CN1791967A - 使用压印平板印刷术形成有台阶的结构的方法 - Google Patents
使用压印平板印刷术形成有台阶的结构的方法 Download PDFInfo
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- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76817—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics using printing or stamping techniques
Abstract
本发明提供用于在基底(31)上形成有台阶的结构(34a、34b、34c)的方法,其特征在于,将在基底上设置的有台阶的结构的颠倒形状转移进入该基底。
Description
技术领域
本发明的领域总体上涉及结构的微型制造。更具体地,本发明涉及形成适合用于镶嵌加工的有图案的基体。
背景技术
微型制造包括制造很小的结构,例如具有微米或更更小数量级的结构特征。其中微型制造具有相当大影响的一领域是在集成电路的加工中。随着半导体加工工业继续争取较大的生产量、同时增加在基底上形成的单位面识的电路,微型制造变得越来越重要。微型制造提供更大的加工控制,同时允许不断地缩小所形成的结构的最小特征尺寸。
在集成电路的制造期间所采用的普通加工包括金属导线和触点的制造。触点互连被绝缘层分离的诸相邻的导线。通常通过在基底中形成称为道路和沟槽的台阶结构制造导线和触点。用其形成道路—沟槽台阶结构的通用方法称为镶嵌加工。
镶嵌包括在绝缘层中形成凹槽并用例如铝、铜等的导电材料充填该凹槽。以这方式,在凹槽中形成导线。为了形成触点以及导线,通常使用双镶嵌加工,用于在其中形成凹槽的绝缘层区域内形成一道路。
一示例的双镶嵌加工在绝缘层上制造一道路的图像图案。为此,绝缘层用光致抗蚀剂包复,并通过适当的掩膜被暴露,然后暴露该掩膜,用于形成道路的图像图案。该图案被非均质地蚀刻在绝缘层的上部内。然后在与第一掩膜图案对齐以包围该道路之后通过带有凹槽的图像图案的一第二掩膜暴露光致抗蚀剂。用于在绝缘材料的上部中的导线的非均质地蚀刻凹槽造成已经存在于绝缘层的上部内的该道路被同步蚀刻和复制在绝缘材料的下部中。在完成蚀刻之后,用导电金属材料充填道路和凹槽。用导电材料同步充填凹槽和道路是在单一镶嵌加工方面的改进。但是,双镶嵌加工带有缺点,例如要求在两不同掩模之间对齐。此外,对于相对于道路恰当地定位凹槽、对齐变得很关键,以致增加了加工时间和掩膜所要求的成本。
因此,需要提供用于形成台阶结构的改进加工,以促进集成电路的制造。
发明内容
本发明提供用于在基底上形成有台阶的结构的方法,其中将多层排列结构的颠倒形状转移进入基底。在一实施例中,多层排列结构包括具有一凸出部分和诸肩部的双高度凸起。凸出部分具有顶表面,诸肩部与顶表面和基底隔开,形成该形状。关于本发明的一示例性使用是自对齐的沟槽—道路结构的形成。为此,道路部分的尺寸被确定为凸出部分的尺寸的一函数。沟槽部分的尺寸被确定为肩部尺寸的一函数。在另一实施例中,多层排列结构是形成在基底上的一岛部。本文将叙述这些和其它实施例。
附图说明
图1是按照本发明的平版印刷系统的立体图;
图2是用于产生按照本发明的有图案的压印层的在图1中示出的平版印刷系统的简化的视图;
图3是按照本发明在被聚合和交联之前由其组成图2所示的有图案的压印层的材料的简化视图;
图4是按照本发明在受到辐射之后图3所示的材料转变成的交联的聚合材料的简化视图;
图5是按照本发明形成图案之后与图1所示的有图案的压印层分开的压印装置的简化的横剖视图;
图6是按照本发明的一实施例通过在其附近覆盖一蚀刻选择层形成多层结构之后图5所示的有图案的压印层的简化的横剖视图;
图7是按照本发明的一实施例在图6所示的多层结构的覆盖层蚀刻形成冠表面之后的简化的横剖视图;
图8是按照本发明的一实施例在冠表面受到蚀刻在基底中形成道路部分之后图7所示的多层结构的简化剖视图;
图9是按照本发明的一实施例在冠表面受到非均质的蚀刻形成与道路部分对齐的沟槽部分之后的图8所示的多层结构的简化剖视图;
图10是按照本发明的一实施例在道路部分和沟槽部分内沉积导电材料之后图9所示的多层结构的简化横剖视图;
图11是按照本发明的一第一可替换的实施例在图6所示的多层结构的覆盖层蚀刻形成冠表面之后的简化横剖视图;
图12是在冠表面受到非均质的蚀刻在基底中形成道路部分的一第一部分之后图11所示的多层结构的简化横剖视图;
