CN1774525A - 用于原子层淀积的气体输送装置 - Google Patents
用于原子层淀积的气体输送装置 Download PDFInfo
- Publication number
- CN1774525A CN1774525A CNA028239032A CN02823903A CN1774525A CN 1774525 A CN1774525 A CN 1774525A CN A028239032 A CNA028239032 A CN A028239032A CN 02823903 A CN02823903 A CN 02823903A CN 1774525 A CN1774525 A CN 1774525A
- Authority
- CN
- China
- Prior art keywords
- gas
- chamber
- substrate
- valve
- mentioned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000231 atomic layer deposition Methods 0.000 title abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 132
- 238000000034 method Methods 0.000 claims abstract description 41
- 230000002093 peripheral effect Effects 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 344
- 239000000376 reactant Substances 0.000 claims description 101
- 238000006243 chemical reaction Methods 0.000 claims description 39
- 238000010926 purge Methods 0.000 claims description 30
- 150000003482 tantalum compounds Chemical class 0.000 claims description 21
- 239000012530 fluid Substances 0.000 claims description 17
- 238000012545 processing Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 abstract description 3
- 108091006146 Channels Proteins 0.000 description 66
- 238000010408 sweeping Methods 0.000 description 53
- 230000004888 barrier function Effects 0.000 description 41
- 150000001875 compounds Chemical class 0.000 description 30
- 238000010438 heat treatment Methods 0.000 description 29
- 239000010410 layer Substances 0.000 description 26
- -1 polytetrafluoroethylene Polymers 0.000 description 19
- 238000012546 transfer Methods 0.000 description 19
- 238000007664 blowing Methods 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 230000002829 reductive effect Effects 0.000 description 14
- 239000012159 carrier gas Substances 0.000 description 12
- 239000007787 solid Substances 0.000 description 12
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 230000004044 response Effects 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 239000013618 particulate matter Substances 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 239000003153 chemical reaction reagent Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 238000005086 pumping Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 230000011218 segmentation Effects 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 102000010637 Aquaporins Human genes 0.000 description 2
- 108010063290 Aquaporins Proteins 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- 229920001774 Perfluoroether Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229960001866 silicon dioxide Drugs 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229920004463 Voltalef® Polymers 0.000 description 1
- YXEBCJAVXPLYIV-UHFFFAOYSA-N [Ta].C(C)NC Chemical compound [Ta].C(C)NC YXEBCJAVXPLYIV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000002520 cambial effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- OMFXVFTZEKFJBZ-HJTSIMOOSA-N corticosterone Chemical compound O=C1CC[C@]2(C)[C@H]3[C@@H](O)C[C@](C)([C@H](CC4)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 OMFXVFTZEKFJBZ-HJTSIMOOSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- MTHYQSRWPDMAQO-UHFFFAOYSA-N diethylazanide;tantalum(5+) Chemical compound CCN(CC)[Ta](N(CC)CC)(N(CC)CC)(N(CC)CC)N(CC)CC MTHYQSRWPDMAQO-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- HKOOXMFOFWEVGF-UHFFFAOYSA-N phenylhydrazine Chemical compound NNC1=CC=CC=C1 HKOOXMFOFWEVGF-UHFFFAOYSA-N 0.000 description 1
- 229940067157 phenylhydrazine Drugs 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- NNPPMTNAJDCUHE-UHFFFAOYSA-N trimethylmethane Natural products CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45582—Expansion of gas before it reaches the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
Abstract
一种用于实施循环层淀积法,如原子层淀积的装置和方法。在一种情况下,装置包括一个衬底支承件和一个室盖,上述衬底支承件具有一个接收衬底的表面,而上述室盖包括一个锥形通道和一个底部表面,上述锥形通道从室盖的中央部分延伸,而上述底部表面从通道延伸到室盖的周边部分,底部表面加工成一定的形状和尺寸,以便基本上盖住接收衬底的表面。装置还包括一个或多个阀和一个或多个气源,上述一个或多个阀连接到逐渐扩张的通道上,而上述一个或多个气源连接到每个阀上。
Description
发明背景
发明领域
本发明的各实施例总体上涉及一种用于原子层淀积的装置和方法。更具体地说,本发明的一些实施例涉及一种改良的用于原子层淀积的装置和方法。
相关技术说明
可靠地生产亚微米和更小部件是用于下一代半导体器件超大规模集成电路(VLSI)和特大规模集成电路(ULSI)的关键技术之一。然而,当电路技术的条纹受挤压时,收缩VLSI和ULSI技术中互连线的尺寸已把一些附加的要求放在加工能力上。是这种技术心脏的多层互连要求精密加工高纵横比的形体,如孔洞和其它互连线。可靠的形成这些互连线对VLSI和ULSI的成功和继续努力增加电路密度和各个衬底的质量来说,都是很重要的。
当电路密度增加时,各种孔洞、触点,及其它部件的宽度,及它们之间的介电材料,都减小到亚微米尺寸(比如,小于0.2微米或更小)。而介电层的厚度基本上保持固定不变,其结果是各部件的纵横比,亦即它们的高度除以宽度的值减小。许多传统的淀积方法难以充填纵横比超过4∶1,和尤其是纵横比超过10∶1那些地方的亚微米结构。因此,有大量正在进行的努力对准了买有高纵横比的基本上没有空隙和无缝的亚微米部件的形成。
原子层淀积是一种研究将各材料层淀积在具有高纵横比的部件上的淀积技术。原子层淀积的其中一个例子包括依次加入各种气体的脉冲。例如,用于依次加入各种气体脉冲的一个循环可以包括一种第一反应物气体的脉冲,接着加一种吹扫气体和/或抽真空的脉冲,接着加一种第二反应物气体的脉冲,及接着加一种吹扫气体和/或抽真空的脉冲。如本文所用的术语“气体”定义为包括一种气体或多种气体。依次加入第一反应物和第二反应物的分开脉冲可以在衬底的表面上产生各反应物交替的自限制单层吸附作用,并因此形成用于每个循环的单层材料。循环可以重复到所希望的淀积材料厚度。在第一反应物气体脉冲和第二反应物气体脉冲之间的吹扫气体和/或抽真空脉冲,用来减少由于过量反应物留在室中而造成各反应物气相反应的可能性。
然而,需要有一种新的装置来实施气体输送和通过原子层淀积来实施薄膜的淀积。
发明概述
提供了一种用于实施循环层淀积法如原子层淀积的装置和方法。在一种情况下,装置包括一个衬底支承件和一个室盖,上述衬底支承件具有一个接收衬底的表面,而上述室盖包括一个锥形通道和一个底部表面,上述锥形通道从室盖的一个中央部分延伸,而上述底部表面从通道延伸到室盖的周边部分,底部表面加工成一定形状和尺寸,以便基本上盖住接收衬底的表面。装置还包括一个或多个阀和一个或多个气源,上述一个或多个阀连接到逐渐扩张的通道上,而上述一个或多个气源与每个阀连接。
在另一种情况下,装置包括一个衬底支承件,一个室盖,和一个或多个气体导管,上述衬底支承件具有一个接收衬底的表面,上述室盖包括一个扩展通道,和包括室盖的一个锥形底部表面,上述扩展通道向下延伸到室盖的中央部分,上述室盖的锥形底部表面从扩展的通道延伸到室盖的周边部分,而上述一个或多个气体导管围绕扩展通道上面部分设置,其中一个或多个气体导管与扩展通道的中心成一个角度设置。装置还包括一个或多个阀和一个节流口,上述一个或多个阀连接到逐渐扩展的通道上,而上述节流口邻近锥形底部表面的周长设置在室盖上。
在一种情况下,方法包括:在衬底中央部分上方一个起初圆的方向上提供一种或多种气体进入衬底处理室中;通过非绝热膨胀降低各气体的速度;提供各种气体给衬底的中央部分;及以一种基本上均匀的速度将各气体径向上跨过衬底从衬底的中央部分导引到衬底的周边部分上。
对附图的简要说明
因此,其中得到并可以详细理解上面所引用的本发明各部件的方式,上面简要综述的本发明的更具体说明,可能必须参照本发明的一些实施例,上述实施例在各附图中示出。
然而,应该注意,各附图仅示出本发明的一些典型实施例,并因此不能看作是限制本发明的范围,因为本发明可以允许其它的同等有效的实施例。
图1是一种室其中一个实施例的示意剖视图,上述室包括一个适用于原子层淀积的气体输送装置。
图2A是设置在室盖下面表面上的一种节流口其中一个实施例的示意剖视图。
图2B是设置在室盖下面表面上的一种节流口其中一个可供选择的实施例示意剖视图。
图3是包括适用于原子层淀积的气体输送装置的一种室可供选择的实施例示意剖视图。
图4是一种阀示出若干阀入口和出口的示意剖视图。
图5是图4中所示的一种示例性阀的示意平面图。
图6是一种阀其中一个实施例的示意剖视图,上述剖视图示出阀的各内部元件和机构。
图7是一种隔膜在一个打开位置和一个打开位置之间移动的曲线图。
图8是在本发明的气体输送装置内形成的一种扩展槽其中一个实施例的水平剖视图。
图9是适合于接收一种气流的扩展通道其中一个实施例的水平剖视图。
图10是适合于接收3种气流的扩展通道其中一个实施例的水平剖视图。
图11是在本发明的气体输送装置内形成的扩展通道剖视图。
图12是示出一种气体在一个衬底的表面和室盖1的底部表面之间的两个不同位置处流动的示意剖视图。
图13是一种室其中另一个实施例的示意剖视图,上述室包括一个适用于原子层淀积的气体输送装置。
图14示出一种室的另一个实施例,上述室包括一个适用于原子层淀积的气体输送装置。
图15是一种可用于本发明的气体输送装置的气体箱示意图。
图16是一种罐的其中一个实施例的示意剖视图,上述罐用于通过图15的气体箱内的升华作用产生一种气体。
对优选实施例的详细说明
图1是一种示例性处理系统200的示意局部剖视图,所述处理系统200能实施循环层淀积,原子层淀积,数字化学汽相淀积,和快速化学汽相淀积等技术。术语“循环层淀积”,“原子层淀积”,“数字化学汽相淀积”,和“快速化学汽相淀积”在本文中可互换式使用,并涉及一些气相淀积技术,由此可以把两种或多种化合物按顺序加入处理室的一个反应区中,以便在衬底表面上淀积一薄层材料。
室200包括一个室体202,一个气体输送系统230,一个真空系统278,及一个控制单元280。室体202具有数个侧壁204,一个底部206,和一个衬里299。在室体202的一个侧壁204中形成一个缝隙阀208,以便提供一个自动控制装置(未示出)用的出入口,把一个衬底210,如一个200mm或300mm的半导体片或一个玻璃衬底放入室200和从室200中取出。
衬底支承件212设置在室体202中,以便将一个衬底210支承在其上的一个接收衬底的表面211上。一个起重电动机214升高和降低衬底支承件212。一个连接到起重电动机218上的平台升降台216安装在室200中,并升高和降低活动式穿过衬底支承件212设置的销钉220。上述销钉220升高和降低在衬底支承件212的接收表面211上方的衬底210。衬底支承件212可以包括一个真空吸盘、一个静电吸盘、或一个夹环,用于在处理期间将衬底212固定到衬底支承件212上。衬底支承件212还可以加热,以便加热设置于其上的衬底210。例如,衬底支承件212可以用一个埋入式加热元件如一种电阻加热器加热,或者可以用辐射热如设置在衬底支承件212上方的加热灯加热。
室体202还包括一个吹气环222,上述吹气环222设置在衬底支承件212上,以便限定一个吹气通道224。吹扫气体通过吹气通道224流动到衬底210的周边部分,以防在其上淀积。
真空系统278与一个泵送通道279连通,上述泵送通道279在室体202的侧壁204内形成。真空系统278抽空室体202中的气体,并在室202的泵送区266内部保持一个所希望的压力或所希望的压力范围。泵送区266在室体202内形成,同时包围衬底支承件212。
气体输送系统230和室体202限定室体202内的一个反应区264。反应区264与衬底支承件212成流体连通。更具体地说,反应区264包括室200内一个气源和衬底表面之间的任何容积。反应物气体或吹扫气体可以足够充满反应区264,并保证衬底210充分暴露于反应物气体或吹扫气体中。在常规化学汽相淀积中,现有技术的各室要求同时而均匀地提供各反应物组合式流动到衬底的整个表面,以便保证各反应物的共反应跨过衬底的整个表面均匀地发生。在原子层淀积中,室200按顺序将各反应物加到衬底表面上,以便提供将各反应物的交替式薄层吸附到衬底的表面上。结果,原子层淀积不要求各反应物流动同时到达衬底表面。而是,每种反应物的流动需要以一个量提供,上述量足够用于将一薄层反应物吸附在衬底的表面上。
因为反应区264包括一个比常规CVD(化学汽相淀积)室的内部容积小的容积,所以对一种特定的方法需要较小的气体量来充满反应区264。例如,在一个实施例中,对一个适合于处理200mm直径衬底的室,反应区264的容积为约1000cm3或更少,优选的是约500cm3或更少,而更优选的是200cm3或更少。对一个适合于处理300mm直径衬底的室,反应区264的容积为约3000cm3或更少,优选的是1500cm3或更少,而更优选的是600cm3或更少。在一个实施例中,衬底支承件212可以升高或降低,以便调节供淀积用的反应区264的容积。由于反应区264的较小容积,所以较少的气体,无论是一种淀积气体还是一种吹扫气体,都必需流入室200。因此,室200的物料通过量更大,并且由于使用较少量的容积,所以废料可以减至最少,同时降低了运行成本。
在图1的实施例中,气体输送系统230设置在室体202的上面部分处,以便向室体202提供一种气体如工艺过程气体和/或吹扫气体。气体输送系统230包括一个室盖232和一个穿过室盖232形成的扩展通道234。室盖232包括一个底部表面260,上述底部表面260加工成一定尺寸和形状,以便基本上覆盖住设置在室体202内的衬底210。
室盖232底部表面260其中至少一部分可以从扩展通道234到室的一个周边部分成锥形,以便跨过衬底210的表面(亦即从衬底中心到衬底边缘)提供一种改良的气体速度分布图。底部表面260可以包括一个或多个锥形表面,如一种笔直表面,一种凹形表面,一种凸形表面,或它们的组合。优选的是,底部表面取漏斗的形状成锥形。在室盖232的向下倾斜的表面260和衬底210的表面之间的最大流动截面积和最小流动截面积之比,优选的是小于约2,更优选的小于约1.5,更优选的是小于约1.3,及最优选的是约为1。
若不想与理论结合,则可以认为,一种跨过衬底210表面具有一均匀速度的气体,提供一种气体在衬底210上更均匀的淀积。可以认为,气体的速度与气体的浓度成正比,而气体的浓度与气体在衬底表面上的淀积速率成正比。因此,在表面的第一面积处比表面的第二面积处气体的速度高,可以认为在第一面积上提供更高的气体淀积。因此,可以认为具有向下倾斜底表面260的室盖提供更均匀的气体跨过衬底表面的淀积,因为向下倾斜的底表面提供气体跨过衬底表面的更均匀的速度,并因此提供更均匀的浓度。
室盖232的内表面其中至少一部分,包括扩展通道234和底表面260,具有一个表面粗糙度(Ra以μ计)优选的是在约46Ra和62Ra之间,优选的是约54Ra。此外,吹气环222的上表面和室衬里299的上表面可以具有一个表面粗糙度是在约46Ra和62Ra之间,优选的是约54Ra。可以认为,这些表面粗糙度增加了淀积到这些表面上的膜的粘着力。增加了的淀积膜的粘着力减少了淀积膜在衬底处理期间剥离的可能,并因此减少了衬底的颗粒物污染的可能。在一个优选实施例中,表面粗糙度由电解抛光提供,以便提供一种镜面抛光的表面。镜面抛光的表面有助于在其上产生一个气体的层流。在另一些较少优选的实施例中,表面粗糙度可以通过用一种合适的层构织表面提供。
控制室盖232的温度对防止气体在室盖232上分解,淀积,或凝结是很重要的。因此,室盖232可以包括冷却元件和/或加热元件,这取决于待穿过其输送的特定气体。例如,在室盖232中可以形成水通道(未示出),以便冷却室盖232。在另一个例子中,可以将若干加热元件埋入或者可以包围室盖232的各元件,以便加热室盖232。
室盖232还可以包括一个室板部分270和一个帽部分272。帽部分272可以保持在一个温度范围内,而室板部分270可以保持在另一个温度范围内。例如,帽272可以用加热带或任何其它加热装置加热,以防止反应物气体凝结,而室板部分270保持在周围温度下。在另一个例子中,帽272可以加热,而室板部分270可以用穿过其形成的水通道(未示出)冷却,以防止反应物气体的热分解。
室盖232可以用不锈钢,铝,镀镍的铝,镍,用任何可与进行处理相容的合适材料制造。在一个实施例中,帽部分272包括不锈钢,而室板部分270包括铝。在一个实施例中,附加的板包括不锈钢。在一个实施例中,室盖232的扩展通道234和底部表面260可以包括一个镜面抛光的表面,以便帮助沿着室盖232的扩展通道234和底部表面260产生一种气体的层流。在另一个实施例中,气体导管250A,250B的内表面可以电解抛光,以便帮助产生气体穿过其的层流。
室盖232还包括一个节流口262,上述节流口262在室盖232的周边部分处,邻近衬底210的周边设置。节流口262可以是任何类型的障碍物,上述障碍物能限制气体在一个邻近衬底210周边的面积处的反应区264内流动。节流口262帮助保持反应区264内一个基本上均匀的压力。
例如,图2A示出节流口262一个实施例的示意剖视图。在这个实施例中,节流口262包括一个圆周形的侧向部分267。在一种情况下,吹气环222可以适合于使一种吹扫气体对准节流口262的侧向部分267。
作为另一个例子,图2B示出节流口262另一个实施例的示意剖视图。节流口包括一个圆周形向下延伸的凸起部分268。在一种情况下,吹气环222可以适合于使一种吹扫气体对准圆周形的向下延伸的凸起部分268。在一种情况下,向下延伸的凸起部分268的厚度是在约0.01英寸和约1.0英寸之间,更优选的是在0.01英寸和0.5英寸之间。
节流口262和衬底支承件212之间的间距通常是在约0.04英寸和约2.0英寸之间,而优选的是在0.04英寸和约0.2英寸之间。间距可以根据待输送的气体和淀积期间的方法条件改变。节流口262帮助反应区264容积内更均匀的压力分布,上述反应区264的容积通过使反应区264与泵送区266(图1)的非均匀压力分布隔开限定在室盖232和衬底210之间。
气体输送系统230还包括一个或多个与分开的气源成流体连通的阀(示出4个阀是242A,242B,252A,252B)。每个阀242A,242B各包括一个输送管路243A,243B,上述输送管路243A,243B各具有一个阀座组件244A,244B,而每个阀252A,252B各包括一个吹气管路245A,245B,上述吹气管路245A,245B各具有一个阀座组件246A,246B。每个输送管路243A,243B都各与相应的反应物气源238,239成流体连通,和各与扩展通道234相应的气体入口236A,236B成流体连通。输送管路243A,243B的阀座组件244A,244B控制反应物气体从反应物气源238,239到扩展通道234的流动。吹气管路245A,245B与吹扫气源240成流体连通,并在输送管路243A,243B阀座组件244A,244B的下游与输送管路243A,243B相交。吹气管路245A,245B的阀座组件246A,246B控制吹扫气体从吹扫气源240到输送管路243A,243B的流动。如果利用一种载气来从反应物气源238,239输送反应物气体,则优选的是用同一气体作为载气和吹扫气体(亦即利用氩气作为载气和吹扫气体)。
可编程逻辑控制器248A,248B可以耦合到阀242A,242B上,以便控制阀座组件244A,244B,246A,246B隔膜的动作。气动式驱动的阀可以提供许多低达约0.020秒时间周期的气体脉冲。用电驱动的阀可以提供许多低达约0.005秒时间周期的气体脉冲。用电驱动的阀通常需要利用一个传动装置耦合在阀和可编程逻辑控制器之间。
每个阀242A,242B都可以是一种零死容积阀,以便当阀的阀座组件244A,244B闭合时,能冲洗输送管路243A,243B中的反应物气体。当阀座组件244A,244B闭合时,吹气管路245A,245B可以提供一种吹扫气体,以便冲洗输送管路243A,243B。吹气管路245A,245B可以邻近输送管路243A,243B的阀座组件244A,244B设置。可供选择地,吹气管路245A,245B可以与输送管路243A,243B的阀座组件244A,244B稍微间隔开设置,如图所示,以便当阀座组件244A,244B打开时,吹扫气体不直接输送到阀座组件244A,244B中。如本文所用的一种死区容积阀定义为一种具有忽略不计的死容积(亦即不一定是零死容积)的阀。
每个阀242A,242B都可以适合于提供一种反应物气体238,239和吹扫气体240的组合式气流和/或它们分开的气流。关于阀242A,由阀242A所提供的反应物气体238和吹扫气体240一种组合式气流的一个例子,包括一个从吹扫气源240出来穿过吹气管路245A的吹扫气体连续流和从反应物气源238出来穿过输送管路243A的反应物气体脉冲。吹扫气体的连续流可以通过使吹气管路245A阀座组件246A的隔膜打开提供。来自反应物气源238的反应物气体脉冲可以通过打开和关闭输送管路243A阀座244A的隔膜提供。关于阀242A,由阀242A所提供的反应物气体238和吹扫气体240的分开气流其中一个例子包括从吹扫气源240出来穿过吹气管路245A的吹扫气体脉冲和从反应物气源238出来穿过输送管路243A的反应物气体脉冲。吹扫气体的脉冲可以通过打开和关闭阀252A阀座组件246A的隔膜提供。从反应物气源238出来的反应物气体脉冲可以通过打开和关闭阀242阀座244A的隔膜提供。
图3示出气体输送系统230的一个可供选择的实施例,上述输送系统230具有阀242A,242B,上述阀242A,242B安装在室体202的下方,并连接到一个或多个垂直穿过室体202的气体管路255上。各气体管路255也连接到气体导管250A,250B上。阀242A,242B也可以安装在其它位置中,和安装到其它室元件上,如安装在室盖232上。
在一种情况下,阀242A,242B连接到分开的反应物源238,239和分开的吹扫气源240,241上。分开的吹扫气源减少了阀242A,242B之间相互影响的可能性。在另一些实施例中,阀242A和242B可以如上所述,连接到同一吹扫气源240,241上。
图4示出阀242A,242B,252A,252B的示意剖视图。每个阀都包括一个具有3个口的阀体110,一个反应物入口112,一个吹扫气体入口114,和一个成流体连通的出口116。如上所述,反应物入口112与一反应物源238,239成流体连通。吹扫气体入口114与一吹扫气源240,241成流体连通,而出口116与处理室200成流体连通。
图5示出图4所示的阀示意透视图。阀体110可以包括一个或多个用于插入埋入式加热元件511的孔510。优选的是,各孔510最接近反应物入口112(在图4中示出),以便将反应物加热,来防止反应物在阀242A,242B内凝结。阀体110还可以包括一个或多个用于插入热电偶装置521的孔520,以便监测阀体110的温度。例如,在一个反馈环路中可以利用一测得的温度来控制从电源加到加热元件511上的电流,这样可以将阀体温度保持或控制在所希望的温度下或所希望的温度范围内。各孔510和520可以与反应物入口112十分接近,优选的是在-约2.0mm或更小的距离下设置,以便更好的提供反应物入口的加热和更好的监测反应物入口112的温度。优选的是,用于一个埋入式加热元件的每个孔510朝平行于入口112,114和出口116的平面方向上设置,以便埋入式加热元件还可以提供入口112,114和出口116的更均匀加热。
图6示出一种隔膜134,上述隔膜134安装在阀室111内一个阀座120的上方。隔膜134是阀242A,242B其中之一的一个实施例示意剖视图。然而,隔膜通常是偏置在一个闭合位置中,并且选择性地在一个打开位置(未示出)和一个闭合位置之间移动。隔膜134固定到一个阀杆336上,上述杆件336贯穿一个阀帽332,并被阀帽332滑动式支承。阀杆336选择性地使隔膜134在一个闭合位置和一个打开位置之间移动。汽缸340固定到阀帽332的顶部并安装一个活塞342。阀杆336的顶部从阀帽332伸出并固定到活塞342的下表面上。一个弹簧344安放在阀帽332和活塞342的下表面之间,并把活塞342和阀杆336往上推。汽缸340在活塞342的上表面和汽缸340的内表面之间形成一个动作室346。
隔膜134可以用气动方法或电子学方法驱动。优选的是,隔膜可以通过控制来自一加压的气体供应150的加压气体,如空气或其它气体,用气动方法驱动,以便选择性地移动隔膜134。尽管隔膜134是用气动方法驱动,不过可以将一种用电子学方法控制的阀如电磁阀安装或耦合到汽缸340上,以便选择性地提供以增压的气体供应150出来的加压的气体通过一气体管路151。尽管一种用电子学方法控制的阀152提供加压的气体给隔膜组件130,但因为隔膜是用气动方法驱动,所以阀242A,242B是用气动方法驱动的阀。
隔膜134可以是偏置式打开或闭合,和可以分别驱动式闭合或打开。在一个打开位置时,隔膜134允许反应物从反应物入口112流动和吹扫气体从吹扫入口114流动二者穿过阀室111到入口116并进入室体202。在一个闭合位置时,隔膜134处于与阀座120接触,以防止反应物从反应物入口112穿过阀室111流动。在某些优选实施例中,在闭合位置时,隔膜134不阻挡吹扫气体从吹扫入口114穿过阀室111流动到出口116并进入室体202。阀室111还可以包括一个槽122,上述槽122在阀体110中阀座120的下方形成,以便不管隔膜134是处于闭合位置还是处于打开位置,吹扫入口114和出口116仍然处于流体连通。如附图所示,槽122是环形形状,但它可以是任何合适的形状。
阀座120可以是与阀体110成一个整体部件。在一个可供选择的实施例中,阀座120可以是一个与阀体110分开的部件。阀座120优选的是一种不与通过反应物入口122提供的反应物发生反应的化学性能稳定的材料制造。化学性能稳定的材料其中一些例子包括聚酰亚胺(PI),聚四氟乙烯(PTFE),聚三氟氯乙烯(PCTFE),全氟烷氧基(PFA),及其它合适的聚合物。在一些较少优选的实施例中,阀座120可以用金属、金属合金,及其它合适的材料制造。在某些实施例中,根据由其提供的反应物,将阀体110加热到在约80℃和约90℃之间的一个温度,以便防止反应物凝结在隔膜134或其它的阀242A,242B元件上。如果用氨气作为一种反应物,则阀座120优选的是用一种化学性能稳定的聚酰亚胺如VespelCR-6100制造。现已证明,氨气在80℃或高于80℃的温度下与聚酰亚胺VespelCR-6100是化学上惰性的,而氨气在80℃或高于80℃的温度下可以与其它的聚酰亚胺反应。
关于阀242A,242B的操作,将可编程逻辑控制器(PLC)248A,248B耦合到阀242A,242B上,以便控制电信号到用电子学方法控制的阀152。用电子学方法控制的阀152当打开时,通过连接器349将加压的气体供给到动作室346中,同时形成一个压力,所述压力迫使活塞342和阀杆336向下顶着弹簧344的弹性力。隔膜134的中央部分被阀杆336向下压,并接触阀座120,同时关闭反应物从反应物入口112到出口116的流入。当隔膜134接触阀座120时,隔膜134不阻塞槽122,并且吹扫气体可以以吹扫气体入口114流到出口116。用电子学方法控制的阀152当关闭时,停止供应加压的气体,并使动作室346内部加压的气体减压。当停止供应加压的气体时,动作室346的内部压力减压,活塞342和阀杆346借助于弹簧344的弹性力升起。当活塞342和阀杆336升起时,隔膜134移动离开阀体110的阀座120,同时让反应物从反应物入口112流入到出口116。
隔膜134在一个打开位置和一个闭合位置之间移动,以便提供反应物到出口116和进入室体202的脉冲。因为处在闭合位置的隔膜134不阻塞槽122,所以可以提供吹扫气体的连续流动从吹气管路114穿过阀室111并向外到出口116。结果,反应物的脉冲可以按剂量投入通过阀室111提供的吹扫气体连续流。通过阀室111提供的脉冲气体连续流冲洗在反应物脉冲之间留在阀室111中残留的反应物。在一种情况下,阀242A,242B其中每个都具有一个零死容积,因为在吹扫气体穿过阀体110到反应物入口112的阀座120的流路之间有可忽略不计的死容积。
图7是一个隔膜如阀242A或242B其中之一的隔膜134在一个闭合位置和一个打开位置之间移动的曲线图。如本文所用的术语“响应时间”定义为一个阀的隔膜从一打开位置移动到一个闭合位置或是从一个闭合位置移动到打开位置的时间。将阀的隔膜从一个打开位置移动到一个闭合位置的响应时间与阀的隔膜从一个闭合位置移动到一个打开位置的响应时间二者可以相同,或者可以不同,但优选的是大致相同。优选的是,阀242A,242B具有一响应时间为约50msec(毫秒)或更少,更优选的是20msec或更少。可以看出,一个阀如阀242A或242B,在动作室的内部容积为约2.8cm3的情况下,具有一响应时间为约40msec或更少。可以看出,一个阀如阀242A或242B,在动作室的内部容积为约0.9cm3情况下,具有一响应时间为约15msec或更少。
减少一个阀组件的响应时间,能在一段时间范围内提供更多的反应物脉冲循环。因此,处理衬底的生产能力增加。然而,阀242A,242B可以操纵到任何所希望的脉冲时间720。如本文所用的术语“脉冲时间”定义为将一个隔膜从一完全闭合位置移动到完全打开位置并回到完全闭合位置的时间。可以操纵阀242A,242B,以便提供脉冲时间为约1.0秒或更少,约500msec或更少,和甚至约200msec或更少。
与隔膜被一螺线管上下驱动相比,隔膜134的气动控制提供隔膜134贴着阀座120的“软”着陆。“软”着陆减少了隔膜在一打开位置和一闭合位置之间移动期间形成颗粒物,上述颗粒物由隔膜134顶着阀座120冲击引起。“软”着陆与通过一个螺线管直接移动隔膜所引起的“硬”着陆相比,还提供反应物以更多的层流穿过阀组件100。
在某些实施例中,动作室346的内部容积包括一个小容积,优选的是约3.0cm3或更少,更优选的是约1.0cm3或更少。如本文所用的术语“动作室的内部容积”定义为当动作室内部的压力减压时动作室的内部容积,并包括连接器349和动作室346与电气控制阀152之间任何气体管路的内部容积。动作室346的小内部容积可以更迅速地加压,结果可以更迅速地驱动隔膜134。
用电子学方法控制的阀152安装在隔膜组件130的汽缸340上,以便减少气体管路到动作室的内部容积增加的容积。气体管路增加的容积将增加动作室346的内部容积,并因此将增加给动作室346加压所需的时间,及因此增加阀242A,242B的响应时间。在一些可供选择的实施例中,如果利用一个气体管路来将用电子学方法控制的阀152连接到隔膜组件130的汽缸340上,则管路的长度优选的是约为1.0英寸或更少,以便减少动作室的内部容积。
将增压的气体供应150连接到用电子学方法控制的阀152上的气体管路151具有一内径为大于约0.125英寸,更优选的是约0.25英寸或更大。气体管路151的较大内径有助于通过提供一个较大的加压气体穿过其的传导充满动作室346的内部容积。结果,供给加压的气体到用电子学方法控制的阀152上的气体管路151的较大内径减少了阀组件242A,242B的响应时间。
再次参见图1,阀242A,242B通过气体入口236B与扩展通道234成流体连通,上述气体入口236B连接到输送管路243B上。在一种情况下,气体入口236A,236B邻近扩展通道234的上面部分237设置。在另一种情况下,气体入口236A,236B沿着上面部分237和下面部分235之间的扩展通道234长度设置。阀242A,242B的输送管路243A,243B可以通过气体导管250A,250B连接到气体入236A,236B上。气体导管250A,250B可以与阀242A,242B成为整体,或者可以与阀242A,242B分开。在一种情况下,阀242A,242B可以极接近地连接到扩展通道234上,以便减少阀242A,242B与气体入口236A,236B之间输送管路243A,243B和气体导管250A,250B中的任何不必要的容积。
扩展通道234具有一个内径,上述内径从扩展通道的上面部分237到下面部分235逐渐增加。在一个特定的实施例中,用于一个适合于处理200mm直径衬底的室的扩展通道234的内径,在扩展通道234的上面部分237处是在约0.2英寸和约1.0英寸之间,更优选的是在约0.3英寸和约0.9英寸之间,和更优选的是在0.3英寸和约0.5英寸之间,而在扩展通道234的下面部分235处是在约0.5英寸和约3.0英寸之间,优选的是在约0.75英寸和约2.5英寸之间,而更优选的是在约1.1英寸和约2.0英寸之间。在另一个特定实施例中,用于适合处理300mm直径衬底的室的扩展通道234的内径,在扩展通道234的上面部分237处是在约0.2英寸和约1.0英寸之间,更优选的是在约0.3英寸和约0.9英寸之间,及更优选的是在0.3英寸和约0.5英寸之间,而在用于300mm衬底的扩展通道234的下面部分235处是在约0.5英寸和约3.0英寸之间,优选的是在约0.75英寸和约2.5英寸之间,及更优选的是在约1.2英寸和约2.2英寸之间。一般,上述尺寸应用于一种扩展通道,上述扩展通道适合于提供一个总气流是在约500sccm和约3000sccm之间。然而,上述尺寸可以改变,以便适应任何穿过其的气流。
扩展通道234可以成形为一种截锥体(包括类似于截锥体的形状)。无论是提供一种气体朝向扩展通道234的壁,还是直接向下朝向衬底210,当气流穿过扩展室234时,由于气体的膨胀作用,所以气流的速度降低。气流的速度降低帮助减少气体吹去吸附在衬底210表面上反应物的可能性。
若不想与理论结合,可以认为,扩展通道234的直径从上面部分237到下面部分235逐渐增加,允许流过扩展通道234的气体绝热膨胀较少,上述绝热膨胀较少有助于控制气体的温度。流过扩展通道234的气体突然绝热膨胀可能降低气体的温度,同时造成气体凝结和形成颗粒物。形成较少的气体绝热膨胀,可以使更多的热量转移到气体或从气体中转移,并因此可以更容易控制气体的温度。逐渐变化的扩展通道可以包括一个或多个锥形内表面,如一种锥形笔直表面,一种凹形表面,一种凸形表面,或它们的组合,或者可以包括一个或多个锥形内表面的若干分段(亦即,一部分是锥形,和一部分不是锥形)。
图8是室盖232扩展部分234其中一个实施例的顶部剖视图。每个气体导管250A,250B可以与气体导管250A,250B的中心线和与扩展通道234圆心的半径线304成α角设置。气体穿过优选的是成一个角度α(亦即当α>0°时)设置的气体导管250A,250B进入,使气体朝一个圆方向流动,如箭头310A(或310B)所示。与直接笔直对着扩展通道(亦即当α=0°时)相反,成一个角度α提供气体,有助于提供更多的层流而不是紊流通过扩展通道234。可以认为,通过扩展通道234的层流导致一种改良的吹扫扩展通道234的内表面和室盖232的其它表面。相反,紊流可能不均匀地流过扩展通道234的内表面和其它表面,并且可能包含其中没有气流的死点或驻点。在一种情况下,气体导管250A,250B和相应的气体入口236A,236B相互隔开,并使一个流动朝向同一圆方向(亦即顺时针或反时针)。
图9是室盖扩展通道另一个实施例的顶部剖视图。所述室盖扩展通道适合于通过一个气体入口636接收来自一个气体导管650的单一气流,上述一个气体导管650连接到一个或多个阀(未示出)上。气体导管650可以与气体导管650的中心线602和与扩展通道234圆心的半径线604成一个角度α设置。成一个角度α(亦即当α>0°时)设置的气体导管650使气体朝一个圆方向流动,如箭头610所示。
图10是室盖扩展通道另一个实施例的顶部剖视图,上述室盖扩展通道适合于接收3种气流,上述3个气体从3个气体导管750A,750B,750C在一起,部分在一起(亦即3个气流的其中2个在一起)或分开通过3个入口736A,736B,736C,上述气体导管750A,750B,750C中每个导管都连接到一个或多个阀(未示出)上。气体导管750A,750B,750C可以与气体导管750A,750B,750C的中心线和与扩展通道734圆心的半径线704成一个角度α设置。成一个角度α(亦即当α>0°时)设置的气体导管750A,750B,750C使气体朝一个圆方向流动,如箭头710所示。
图11示出扩展通道234的剖视图,同时示出穿过扩展通道234的两种气流的简化表示。每个气体导管250A,250B和气体入口236A,236B都可以用与扩展通道纵向轴线290成任何关系设置。每个气体导管250A,250B和气体入口236A,236B优选的是垂直于(其中+B,-B=90°)纵向轴线290设置,或者从气体导管250A,250B的中心线302A,302B到纵向轴线290成一个角度+B或一个角度-B(其中0°<+B<90°或0°<-B<90°)设置。因此,气体导管250A,250B可以如图3所示垂直于纵向轴线290水平设置,可以向下成一个角度+B,或者可以向上成一个角度-B,以便提供一种气流,所述气流朝向扩展通道234的壁而不是直接向下朝向衬底210,这样帮助减少吹出吸附在衬底210表面上的反应物的可能性。此外,气体导管250A,250B的直径可以从阀242A,242B的输送管路243A,243B到气体入口236A,236B逐渐增加,以便在气体进入扩展通道234之前帮助降低气流的速度。例如,气体导管250A,250B可以包括一个逐渐增加的内径,或者可以包括多个具有逐渐增加内径的连接的导管。
尽管通过扩展通道234的确切流动模式还不知道,但可以认为,圆形流动310可以作为一种“涡流”或“螺旋”流动402A,402B通过扩展通道234,如箭头402A,402B所示。在一种情况下,涡流可以帮助形成更有效的吹扫扩展通道234,这是由于涡流模式跨过扩展通道234内表面的扫除作用。
