CN1813362A - 在基底上形成填充介电材料的图案的方法 - Google Patents
在基底上形成填充介电材料的图案的方法 Download PDFInfo
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- CN1813362A CN1813362A CNA2004800179069A CN200480017906A CN1813362A CN 1813362 A CN1813362 A CN 1813362A CN A2004800179069 A CNA2004800179069 A CN A2004800179069A CN 200480017906 A CN200480017906 A CN 200480017906A CN 1813362 A CN1813362 A CN 1813362A
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Abstract
公开了通过热转移工艺在基底上形成填充介电材料图案的方法,包括将包含基底和介电材料转移层的热成像供体元件向热暴露。曝光图案是要在基底上形成的所需图案的像,这样将部分介电材料层转移到基底上,在此形成电子器件。可以将填充的介电材料图案化到薄膜晶体管的栅极上。图案介电材料还可以形成互连件的绝缘层。还公开了在该方法中使用的供体元件。还公开了用于热转移工艺中的薄膜晶体管和供体元件的形成方法。
Description
发明领域
本发明涉及通过热转移工艺在基底上形成介电材料图案的方法。本发明还涉及可用来生产有机薄膜晶体管的供体元件(donerelement)。
发明背景
全部或部分由有机材料制成的晶体管比传统晶体管更便宜且更易于生产,可用于使用传统晶体管不合算且不要求高密度的应用之中。例如,有机晶体管可用于电子纸张、海报和书籍、智能卡、玩具、电器和用于产品识别的电子条形码。有机晶体管还可以由挠性材料制成,此类晶体管可以用来控制电脑、笔记本电脑和电视的挠性平板显示器中的二极管。
TFT器件的性能一般通过测定其“接通”电流(Isd)的行为来表征,所述电流是在源/漏极电压高于栅极电压的条件下测量的。这里的电流称作饱和电流,与源/漏极电压无关,可以与方程1器件的其它特征有关:
Isd=W/2L Cμ(Vg-VT)2 (方程1)
其中μ是半导体的有效迁移率,C是栅极电介质的电容,正比于介电层的介电常数ε。Vg是栅极电压,VT是阈值电压。具有大“接通”电流的晶体管具有大μ值、高ε和高C的某种组合。TFT输出电流与电容线性相关,正比于介电层的介电常数并反比例于其厚度。在低电压下驱动的该晶体管需要极薄的无针孔电介质,或者,作为替换物,具有高介电常数的较厚的电介质。
为用于TFT,介电层必须相当薄(~1微米),具有适宜的ε并基本无针孔。至少,该电介质必须将栅极与极源和漏极完全绝缘开。需要以成本有效的方式生产这种具有高分辨率特征的介电层的方法。
发明概述
本发明提供了新式的热转移工艺,其包括:
a、形成供体元件,其包含透明的、片状形式的尺寸稳定基底和转移层;其中的转移层包含高介电常数纳米颗粒和分散剂或聚合物基体;
b、将供体元件转移层与受体元件(receiver element)接触放置;和
c、加热供体元件的选择区域以实施转移层向受体元件的部分转移,形成多层结构。
本发明还提供了新型供体元件,其包含:
a、透明的、尺寸稳定的片状基底;和
b、转移层,其包含高介电常数的纳米颗粒和分散剂或聚合物基体。
附图简述
图1显示了本发明一个实施方案用来转移介电材料的供体元件和受体元件。
图2显示了图1供体元件和受体元件组装的曝光。
图3显示了涂覆了BaTiO3分散体的薄膜介电响应实部的频率依赖性。
图4显示了涂覆在由BaTiO3分散体以颜料/分散剂为1.5的比率制成的介电层上的热成像源极和漏极阵列的显微图像。
