CN1823404B - 半导体装置的制造方法及衬底处理装置 - Google Patents
半导体装置的制造方法及衬底处理装置 Download PDFInfo
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Abstract
本发明提供半导体装置的制造方法,该方法包括以下工序:在反应炉1内,在衬底10上进行成膜的工序;将成膜后的衬底10从反应炉1中卸载后,在反应炉1内没有衬底10的状态下,强制冷却反应炉1内部的工序。与自然空气冷却比较,使反应炉1内部附着的堆积膜的应力增大,积极地产生热应力,使堆积膜发生强于自然空气冷却的强制龟裂。因发生龟裂而飞散的微粒通过大气压状态下的炉内净化被强制且有效地排放到反应炉外。
Description
技术领域
本发明涉及半导体装置的制造方法及衬底处理装置,特别是经化学气相沉积(Chemical Vapor Deposition,CVD)处理的半导体装置的制造方法及衬底处理装置,并且涉及以减少制造过程中产生的微粒为目的的半导体装置的制造方法及衬底处理装置。
背景技术
在制造半导体装置的工序中,在晶圆等被处理衬底上利用化学气相沉积(CVD)法进行成膜处理。
上述成膜处理例如如下进行。即,将规定片数的晶圆装入舟皿中。将装入舟皿中的晶圆装载(load)到反应炉内。对反应炉内部进行真空排气,然后向反应炉内导入反应气体,在晶圆上进行成膜处理。
成膜处理结束后,将反应炉内恢复大气压状态,卸载舟皿。将舟皿完全从炉内卸载,在该状态下冷却舟皿。与此同时,降低反应炉内的温度,进行气体清洗(减压氮气净化)。由此增大附着在反应炉内壁上的堆积膜的应力,使堆积膜发生龟裂,龟裂发生时产生的微粒通过气体清洗而排出(参见日本公开公报-特开2000-306904号)。
发明内容
此种情况下,在已经将处理过的衬底从反应炉内卸载的状态下,降低炉内温度,例如,以自然空气冷却的降温速率(3℃/min)将炉内温度从成膜温度经数十分钟、例如50分钟左右降至150℃左右。但是,3℃/min左右的降温速率使堆积膜产生强制龟裂(由堆积膜和石英反应管之间的热膨胀率不同产生的热应力超过了允许临界值(堆积膜的机械断裂强度)所导致的膜龟裂),由其产生的颗粒排出效率降低,特别是在 φ300mm晶圆的处理中,累积膜厚超过1.2μm时,颗粒大量地产生,尤其是φ300mm晶圆的处理中,颗粒减少效果极低。而且,由于自然空气冷却的温度下降(3℃/min)过程需要50分钟左右的时间,因此存在衬底处理装置(半导体制造装置)的运转率下降、生产率恶化的问题。
本发明的主要目的是提供颗粒减少效果优异、可以改善生产率的半导体装置的制造方法及衬底处理装置。
本发明的一种方案是提供半导体装置的制造方法,其特征在于,该方法包括以下工序:
将衬底装载到反应炉内的工序;
在所述反应炉内,在所述衬底上进行成膜的工序;
将成膜后的所述衬底从所述反应炉内卸载的工序;
卸载所述衬底后,在所述反应炉内没有所述衬底的状态下强制冷却所述反应炉内的工序。
本发明的其他方案是提供半导体装置的制造方法,其特征在于,该方法包括以下工序:
将衬底装载到反应炉内的工序;
在所述反应炉内,在所述衬底上进行成膜的工序;
将成膜后的所述衬底从所述反应炉内卸载的工序;
卸载所述衬底后,在所述反应炉内没有所述衬底的状态下,将炉内温度降至比成膜温度低的温度,同时,在大气压状态下气体清洗所述炉内的工序。
本发明的其他方案是提供半导体装置的制造方法,其特征在于,该方法包括以下工序:
将衬底装载到反应炉内的工序;
在所述反应炉内,在所述衬底上进行成膜的工序;
将成膜后的所述衬底从所述反应炉内卸载的工序;
卸载所述衬底后,在所述反应炉内没有所述衬底的状态下,将炉内温度降至比成膜温度低的温度,同时,向所述炉内供给气体,并使用与在所述成膜工序中使用的排气通路不同的排气通路进行排气的工序。
本发明的其他方案是提供半导体装置的制造方法,其特征在于,该方法包括以下工序:
将衬底装载到反应炉内的工序;
在所述反应炉内,在所述衬底上进行成膜的工序;
将成膜后的所述衬底从所述反应炉内卸载的工序;
卸载所述衬底后,在所述反应炉内没有所述衬底的状态下,将炉内温度升高至比成膜温度高的温度,然后再降至比所述成膜温度低的温度的工序。
本发明的其他方案是提供衬底处理装置,其特征在于,该装置具有以下部件:
对衬底进行成膜的反应炉;
向所述反应炉内供给成膜气体的成膜气体供给通路;