图13是在冠表面受到覆盖层蚀刻以露出有图案的压印层的诸区域和形成道路部分的一第二部分之后图12所示的多层结构的简化横剖视图;
图14是在冠表面受到非均质的氟蚀刻形成沟槽部分和道路部分的一第二部分时图13所示的多层结构的简化横剖视图;
图15是按照本发明的一第二可替换的实施例的图5所示的凸起的俯视图;
图16是按照本发明的一第三可替换的实施例的图5所示的凸起的俯视图。
图17是按照本发明的一第四可替换的实施例的图5所示的凸起的剖视图。
图18是按照本发明的一第五可替换的实施例的图17所示的凸起的俯视图。
图19是按照本发明的一第六可替换的实施例的图17所示的凸起的俯视图。
图20是在其中形成有为图17所示凸起的颠倒形状的凹槽的基底的剖视图;
图21是按照本发明的一第七可替换的实施例的在其上形成有诸岛部的一基底的横剖视图;
图22是示出模子和有图案层的简化横剖视图,该有图案层具有与用于形成图21所示的凸起的模子互补的一形状;
图23是示出沉积在图22所示的有图案层上的蚀刻选择层的蚀刻之后形成的冠表面的横剖视图;
图24是冠表面受到蚀刻以露出基底的诸区域之后图23所示的多层结构的横剖视图;以及
图25是按照本发明的一第八可替换的实施例图5所示的基底和压印装置的简化横剖视图。
具体实施方式
图1示出了按照本发明的一实施例的平版印刷系统10,该系统包括一对分开的桥支持件12,并具有在之间延伸的桥接件14和台架支持件16。桥接件14和台架支持件16相互分开。连接于桥接件14的是压印头18,压印头从桥接件14朝台架支持件16延伸。设置在台架支持件16上、面对压印头18的是运动台20。运动台20被构成相对于台架支持件16沿X和Y轴线运动。辐射源22连接于系统10,用于将光化辐射撞击在运动台20上。如图所示,辐射源22连接于桥接件14,并包括连接于辐射源22的电源发生器23。
参照图1和2,连接于压印头18的是在其中具有有图案的模子27的基底26。有图案的模子27包括具有在其中形成图案的表面27a。由许多分开的凹槽28和凸起29形成图案。凹槽28具有台阶部分29b位于侧面的凹槽部分29a的台阶形状。各凹槽28的组合宽度“Wc”是凹槽部分29a的宽度“W1”和2W2的总和,其中W2是其中一个台阶部分29b的宽度。凸起29具有宽度“W3”。以横向于Z轴线延伸的一方向测量各宽度W1、W2和W3。原始图形将转移进入位于运动台20上的基底31内。基底31通常包括由例如硅的适当材料制成的晶片31a。基底31还可以包括具有沉积在其上的一或多层材料的晶片31a。在本例子中,基底31被示为包括例如成份为SiwCxOyHz的有机硅酸盐玻璃(OSG)的绝缘材料的多层31c和31e。OSG的相邻层31c和31e可以由例如一氮化钛的任何合适材料形成的蚀刻障碍层31d分开。附加的蚀刻障碍层31b可以位于绝缘层31c和晶片31a之间。
参照图2和3,例如有图案的压印层34的可流动区设置在呈现为基本上光滑外形的表面32的一部分上。可以使用任何已知技术形成可流动的区域,这些已知技术例如是在美国专利号5,772,902(该专利的全部内容结合在此供参考)中所揭示的热模压加工或者在2002年6月出版的自然杂志、835-837页上,417栏上登载的Cou等人的文章“在硅中诺米结构的超快的和直接的刻印”中所述类型的激光直接刻印(LADI)加工。但是,在该实施例中,可流动的区域包括设置为在基底31上材料36a的许多相互分开的单独的珠36的有图案的压印层34,以下将对它详细讨论。基本上无硅材料36a形成有图案的压印层34,该材料可以选择地被聚合和交联,以在其中记录原始图案,形成被记录的图案。材料36a在图4中被示为在诸点36b处被交联,形成交联的聚合材料36c。由约48%重量的可从伊利诺伊州、Niles、聚合科学公司得到的丙烯酸环己酯、单体;约48%重量的可从密苏里州、圣路易斯的Sigma-Aldrich公司得到的乙二醇双丙烯酸酯、交联剂;以及约4%重量的可从纽约州、Tarrytown的Ciba得到的商标名为Darocur的自由基生成元的化合物形成材料36a的一示例性
实施例。
参阅图2、3和5,部分地通过与有图案的模子27的机械接触产生记录在有图案的压印层34中的图案。为此,如图1所示,压印头18适合于沿着Z轴线运动和改变在图案的模子27和基底31之间的距离“d”。以这方式,有图案的模子27扩散诸珠滴36,以致形成带有在表面32上的材料36a的连续成形的有图案的压印层34。或者在与压印头18的结合中,运动台20可以沿着Z轴线运动基底,以允许在诸珠滴36和有图形的模子27之间机械接触。在一实施例中,缩小距离“d”,以允许有图案的压印层34的分部分34c撞击进入和充填凹槽28。这便于在有图案的模子27上的原始图案被撞击进入基底31的可流动区。