在一个实施例中,使气体入口236A,236B和衬底210之间的距离变得足够远,以便“涡流”流动402分散成一种向下流动,如箭头404所示,因为一种跨过衬底210表面的螺旋流动可能是不理想的。可以认为,“涡流”流动402和向下流动404是以一种有效地吹扫室盖232和衬底210的层流方式前进。在一个特定实施例中,扩展通道234上面部分237与衬底210之间的距离为约1.0英寸或更大,更优选的是约2.0英寸或更大。在一个特定实施例中,距离410的上限取决于实际限制。例如,如果距离410很长,则气体穿过扩展通道234的滞留时间也长,因而用于气体淀积到衬底上的时间也长,并因而生产能力低。此外,如果距离410很长,则制造扩展通道234很困难。一般,距离410的上限对一个适合于处理200mm直径衬底的室来说可以是3英寸或更大,而对一个适合于处理300mm直径衬底的室来说可以是5英寸或更大。
图12示出气体在室盖232的底表面260和衬底210的表面之间两个不同位置502,504处流动的示意图。气体在任何流动分段处,亦即在任何半径处的速度,在理论上由下面方程式决定:
(1)Q/A=V
式中“Q”是气体的流量。“A”是流动的载面积。“V”是气体的速度。气体的速度与流动的截面积(H×2πR)成反比,其中“H”是流动截面的高度,和2πR是流动截面的周长。换句话说,气体的速度与流动截面的高度“H”和流动截面的半径“R”成反比。
将位置502和位置504处流动截面的速度进行比较,同时假定在所有位置处室盖232的底表面260与衬底210的表面之间的气体流量“Q”相等,则气体速度在理论上可以通过让各流动截面积“A”相等而变成相等。为了使位置502和位置504处的流动截面积相等,因为R2>R1,所以在位置502处的高度H1必须大于在位置504处的高度H2。
在操作时,衬底210利用一个自动控制装置(未示出)通过开口208输送到室200中。通过升降销220和自动控制装置的协同操作,将衬底210设置在衬底支承件212上。衬底支承件212将衬底210升起成与室盖232的底表面紧密相对。第一气流可以通过阀242A注入室200的扩展通道234,上述第一气流注入与通过阀242B注入室200的第二气流一起或分开(亦即脉冲)。第一气流可以包括一个来自吹扫气源240的吹扫气体连续流和来自反应物气源238的反应物气体脉冲,或者可以包括来自反应物气源238的反应物气体脉冲和来自吹扫气源240的吹扫气体脉冲。第二气流可以包括来自吹扫气源240的吹扫气体连续流和来自反应物气源239的反应物气体的脉冲,或者可以包括来自反应物气源239的反应物气体脉冲和来自吹扫气源240的吹扫气体脉冲。气流作为一种涡流模式402穿过扩展通道234,上述涡流模式402提供一种跨过扩展通道234内表面的扫除作用。涡流模式402分散成一种向下流动404朝向衬底210的表面。当它穿过扩展通道234时,气流的速度降低。然后气流跨过衬底210的表面和跨过室盖232的底部表面260前进。向下倾斜的室盖232底表面260帮助减少气流跨过衬底210表面的速度变化。然后气流通过节流262前进并进入室200的泵送区266。过量的气体,副产品等流入泵送通道279,和然后通过真空系统278从室200中排放。在一种情况下,气流以一种层流方式穿过扩展通道234和在衬底210的表面与室盖232的底表面260之间前进,上述层流方式帮助将反应物气体均匀暴露在衬底210的表面上,并有效地吹扫室盖232的内表面。
图13和14示出一种气体输送系统的可供选择的实施例,上述气体输送系统能按照本发明所述实施原子层淀积。因为某些元件与上述的那些元件相同或类似,所以在合适的地方采用相同的标号。
更具体地说,图13示出一种具有一个气体输送装置830的室800,上述气体输送装置830包括一个室盖832,该室盖860具有一个基本上是平的底表面860。在一种情况下,节流口262和衬底支承件210之间的间距是在约0.04英寸和约2.0英寸之间,更优选的是在约0.04英寸和约0.2英寸之间。
图14示出一种具有一个气体输送装置930的室900,上述气体输送装置930包括一个室盖932,所述室盖932提供一个具有一小容积的反应区964,和提供一种向下倾斜或漏斗形底部表面960。气体源937通过一个或多个阀941连接到通道933上。在一种情况下,通道933具有一个很长的长度,以便减少通过阀941加入的气体吹出吸附在衬底表面210上的反应物的可能性。
图15是本发明用的一种气体箱1000的一个实施例示意图。为了清楚和说明方便起见,气体箱1000将参照图3所示的室200进行说明。气体箱1000提供一种或多种化合物给阀242A,242B。气体箱1000可以是一个或多个气体箱分段(示出两个分段1000A,1000B)。每个气体箱分段1000A,1000B还可以包括一个通向相应吹扫气源240,241的连接部分1010。各气箱分段1000A,1000B还可以包括各种不同的阀,上述阀用于调节或另外控制提供给阀242A,242B的化合物。
图16是罐1300一个实施例的示意剖视图,上述罐1300用于通过由一种固体反应物源如五二甲胺钽(PDMAT)升华产生一种气体。罐1330可以适合于由一液体反应物源提供一种气体。一般,罐1330包括一个侧壁1202,一个盖1204,和一个封闭一内部容积1238的底部1232。盖1204或侧壁1202的至少其中之一包括一个入口1206和一个出口1208用于气体的进出。入口和出口1206,1208连接到阀1112,1114上,上述阀1112,1114装配一配合的拆卸配件1236A,1236B,以便于从气体输送系统230取下罐1300。可任选地,将一个捕油器1250连接在出口1208和阀1114之间,以使捕获在流到处理室200的气体中可能存在的油粒。
罐1300的内部容积1238分开成一个上面区1218和一个下面区1234。源固体1214至少部分地装满下面区1234。一个管道1302设置在罐1300的内部容积1238中,并适合于使罐1300内的气流朝向远离源固体1214的方向,同时有利地防止流出管道1302的气体直接碰撞源固体1214和使颗粒物变成悬浮在空气中和通过出口1208带走并进入处理室200。
管道1302在一第一端1304处连接到入口1206上。管道1302从第一端1304延伸到一第二端1326A,上述第二端1326A设置在上面区1218中源固体1214的上方。第二端1326A可以适合于使气流朝向侧壁1202,因此防止气流直接(线性)穿过在口1206,1208之间的罐1300,同时形成一个延长的平均流路。
在一个实施例中,管道1302第二端1326A的出口1306相对于罐1300的中心轴线1308成一个约15°-约90°的角度设置。在另一个实施例中,管道1302具有一个“J”形第二端1326B,上述“J”形第二端1326B使离开出口1306的气流朝向罐1300的盖1204。在另一个实施例中,管道1302具有一个第二端1326C,所述第二端1326C具有一个封闭管道1302末端的塞或帽1310。第二端1326C具有至少一个开口1328,上述开口1328在管道1302的侧面靠近帽1310形成。离开开口1328的气体通常朝向垂直于中心垂线1308并远离设置在罐1300下面区1234中的源固体1214。可任选地,至少一个如上所述的隔板1210(用虚线示出)可以设置在罐1300内,并与上述管道1302实施例的其中之一串联使用。
在操作时,罐1300的下面区至少部分地装有一种源固体1214。可供选择地,可以将一种液体1216加到源固体1214中,以便形成一种浆料1212。将罐1300保持在所希望的压力下,并用一电阻加热器1230加热到所希望的温度,上述电阻加热器1230靠近罐1300设置。一种载气如氩气以一个所希望的速率流过入口1206和管道1302进入上面区1218。管道1302的第二端1326A使在延长的平均流路中载气流朝向远离出口1208的方向,同时有利的是增加了载气在罐1300上面区1218中的停留时间,并防止载气在源固体1214上直接流动,以使颗粒物产生最少。在罐1300中增加的停留时间有利的是增加了升华的固体蒸汽在载气内的饱和程度,而同颗粒物产生的减少改良了产品的生产率,节省了源固体,并减少了下游污染。
参见图15,室200和气体箱1000的各种元件的温度可以控制,以便减少室中不想要的颗粒形成。例如,控制温度可以防止室200和气体箱1000的各种元件上的气体分解,淀积,或凝结。例如,可能理想的情况是,反应物从反应物源到气体分配系统230的流动路线是处在一比较高的温度下,以防止流动路线中反应物的凝结(亦即蒸气变成固体或蒸汽变成液体)。可能理想的情况是,室体202和室盖232都处在比较低的温度下,以防止反应物淀积在室体和室盖的表面上。
在一个实施例中,罐1300保持在约60℃和约70℃之间的一个温度下。从罐1300到阀242A和从罐1300到前级管道的气体管路(用区域1330代表),如通过加热带或其它加热装置保持在约80℃和约90℃之间的一个温度下。阀242A保持在约80℃和约90℃之间的一个温度下。从阀242A到室体202的气体管路255(用区域1332代表),如通过加热带或其它加热装置保持在约85℃和约95℃之间的一个温度下。优选的是,有一个反应物从罐1300到室体202的流动路线稍微增加的温度梯度,以便反应物的任何凝结都将朝罐方向流动而不是朝室体202方向流动。此外,吹扫气体源240优选的是提供一种在约85℃和约95℃之间一个温度下的经过预热吹扫气体如氩气。经过预热的吹扫气体帮助减少在区域1332处颗粒物形成的可能性,因为在区域1332处的各气体膨胀而在区域1332处增加了容积。
然后,将从室板部分270到帽272的管路255(用区域1334代表),如通过一筒形加热器或加热带保持在约45℃和约55℃之间的一个温度下,在另一个实施例中,区域1334不直接加热(亦即没有直接控制区域1334温度的加热装置)。
在一个实施例中,从吹扫气体源和含氮源到阀242B的气体管路不加热。阀242B不加热。从阀242B到室体202的气体管路255和从室板部分270到帽272的气体管路255也不加热。
在一个实施例中,室侧壁204保持在约20℃和约25℃之间的一个温度下。室板部分270保持在约25℃和约35℃之间的一个温度下。帽272保持在约30℃和约40℃之间的一个温度下,室侧壁202可以通过穿过其形成通道295(图1),并通过上述通道提供温度控制流体,如一种冷却流体或加热流体,保持在一个所希望的温度下。
在一个实施例中,室板部分270和帽272不包括加热或冷却元件。室板部分270和帽272的冷却通过从室板部分270和帽272到室侧壁204的热传递提供。在另一些实施例中,室板部分270和帽272可以包括冷却元件和/或加热元件。在一个实施例中,穿过室体202的气体管路255不接触室体202和/或通过一个绝热体与室体202分开,上述绝热体使气体管路255与室体202之间的热传递减至最少。
在某些实施例中,阀242A,242B与室盖232分开或远离室盖232安装,如图1所示安装在室体202的下方,以便简化室盖232温度的控制。例如,一个安装到室盖232上或紧密靠近室盖232安装的经过加热的阀可以将热量传递到室盖232上。传到室盖232上的热量可能引起或增加气体在室盖内表面上,如在膨胀通道234和底表面260上的不想要的淀积。远离盖安装的阀242A,242B不显著增加反应区264的容积,因为有很少或者没有气体返流到气体导管250A、250B中。例如,在由阀242A,242B提供吹扫气体连续流同时反应物按剂量加入吹扫气体流中的情况下,有一个非常恒定的正向气体流进入室体202中,上述正向气体流通过气体导管252A,252B提供。
控制单元280,如一种编好程序的个人计算机,工作站计算机等,可以连接到室200上,以便控制各处理条件,如图1所示。例如,控制单元280可以成形为在衬底处理顺序的不同阶段期间,控制从气源238,239,240出来的各种工艺流程气体和吹扫气体通过阀242A,242B的流动。控制单元280可以包括一个中央处理单元(CPU)282,配套电路284,和含有相关控制软件283的存储器286。
控制单元280可以是任何形式通用计算机处理器的其中之一,上述通用计算机处理器可以在工业调整中用于控制各种不同的室和子处理器。CPU282可以用任何合适的存储器286,如随机存取存储器,只读存储器,软盘驱动器,硬盘,或数字存储,本地或远程的其它形式。各种配套电路可以耦合到CPU282上用于支承室200。控制单元280可以耦合到另一个控制器上,上述另一个控制器邻近各单元室元件,如阀242A,242B的可编程逻辑控制器248A、248B设置。控制单元280与室200的各种其它元件之间的双向通信通过许多信号电缆处理,上述许多信号电缆集体地称之为信号总线288,上述信号总线288的其中一部分在图1中示出。除了从气源238、239、240和从阀242A、242B的可编程逻辑控制器248A、248B控制工艺流程气体和吹扫气体之外,控制单元280还可以成形为担负自动控制晶片处理中所用的其它活动,如晶片运输,温度控制,室抽真空,连同其它活动一道,其中某些活动在本文其它地方说明。
上述的处理室200和气体输送装置230,可以用来有利地执行各元素的循环淀积,或者执行各种化合物或合金/组合薄膜的循环淀积,上述各元素包括但不限于,钽、钛、钨和铜,而上述各种化合物或合金/组合薄膜包括但不限于,一个衬底表面上的氮化钽、氮化钽硅、氮化钛、氮化钛硅、氮化钨、氮化钨硅、及铜铝。如上所述,处理室200和气体输送装置230,也可以用来有利地执行各种材料在一个衬底表面上的化学汽相淀积。
如本文所用的,“衬底表面”涉及在其上完成薄膜处理的任何衬底表面。例如,衬底表面可以包括硅,氧化硅、掺杂的硅、锗、砷化镓、玻璃、蓝宝石及任何其它材料如各种金属,金属氮化物,金属合金,及其它导电材料,上述材料视用途而定。衬底材料还可以包括介电材料如二氧化硅和掺碳的二氧化硅。
如本文所用的“循环淀积”涉及依次加入两种或多种反应性化合物,以便在一个衬底表面上淀积单层材料。两种或多种反应性化合物交替式加入一个处理室的反应区。每种反应性化合物通过一个时间延迟分开,以便让每种化合物粘附在衬底表面上和/或在衬底表面上反应。在一种情况下,将一种第一前体或化合物A在第一时间延迟之后脉冲加入反应区中。接着,将一种第二前体或化合物B在第二时间延迟之后脉冲加入反应区中。当希望一种三元材料,如氮化钛硅时,例如,将一种第三化合物(C)在第三时间延迟之后按剂量/脉冲加入反应区中。在每个时间延迟期间,都将一种惰性气体如氩加入处理室中,以便吹扫反应区或者用别的办法除去反应区中任何残留的反应性化合物。可供选择地,吹扫气体可以在淀积过程中自始至终连续地流动,以便在时间延迟期间,各反应性化合物的脉冲之间仅是吹扫气体流动。各反应性化合物可供选择地脉冲至在衬底表面上形成所希望的薄膜或薄膜厚度时为止。
如本文所用的“脉冲”或“剂量”预定是涉及瞬时或不连续地加入一个处理室反应区的一种特定化合物的量。在每个脉冲内一种特定化合物的量可以在超出时间时变化,这取决于脉冲的持续时间。每个脉冲的持续时间是取决于许多因素的变量,上述许多因素如,例如,所用处理室的容积容量,连接于其上的真空系统,及特定化合物自身的挥发性/反应性。
每个脉冲/剂量的持续时间都是可变的,并且可以调节,以便例如适应处理室的容积容量及连接于其上的真空系统的能力。此外,一种化合物的加剂量时间可以按照化合物的流动速率,化合物的压力,化合物的温度,加剂量阀的类型,所用控制系统的类型,及化合物吸附到衬底表面上的能力等改变。加剂量时间还可以根据所形成层的类型和装置的几何形状改变。一般,加剂量时间应该足够长,以便提供一个足够吸附/化学吸附到基本上是衬底整个表面上的化合物容积,并在其上形成一层所希望的化合物厚度。
术语“化合物”预定包括一种或多种前体,氧化剂、还原剂、反应剂和催化剂,或它们的组合。术语“化合物”还预定包括一组化合物,如当在处理室中同时加两种或多种化合物时的情况。例如,一组化合物可以包括一种或多种催化剂和一种或多种前体。术语“化合物”还预定包括如通过离解或电离作用处于活化状态或别的激励状态的一种或多种前体,氧化剂,还原剂,反应剂和催化剂,或它们的一种组合。
可以认为,用来在一个衬底表面上物理吸附,吸附、吸收,或化学吸附一单层反应剂的化学吸力是自限制的,其中在一规定的脉冲期间只有一个单层可以淀积到衬底表面上,因为衬底表面具有一有限的位置可供反应剂利用。一旦有限数的位置被反应剂占据,则将阻止反应剂的进一步淀积,循环可以重复到一个所希望的氮化钽层厚度。
为了清楚和便于说明起见,方法将进一步说成是它涉及用一种循环淀积技术淀积一种氮化钽(TaN)阻挡层。一种含钽化合物如五二甲胺基钽(PDMAT;Ta(NMe2)5)的脉冲可以通过阀242A由气源238加入。含钽化合物可以借助于一种载气提供,上述载气包括但不限于氦(He)、氩(Ar)、氮(N2)、氢(H2)及它们的组合。一种含氮化合物如氨的脉冲可以通过阀242A由气源239加入。载气也可以用来帮助输送含氮化合物。吹扫气体如氩可以通过阀242A和/或阀242B由气源240加入。在一种情况下,吹扫气流可以通过阀242A,242B由气源240连续提供,以便起含钽化合物脉冲和含氮化合物脉冲之间吹扫气体的作用,和在含钽化合物和含氮化合物二者的脉冲期间起一种载气作用。在一种情况下,通过两个气体导管250A、250B输送吹扫气体提供反应区264更完善的吹扫,而不是通过一个气体导管250A、250B提供的一种吹扫气体。在一种情况下,反应物气体可以通过一个气体导管250A、250B输送,因为一种反应物气体如一种含钽化合物或一种含氮化合物的流动均匀性不象吹扫气体,由于反应物在衬底结构表面上的自限制吸附过程的均匀性那样关键。在另一些实施例中,吹扫气体可以用脉冲提供。在另一些实施例中,吹扫气体可以用多于或少于两个气流提供。在另一些实施例中,一种含钽气体可以用一个以上气流(亦即两个或多个气流)提供。在另一实施例中,一种含氮气体可以用一个以上气流(亦即两个或多个气流)提供。
含钽化合物的一些例子,包括,但不限于,其它的有机金属化合物前体或它们的衍生物,如五乙基甲基胺钽(PEMAT:Ta[N(C2H5CH3)2]5),五二乙基胺钽(PDEAT;Ta(NEt2)5),及PEMAT、PDEAT或PDMAD的任何或所有的衍生物。另一些含钽化合物在不限制情况下包括TBTDET(Ta(NEt2)3NC4H9或C16H39N4Ta)和钽卤化物,例如TaX5,此外X是氟(F),溴(Br)或氯(Cl),和/或它们的衍生物。可以使用另一些含氮化合物,上述另一些含氮化合物包括,但不限于,NxHy,其中x和y是整数(比如,肼(N2H4)),二甲肼((CH3)2N2H4),特丁肼(C4H9N2H3,苯肼(C6H5N2H3),其它的肼衍生物,一种氮等离子体源(比如,N2,N2/H2,NH3,或一种N2H4等离子体),2,2’-偶氮异丁烷((CH3)6C2N2),乙基叠氮化物(C2H5N3),及其它合适的气体。吹扫气体的另一些例子包括,但不限于,氦(He),氮(N2),氢(H2),其它气体,及它们的组合。
氮化钽层形成说成是从在衬底上吸附一层含钽化合物开始,接着吸附一层含氮化合物。可供选择地,氮化钽层形成可以从在衬底上吸附一层含氮化合物开始,接着吸附一层含钽化合物。而且,在另一些实施例中,可以在各反应物气体的脉冲之间单独使用泵抽真空,以防各反应物气体混合。
含钽化合物每个脉冲的持续时间,含氮化合物每个脉冲的持续时间,及各反应物脉冲之间吹扫气体的持续时间都是可变的,并取决于所用淀积室的容积容量及与其连接的真空系统。例如,(1)一种气体的下面室压力将要求较长的脉冲时间;(2)一个较低的气体流速对室压力将要求一较长的时间,以便增加和稳定要求一较长的脉冲时间;及(3)一个大容积室采取充填时间越长,则室压稳定这种要求一较长脉冲时间越长。同样,每个脉冲之间的时间也是可变的,并取决于处理室的容积容量及与其连接的真空系统。一般,含钽化合物或含氮化合物的一个脉冲持续时间应足够长,以便吸附一层化合物。在一种情况下,当一种含氮化合物的一个脉冲进入时,一种含钽化合物的一个脉冲仍可以处在室中。一般,吹扫气体和/或泵抽真空的持续时间应长到足够防止含钽化合物的脉冲和含氮化合物的脉冲在反应区中混合在一起。
一般,含钽化合物一个脉冲时间为约1.0秒或更少和含氮化合物的一个脉冲时间为约1.0秒或更少,通常足够在一衬底结构上吸附交替的单层。含钽化合物脉冲和含氮化合物脉冲之间约1.0秒或更少的时间通常足够用于吹扫气体,不管是一种连续吹扫气体还是一种吹扫气体的脉冲,防止含钽化合物的脉冲和含氮化合物的脉冲在反应区中混合在一起。当然,反应物较长的脉冲时间可用来保证含钽化合物和含氮化合物的吸附,而反应物各脉冲之间的较长时间可用来保证除去反应副产物。
在淀积期间,衬底210可以保持在大约低于一选定的含钽化合物的热分解温度下。在一低于约100乇,优选的是低于约50乇的室压下,本文所确定的与含钽化合物一起用的示例性加热温度范围大约是在约20℃和约500℃之间。当含钽气体是PDMAT时,加热温度优选的是在约100℃和约300℃之间,更优选的是在约175℃和250℃之间,而室压是在约1.0和约5.0乇之间。在另一些实施例中,应该理解,其它的温度和压力也可以用。例如,可以利用一个超过热分解温度的温度。然而,温度应如此选定,以便高于50%的淀积活性是通过吸附处理。在另一个例子中,可以利用一个高于热分解温度的温度,其中在每个前体淀积期间的分解量如此加以限制,以使生长模式将类似于原子层淀积生长模式。
通过循环淀积来淀积氮化钽层的一个示例性方法,包括通过阀242A从气源238以一个在约100sccm和约1000sccm之间,优选的是在100sccm和约400sccm之间的一个流速,提供五二甲胺基钽(PDMAT)脉冲,脉冲时间为约0.5秒或更少,约0.1秒或更少,或者由于反应区264的较小容积为约0.05秒或更少。氨气脉冲可以通过阀242B从气源239以一个在约100sccm和约1000sccm之间,优选的是在200sccm和约600sccm之间的流速提供,脉冲时间为约0.5秒或更少,约0.1秒或更少,或者由于反应区264的较小容积为约0.05秒或更少。通过阀242A,242B从气源240可以连续地提供在约100sccm和约1000sccm之间,优选的是在约100sccm和约400sccm之间的流速下的氩吹扫气体。含钽化合物脉冲和含氮化合物的脉冲之间的时间可以是约0.5秒或更少,约0.1秒或更少,或者由于反应区264较小的容积为0.07秒或更少。可以认为,为用一种反应物气体和/或一种吹扫气体充满反应区264,需要一脉冲时间为约0.016秒或更多。在约1.0和约5.0乇之间的室压下,加热器温度优选的是保持在约100℃和约300℃之间。这种方法提供一种厚度在每个循环约0.5和约10的氮化钽层。可以重复交错的顺序直至达到所希望的厚度为止。
在一个实施例中,层如一个氮化钽层淀积到侧壁覆盖厚度为约50或更少。在另一个实施例中,上述层淀积到覆盖侧壁上厚度为约20或更少。在还有另一个实施例中,上述层淀积到侧壁覆盖厚度为约10或更少。具有厚度约为10或更少的氮化钽层在作为防止铜扩散的阻挡层应用时,被认为是一个足够的厚度。在一种情况下,可以用一种薄阻挡层来有利于充填亚微米(比如小于约0.15μm)和具有高纵横比(比如大于5-1)的更小部件。当然,可以使用具有侧壁覆盖厚度大于50的一层。
当在一个衬底上吸附一单层反应物时,上面已经说明了循环淀积的一些实施例。本发明还包括其中,反应物吸附到多于或少于一个单层上的实施例。本发明还包括其中反应物不以一种自限制方式淀积的一些实施例。本发明还包括其中淀积主要是一种化学汽相淀积法产生的一些实施例,在上述化学汽相淀积法中,反应物依次或同时输送。
当利用两种反应物的脉冲淀积一种氮化钽二元化合物时,上面已经说明了循环淀积的一些实施例。在淀积其它元素或化合物时,也可以利用两种或多种反应物的脉冲。
尽管上述内容是针对本发明的优选实施例,但在不脱离本发明基本范围的情况下,也可以产生本发明的其它和另一些实施例,并且本发明的范围由下面的权利要求确定。
Claims (20)
1.一种室,其包括:
一个衬底支承件,所述衬底支承件具有一个接收衬底的表面;
一个室盖,所述室盖包括一个逐渐扩展的通道和一个底部表面,上述逐渐扩展的通道从室盖的中央部分向下延伸,而上述底部表面从通道延伸到室盖的周边部分,底部表面加工成一定形状和尺寸,以便基本上盖住接收衬底的表面;
一个或多个阀,上述一个或多个阀与逐渐扩展的通道成流体连通;及
一个或多个气源,上述一个或多个气源与每个阀成流体连通。
2.如权利要求1所述的室,还包括一个或多个气体导管,上述气体管道流体式连接一个或多个阀及通道,并垂直于通道的纵向轴线设置。
3.如权利要求2所述的室,其中,一个或多个气体导管与通道的纵向轴线成一个角度设置。
4.如权利要求1所述的室,其中,室盖的底部表面包括一个锥形表面,该锥形表面从覆盖件的中央部分延伸,上述锥形表面包括一个从一组表面中选定的表面,上述一组表面包括一种笔直表面,一种凹形表面,一种凸形表面,或它们的组合。
5.如权利要求1所述的室,其中,通道成形为一种截锥体。
6.如权利要求1所述的室,其中,通道包括一个上面部分和一个下面部分,上面部分具有一比下面部分小的内径。
7.如权利要求1所述的室,其中,将一个共同的吹扫气源连接到每个阀上,和其中将分开的反应物气源连接到每个阀上。
8.如权利要求1所述的室,还包括一个节流口,上述节流口邻近底部表面的周边设置在室盖上。
9.如权利要求1所述的室,其中,反应区的截面积从通道到反应区的周边基本上是均匀的。
10.一种室,其包括:
一个衬底支承件,所述衬底支承件具有一个接收衬底的表面;
一个室盖,所述室盖包括一个扩展通道和包括一个锥形的底部表面,上述扩展通道从室盖的中央部分延伸,而上述锥形的底部表面从扩展通道延伸到室盖的周边部分;
一个或多个气体导管,上述气体导管围绕扩展通道的上面部分设置,其中,一个或多个气体导管与扩展通道的中心呈一个角度设置;
一个或多个阀,上述一个或多个阀连接到逐渐扩展的通道上;及
一个节流口,上述节流口邻近锥形底部表面的周长设置在室盖上。
11.如权利要求10所述的室,其中,一个或多个气体导管垂直于扩展通道的纵向轴线设置。
12.如权利要求10所述的室,其中,一个或多个气体导管与扩展通道的纵向轴线成一个角度设置。
13.如权利要求10所述的方法,其中,反应区的截面积从通道到反应区的周边基本上是均匀的。
14.如权利要求9所述的室,其中,一个或多个阀安装在室盖上。
15.如权利要求9所述的室,其中,一个或多个阀安装在室体的下方。
16.如权利要求9所述的室,还包括一个罐,上述罐适合于装一种含钽化合物,罐处于约60℃和约70℃之间的一个温度下。
17.将各种气体输送到一个衬底处理室中衬底上的方法,所述方法包括:
将一种或多种气体跃过衬底的整个中央部分范围沿一个初始圆形方向提供到衬底处理室中;
通过非绝热膨胀降低各气体的速度;
将各种气体提供给衬底的中央部分;及
以一种基本上均匀的速度使各种气体径向上从衬底的中央部分向衬底的周边部分跨过衬底。
18.如权利要求17所述的方法,其中,基本上均匀的速度包括最大速度与最小速度的比值为约2.0或更小。
19.如权利要求17所述的方法,还包括在一向下流动路线中以一个第二速度朝向衬底中央部分提供各种气体,上述第二速度小于第一速度。
20.如权利要求17所述的方法,还包括以一个第三速度从衬底的边缘朝一径向方向上提供各种气体,其中第三速度大于基本上均匀的速度。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34608601P | 2001-10-26 | 2001-10-26 | |
US60/346,086 | 2001-10-26 | ||
US10/032,284 US6916398B2 (en) | 2001-10-26 | 2001-12-21 | Gas delivery apparatus and method for atomic layer deposition |
US10/032,284 | 2001-12-21 | ||
US39723002P | 2002-07-19 | 2002-07-19 | |
US60/397,230 | 2002-07-19 | ||
PCT/US2002/034553 WO2003035927A2 (en) | 2001-10-26 | 2002-10-25 | Gas delivery apparatus for atomic layer deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1774525A true CN1774525A (zh) | 2006-05-17 |
CN1774525B CN1774525B (zh) | 2010-06-16 |
Family
ID=36760924
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN028239032A Expired - Lifetime CN1774525B (zh) | 2001-10-26 | 2002-10-25 | 用于原子层淀积的气体输送装置 |
CNB2007101017141A Expired - Lifetime CN100524692C (zh) | 2001-10-26 | 2002-10-25 | 在衬底上形成金属互连的方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007101017141A Expired - Lifetime CN100524692C (zh) | 2001-10-26 | 2002-10-25 | 在衬底上形成金属互连的方法 |
Country Status (3)
Country | Link |
---|---|
US (10) | US6916398B2 (zh) |
KR (1) | KR20040058239A (zh) |
CN (2) | CN1774525B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102144281A (zh) * | 2008-09-08 | 2011-08-03 | 应用材料股份有限公司 | 原位腔室处理与沉积工艺 |
CN101528973B (zh) * | 2006-10-24 | 2012-04-25 | 应用材料公司 | 用于原子层沉积的涡流室盖 |
CN101809196B (zh) * | 2007-09-26 | 2013-07-10 | 伊斯曼柯达公司 | 用于形成薄膜的沉积系统 |
US8778079B2 (en) | 2007-10-11 | 2014-07-15 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
CN108060410A (zh) * | 2017-12-15 | 2018-05-22 | 浙江晶盛机电股份有限公司 | 用于平板式pecvd的进气管道保护结构 |
CN110662858A (zh) * | 2017-02-02 | 2020-01-07 | 弗谢沃洛德·弗拉基米罗维奇·龙丁 | 将气体供应至反应器中以生长基于iii族金属氮化物的外延结构的方法、以及用于实施该方法的装置 |
CN112378603A (zh) * | 2020-11-18 | 2021-02-19 | 北京自动化控制设备研究所 | 原子气室的漏率检测方法及系统 |
Families Citing this family (773)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6974766B1 (en) | 1998-10-01 | 2005-12-13 | Applied Materials, Inc. | In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
US8696875B2 (en) | 1999-10-08 | 2014-04-15 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
US10047430B2 (en) | 1999-10-08 | 2018-08-14 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
US6620723B1 (en) * | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US6936538B2 (en) | 2001-07-16 | 2005-08-30 | Applied Materials, Inc. | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics |
US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
US7964505B2 (en) | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
US7732327B2 (en) | 2000-06-28 | 2010-06-08 | Applied Materials, Inc. | Vapor deposition of tungsten materials |
US6451692B1 (en) * | 2000-08-18 | 2002-09-17 | Micron Technology, Inc. | Preheating of chemical vapor deposition precursors |
US20020036780A1 (en) * | 2000-09-27 | 2002-03-28 | Hiroaki Nakamura | Image processing apparatus |
US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6596643B2 (en) * | 2001-05-07 | 2003-07-22 | Applied Materials, Inc. | CVD TiSiN barrier for copper integration |
US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
WO2003029515A2 (en) * | 2001-07-16 | 2003-04-10 | Applied Materials, Inc. | Formation of composite tungsten films |
JP2005504885A (ja) * | 2001-07-25 | 2005-02-17 | アプライド マテリアルズ インコーポレイテッド | 新規なスパッタ堆積方法を使用したバリア形成 |
US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
US20090004850A1 (en) | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
US7085616B2 (en) * | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US6718126B2 (en) * | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
US6936906B2 (en) * | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
US7049226B2 (en) * | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
TW589684B (en) * | 2001-10-10 | 2004-06-01 | Applied Materials Inc | Method for depositing refractory metal layers employing sequential deposition techniques |
US6916398B2 (en) * | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US7780789B2 (en) * | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Vortex chamber lids for atomic layer deposition |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US7204886B2 (en) * | 2002-11-14 | 2007-04-17 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
US20080102203A1 (en) * | 2001-10-26 | 2008-05-01 | Dien-Yeh Wu | Vortex chamber lids for atomic layer deposition |
US7081271B2 (en) * | 2001-12-07 | 2006-07-25 | Applied Materials, Inc. | Cyclical deposition of refractory metal silicon nitride |
US6939801B2 (en) * | 2001-12-21 | 2005-09-06 | Applied Materials, Inc. | Selective deposition of a barrier layer on a dielectric material |
AU2003238853A1 (en) * | 2002-01-25 | 2003-09-02 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US6866746B2 (en) * | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US6911391B2 (en) * | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US6998014B2 (en) * | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US6833161B2 (en) | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
US6972267B2 (en) * | 2002-03-04 | 2005-12-06 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
US7220312B2 (en) * | 2002-03-13 | 2007-05-22 | Micron Technology, Inc. | Methods for treating semiconductor substrates |
US6846516B2 (en) * | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
US20030235961A1 (en) * | 2002-04-17 | 2003-12-25 | Applied Materials, Inc. | Cyclical sequential deposition of multicomponent films |
US6861094B2 (en) * | 2002-04-25 | 2005-03-01 | Micron Technology, Inc. | Methods for forming thin layers of materials on micro-device workpieces |
US6838114B2 (en) * | 2002-05-24 | 2005-01-04 | Micron Technology, Inc. | Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces |
US7041335B2 (en) * | 2002-06-04 | 2006-05-09 | Applied Materials, Inc. | Titanium tantalum nitride silicide layer |
US20030232501A1 (en) * | 2002-06-14 | 2003-12-18 | Kher Shreyas S. | Surface pre-treatment for enhancement of nucleation of high dielectric constant materials |
US6858547B2 (en) * | 2002-06-14 | 2005-02-22 | Applied Materials, Inc. | System and method for forming a gate dielectric |
US7067439B2 (en) * | 2002-06-14 | 2006-06-27 | Applied Materials, Inc. | ALD metal oxide deposition process using direct oxidation |
US7118783B2 (en) * | 2002-06-26 | 2006-10-10 | Micron Technology, Inc. | Methods and apparatus for vapor processing of micro-device workpieces |
US6821347B2 (en) * | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
US6838125B2 (en) * | 2002-07-10 | 2005-01-04 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
