CN1866561A - 发光器件封装及其制造方法 - Google Patents
发光器件封装及其制造方法 Download PDFInfo
- Publication number
- CN1866561A CN1866561A CNA2006100840531A CN200610084053A CN1866561A CN 1866561 A CN1866561 A CN 1866561A CN A2006100840531 A CNA2006100840531 A CN A2006100840531A CN 200610084053 A CN200610084053 A CN 200610084053A CN 1866561 A CN1866561 A CN 1866561A
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- luminescent device
- conductive plate
- light transmitting
- transmitting material
- substrate
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Abstract
本发明涉及发光器件封装及其制造方法。本发明的优点在于,发光器件被电气地连接到其它器件而不使用引线接合,由此节省了用于引线接合的空间并且减小了封装的尺寸。本发明具有的优点在于,通过使用导电互连部分,在发光器件中不存在引线,从而能够容易地且均匀地涂覆磷光体,并且能够减少吸收垂直发射光的面积,从而能够增强器件的光提取。
Description
技术领域
本发明涉及一种发光器件封装及其制造方法。
背景技术
通常,发光器件基本上包括p型和n型半导体的结,并且是如下类型的光电器件,其中在对其施加电压时,由于电子和空穴的复合,与半导体的带隙相对应的能量以光的形式发射。
从发光器件输出的光的量与流过该器件的电流成正比地增加。
已经对如下发光器件进行了积极的研究,即其功耗低、不使用有害物质、色彩再现性能好并且寿命延长到好几万小时或更长。
借助于薄膜生长技术和器件材料的发展,使用直接跃迁类型半导体的III-V族或者II-VI族化合物半导体材料的诸如发光二极管(LED)或激光二极管的发光器件能够实现红色、绿色和紫外线。
此外,通过使用荧光物质或者通过组合光,发光器件能够实现具有高效率的白色光源。
随着这种技术的发展,发光器件不仅被用在用于显示的设备中,而且被用在诸如发射模块、液晶显示(LCD)的背光、能够替代荧光灯或者白炽灯泡的发光系统、标志牌以及汽车的仪表板等各领域。
同时,如果在红色或者红外发光器件中衬底是n型的,则在衬底的上表面上依次层叠n型层、有源层和p型层,在衬底的下表面下形成n型电极层,并且在p型层的上表面上形成p型电极层。
如果在红色发光器件中的n型和p型电极层之间施加正向电压,则电子通过n型层注入到有源层中,而空穴通过p型层注入到有源层中。
此时,注入到有源层中的电子和空穴复合,并且然后发射与有源层的带隙或者能级差相对应的光。
如上所述,红色或者红外发光器件具有n型和p型电极层彼此面对且衬底位于二者其间的结构。
因此,在现有技术中,至少一个电极应该进行引线接合,从而红色或红外发光器件能够与基座或印刷电路板(PCB)接触并且与其它器件电气地连接。
因此,应该提供用于向基座或PCB进行引线接合的一定空间。这使得增加了封装的尺寸,并且由于引线的短路或者断路而引起封装的可靠性的降低。
将参考图1来描述该现有技术。
图1是使用引线接合的现有发光器件的剖面图。在衬底(100)的上表面上形成有第一和第二导电盘(110,111),它们彼此隔开。
此外,形成在发光器件(120)的下表面下的第二电极层(123)接合到第一导电盘(110)的上表面上,并且形成在发光器件(120)的上表面上的第一电极层(122)和第二导电盘(111)被引线接合,以在其间进行电气连接。