为了便于充填凹槽28,材料36a设置有完全填满凹槽28的必要性能,同时覆盖表面32带有材料36a的连续成形。在该实施例中,在达到所需的、通常最小的距离“d”之后,留有与凸起29重叠的有图案的压印层34的分部分34c,保留凸出部分34a有厚度t1,肩部34b有厚度t2和分部分有厚度t3。凸出部分34a和肩部34b在基底31的表面32上形成双高度凸起。分部分34c称为剩余层,而厚度t3为剩余厚度。根据应用情况,厚度“t1”、“t2”和“t3”可以是任何所需厚度。
参阅图2、3和4,在达到所需的距离“d”之后,辐射源22产生聚合和交联材料36a的光化辐射,形成交联的聚合材料。因此,有图案的压印层34的成分从材料36a转变成为固体的材料36c。尤其,材料36c被固化,以提供带有与有图案的模子27的表面27a的形状一致的形状的有图案的压印层34的侧面34d,如图5更清楚地所示。以这方式,在基底31上形成许多固化的双高度凸起34e。在有图案的压印层34被转变成由如图4所示的材料36c组成之后,移动图1所示的压印头18,以增加距离“d”,以致有图案的模子27和有图案的压印层34分开。
将双高度凸起34e的颠倒形状转移进入基底31,用于在其中形成道路部分(未示出)和沟槽部分(未示出)。以这方式,道路部分(未示出)的尺寸被确定为凸出部分34a的尺寸的函数,以及沟槽部分(未示出)的尺寸被确定为肩部34b的尺寸的函数。因此,如图6所示,在形成固化的双高度凸起34e之后在有图案的压印层34附近设置蚀刻选择层40。基底31、有图案的压印层34和蚀刻选择层40形成多层结构38。
参阅图6,可使用任何已知加工、包括化学气相沉积(CVD)、物理气相沉积(PVD)、溅射和旋转涂复(spin-on)技术施加蚀刻选择层40。当记录图形每单位面积具有许多结构特征、即密集的有结构特征的图案时蚀刻选择层40的旋转涂复沉积可以是有利的。在该例子中,使用压印平板印刷加工、例如相对于沉积有图案的压印层34以上所讨论的那些加工沉积蚀刻选择层40。为此,除了从其形成蚀刻选择层40的材料包括硅,即为含硅聚合材料之外,可以从类似于相对于图3和4以上所述的聚合材料的一聚合材料形成蚀刻选择层40。用作为蚀刻选择层40的一示例性化合物是由约48%重量的可从宾夕法尼亚州、Morrisville的Gelest公司得到的生产代号为SIA的甲硅烷基丙烯酸;约24%重量的可从密苏里州、圣路易斯的Sigma-Aldrin公司得到的丁基丙稀酸;约24%重量的可从宾夕法尼亚州、Morrisville的Gelest公司得到的生产代码为SIB 1402的甲硅烷基二甲丙烯酸;以及约4%重量的从纽约州、Tarrytown的Ciba可得到的商标名为Darocur的自由基生成元形成。蚀刻选择层40包括第一和第二相对侧。第一侧40b面对有图案的压印层34,并具有与有图案的压印层34的外形互补的外形。第二侧面对离开有图案的压印层34的方向,形成规范表面40a。通过保证在各凸出部分34a的顶表面34f和规范表面40a之间的距离基本上相同、在各肩部34b和规范表面40a之间的距离基本上相同以及在各分部分34c的最低表面34g(如图6所示)和规范表面40a之间的距离相同,规范表面40a设置有基本规范的外形。以其对规范表面40a提供规范化外形的一方式包括使用具有将与蚀刻选择层40接触的光滑表面、即无结构特征表面127a的模子127。如以上所述,通过如图1所示沿着Z轴线移动压印头18、沿着Z轴线移动运动台20或两者,可以完成这工作。因此,使模子127与蚀刻选择层40分开,并且光化辐射撞击在蚀刻选择层40上,用于聚合,从而固化蚀刻选择层。
参阅图6和7,利用覆盖层蚀刻,用于去除蚀刻选择层40的诸部分,以提供带冠表面38a的多层结构38。一示例性蚀刻加工采用CF4等离子体蚀刻,其中蚀刻气体的主要部分由CF4组成。从2003年2月23日到2月28在加利福尼亚州、Santa Clara举行的SPIE微平版印刷会议散发的白皮书内、在“分级的和快速的压印平版印刷中的进步”中Johnson等人讨论了一示例的蚀刻化学。在覆盖层蚀刻之后由各凸出部分34a的暴露的顶表面30f和保留在蚀刻选择层40上的诸部分40c的上表面形成冠表面38a。