图5显示了采用PD-1.5电介质和通道宽度1500微米且通道长度500微米的器件的典型IV曲线。
图6显示了采用PD-2.0电介质和通道宽度1500微米且通道长度500微米的器件的典型曲线。
图7显示了用PD-1.5电介质制成的倒相晶体管的显微图片。
图8显示了用PD-2.0电介质制成的倒相器的显微图片。左侧一个显示了栅极、电介质和源/漏极区,右侧一个显示了电介质边缘和栅极互连件。
图9显示了由PD-2.0电介质制成的倒相晶体管的IV曲线。
发明详述
本发明提供了新式的热转移工艺,其包括:
a、形成供体元件,其包含透明的、片状形式的尺寸稳定基底和转移层;其中的转移层包含高介电常数纳米颗粒和分散剂或聚合物基体;
b、将供体元件转移层与受体元件接触放置;和
c、加热供体元件的选择区域以实施转移层向受体元件的部分转移,形成多层结构。
在本发明中,公开了用于在基底上形成介电材料图案的新型热转移工艺,所述介电材料如高介电常数纳米颗粒的分散体或聚合物复合材料。当将电介质向图案化的导电材料上形成图案时,可以将其用于电子器件,包括有机电子器件。例如,可以形成可用于有机晶体管中的介电层。
可以通过几种方式中的任意一种来加热以实现供体元件的转移,包括直接或间接加热,或激光诱导加热。热转移工艺一般使用供体元件,包括待转移材料层(转移层)和受体元件,包括接受转移材料的表面。对于激光诱导热工艺,供体元件的基底或受体元件是透明的或二者都是透明的。使供体元件和受体元件相互靠近或接触并选择性地加热或向激光辐射-一般指来自红外激光的辐射曝光。
在激光工艺中,在转移层的曝光部分产生热,造成转移层的这些曝光部分向受体元件表面上转移。如果转移层材料不吸收到来的激光辐射,则供体元件必须包括与转移层比邻的加热层。
可挥发的聚合物材料脱模层(ejection layer)在加热时分解为气态分子,也可以将其提供在加热层和供体支持体之间。脱模层的分解提供出额外的力,将转移层的曝光部分向受体元件推进。
在激光诱导数字热转移工艺的一个实施方案中,曝光每次仅发生在组装上经选择的小区域内,这样,从供体元件到受体元件的材料转移一次可积累一个像素。计算机控制便利了高分辨率、高速的转移。作为替换方案,可以照射整个组装,采用掩模来选择性地将热成像层上需要的部分曝光。
本发明的方法可用于薄膜晶体管的生产。例如,在已经通过热转移或其它方法在基体上印刷的源极和漏极上,可以采用传统方法沉积有机半导体材料的图案。通过本发明的方法,介电材料图案可以转移到有机半导体材料上形成绝缘层。有机半导体材料的图案优选通过诸如经阴影掩模蒸镀、喷墨等方法来提供。在绝缘材料上沉积导电材料图案形成栅极。
作为替换方案,可以在经由热转移印刷介电材料前通过常规方法将栅极施用到基底上。通过常规方法可以将源极、漏极和互连件施用到有机介电材料上,接下来是半导体,形成晶体管。作为替换方案,在源极和漏极形成前,可以在介电材料上提供一层有机半导体材料。
本发明的成像工艺也可以用来使多层图案化。例如,供体上的转移层可以包含与基底相邻的第一层导体材料以形成栅极。可以在导体材料层上沉积一层介电材料并经由热工艺与导电材料一起进行转移。然后,将导电的源极和漏极经热成像沉积在介电材料上。最后,通过其它常规方法添加半导体层来完成晶体管。
本发明还提供了供体元件,其包含用于有机电子器件中的基底和在基底上的介电材料转移层,其中的介电材料包含高介电常数纳米颗粒和分散剂或聚合物基体。该供体元件可以用于本发明的方法中,在受体元件上形成图案化的介电层。作为替换方案,可以将该层介电材料上的不需要部分从供体元件上除去,在供体上形成所需的介电材料图案。然后将图案化的电介质层合到受体元件上,例如层合到栅极层上。
供体元件和受体元件
图1显示了用于本发明工艺的示范性供体元件(10)和受体元件(20)。