向所述反应炉内供给清洗用气体的清洗用气体供给通路;
排出所述反应炉内气体的排气通路;
将所述衬底放入所述反应炉内/从反应炉内卸载所述衬底的传输装置;
强制冷却所述反应炉内的强制冷却装置;
控制装置,所述控制装置控制所述强制冷却装置,在从所述反应炉中卸载衬底后,在所述反应炉内没有所述衬底的状态下,强制冷却所述反应炉内。
附图说明
图1是表示为说明本发明优选实施方式中的衬底处理装置的纵剖面简图。
图2是表示为说明本发明优选实施方式中的衬底处理装置的纵剖面简图。
图3表示本发明的优选实施方式中的晶圆处理流程图。
图4表示本发明第1实施例中实施LTP时的温度下降幅度与颗粒的关系。
图5表示本发明第2实施例中实施LTP时的温度下降速率与颗粒的关系。
图6表示本发明第3实施例中实施LTP时的累积膜厚与颗粒的关系。
具体实施方式
本发明的优选实施方式是在从反应炉内卸载衬底的状态下利用具有骤冷机构的加热器以大于或等于10℃/min、优选大于或等于20℃/min的降温速率快速骤冷反应炉内,使在半导体制造过程中在反应炉内形成的堆积膜强制发生龟裂,然后利用大气压气体清洗强制排出龟裂发生时产生的微粒,减少微粒对晶圆的附着,由此减少反应炉的清洗频率,从而改善生产率。
下面,参照附图说明本发明的优选实施方式。首先参照图1、图2说明作为本发明的优选实施方式中进行CVD成膜处理的衬底处理装置的半导体制造装置。图1、图2所示的半导体制造装置是热壁型批处理式竖式半导体制造装置。
图1表示将承载了晶圆10的舟皿9装载到反应炉1内,然后用炉口密封盖12密封炉口凸缘2下面的开口部的状态,图2表示将承载了晶圆10的舟皿9从反应炉1卸载移至传输室11,然后用炉口闸门阀13密封炉口凸缘2下面的开口部的状态。
反应炉1是热壁型反应炉,由以下部分构成:金属制炉口凸缘2,在炉口凸缘2上气密设置的石英外管3,在石英外管3内同轴设置的石英内管4,在石英外管3的外侧围绕石英外管3地设置的加热器5等。
被覆石英外管3和加热器5地设置强制冷却机构40。强制冷却机构40由以下部分构成:被覆石英外管3和加热器5地设置的绝热外壳41,与绝热外壳41内部空间连通地设置的供给通路42,通过绝热外壳41顶部的排气孔44与绝热外壳41内部空间连通地设置的排气通路43。供给通路42中设置了导入鼓风机45和闸门46。排气通路43中设置了闸门47、散热器48和排气鼓风机49。
向反应炉1内部导入反应气的气体导入通路6、7连通,同时连通排 气通路30。气体导入通路6、7与炉口凸缘2的低于石英内管4下端的部分连接。排气通路30与炉口凸缘2的低于石英外管3的下端且高于石英内管4下端的部分连接。排气通路30包括以下部分:与真空泵等排气装置8连通的主排气通路31、从主排气通路31分支而设置的高流速排气(HFV:High Flow Vent)通路32、从主排气通路31分支而设置的低流速排风通路(图中未示出)、从主排气通路31分支而设置的防止过度加压通路33以及氮气导入通路34。在主排气通路31与高流速排气通路32的分支点的下游侧设置了作为主阀的APC阀。低流速排气通路上设置了上述APC阀,使其作为旁路。
高流速排气通路32与建筑物附带设备的排气设备连通。高流速排气通路32设定了大于主排气通路31、低流速排气通路(图中未示出)、防止过度加压通路33的排气流量,在大气压下能排放大流量的气体。高流速排气通路32的内径小于主排气通路31的内径,大于低流速排气通路(图中未示出)、防止过度加压通路33的内径。高流速排气通路32设有阀35,通过切换阀35和APC阀,可以使排气路线在主排气通路31和高流速排气通路32之间切换。
防止过度加压通路33设有阀36及单向阀37,当主排气通路31,即,反应炉1内高于大气压时,单向阀37打开,主排气通路31内的环境气体通过单向阀37排出,由此防止主排气通路31,即,反应炉1内变成高于大气压的过度加压状态。
在反应炉1下方的衬底传输室11内设置了作为舟皿传输(升降)装置的舟皿升降机15,升降舟皿9,将舟皿9装载到反应炉1内或从中卸载。将作为被处理衬底的晶圆10在舟皿内以水平姿势、彼此具有一定间隔地填装多段。舟皿9例如可以由石英制成。
如图1所示,将舟皿9装载到反应炉1内,用炉口密封盖12密封炉口凸缘2的下端开口部位的状态下,炉口闸门阀13待避在待避位置14。如图2所示,将舟皿9从反应炉1卸载移至传输室11时,用炉口闸门阀13密封炉口凸缘2的下端开口部位。