参阅图7和8,冠表面38a受到非均质的蚀刻。选择非均质的蚀刻的蚀刻化学,用于对如图6所示的、处于相互重叠的有图案的压印层34的部分40c的蚀刻最小。在该例子中,利用了有图案的压印层34和蚀刻选择层40之间的硅含量的不同。尤其,使用其中氧为主要气体的等离子体蚀刻,确定了在靠近冠表面38a的诸部分40c的诸区域中将产生现场硬化的掩膜42。从2003年2月23日到2月28日在加利福尼亚州、Santa Clara举行的SPIE微平版印刷会议散发的白皮书内,在“分级的和快速的压印平版印刷中的进步”中Johnson等人讨论了一示例的蚀刻化学。作为硬化的掩膜42和蚀刻加工的非均质的结果,露出在与凸出部分34a重叠关系的基体31上的诸区域44。在该例子中,区域44是图2所示的蚀刻障碍层31b的暴露区。区域44的宽度U优选地等于图2所示的宽度W2。
参阅图8,在区域44暴露之后,采用例如2003年2月23日到2月28日在加利福尼亚州、Santa Clara举行的SPIE微平版印刷会方散发的白皮书内“分级的和快速的压印平版印刷中的进步”中Johnson等人讨论的采用CF4气体的一类型的氟为基的等离子蚀刻,以去除如图7所示与硬化掩膜42为重叠关系的多层结构38的诸区域,用于暴露如图9所示的诸区域45a和45b,该各区域具有宽度U’,该宽度优选地等于W2。区域45a和45b形成凹槽部分46,从区域45a和45b延伸到区域44的通路48形成道路部分。凹槽部分46形成沟槽部分,通路48形成道路部分。使用随后的蚀刻加工去除层34和40的其余部分。因此,可以同时用、例如铝、铜、钨、钛、钛—钨合金或它们的组合物等的导电材料充填道路部分和沟槽部分,形成独点50和导线52,如图10所示。
参阅图2、7和8,该加工的优点是多方面的。例如由于存在硬化的掩膜42,在部分40c和露出的顶表面30f之间相对的蚀刻速率在约1.5∶1至约100∶1的范围内。因此,可以在基底31中形成自对齐的道路和沟槽,同时精确地控制它们的尺寸。这减少了图5示出的双高度凸起34e的颠倒形状上的图案进入基底31内的转移失真。
此外,参阅图5和9,尺寸宽度U和U’的控制变得相对独立于剩余厚度t3。聚合流体充填在有图案的模子27上的图案的速率反比于剩余厚度t3的立方。因此,可以选择剩余厚度t3,使生产量最大而不是显著增加传移失真。最后,在从基本上无硅聚合流体形成有图案的压印层34便于有图案的模子27的清洁加工,尤其考虑到通常从熔融的硅石形成有图案的模子27。
参阅图2和11,本发明的附加优点是可以不需要使用蚀刻障碍层31d和31b。如众所周知的那样,通过避免使用蚀刻障碍层31d和31b,可以降低基底的总介电常数,从而使这加工适合于制造道路和沟槽,以促进高速集成电路的制造。为此,建立蚀刻条件,以致由其建立在区域140c中所示的蚀刻选择层和绝缘层131c的材料基本上对用于去除从其形成有图案的压印层34的材料的蚀刻化学不起作用。在该例子中,由其形成区域140c和绝缘层131c的材料对氧等离子体蚀刻相对地不起作用。
参阅图11和12,以相对于图7中的冠表面38a所讨论的方式形成的冠表面138a受到氧等离子体蚀刻。作为上述蚀刻选择性差异的结果,顶表面130f与示为M1的凸出部分134a的整个范围一起、与从而重叠在压印材料层134中的所有材料一起被去除。以这方式,形成了道路部分的一第一部分148a。
采用如以上所讨论的氟基化学作用进行随后的覆盖层等离子体蚀刻。覆盖层蚀刻去除图11所示的硬化掩膜142和区域140c,以露出图13所示的肩部134b。同时对于露出的肩部134b,通过去除示为M2的绝缘层131c的材料形成道路部分(未示出)的一第二部分148b。
参阅图13和14,进行非均质的氧为基的等离子体蚀刻,以去除硬化肩部134b以及与其重叠关系的压印材料层134的材料,用于露出绝缘层131c的区域145a和145b,从而形成沟槽部分146。同时对于露出区域145a和145b,通过去除示为M3的绝缘层131c的材料形成道路部分的一第三部分148c。道路部分148a、148b、148c的组合长度形成了与沟槽部分146对齐的道路部分148。以这方式,可以制造自对齐的道路和沟槽。
参阅图5和15,虽然相对于形成自对齐道路和沟槽讨论了本发明,也可以应用本发明形成各种各样的多层排列结构。例如,如图5所示,与各凸起34e相关联的可以是等距离离开处于高度h1的顶表面34f和在凸起部分34a两侧的一对分开的肩部34b。或者,凸起134e可以包括围绕顶表面134f的单个肩部134b,如图16所示。