供体元件(10)包含基底(14);包含介电材料层(18)的转移层(12);和在基底(14)和转移层(12)之间的任选加热层(16)。基底(14)为任选的加热层(16)和转移层(12)提供了支持作用。供体元件(10)还可以包含脱模层(15)。脱模层(15)位于基底(14)和任选加热层(16)之间。受体元件(20)包含受体支持体(22)和任选的粘合剂层(24)。
受体元件(20)一般与供体元件(10)的转移层(12)相邻,在本发明方法的转移步骤中接受介电有机材料(12)的曝光部分。
基底(14)和受体支持体(22)是尺寸稳定的片状材料。在本发明的一个实施方案中,基底(14)和受体支持体(22)是挠性的,以有利于随后的工艺步骤。为用于激光诱导的热转移工艺,基底(14)还必须能够透射激光辐射,使转移层(12)曝光。
适用作基底(14)的透明、挠性薄膜包括例如聚酯(例如聚对苯二甲酸乙二酯)、聚醚砜、聚酰亚胺、乙烯醇-乙缩醛共聚物、聚乙烯、纤维素酯如醋酸纤维素酯和聚氯乙烯。在本发明的一个实施方案中,供体元件(10)的基底(14)是经等离子体处理以接受任选加热层(16)的聚对苯二甲酸乙二酯。相同的材料可以用于受体支持体(22)。受体元件(20)也可以是不透明的材料如填充了白色颜料如二氧化钛的聚对苯二甲酸乙二酯、象牙纸或合成纸如Tyvek纺粘聚烯烃。
介电层优选为约1-2微米厚并可以按本发明的方法进行转移。也可以采用较厚的层。虽然有机电子元件中的介电层一般约1000-2000埃,但本文描述的颗粒复合介电材料具有较高的介电常数,因而,在所述器件中,无需更高的电压就可以印刷较厚的电介质。
还可以通过多种方法中的任何方法来在支持体上施加介电层,例如旋涂、流延或印刷。
介电层包含高介电常数纳米颗粒和分散剂或聚合物基体。适合的高介电常数纳米颗粒包括介电常数大于10的材料,优选大于100,更优选大于1000。这样的材料包括多种钛酸盐、铌酸盐、硫化物、碲化物、钽酸盐、锆酸盐、铪酸盐和金属氧化物。具体实例包括BaTiO3(钛酸钡)、KTaNbO3(铌酸钽钾)、KSr2Nb5O15(铌酸锶钾)、Pb3MgNb2O9(铌酸镁铅)、SbSI(碘硫化锑)、SnTe(碲化锡)、SrTiO3(钛酸锶)、MnO2(二氧化锰)、CaCu3Ti4O12(钛酸铜钙)、BaTi2Nb8O30(铌酸钛钡)、Cd2Nb2O2(焦铌酸镉)、KIO3(碘酸钾)、KNbO3(铌酸钾)、KTaO3(钽酸钾)、PbHfO3(铪酸铅)、PbNb2O6(铌酸铅)、PbS(硫化铅)、PbSe(硒化铅)、PbTa2O6(偏钽酸铅)、PbTe(碲化铅)、PbTiO3(钛酸铅)、PbZrO3(锆酸铅)、RbNO3(硝酸铷)、Sb2Se3(硒化锑)、SnSb(硒化锡)、TiO2(二氧化钛)、Al2O3(氧化铝)和WO3(三氧化钨)。这些材料中的一些可以直接制备为适当的纳米尺寸;其它的可以经过研磨、磨碎或磨削至所需尺寸(通常小于100nm)。
可以通过在适当的分散助剂帮助下将纳米颗粒分散在溶剂中,然后将分散体涂覆在供体支持体上并将溶剂蒸发掉来形成介电层。适当的分散体助剂通常是用于金属氧化物颜料和矿物中的那些。或者,可以将纳米颗粒分散到包含晶格和低分子量聚合物的聚合物基体中,包括聚醚,聚醇、聚胺、聚酰胺和聚酯。可以将分散助剂与纳米颗粒一起使用以改进聚合物基体中的均匀混合。可以通过几种方式中的任何一种,包括涂布、流延和层合,由纳米颗粒/聚合物混合物在供体支持体上形成介电层。
供体元件(10)的加热层(16)的功能是吸收用来使转移层(12)的介电有机材料曝光的激光辐射(R)并将辐射转化为热量。加热层一般是金属,例如,Sc、Y、Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Ag、Fe、Ru、Os、Co、Rh、Ir、Ni、Pd、Pt、Ga、In、Tl、Sb、和Bi,它们彼此的合金和它们与Li、Na、K、Rb、Cs、Be、Mg、Ca、Sr、Ba或Ra的合金。其它适用于加热层的材料包括碳,一种非金属元素。优选电子束沉积的镍。已经发现,当将镍层用氧气等离子体处理过时,有利于层合步骤中转移层的释放。