通过控制装置20可以控制加热器5的加热、强制冷却装置40的冷却、气体导入通路6、7的气体导入、阀门切换的排气通路选择、排气通路的排气等。
下面,参照图1至图3对作为半导体装置制造工序的一个工序的使用上述装置利用CVD法对半导体硅晶圆进行成膜处理的方法进行说明。另外,在下面的说明中,构成本装置的各部分的运转由控制装置20控制。
如上所述,在反应炉1的下方是衬底传输室11,在舟皿9下降至衬底传输室11内的状态下,通过图中未示出的衬底传输机向舟皿9中填装规定片数的晶圆10(装载晶圆)。在该状态下,使反应炉1内的环境气体保持在大气压下,在向舟皿9填装晶圆10的同时向反应炉1内导入惰性气体,例如氮气。另外,此时反应炉1内的温度设定在600℃。
接下来,利用舟皿升降机15升高舟皿9,将舟皿9装载到温度设定为600℃的反应炉1中(放置舟皿)。将舟皿9装载到反应炉1中后,通过低流速排气通路并利用排气装置8缓慢地对反应炉1的内部进行真空排气(慢速抽真空,Slow Pump)。当反应炉1内的压力降至规定的压力,打开APC阀,通过主排气通路31并利用排气装置8对反应炉1的内部进行真空排气,使其达到规定的压力。
使反应炉1内的温度从600℃升温至730℃~800℃,例如760℃的成膜温度(升温,Ramp Up)、晶圆温度达到成膜温度并稳定时(预热,Pre Heat),利用气体导入通路6、7向反应炉1内导入反应气,对晶圆10实施成膜处理(Depo)。例如,在晶圆10上形成Si3N4膜(氮化硅膜,以下称为SiN)的情况下,使用DCS(二氯硅烷(SiH2Cl2))、氨气等气体。此时,反应炉1内保持730℃~800℃的成膜温度。
成膜处理结束后,通过边向反应炉1内导入惰性气体(例如,氮气)边排气来气体清洗反应炉1内部,除去残留气体(净化,Purge)。然后,关闭主阀,保持惰性气体的导入,从而使反应炉1内部恢复大气压状态(恢复大气压,Back Fill)。接下来,利用舟皿升降机将舟皿9承载的成膜后的晶圆10从反应炉1内降下,卸载在衬底传输室11内(卸载舟皿)。
另外,在舟皿9卸载前炉内温度从760℃降至700℃,这是为了提高舟皿卸载速度。即,将舟皿卸载时反应炉1内的温度设定为低于成膜温度(760℃)的温度(700℃),能使舟皿卸载时晶圆面内的温度差变小,晶圆的弯曲量也变小。在这种状态下,对晶圆不产生不良影响,在某种程度上能够加快舟皿卸载。而且,为了缓和舟皿卸载时对周围部件的热影响,也需要稍微降低温度。
卸载后,用炉口闸门阀13气密密封反应炉的开口(舟皿出入口),即,炉口凸缘2的开口(参见图2)。然后,在衬底传输室11内冷却成膜处理后的晶圆10(冷却晶圆)。衬底传输室11内的晶圆10冷却后,利用图中未示出的衬底传输机将晶圆10从舟皿9中卸载(卸载晶圆,W/F Discharge)。
上述晶圆10的冷却(Wafer Cool)、卸载(W/F Discharge)同时进行,在大气压状态下,使用惰性气体对气密密封的反应炉1内进行气体清洗。例如,进行氮气净化。进行净化时,优选利用气体导入通路6、7以大于或等于20L/min的大流量向反应炉1内供给氮气,同时通过从主排气通路31分支而设置的高流速排气通路32排气。此种情况下,需要打开阀35,关闭主阀。
在上述大气压状态下的炉内净化的同时利用强制冷却机构40以大于自然空气冷却时的降温速率(3℃/min)的降温速率降低(下降)反应炉1内的温度,使炉内温度急剧变化。这使得附着在反应炉1内的堆积膜的应力比自然空气冷却时增大,积极地产生热应力,使堆积膜发生强于自然空气冷却的强制龟裂。利用大气压状态的炉内净化将龟裂产生的飞散微粒强制且有效地排出反应炉外。利用强制冷却机构40降低炉内温度时,开放闸门46、47,利用排气鼓风机49排出绝热外壳41内的高温环境气体,同时利用导入鼓风机45向绝热外壳41内导入空气或氮气等冷却介质。
降温速率至少大于或等于10℃/min,优选大于或等于20℃/min。炉内温度的下降设定为使反应炉1内的温度至少降至成膜温度的1/2(50%)或1/2(50%)以下的温度。即,温度降低幅度(量)至少是成膜温度的 1/2(50%)或1/2(50%)以上。例如,成膜温度为730~800℃时,设定为将反应炉1内的温度从800℃降至400℃。