由硅(Si)或陶瓷制成的基座、或者PCB用作衬底(100)。
第一导电盘(110)形成在衬底(100)的上表面上。
此外,第一导电盘(110)具有与形成在发光器件(120)的下表面下的第二电极(123)相同的极性。
例如,如果形成在发光器件(120)的下表面下的第二电极(123)是n型的,则第一导电盘(110)也是n型的。如果形成在发光器件(120)的下表面下的第二电极(123)是p型的,则第一导电盘(110)也是p型的。
第二导电盘(111)形成在衬底(100)的上表面上,使得其与第一导电盘(110)分开。
发光器件(120)被接合到第一导电盘(110)的上表面上。
图2是示出了根据现有技术排列并封装发光器件的状态的剖面图。在发光器件封装的衬底(100)上形成多个导电盘(112a,112b,112c,112d,112e,112f)。
此外,红色发光器件(130)的下电极(131)用导电粘结剂(135)接合到导电盘(112a)的上表面,并且红色发光器件(130)的上电极(132)被接合到另一导电盘(112b)。
此外,绿色发光器件(140)用粘结剂(145)接合到衬底(100),并且绿色发光器件(140)的两个上电极(141,142)分别被引线接合到两个导电盘(112c,112d)。
此外,蓝色发光器件(150)用粘结剂(155)接合到衬底(100),并且蓝色发光器件(150)的两个上电极(151,152)分别被引线接合到两个导电盘(112e,112f)。
该发光器件封装在衬底上贴装了红色、绿色和蓝色发光器件,以实现发射白光的封装。此时,执行了几次引线接合。
如上所述,不利之处在于,在现有的发光器件中,还需要用于引线接合发光器件的空间,这导致增加了封装的尺寸。
此外,由于接合的引线会短路或者断路,所以器件之间的连接的可靠性受到损害。
此外,引线接合不适合于批量生产。
同时,大致有两种方法能够被用于制作白色发光二极管。首先,是在蓝色或者UV LED芯片上组合荧光物质以获得白光的单芯片型方法。其次,是两个或者三个LED芯片彼此组合以获得白光的多芯片型方法。此时,如果使用单芯片型方法,必然需要在制作的LED上涂覆磷光体。
图3a和3b是示意性地示出了将磷光体涂覆于现有的发光器件封装的状态的示意图。具有一个依次层叠在另一个上的p型层(157)、有源层(156)和n型层(155)的LED被结合到基座(160),且p-欧姆接触金属层(162)介于LED和基座之间,并且在n型层(155)上形成有n-欧姆接触金属层(163)。
在此,引线(159)被接合到n-欧姆接触金属层(163),其中通过引线(159)来为LED提供电流。
此时,涂覆磷光体以包围LED和一部分引线(159),如图3a和3b所示。
通常,为了形成磷光体薄膜,优选的是在器件的要涂覆磷光体的上表面上没有凸凹部分。但是,由于在图3a和3b所示的现有发光器件封装中,引线被接合到LED的顶部,因此难以涂覆磷光体而不损坏引线。
此外,为了执行引线接合,在考虑焊盘的图案面积的情况下制作器件。但是,如果包含焊盘和引线的引线接合部分位于LED的顶部,则会发生部分地隐蔽垂直发光面积的缺点。
也就是说,尽管引线接合需要大约0.1×0.1mm2的面积,但是引线接合部分隐蔽了0.3×0.3mm2的芯片中的发光面积的1/9。
此外,在制造高性能LED中的趋势是,其整个面积变大,并且如果需要,可以增加欧姆金属盘的数量以降低电阻。
由于高性能LED以高电流来工作,所以显然应该减小串联电阻以防止热积累。此外,使欧姆接触金属较厚以减小电压降,由此增强光提取效率。
但是,由于对淀积厚金属的限制和位于LED的顶部的引线焊盘的面积应该增加以防止由于欧姆接触金属之内的电压降引起的LED性能的恶化,所以LED的垂直发光面积不可避免地增加。
发明内容
