其上沉积有p型和n型半导体层34,以形成p/n发光二极管结构,当施加有电压时其便发光。金属的、聚合的、或者其它类型的p型和n型电极40形成于半导体层34上用于电激发LED模片24。在一个优选实施例中,LED模片24是氮化镓基的LED,其中半导体层34是氮化铝、氮化镓、氮化铟、及其合金的多层堆叠,它们沉积到透光的蓝宝石或SiC的基底上。尽管示出了两个半导体层34,但是可以想到可使用更复杂的或者是n型在p型上,或者p型在n型上的半导体多层堆叠。例如,多层堆叠可以包括氮化铝或者氮化镓铝外延缓冲物,光学镀层,氮化铟、或氮化镓铟量子阱,或其类似。此外,半导体层34也可以不是氮层,且基底34可以是其它的材料制成,如发光二极管模片包括在很宽的带隙范围内的磷基的半导体层,和透光半导体基底。
LED模片24与下支架晶圆10的前侧16利用覆晶封装结合在一起,并与通道阵列12电接触。特别地,每一个LED模片24的电极40与位于传导通道14的前侧端部或与通道14电连接的印刷电路50上的结合凸块44通过热超声焊相结合。传导通道14的后端与可软焊的接触垫46电连接,该接触垫适合于将LED封装焊接到印刷电路板上或者其它的支架上作为表面安装的LED封装。施加到接触垫46上的电能通过通道14和结合凸块44传导到LED模片24的电极40上。
在LED模片24覆晶封装结合之后,下支架晶圆10优选沿着分离面48(如图1A,图1B和图1C中的虚线所示)分离,从而形成单独的表面安装LED封装,且每一个都包括覆晶封装结合的LED模片24和通道阵列12。
可选择地,多于一个的LED模片24可包括在各个独立的LED封装中。例如,图1E中有两个LED模片24包括在一个单一的封装中。在这种情况下,电连接的印刷电路50能被堆积在下支架晶圆10的前侧16。(需注意的是,印刷电路50在图1A和图1C中被省略)。可选择地,印刷电路50可被省略,且多重的LED模片封装的每一个通道阵列12的接触垫46的后侧都是独立地电连接以用于激发多个LED模片。
继续参照图1A到图1E,并且另外参照图2所示,用于制造LED模片24的适合的方法60包括:将LED装置半导体层在透光基底晶圆32上沉积62。对于GaN基的LED模片的制造,沉积62可利用金属有机化学蒸汽沉积法(MOCVD)、分子束外延法(MBE)、或者另外的外延沉积技术来适当地进行。利用光刻、湿法化学蚀刻、等离子蚀刻或者类似的方法进行晶圆级处理64的操作,以用于限定装置的台式晶体管,露出埋入的半导体层等。与金属化区域的平板印刷限定相接合而进行的晶圆级金属化66用于形成电极40。在一个优选实施例中,电极40主要是金,其可选择地放置在钛粘结层上和/或镍扩散阻挡层上。晶圆被分成模片68从而分离成单独的LED模片24。
继续参照图1A到图2,用于制造下支架晶圆10的合适的方法80包括:使得通道阵列12起始于适合的电绝缘晶圆82。电绝缘下支架材料可以在陶瓷,如铝土、BeO(氧化铍)、AIN(氮化铝)等类似的材料,或者复合材料,如AISiO(碳化硅铝),填充石墨的聚合物或类似的材料中选取。通道14的开孔是机械钻的84,如利用激光钻孔、利用光刻湿化学蚀刻或类似的方法进行。通过将导电材料,优选为铜填充开孔而形成通道86。填充过程可以利用掩蔽电镀术或其它的高速沉积法,或者利用程序化的分步重复注射喷嘴来进行。适合的通道材料包括金属,如银、铜、金、铝、铂、钯、钨、及其合金或者类似的材料。可选择地,代替充满开孔,可将通道材料利用电镀或者其它的方法沉积到开孔的侧壁上。
在金属化(metallization)过程88、90中,可软焊的后接触垫46以及可选择的前侧印刷电路50都是光刻限定和施加的。由于晶圆82是电绝缘的,因此这些金属化可直接沉积到晶圆82上。可选择地,硅镍或其它的绝缘层首先被沉积到晶圆82上从而提供进一步的电隔离。
结合凸块44在导电通道14的前侧端部或者在印刷电路50上形成92。在一个实施例中,采用焊接凸块。然而,用于覆晶封装结合的传统的焊料具有导热性,其导热率为25-60W/mk,凸块高度大于1mil(25微米)。较大的高度和相对较低的导热率在通过焊接凸块时限制了热量散失。