另外,也可以在降低反应炉1内的温度之前,先将反应炉1内的温度升高至高于成膜温度的温度,然后再降至低于成膜温度的温度。图3的情况下,舟皿卸载后先以40℃/min的升温速率将反应炉1内的温度升高至高于舟皿卸载时的炉内温度(700℃)、且高于成膜温度(760℃)的温度(800℃),然后以20℃/min的降温速率降低至低于成膜温度的温度(400℃)。如上所述,如果在降低炉内温度之前,先使其升高,则不必使降温终点温度低至某种程度即可增大温度下降幅度(温度差),由此能缩短温度下降后的升温时间。
如上所述,炉内温度下降前的升高是为了不必使降温终点温度低至某种程度即可增大温度差(温度下降幅度)。此操作也可以省略,但省略该操作的情况下,温度差(温度下降幅度)变小,颗粒减少效果降低。为了不降低颗粒减少效果而使温度差(温度下降幅度)增大,需要将降温终点温度降至更低,由此导致降温后的升温时间变长、生产率变差。
另外,由于降低炉内温度之前的温度升高还会使炉内温度急剧变化,因此使附着在炉内的堆积膜发生某种程度的龟裂。但是,根据理论计算,炉内温度降低时,石英(炉壁)和堆积膜之间的应力差变大,从而产生更强的龟裂。
另外,在进行不经强制冷却(快速骤冷)而是将炉内温度从800℃慢慢降至400℃,同时进行净化的实验时,附着在炉内的堆积膜基本不发生龟裂,效果不充分。即,只通过增大温度差(温度下降幅度)并不能得到充分的效果。要得到充分的效果,需要(1)温度差(温度下降幅度)和(2)温度下降速度二者都增大。
对于与炉内的强制冷却同时进行的使用惰性气体对反应炉1内进行的气体清洗,与在减压状态下进行气体清洗的情形比较,在大气压状态下进行气体清洗的情形具有颗粒除去效果大的优点。这可以说是因为与减压状态比较,大气压状态下运送杂质的分子、原子多,运送杂质的能量变大。
另外,如果利用涡轮分子泵等真空泵在减压下排出氮气分子,则由于氮气分子分散地存在于氮气流中,氮气分子的平均自由行程变大,因此即使提高氮气的流速,也难以使颗粒变成分子流排出。受热作布朗运动的颗粒不被氮气分子阻挡地因重力而落下的概率高。
与此相反,如果在大气压状态下排气,则气体流速即使降至例如10cm/分钟的程度,也由于氮气分子密集地存在于气体流中,与颗粒撞击,所以容易将颗粒排出。而且,在炉内,氮气流的风从导入侧吹向排气侧,以使颗粒与风一起被吹出炉外。
实际上在进行于减压状态下进行气体清洗、于大气压状态下进行气体清洗的比较实验时,大气压下进行时的颗粒除去效果远远大于减压下进行的效果。
另外,减压净化的情况下,净化后需要进行使炉内恢复大气压的工序,从而消耗时间,而大气压净化时不需要该工序,从而具有缩短时间的优点。
减压净化时,在排气系统或其周围附着的副产物升华,在炉内形成逆流,而大气压净化时不出现上述问题。
另外,在只强制冷却炉内而不进行净化时,产生的颗粒落到炉口闸门阀13上。在进行接下来的成膜时,落在炉口闸门阀13上的颗粒以保持在炉口闸门阀13上的状态退到待避位置14。即,进行接下来的成膜时,能使炉内处于不存在颗粒的状态,从而不影响接下来的处理。另外,在炉口闸门阀13上面设置了沟槽(凹部),由该沟槽容纳落下来的颗粒,从而在炉口闸门阀13退到待避位置14时能防止颗粒的脱落。另外,在待避位置14设置了颗粒除去机构(吸引装置等),在炉口闸门阀13待避期间能除去炉口闸门阀上的颗粒。
如上所述,在从反应炉1卸载晶圆10,并将反应炉1气密密封的状态下,将反应炉1内的温度至少以大于或等于10℃/min、优选大于或等于20℃/min的降温速率降低成膜温度的1/2或1/2以上,同时在大气压状态下用惰性气体清洗反应炉1内部,以上一系列操作是通过控制装置20控制加热器5或强制冷却装置40、气体供给系统、排气系统等进行 的。将如上所述地进行的炉内净化称为低温净化或LTP(LowTemperature Purge)。
在LTP中炉内温度降低前的升温时的优选升温速率为大于或等于3℃/min,较优选10~100℃/min,进一步优选30~100℃/min。而且,炉内温度降低时的优选降温速率为大于或等于3℃/min,较优选10~100℃/min,进一步优选20~100℃/min。
在衬底传输室11内,完成将晶圆10从舟皿9中卸载的操作后,将规定片数的下一批晶圆10利用衬底传输机填装到舟皿9中(晶圆填装)。与此同时,将炉内温度升至备用温度,例如600℃。将晶圆10填装到舟皿9中后,通过舟皿升降机15升高舟皿9,将舟皿9装载到反应炉1内(装载舟皿),继续进行下一批的处理。