US7186385B2 (en) * | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
US7524374B2 (en) | 2002-07-17 | 2009-04-28 | Applied Materials, Inc. | Method and apparatus for generating a precursor for a semiconductor processing system |
KR100476370B1 (ko) * | 2002-07-19 | 2005-03-16 | 주식회사 하이닉스반도체 | 배치형 원자층증착장치 및 그의 인시튜 세정 방법 |
US6915592B2 (en) * | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
US7504006B2 (en) | 2002-08-01 | 2009-03-17 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
US6753271B2 (en) * | 2002-08-15 | 2004-06-22 | Micron Technology, Inc. | Atomic layer deposition methods |
US20050181212A1 (en) * | 2004-02-17 | 2005-08-18 | General Electric Company | Composite articles having diffusion barriers and devices incorporating the same |
US20040069227A1 (en) * | 2002-10-09 | 2004-04-15 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
US6905737B2 (en) * | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
US7540920B2 (en) * | 2002-10-18 | 2009-06-02 | Applied Materials, Inc. | Silicon-containing layer deposition with silicon compounds |
JP3866655B2 (ja) * | 2002-12-26 | 2007-01-10 | 励起 渡辺 | 処理装置及び処理方法 |
US7262133B2 (en) * | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
US7244683B2 (en) * | 2003-01-07 | 2007-07-17 | Applied Materials, Inc. | Integration of ALD/CVD barriers with porous low k materials |
US20040175926A1 (en) * | 2003-03-07 | 2004-09-09 | Advanced Micro Devices, Inc. | Method for manufacturing a semiconductor component having a barrier-lined opening |
US20040177813A1 (en) | 2003-03-12 | 2004-09-16 | Applied Materials, Inc. | Substrate support lift mechanism |
US20040180551A1 (en) * | 2003-03-13 | 2004-09-16 | Biles Peter John | Carbon hard mask for aluminum interconnect fabrication |
US7342984B1 (en) | 2003-04-03 | 2008-03-11 | Zilog, Inc. | Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character |
US20040198069A1 (en) * | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
JP5342110B2 (ja) * | 2003-05-27 | 2013-11-13 | アプライド マテリアルズ インコーポレイテッド | 前駆物質を含むソースキャニスタ及びこれを用いて特徴部を充填する方法 |
WO2004114398A1 (en) * | 2003-06-13 | 2004-12-29 | Applied Materials, Inc. | Integration of ald tantalum nitride for copper metallization |
WO2004112114A1 (ja) * | 2003-06-16 | 2004-12-23 | Tokyo Electron Limited | 成膜方法、半導体装置の製造方法、半導体装置および成膜装置 |
KR20060079144A (ko) * | 2003-06-18 | 2006-07-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 배리어 물질의 원자층 증착 |
US6880592B2 (en) * | 2003-06-26 | 2005-04-19 | Advanced Technology Materials, Inc. | Canister guard |
US20050037613A1 (en) * | 2003-08-14 | 2005-02-17 | Stephan Grunow | Diffusion barrier for copper lines in integrated circuits |
US8152922B2 (en) * | 2003-08-29 | 2012-04-10 | Asm America, Inc. | Gas mixer and manifold assembly for ALD reactor |
US7282239B2 (en) * | 2003-09-18 | 2007-10-16 | Micron Technology, Inc. | Systems and methods for depositing material onto microfeature workpieces in reaction chambers |
US7169713B2 (en) * | 2003-09-26 | 2007-01-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Atomic layer deposition (ALD) method with enhanced deposition rate |
US7166528B2 (en) * | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
US8501594B2 (en) * | 2003-10-10 | 2013-08-06 | Applied Materials, Inc. | Methods for forming silicon germanium layers |
US7647886B2 (en) * | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
US8536492B2 (en) * | 2003-10-27 | 2013-09-17 | Applied Materials, Inc. | Processing multilayer semiconductors with multiple heat sources |
US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
TW200524018A (en) * | 2003-11-20 | 2005-07-16 | Ulvac Inc | Method of cleaning surface of semiconductor substrate, method of manufacturing film, method of manufacturing semiconductor device and semiconductor device |
US20050109276A1 (en) * | 2003-11-25 | 2005-05-26 | Applied Materials, Inc. | Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber |
US7258892B2 (en) | 2003-12-10 | 2007-08-21 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
US7906393B2 (en) | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
US20050230350A1 (en) | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
US7780793B2 (en) * | 2004-02-26 | 2010-08-24 | Applied Materials, Inc. | Passivation layer formation by plasma clean process to reduce native oxide growth |
US20060051966A1 (en) * | 2004-02-26 | 2006-03-09 | Applied Materials, Inc. | In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber |
US7445810B2 (en) * | 2004-04-15 | 2008-11-04 | Hewlett-Packard Development Company, L.P. | Method of making a tantalum layer and apparatus using a tantalum layer |
US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US20050252449A1 (en) * | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US8323754B2 (en) | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
US7211507B2 (en) * | 2004-06-02 | 2007-05-01 | International Business Machines Corporation | PE-ALD of TaN diffusion barrier region on low-k materials |
DE602005016933D1 (de) * | 2004-06-28 | 2009-11-12 | Cambridge Nanotech Inc | Atomlagenabscheidungssystem und -verfahren |
US7605469B2 (en) * | 2004-06-30 | 2009-10-20 | Intel Corporation | Atomic layer deposited tantalum containing adhesion layer |
US7241686B2 (en) * | 2004-07-20 | 2007-07-10 | Applied Materials, Inc. | Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA |
US20060019032A1 (en) * | 2004-07-23 | 2006-01-26 | Yaxin Wang | Low thermal budget silicon nitride formation for advance transistor fabrication |
KR100552820B1 (ko) * | 2004-09-17 | 2006-02-21 | 동부아남반도체 주식회사 | 반도체 소자의 제조 방법 |
US20090098290A1 (en) * | 2004-09-27 | 2009-04-16 | Mikio Watanabe | Process for formation of copper-containing films |
JP4783561B2 (ja) * | 2004-09-27 | 2011-09-28 | 株式会社アルバック | 銅配線の形成方法 |
US20060084283A1 (en) * | 2004-10-20 | 2006-04-20 | Paranjpe Ajit P | Low temperature sin deposition methods |
US7560352B2 (en) * | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
US7682940B2 (en) * | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
US7078810B2 (en) * | 2004-12-01 | 2006-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and fabrication method thereof |
US7429402B2 (en) * | 2004-12-10 | 2008-09-30 | Applied Materials, Inc. | Ruthenium as an underlayer for tungsten film deposition |
US20060199386A1 (en) * | 2004-12-27 | 2006-09-07 | Jim-Jey Huang | Semiconductor device with low-resistance inlaid copper/barrier interconnects and method for manufacturing the same |
JP4934595B2 (ja) | 2005-01-18 | 2012-05-16 | エーエスエム アメリカ インコーポレイテッド | 薄膜成長用反応装置 |
US7235492B2 (en) | 2005-01-31 | 2007-06-26 | Applied Materials, Inc. | Low temperature etchant for treatment of silicon-containing surfaces |
CN101115864B (zh) * | 2005-02-10 | 2010-10-13 | 东京毅力科创株式会社 | 薄膜的叠层结构、其形成方法、成膜装置和存储介质 |
US7265048B2 (en) | 2005-03-01 | 2007-09-04 | Applied Materials, Inc. | Reduction of copper dewetting by transition metal deposition |
JP4931173B2 (ja) * | 2005-03-03 | 2012-05-16 | 株式会社アルバック | タンタル窒化物膜の形成方法 |
JP4931174B2 (ja) * | 2005-03-03 | 2012-05-16 | 株式会社アルバック | タンタル窒化物膜の形成方法 |
US20060246699A1 (en) * | 2005-03-18 | 2006-11-02 | Weidman Timothy W | Process for electroless copper deposition on a ruthenium seed |
US7651934B2 (en) | 2005-03-18 | 2010-01-26 | Applied Materials, Inc. | Process for electroless copper deposition |
US8486845B2 (en) * | 2005-03-21 | 2013-07-16 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
US7351285B2 (en) * | 2005-03-29 | 2008-04-01 | Tokyo Electron Limited | Method and system for forming a variable thickness seed layer |
WO2006106767A1 (ja) * | 2005-03-30 | 2006-10-12 | Matsushita Electric Industrial Co., Ltd. | 伝送線路対及び伝送線路群 |
US8298336B2 (en) * | 2005-04-01 | 2012-10-30 | Lam Research Corporation | High strip rate downstream chamber |
US7662729B2 (en) | 2005-04-28 | 2010-02-16 | Micron Technology, Inc. | Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer |
US20060286774A1 (en) * | 2005-06-21 | 2006-12-21 | Applied Materials. Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7648927B2 (en) | 2005-06-21 | 2010-01-19 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7651955B2 (en) * | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7550381B2 (en) * | 2005-07-18 | 2009-06-23 | Applied Materials, Inc. | Contact clean by remote plasma and repair of silicide surface |
US20070020890A1 (en) * | 2005-07-19 | 2007-01-25 | Applied Materials, Inc. | Method and apparatus for semiconductor processing |
US20070049043A1 (en) * | 2005-08-23 | 2007-03-01 | Applied Materials, Inc. | Nitrogen profile engineering in HI-K nitridation for device performance enhancement and reliability improvement |
US7402534B2 (en) | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
US20070054046A1 (en) * | 2005-09-06 | 2007-03-08 | Tokyo Electron Limited | Method of forming a tantalum-containing layer from a metalorganic precursor |
US20070054047A1 (en) * | 2005-09-06 | 2007-03-08 | Tokyo Electron Limited | Method of forming a tantalum-containing layer from a metalorganic precursor |
US20070065576A1 (en) * | 2005-09-09 | 2007-03-22 | Vikram Singh | Technique for atomic layer deposition |
US20070082507A1 (en) * | 2005-10-06 | 2007-04-12 | Applied Materials, Inc. | Method and apparatus for the low temperature deposition of doped silicon nitride films |
US7464917B2 (en) * | 2005-10-07 | 2008-12-16 | Appiled Materials, Inc. | Ampoule splash guard apparatus |
US7884032B2 (en) * | 2005-10-28 | 2011-02-08 | Applied Materials, Inc. | Thin film deposition |
US8454804B2 (en) * | 2005-10-28 | 2013-06-04 | Applied Materials Inc. | Protective offset sputtering |
US8460519B2 (en) * | 2005-10-28 | 2013-06-11 | Applied Materials Inc. | Protective offset sputtering |
US7850779B2 (en) | 2005-11-04 | 2010-12-14 | Applied Materisals, Inc. | Apparatus and process for plasma-enhanced atomic layer deposition |
US7942970B2 (en) * | 2005-12-20 | 2011-05-17 | Momentive Performance Materials Inc. | Apparatus for making crystalline composition |
US8216374B2 (en) * | 2005-12-22 | 2012-07-10 | Applied Materials, Inc. | Gas coupler for substrate processing chamber |
KR100717501B1 (ko) * | 2005-12-29 | 2007-05-14 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속 배선 형성 방법 |
WO2007084493A2 (en) * | 2006-01-19 | 2007-07-26 | Asm America, Inc. | High temperature ald inlet manifold |
US20070169687A1 (en) * | 2006-01-26 | 2007-07-26 | Caracal, Inc. | Silicon carbide formation by alternating pulses |
US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
US20070193637A1 (en) * | 2006-02-23 | 2007-08-23 | Micron Technology, Inc. | Systems and methods for controlling fluid flow |
US7645484B2 (en) * | 2006-03-31 | 2010-01-12 | Tokyo Electron Limited | Method of forming a metal carbide or metal carbonitride film having improved adhesion |
US7674337B2 (en) * | 2006-04-07 | 2010-03-09 | Applied Materials, Inc. | Gas manifolds for use during epitaxial film formation |
US20070252299A1 (en) * | 2006-04-27 | 2007-11-01 | Applied Materials, Inc. | Synchronization of precursor pulsing and wafer rotation |
US20070259111A1 (en) * | 2006-05-05 | 2007-11-08 | Singh Kaushal K | Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film |
US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
US20080026149A1 (en) * | 2006-05-31 | 2008-01-31 | Asm America, Inc. | Methods and systems for selectively depositing si-containing films using chloropolysilanes |
US7501355B2 (en) * | 2006-06-29 | 2009-03-10 | Applied Materials, Inc. | Decreasing the etch rate of silicon nitride by carbon addition |
JP5558815B2 (ja) * | 2006-06-30 | 2014-07-23 | アプライド マテリアルズ インコーポレイテッド | ナノ結晶の形成 |
JP2008034648A (ja) * | 2006-07-28 | 2008-02-14 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
KR101160930B1 (ko) | 2006-07-31 | 2012-06-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 카본-함유 실리콘 에피택셜 층을 형성하는 방법 |
US7588980B2 (en) * | 2006-07-31 | 2009-09-15 | Applied Materials, Inc. | Methods of controlling morphology during epitaxial layer formation |
US7727908B2 (en) | 2006-08-03 | 2010-06-01 | Micron Technology, Inc. | Deposition of ZrA1ON films |
JP5125031B2 (ja) * | 2006-08-29 | 2013-01-23 | 東京エレクトロン株式会社 | 真空処理装置及び真空処理方法 |
US7776765B2 (en) | 2006-08-31 | 2010-08-17 | Micron Technology, Inc. | Tantalum silicon oxynitride high-k dielectrics and metal gates |
US7544604B2 (en) | 2006-08-31 | 2009-06-09 | Micron Technology, Inc. | Tantalum lanthanide oxynitride films |
US7759747B2 (en) | 2006-08-31 | 2010-07-20 | Micron Technology, Inc. | Tantalum aluminum oxynitride high-κ dielectric |
US7563730B2 (en) | 2006-08-31 | 2009-07-21 | Micron Technology, Inc. | Hafnium lanthanide oxynitride films |
US7432548B2 (en) | 2006-08-31 | 2008-10-07 | Micron Technology, Inc. | Silicon lanthanide oxynitride films |
US7605030B2 (en) | 2006-08-31 | 2009-10-20 | Micron Technology, Inc. | Hafnium tantalum oxynitride high-k dielectric and metal gates |
US7521379B2 (en) * | 2006-10-09 | 2009-04-21 | Applied Materials, Inc. | Deposition and densification process for titanium nitride barrier layers |
US7775508B2 (en) * | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
US7692222B2 (en) * | 2006-11-07 | 2010-04-06 | Raytheon Company | Atomic layer deposition in the formation of gate structures for III-V semiconductor |
US7837790B2 (en) * | 2006-12-01 | 2010-11-23 | Applied Materials, Inc. | Formation and treatment of epitaxial layer containing silicon and carbon |
US7741200B2 (en) * | 2006-12-01 | 2010-06-22 | Applied Materials, Inc. | Formation and treatment of epitaxial layer containing silicon and carbon |
US20080132039A1 (en) * | 2006-12-01 | 2008-06-05 | Yonah Cho | Formation and treatment of epitaxial layer containing silicon and carbon |
US8394196B2 (en) * | 2006-12-12 | 2013-03-12 | Applied Materials, Inc. | Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon |
US7897495B2 (en) * | 2006-12-12 | 2011-03-01 | Applied Materials, Inc. | Formation of epitaxial layer containing silicon and carbon |
US7960236B2 (en) * | 2006-12-12 | 2011-06-14 | Applied Materials, Inc. | Phosphorus containing Si epitaxial layers in N-type source/drain junctions |
US20080138955A1 (en) * | 2006-12-12 | 2008-06-12 | Zhiyuan Ye | Formation of epitaxial layer containing silicon |
US20080145536A1 (en) * | 2006-12-13 | 2008-06-19 | Applied Materials, Inc. | METHOD AND APPARATUS FOR LOW TEMPERATURE AND LOW K SiBN DEPOSITION |
US8026605B2 (en) * | 2006-12-14 | 2011-09-27 | Lam Research Corporation | Interconnect structure and method of manufacturing a damascene structure |
US20080206987A1 (en) * | 2007-01-29 | 2008-08-28 | Gelatos Avgerinos V | Process for tungsten nitride deposition by a temperature controlled lid assembly |
US9064960B2 (en) * | 2007-01-31 | 2015-06-23 | Applied Materials, Inc. | Selective epitaxy process control |
US7589020B2 (en) * | 2007-05-02 | 2009-09-15 | Tokyo Electron Limited | Method for depositing titanium nitride films for semiconductor manufacturing |
US7776733B2 (en) * | 2007-05-02 | 2010-08-17 | Tokyo Electron Limited | Method for depositing titanium nitride films for semiconductor manufacturing |
KR20090018290A (ko) * | 2007-08-17 | 2009-02-20 | 에이에스엠지니텍코리아 주식회사 | 증착 장치 |
KR101046520B1 (ko) * | 2007-09-07 | 2011-07-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 내부 챔버 상의 부산물 막 증착을 제어하기 위한 pecvd 시스템에서의 소스 가스 흐름 경로 제어 |
US7678298B2 (en) * | 2007-09-25 | 2010-03-16 | Applied Materials, Inc. | Tantalum carbide nitride materials by vapor deposition processes |
US7585762B2 (en) * | 2007-09-25 | 2009-09-08 | Applied Materials, Inc. | Vapor deposition processes for tantalum carbide nitride materials |
US20090087550A1 (en) * | 2007-09-27 | 2009-04-02 | Tokyo Electron Limited | Sequential flow deposition of a tungsten silicide gate electrode film |
US7824743B2 (en) * | 2007-09-28 | 2010-11-02 | Applied Materials, Inc. | Deposition processes for titanium nitride barrier and aluminum |
US7776698B2 (en) | 2007-10-05 | 2010-08-17 | Applied Materials, Inc. | Selective formation of silicon carbon epitaxial layer |
KR20100072316A (ko) * | 2007-10-19 | 2010-06-30 | 엠케이에스 인스트루먼츠, 인코포레이티드 | 높은 가스 유량 공정을 위한 환형 플라즈마 챔버 |
US20090107955A1 (en) * | 2007-10-26 | 2009-04-30 | Tiner Robin L | Offset liner for chamber evacuation |
US8137463B2 (en) * | 2007-12-19 | 2012-03-20 | Applied Materials, Inc. | Dual zone gas injection nozzle |
US7659158B2 (en) | 2008-03-31 | 2010-02-09 | Applied Materials, Inc. | Atomic layer deposition processes for non-volatile memory devices |
US8291857B2 (en) * | 2008-07-03 | 2012-10-23 | Applied Materials, Inc. | Apparatuses and methods for atomic layer deposition |
US8187381B2 (en) * | 2008-08-22 | 2012-05-29 | Applied Materials, Inc. | Process gas delivery for semiconductor process chamber |
US20100062149A1 (en) | 2008-09-08 | 2010-03-11 | Applied Materials, Inc. | Method for tuning a deposition rate during an atomic layer deposition process |
US8425977B2 (en) * | 2008-09-29 | 2013-04-23 | Applied Materials, Inc. | Substrate processing chamber with off-center gas delivery funnel |
US8146896B2 (en) | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Chemical precursor ampoule for vapor deposition processes |
US9328417B2 (en) * | 2008-11-01 | 2016-05-03 | Ultratech, Inc. | System and method for thin film deposition |
US9175388B2 (en) * | 2008-11-01 | 2015-11-03 | Ultratech, Inc. | Reaction chamber with removable liner |
US20100120245A1 (en) * | 2008-11-07 | 2010-05-13 | Agus Sofian Tjandra | Plasma and thermal anneal treatment to improve oxidation resistance of metal-containing films |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US20100183825A1 (en) * | 2008-12-31 | 2010-07-22 | Cambridge Nanotech Inc. | Plasma atomic layer deposition system and method |
US8557702B2 (en) | 2009-02-02 | 2013-10-15 | Asm America, Inc. | Plasma-enhanced atomic layers deposition of conductive material over dielectric layers |
FI123539B (fi) * | 2009-02-09 | 2013-06-28 | Beneq Oy | ALD-reaktori, menetelmä ALD-reaktorin lataamiseksi ja tuotantolinja |
WO2010103953A1 (ja) * | 2009-03-13 | 2010-09-16 | 東京エレクトロン株式会社 | 基板処理装置、トラップ装置、基板処理装置の制御方法及びトラップ装置の制御方法 |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8307854B1 (en) | 2009-05-14 | 2012-11-13 | Vistadeltek, Inc. | Fluid delivery substrates for building removable standard fluid delivery sticks |