设计了本发明以解决上述问题。因此,本发明的一个目的是提供一种发光器件封装及其制造方法,其中发光器件被电气地连接到其它器件而不使用引线接合,从而能够降低用于引线接合的空间,以减封装的尺寸,并且能够减少由引线接合引起的短路或者断路,以提高封装的可靠性。
本发明的另一个目的是提供一种发光器件封装以及制造方法,其中在其上贴装有发光器件的衬底上涂覆光透射材料膜,从而能够省去能保护发光器件的其它钝化膜,并且不需要引线接合,以允许降低制造成本和批量生产。
本发明的再一个目的是提供一种发光器件封装以及制造方法,其中在发光器件处使用导电互连部分而不使用引线,从而能够容易地进行磷光体的均匀涂布,并且能够减小吸收垂直发射光的面积,以提高器件的光提取。
根据用于实现上述目的的本发明的第一优选方面,提供一种发光器件封装,包括:具有形成在其上的导电盘的衬底;发光器件,其贴装在衬底上,并且具有形成在发光器件的顶部和底部中的至少一个上的电极盘;光透射材料膜,用于包围导电盘和发光器件,同时暴露出导电盘和形成在发光器件的顶部和底部中的至少一个上的电极盘的每一个的一部分;以及导电线,其沿着光透射材料膜的表面从导电盘的暴露部分形成到发光器件的电极盘的暴露部分。
根据用于实现上述目的的本发明的第二优选方面,提供一种发光器件封装,包括:具有形成在其上的一对导电盘的衬底;发光器件,其贴装在衬底上,并且具有形成在发光器件的顶部上的一对电极盘;光透射材料膜,用于包围导电盘和发光器件,同时暴露出该对导电盘的每一个的一部分和该对电极盘的每一个的一部分;以及一对导电线,其沿着光透射材料膜的表面从该对导电盘的每一个的暴露部分形成到该对电极盘的每一个的暴露部分。
根据用于实现上述目的的本发明的第三优选方面,提供一种发光器件封装,包括:发光器件;导电盘,其位于发光器件外部并且电气地连接到外部电源;以及至少一个互连部分,用于将发光器件的一面或者两面连接到导电盘。
根据用于实现上述目的的本发明的第四优选方面,提供一种用于制造发光器件封装的方法,包括:将具有形成在发光器件的顶部和底部中的至少一个上的电极盘的发光器件贴装在具有形成在其上的导电盘的衬底上;形成光透射材料膜,用于包围导电盘和发光器件,同时暴露出导电盘和形成在发光器件的顶部和底部中的至少一个上的电极盘的每一个的一部分;以及形成导电线,其沿着光透射材料膜的表面从导电盘的暴露部分形成到发光器件的电极盘的暴露部分。
根据用于实现上述目的的本发明的第五优选方面,提供一种用于制造发光器件封装的方法,包括:将形成有一对电极盘的发光器件贴装在具有形成在其上的一对导电盘的衬底上;形成光透射材料膜,用于包围导电盘和发光器件,同时暴露出该对导电盘的每一个的一部分和该对电极盘的每一个的一部分;以及形成一对导电线,其沿着光透射材料膜的表面从该对导电盘的每一个的暴露部分形成到该对电极盘的每一个的暴露部分。
附图说明
从结合附图给出的优选实施例的如下描述中,本发明的上述和其它目的、特征和优点将更加清楚,其中:
图1是使用引线接合的现有发光器件的剖面图;
图2是示出了根据现有技术排列并封装发光器件的状态的剖面图;
图3a和3b是示意性地示出了将磷光体涂布于现有发光器件封装的状态的剖面图;
图4是根据本发明的第一实施例的发光器件封装的剖面图;
图5是根据本发明的第一实施例的具有应用于此的非导电衬底的发光器件封装的剖面图;
图6是根据本发明的第一实施例的具有应用于此的非导电衬底的发光器件封装的剖面图;
图7a到7c是示出了制造根据本发明的第一实施例的发光器件封装的工艺的剖面图;
图8a和8b是示出了根据本发明形成光透射材料膜的工艺的例子的剖面图;
图9a和9b是示出了根据本发明形成光透射材料膜的工艺的另一个例子的剖面图;
图10是示出了根据本发明的第二实施例的发光器件封装的示意性剖面图;
图11a到11c是示出了制造根据本发明的第二实施例的发光器件封装的工艺的剖面图;
图12是示出了根据本发明排列并封装的发光器件的状态的剖面图;