或者,任选的加热层可以是包含有机粘合剂和红外吸收剂的有机物层。适当的粘合剂的实例是在相当低的温度下加热时分解的那些,如聚氯乙烯、氯化聚氯乙烯和硝化纤维素。适用的近红外吸收剂包括炭黑和红外染料。适用的红外吸收染料包括TIC-5c(2-[2-[2-氯-3[[1,3-二氢-1,3,3-三甲基-2H-吲哚-2-二价基)亚乙基]-1-环戊烯-1-基]乙烯基]-1,3,3-三甲基-3-H-吲哚鎓(indolium),其与三氟甲磺酸(1∶1)的盐,CAS#128433-68-1),得自E.I.DuPont de Nemours,Inc(Wilmington,DE)。在830nm吸收的替换染料包括:ADS830(2-[2-[2-氯-3-[2-[1,3-二氢-1,1-二甲基-3-(4-硫丁基)-2H-苯并吲哚-2-二价基]亚乙基]-1-环己烯-1-基]乙烯基]-1,1-二甲基-3-(4-硫丁基)-1H-苯并吲哚鎓,内盐、游离酸,CAS#162411-28-1);和SQS((4-[[3-[[2,6-双(1,1-二甲基乙基)-4H-噻喃-4-二价基]甲基]-2-羟基-4-氧代-2-环丁烯-1-二价基]甲基]2,6-双(1,1-二甲基乙基)硫代吡喃鎓(thiopyrylium),氢氧化物、内盐,CAS#88878-49-3,也得自E.I.DuPont de Nemours,Inc.(Wilmington,DE)。如果采用的激光器发射出其它的波段,那么应选择吸收特定波段辐射的染料。
加热层的厚度取决于所用金属的光吸收作用。对铬、镍/钒合金或镍而言,优选80-100埃的层。40-50埃的铝加热层显示出高光学吸收作用。如果采用碳,加热层应为约500-约1000埃厚。
虽然优选单加热层,但也可能具有一个以上的加热层,而且不同的层可以具有相同或不同的组成。
可以通过物理气相沉积技术将加热层(16)向基底(14)施用。可以将镍用电子束沉积在基底(14)上。可以通过电阻加热来施用铝。可以通过溅射或电子束沉积来施用铬、镍和镍/钒合金层。
任选的脱模层(15)包含具有低分解温度,例如低于约275℃的材料。适用于脱模层的材料包括硝化纤维素、聚氯乙烯、氯化聚氯乙烯、聚甲基丙烯酸甲酯和聚甲基丙烯酸酯共聚物。脱模层优选约1微米厚。
如果使供体层向负像曝光并随后经层合将曝光供体上的电介质向受体基底转移,则介电层与加热层(16)的粘着作用小于介电层(18)向受体基底的粘着作用,这一点是重要的。因此,释放方式优选提供在加热层(16)和介电层(12)之间。或者,可以通过用氧等离子体处理加热层(16)来提供释放方式。已经发现,至少约45秒,优选约90秒的氧等离子体处理有助于通过层合将所需的介电层图案向所述基底转移,而不会破坏介电材料。也可以在毗邻介电材料层的加热层(16)表面上形成氧化物层。该氧化物层一般具有几个单层的厚度。单层厚度的附加脱模层也可以直接涂覆到加热层表面上,如通过棒式涂覆。
在脱模层(15)中还可以包含发气剂(gas former)以增加脱模层中产生的推力。适当的发气剂包括重氮烷基化合物、重氮盐和叠氮基(-N3)化合物;铵盐;可分解形成氧气的氧化物;碳酸盐和过氧化物。也可以使用重氮化合物如4-重氮基-N,N’-二乙基苯胺氟硼酸盐以及发气剂的混合物。
受体元件(20)的粘合剂层(24)可以是聚碳酸酯、聚氨酯、聚酯、聚氯乙烯、苯乙烯/丙烯腈共聚物、聚(己内酯)、醋酸乙烯酯与乙烯和/或氯乙烯的共聚物、(甲基)丙烯酸酯的均聚物(如甲基丙烯酸丁酯)、共聚物及其混合物。也可以使用压敏粘结剂。