因此,在一个优选实施例中,结合凸块44主要使用铜,并采用热超声覆晶封装焊而制成。典型的铜导热率大约为400W/mk,且铜的凸块高度可以达到小于0.5mil(13微米)。与焊接凸块相比,增加的导热率且减小的凸块高度会降低热阻。然而,通常在增大结合凸块高度可提高可靠性,以及减小结合凸块高度可降低凸块的热阻之间进行权衡。在一个优选实施例中,使用了大约为1mil(25微米)的铜的凸块。在示出的实施例中,结合凸块44形成于印刷电路50上。然而可替代地,用于热连接的结合凸块可形成在发光二极管上。
在一个形成结合凸块44的适合的方法中,通道14的前侧端部或者印刷电路50(其上形成有结合凸块)终止于较薄的钛层。为了制备该表面,该终止的钛层在凸块形成92之前部分地或者全部地被蚀刻。较薄的籽晶层,如20纳米厚的钛/150纳米厚的铜被沉积,并且铜凸块的定位是由光刻所限定的。铜凸块被电镀到籽晶层的外露区域。去除光刻掩模,并且将较薄的籽晶层蚀刻掉。
铜凸块优选平版印刷涂覆有金从而提高热超声焊。可选择地,在施加金涂层之前将钛层沉积到铜凸块上从而提高金的粘附。在结合凸块44与发光二极管24的电极40的相应的金表面相接触时,通过加热基底10到大约150℃,形成结合凸块44和电极40之间的热超声金对金焊接。通过超声波能量的应用形成热超声焊。有利地,热超声焊在大约150℃形成,但是提供的模片连接的其后的热稳定性可以达到600℃。
图1A到图1E的下支架10的通道阵列12的每一个都包括导电通道14的第一通道分阵列121,其接触第一(p型和n型)电极40;以及导电通道14的第二通道分阵列122,其接触第二(p型和n型)电极40。在通过分阵列121,122的导电通道14时发生热量散失。通道14在每一个分阵列121,122中都是立体分布的,从而对连接的LED模片24提供均匀的热量散失。可选择地或另外地,如果下支架10是由导热材料制造的,则可通过下支架10进行散热。例如,AIN(氮化铝)可提供用于热量散失的主要的导热。
参照图3,示出了通过下支架时具有特定的热量散失通道的LED封装。在图3所示的LED封装中,对应于图1A到图1E的LED封装的主要的类似组件而言,其指示的组件的参考标号补偿系数100,例如,图3中的LED模片124对应于图1A到图1E中的LED模片24。图3中的LED封装具有很小的与通道分阵列1211,1122连接的电接触区域,这样限制了热量散失。与通道分阵列1121,1122连接的下支架110的导热并不足以对LED模片124提供足够的和充分均匀的热量散失。
为了提供另外的热量散失,设置有指定热量散失通道的第三通道分阵列1123。第三通道分阵列1123的通道并不与LED模片124电接触,并且不能电激发LED模片124。第三通道分阵列1123的通道是导热的,但可以是导电的或者电绝缘的。合适的形成分阵列1123的通道类似于形成电通道的处理操作84,86。热通道分阵列1123的前侧端部与位于LED模片124和下支架110之间的导热未充满材料160热连接,从而使得LED模片124和指定的热通道分阵列1123之间提供热接触。导热垫162与热通道分阵列1123的后侧端部接触,从而使得与放置有表面安装LED封装的印刷电路板或者其它支架提供热接触。
继续参照图1A到图2,并参照图4,示出了一种用于结合由实施例处理60形成的LED模片24和由实施例处理80形成的下支架晶圆10的合适方法200。LED模片24覆晶封装结合202到下支架10。在优选实施例中使用铜结合凸块44,优选使用热超声焊。热超声焊的优点在于接合晶圆温度大约为150℃,且热超声焊在其后的热稳定性可以达到600℃。可替代地,也可以采用标准的焊接方法。
随着LED模片24被连接到下支架10,便可选择地执行下支架晶圆级处理206,例如,利用光学涂覆、后侧基底处理、分步可重复地执行LED模片的封装、或者类似的操作。下支架晶圆级处理优选同时处理所有的模片24,或者利用便利的分步可重复排列。此外,下支架晶圆按照大小排列,以被传统的自动硅处理系统接收和处理,但它并不能接收和处理为分成模片的LED基底晶圆32。另外,特定的处理,如LED模片的封装不能在模片结合之前进行。在选择了下支架晶圆级处理206之后,下支架晶圆被锯开,分成模片,或者沿着分离面48切割开,从而产生独立的表面安装LED封装210。分离可以利用机械锯,激光锯,或者其它的适合技术来进行。