WO2010144541A2 (en) * | 2009-06-10 | 2010-12-16 | Vistadeltek, Llc | Extreme flow rate and/or high temperature fluid delivery substrates |
US8107274B2 (en) * | 2009-07-30 | 2012-01-31 | Chrong-Jung Lin | Variable and reversible resistive element, non-volatile memory device and methods for operating and manufacturing the non-volatile memory device |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US20110097487A1 (en) * | 2009-10-27 | 2011-04-28 | Kerr Roger S | Fluid distribution manifold including bonded plates |
FI20096380A0 (fi) * | 2009-12-22 | 2009-12-22 | Beneq Oy | Ohutkalvoaurinkokenno, valmistusmenetelmä ja käyttö |
JP5601974B2 (ja) * | 2010-01-19 | 2014-10-08 | パナソニック株式会社 | 半導体装置及びその製造方法 |
JP5445252B2 (ja) * | 2010-03-16 | 2014-03-19 | 東京エレクトロン株式会社 | 成膜装置 |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
US9443753B2 (en) * | 2010-07-30 | 2016-09-13 | Applied Materials, Inc. | Apparatus for controlling the flow of a gas in a process chamber |
WO2012039833A2 (en) | 2010-09-24 | 2012-03-29 | Applied Materials, Inc. | Low temperature silicon carbide deposition process |
CN102002666B (zh) * | 2010-10-22 | 2012-06-27 | 哈尔滨工业大学 | 一种铜互联用氮化钽扩散阻挡层的制备方法 |
US8835308B2 (en) * | 2010-12-21 | 2014-09-16 | Applied Materials, Inc. | Methods for depositing materials in high aspect ratio features |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8771539B2 (en) | 2011-02-22 | 2014-07-08 | Applied Materials, Inc. | Remotely-excited fluorine and water vapor etch |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
JP5661523B2 (ja) * | 2011-03-18 | 2015-01-28 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
US8524600B2 (en) | 2011-03-31 | 2013-09-03 | Applied Materials, Inc. | Post deposition treatments for CVD cobalt films |
US9695510B2 (en) * | 2011-04-21 | 2017-07-04 | Kurt J. Lesker Company | Atomic layer deposition apparatus and process |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US8771536B2 (en) | 2011-08-01 | 2014-07-08 | Applied Materials, Inc. | Dry-etch for silicon-and-carbon-containing films |
US8679982B2 (en) | 2011-08-26 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and oxygen |
US8679983B2 (en) | 2011-09-01 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen |
US8927390B2 (en) | 2011-09-26 | 2015-01-06 | Applied Materials, Inc. | Intrench profile |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9574268B1 (en) | 2011-10-28 | 2017-02-21 | Asm America, Inc. | Pulsed valve manifold for atomic layer deposition |
WO2013070436A1 (en) | 2011-11-08 | 2013-05-16 | Applied Materials, Inc. | Methods of reducing substrate dislocation during gapfill processing |
US9941100B2 (en) * | 2011-12-16 | 2018-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Adjustable nozzle for plasma deposition and a method of controlling the adjustable nozzle |
US9388492B2 (en) | 2011-12-27 | 2016-07-12 | Asm America, Inc. | Vapor flow control apparatus for atomic layer deposition |
US8815344B2 (en) * | 2012-03-14 | 2014-08-26 | Applied Materials, Inc. | Selective atomic layer depositions |
US9076661B2 (en) | 2012-04-13 | 2015-07-07 | Applied Materials, Inc. | Methods for manganese nitride integration |
US9048294B2 (en) | 2012-04-13 | 2015-06-02 | Applied Materials, Inc. | Methods for depositing manganese and manganese nitrides |
TWI554636B (zh) | 2012-04-25 | 2016-10-21 | 應用材料股份有限公司 | 由金屬脒鹽前驅物製造介電膜的方法 |
US9598766B2 (en) | 2012-05-27 | 2017-03-21 | Air Products And Chemicals, Inc. | Vessel with filter |
US10233541B2 (en) | 2012-06-29 | 2019-03-19 | Applied Materials, Inc. | Deposition of films containing alkaline earth metals |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US8736056B2 (en) * | 2012-07-31 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device for reducing contact resistance of a metal |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US8911826B2 (en) * | 2012-08-02 | 2014-12-16 | Asm Ip Holding B.V. | Method of parallel shift operation of multiple reactors |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9034770B2 (en) | 2012-09-17 | 2015-05-19 | Applied Materials, Inc. | Differential silicon oxide etch |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9390937B2 (en) | 2012-09-20 | 2016-07-12 | Applied Materials, Inc. | Silicon-carbon-nitride selective etch |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
TWI480417B (zh) | 2012-11-02 | 2015-04-11 | Ind Tech Res Inst | 具氣幕之氣體噴灑裝置及其薄膜沉積裝置 |
US8765574B2 (en) | 2012-11-09 | 2014-07-01 | Applied Materials, Inc. | Dry etch process |
US8969212B2 (en) | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
US9064816B2 (en) | 2012-11-30 | 2015-06-23 | Applied Materials, Inc. | Dry-etch for selective oxidation removal |
US8980763B2 (en) | 2012-11-30 | 2015-03-17 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
JP6117588B2 (ja) * | 2012-12-12 | 2017-04-19 | 東京エレクトロン株式会社 | Cu配線の形成方法 |
US9111877B2 (en) | 2012-12-18 | 2015-08-18 | Applied Materials, Inc. | Non-local plasma oxide etch |
JP6017396B2 (ja) | 2012-12-18 | 2016-11-02 | 東京エレクトロン株式会社 | 薄膜形成方法および薄膜形成装置 |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
US8735280B1 (en) | 2012-12-21 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of semiconductor integrated circuit fabrication |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US9790596B1 (en) * | 2013-01-30 | 2017-10-17 | Kyocera Corporation | Gas nozzle and plasma device employing same |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US9659814B2 (en) | 2013-02-01 | 2017-05-23 | Applied Materials, Inc. | Doping control of metal nitride films |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US9005704B2 (en) | 2013-03-06 | 2015-04-14 | Applied Materials, Inc. | Methods for depositing films comprising cobalt and cobalt nitrides |
US8801952B1 (en) | 2013-03-07 | 2014-08-12 | Applied Materials, Inc. | Conformal oxide dry etch |
US10170282B2 (en) | 2013-03-08 | 2019-01-01 | Applied Materials, Inc. | Insulated semiconductor faceplate designs |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US8895449B1 (en) | 2013-05-16 | 2014-11-25 | Applied Materials, Inc. | Delicate dry clean |
US9114438B2 (en) | 2013-05-21 | 2015-08-25 | Applied Materials, Inc. | Copper residue chamber clean |
US20150001720A1 (en) * | 2013-06-27 | 2015-01-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect Structure and Method for Forming Interconnect Structure |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US8956980B1 (en) | 2013-09-16 | 2015-02-17 | Applied Materials, Inc. | Selective etch of silicon nitride |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
US8951429B1 (en) | 2013-10-29 | 2015-02-10 | Applied Materials, Inc. | Tungsten oxide processing |
KR20150050638A (ko) * | 2013-10-29 | 2015-05-11 | 에이에스엠 아이피 홀딩 비.브이. | 증착 장치 |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9236265B2 (en) | 2013-11-04 | 2016-01-12 | Applied Materials, Inc. | Silicon germanium processing |
US20150125628A1 (en) * | 2013-11-06 | 2015-05-07 | Asm Ip Holding B.V. | Method of depositing thin film |
US9460932B2 (en) | 2013-11-11 | 2016-10-04 | Applied Materials, Inc. | Surface poisoning using ALD for high selectivity deposition of high aspect ratio features |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9117855B2 (en) | 2013-12-04 | 2015-08-25 | Applied Materials, Inc. | Polarity control for remote plasma |
US9287095B2 (en) | 2013-12-17 | 2016-03-15 | Applied Materials, Inc. | Semiconductor system assemblies and methods of operation |
US9263278B2 (en) | 2013-12-17 | 2016-02-16 | Applied Materials, Inc. | Dopant etch selectivity control |
US9190293B2 (en) | 2013-12-18 | 2015-11-17 | Applied Materials, Inc. | Even tungsten etch for high aspect ratio trenches |
US9287134B2 (en) | 2014-01-17 | 2016-03-15 | Applied Materials, Inc. | Titanium oxide etch |
CN104805418B (zh) * | 2014-01-23 | 2018-05-08 | 北京北方华创微电子装备有限公司 | 常压化学气相淀积中的工艺流程控制方法及系统 |
US9396989B2 (en) | 2014-01-27 | 2016-07-19 | Applied Materials, Inc. | Air gaps between copper lines |
US9293568B2 (en) | 2014-01-27 | 2016-03-22 | Applied Materials, Inc. | Method of fin patterning |
US9385028B2 (en) | 2014-02-03 | 2016-07-05 | Applied Materials, Inc. | Air gap process |
US10683571B2 (en) * | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US9425078B2 (en) * | 2014-02-26 | 2016-08-23 | Lam Research Corporation | Inhibitor plasma mediated atomic layer deposition for seamless feature fill |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9299575B2 (en) | 2014-03-17 | 2016-03-29 | Applied Materials, Inc. | Gas-phase tungsten etch |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9299538B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9136273B1 (en) | 2014-03-21 | 2015-09-15 | Applied Materials, Inc. | Flash gate air gap |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9269590B2 (en) | 2014-04-07 | 2016-02-23 | Applied Materials, Inc. | Spacer formation |
CN104979276B (zh) * | 2014-04-09 | 2018-05-08 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
US9177858B1 (en) | 2014-05-08 | 2015-11-03 | GlobalFoundries, Inc. | Methods for fabricating integrated circuits including barrier layers for interconnect structures |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9847289B2 (en) | 2014-05-30 | 2017-12-19 | Applied Materials, Inc. | Protective via cap for improved interconnect performance |
US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
JP5837962B1 (ja) * | 2014-07-08 | 2015-12-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法およびガス整流部 |
KR102247560B1 (ko) | 2014-07-14 | 2021-05-03 | 삼성전자 주식회사 | Rps에서의 플라즈마 생성방법, 및 그 플라즈마 생성방법을 포함한 반도체 소자 제조방법 |
JP6446881B2 (ja) * | 2014-07-17 | 2019-01-09 | 東京エレクトロン株式会社 | ガス供給装置及びバルブ装置 |
US10384199B2 (en) | 2014-07-17 | 2019-08-20 | Reliance Industries Limited | Modified heterogeneous catalyst |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
JP5792364B1 (ja) * | 2014-07-31 | 2015-10-07 | 株式会社日立国際電気 | 基板処理装置、チャンバリッドアセンブリ、半導体装置の製造方法、プログラム及び記録媒体 |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9378978B2 (en) | 2014-07-31 | 2016-06-28 | Applied Materials, Inc. | Integrated oxide recess and floating gate fin trimming |
US9159606B1 (en) | 2014-07-31 | 2015-10-13 | Applied Materials, Inc. | Metal air gap |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US9165786B1 (en) | 2014-08-05 | 2015-10-20 | Applied Materials, Inc. | Integrated oxide and nitride recess for better channel contact in 3D architectures |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US10465288B2 (en) * | 2014-08-15 | 2019-11-05 | Applied Materials, Inc. | Nozzle for uniform plasma processing |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9355856B2 (en) | 2014-09-12 | 2016-05-31 | Applied Materials, Inc. | V trench dry etch |
US9368364B2 (en) | 2014-09-24 | 2016-06-14 | Applied Materials, Inc. | Silicon etch process with tunable selectivity to SiO2 and other materials |
US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
KR102300403B1 (ko) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US9299583B1 (en) | 2014-12-05 | 2016-03-29 | Applied Materials, Inc. | Aluminum oxide selective etch |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US9343272B1 (en) | 2015-01-08 | 2016-05-17 | Applied Materials, Inc. | Self-aligned process |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9373522B1 (en) | 2015-01-22 | 2016-06-21 | Applied Mateials, Inc. | Titanium nitride removal |
TW201634738A (zh) * | 2015-01-22 | 2016-10-01 | 應用材料股份有限公司 | 用於在空間上分離之原子層沉積腔室的經改良注射器 |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US11384432B2 (en) * | 2015-04-22 | 2022-07-12 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
TWI723024B (zh) | 2015-06-26 | 2021-04-01 | 美商應用材料股份有限公司 | 用於改良的氣體分配的遞迴注入設備 |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
WO2017052905A1 (en) * | 2015-09-22 | 2017-03-30 | Applied Materials, Inc. | Apparatus and method for selective deposition |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10176999B2 (en) * | 2015-12-31 | 2019-01-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device having a multi-layer, metal-containing film |
FR3046878B1 (fr) * | 2016-01-19 | 2018-05-18 | Kobus Sas | Procede de fabrication d'une interconnexion comprenant un via s'etendant au travers d'un substrat |
CN107026113B (zh) * | 2016-02-02 | 2020-03-31 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置的制造方法和系统 |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10662527B2 (en) | 2016-06-01 | 2020-05-26 | Asm Ip Holding B.V. | Manifolds for uniform vapor deposition |
KR102553629B1 (ko) * | 2016-06-17 | 2023-07-11 | 삼성전자주식회사 | 플라즈마 처리 장치 |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
KR102354490B1 (ko) | 2016-07-27 | 2022-01-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
KR20190041030A (ko) * | 2016-09-15 | 2019-04-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 프로세스를 위한 통합 시스템 |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
CN108063117B (zh) * | 2016-11-09 | 2020-12-01 | 中芯国际集成电路制造(上海)有限公司 | 互连结构及其形成方法 |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
TW201823501A (zh) | 2016-11-16 | 2018-07-01 | 美商陶氏全球科技有限責任公司 | 用於製造膜上之薄塗層之方法 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11694911B2 (en) * | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US9972501B1 (en) | 2017-03-14 | 2018-05-15 | Nano-Master, Inc. | Techniques and systems for continuous-flow plasma enhanced atomic layer deposition (PEALD) |
DE102017106410A1 (de) | 2017-03-24 | 2018-09-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD876504S1 (en) | 2017-04-03 | 2020-02-25 | Asm Ip Holding B.V. | Exhaust flow control ring for semiconductor deposition apparatus |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10157785B2 (en) * | 2017-05-01 | 2018-12-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
US11761082B2 (en) * | 2017-05-02 | 2023-09-19 | Picosun Oy | ALD apparatus, method and valve |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11004722B2 (en) | 2017-07-20 | 2021-05-11 | Applied Materials, Inc. | Lift pin assembly |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
JP6964473B2 (ja) * | 2017-09-14 | 2021-11-10 | 東京エレクトロン株式会社 | ガス供給装置及び成膜装置 |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10872803B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
US10872804B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
JP7214724B2 (ja) | 2017-11-27 | 2023-01-30 | エーエスエム アイピー ホールディング ビー.ブイ. | バッチ炉で利用されるウェハカセットを収納するための収納装置 |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TW202325889A (zh) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
CN108415354A (zh) * | 2018-01-31 | 2018-08-17 | 深圳市方瑞科技有限公司 | 一种宽幅等离子处理机及其控制方法 |
CN108415353A (zh) * | 2018-01-31 | 2018-08-17 | 深圳市方瑞科技有限公司 | 一种线型等离子机及其控制方法 |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
CN111699278B (zh) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | 通过循环沉积工艺在衬底上沉积含钌膜的方法 |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
TWI766433B (zh) | 2018-02-28 | 2022-06-01 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
EP3768874A4 (en) | 2018-03-19 | 2022-03-30 | Applied Materials, Inc. | METHODS FOR DEPOSITING COATINGS ON AEROSPACE ELEMENTS |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
WO2019209401A1 (en) | 2018-04-27 | 2019-10-31 | Applied Materials, Inc. | Protection of components from corrosion |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
TW202344708A (zh) | 2018-05-08 | 2023-11-16 | 荷蘭商Asm Ip私人控股有限公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
TW202349473A (zh) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
SG11202011069RA (en) | 2018-06-14 | 2020-12-30 | Mks Instr Inc | Radical output monitor for a remote plasma source and method of use |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
KR20210027265A (ko) | 2018-06-27 | 2021-03-10 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 막 및 구조체 |
CN112292478A (zh) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11009339B2 (en) | 2018-08-23 | 2021-05-18 | Applied Materials, Inc. | Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11124874B2 (en) | 2018-10-25 | 2021-09-21 | Applied Materials, Inc. | Methods for depositing metallic iridium and iridium silicide |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
KR102601581B1 (ko) * | 2018-10-31 | 2023-11-14 | 삼성전자주식회사 | 플라즈마 챔버의 가스 공급 장치 및 이를 적용한 플라즈마 처리 장치 |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
WO2020090890A1 (ja) * | 2018-11-02 | 2020-05-07 | 学校法人日本大学 | 磁化プラズモイド射出装置 |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US10636705B1 (en) | 2018-11-29 | 2020-04-28 | Applied Materials, Inc. | High pressure annealing of metal gate structures |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
KR102610827B1 (ko) * | 2018-12-20 | 2023-12-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 개선된 가스 유동을 처리 챔버의 처리 용적에 공급하기 위한 방법 및 장치 |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
JP2020126881A (ja) * | 2019-02-01 | 2020-08-20 | 東京エレクトロン株式会社 | 基板処理装置およびクリーニング方法 |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
KR102638425B1 (ko) | 2019-02-20 | 2024-02-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치 |
TW202104632A (zh) | 2019-02-20 | 2021-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
TW202100794A (zh) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
US11492701B2 (en) | 2019-03-19 | 2022-11-08 | Asm Ip Holding B.V. | Reactor manifolds |
JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
WO2020219332A1 (en) | 2019-04-26 | 2020-10-29 | Applied Materials, Inc. | Methods of protecting aerospace components against corrosion and oxidation |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
CN111948907B (zh) * | 2019-05-16 | 2022-01-28 | 上海微电子装备(集团)股份有限公司 | 掩模板温度控制装置和掩模曝光装置 |
US11794382B2 (en) | 2019-05-16 | 2023-10-24 | Applied Materials, Inc. | Methods for depositing anti-coking protective coatings on aerospace components |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
CN110112096A (zh) * | 2019-05-17 | 2019-08-09 | 长江存储科技有限责任公司 | 金属互连结构及其形成方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
US11697879B2 (en) | 2019-06-14 | 2023-07-11 | Applied Materials, Inc. | Methods for depositing sacrificial coatings on aerospace components |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP2021015791A (ja) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11466364B2 (en) | 2019-09-06 | 2022-10-11 | Applied Materials, Inc. | Methods for forming protective coatings containing crystallized aluminum oxide |