在LTP后、装载舟皿前,将炉内温度从400℃升温至600℃是为了缩短下一次成膜中装载舟皿后的炉内升温时间,从而缩短总的成膜时间。假设LTP后将炉内温度保持在LTP的下降终点温度400℃,在下一次成膜时,在400℃进行舟皿装载,然后将炉内温度从400℃升温至760℃,需要升温360℃,升温时间延长。如果LTP后将炉内温度升高至600℃,并保持在此温度,那么在下一次成膜时,在600℃进行舟皿装载,然后将炉内温度从600℃升温至760℃,仅需升温160℃,能缩短升温时间。另外,如果舟皿装载时的炉内温度过高,则会出现晶圆跳跃的问题,考虑到该问题,而将炉内温度保持在600℃。
在上述晶圆处理中,舟皿卸载后,在气密密封反应炉1的状态下(反应炉1内没有晶圆10的状态),大气压状态下氮气净化反应炉1,并在大气压状态下排气。同时利用强制冷却结构40以大于或等于20℃/min的降温速率将炉内温度从800℃降低(下降)至400℃。通过上述温度降低处理,使反应炉1内表面附着的反应副产物堆积膜的应力大于自然空气冷却(降温速率3℃/min)时的应力,积极地产生热应力,使堆积膜发生强于自然空气冷却的强制龟裂。而且,通过在大气压下气体清洗反应炉1内部,因发生龟裂而飞散的微粒被强制且有效地排出反应炉1外。
成膜时的炉内温度比LTP的降温终点温度(400℃)高数百度,经一次降温处理(400℃)后的堆积膜由于应力缓和,因此能避免在下一批处理的SiN成膜时发生龟裂。而且,如果温度升高,则所述堆积膜的应力减小,成膜处理时的堆积膜的应力处于降低状态,因此成膜处理时新龟裂发生的可能性进一步降低。
预先使堆积膜发生龟裂,使伴随龟裂的微粒在舟皿装载前被强制排放到反应炉1外,由此可以在没有微粒的状态下进行晶圆处理。另外,由于能够有效地除去堆积膜产生的颗粒,因此反应炉1的清洗可以在堆积膜脱落前进行。而且,利用本发明能大幅度延长至堆积膜脱落状态的时间,因此能大幅度(至堆积膜的厚度为25μm)延长反应炉1的清洗时间的间隔。
由于SiC与SiN的热膨胀率接近,因此SiC与SiN之间基本不产生应力差。因此,在外管3或内管4等反应管由SiC制成时,基本不能期待LTP的效果。与此相反,由于SiO2(石英)与SiN的热膨胀率差大,因此SiO2与SiN之间的应力差变大。即,在使用石英制的反应管进行SiN膜的成膜时,LTP变得特别有效。
实施例1
下面,作为第1实施例,说明为研究LTP中降温幅度与产生的颗粒的关系而进行的实验。
利用上述实施方案中的晶圆处理方法在φ300mm的硅晶圆上形成SiN膜,特别是形成1次成膜的膜厚大于或等于 的Si3N4膜。反应气可以使用DCS(SiH2Cl2)、氨气,成膜处理温度为730℃~800℃。LTP中的降温速率固定为20℃/min。按300℃、400℃、800℃这样3种情况改变降温幅度,分别进行处理,测定各种情况下处理后的颗粒数。
上述测定结果(LTP中降温幅度和颗粒的关系)如图4所示。横轴表示LTP的降温幅度(℃),纵轴表示附着在晶圆上的0.13μm或0.13μm以上的颗粒数(个/晶圆)。图中,T表示TOP(顶部)的晶圆,B表示BOTTOM(底部)的晶圆。由图4可知,降温幅度为300℃时,颗粒数为60~70个左右,而降温幅度大于或等于400℃时,颗粒数小于或等于40个。即,相对成膜温度730℃~800℃,如果降温幅度大于或等于400℃(成膜温度的50%),则能大幅度(至少小于或等于40个)降低颗粒数。
实施例2
下面,作为第2实施例,说明为研究LTP中降温速率与产生的颗粒的关系而进行的实验。
利用上述实施方案中的晶圆处理方法在φ300mm的硅晶圆上形成SiN膜,特别是形成1次成膜的膜厚大于或等于1500的Si3N4膜。反应气使用DCS(SiH2Cl2)、氨气,成膜处理温度为730℃~800℃。LTP中的降温幅度固定为400℃。按0℃/min、4℃/min、20℃/min这样3种情况改变降温速率,分别进行处理,测定各种情况下处理后的颗粒数。
上述测定结果(LTP中降温速率和颗粒的关系)如图5所示。横轴表示LTP的降温速率(℃/min),纵轴表示附着在晶圆上的0.13μm或0.13μm以上的颗粒数(个/晶圆)。图中,T表示TOP(顶部)的晶圆,B表示BOTTOM(底部)的晶圆。由图5可知,降温速率为0℃/min时(即,未降温的情形),颗粒数在TOP为460个左右,在BOTTOM为60个左右。降温速率为4℃/min时,颗粒数在TOP为大于或等于100个,在BOTTOM为70个左右。而降温速率为20℃/min时,颗粒数在TOP、BOTTOM都小于或等于30个。即,如果使LTP中的降温速率大于或等于20℃/min,则能大幅度(至少小于或等于30个)减少颗粒数。另外,在其他实验中,可以确认如果降温速率至少大于或等于10℃/min,那么与自然空气冷却的情形比较,能大幅度减少颗粒数。