可以采用真空和/或压力使供体元件(10)和受体元件(20)保持在一起以形成组装(30)。作为一个替换方案,可以通过组装(30)周边的层间熔合使供体元件(10)和受体元件(20)保持在一起。作为另一个替换方案,可以将供体元件(10)和受体元件(20)用胶带粘接在一起并用胶带向成像设备粘接。也可以采用针销/卡紧系统。作为再一个替换方案,可以将供体元件向受体元件进行层合。
如果供体元件(10)和受体元件(20)是挠性的,可以将组装(30)方便地加载在鼓上以便于激光成像。使组装(30)以需要在基底上形成图案的成像曝光图案选择性地向热暴露,该热优选是激光照射(R)的形式。(参见图2)。激光照射或激光束(R)聚焦在(16)和(15)之间的界面部分,如果存在的话,否则,将其聚焦在(16)和(12)之间。转移层(12)的曝光部分加热了释放和加热层(15和16)的相邻部分,造成了界面的分解和挥发,将转移层(12)的曝光部分从转移层上推开。由此,介电材料转移层(12)的所需部分向受体元件(20)转移。
如图2中所示,照射优选经由基底(14)施用。以高达约600mJ/cm2,优选约75-440mJ/cm2的激光积分通量提供激光照射。可以采用各种类型的激光器使金属加热层(16)曝光。激光器优选在红外、近红外或可见光区域发射。在750-870nm区域发射的二极管激光器是特别有利的,其提供了尺寸小、成本低、稳定性、可靠性、坚固耐用和易于调制的实质性优点。最优选在780-850nm区域内发射的二极管激光器。这样的激光器可以得自例如Spectra Diode Laboratories(San Jose,CA)。也可以采用在其它波段发射的其它类型的激光和激光器。
采用本发明的方法,在30英寸×40英寸的基底上,可以同时生产至少约20,000个晶体管。典型地,每个晶体管为约100微米×100微米并与相邻的晶体管分隔开约100微米。
如本文中使用的,术语“有机电子器件”指的是这样的电子器件,其中的任何部件如半导体、导体和介电部件都是有机材料的。
同样是用于本文中的短语“与...相邻”不是必定指一层与另一层紧邻。在所述彼此相邻的层间可以提供一或多个中间层。
术语“物理气相沉积”指的是真空中进行的各种沉积工艺。因而,例如,物理气相沉积包括全部形式的溅射,包括射频磁控管溅射和离子束溅射,以及所有形式的气相沉积,如电子束蒸镀和化学气相沉积。
实施例
非限制性实施例验证了本文所要求权利保护和描述的填充介电材料的层的转移方法。
实施例1
颜料分散体
由Cabot BaTiO3纳米颗粒(Cabot Corporation,Boston,MA)和DR-3(一种具有69%的丙烯酸酯骨架和31%甲基丙烯酸酯支链的接枝共聚物)制备了BaTiO3颜料分散体。骨架的具体结构为丙烯酸正丁酯/丙烯酸甲酯/丙烯酸(45/45/9),支链结构为甲基丙烯酸甲酯/甲基丙烯酸(71.25/28.75),描述于WO9421701A1中。如US.5,231,131中所描述,以25%的固体量,制备了颜料-分散剂比率(P/D)为2.0颜料分散体。与58.36克BaTiO3一起,将236.16克水、48.56克分散剂溶液和6.92克2-氨基-2-甲基-1-丙醇的混合物加入磨碎器(APolloTrickTitanium,Troy,MI)中。磨碎器中含有850克0.8-1.0微米的氧化锆介质。将混合物加工12小时,温度保持在38℃以下。经由1微米的过滤器过滤生成颜料分散体。
采用表2中所示的颜料分散比率按与PC-2相同的方式制备了分散体PD-1.5、PD-4和PD-8。
表2颜料分散体的组成
颜料分散体 | 颜料 | P/D |
PD-2PD-8PD-4PD-1.5 | BaTiO3BaTiO3BaTiO3BaTiO3 | 2.08.04.01.5 |
实施例2
采用惠普阻抗分析仪以标准构型测量介电功能。在1000RPM下将实施例1中描述的分散体旋涂到ITO玻璃上。薄膜干燥后,将铝电极蒸镀到薄膜的中央区域以进行介电测量。