继续参照图4,并参照图5,描述了应用于下支架晶圆级处理206的包括单个的LED封装360的发光二极管元件。在图5所示的LED封装中,对应于图1A到图1E的LED封装的主要组件的类似组件的参考标号补偿系数300,例如,图5中所示的LED模片324对应于图1A到图1E中所示的LED模片24。在制造图5所示的LED封装时,在进行下支架晶圆级处理206时,单独的LED密封剂360涂抹到每一个LED模片324和下支架310的前表面316的周围部分从而密封LED模片324。单独的密封360适合利用分步可重复装置,如利用自动硅装置处理来合适地涂抹。模制密封剂优选地由环氧树脂或者其它密封材料制成,从而与LED基底332可具有良好的折射率匹配,并且优选地,其形状使得可制造照明输出的可选择的透镜。
继续参照图4,并参照图6,示出了应用于下支架晶圆级处理206的包括单个LED未充满材料460的LED封装。在图6所示的LED封装中,对应于图1A到图1E的LED封装的主要组件的类似组件的参考标号补偿系数400,例如,图6中的LED模片424对应于图1A到图1E中的LED模片24。在制造图6中所示的LED封装时,在进行下支架晶圆级处理206时,单个的LED未充满材料460被涂抹到覆晶封装结合的每一个LED模片424的分界面,从而密封LED模片424的主要组件,如半导体层434和电极440。优选地,未充满材料460是导热的从而有助于热量散失。未充满材料460适合利用分步可重复装置进行涂抹,该装置可连续处理每一个覆晶封装结合的LED模片424。
继续参照图4,并参照图7,示出了应用于下支架晶圆级处理206的包括光学镀膜560的LED封装。在图7所示的LED封装中,对应于图1A到图1E的LED封装的主要组件的类似组件的参考标号补偿系数500,例如,图7中所示的LED模片524对应于图1A到图1E中所示的LED模片24。在制造图7中所示的LED封装时,在进行下支架晶圆级处理206时,光学镀膜560被施加到LED模片524的透光基底。镀膜560可以是减反射涂层、折射率匹配涂层、磷层、或者类似的涂层。光学镀膜560可以利用分步可重复的装置进行涂抹,它可以连续处理覆晶封装结合到下支架晶圆510上的各个LED模片。可替代地,光学镀膜560可以施加到包括LED模片524的下支架晶圆的前侧516。在后面的方法中,镀膜560也可以涂覆到下支架晶圆510,除非涂层的化学性质使得涂层不能粘附在下支架晶圆510上。
继续参照图4,并参照图8,LED封装包括轮廓形(contoured)的折射面660,其提供可选择的光折射效果。轮廓形折射面660由下支架晶圆级处理206形成。在图8所示的LED封装中,对应于图1A到图1E的LED封装的主要组件的类似组件的参考标号补偿系数600,例如,图8中所示的LED模片624对应于图1A到图1E中所示的LED模片24。在制造图8所示的LED封装时,在进行下支架晶圆级处理206时,光刻的或者光学限定的表面轮廓形图样形成于LED模片624的透明基底内,其可通过等离子蚀刻,湿法化学蚀刻,或者类似的方法而形成。轮廓形折射面660可以包括光折射透镜特性,菲涅耳透镜模式,或其它的可选择的光折射轮廓。
参照图9,示出了LED封装,其包括由下支架晶圆级处理206施加的横向连续的密封剂,以及位于LED模片的横向区域外侧的通道。在图9所示的LED封装中,对应于图1A到图1E的LED封装的主要组件的类似组件的参考标号补偿系数700,例如,图9中所示的LED模片724对应于图1A到图1E中所示的LED模片24。在制造图9所述的LED封装时,在进行下支架晶圆级处理206时,横向连续的环氧树脂膜或其它密封剂膜760被涂抹到下支架晶圆710上。密封剂膜710密封所有的LED模片724,在单一的膜沉积处理中,LED模片覆晶封装结合于下支架晶圆710。在图4的下支架分离处理208中,当下支架晶圆沿着分离面748被分离时,分离限定了每一个分离的表面安装LED封装的密封剂710的侧边。