实施例3
下面,作为第3实施例,说明为研究实施LTP时的累积膜厚与颗粒的关系而进行的连续成膜实验。
利用上述实施方案中的晶圆处理方法在φ300mm的硅晶圆上形成SiN膜,特别是形成1次成膜的膜厚大于或等于1500(150nm)的Si3N4 膜。反应气使用DCS(SiH2Cl2)、氨气,成膜处理温度为730℃~800℃。LTP中的降温幅度固定为400℃,降温速率固定为20℃/min。由于晶圆冷却时间为15分钟,晶圆回收时间为15分钟,所以为了不降低生产率,在该合计时间(30分钟)内,与上述操作同时进行LTP。在本实施例中,LTP总时间为30分钟(降温前的升温时间为10分钟、降温时间为20分钟)。在该条件下,对晶圆进行连续批处理,测定每一批处理后晶圆上附着的颗粒数。
上述测定结果(累积膜厚与颗粒的关系)如图6所示。横轴表示连续批处理的次数(Run No.),左侧的纵轴表示晶圆上附着的0.13μm或0.13μm以上的颗粒数(个/晶圆),右侧的纵轴表示累积膜厚(nm)。图中,TOP表示顶部的晶圆,BOTTOM表示底部的晶圆。另外,棒图表示颗粒数,曲线图表示累积膜厚。由图6可知,进行到Run No.119(第119次的批处理),即,直至累积膜厚为23μm(23000nm)时,颗粒数小于或等于50个。另外,本发明人进一步进行实验,确认了在累积膜厚超过25μm(25000nm)的状态下,颗粒数也是小于或等于50个。
不实施本发明的情况下,累积(堆积)膜厚超过1μm(1000nm)时,颗粒数急剧增加,达到远远超过200个的数值。但是,如果实施本发明,则即使在累积膜厚超过25μm(25000nm)的状态下,颗粒数仍小于或等于50个。本实施例的情况下,1次批处理中堆积的膜厚为0.15μm(150nm),所以,对于可将颗粒数抑制在小于或等于50个进行成膜的连续批处理次数,现有例为7次左右,实施本发明时达到167次左右。即,利用本发明能大幅度延长反应炉清洗(cleaning)时间的间隔,大幅度降低反应炉的清洗频率。
通过引用包括说明书、权利要求书、附图及摘要的2003年9月19日申请的日本专利申请第2003-327358号中公开的全部内容,将其包括在本申请内。
以上示出并说明了各种典型的实施方案,但本发明并不限于上述实施方案。所以,本发明的范围仅由权利要求进行限定。
产业上的可利用性
根据以上说明,利用本发明的优选实施方案,能发挥以下优异的效果:能在成膜处理前使反应炉内生成的堆积膜强制发生龟裂,并排出伴随龟裂产生的微粒,由此能抑制成膜处理时微粒的产生,进行高质量的成膜处理;而且,由于可以在堆积膜脱落前实施反应炉的清洗,因此延长了清洗时间的间隔,提高保养性,同时提高运转率;与以往相比不延长处理时间等。
所以,本发明特别适用于具有利用CVD法的成膜工序的半导体装置制造方法及适合实施上述成膜工序的衬底处理装置。
Claims (19)
1.一种半导体装置的制造方法,其特征在于,该方法包括以下工序:
将衬底装载到反应炉内的工序;
在所述反应炉内,在所述衬底上进行成膜的工序;
将成膜后的所述衬底从所述反应炉内卸载的工序;
卸载所述衬底后,在所述反应炉内没有所述衬底的状态下,并且,在所述反应炉内残留有成膜时形成的堆积膜的状态下,通过被覆所述反应炉地设置在所述反应炉外侧的强制冷却机构,强制冷却所述反应炉,同时对所述反应炉内实施气体清洗的工序。
2.如权利要求1所述的半导体装置的制造方法,其特征在于,在强制冷却所述反应炉内的工序中,以大于3℃/min的降温速率降低所述反应炉内的温度。
3.如权利要求1所述的半导体装置的制造方法,其特征在于,在强制冷却所述反应炉内的工序中,以10℃/min至100℃/min的降温速率降低所述反应炉内的温度。
4.如权利要求1所述的半导体装置的制造方法,其特征在于,在强制冷却所述反应炉内的工序中,以20℃/min至100℃/min的降温速率降低所述反应炉内的温度。
5.如权利要求1~4中任一项所述的半导体装置的制造方法,其特征在于,在强制冷却所述反应炉内的工序中,所述反应炉内的温度降低幅度为成膜温度的34%或34%以上。
6.如权利要求1~4中任一项所述的半导体装置的制造方法,其特征在于,在强制冷却所述反应炉内的工序中,所述反应炉内的温度降低幅度为成膜温度的47%或47%以上。