PD-1.5、2、4和8的零频率介电常数分别为约8、12、21和22。
按说明涂覆的分散体PD-1.5、2、4和8的薄膜在0-106赫兹频率范围的介电响应实部的频率依赖性示于图3中。
实施例3
以下的实施例描述了薄膜晶体管的晶体管特征,所述晶体管包含作为FET(场效晶体管)的电介质/绝缘层的填充电介质层。该器件包含常规栅极、介电层、印刷的PANI/SWNT源极和漏极以及经阴影掩模在顶部上蒸镀的半导体层。(“PANI/SWNT’s”指的是聚苯胺(PANI)和单壁纳米管(Hipco SWNT,CNI Inc.,Houston,Texas)的复合材料)。将具有20Ω/square电阻率的ITO栅极(Courtaulds,Los Angeles,CA)溅射到具有400D光学透明度,得自E.I.Dupont deNemours,Inc.,Wilmington,DE的10密耳厚Mylar(0.254mm)上。然后用一层1.5微米厚的PD-1.5或PD-2采用Meyer棒10涂覆尺寸为8”×11”的经ITO涂覆的Mylar。将薄膜在空气中干燥过夜。然后,从供体薄膜经热转移印刷PANI源极和漏极。(PANI供体元件由4密耳(0.0363mm)厚的400D光学透明度Mylar基底元件、经电子束沉积涂覆至约40%透光度的100厚的镍层和在镍层顶部用以下配方涂覆的1.5微米厚的PANI层组成。)
将PD-1.5涂覆的ITO作为受体加载到得自Creo-Scitex,In.,Vancouver,Canada的CREO 3244 Spectrum Trendsetter Exposure Unit上。该设备上的磁鼓为81.2cm长、周长91cm。该设备的激光器为20瓦红外二极管激光器,其以1微秒脉冲宽度在830nm处发射出激光束。该激光束被光阀分割成相互重叠的2405×2微米的点阵。激光积分通量从3-11瓦变化,磁鼓速度保持在100RPM。激光束聚焦在镍/电介质界面上。该界面随曝光分解,气态分解产物将PANI层的曝光部分推到ITO/Mylar/电介质受体元件的填充电介质层上。PANI层的粘着作用足以将其粘着在受体元件的介电层上。曝光图案是介电层上PANI源极和漏极所需排列的正像。
具有以下尺寸的热成像源极漏极线阵列显微图片示于图4中。
底部线:通道宽度=2.5mm;长度=500微米
中部线:通道宽度=1.25mm;长度=250微米
顶部线:通道宽度=0.625mm;长度=125微米
在聚苯胺电极印刷后,移去受体并放入真空室中进行并五苯蒸镀。将样品用阴影掩模,这样在通道的每一侧并五苯伸长出2-3mm。系统Kurt Lesker蒸发器包含具有机械和低温泵的高真空室。将样品放在样品架中并在沉积过程中旋转以确保厚度均匀。沉积过程中该室的压力为4×10-8托。将并五苯(Sigma-Aldrich,Milwaukee,WI)放在确保温度均匀的加热元件包围的瓷舟中。坩埚中的温度控制在0.5℃范围内。随着达到所需的坩埚温度,位于样品和坩埚间的活门被打开。蒸镀速度为0.3/S,最终温度为207.1℃,五并苯样品厚度为125。当样品冷却至室温后,将其从真空室移开并测量晶体管的电流-电压特性。图5中显示了具有PD-1.5电介质且通道宽度和长度分别为1500和500微米的器件的典型IV曲线。器件的迁移率经计算为0.12cm2/V-s,晶体管的开启/关闭比率为6000。
还测量了涂有PD-2电介质的器件的IV特性。步骤和前述PD-1.5的相同。图6示出了具有PD-2电介质且通道宽度和长度分别为1500和500微米的器件的典型IV曲线。经计算,器件的迁移率为0.08cm2/Vs,晶体管的开启/关闭比为1000。
实施例4
该实施例说明了印刷包含分散的BaTiO3的介电层的方法。本实施例中的导体层用作经由热成像构建塑料晶体管中的栅极、源极和漏极。用光阀将激光束分割成相互重叠的2405*2微米的点阵列。栅极和源/漏极层曝光的激光积分通量为3.45瓦,磁鼓转速为100RPM。