TW202117068A (zh) * | 2019-09-19 | 2021-05-01 | 美商應用材料股份有限公司 | 用於在ald程序中控制脈衝形狀的方法 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
US11205589B2 (en) * | 2019-10-06 | 2021-12-21 | Applied Materials, Inc. | Methods and apparatuses for forming interconnection structures |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
TW202115273A (zh) | 2019-10-10 | 2021-04-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成光阻底層之方法及包括光阻底層之結構 |
KR20210045930A (ko) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물의 토폴로지-선택적 막의 형성 방법 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210048408A (ko) | 2019-10-22 | 2021-05-03 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 증착 반응기 매니폴드 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN112992667A (zh) | 2019-12-17 | 2021-06-18 | Asm Ip私人控股有限公司 | 形成氮化钒层的方法和包括氮化钒层的结构 |
CN111029299A (zh) * | 2019-12-18 | 2020-04-17 | 华虹半导体(无锡)有限公司 | 金属互连结构的形成方法 |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11087959B2 (en) | 2020-01-09 | 2021-08-10 | Nano-Master, Inc. | Techniques for a hybrid design for efficient and economical plasma enhanced atomic layer deposition (PEALD) and plasma enhanced chemical vapor deposition (PECVD) |
KR20210095050A (ko) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11640900B2 (en) | 2020-02-12 | 2023-05-02 | Nano-Master, Inc. | Electron cyclotron rotation (ECR)-enhanced hollow cathode plasma source (HCPS) |
TW202146715A (zh) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於生長磷摻雜矽層之方法及其系統 |
KR20210116249A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
KR20210132576A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 함유 층을 형성하는 방법 및 이를 포함하는 구조 |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
US11519066B2 (en) | 2020-05-21 | 2022-12-06 | Applied Materials, Inc. | Nitride protective coatings on aerospace components and methods for making the same |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
WO2022005696A1 (en) | 2020-07-03 | 2022-01-06 | Applied Materials, Inc. | Methods for refurbishing aerospace components |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
US20220081759A1 (en) * | 2020-09-17 | 2022-03-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for manufacturing metal gate structures |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
TW202217037A (zh) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積釩金屬的方法、結構、裝置及沉積總成 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235675A (zh) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及基板處理設備 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
CN112956012B (zh) * | 2021-01-27 | 2024-02-23 | 长江存储科技有限责任公司 | 用于在半导体结构中形成阻挡层的方法 |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
TWI806532B (zh) * | 2022-03-31 | 2023-06-21 | 景碩科技股份有限公司 | 電路板結構 |
Family Cites Families (583)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US213987A (en) * | 1879-04-08 | Improvement in bevels | ||
US224578A (en) * | 1880-02-17 | Fence-post driver | ||
US172872A (en) * | 1876-02-01 | Improvement in colters | ||
US76507A (en) * | 1868-04-07 | Egbert o br | ||
US31618A (en) * | 1861-03-05 | Water-elevator | ||
US187256A (en) * | 1877-02-13 | Improvement in windmills | ||
US54769A (en) * | 1866-05-15 | Iiviproveivient in churn-dashers | ||
US28924A (en) * | 1860-06-26 | Vapor-lamp | ||
US31807A (en) * | 1861-03-26 | Improved culinary boiler | ||
US76837A (en) * | 1868-04-14 | John somerville and egbert elsdon | ||
US14320A (en) * | 1856-02-26 | Process of painting or varnishing woven wire | ||
US124262A (en) * | 1872-03-05 | Improvement in oscillating-swings | ||
US86507A (en) * | 1869-02-02 | Improvement in whip-sockets | ||
US41250A (en) * | 1864-01-12 | Improvement in burning, roasting,, and smelting ores | ||
US224600A (en) * | 1880-02-17 | Steam-trap | ||
US622893A (en) * | 1899-04-11 | Electric igniter for gas-engines | ||
US6482262B1 (en) | 1959-10-10 | 2002-11-19 | Asm Microchemistry Oy | Deposition of transition metal carbides |
FI117944B (fi) | 1999-10-15 | 2007-04-30 | Asm Int | Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi |
FI118158B (sv) | 1999-10-15 | 2007-07-31 | Asm Int | Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess |
US3291456A (en) | 1964-07-01 | 1966-12-13 | Combustion Eng | Self-agitating, stabilized flow mixing vessel |
SE393967B (sv) | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
FI57975C (fi) | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
US4389973A (en) | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
US4415275A (en) | 1981-12-21 | 1983-11-15 | Dietrich David E | Swirl mixing device |
FI64878C (fi) | 1982-05-10 | 1984-01-10 | Lohja Ab Oy | Kombinationsfilm foer isynnerhet tunnfilmelektroluminensstrukturer |
US4732110A (en) * | 1983-04-29 | 1988-03-22 | Hughes Aircraft Company | Inverted positive vertical flow chemical vapor deposition reactor chamber |
US5259881A (en) | 1991-05-17 | 1993-11-09 | Materials Research Corporation | Wafer processing cluster tool batch preheating and degassing apparatus |
US5294286A (en) * | 1984-07-26 | 1994-03-15 | Research Development Corporation Of Japan | Process for forming a thin film of silicon |
US5693139A (en) | 1984-07-26 | 1997-12-02 | Research Development Corporation Of Japan | Growth of doped semiconductor monolayers |
GB2162207B (en) | 1984-07-26 | 1989-05-10 | Japan Res Dev Corp | Semiconductor crystal growth apparatus |
JPH0766910B2 (ja) * | 1984-07-26 | 1995-07-19 | 新技術事業団 | 半導体単結晶成長装置 |
US4614639A (en) * | 1985-04-26 | 1986-09-30 | Tegal Corporation | Compound flow plasma reactor |
US5250148A (en) | 1985-05-15 | 1993-10-05 | Research Development Corporation | Process for growing GaAs monocrystal film |
EP0250603B1 (en) | 1985-12-09 | 1994-07-06 | Nippon Telegraph and Telephone Corporation | Process for forming thin film of compound semiconductor |
US4917556A (en) * | 1986-04-28 | 1990-04-17 | Varian Associates, Inc. | Modular wafer transport and processing system |
US4761269A (en) | 1986-06-12 | 1988-08-02 | Crystal Specialties, Inc. | Apparatus for depositing material on a substrate |
US4838983A (en) | 1986-07-03 | 1989-06-13 | Emcore, Inc. | Gas treatment apparatus and method |
US4767494A (en) | 1986-07-04 | 1988-08-30 | Nippon Telegraph & Telephone Corporation | Preparation process of compound semiconductor |
JPH0834180B2 (ja) | 1986-08-26 | 1996-03-29 | セイコー電子工業株式会社 | 化合物半導体薄膜の成長方法 |
US5246536A (en) | 1986-09-08 | 1993-09-21 | Research Development Corporation Of Japan | Method for growing single crystal thin films of element semiconductor |
JPH0639357B2 (ja) | 1986-09-08 | 1994-05-25 | 新技術開発事業団 | 元素半導体単結晶薄膜の成長方法 |
JP2587623B2 (ja) | 1986-11-22 | 1997-03-05 | 新技術事業団 | 化合物半導体のエピタキシヤル結晶成長方法 |
JP2929291B2 (ja) | 1986-12-04 | 1999-08-03 | セイコーインスツルメンツ株式会社 | 絶縁ゲート電界効果トランジスタの製造方法 |
US4951601A (en) | 1986-12-19 | 1990-08-28 | Applied Materials, Inc. | Multi-chamber integrated process system |
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US5882165A (en) * | 1986-12-19 | 1999-03-16 | Applied Materials, Inc. | Multiple chamber integrated process system |
US5923985A (en) | 1987-01-05 | 1999-07-13 | Seiko Instruments Inc. | MOS field effect transistor and its manufacturing method |
DE3704505A1 (de) * | 1987-02-13 | 1988-08-25 | Leybold Ag | Einlegegeraet fuer vakuumanlagen |
JPS63227011A (ja) * | 1987-03-17 | 1988-09-21 | Fujitsu Ltd | 化学気相成長装置 |
JPH0727861B2 (ja) | 1987-03-27 | 1995-03-29 | 富士通株式会社 | ▲iii▼−▲v▼族化合物半導体結晶の成長方法 |
JPH0812844B2 (ja) | 1987-03-27 | 1996-02-07 | 日本電気株式会社 | ▲iii▼−v族化合物半導体およびその形成方法 |
US5348911A (en) | 1987-06-30 | 1994-09-20 | Aixtron Gmbh | Material-saving process for fabricating mixed crystals |
DE3721637A1 (de) | 1987-06-30 | 1989-01-12 | Aixtron Gmbh | Gaseinlass fuer eine mehrzahl verschiedener reaktionsgase in reaktionsgefaesse |
DE3884682T2 (de) | 1987-07-01 | 1994-05-05 | Nec Corp | Verfahren zur Züchtung eines Halbleiterkristalles aus III-V-Gruppen-Verbindung auf einem Si-Substrat. |
JPH0666274B2 (ja) | 1987-07-01 | 1994-08-24 | 日本電気株式会社 | ▲iii▼−v族化合物半導体の形成方法 |
FI81926C (fi) | 1987-09-29 | 1990-12-10 | Nokia Oy Ab | Foerfarande foer uppbyggning av gaas-filmer pao si- och gaas-substrater. |
KR930003136B1 (ko) * | 1987-10-14 | 1993-04-22 | 후루가와덴기 고오교오 가부시기가이샤 | 프라즈마 cvd에 의한 박막 형성장치 |
DE3743938C2 (de) * | 1987-12-23 | 1995-08-31 | Cs Halbleiter Solartech | Verfahren zum Atomschicht-Epitaxie-Aufwachsen einer III/V-Verbindungshalbleiter-Dünnschicht |
FR2626110A1 (fr) | 1988-01-19 | 1989-07-21 | Thomson Csf | Procede de realisation par epitaxie d'une couche d'un materiau supraconducteur |
US5166092A (en) | 1988-01-28 | 1992-11-24 | Fujitsu Limited | Method of growing compound semiconductor epitaxial layer by atomic layer epitaxy |
US5229081A (en) * | 1988-02-12 | 1993-07-20 | Regal Joint Co., Ltd. | Apparatus for semiconductor process including photo-excitation process |
EP0344352B1 (en) | 1988-06-03 | 1994-09-28 | International Business Machines Corporation | Method for making artificial layered high-Tc superconductors |
FR2628985B1 (fr) | 1988-03-22 | 1990-12-28 | Labo Electronique Physique | Reacteur d'epitaxie a paroi protegee contre les depots |
US5130269A (en) * | 1988-04-27 | 1992-07-14 | Fujitsu Limited | Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same |
US5261959A (en) | 1988-05-26 | 1993-11-16 | General Electric Company | Diamond crystal growth apparatus |
US4927670A (en) | 1988-06-22 | 1990-05-22 | Georgia Tech Research Corporation | Chemical vapor deposition of mixed metal oxide coatings |
US5234561A (en) | 1988-08-25 | 1993-08-10 | Hauzer Industries Bv | Physical vapor deposition dual coating process |
US4931132A (en) | 1988-10-07 | 1990-06-05 | Bell Communications Research, Inc. | Optical control of deposition of crystal monolayers |
US4917566A (en) * | 1988-11-17 | 1990-04-17 | Contractors Crane Service, Inc. | Crane attachment for backhoe |
US4907534A (en) * | 1988-12-09 | 1990-03-13 | Siemens Aktiengesellschaft | Gas distributor for OMVPE Growth |
US5013683A (en) | 1989-01-23 | 1991-05-07 | The Regents Of The University Of California | Method for growing tilted superlattices |
JPH0824191B2 (ja) | 1989-03-17 | 1996-03-06 | 富士通株式会社 | 薄膜トランジスタ |
US5186718A (en) * | 1989-05-19 | 1993-02-16 | Applied Materials, Inc. | Staged-vacuum wafer processing system and method |
US4987856A (en) * | 1989-05-22 | 1991-01-29 | Advanced Semiconductor Materials America, Inc. | High throughput multi station processor for multiple single wafers |
US5134965A (en) * | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
AU5977190A (en) | 1989-07-27 | 1991-01-31 | Nishizawa, Junichi | Impurity doping method with adsorbed diffusion source |
JP2506451B2 (ja) | 1989-08-18 | 1996-06-12 | 富士通株式会社 | 化学気相成長装置及び化学気相成長法 |
US5028565A (en) | 1989-08-25 | 1991-07-02 | Applied Materials, Inc. | Process for CVD deposition of tungsten layer on semiconductor wafer |
JP2926798B2 (ja) | 1989-11-20 | 1999-07-28 | 国際電気株式会社 | 連続処理エッチング方法及びその装置 |
CA2031253A1 (en) | 1989-12-01 | 1991-06-02 | Kenji Aoki | Method of producing bipolar transistor |
FI84562C (fi) | 1990-01-16 | 1991-12-27 | Neste Oy | Foerfarande och anordning foer framstaellning av heterogena katalysatorer. |
FI87892C (fi) | 1991-07-16 | 1993-03-10 | Neste Oy | Foerfarande foer framstaellning av heterogena katalysatorer med oenskad metallhalt |
US5290748A (en) * | 1990-01-16 | 1994-03-01 | Neste Oy | Polymerization catalyst for olefines |
US5338389A (en) | 1990-01-19 | 1994-08-16 | Research Development Corporation Of Japan | Method of epitaxially growing compound crystal and doping method therein |
JPH07105497B2 (ja) * | 1990-01-31 | 1995-11-13 | 新技術事業団 | 半導体デバイス及びその製造方法 |
JP2822536B2 (ja) | 1990-02-14 | 1998-11-11 | 住友電気工業株式会社 | 立方晶窒化ホウ素薄膜の形成方法 |
US5316615A (en) | 1990-03-23 | 1994-05-31 | International Business Machines Corporation | Surfactant-enhanced epitaxy |
JPH042699A (ja) * | 1990-04-18 | 1992-01-07 | Mitsubishi Electric Corp | 結晶成長方法 |
US5173474A (en) | 1990-04-18 | 1992-12-22 | Xerox Corporation | Silicon substrate having an epitaxial superconducting layer thereon and method of making same |
US5091320A (en) * | 1990-06-15 | 1992-02-25 | Bell Communications Research, Inc. | Ellipsometric control of material growth |
US5225366A (en) | 1990-06-22 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for and a method of growing thin films of elemental semiconductors |
DE4027628A1 (de) * | 1990-08-31 | 1992-03-05 | Wolters Peter Fa | Vorrichtung zur steuerung oder regelung von laepp-, hon- oder poliermaschinen |
US5483919A (en) * | 1990-08-31 | 1996-01-16 | Nippon Telegraph And Telephone Corporation | Atomic layer epitaxy method and apparatus |
US5085887A (en) * | 1990-09-07 | 1992-02-04 | Applied Materials, Inc. | Wafer reactor vessel window with pressure-thermal compensation |
US5085885A (en) | 1990-09-10 | 1992-02-04 | University Of Delaware | Plasma-induced, in-situ generation, transport and use or collection of reactive precursors |
JPH0819516B2 (ja) * | 1990-10-26 | 1996-02-28 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 薄膜状のアルファTaを形成するための方法および構造 |
US5221449A (en) | 1990-10-26 | 1993-06-22 | International Business Machines Corporation | Method of making Alpha-Ta thin films |
EP0491521B1 (en) * | 1990-12-15 | 1997-03-12 | Fujitsu Limited | Process for producing diamond film |
US5286296A (en) * | 1991-01-10 | 1994-02-15 | Sony Corporation | Multi-chamber wafer process equipment having plural, physically communicating transfer means |
US5178681A (en) | 1991-01-29 | 1993-01-12 | Applied Materials, Inc. | Suspension system for semiconductor reactors |
US5204145A (en) * | 1991-03-04 | 1993-04-20 | General Electric Company | Apparatus for producing diamonds by chemical vapor deposition and articles produced therefrom |
US5705224A (en) * | 1991-03-20 | 1998-01-06 | Kokusai Electric Co., Ltd. | Vapor depositing method |
US5316793A (en) | 1992-07-27 | 1994-05-31 | Texas Instruments Incorporated | Directed effusive beam atomic layer epitaxy system and method |
US5224513A (en) * | 1991-06-04 | 1993-07-06 | Cselt - Centro Studi E Laboratori Telecomunicazioni S.P.A. | Device for introducing reagents into an organometallic vapor phase deposition apparatus |
US5173327A (en) | 1991-06-18 | 1992-12-22 | Micron Technology, Inc. | LPCVD process for depositing titanium films for semiconductor devices |
US5270247A (en) | 1991-07-12 | 1993-12-14 | Fujitsu Limited | Atomic layer epitaxy of compound semiconductor |
US6001669A (en) | 1991-09-09 | 1999-12-14 | Philips Electronics North America Corporation | Method for producing II-VI compound semiconductor epitaxial layers having low defects |
US5311055A (en) | 1991-11-22 | 1994-05-10 | The United States Of America As Represented By The Secretary Of The Navy | Trenched bipolar transistor structures |
JP2987379B2 (ja) | 1991-11-30 | 1999-12-06 | 科学技術振興事業団 | 半導体結晶のエピタキシャル成長方法 |
US5336324A (en) | 1991-12-04 | 1994-08-09 | Emcore Corporation | Apparatus for depositing a coating on a substrate |
JP2763222B2 (ja) * | 1991-12-13 | 1998-06-11 | 三菱電機株式会社 | 化学気相成長方法ならびにそのための化学気相成長処理システムおよび化学気相成長装置 |
US5397428A (en) | 1991-12-20 | 1995-03-14 | The University Of North Carolina At Chapel Hill | Nucleation enhancement for chemical vapor deposition of diamond |
US5480818A (en) * | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
US5256244A (en) | 1992-02-10 | 1993-10-26 | General Electric Company | Production of diffuse reflective coatings by atomic layer epitaxy |
JP2987663B2 (ja) * | 1992-03-10 | 1999-12-06 | 株式会社日立製作所 | 基板処理装置 |
US5458084A (en) | 1992-04-16 | 1995-10-17 | Moxtek, Inc. | X-ray wave diffraction optics constructed by atomic layer epitaxy |
WO1993024979A1 (en) * | 1992-05-22 | 1993-12-09 | Minnesota Mining And Manufacturing Company | Ii-vi laser diodes with quantum wells grown by atomic layer epitaxy and migration enhanced epitaxy |
US5285885A (en) * | 1992-05-29 | 1994-02-15 | Fishburne International, Inc. | Tobacco container sorting conveyor |
US5278435A (en) * | 1992-06-08 | 1994-01-11 | Apa Optics, Inc. | High responsivity ultraviolet gallium nitride detector |
FI91422C (fi) | 1992-06-18 | 1994-06-27 | Mikrokemia Oy | Menetelmä ja laitteisto nestemäisten reagenssien syöttämiseksi kemialliseen reaktoriin |
US5306666A (en) | 1992-07-24 | 1994-04-26 | Nippon Steel Corporation | Process for forming a thin metal film by chemical vapor deposition |
JPH0750690B2 (ja) | 1992-08-21 | 1995-05-31 | 日本電気株式会社 | ハロゲン化物を用いる半導体結晶のエピタキシャル成長方法とその装置 |
US5338362A (en) | 1992-08-29 | 1994-08-16 | Tokyo Electron Limited | Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments |
US5381485A (en) * | 1992-08-29 | 1995-01-10 | Adaptive Control Limited | Active sound control systems and sound reproduction systems |
JP3405466B2 (ja) * | 1992-09-17 | 2003-05-12 | 富士通株式会社 | 流体切替弁および半導体装置の製造装置 |
US5532511A (en) | 1992-10-23 | 1996-07-02 | Research Development Corp. Of Japan | Semiconductor device comprising a highspeed static induction transistor |
US5455072A (en) | 1992-11-18 | 1995-10-03 | Bension; Rouvain M. | Initiation and bonding of diamond and other thin films |
JPH06177349A (ja) * | 1992-12-02 | 1994-06-24 | Matsushita Electric Ind Co Ltd | 高密度dramの製造方法および高密度dram |
US5607009A (en) | 1993-01-28 | 1997-03-04 | Applied Materials, Inc. | Method of heating and cooling large area substrates and apparatus therefor |
JP3265042B2 (ja) | 1993-03-18 | 2002-03-11 | 東京エレクトロン株式会社 | 成膜方法 |
JP3124861B2 (ja) | 1993-03-24 | 2001-01-15 | 富士通株式会社 | 薄膜成長方法および半導体装置の製造方法 |
US5443647A (en) | 1993-04-28 | 1995-08-22 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for depositing a refractory thin film by chemical vapor deposition |
US5526244A (en) * | 1993-05-24 | 1996-06-11 | Bishop; Vernon R. | Overhead luminaire |
US5330610A (en) | 1993-05-28 | 1994-07-19 | Martin Marietta Energy Systems, Inc. | Method of digital epilaxy by externally controlled closed-loop feedback |
JPH0729897A (ja) | 1993-06-25 | 1995-01-31 | Nec Corp | 半導体装置の製造方法 |
US5643366A (en) | 1994-01-31 | 1997-07-01 | Applied Materials, Inc. | Wafer handling within a vacuum chamber using vacuum |
US6130147A (en) | 1994-04-07 | 2000-10-10 | Sdl, Inc. | Methods for forming group III-V arsenide-nitride semiconductor materials |