继续参照图9,其示出的LED封装还包括位于LED模片724的横向区域外面的电通道714。结合凸块744位于由图2的印刷电路处理90所形成的印刷电路750上,印刷电路750通过通道714与结合凸块744连接。通道714依次连接位于下支架晶圆710的后侧718的连接垫746。优选地,在该种排列时,下支架710可提供对于LED模片724的主要的热量散失路径。适合的导热下支架材料是AIN(氮化铝)。在发光二极管模片724的横向区域的外面布置通道714可以提供有利于覆晶封装结合的光滑表面,其对于某种类型的模片连接处理是非常重要的。
参照图10,示出了LED封装,其包括横向的连续密封剂膜以及设置作为分离的LED封装的侧壁的通道。在图10所示的LED封装中,对应于图1A到图1E的LED封装的主要的组件的类似组件的参考标号补偿系数800,例如,图10中所示的LED模片824对应于图1A到图1E中所示的LED模片24。与图8中的密封剂膜760相似的晶圆级密封剂膜860在下支架晶圆级处理206中被施加作为横向的连续膜。
通道814设置在LED模片824的横向区域的外面,而印刷电路850使得结合凸块844与通道814电连接。在图4所示的LED封装的分离处理208中,单个的表面安装LED封装沿着分离面被分离,其中的分离面基本上与通道814的中心轴一致。因此,通道814位于分离的LED封装的侧壁862上。为了易于分离,图2中的通道形成过程86优选被限制以将导电通道材料沉积到所钻的孔中。将通道814设置在分离的LED封装的侧壁上,与包括通过分离的表面安装LED封装下支架的通道的其它实施例相比,可以提高分离的表面安装LED封装的结构可靠性。优选地,利用AIN(氮化铝)或其它导热下支架材料来提高主要的热量散失。
图9和图10的LED封装包括密封剂膜760,860,在图4的分晶圆级处理206中,它们跨过下支架晶圆710,810的前侧716,816而被施加。每一个分离的表面安装LED封装的密封剂的侧边或侧壁都由分离面748限定,其横向穿过图9和图10中所示的LED封装的前侧表面716,816。
参照图11,示出了表面安装LED封装,其具有非垂直的分离面。在图11所示的LED封装中,对应于图1A到图1E中所示的LED封装的主要组件的类似组件的参考标号补偿系数900,例如,图11中所示的LED模片924对应于图1A到图1E中所示的LED模片24。图11所示的LED封装包括LED模片924,其具有下支架910覆晶封装结合在一起的透明基底932,其中下支架具有通道阵列912,它使得位于下支架前侧916上的印刷电路950和位于下支架后侧918上的可软焊接合垫946电连接。所施加的平面密封剂膜960类似于图9和图10中所示的平面镀膜760,860。
然而,不同于图1A到图1E示出的LED封装所使用的垂直分离面48,图11中所示的LED封装是利用“V”型槽970来分离的,其从下支架晶圆的后侧918开始切割。在形成“V”型槽970之后但是在分离LED封装之前,反射材料沉积到后侧918从而在密封剂960的倾斜边上形成反射膜974从而限定反射杯。剩余的下支架材料被断裂开从而分离表面安装LED封装。可选择地,转换模制透镜976设置于每一个表面安装LED封装上以进一步提高光吸收。
参照图12和图13,其分别示出了表面安装LED封装,其具有由空穴晶圆限定的反射空穴。在图12所示的LED封装中,对应于图1A到图1E中的LED封装的主要组件的类似组件的参考标号补偿系数1000,例如,图12中所示的LED模片1024对应于图1A到图1E中所示的LED模片24。图12所示的LED封装包括LED模片1024,它与下支架1010覆晶封装结合在一起,其中下支架具有通道1014,它使得位于下支架前侧1016上的LED模片1024和位于下支架后侧1018上的可软焊结合垫1046电连接。