采用供体薄膜制造栅极和源/漏极层,供体薄膜包含经电子束沉积直接在400D的Mylar上涂覆的约40%透光率的一层100的镍。用下述溶液涂覆的转移层用棒涂至1.2微米厚。
通过将0.075克Hipco碳纳米管(CNI,Houston,Texas)和19.1425克二甲苯加入2盎司的容器中制备了PANI转移层溶液。然后,超声处理混合物20分钟,同时保持浆料中的良好涡流。然后加入DNNSA-PANI(二壬基萘磺酸聚苯胺)19.1425克(在二甲苯中41.4%的溶液)并将得到的混合物进一步超声处理5分钟。用二甲苯将得到的约10%固体量的浆料稀释到6%固体量,然后采用Meyer棒#10涂覆成1微米的薄膜。该薄膜含有3%的SWNT(单壁纳米管)和97%的聚苯胺。受体包含5微米Elvax薄膜挤出到400D Mylar(E.I.Du Pont deNemours,Inc.)上。将PANI供体层加载到防护盒上,将反相器栅极的像转移到受体上。按以下方式形成栅极层的像:将激光束聚焦到金属界面上。产生的热量使相邻界面中的有机物开始分解,这导致了PANI向受体上的转移。曝光结束后,受体上的像包含PANI/SWNT栅极层。第二供体层由400D的Mylar基底、80的电子束沉积Ni和1微米的采用Meyer棒#10涂覆的PD-1.5层。加载第二供体并使填充的电介质(PD-1.5)转移到栅极层上。该层完成后,将附加的相同图案的介电层转移到第一供体上。电介质成像结束后,将PANI/SWNT供体加载到所述设备上,在顶部并按记录显影源/漏极层。然后除去受体并将并五苯蒸镀到倒相晶体管上。如图7中的显微图片所示,通过热成像转移导体转移层能够精确控制线宽度和通道宽度。左侧的五个晶体管和右侧的一个晶体管的通道长度为30微米。
一个具有印制栅极W=4000μm,L=40μm的P/D1.5晶体管的数据。测得的迁移率m为0.02cm2/Vs,开启/关闭比率为~15000。
按上述采用PD-2印制了第二个倒相器。详细图象示于图8中。IV特性示于图9中。
上述晶体管的宽度和长度数据为W=4000μm,L=40μm。测得的迁移率为0.002cm2/Vs,开启/关闭比率为~2000。
Claims (23)
1.一种方法,包括:
a、形成供体元件,其包含透明的、片状形式的尺寸稳定基底和转移层;其中的转移层包含高介电常数纳米颗粒和分散剂或聚合物基体;
b、将供体元件转移层与受体元件接触放置;和
c、加热供体元件的选择区域以实施转移层向受体元件的部分转移,形成多层结构。
2.权利要求1的方法,其中的高介电纳米颗粒包含选自以下的材料:BaTiO3(钛酸钡)、KTaNbO3(铌酸钽钾)、KSr2Nb5O15(铌酸锶钾)、Pb3MgNb2O9(铌酸镁铅)、SbSI(碘硫化锑)、SnTe(碲化锡)、SrTiO3(钛酸锶)、MnO2(二氧化锰)、CaCu3Ti4O12(钛酸铜钙)、BaTi2Nb8O30(铌酸钛钡)、Cd2Nb2O2(焦铌酸镉)、KIO3(碘酸钾)、KNbO3(铌酸钾)、KTaO3(钽酸钾)、PbHfO3(铪酸铅)、PbNb2O6(铌酸铅)、PbS(硫化铅)、PbSe(硒化铅)、PbTa2O6(偏钽酸铅)、PbTe(碲化铅)、PbTiO3(钛酸铅)、PbZrO3(锆酸铅)、RbNO3(硝酸铷)、Sb2Se3(硒化锑)、SnSb(硒化锡)、TiO2(二氧化钛)、Al2O3(氧化铝)和WO3(三氧化钨)。
3.权利要求1的方法,其中的分散剂包含接枝共聚物。
4.权利要求1的方法,其中尺寸稳定的供体元件基底包含选自聚酯、聚醚砜、聚酰亚胺、乙烯醇-乙缩醛共聚物、聚乙烯、纤维素酯和聚氯乙烯的聚合物。
5.权利要求1的方法,其中的受体元件包含尺寸稳定的片状基底,其中的受体基底包含选自聚酯、聚醚砜、聚酰亚胺、乙烯醇-乙缩醛共聚物、聚乙烯、纤维素酯、矿物填充的聚酯、象牙纸、纺粘聚烯烃和聚氯乙烯的聚合物。