7.如权利要求1~4中任一项所述的半导体装置的制造方法,其特征在于,在强制冷却所述反应炉内的工序中,所述反应炉内的温度降低幅度为成膜温度的1/2或1/2以上。
8.如权利要求1所述的半导体装置的制造方法,其特征在于,在强制冷却所述反应炉内的工序中,通过所述强制冷却机构强制冷却所述反应炉内,从而强制地使形成在所述反应炉内的堆积膜发生龟裂,此时,通过对所述反应炉内实施气体清洗,将发生所述龟裂时产生的颗粒排出所述反应炉外。
9.如权利要求1所述的半导体装置的制造方法,其特征在于,在强制冷却所述反应炉内的工序中,以至少10L/min或10L/min以上的流量向所述反应炉内供给清洗用气体,对所述反应炉内实施气体清洗。
10.如权利要求1所述的半导体装置的制造方法,其特征在于,在强制冷却所述反应炉内的工序中,以至少20L/min或20L/min以上的流量向所述反应炉内供给清洗用气体,对所述反应炉内实施气体清洗。
11.如权利要求1所述的半导体装置的制造方法,其特征在于,在卸载所述衬底的工序之后、强制冷却所述反应炉内的工序之前,还进行在所述反应炉内没有所述衬底的状态下将所述反应炉内的温度升高至比成膜温度高的温度的工序。
12.如权利要求1所述的半导体装置的制造方法,所述方法具有在装载所述衬底的工序之前将所述衬底装载在支撑体上的工序,
装载所述衬底的工序在所述衬底支撑在所述支撑体上的状态下进行,
在所述衬底上进行成膜的工序在所述衬底支撑在所述支撑体上的状态下进行,
卸载所述衬底的工序在成膜后的所述衬底支撑在所述支撑体上的状态下进行,
在卸载所述衬底的工序后,还具有用所述支撑体取下成膜后的所述衬底的工序,和将随后成膜的衬底装载到所述支撑体上的工序,
强制冷却所述反应炉内的工序与将成膜后的所述衬底从所述支撑体上取下的工序和/或将随后成膜的衬底装载到所述支撑体上的工序并行进行。
13.如权利要求1所述的半导体装置的制造方法,其特征在于,在所述衬底上进行成膜的工序中,在所述衬底上形成氮化硅膜。
14.一种半导体装置的制造方法,其特征在于,该方法包括以下工序:
将衬底装载到反应炉内的工序;
在所述反应炉内,在所述衬底上进行成膜的工序;
将成膜后的所述衬底从所述反应炉内卸载的工序;
卸载所述衬底后,在所述反应炉内没有所述衬底的状态下,并且,在所述反应炉内残留有成膜时形成的堆积膜的状态下,通过被覆所述反应炉地设置在所述反应炉外侧的强制冷却机构,强制冷却所述反应炉内,同时,在大气压状态下对所述反应炉内实施气体清洗的工序。
15.一种半导体装置的制造方法,其特征在于,该方法包括以下工序:
将衬底装载到反应炉内的工序;
在所述反应炉内,在所述衬底上进行成膜的工序;
将成膜后的所述衬底从所述反应炉内卸载的工序;
卸载所述衬底后,在所述反应炉内没有所述衬底的状态下,并且,在所述反应炉内残留有成膜时形成的堆积膜的状态下,通过被覆所述反应炉地设置在所述反应炉外侧的强制冷却机构,强制冷却所述反应炉内,同时,向所述反应炉内供给气体,并使用与在所述衬底上进行成膜的工序中使用的排气通路不同的排气通路排气,由此对所述反应炉内实施气体清洗的工序。
16.一种半导体装置的制造方法,其特征在于,该方法包括以下工序:
将衬底装载到反应炉内的工序;
在所述反应炉内,在所述衬底上进行成膜的工序;
将成膜后的所述衬底从所述反应炉内卸载的工序;
卸载所述衬底后,在所述反应炉内没有所述衬底的状态下,并且,在所述反应炉内残留有成膜时形成的堆积膜的状态下,将所述反应炉内的温度升高至比成膜温度高的温度的工序,
然后,在所述反应炉内没有所述衬底的状态下,并且,在所述反应炉内残留有成膜时形成的堆积膜的状态下,通过被覆所述反应炉地设置在所述反应炉外侧的强制冷却机构,强制冷却所述反应炉内,将所述反应炉内的温度降至比所述成膜温度低的温度,同时对所述反应炉内实施气体清洗的工序。
17.如权利要求16所述的半导体装置的制造方法,其特征在于,从使所述反应炉内的温度升高至使其降低为止的所述反应炉内的温度降低幅度为所述成膜温度的1/2或1/2以上。
18.如权利要求16所述的半导体装置的制造方法,其特征在于,从使所述反应炉内的温度升高至使其降低为止的所述反应炉内的温度降低速率为10℃/min至100℃/min,所述反应炉内的温度降低幅度为400℃以上。
19.一种衬底处理装置,其特征在于,该装置具有以下部件:
对衬底进行成膜的反应炉;
向所述反应炉内供给成膜气体的成膜气体供给通路;