继续参照图12和图13,并参照图14,限定反射空穴的空穴晶圆1078(其前侧如图13所示)与下支架晶圆1010的前侧1016结合。空穴晶圆1078包括空穴1080,且每一个空穴都具有截头圆锥的形状(也就是说,空穴的形状为圆锥的截锥体)。在一个适合的实施例中,空穴晶圆1078是硅晶圆,且其空穴1080的倾斜边通过各向异性蚀刻之后的钻有选定角度而形成1100。反射材料施加1102到空穴晶圆1078的前侧,从而在空穴1080的倾斜边上形成反射涂层1082,其限定了反射杯。代替反射涂层1082,也可以使用白色的陶瓷空穴晶圆1078而不需要光学涂层。
LED模片1024和其上形成有反射空穴1080的空穴晶圆1078结合1110到下支架晶圆1010上,使得二极管模片1024与空穴晶圆1078利用覆晶封装结合在一起,且其相对定位,从而使得每一个反射空穴1080都能接收一个LED模片1024。在一个适合的密封处理1112中,密封材料分配到结合的空穴晶圆1078的顶部并通过海绵体、橡胶滚轴等迫入到空穴1080中,以形成密封填料1060。可替代地,可以使用自动的分步可重复密封剂涂抹器。可选择地,磷涂层1084被涂抹1114到空穴晶圆1078的表面,并且密封填料1060用于将二极管的光,如蓝光或者紫外GaN的LED光转换成为可选择的照明光,如白光。单个的表面安装LED封装1120通过锯或者切割下支架晶圆1010而被分离1116,并沿着垂直的分离面1048与空穴晶圆1078相结合。
所获得的LED封装1120是非常坚固的。因为密封填料1060嵌入到空穴1080中,软材料,如硅树脂可以用作密封材料。由空穴1080形成的反射杯提高了光的吸收,并且与磷化的单个LED模片相比,磷涂层1084的下支架晶圆级沉积可以提供一致的磷化物厚度和均匀性,同时提高了不依赖于方向的色感一致性。可选择地,在分离1116之前可以利用自动的分步可重复涂抹器施加透镜阵列(未示出)以进一步提高光吸收。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包括在本发明的保护范围之内。
Claims (44)
1.一种用于制造多个表面安装发光二极管(LED)封装的方法,所述方法包括:
制造多个发光二极管(LED)模片,每一个所述模片都包括位于透光基底上的发光半导体层,以及位于与所述透光基底相对的所述半导体层上的前侧p型和n型触点;
在电绝缘下支架晶圆上钻有多个开孔的阵列;
将金属施加到钻成的所述开孔中以产生多个通道阵列;
将所述LED模片覆晶封装结合到所述下支架晶圆上,通过所述通道阵列,所述各个覆晶封装结合的LED的p型和n型触点与所述下支架晶圆的可软焊的后侧电连接;
设置有导热路径,用于从所述覆晶封装结合的LED模片上将热量传导至所述下支架晶圆的可软焊的后侧;以及在覆晶封装结合之后,分离所述下支架晶圆从而制造所述表面安装LED封装,每一个所述LED封装都至少包括一个所述LED模片。
2.根据权利要求1所述的方法,其中设置所述导热路径的步骤包括:
选择具有导热性能 的电绝缘下支架晶圆。
3.根据权利要求1所述的方法,其中设置所述导热路径的步骤包括:
钻有多个开孔阵列,且每一个所述阵列的开孔都空间分布以对所述覆晶封装的LED模片提供基本均匀的空间散热。
4.根据权利要求1所述的方法,其中设置所述导热路径的步骤包括:
将指定的导热路径与各个所述开孔的阵列相结合;以及将导热材料充满到所述指定的导热路径中从而产生导热通道,其与所述LED模片的p型和n型触点不建立电接触。
5.根据权利要求1所述的方法,还包括:
在覆晶封装结合之后以及在分离下支架晶圆之前,在其上覆晶封装结合有LED模片的下支架晶圆上执行至少一个晶圆级处理操作。
6.根据权利要求1所述的方法,还包括:
在覆晶封装结合之后以及在分离下支架晶圆之前,封装所述下支架晶圆的前侧,从而热密封所述覆晶封装结合的LED模片。
7.根据权利要求1所述的方法,还包括:
在空穴晶圆中形成多个光学空穴,每一个所述光学空穴对应于一个所述通道阵列;以及
在分离所述下支架晶圆之前,将所述空穴晶圆结合到所述下支架晶圆的前侧,从而使得所述覆晶封装结合的LED位于所述光学空穴内。
8.一种发光二极管(LED)封装,包括:
LED,具有第一侧,在其上布置有一对电触点,以及第二侧;以及
下支架,具有第一侧,在其上结合有所述LED的第一侧,以及第二侧,所述下支架设置有:多个导电路径,从所述下支架的第二侧延伸到所述下支架的第一侧,所述导电路径与所述LED的电触点连接,从而使得电能可从所述下支架的第二侧输送到所述LED,以及一个或多个导热路径,从所述下支架的第一侧延伸到所述下支架的第二侧,从而使得由所述LED产生的热量从所述下支架的第二侧去除。
9.根据权利要求8所述的LED封装,其中所述下支架包括:
具有内表面和外表面的电绝缘体;以及
多个第一导电通道,所述多个第一通道充当所述导电路径的至少一部分。
10.根据权利要求9所述的LED封装,其中所述多个第一通道穿过所述电绝缘体的内部。
11.根据权利要求10所述的LED封装,其中所述LED的第一侧通过周界界定范围,并且所述多个第一通道位于所述周界的外面。
12.根据权利要求9所述的LED封装,其中所述多个第一通道围绕着所述电绝缘体的外表面。
13.根据权利要求9所述的LED封装,其中所述下支架的电绝缘体是导热的,并充当一个或多个所述导热路径的至少一部分。
14.根据权利要求9所述的LED封装,其中所述多个第一导电通道是导热的,并充当一个或多个所述导热路径的至少一部分。
15.根据权利要求9所述的LED封装,其中所述下支架还包括:
第二组一个或多个导热通道,其明显不同于所述多个第一导电通道,所述第二组导热通道充当一个或多个所述导热路径的至少一部分。
16.根据权利要求8所述的LED封装,其中所述下支架还包括:
一对导电块和导热块,夹入到电绝缘屏障之间,所述电绝缘屏障使得所述一对块彼此电绝缘,所述一对块充当所述导电路径和所述导热路径的至少一部分,以及所述LED与所述下支架连接,从而使得所述LED的一个触点与所述块中的一个电连接,所述LED的另一个触点与所述块中的另一个电连接。
17.根据权利要求8所述的LED封装,其中所述下支架还包括:
多个导热和导电凸块,形成于所述下支架和所述LED的其中一个的第一侧,通过热超声焊,所述凸块将所述LED和所述下支架连接在一起。
18.根据权利要求17所述的LED封装,其中所述凸块的高度小于约25微米。
19.根据权利要求17所述的LED封装,其中所述凸块包括:
金属铁心;
屏障金属,涂覆在所述金属铁心上;以及
可结合金属,涂覆在所述屏障金属上。
20.根据权利要求19所述的LED封装,其中金属铁心是铜或铝,所述屏障金属是镍,而所述可结合金属是金。
21.根据权利要求8所述的LED封装,还包括:
排列在LED上的透光材料。
22.根据权利要求21所述的LED封装,其中所述透光材料封装所述LED。
23.根据权利要求21所述的LED封装,其中所述透光材料形成透镜。
24.根据权利要求23所述的LED封装,其中所述透镜是菲涅耳透镜。
25.根据权利要求8所述的LED封装,还包括:
涂覆在所述LED上的减反射涂层,所述减反射涂层有助于吸收来自所述LED的光。
26.根据权利要求8所述的LED封装,还包括:
磷,设置用来接收来自所述LED的第一波长的光,并对其响应发射第二波长的光。
27.一种发光二极管(LED)封装,包括:
LED,包括位于其表面的电触点;以及
电绝缘下支架,具有:(i)前侧,包括与所述LED电触点接触的印刷电路;(ii)后侧,包括电接触垫;以及(iii)导电路径,通过绝缘下支架,且将所述前侧的印刷电路与所述后侧的电接触垫连接从而将电能从所述下支架接触垫的后侧输送到所述LED。
28.根据权利要求27所述的LED封装,其中所述导电路径包括:
多个p触点导电路径,设置为与所述LED的一对电极触点的P触点平行电连接,所述LED具有所述下支架的后侧的正的接触垫;以及
多个n触点导电路径,设置为与所述LED的一对电极触点的n触点平行电连接,所述LED具有所述下支架的后侧的负的接触垫。
29.根据权利要求27所述的LED封装,其中所述电绝缘下支架是基本上绝热的,所述电绝缘下支架还包括:
通过所述绝缘下支架的导热路径,其传导来自所述LED的热量。
30.根据权利要求27所述的LED封装,其中所述LED包括:
透光基底;
位于所述基底前侧的半导体层,所述半导体层限定出作用区,在所述半导体层上布置有电触点作为前侧触点,从而使得所述LED覆晶封装安装到所述下支架的前侧从而与印刷电路接触。
其中,由所述作用区产生的光与通过所述基底的前侧触点的电输入响应,并且至少从所述基底的后侧发出。
31.根据权利要求30所述的LED封装,其中所述半导体层包括选自:氮化镓(GaN)、氮化铝(AIN)、氮化铟(InN)、及其合金组成的组中的层。
32.根据权利要求30所述的LED封装,其中所述基底的后侧图样化以限定折射光表面。
33.根据权利要求27所述的LED封装,还包括:
模制材料,包围至少所述LED,并提供折射率匹配和透镜中的至少一个,以修正从所述LED发射的光。
34.根据权利要求27所述的LED封装,还包括:
设置在所述LED和所述下支架之间的界面周围的未充满材料。
35.根据权利要求27所述的LED封装,其中所述下支架由陶瓷材料和复合材料中的一种形成。
36.根据权利要求27所述的LED封装,其中所述下支架的导电路径包括填充通过所述下支架的开孔的金属。
37.根据权利要求27所述的LED封装,还包括:
位于所述下支架前侧的通常为环状的环,所述通常为环状的环限定出所述LED设置在其内侧的反射空穴。
38.根据权利要求27所述的LED封装,其中所述LED包括多个LED,每一个所述LED都在所述下支架前侧与相应的印刷电路接触。
39.一种用于制造多个发光二极管(LED)封装的方法,所述方法包括:
将多个LED覆晶封装结合于所述电绝缘下支架晶圆的前侧,所述下支架晶圆包括:前侧触点,在所述覆晶封装结合时其与所述LED的电极电接触,所述下支架还包括导电路径,其使得所述前侧触点与设置于所述下支架晶圆后侧的可软焊的接触垫电连接;
在所述LED覆晶封装结合于其上的所述下支架晶圆上执行至少一个晶圆级处理操作;以及
分离所述下支架晶圆以制造多个所述LED封装,各个所述LED封装包括多个所述LED中的至少一个。
40.根据权利要求39所述的方法,其中所述覆晶封装结合采用热超声焊。
41.根据权利要求39所述的方法,其中在所述LED覆晶封装结合于其上的所述下支架晶圆上执行至少一个晶圆级处理操作的步骤包括:
修正所述LED的透光基底的背部表面。
42.根据权利要求41所述的方法,其中所述晶圆级处理包括下列步骤中的至少一个:
化学处理所述下支架晶圆从而在所述LED的透光基底上产生蚀刻的图样,
对包括所述LED的透光基底的所述下支架进行光学涂覆,
在封装所述覆晶封装结合的LED的所述下支架晶圆上施加密封材料,以及
将模制材料分布重复地施加到所述下支架晶圆上的所述LED上,所述模制材料限定了局部地施加到各个所述LED上的密封剂。
43.根据权利要求39所述的方法,还包括:
将空穴晶圆与所述电绝缘下支架晶圆的前侧相结合,所述空穴晶圆包括光学空穴,其接收覆晶封装结合的多个LED。
44.根据权利要求39所述的方法,其中分离所述下支架晶圆从而制造多个LED封装的步骤包括:
沿着所述导电路径中的至少一些分离,从而使得分离的所述LED封装包括导电侧壁。
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US20040203189A1 (en) | 2004-10-14 |
US6964877B2 (en) | 2005-11-15 |
EP1609190A2 (en) | 2005-12-28 |
US20040188696A1 (en) | 2004-09-30 |
WO2004088760A3 (en) | 2005-09-09 |
KR20060020605A (ko) | 2006-03-06 |
JP2006521699A (ja) | 2006-09-21 |
WO2004088760A2 (en) | 2004-10-14 |
JP5208414B2 (ja) | 2013-06-12 |
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