JP3181171B2 (ja) * | 1994-05-20 | 2001-07-03 | シャープ株式会社 | 気相成長装置および気相成長方法 |
US5665640A (en) * | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
US5580421A (en) * | 1994-06-14 | 1996-12-03 | Fsi International | Apparatus for surface conditioning |
US5916395A (en) * | 1994-07-05 | 1999-06-29 | Murata Manufacturing Co., Ltd. | Method for fabricating ceramic electronic parts |
JP3008782B2 (ja) | 1994-07-15 | 2000-02-14 | 信越半導体株式会社 | 気相成長方法およびその装置 |
US5796116A (en) | 1994-07-27 | 1998-08-18 | Sharp Kabushiki Kaisha | Thin-film semiconductor device including a semiconductor film with high field-effect mobility |
US5641984A (en) | 1994-08-19 | 1997-06-24 | General Electric Company | Hermetically sealed radiation imager |
TW295677B (zh) | 1994-08-19 | 1997-01-11 | Tokyo Electron Co Ltd | |
US5730801A (en) * | 1994-08-23 | 1998-03-24 | Applied Materials, Inc. | Compartnetalized substrate processing chamber |
US5644128A (en) | 1994-08-25 | 1997-07-01 | Ionwerks | Fast timing position sensitive detector |
US6158446A (en) | 1994-11-14 | 2000-12-12 | Fsi International | Ultra-low particle semiconductor cleaner |
JPH08148431A (ja) | 1994-11-24 | 1996-06-07 | Mitsubishi Electric Corp | Mbe装置、及びガス分岐配管装置 |
FI97730C (fi) * | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Laitteisto ohutkalvojen valmistamiseksi |
FI100409B (fi) * | 1994-11-28 | 1997-11-28 | Asm Int | Menetelmä ja laitteisto ohutkalvojen valmistamiseksi |
FI97731C (fi) * | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Menetelmä ja laite ohutkalvojen valmistamiseksi |
US5558717A (en) | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
WO1996018756A1 (en) | 1994-12-16 | 1996-06-20 | Nkt Research Center A/S | A PA-CVD PROCESS FOR DEPOSITION OF A SOLID METAL-CONTAINING FILM ONTO A SUBSTRATE CONTAINING AT LEAST 50 % of Fe or WC |
US5542452A (en) * | 1995-02-07 | 1996-08-06 | Cdc Technologies, Inc. | Valve assembly |
KR100425655B1 (ko) * | 1995-03-28 | 2004-06-26 | 텍사스 인스트루먼츠 인코포레이티드 | 집적회로의금속화층사이의반응을최소화하기위한확산방지삼중층및제조방법 |
JPH08288965A (ja) | 1995-04-18 | 1996-11-01 | Hitachi Ltd | スイッチングシステム |
US5573566A (en) * | 1995-05-26 | 1996-11-12 | Advanced Semiconductor Materials America, Inc. | Method of making a quartz dome reactor chamber |
TW323387B (zh) * | 1995-06-07 | 1997-12-21 | Tokyo Electron Co Ltd | |
JP3288200B2 (ja) * | 1995-06-09 | 2002-06-04 | 東京エレクトロン株式会社 | 真空処理装置 |
JPH0922896A (ja) | 1995-07-07 | 1997-01-21 | Toshiba Corp | 金属膜の選択的形成方法 |
TW294820B (en) * | 1995-07-10 | 1997-01-01 | Watkins Johnson Co | Gas distribution apparatus |
TW283250B (en) * | 1995-07-10 | 1996-08-11 | Watkins Johnson Co | Plasma enhanced chemical processing reactor and method |
KR0167248B1 (ko) | 1995-07-24 | 1999-02-01 | 문정환 | 반도체 기판의 전처리방법 |
KR100310249B1 (ko) | 1995-08-05 | 2001-12-17 | 엔도 마코토 | 기판처리장치 |
US5804488A (en) | 1995-08-24 | 1998-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a tungsten silicide capacitor having a high breakdown voltage |
US6066358A (en) * | 1995-11-21 | 2000-05-23 | Applied Materials, Inc. | Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer |
US5672054A (en) | 1995-12-07 | 1997-09-30 | Carrier Corporation | Rotary compressor with reduced lubrication sensitivity |
US6084302A (en) * | 1995-12-26 | 2000-07-04 | Micron Technologies, Inc. | Barrier layer cladding around copper interconnect lines |
FI107533B (fi) | 1996-04-03 | 2001-08-31 | Fortum Oil & Gas Oy | Kemiallisten reaktioiden suorittamiseen tarkoitetut funktionaaliset pinnat ja menetelmä niiden valmistamiseksi |
US5667592A (en) | 1996-04-16 | 1997-09-16 | Gasonics International | Process chamber sleeve with ring seals for isolating individual process modules in a common cluster |
US5906683A (en) | 1996-04-16 | 1999-05-25 | Applied Materials, Inc. | Lid assembly for semiconductor processing chamber |
US6313035B1 (en) | 1996-05-31 | 2001-11-06 | Micron Technology, Inc. | Chemical vapor deposition using organometallic precursors |
US5788799A (en) | 1996-06-11 | 1998-08-04 | Applied Materials, Inc. | Apparatus and method for cleaning of semiconductor process chamber surfaces |
US6062798A (en) | 1996-06-13 | 2000-05-16 | Brooks Automation, Inc. | Multi-level substrate processing apparatus |
US6534133B1 (en) * | 1996-06-14 | 2003-03-18 | Research Foundation Of State University Of New York | Methodology for in-situ doping of aluminum coatings |
US6342277B1 (en) * | 1996-08-16 | 2002-01-29 | Licensee For Microelectronics: Asm America, Inc. | Sequential chemical vapor deposition |
US5996528A (en) * | 1996-07-02 | 1999-12-07 | Novellus Systems, Inc. | Method and apparatus for flowing gases into a manifold at high potential |
US5846332A (en) | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
AUPO129096A0 (en) * | 1996-07-26 | 1996-08-22 | Boc Gases Australia Limited | Oxygen dissolver for pipelines or pipe outlets |
US5747113A (en) | 1996-07-29 | 1998-05-05 | Tsai; Charles Su-Chang | Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation |
US5830270A (en) | 1996-08-05 | 1998-11-03 | Lockheed Martin Energy Systems, Inc. | CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class |
JP3901252B2 (ja) * | 1996-08-13 | 2007-04-04 | キヤノンアネルバ株式会社 | 化学蒸着装置 |
US5916365A (en) * | 1996-08-16 | 1999-06-29 | Sherman; Arthur | Sequential chemical vapor deposition |
JP2923753B2 (ja) * | 1996-08-21 | 1999-07-26 | 工業技術院長 | Iii族原子層の形成方法 |
KR100216542B1 (ko) | 1996-08-27 | 1999-08-16 | 정선종 | 펄스 레이저 증착장치용 멀티 타겟 구동장치 |
FI100758B (fi) | 1996-09-11 | 1998-02-13 | Planar Internat Oy Ltd | Menetelmä ZnS:Mn-loisteainekerroksen kasvattamiseksi ohutkalvoelektrol uminenssikomponentteja varten |
US5951771A (en) | 1996-09-30 | 1999-09-14 | Celestech, Inc. | Plasma jet system |
US5835677A (en) | 1996-10-03 | 1998-11-10 | Emcore Corporation | Liquid vaporizer system and method |
US5923056A (en) * | 1996-10-10 | 1999-07-13 | Lucent Technologies Inc. | Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials |
US6071572A (en) | 1996-10-15 | 2000-06-06 | Applied Materials, Inc. | Forming tin thin films using remote activated specie generation |
US5882411A (en) | 1996-10-21 | 1999-03-16 | Applied Materials, Inc. | Faceplate thermal choke in a CVD plasma reactor |
US5928389A (en) | 1996-10-21 | 1999-07-27 | Applied Materials, Inc. | Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool |
US5807792A (en) | 1996-12-18 | 1998-09-15 | Siemens Aktiengesellschaft | Uniform distribution of reactants in a device layer |
US6335280B1 (en) * | 1997-01-13 | 2002-01-01 | Asm America, Inc. | Tungsten silicide deposition process |
US6043177A (en) * | 1997-01-21 | 2000-03-28 | University Technology Corporation | Modification of zeolite or molecular sieve membranes using atomic layer controlled chemical vapor deposition |
US5913147A (en) * | 1997-01-21 | 1999-06-15 | Advanced Micro Devices, Inc. | Method for fabricating copper-aluminum metallization |
US6051286A (en) | 1997-02-12 | 2000-04-18 | Applied Materials, Inc. | High temperature, high deposition rate process and apparatus for depositing titanium layers |
US6174509B1 (en) * | 1997-02-11 | 2001-01-16 | Corning Incorporated | Pure fused silica, furnace and method |
DE19706789C2 (de) * | 1997-02-20 | 1999-10-21 | Siemens Ag | CMOS-Schaltung mit teilweise dielektrisch isolierten Source-Drain-Bereichen und Verfahren zu ihrer Herstellung |
DE19707929C1 (de) * | 1997-02-27 | 1998-09-03 | Schroff Gmbh | Schrank zur Aufnahme von elektrischen und elektronischen Komponenten |
US5855675A (en) * | 1997-03-03 | 1999-01-05 | Genus, Inc. | Multipurpose processing chamber for chemical vapor deposition processes |
US6174377B1 (en) | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
JPH10308283A (ja) * | 1997-03-04 | 1998-11-17 | Denso Corp | El素子およびその製造方法 |
US5866795A (en) * | 1997-03-17 | 1999-02-02 | Applied Materials, Inc. | Liquid flow rate estimation and verification by direct liquid measurement |
US6153519A (en) | 1997-03-31 | 2000-11-28 | Motorola, Inc. | Method of forming a barrier layer |
US5888303A (en) * | 1997-04-07 | 1999-03-30 | R.E. Dixon Inc. | Gas inlet apparatus and method for chemical vapor deposition reactors |
KR100469047B1 (ko) * | 1997-04-11 | 2005-01-31 | 동경 엘렉트론 주식회사 | 처리장치, 상부전극유니트와 그 사용방법 및 전극유니트와 그 제조방법 |
US6026762A (en) | 1997-04-23 | 2000-02-22 | Applied Materials, Inc. | Apparatus for improved remote microwave plasma source for use with substrate processing systems |
TW417249B (en) | 1997-05-14 | 2001-01-01 | Applied Materials Inc | Reliability barrier integration for cu application |
US6156382A (en) | 1997-05-16 | 2000-12-05 | Applied Materials, Inc. | Chemical vapor deposition process for depositing tungsten |
US5851849A (en) | 1997-05-22 | 1998-12-22 | Lucent Technologies Inc. | Process for passivating semiconductor laser structures with severe steps in surface topography |
US6140237A (en) | 1997-06-16 | 2000-10-31 | Chartered Semiconductor Manufacturing Ltd. | Damascene process for forming coplanar top surface of copper connector isolated by barrier layers in an insulating layer |
US5846330A (en) * | 1997-06-26 | 1998-12-08 | Celestech, Inc. | Gas injection disc assembly for CVD applications |
US6309713B1 (en) | 1997-06-30 | 2001-10-30 | Applied Materials, Inc. | Deposition of tungsten nitride by plasma enhanced chemical vapor deposition |
US6162715A (en) | 1997-06-30 | 2000-12-19 | Applied Materials, Inc. | Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride |
FI972874A0 (fi) | 1997-07-04 | 1997-07-04 | Mikrokemia Oy | Foerfarande och anordning foer framstaellning av tunnfilmer |
US6073366A (en) | 1997-07-11 | 2000-06-13 | Asm America, Inc. | Substrate cooling system and method |
US5882413A (en) * | 1997-07-11 | 1999-03-16 | Brooks Automation, Inc. | Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer |
US5904565A (en) | 1997-07-17 | 1999-05-18 | Sharp Microelectronics Technology, Inc. | Low resistance contact between integrated circuit metal levels and method for same |
US6287965B1 (en) | 1997-07-28 | 2001-09-11 | Samsung Electronics Co, Ltd. | Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor |
KR100385946B1 (ko) * | 1999-12-08 | 2003-06-02 | 삼성전자주식회사 | 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자 |
KR100269306B1 (ko) | 1997-07-31 | 2000-10-16 | 윤종용 | 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법 |
US7393561B2 (en) * | 1997-08-11 | 2008-07-01 | Applied Materials, Inc. | Method and apparatus for layer by layer deposition of thin films |
KR100261017B1 (ko) | 1997-08-19 | 2000-08-01 | 윤종용 | 반도체 장치의 금속 배선층을 형성하는 방법 |
US5904569A (en) | 1997-09-03 | 1999-05-18 | National Semiconductor Corporation | Method for forming self-aligned vias in multi-metal integrated circuits |
US5801634A (en) | 1997-09-08 | 1998-09-01 | Sony Corporation | Signal tower controller |
US6348376B2 (en) * | 1997-09-29 | 2002-02-19 | Samsung Electronics Co., Ltd. | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same |
US6197683B1 (en) * | 1997-09-29 | 2001-03-06 | Samsung Electronics Co., Ltd. | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same |
KR100274603B1 (ko) | 1997-10-01 | 2001-01-15 | 윤종용 | 반도체장치의제조방법및그의제조장치 |
JPH11117071A (ja) * | 1997-10-09 | 1999-04-27 | Anelva Corp | Cvd装置 |
US6110556A (en) | 1997-10-17 | 2000-08-29 | Applied Materials, Inc. | Lid assembly for a process chamber employing asymmetric flow geometries |
KR100252049B1 (ko) | 1997-11-18 | 2000-04-15 | 윤종용 | 원자층 증착법에 의한 알루미늄층의 제조방법 |
US5972430A (en) | 1997-11-26 | 1999-10-26 | Advanced Technology Materials, Inc. | Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer |
US6079356A (en) | 1997-12-02 | 2000-06-27 | Applied Materials, Inc. | Reactor optimized for chemical vapor deposition of titanium |
US6099904A (en) * | 1997-12-02 | 2000-08-08 | Applied Materials, Inc. | Low resistivity W using B2 H6 nucleation step |
JP3550985B2 (ja) * | 1997-12-02 | 2004-08-04 | 株式会社デンソー | 神経回路網の検証方法,検証装置及び記録媒体 |
FI104383B (fi) | 1997-12-09 | 2000-01-14 | Fortum Oil & Gas Oy | Menetelmä laitteistojen sisäpintojen päällystämiseksi |
US6107192A (en) * | 1997-12-30 | 2000-08-22 | Applied Materials, Inc. | Reactive preclean prior to metallization for sub-quarter micron application |
KR100269328B1 (ko) * | 1997-12-31 | 2000-10-16 | 윤종용 | 원자층 증착 공정을 이용하는 도전층 형성방법 |
TW439151B (en) | 1997-12-31 | 2001-06-07 | Samsung Electronics Co Ltd | Method for forming conductive layer using atomic layer deposition process |
KR100275727B1 (ko) * | 1998-01-06 | 2001-01-15 | 윤종용 | 반도체 장치의 커패시터 형성방법 |
US6140234A (en) * | 1998-01-20 | 2000-10-31 | International Business Machines Corporation | Method to selectively fill recesses with conductive metal |
US6015917A (en) * | 1998-01-23 | 2000-01-18 | Advanced Technology Materials, Inc. | Tantalum amide precursors for deposition of tantalum nitride on a substrate |
US6303523B2 (en) | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
US6117244A (en) | 1998-03-24 | 2000-09-12 | Applied Materials, Inc. | Deposition resistant lining for CVD chamber |
US6316098B1 (en) | 1998-03-27 | 2001-11-13 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Molecular layer epitaxy method and compositions |
NZ506985A (en) | 1998-03-31 | 2003-10-31 | Warner Lambert Co | Benzoxazinones/benzothiazinones as serine protease inhibitors |
JPH11297681A (ja) * | 1998-04-07 | 1999-10-29 | Mitsubishi Electric Corp | 高誘電率薄膜形成用cvd装置および高誘電率薄膜の形成方法 |
US6433314B1 (en) | 1998-04-08 | 2002-08-13 | Applied Materials, Inc. | Direct temperature control for a component of a substrate processing chamber |
JP3955386B2 (ja) * | 1998-04-09 | 2007-08-08 | 富士通株式会社 | 半導体装置及びその製造方法 |
US6181012B1 (en) * | 1998-04-27 | 2001-01-30 | International Business Machines Corporation | Copper interconnection structure incorporating a metal seed layer |
KR100267885B1 (ko) * | 1998-05-18 | 2000-11-01 | 서성기 | 반도체 박막증착장치 |
KR100282853B1 (ko) | 1998-05-18 | 2001-04-02 | 서성기 | 연속기체분사에의한반도체박막증착장치 |
US6025627A (en) * | 1998-05-29 | 2000-02-15 | Micron Technology, Inc. | Alternate method and structure for improved floating gate tunneling devices |
FI105313B (fi) | 1998-06-03 | 2000-07-14 | Planar Systems Oy | Menetelmä ohutkalvo-elektroluminesenssirakenteiden kasvattamiseksi |
NL1009327C2 (nl) | 1998-06-05 | 1999-12-10 | Asm Int | Werkwijze en inrichting voor het overbrengen van wafers. |
KR100319888B1 (ko) * | 1998-06-16 | 2002-01-10 | 윤종용 | 선택적 금속층 형성방법, 이를 이용한 커패시터 형성 및 콘택홀 매립방법 |
US6086677A (en) | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
KR100278657B1 (ko) | 1998-06-24 | 2001-02-01 | 윤종용 | 반도체장치의금속배선구조및그제조방법 |
JP2000031387A (ja) | 1998-07-14 | 2000-01-28 | Fuji Electric Co Ltd | 誘電体薄膜コンデンサの製造方法 |
US6218302B1 (en) * | 1998-07-21 | 2001-04-17 | Motorola Inc. | Method for forming a semiconductor device |
US6358323B1 (en) * | 1998-07-21 | 2002-03-19 | Applied Materials, Inc. | Method and apparatus for improved control of process and purge material in a substrate processing system |
KR100275738B1 (ko) | 1998-08-07 | 2000-12-15 | 윤종용 | 원자층 증착법을 이용한 박막 제조방법 |
KR20000013654A (ko) | 1998-08-12 | 2000-03-06 | 윤종용 | 원자층 증착 방법으로 형성한 알루미나/알루미늄나이트라이드복합 유전체막을 갖는 캐패시터와 그제조 방법 |
KR100327105B1 (ko) | 1998-08-14 | 2002-03-09 | 오길록 | 고휘도 형광체 및 그 제조방법 |
US6291876B1 (en) | 1998-08-20 | 2001-09-18 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with composite atomic barrier film and process for making same |
FI105643B (fi) | 1998-08-21 | 2000-09-15 | Planar Systems Oy | Ohutkalvo-elektroluminesenssilaite ja menetelmä sen valmistamiseksi |
US6520218B1 (en) | 1998-09-03 | 2003-02-18 | Advanced Technology Materials, Inc. | Container chemical guard |
KR20000022003A (ko) | 1998-09-10 | 2000-04-25 | 이경수 | 금속과규소를포함한3성분질화물막의형성방법 |
FI108375B (fi) | 1998-09-11 | 2002-01-15 | Asm Microchemistry Oy | Menetelmõ eristõvien oksidiohutkalvojen valmistamiseksi |
KR100273474B1 (ko) | 1998-09-14 | 2000-12-15 | 이경수 | 화학기상 증착장치의 가스 공급장치와 그 제어방법 |
KR100287180B1 (ko) * | 1998-09-17 | 2001-04-16 | 윤종용 | 계면 조절층을 이용하여 금속 배선층을 형성하는 반도체 소자의 제조 방법 |
US6251759B1 (en) * | 1998-10-03 | 2001-06-26 | Applied Materials, Inc. | Method and apparatus for depositing material upon a semiconductor wafer using a transition chamber of a multiple chamber semiconductor wafer processing system |
US6143082A (en) | 1998-10-08 | 2000-11-07 | Novellus Systems, Inc. | Isolation of incompatible processes in a multi-station processing chamber |
US6445701B1 (en) * | 1998-10-09 | 2002-09-03 | Microsoft Corporation | Channel access scheme for use in network communications |
KR100327328B1 (ko) * | 1998-10-13 | 2002-05-09 | 윤종용 | 부분적으로다른두께를갖는커패시터의유전막형성방버뵤 |
KR100297719B1 (ko) * | 1998-10-16 | 2001-08-07 | 윤종용 | 박막제조방법 |
US6454860B2 (en) | 1998-10-27 | 2002-09-24 | Applied Materials, Inc. | Deposition reactor having vaporizing, mixing and cleaning capabilities |
US20030101938A1 (en) | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
US6409904B1 (en) * | 1998-12-01 | 2002-06-25 | Nutool, Inc. | Method and apparatus for depositing and controlling the texture of a thin film |
KR100331544B1 (ko) | 1999-01-18 | 2002-04-06 | 윤종용 | 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드 |
JP2995300B1 (ja) | 1999-02-03 | 1999-12-27 | 工業技術院長 | 機械要素部品の表面改善方法 |
US6087726A (en) * | 1999-03-01 | 2000-07-11 | Lsi Logic Corporation | Metal interconnect stack for integrated circuit structure |
US6305314B1 (en) | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
US6200893B1 (en) | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
US6540838B2 (en) | 2000-11-29 | 2003-04-01 | Genus, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
US20020000665A1 (en) * | 1999-04-05 | 2002-01-03 | Alexander L. Barr | Semiconductor device conductive bump and interconnect barrier |
KR100273473B1 (ko) | 1999-04-06 | 2000-11-15 | 이경수 | 박막 형성 방법 |
JP2000290777A (ja) * | 1999-04-07 | 2000-10-17 | Tokyo Electron Ltd | ガス処理装置、バッフル部材、及びガス処理方法 |
JP2000319773A (ja) | 1999-04-30 | 2000-11-21 | Shindengen Electric Mfg Co Ltd | X線検出器におけるセレン層の製造方法 |
KR100347379B1 (ko) | 1999-05-01 | 2002-08-07 | 주식회사 피케이엘 | 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치 |
FI118342B (fi) | 1999-05-10 | 2007-10-15 | Asm Int | Laite ohutkalvojen valmistamiseksi |
TW512448B (en) * | 1999-05-11 | 2002-12-01 | Applied Materials Inc | Sequential sputter and reactive precleans of vias and contacts |
US6218298B1 (en) | 1999-05-19 | 2001-04-17 | Infineon Technologies North America Corp. | Tungsten-filled deep trenches |