此外,参阅图17,各凸起234e可以包括与顶表面234f隔开的分别处于不同高度h1、h2、h3和h4的多个肩部234a、234b、234c和234d,实际上可以包括从0至n的任何数量,其中“n”是整数。为此,模子(未示出)将具有形成在它的一表面内的、将与凸起234e的形状互补的一个或多个凹槽。并且,肩部234a、234b、234c和234d可以位于顶表面234f的两侧,如图18所示。或者,肩部234a、234b、234c和234d可以同中心地设置在顶表面234f周围,如图19所示。使用凸起234e,可以将基底231形成为具有与凸起234e的形状互补的凹槽,如图20中的标号250所示。虽然基底231被示为由均质材料、例如硅形成,但是在基底231上可以包括材料的任何层数(未示出),并在上述诸层的一层或多层和/或基底231中可以形成凹槽250。并且,该诸层可以由适合于半导体加工的任何材料构成。
参阅图2和21,已相对于使用具有在其中形成的多个凹槽的模子27形成基体31上的凹槽讨论了上述内容。但是,可以使用上述相同的加工形成在基底331上的诸岛部335。为此,图22所示的模子237包括从表面328a延伸的一个或多个凸起328,各凸起328具有凸出部分328b和与凸出部分隔开的在表面328a和凸出部分328b之间的肩部328c。将一层压印材料设置在基底331上,并被扩展形成如以上讨论的有图案的层334。以这方式,有图案的层334包括与模子327上的图案互补的图案。在该例子中,这造成在有图案的层334内形成一个或多个凹槽334a。
参阅图22和23,因此在有图案的层334上设置蚀刻选择层340和冠表面340a以形成如以上所述形成的多层结构338。以这方式,在冠表面340a形成之后所留下的仅仅蚀刻选择层340的诸部分充填诸凹槽334a。将冠表面340a暴露于在不被凹槽334a重叠的有图案的层334的诸部分内是非常有选择性的氧等离子体蚀刻化学作用,该冠表面被去除,以露出基底331的诸区域344,如图24所示。部分地由于当暴露于使用如以上所讨论的主要由氧气构成的一化学作用的等离子体蚀刻时、蚀刻选择层340的其余部分中存在的硅所形成的硬化掩膜342,实现这了加工。
参阅图21和24,在露出诸区域344之后,使用例如以上所讨论的类型的氟基等离子体蚀刻,以去除如图23所示的多层结构338的与硬化掩膜342为重叠关系的诸区域,以露出诸区域345。尤其,在区域344和硬化掩膜342之间的蚀刻速率差异造成诸岛部335的形成。但是,应该理解按照如图22所示的模子327上的图案以这方式可以形成以上所述的任何有台阶的结构特征。并且,虽然基底331被示为由例如硅的均质材料形成,但是在基底331上可以包括材料的任何层数(未示出),并且在上述诸层的一层或多层和/或基底331中可以形成诸岛部335。而且,可以由适合于半导体加工的任何材料构成该诸层。
参阅图1和2,一示例性的辐射源22可以产生紫外线辐射。可以使用其它辐射源,例如热的、电磁的等。选择所使用的辐射以开始聚合在有图案的压印层34内的材料对于该领域的熟练人员是已知的,并通常取决于所需的特定应用情况。对辐射源22定位使有图案的模子27位于辐射源22和基底31之间。因此,可以由允许对辐射源22产生的辐射基本上能穿透的材料制造基底31和/或有图案的模子27。示例性的材料包括但不局限于熔融的硅石、石英、硅、有机聚合物、硅氧烷聚合物、硼硅酸盐玻璃、碳氟聚合物、金属和它们的组合物。
可能需要由热稳定的材料制造系统10的另件,例如这些材料在室温附近(例如摄氏25度)具有小于约百万分之一/1℃的热膨胀系数。在某些实施例中,结构材料可以具有小于约百万分之十/1℃或小于百万分之一/1℃的热膨胀系数。为此,桥支持件12、桥接件14和/或台支持件16可以由以下材料的一种和多种制成:碳化硅、商标为INVAR或SUPER INVARTM的铁合金、包括但不局限于ZERODUR陶瓷的陶瓷。此外,台架24可以被制成使系统10的其余零件与环境振动相隔离。一示例式台架24可从加利福尼亚州Irvine的Newport公司得到。
参阅图1、2和3,按照所采用的独特的沉积加工,材料36a的特性对于有效地使基底31形成图案是很重要的。如以上所述,材料36a被沉积在基底上成为多个单独的和分开的珠滴36。诸珠滴36的组合容积使材料36a适当地分布在表面32的将形成有图案的压印层34的区域。因此,有图案的压印层34被扩展和与通过暴露于辐射、例如紫外线辐射而随后建立的图案同时被形成图案。作为沉积加工的结果,希望材料36a具有便于在表面32上迅速和均匀地扩展在诸珠滴36中的材料36a的某些特性,以便全部厚度t1基本均匀和全部剩余厚度t2基本均匀。