6.权利要求1的方法,其中的红外激光用于加热供体元件的选择区域。
7.权利要求6的方法,其中的供体元件还包含基底和转移层之间的加热层。
8.权利要求7的方法,其中的加热层包含电子束沉积的Ni。
9.权利要求1的方法,其中的供体元件还包含脱模层,该层包含选自聚氯乙烯、氯化的聚氯乙烯、聚甲基丙烯酸甲酯、聚甲基丙烯酸酯共聚物和硝化纤维素的聚合物。
10.权利要求9的方法,其中的脱模层还包含选自重氮烷基化合物、重氮盐和叠氮化合物;铵盐;分解形成氧气的氧化物;碳酸盐;过氧化物其及混合物的发气剂。
11.权利要求1的方法,其中的转移层还包含选自以下的辐射吸收染料:3-H-吲哚鎓,2-[2-[2-氯-3-氢-1,3,3-三甲基-2H-吲哚-2-二价基)亚乙基]-1-环戊烯-1-基]乙烯基]-1,3,3-三甲基-,其与三氟甲磺酸(1∶1)的盐;2-(2-(2-氯-3-(2-(1,3-二氢-1,1-二甲基-3-(4-硫丁基)-2H-苯并吲哚-2-二价基)亚乙基)-1-环己烯-1-基)乙烯基)-1,1-二甲基-3-(4-硫丁基)-1H-苯并吲哚鎓,内盐、游离酸;和4-((3-((2,6-双(1,1-二甲基乙基)-4H-噻喃-4-二价基)甲基-2-羟基-4-氧代-2-环丁烯-1-二价基)甲基)-2,6-双(1,1-二甲基乙基)-,内盐。
12.权利要求1的方法,其中的受体元件还包含粘合剂层,其包含:选自聚碳酸酯、聚氨酯、聚酯、聚氯乙烯、苯乙烯/丙烯腈共聚物、聚(己内酯)、醋酸乙烯酯与乙烯和氯乙烯至少之一的共聚物、(甲基)丙烯酸酯的均聚物、共聚物;压敏粘结剂及其混合物。
13.权利要求1的方法,还包括将图案化的导体材料层施用到多层结构上。
14.一种方法,包括:
a、形成包含基底和转移层的供体元件,其中的转移层包含高介电常数纳米颗粒的分散体或聚合物复合材料;
b、移去转移层的一部分以在基底上形成图案化的转移层;
c、将图案化的层转移到受体元件上。
15.一种制品,包含:
a、透明的、片状形式的尺寸稳定基底;和
b、转移层,其包含高介电常数纳米颗粒和分散剂或聚合物基体。
16.权利要求15的制品,还包含基底和转移层之间的脱模层。
17.权利要求16的制品,其中的脱模层包含分解温度低于275℃的有机材料,其中的有机材料选自聚氯乙烯、氯化的聚氯乙烯、聚甲基丙烯酸甲酯、聚甲基丙烯酸酯共聚物和硝化纤维素。
18.权利要求15的制品,其中的供体元件基底是挠性的。
19.权利要求15的制品,其中的供体元件基底包含等离子体处理的聚酯片。
20.权利要求15的制品,其中的供体元件还在基底和转移层之间包含加热层。
21.权利要求20的制品,其中的加热层包含碳、金属、金属合金或有机粘合剂和红外吸收剂。
22.权利要求21的制品,其中的加热层包含Ni、Al、Cr、W、V或C。
23.权利要求22的制品,其中的加热层包含电子束沉积的Ni。
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JP (1) | JP2007525011A (zh) |
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US20050082523A1 (en) | 2005-04-21 |
JP2007525011A (ja) | 2007-08-30 |
KR20060034239A (ko) | 2006-04-21 |
US7259443B2 (en) | 2007-08-21 |
WO2005004205A2 (en) | 2005-01-13 |
US20080096135A1 (en) | 2008-04-24 |
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