JP2000340883A (ja) | 1999-05-27 | 2000-12-08 | Fujitsu Ltd | 多波長発振光半導体装置 |
US6254602B1 (en) | 1999-05-28 | 2001-07-03 | Sdgi Holdings, Inc. | Advanced coupling device using shape-memory technology |
US6124158A (en) | 1999-06-08 | 2000-09-26 | Lucent Technologies Inc. | Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants |
JP2000353666A (ja) | 1999-06-11 | 2000-12-19 | Matsushita Electric Ind Co Ltd | 半導体薄膜およびその製造方法 |
US6539891B1 (en) | 1999-06-19 | 2003-04-01 | Genitech, Inc. | Chemical deposition reactor and method of forming a thin film using the same |
US6071808A (en) | 1999-06-23 | 2000-06-06 | Lucent Technologies Inc. | Method of passivating copper interconnects in a semiconductor |
EP1226286A4 (en) | 1999-06-24 | 2007-08-15 | Prasad Narhar Gadgil | CHEMICAL DEPOSITION DEVICE IN VAPOR PHASE ATOMIC LAYERS |
US6524952B1 (en) | 1999-06-25 | 2003-02-25 | Applied Materials, Inc. | Method of forming a titanium silicide layer on a substrate |
US6309964B1 (en) * | 1999-07-08 | 2001-10-30 | Taiwan Semiconductor Manufacturing Company | Method for forming a copper damascene structure over tungsten plugs with improved adhesion, oxidation resistance, and diffusion barrier properties using nitridation of the tungsten plug |
KR100319494B1 (ko) | 1999-07-15 | 2002-01-09 | 김용일 | 원자층 에피택시 공정을 위한 반도체 박막 증착장치 |
FI110311B (fi) | 1999-07-20 | 2002-12-31 | Asm Microchemistry Oy | Menetelmä ja laitteisto aineiden poistamiseksi kaasuista |
KR20010017820A (ko) | 1999-08-14 | 2001-03-05 | 윤종용 | 반도체 소자 및 그 제조방법 |
US6328871B1 (en) | 1999-08-16 | 2001-12-11 | Applied Materials, Inc. | Barrier layer for electroplating processes |
KR200167993Y1 (ko) | 1999-08-17 | 2000-02-15 | 박함규 | 자수기의 윗실 공급장치 |
US6984415B2 (en) | 1999-08-20 | 2006-01-10 | International Business Machines Corporation | Delivery systems for gases for gases via the sublimation of solid precursors |
US6391785B1 (en) | 1999-08-24 | 2002-05-21 | Interuniversitair Microelektronica Centrum (Imec) | Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
SG90747A1 (en) * | 1999-09-02 | 2002-08-20 | Applied Materials Inc | Method of pre-cleaning dielectric layers of substrates |
WO2001017691A1 (de) | 1999-09-03 | 2001-03-15 | ABB Fläkt Aktiebolag | Verfahren zum ein- und ausbringen von werkstücken in bzw. aus einem oberflächenbehandlungsbereich, oberflächenbehandlungsvorrichtung und anlage zur oberflächenbehandlung |
US6184138B1 (en) * | 1999-09-07 | 2001-02-06 | Chartered Semiconductor Manufacturing Ltd. | Method to create a controllable and reproducible dual copper damascene structure |
US6511539B1 (en) * | 1999-09-08 | 2003-01-28 | Asm America, Inc. | Apparatus and method for growth of a thin film |
US6383330B1 (en) * | 1999-09-10 | 2002-05-07 | Asm America, Inc. | Quartz wafer processing chamber |
US6610151B1 (en) | 1999-10-02 | 2003-08-26 | Uri Cohen | Seed layers for interconnects and methods and apparatus for their fabrication |
TW515032B (en) | 1999-10-06 | 2002-12-21 | Samsung Electronics Co Ltd | Method of forming thin film using atomic layer deposition method |
FI117942B (fi) | 1999-10-14 | 2007-04-30 | Asm Int | Menetelmä oksidiohutkalvojen kasvattamiseksi |
WO2001029280A1 (en) | 1999-10-15 | 2001-04-26 | Asm America, Inc. | Deposition of transition metal carbides |
JP5173098B2 (ja) | 1999-10-15 | 2013-03-27 | エーエスエム インターナショナル エヌ.ヴェー. | ダマシン・メタライゼーションのためのコンフォーマルライニング層 |
WO2001029893A1 (en) | 1999-10-15 | 2001-04-26 | Asm America, Inc. | Method for depositing nanolaminate thin films on sensitive surfaces |
ATE247632T1 (de) | 1999-10-15 | 2003-09-15 | Lonza Ag | Verfahren zur herstellung von cyanessigsäureestern |
US6203613B1 (en) * | 1999-10-19 | 2001-03-20 | International Business Machines Corporation | Atomic layer deposition with nitrate containing precursors |
KR100304714B1 (ko) | 1999-10-20 | 2001-11-02 | 윤종용 | 금속 할로겐 가스를 사용한 반도체 소자의 금속 박막 형성방법 |
SG99871A1 (en) | 1999-10-25 | 2003-11-27 | Motorola Inc | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6548112B1 (en) | 1999-11-18 | 2003-04-15 | Tokyo Electron Limited | Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamber |
KR20010047128A (ko) | 1999-11-18 | 2001-06-15 | 이경수 | 액체원료 기화방법 및 그에 사용되는 장치 |
US6558509B2 (en) | 1999-11-30 | 2003-05-06 | Applied Materials, Inc. | Dual wafer load lock |
US6780704B1 (en) | 1999-12-03 | 2004-08-24 | Asm International Nv | Conformal thin films over textured capacitor electrodes |
FI118804B (fi) | 1999-12-03 | 2008-03-31 | Asm Int | Menetelmä oksidikalvojen kasvattamiseksi |
KR100364257B1 (ko) * | 1999-12-06 | 2002-12-11 | 삼성전자 주식회사 | 텅스텐 화학 기상 퇴적방법 및 텅스텐 플러그 형성방법 |
KR100330749B1 (ko) | 1999-12-17 | 2002-04-03 | 서성기 | 반도체 박막증착장치 |
KR100705926B1 (ko) * | 1999-12-22 | 2007-04-11 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조방법 |
KR100624903B1 (ko) | 1999-12-22 | 2006-09-19 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조방법 |
FI118343B (fi) | 1999-12-28 | 2007-10-15 | Asm Int | Laite ohutkalvojen valmistamiseksi |
FI118474B (fi) | 1999-12-28 | 2007-11-30 | Asm Int | Laite ohutkalvojen valmistamiseksi |
KR100390951B1 (ko) | 1999-12-29 | 2003-07-10 | 주식회사 하이닉스반도체 | 반도체 소자의 구리 배선 형성 방법 |
JP4817210B2 (ja) | 2000-01-06 | 2011-11-16 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
FI20000099A0 (fi) | 2000-01-18 | 2000-01-18 | Asm Microchemistry Ltd | Menetelmä metalliohutkalvojen kasvattamiseksi |
US6277249B1 (en) * | 2000-01-21 | 2001-08-21 | Applied Materials Inc. | Integrated process for copper via filling using a magnetron and target producing highly energetic ions |
JP4776054B2 (ja) | 2000-02-04 | 2011-09-21 | 株式会社デンソー | 原子層成長による薄膜形成方法 |
JP4362919B2 (ja) | 2000-02-04 | 2009-11-11 | 株式会社デンソー | 原子層エピタキシャル成長法による成膜方法 |
KR100378871B1 (ko) | 2000-02-16 | 2003-04-07 | 주식회사 아펙스 | 라디칼 증착을 위한 샤워헤드장치 |
US6492283B2 (en) | 2000-02-22 | 2002-12-10 | Asm Microchemistry Oy | Method of forming ultrathin oxide layer |
JP4211185B2 (ja) | 2000-02-29 | 2009-01-21 | 株式会社デンソー | Cvd,ale装置用ガラス基板収納治具 |
WO2001066832A2 (en) | 2000-03-07 | 2001-09-13 | Asm America, Inc. | Graded thin films |
JP3423665B2 (ja) * | 2000-03-31 | 2003-07-07 | 理想科学工業株式会社 | 領域判別方法および装置 |
JP4556282B2 (ja) | 2000-03-31 | 2010-10-06 | 株式会社デンソー | 有機el素子およびその製造方法 |
US7060132B2 (en) | 2000-04-14 | 2006-06-13 | Asm International N.V. | Method and apparatus of growing a thin film |
TW496907B (en) | 2000-04-14 | 2002-08-01 | Asm Microchemistry Oy | Method and apparatus of growing a thin film onto a substrate |
FI117979B (fi) * | 2000-04-14 | 2007-05-15 | Asm Int | Menetelmä oksidiohutkalvojen valmistamiseksi |
TW576873B (en) | 2000-04-14 | 2004-02-21 | Asm Int | Method of growing a thin film onto a substrate |
KR100363088B1 (ko) | 2000-04-20 | 2002-12-02 | 삼성전자 주식회사 | 원자층 증착방법을 이용한 장벽 금속막의 제조방법 |
US6759325B2 (en) | 2000-05-15 | 2004-07-06 | Asm Microchemistry Oy | Sealing porous structures |
JP5173101B2 (ja) * | 2000-05-15 | 2013-03-27 | エイエスエム インターナショナル エヌ.ヴェー. | 集積回路の製造方法 |
FI118805B (fi) | 2000-05-15 | 2008-03-31 | Asm Int | Menetelmä ja kokoonpano kaasufaasireaktantin syöttämiseksi reaktiokammioon |
JP2001328900A (ja) | 2000-05-15 | 2001-11-27 | Denso Corp | 薄膜の形成方法 |
US6482733B2 (en) * | 2000-05-15 | 2002-11-19 | Asm Microchemistry Oy | Protective layers prior to alternating layer deposition |
KR100427423B1 (ko) | 2000-05-25 | 2004-04-13 | 가부시키가이샤 고베 세이코쇼 | Cvd용 인너튜브 |
KR100647442B1 (ko) | 2000-06-07 | 2006-11-17 | 주성엔지니어링(주) | 원자층 증착법을 이용한 박막 형성방법 |
KR100403611B1 (ko) * | 2000-06-07 | 2003-11-01 | 삼성전자주식회사 | 금속-절연체-금속 구조의 커패시터 및 그 제조방법 |
US7141278B2 (en) * | 2000-06-08 | 2006-11-28 | Asm Genitech Korea Ltd. | Thin film forming method |
US7253076B1 (en) | 2000-06-08 | 2007-08-07 | Micron Technologies, Inc. | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers |
KR100387255B1 (ko) * | 2000-06-20 | 2003-06-11 | 주식회사 하이닉스반도체 | 반도체 소자의 금속 배선 형성 방법 |
KR100332313B1 (ko) | 2000-06-24 | 2002-04-12 | 서성기 | Ald 박막증착장치 및 증착방법 |
KR100332314B1 (ko) * | 2000-06-24 | 2002-04-12 | 서성기 | 박막증착용 반응용기 |
US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US6551929B1 (en) * | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
US6936538B2 (en) * | 2001-07-16 | 2005-08-30 | Applied Materials, Inc. | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics |
US6818250B2 (en) | 2000-06-29 | 2004-11-16 | The Regents Of The University Of Colorado | Method for forming SIO2 by chemical vapor deposition at room temperature |
US6585823B1 (en) | 2000-07-07 | 2003-07-01 | Asm International, N.V. | Atomic layer deposition |
US6592942B1 (en) | 2000-07-07 | 2003-07-15 | Asm International N.V. | Method for vapour deposition of a film onto a substrate |
FI20001694A0 (fi) | 2000-07-20 | 2000-07-20 | Asm Microchemistry Oy | Menetelmä ohutkalvon kasvattamiseksi substraatille |
KR100444149B1 (ko) * | 2000-07-22 | 2004-08-09 | 주식회사 아이피에스 | Ald 박막증착설비용 클리닝방법 |
US6368954B1 (en) * | 2000-07-28 | 2002-04-09 | Advanced Micro Devices, Inc. | Method of copper interconnect formation using atomic layer copper deposition |
KR100630666B1 (ko) | 2000-08-09 | 2006-10-02 | 삼성전자주식회사 | 금속 콘택 및 커패시터를 포함하는 반도체 소자 제조방법 |
KR100396879B1 (ko) * | 2000-08-11 | 2003-09-02 | 삼성전자주식회사 | 동일 물질로 이루어진 이중막을 포함하는 다중막으로캡슐화된 캐패시터를 구비한 반도체 메모리 소자 및 그의제조 방법 |
US6302965B1 (en) | 2000-08-15 | 2001-10-16 | Applied Materials, Inc. | Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces |
JP4013022B2 (ja) | 2000-09-13 | 2007-11-28 | 日産自動車株式会社 | ジェットポンプ |
JP4304854B2 (ja) * | 2000-09-21 | 2009-07-29 | 宇部興産株式会社 | 多層ポリイミドフィルムおよび積層体 |
DE10064944A1 (de) * | 2000-09-22 | 2002-04-11 | Aixtron Ag | Verfahren zum Abscheiden von insbesondere kristallinen Schichten, Gaseinlassorgan sowie Vorrichtung zur Durchführung des Verfahrens |
US6685823B2 (en) * | 2000-10-16 | 2004-02-03 | Uniroyal Chemical Company, Inc. | C-nitrosoaniline compounds and their blends as polymerization inhibitors |
US6428847B1 (en) * | 2000-10-16 | 2002-08-06 | Primaxx, Inc. | Vortex based CVD reactor |
US6498091B1 (en) | 2000-11-01 | 2002-12-24 | Applied Materials, Inc. | Method of using a barrier sputter reactor to remove an underlying barrier layer |
KR100436941B1 (ko) | 2000-11-07 | 2004-06-23 | 주성엔지니어링(주) | 박막 증착 장치 및 그 방법 |
US6355561B1 (en) | 2000-11-21 | 2002-03-12 | Micron Technology, Inc. | ALD method to improve surface coverage |
US6613695B2 (en) | 2000-11-24 | 2003-09-02 | Asm America, Inc. | Surface preparation prior to deposition |
EP1340269B1 (en) * | 2000-11-30 | 2009-02-25 | Asm International N.V. | Thin films for magnetic devices |
US20020104481A1 (en) | 2000-12-06 | 2002-08-08 | Chiang Tony P. | System and method for modulated ion-induced atomic layer deposition (MII-ALD) |
US6428859B1 (en) | 2000-12-06 | 2002-08-06 | Angstron Systems, Inc. | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
KR100385947B1 (ko) | 2000-12-06 | 2003-06-02 | 삼성전자주식회사 | 원자층 증착 방법에 의한 박막 형성 방법 |
WO2002070142A1 (en) | 2000-12-06 | 2002-09-12 | Angstron Systems, Inc. | Method and apparatus for improved temperature control in atomic layer deposition |
KR100386034B1 (ko) | 2000-12-06 | 2003-06-02 | 에이에스엠 마이크로케미스트리 리미티드 | 확산 방지막의 결정립계를 금속산화물로 충진한 구리 배선구조의 반도체 소자 제조 방법 |
US6878402B2 (en) | 2000-12-06 | 2005-04-12 | Novellus Systems, Inc. | Method and apparatus for improved temperature control in atomic layer deposition |
US6949450B2 (en) * | 2000-12-06 | 2005-09-27 | Novellus Systems, Inc. | Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber |
US20020197402A1 (en) | 2000-12-06 | 2002-12-26 | Chiang Tony P. | System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
US6416822B1 (en) | 2000-12-06 | 2002-07-09 | Angstrom Systems, Inc. | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
US6368950B1 (en) * | 2000-12-12 | 2002-04-09 | Advanced Micro Devices, Inc. | Silicide gate transistors |
US6800173B2 (en) | 2000-12-15 | 2004-10-05 | Novellus Systems, Inc. | Variable gas conductance control for a process chamber |
US20020073924A1 (en) * | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Gas introduction system for a reactor |
US20020076481A1 (en) * | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Chamber pressure state-based control for a reactor |
US20020076507A1 (en) * | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Process sequence for atomic layer deposition |
US6630201B2 (en) * | 2001-04-05 | 2003-10-07 | Angstron Systems, Inc. | Adsorption process for atomic layer deposition |
TW554191B (en) * | 2000-12-16 | 2003-09-21 | Au Optronics Corp | Laminating structure and its forming method |
KR20020049875A (ko) * | 2000-12-20 | 2002-06-26 | 윤종용 | 반도체 메모리 소자의 강유전체 커패시터 및 그 제조방법 |
JP3963078B2 (ja) | 2000-12-25 | 2007-08-22 | 株式会社高純度化学研究所 | ターシャリーアミルイミドトリス(ジメチルアミド)タンタルとその製造方法及びそれを用いたmocvd用原料溶液並びにそれを用いた窒化タンタル膜の形成方法 |
KR20020056260A (ko) * | 2000-12-29 | 2002-07-10 | 박종섭 | 반도체 소자의 금속 게이트 형성방법 |
US20020086111A1 (en) * | 2001-01-03 | 2002-07-04 | Byun Jeong Soo | Method of forming refractory metal nitride layers using chemisorption techniques |
US20020127336A1 (en) | 2001-01-16 | 2002-09-12 | Applied Materials, Inc. | Method for growing thin films by catalytic enhancement |
KR100400031B1 (ko) | 2001-01-17 | 2003-09-29 | 삼성전자주식회사 | 반도체 소자의 콘택 플러그 및 그 형성 방법 |
KR100434487B1 (ko) | 2001-01-17 | 2004-06-05 | 삼성전자주식회사 | 샤워 헤드 및 이를 포함하는 박막 형성 장비 |
JP2002222934A (ja) | 2001-01-29 | 2002-08-09 | Nec Corp | 半導体装置およびその製造方法 |
US6844604B2 (en) | 2001-02-02 | 2005-01-18 | Samsung Electronics Co., Ltd. | Dielectric layer for semiconductor device and method of manufacturing the same |
US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
KR100400033B1 (ko) | 2001-02-08 | 2003-09-29 | 삼성전자주식회사 | 다층 배선 구조를 갖는 반도체 소자 및 그의 제조방법 |
KR100395766B1 (ko) | 2001-02-12 | 2003-08-25 | 삼성전자주식회사 | 강유전체 기억 소자 및 그 형성 방법 |
JP4866534B2 (ja) * | 2001-02-12 | 2012-02-01 | エーエスエム アメリカ インコーポレイテッド | 半導体膜の改良された堆積方法 |
US6613656B2 (en) | 2001-02-13 | 2003-09-02 | Micron Technology, Inc. | Sequential pulse deposition |
US20020117399A1 (en) | 2001-02-23 | 2002-08-29 | Applied Materials, Inc. | Atomically thin highly resistive barrier layer in a copper via |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US20020121241A1 (en) | 2001-03-02 | 2002-09-05 | Nguyen Anh N. | Processing chamber and method of distributing process fluids therein to facilitate sequential deposition of films |
US6734020B2 (en) | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
FI109770B (fi) * | 2001-03-16 | 2002-10-15 | Asm Microchemistry Oy | Menetelmä metallinitridiohutkalvojen valmistamiseksi |
US7348042B2 (en) | 2001-03-19 | 2008-03-25 | Novellus Systems, Inc. | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
US6369430B1 (en) | 2001-04-02 | 2002-04-09 | Motorola, Inc. | Method of preventing two neighboring contacts from a short-circuit caused by a void between them and device having the same |
JP3730962B2 (ja) | 2001-04-02 | 2006-01-05 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US20020144657A1 (en) | 2001-04-05 | 2002-10-10 | Chiang Tony P. | ALD reactor employing electrostatic chuck |
US20020144655A1 (en) | 2001-04-05 | 2002-10-10 | Chiang Tony P. | Gas valve system for a reactor |
US6561498B2 (en) | 2001-04-09 | 2003-05-13 | Lorex Industries, Inc. | Bubbler for use in vapor generation systems |
US6420189B1 (en) | 2001-04-27 | 2002-07-16 | Advanced Micro Devices, Inc. | Superconducting damascene interconnected for integrated circuit |
US20030019428A1 (en) * | 2001-04-28 | 2003-01-30 | Applied Materials, Inc. | Chemical vapor deposition chamber |
US6447933B1 (en) | 2001-04-30 | 2002-09-10 | Advanced Micro Devices, Inc. | Formation of alloy material using alternating depositions of alloy doping element and bulk material |
KR100363332B1 (en) | 2001-05-23 | 2002-12-05 | Samsung Electronics Co Ltd | Method for forming semiconductor device having gate all-around type transistor |
TW530739U (en) * | 2001-05-26 | 2003-05-01 | Salida Industry Co Ltd | Improved structure for carpentry corner chiseling machine |
US6828218B2 (en) * | 2001-05-31 | 2004-12-07 | Samsung Electronics Co., Ltd. | Method of forming a thin film using atomic layer deposition |
US6528884B1 (en) * | 2001-06-01 | 2003-03-04 | Advanced Micro Devices, Inc. | Conformal atomic liner layer in an integrated circuit interconnect |
DE10128573A1 (de) | 2001-06-13 | 2003-01-02 | Infineon Technologies Ag | Verhindern der unerwünschten externen Erfassung von Operationen in integrierten Digitalschaltungen |
US6686278B2 (en) * | 2001-06-19 | 2004-02-03 | United Microelectronics Corp. | Method for forming a plug metal layer |
US6849545B2 (en) | 2001-06-20 | 2005-02-01 | Applied Materials, Inc. | System and method to form a composite film stack utilizing sequential deposition techniques |
US6861334B2 (en) * | 2001-06-21 | 2005-03-01 | Asm International, N.V. | Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition |
JP4680429B2 (ja) * | 2001-06-26 | 2011-05-11 | Okiセミコンダクタ株式会社 | テキスト音声変換装置における高速読上げ制御方法 |
TW539822B (en) | 2001-07-03 | 2003-07-01 | Asm Inc | Source chemical container assembly |
US20030198754A1 (en) | 2001-07-16 | 2003-10-23 | Ming Xi | Aluminum oxide chamber and process |
US20030017697A1 (en) | 2001-07-19 | 2003-01-23 | Kyung-In Choi | Methods of forming metal layers using metallic precursors |
US7105444B2 (en) | 2001-07-19 | 2006-09-12 | Samsung Electronics Co., Ltd. | Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same |
US7098131B2 (en) | 2001-07-19 | 2006-08-29 | Samsung Electronics Co., Ltd. | Methods for forming atomic layers and thin films including tantalum nitride and devices including the same |
US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
JP2005504885A (ja) | 2001-07-25 | 2005-02-17 | アプライド マテリアルズ インコーポレイテッド | 新規なスパッタ堆積方法を使用したバリア形成 |
US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US6820570B2 (en) | 2001-08-15 | 2004-11-23 | Nobel Biocare Services Ag | Atomic layer deposition reactor |
US6548906B2 (en) | 2001-08-22 | 2003-04-15 | Agere Systems Inc. | Method for reducing a metal seam in an interconnect structure and a device manufactured thereby |
US6806145B2 (en) * | 2001-08-31 | 2004-10-19 | Asm International, N.V. | Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer |
US20030042630A1 (en) * | 2001-09-05 | 2003-03-06 | Babcoke Jason E. | Bubbler for gas delivery |
US6635544B2 (en) | 2001-09-07 | 2003-10-21 | Power Intergrations, Inc. | Method of fabricating a high-voltage transistor with a multi-layered extended drain structure |