参阅图3和25,使用材料36a中的上述成份便于压印平版印刷,在基底431上包括底层456。尤其,底层456的功能是提供与有图案的压印层434的标准的界面,从而减少需要对由其形成基底431的材料定制各加工。此外,可以由带有与有图案的压印层434为相同蚀刻特性的有机材料形成底层456。以使其具有连续的、光滑的较无瑕疵的表面的方式制造底层456,该表面可以呈现对有图案的压印层434极好的粘附性。
此外,为了保证有图案的压印层434不粘附于有图案的模子27,表面27a可以被处理成带有低表面能量复层458。从而,当有图案的模子27与基底431接触时,有图案的压印层434位于底层456和复层458之间。可以利用任何已知加工施加复层458。例如,加工技术可以包括化学汽相淀积法、物理汽相淀积、原子层淀积、钎焊或许多其它技术。可以按类似方式将低表面能量复层施加于如图6所示的模子127。或者,可以通过有由其制造有图案的压印层34或蚀刻选择层40的材料中包括具有低表面能量的称为表面活化剂的化合物改进有图案的压印层34或蚀刻选择层40的释放性能。利用已知材料使该化合物分别迁移到与如图2和6所示的模子27和/或127交界的层表面。通常,表面活化剂具有与其相关联的比该层中可聚合材料的表面能量较小的表面能量。在微电子工程第61-62页(2002)上“在紫外线为基础的诺米压印平版印刷中的多次压印”内Bender等人讨论了由其形成上述表面活化剂的示例性材料和加工。表面活化剂的低表面能量提供了降低压印层34或蚀刻选择层40分别对如图2和6所示的模子27和/或127的粘附的所需的释放性能。应该理解可以与图25所示的低表面能量复层458相结合或代替它使用表面活化剂。
以上所述的本发明的实施例是示例性的。对于以上所揭示的内容可以作出许多变化和修改,同时保持在本发明的范围内。因此,本发明的范围不应该参考以上叙述来确定,而是应该由所附权利要求书和诸等价物的它们的整个范围确定。
Claims (40)
1.在一基底上形成一有台阶的结构的一方法,所述方法包括:
在所述基底上形成具有一形状的多层排列结构;以及
将所述形状的一颠倒形状转移进入所述基底内。
2.如权利要求1所述的方法,其特征在于,转移还包括将所述形状的所述颠倒形状转移进入所述基底,用于形成一道路部分和一沟槽部分,同时所述道路部分的尺寸被确定为所述多层排列结构的一第一分部分的尺寸的函数,以及所述沟槽部分的尺寸被确定为所述多层排列结构的一第二分部分的尺寸的函数。
3.如权利要求1所述的方法,其特征在于,转移还包括用一蚀刻选择层覆盖所述多层排列结构,同时所述基底、所述蚀刻选择层和所述多层排列结构形成一多层结构,并去除所述多层结构的诸部分,以露出与所述多层排列结构的一第一分部分重叠的所述基底的诸区域,同时在所述蚀刻选择层的与所述多层排列结构的一第二分部分重叠的区域内形成一硬掩膜。
4.如权利要求1所述的方法,其特征在于,转移还包括用一蚀刻选择层覆盖多层排列结构,以及所述蚀刻选择层、所述基底、所述多层排列结构形成多层结构,并使所述多层结构受到蚀刻加工,该蚀刻加工从所述多层结构顺序地去除材料的第一和第二批量,同时材料的所述第一批量对应于所述多层排列结构的一第一分部分、与其重叠的所述蚀刻选择层的诸第一部分、以及与所述多层排列结构的第一分部分重叠的所述多层排列结构和所述基底的诸部分,材料的所述第二批量对应于诸所述肩部、与其重叠的所述蚀刻选择层的诸第二部分和与所述诸肩部重叠的所述多层排列结构和所述基底的所述诸第二部分。
5.如权利要求1所述的方法,其特征在于,形成还包括在所述基底上沉积一可聚合的流体合成物,以及使所述合成物与具有包括对所述多层排列结构的所述形状互补的一形状的一释放结构的一模子接触,并将所述合成物暴露于光化辐射,用于聚合所述合成物。
6.如权利要求1所述的方法,其特征在于,形成还包括由基本上无硅的一有机可聚合的材料形成所述多层排列结构,而覆盖还包括从一含硅的材料形成所述蚀刻选择层。
7.如权利要求1所述的方法,其特征在于,形成还包括由具有一可聚合的化合物的一材料和具有比所述可聚合的化合物的一表面能量较小的一表面能量的一表面活化剂形成所述多层排列结构。
8.如权利要求1所述的方法,其特征在于,覆盖还包括由具有一可聚合的化合物的一材料和具有比所述可聚合的化合物的一表面能量较少的一表面能量的一表面活化剂形成所述蚀刻选择层。