向所述反应炉内供给清洗用气体的清洗用气体供给通路;
排出所述反应炉内气体的排气通路;
将所述衬底装载到所述反应炉内/从所述反应炉内卸载所述衬底的传输装置;
覆盖所述反应炉地设置在所述反应炉外侧的强制冷却所述反应炉内的强制冷却装置;
控制强制冷却装置及清洗用气体供给通路的控制装置,在从所述反应炉中卸载衬底后,在所述反应炉内没有所述衬底的状态下,并且,在所述反应炉内残留有成膜时形成的堆积膜的状态下,将所述反应炉内强制冷却,同时对所述反应炉内实施气体清洗。
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JP4531833B2 (ja) * | 2007-12-05 | 2010-08-25 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びクリーニング方法 |
JP5697849B2 (ja) * | 2009-01-28 | 2015-04-08 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
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US6368405B1 (en) * | 1998-12-24 | 2002-04-09 | Hyundai Electronics Industries Co., Ltd. | Apparatus for growing single crystal silicon and method for forming single crystal silicon layer using the same |
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CN101914760B (zh) | 2012-08-29 |
JP2010109387A (ja) | 2010-05-13 |
JP5452043B2 (ja) | 2014-03-26 |
US20090239386A1 (en) | 2009-09-24 |
US20070259532A1 (en) | 2007-11-08 |
JP2010098331A (ja) | 2010-04-30 |
TWI449104B (zh) | 2014-08-11 |
US8231731B2 (en) | 2012-07-31 |
TW201145390A (en) | 2011-12-16 |
WO2005029566A1 (ja) | 2005-03-31 |
CN101429649A (zh) | 2009-05-13 |
KR100765681B1 (ko) | 2007-10-12 |
US8636882B2 (en) | 2014-01-28 |
CN101429649B (zh) | 2012-06-13 |
TWI389204B (zh) | 2013-03-11 |
JP2009135541A (ja) | 2009-06-18 |
JP5190077B2 (ja) | 2013-04-24 |
KR100938534B1 (ko) | 2010-01-25 |
TW201310530A (zh) | 2013-03-01 |
TWI360179B (en) | 2012-03-11 |
KR20060066168A (ko) | 2006-06-15 |
JP5199286B2 (ja) | 2013-05-15 |
JPWO2005029566A1 (ja) | 2007-11-15 |
CN1823404A (zh) | 2006-08-23 |
KR20090055650A (ko) | 2009-06-02 |
US7955991B2 (en) | 2011-06-07 |
US20110239936A1 (en) | 2011-10-06 |
KR100943588B1 (ko) | 2010-02-23 |
KR20070091229A (ko) | 2007-09-07 |
TW200514162A (en) | 2005-04-16 |
CN101914760A (zh) | 2010-12-15 |
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