JP4938962B2 (ja) * | 2001-09-14 | 2012-05-23 | エーエスエム インターナショナル エヌ.ヴェー. | ゲッタリング反応物を用いるaldによる金属窒化物堆積 |
US6718126B2 (en) * | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
US20030049931A1 (en) * | 2001-09-19 | 2003-03-13 | Applied Materials, Inc. | Formation of refractory metal nitrides using chemisorption techniques |
KR20030025494A (ko) | 2001-09-21 | 2003-03-29 | 삼성전자주식회사 | 루테늄막과 금속층간의 콘택을 포함하는 반도체 장치 및그의 제조 방법 |
US6607976B2 (en) | 2001-09-25 | 2003-08-19 | Applied Materials, Inc. | Copper interconnect barrier layer structure and formation method |
US6936906B2 (en) * | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
US20030059538A1 (en) * | 2001-09-26 | 2003-03-27 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
US20030057526A1 (en) * | 2001-09-26 | 2003-03-27 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
US6960537B2 (en) * | 2001-10-02 | 2005-11-01 | Asm America, Inc. | Incorporation of nitrogen into high k dielectric film |
US6797108B2 (en) | 2001-10-05 | 2004-09-28 | Applied Materials, Inc. | Apparatus and method for evenly flowing processing gas onto a semiconductor wafer |
TW589684B (en) | 2001-10-10 | 2004-06-01 | Applied Materials Inc | Method for depositing refractory metal layers employing sequential deposition techniques |
TW512504B (en) | 2001-10-12 | 2002-12-01 | Advanced Semiconductor Eng | Package substrate having protruded and recessed side edge |
US20030072884A1 (en) * | 2001-10-15 | 2003-04-17 | Applied Materials, Inc. | Method of titanium and titanium nitride layer deposition |
US20080102208A1 (en) * | 2001-10-26 | 2008-05-01 | Dien-Yeh Wu | Vortex chamber lids for atomic layer deposition |
US6916398B2 (en) * | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US7780785B2 (en) * | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US7780789B2 (en) * | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Vortex chamber lids for atomic layer deposition |
US7204886B2 (en) | 2002-11-14 | 2007-04-17 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
US20080102203A1 (en) * | 2001-10-26 | 2008-05-01 | Dien-Yeh Wu | Vortex chamber lids for atomic layer deposition |
AU2002343583A1 (en) | 2001-10-29 | 2003-05-12 | Genus, Inc. | Chemical vapor deposition system |
US6743681B2 (en) * | 2001-11-09 | 2004-06-01 | Micron Technology, Inc. | Methods of Fabricating Gate and Storage Dielectric Stacks having Silicon-Rich-Nitride |
US6620956B2 (en) * | 2001-11-16 | 2003-09-16 | Applied Materials, Inc. | Nitrogen analogs of copper II β-diketonates as source reagents for semiconductor processing |
US6423619B1 (en) | 2001-11-30 | 2002-07-23 | Motorola, Inc. | Transistor metal gate structure that minimizes non-planarity effects and method of formation |
US6773507B2 (en) * | 2001-12-06 | 2004-08-10 | Applied Materials, Inc. | Apparatus and method for fast-cycle atomic layer deposition |
US7081271B2 (en) * | 2001-12-07 | 2006-07-25 | Applied Materials, Inc. | Cyclical deposition of refractory metal silicon nitride |
US6729824B2 (en) * | 2001-12-14 | 2004-05-04 | Applied Materials, Inc. | Dual robot processing system |
US20030116087A1 (en) * | 2001-12-21 | 2003-06-26 | Nguyen Anh N. | Chamber hardware design for titanium nitride atomic layer deposition |
US6939801B2 (en) | 2001-12-21 | 2005-09-06 | Applied Materials, Inc. | Selective deposition of a barrier layer on a dielectric material |
US6560111B1 (en) * | 2001-12-28 | 2003-05-06 | Fang Tien Huang | Bracket for CPU cooler |
US6674138B1 (en) | 2001-12-31 | 2004-01-06 | Advanced Micro Devices, Inc. | Use of high-k dielectric materials in modified ONO structure for semiconductor devices |
US6827815B2 (en) | 2002-01-15 | 2004-12-07 | Applied Materials, Inc. | Showerhead assembly for a processing chamber |
AU2003238853A1 (en) | 2002-01-25 | 2003-09-02 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US6866746B2 (en) | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US6824816B2 (en) | 2002-01-29 | 2004-11-30 | Asm International N.V. | Process for producing metal thin films by ALD |
US7063981B2 (en) | 2002-01-30 | 2006-06-20 | Asm International N.V. | Active pulse monitoring in a chemical reactor |
US6777352B2 (en) | 2002-02-11 | 2004-08-17 | Applied Materials, Inc. | Variable flow deposition apparatus and method in semiconductor substrate processing |
US6972267B2 (en) | 2002-03-04 | 2005-12-06 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
US6753618B2 (en) | 2002-03-11 | 2004-06-22 | Micron Technology, Inc. | MIM capacitor with metal nitride electrode materials and method of formation |
US20030216981A1 (en) | 2002-03-12 | 2003-11-20 | Michael Tillman | Method and system for hosting centralized online point-of-sale activities for a plurality of distributed customers and vendors |
TW552501B (en) | 2002-03-22 | 2003-09-11 | Taiwan Semiconductor Mfg | Version recording and tracking method |
US6720027B2 (en) | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
US6846516B2 (en) | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
US6875271B2 (en) | 2002-04-09 | 2005-04-05 | Applied Materials, Inc. | Simultaneous cyclical deposition in different processing regions |
US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
US6932871B2 (en) | 2002-04-16 | 2005-08-23 | Applied Materials, Inc. | Multi-station deposition apparatus and method |
US20030235961A1 (en) | 2002-04-17 | 2003-12-25 | Applied Materials, Inc. | Cyclical sequential deposition of multicomponent films |
US6778762B1 (en) | 2002-04-17 | 2004-08-17 | Novellus Systems, Inc. | Sloped chamber top for substrate processing |
US6659543B2 (en) | 2002-04-18 | 2003-12-09 | 9110-3309 Quebec Inc. | Convertible bench and table assembly |
US7164165B2 (en) | 2002-05-16 | 2007-01-16 | Micron Technology, Inc. | MIS capacitor |
US20030213560A1 (en) | 2002-05-16 | 2003-11-20 | Yaxin Wang | Tandem wafer processing system and process |
KR100505043B1 (ko) | 2002-05-25 | 2005-07-29 | 삼성전자주식회사 | 커패시터 형성 방법 |
US7041335B2 (en) | 2002-06-04 | 2006-05-09 | Applied Materials, Inc. | Titanium tantalum nitride silicide layer |
US7910165B2 (en) | 2002-06-04 | 2011-03-22 | Applied Materials, Inc. | Ruthenium layer formation for copper film deposition |
US7264846B2 (en) | 2002-06-04 | 2007-09-04 | Applied Materials, Inc. | Ruthenium layer formation for copper film deposition |
US7404985B2 (en) | 2002-06-04 | 2008-07-29 | Applied Materials, Inc. | Noble metal layer formation for copper film deposition |
US7183604B2 (en) * | 2002-06-10 | 2007-02-27 | Interuniversitair Microelektronica Centrum (Imec Vzw) | High dielectric constant device |
US7067439B2 (en) * | 2002-06-14 | 2006-06-27 | Applied Materials, Inc. | ALD metal oxide deposition process using direct oxidation |
KR100476926B1 (ko) | 2002-07-02 | 2005-03-17 | 삼성전자주식회사 | 반도체 소자의 듀얼 게이트 형성방법 |
US6838125B2 (en) * | 2002-07-10 | 2005-01-04 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
WO2004008493A2 (en) | 2002-07-15 | 2004-01-22 | Aviza Technology, Inc. | Method and apparatus for supporting semiconductor wafers |
US20040013803A1 (en) * | 2002-07-16 | 2004-01-22 | Applied Materials, Inc. | Formation of titanium nitride films using a cyclical deposition process |
US7081409B2 (en) | 2002-07-17 | 2006-07-25 | Samsung Electronics Co., Ltd. | Methods of producing integrated circuit devices utilizing tantalum amine derivatives |
US6955211B2 (en) * | 2002-07-17 | 2005-10-18 | Applied Materials, Inc. | Method and apparatus for gas temperature control in a semiconductor processing system |
US7524374B2 (en) | 2002-07-17 | 2009-04-28 | Applied Materials, Inc. | Method and apparatus for generating a precursor for a semiconductor processing system |
US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
US7066194B2 (en) | 2002-07-19 | 2006-06-27 | Applied Materials, Inc. | Valve design and configuration for fast delivery system |
KR100468852B1 (ko) * | 2002-07-20 | 2005-01-29 | 삼성전자주식회사 | 캐패시터 구조체 형성 방법 |
US6772072B2 (en) * | 2002-07-22 | 2004-08-03 | Applied Materials, Inc. | Method and apparatus for monitoring solid precursor delivery |
US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
US7300038B2 (en) | 2002-07-23 | 2007-11-27 | Advanced Technology Materials, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
TWI230544B (en) * | 2002-07-25 | 2005-04-01 | Veutron Corp | Light source control method and apparatus of image scanner |
US6915592B2 (en) | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
KR100542736B1 (ko) * | 2002-08-17 | 2006-01-11 | 삼성전자주식회사 | 원자층 증착법을 이용한 산화막의 형성방법 및 이를이용한 반도체 장치의 캐패시터 형성방법 |
US7222636B2 (en) | 2002-08-20 | 2007-05-29 | Applied Materials, Inc. | Electronically actuated valve |
US6958300B2 (en) * | 2002-08-28 | 2005-10-25 | Micron Technology, Inc. | Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides |
US6790773B1 (en) | 2002-08-28 | 2004-09-14 | Novellus Systems, Inc. | Process for forming barrier/seed structures for integrated circuits |
JP3925360B2 (ja) * | 2002-08-30 | 2007-06-06 | ブリヂストンスポーツ株式会社 | ゴルフクラブヘッド |
US6875678B2 (en) * | 2002-09-10 | 2005-04-05 | Samsung Electronics Co., Ltd. | Post thermal treatment methods of forming high dielectric layers in integrated circuit devices |
US6784096B2 (en) | 2002-09-11 | 2004-08-31 | Applied Materials, Inc. | Methods and apparatus for forming barrier layers in high aspect ratio vias |
JP2004111447A (ja) * | 2002-09-13 | 2004-04-08 | Handotai Rikougaku Kenkyu Center:Kk | 半導体装置及びその製造方法 |
US6759286B2 (en) * | 2002-09-16 | 2004-07-06 | Ajay Kumar | Method of fabricating a gate structure of a field effect transistor using a hard mask |
US6946033B2 (en) | 2002-09-16 | 2005-09-20 | Applied Materials Inc. | Heated gas distribution plate for a processing chamber |
US20040065255A1 (en) | 2002-10-02 | 2004-04-08 | Applied Materials, Inc. | Cyclical layer deposition system |
US6821563B2 (en) | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
US20040069227A1 (en) | 2002-10-09 | 2004-04-15 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
US6905737B2 (en) | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
US6716287B1 (en) | 2002-10-18 | 2004-04-06 | Applied Materials Inc. | Processing chamber with flow-restricting ring |
US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
US7244683B2 (en) | 2003-01-07 | 2007-07-17 | Applied Materials, Inc. | Integration of ALD/CVD barriers with porous low k materials |
US6868859B2 (en) | 2003-01-29 | 2005-03-22 | Applied Materials, Inc. | Rotary gas valve for pulsing a gas |
US6994319B2 (en) | 2003-01-29 | 2006-02-07 | Applied Materials, Inc. | Membrane gas valve for pulsing a gas |
US6818094B2 (en) | 2003-01-29 | 2004-11-16 | Applied Materials, Inc. | Reciprocating gas valve for pulsing a gas |
US7442415B2 (en) | 2003-04-11 | 2008-10-28 | Sharp Laboratories Of America, Inc. | Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films |
US20050070126A1 (en) | 2003-04-21 | 2005-03-31 | Yoshihide Senzaki | System and method for forming multi-component dielectric films |
TW200506093A (en) | 2003-04-21 | 2005-02-16 | Aviza Tech Inc | System and method for forming multi-component films |
US6919250B2 (en) * | 2003-05-21 | 2005-07-19 | Advanced Micro Devices, Inc. | Multiple-gate MOS device and method for making the same |
JP5342110B2 (ja) | 2003-05-27 | 2013-11-13 | アプライド マテリアルズ インコーポレイテッド | 前駆物質を含むソースキャニスタ及びこれを用いて特徴部を充填する方法 |
US6911093B2 (en) | 2003-06-02 | 2005-06-28 | Lsi Logic Corporation | Lid liner for chemical vapor deposition chamber |
US6881437B2 (en) | 2003-06-16 | 2005-04-19 | Blue29 Llc | Methods and system for processing a microelectronic topography |
KR20060079144A (ko) | 2003-06-18 | 2006-07-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 배리어 물질의 원자층 증착 |
JP4087323B2 (ja) | 2003-09-25 | 2008-05-21 | 株式会社東芝 | 液体タンクおよび燃料電池 |
US7408225B2 (en) * | 2003-10-09 | 2008-08-05 | Asm Japan K.K. | Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms |
US8536492B2 (en) | 2003-10-27 | 2013-09-17 | Applied Materials, Inc. | Processing multilayer semiconductors with multiple heat sources |
US20050095859A1 (en) | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
US20050104142A1 (en) | 2003-11-13 | 2005-05-19 | Vijav Narayanan | CVD tantalum compounds for FET get electrodes |
US20050153571A1 (en) | 2003-11-17 | 2005-07-14 | Yoshihide Senzaki | Nitridation of high-k dielectric films |
US6983892B2 (en) | 2004-02-05 | 2006-01-10 | Applied Materials, Inc. | Gas distribution showerhead for semiconductor processing |
US7067422B2 (en) | 2004-03-31 | 2006-06-27 | Tokyo Electron Limited | Method of forming a tantalum-containing gate electrode structure |
US20050252449A1 (en) * | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US8323754B2 (en) | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
US20060062917A1 (en) | 2004-05-21 | 2006-03-23 | Shankar Muthukrishnan | Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane |
US20060019033A1 (en) | 2004-05-21 | 2006-01-26 | Applied Materials, Inc. | Plasma treatment of hafnium-containing materials |
US20060153995A1 (en) | 2004-05-21 | 2006-07-13 | Applied Materials, Inc. | Method for fabricating a dielectric stack |
US7241686B2 (en) | 2004-07-20 | 2007-07-10 | Applied Materials, Inc. | Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA |
KR20070089197A (ko) | 2004-11-22 | 2007-08-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 배치 처리 챔버를 사용한 기판 처리 기기 |
US7429402B2 (en) | 2004-12-10 | 2008-09-30 | Applied Materials, Inc. | Ruthenium as an underlayer for tungsten film deposition |
US7265048B2 (en) | 2005-03-01 | 2007-09-04 | Applied Materials, Inc. | Reduction of copper dewetting by transition metal deposition |
US20070020890A1 (en) | 2005-07-19 | 2007-01-25 | Applied Materials, Inc. | Method and apparatus for semiconductor processing |
US7317229B2 (en) | 2005-07-20 | 2008-01-08 | Applied Materials, Inc. | Gate electrode structures and methods of manufacture |
US20070019371A1 (en) * | 2005-07-22 | 2007-01-25 | E-Lead Electronic Co., Ltd. | Multimedia display device attached to a sunroof of vehicles |
US7464917B2 (en) | 2005-10-07 | 2008-12-16 | Appiled Materials, Inc. | Ampoule splash guard apparatus |
US7850779B2 (en) | 2005-11-04 | 2010-12-14 | Applied Materisals, Inc. | Apparatus and process for plasma-enhanced atomic layer deposition |
DE102006014996A1 (de) | 2006-03-31 | 2007-10-04 | Robert Bosch Gmbh | Verfahren zum Betrieb einer Brennkraftmaschine |
-
2001
- 2001-12-21 US US10/032,284 patent/US6916398B2/en not_active Expired - Lifetime
-
2002
- 2002-07-10 US US10/193,333 patent/US20030082307A1/en not_active Abandoned
- 2002-07-18 US US10/199,415 patent/US20030082301A1/en not_active Abandoned
- 2002-10-25 CN CN028239032A patent/CN1774525B/zh not_active Expired - Lifetime
- 2002-10-25 CN CNB2007101017141A patent/CN100524692C/zh not_active Expired - Lifetime
- 2002-10-25 KR KR10-2004-7006190A patent/KR20040058239A/ko not_active Application Discontinuation
- 2002-10-25 US US10/281,386 patent/US20030124262A1/en not_active Abandoned
-
2005
- 2005-03-11 US US11/077,753 patent/US7780788B2/en not_active Expired - Fee Related
-
2006
- 2006-09-07 US US11/470,915 patent/US8293328B2/en active Active
- 2006-09-07 US US11/470,922 patent/US8318266B2/en not_active Expired - Fee Related
- 2006-10-16 US US11/549,941 patent/US20070099415A1/en not_active Abandoned
-
2007
- 2007-10-17 US US11/873,885 patent/US20080038463A1/en not_active Abandoned
-
2010
- 2010-06-10 US US12/797,999 patent/US8668776B2/en not_active Expired - Lifetime
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101528973B (zh) * | 2006-10-24 | 2012-04-25 | 应用材料公司 | 用于原子层沉积的涡流室盖 |
CN102586761B (zh) * | 2006-10-24 | 2014-10-15 | 应用材料公司 | 用于原子层沉积的涡流室盖 |
CN102586760B (zh) * | 2006-10-24 | 2016-07-06 | 应用材料公司 | 用于原子层沉积的涡流室盖 |
CN101809196B (zh) * | 2007-09-26 | 2013-07-10 | 伊斯曼柯达公司 | 用于形成薄膜的沉积系统 |
US8778079B2 (en) | 2007-10-11 | 2014-07-15 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
CN102144281A (zh) * | 2008-09-08 | 2011-08-03 | 应用材料股份有限公司 | 原位腔室处理与沉积工艺 |
CN102144281B (zh) * | 2008-09-08 | 2014-06-25 | 应用材料公司 | 原位腔室处理与沉积工艺 |
CN110662858A (zh) * | 2017-02-02 | 2020-01-07 | 弗谢沃洛德·弗拉基米罗维奇·龙丁 | 将气体供应至反应器中以生长基于iii族金属氮化物的外延结构的方法、以及用于实施该方法的装置 |
CN110662858B (zh) * | 2017-02-02 | 2021-10-08 | 弗谢沃洛德·弗拉基米罗维奇·龙丁 | 供应气体以生长基于ⅲ族金属氮化物的外延结构的方法 |
CN108060410A (zh) * | 2017-12-15 | 2018-05-22 | 浙江晶盛机电股份有限公司 | 用于平板式pecvd的进气管道保护结构 |
CN108060410B (zh) * | 2017-12-15 | 2023-08-18 | 浙江晶盛机电股份有限公司 | 用于平板式pecvd的进气管道保护结构 |
CN112378603A (zh) * | 2020-11-18 | 2021-02-19 | 北京自动化控制设备研究所 | 原子气室的漏率检测方法及系统 |
Also Published As
Publication number | Publication date |
---|---|
US20070099415A1 (en) | 2007-05-03 |
US20070026147A1 (en) | 2007-02-01 |
CN101174577A (zh) | 2008-05-07 |
US7780788B2 (en) | 2010-08-24 |
CN100524692C (zh) | 2009-08-05 |
KR20040058239A (ko) | 2004-07-03 |
US8668776B2 (en) | 2014-03-11 |
US20070003698A1 (en) | 2007-01-04 |
US20100247767A1 (en) | 2010-09-30 |
US20030124262A1 (en) | 2003-07-03 |
US20050173068A1 (en) | 2005-08-11 |
US20080038463A1 (en) | 2008-02-14 |
US6916398B2 (en) | 2005-07-12 |
US8318266B2 (en) | 2012-11-27 |
US8293328B2 (en) | 2012-10-23 |
US20030082301A1 (en) | 2003-05-01 |
US20030079686A1 (en) | 2003-05-01 |
US20030082307A1 (en) | 2003-05-01 |
CN1774525B (zh) | 2010-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1774525A (zh) | 用于原子层淀积的气体输送装置 | |
JP5371917B2 (ja) | 原子層堆積のためのガス配送装置 | |
KR102640272B1 (ko) | 원자 층 증착 챔버들을 위한 덮개들 및 덮개 키트들 | |
US6866746B2 (en) | Clamshell and small volume chamber with fixed substrate support | |
US7780785B2 (en) | Gas delivery apparatus for atomic layer deposition | |
US7056806B2 (en) | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces | |
US6821347B2 (en) | Apparatus and method for depositing materials onto microelectronic workpieces | |
KR101852233B1 (ko) | 성막 방법 | |
TWI576460B (zh) | 具有多注射道之原子層沉積腔室 | |
TWI542725B (zh) | 誘導處理室清潔氣體之紊流的方法及設備 | |
JP2009529223A (ja) | 小体積対称流れシングルウェハald装置 | |
US20150262816A1 (en) | Method of manufacturing semiconductor device and substrate processing apparatus | |
TW201511159A (zh) | 具備紫外線處理之沉積室及其使用方法 | |
JP2010202982A (ja) | 基板処理装置、基板処理方法及び半導体装置の製造方法 | |
KR101432257B1 (ko) | 원자 층 증착을 위한 보텍스 챔버 리드 | |
JP5303984B2 (ja) | 成膜装置及び成膜方法 | |
JP2008025007A (ja) | 基板処理装置および半導体装置の製造方法 | |
KR100956189B1 (ko) | 원자층 증착용 가스 전달 장치 | |
KR101804127B1 (ko) | 박막 증착 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20100616 |