9.如权利要求1所述的方法,其特征在于,覆盖还包括通过在所述多层排列结构上沉积一可聚合的流体合成物、和使所述可聚合的流体合成物与具有一基本上光滑的表面一模子接触、以及使所述可聚合的流体合成物受到用于聚合所述可聚合的流体合成物的环境作用形成所述蚀刻选择层。
10.如权利要求1所述的方法,其特征在于,覆盖还包括通过在所述多层排列结构上旋转涂复一含硅材料沉积所述蚀刻选择层。
11.如权利要求1所述的方法,其特征在于,还包括在所述基底上形成位于所述基底和所述多层排列结构之间的一蚀刻停止层。
12.如权利要求1所述的方法,其特征在于,还包括在所述道路部分和所述沟槽部分中沉积一导电材料。
13.如权利要求1所述的方法,其特征在于,所述多层排列结构包括一有台阶的凹槽。
14.如权利要求13所述的方法,其特征在于,还包括由一晶片和一薄膜层形成所述基底,其中转移还包括将所述形状的所述颠倒形状转移进入所述薄膜层。
15.如权利要求13所述的方法,其特征在于,还包括由所述晶片和所述薄膜层形成所述基底,其中转移还包括将所述形状的所述颠倒形状转移进入所述晶片。
16.如权利要求1所述的方法,其特征在于,所述多层排列结构包括一双高度凸起,该双高度凸起包括一凸示出部分和诸肩部,同时所述凸出部分具有一顶表面和所述诸肩部与所述顶表面和所述基底隔开。
17.如权利要求16所述的方法,其特征在于,还包括由所述晶片和所述薄膜层形成所述基底,其中转移还包括将所述形状的所述颠倒形状转移进入所述薄膜层。
18.如权利要求16所述的方法,其特征在于,还包括由所述晶片和所述薄膜层形成所述基底,其中转移还包括将所述形状的所述颠倒形状转移进入所述晶片。
19.在一基底上形成一有台阶的结构的一方法,所述方法包括:
在所述基底上形成一多层排列结构;
用一蚀刻选择层覆盖所述多层排列结构,同时所述基底、所述蚀刻选择层和所述多层排列结构形成一多层结构;
使要被蚀刻的所述基底的诸区域限定为通过去除所述蚀刻选择层被暴露的多层排列结构的诸部分的函数。
20.如权利要求19所述的方法,其特征在于,形成还包括形成带有一凸出部分和诸肩部的所述多层排列结构,限定所述诸区域还包括同时去除所述多层排列结构的诸部分,以在与一凸出部分重叠的所述基底的一区域中形成一道路部分,同时通过将所述多层排列结构暴露于一等离子体蚀刻在与所述诸肩部重叠的所述蚀刻选择层的诸区域中形成一硬掩膜。
21.如权利要求19所述的方法,其特征在于,形成还包括在所述基底上沉积一可聚合的流体合成物,以及使所述合成物与具有包括对所述多层排列结构的所述形状互补的一形状的一释放结构的一模子接触,并将所述合成物暴露于光化辐射,用于聚合所述合成物。
22.如权利要求19所述的方法,其特征在于,形成还包括由基本上无硅的一有机可聚合的材料形成所述多层排列结构,而覆盖还包括从一含硅的材料形成所述蚀刻选择层。
23.如权利要求21所述的方法,其特征在于,覆盖还包括通过在所述多层排列结构上沉积一可聚合的流体合成物、和使所述可聚合的流体合成物与具有一基本上光滑的表面一模子接触、以及使所述可聚合的流体合成物受到用于聚合所述可聚合的流体合成物的环境作用形成所述蚀刻选择层。
24.如权利要求21所述的方法,其特征在于,覆盖还包括通过在所述多层排列结构上旋转涂复一含硅材料沉积所述蚀刻选择层。
25.如权利要求21所述的方法,其特征在于,形成还包括由具有一可聚合的化合物的一材料和具有比所述可聚合的化合物的一表面能量较小的一表面能量的一表面活化剂形成所述多层排列结构。
26.如权利要求21所述的方法,其特征在于,覆盖还包括由具有一可聚合的化合物的一材料和具有比所述可聚合的化合物的一表面能量较少的一表面能量的一表面活化剂形成所述蚀刻选择层。
27.如权利要求19所述的方法,其特征在于,所述多层排列结构包括具有一形状的一有台阶的凹槽。
28.如权利要求27所述的方法,其特征在于,还包括由一晶片和一薄膜层形成所述基底,并将所述形状的一颠倒形状转移进入所述薄膜层。
29.如权利要求27所述的方法,其特征在于,还包括由所述晶片和所述薄膜层形成所述基底,其中转移还包括将所述形状的所述颠倒形状转移进入所述晶片。
30.如权利要求19所述的方法,其特征在于,所述多层排列结构包括一双高度凸起,该双高度凸起包括一凸出部分和诸肩部,同时所述凸出部分具有一顶表面和所述诸肩部与所述顶表面和所述基底隔开,所述双高度凸起形成一形状。
31.如权利要求30所述的方法,其特征在于,还包括由所述晶片和所述薄膜层形成所述基底,其中转移还包括将所述形状的所述颠倒形状转移进入所述薄膜层。
32.如权利要求31所述的方法,其特征在于,还包括由所述晶片和所述薄膜层形成所述基底,其中转移还包括将所述形状的所述颠倒形状转移进入所述晶片。
33.在一基底上形成一有台阶的结构的一方法,所述方法包括:
在所述基底上形成具有包括一凸出部分和诸肩部的双高度凸起的一有图案层,所述凸出部分具有一顶表面,同时所述诸肩部与所述顶表面和所述基底隔开;
用一蚀刻选择层覆盖所述凸出部分;
通过去除所述蚀刻选择层的一部分以露出所述顶表面产生一冠表面,同时所述双高度凸起的诸其余部分被所述蚀刻选择层覆盖;
去除所述顶表面和与所述顶表面重叠的所述有图案层的材料,同时避免暴露所述双高度凸起的诸其余部分;
去除与所述双高度凸起的所述诸其余部分重叠的所述蚀刻选择层的诸区域,以露出所述诸肩部;以及
去除所述诸肩部和与其重叠的所述有图案层。
34.如权利要求33所述的方法,其特征在于,形成还包括在所述基底上沉积一可聚合的流体合成物,以及使所述合成物与具有包括对所述双高度凸起的一形状互补的一形状的一释放结构的一模子接触,并将所述合成物暴露于光化辐射,用于聚合所述合成物。
35.如权利要求33所述的方法,其特征在于,形成还包括由基本上无硅的一有机可聚合的材料形成所述有图案层,覆盖还包括从一含硅的材料形成所述蚀刻选择层。
36.如权利要求35所述的方法,其特征在于,去除所述顶表面还包括使所述冠表面受到一蚀刻化学作用,该蚀刻化学作用与由其形成的双高度凸起的材料是高度易起反应的,并在包括由其形成的所述蚀刻选择层的材料的所述冠表面的区域内形成一硬掩膜。
37.如权利要求35所述的方法,其特征在于,覆盖还包括通过在所述有图案层上沉积一可聚合的流体合成物、和使所述可聚合的流体合成物与具有一基本上光滑的表面一模子接触、以及使所述可聚合的流体合成物受到用于聚合所述可聚合的流体合成物的环境作用形成所述蚀刻选择层。
38.如权利要求35所述的方法,其特征在于,覆盖还包括通过在所述有图案层上旋转涂复一含硅材料沉积所述蚀刻选择层。
39.如权利要求35所述的方法,其特征在于,形成还包括由具有一可聚合的化合物的一材料和具有比所述可聚合的化合物的一表面能量较小的一表面能量的一表面活化剂形成所述有图案层。
40.如权利要求35所述的方法,其特征在于,覆盖还包括由具有一可聚合的化合物的一材料和具有比所述可聚合的化合物的一表面能量较少的一表面能量的一表面活化剂形成所述蚀刻选择层。
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CNA2004800139131A Pending CN1791967A (zh) | 2003-04-25 | 2004-04-21 | 使用压印平板印刷术形成有台阶的结构的方法 |
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CN107251192A (zh) * | 2015-02-27 | 2017-10-13 | 佳能株式会社 | 图案化方法,加工基板的生产方法,光学组件的生产方法,电路板的生产方法和电子元件的生产方法 |
CN107445477A (zh) * | 2016-05-23 | 2017-12-08 | 陈玉彬 | 节能玻璃及其制造方法 |
CN107445477B (zh) * | 2016-05-23 | 2019-12-03 | 陈玉彬 | 节能玻璃的制造方法 |
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WO2004097518A2 (en) | 2004-11-11 |
MY139450A (en) | 2009-10-30 |
US20040211754A1 (en) | 2004-10-28 |
JP2006524919A (ja) | 2006-11-02 |
WO2004097518A3 (en) | 2005-07-21 |
KR20060004679A (ko) | 2006-01-12 |
US7396475B2 (en) | 2008-07-08 |
EP1618602A2 (en) | 2006-01-25 |
TW200502157A (en) | 2005-01-16 |
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