图13是通过排列根据本发明的发光器件来实现白色光源的封装的剖面图;
图14是通过排列根据本发明的发光器件来实现白色光源的另一个封装的剖面图;
图15是示出了在根据本发明的第三实施例的发光器件封装上丝网印刷磷光体的状态的示意性剖面图;
图16是根据本发明的第三实施例的另一个发光器件封装的剖面图;
图17是具有存在于其上的引线接合部分的现有激光剥离GaN基光发射二极管(LED)的平面图;
图18a到18d是示出了根据本发明的第三实施例导电盘位于LED部分之外的状态的平面图;
图19a到19d是示出了根据本发明的第三实施例制造具有互连部分的高性能激光剥离发光器件封装的工艺的示意图;
图20是示出了导电盘与单元芯片的整个面积的面积比的图。
具体实施方式
下面,将参考附图详细描述本发明的优选实施例。
图4是根据本发明的第一实施例的发光器件封装的示意性剖面图。该发光器件封装包括:具有形成在其上的导电盘(210)的衬底(200);发光器件(300),其贴装在衬底(200)上,并且具有分别形成在发光器件(300)的顶部和底部上的电极盘(301,302);光透射材料膜(400),其包围导电盘(210)和发光器件(300),同时暴露出导电盘(210)和形成在发光器件(300)的顶部上的电极盘(301)中的每一个的一部分;以及导电线(500),其沿着光透射材料膜(400)的表面从导电盘(210)的暴露部分形成到发光器件(300)的暴露部分。
在此,光透射材料膜(400)优选地由能够透射光的光敏材料制成。
优选地,光敏材料是几乎能够透射所有光而不吸收红色或红外线的光敏材料,并且是具有优良耐热和耐化学性的SU-8聚合物。
此外,在光透射材料膜(400)中可以分散能够对从发光器件(300)发射的光进行波长转换的磷光体。
在该情况中,从发光器件(300)发射的并由磷光体进行波长转换的光被进行颜色混合,由此引入了白色光源。
此外,具有分别形成在其顶部和底部上的电极盘(301,302)的发光器件(300)优选地是红色或红外发光器件。
同时,使用粘结剂(310)将发光器件(300)贴装在衬底(200)上。粘结剂310优选的是导电胶或焊料金属。
此外,衬底(200)包括由诸如硅的半导体制成的半导体衬底、非导电衬底、或者诸如金属的导电材料制成的导电衬底。
此外,发光器件(300)优选的是发光二极管(LED),该发光二极管包括具有第一极性的半导体层、有源层和具有与第一极性相反的极性的半导体层。
而且,光透射材料膜(400)暴露出导电盘(210)和形成在发光器件(300)的顶部上的电极盘(301)中的每一个的一部分。如图4所示,光透射材料膜(400)可以形成为完全包围导电盘(210)和发光器件(300)的结构,或者仅形成在位于沿着从导电盘(210)到电极盘(301)的最短距离的区域中。
由于两种情况具有它们自身的优点,所以光透射材料膜可以自由设计。
而且,光透射材料膜(400)优选地形成在发光器件(300)的一部分上,并且还设置包围光透射材料膜(400)和发光器件(300)的磷光体膜。
图5是根据本发明的第一实施例的具有应用于此的非导电衬底的发光器件封装的剖面图。如果图4的结构中使用的衬底被图5所示的非导电衬底(201)代替,则该发光器件封装具有如下结构,其中:在非导电衬底(201)的上部区域上形成另一个导电盘(211),其与通过导电线(500)连接到发光器件(300)的电极盘(301)的导电盘(210)分隔开,并且形成在发光器件(300)下的电极盘(302)使用导电粘结剂(311)接合到另一个导电盘(211)。
图6是根据本发明的第一实施例的具有应用于此的导电衬底的发光器件封装的剖面图。如果图4的结构中使用的衬底被导电衬底(202)替代,则发光器件封装具有如下结构,其中:绝缘膜(250)介于导电衬底(202)和通过导电线(500)连接到发光器件(300)的电极盘(301)的导电盘(210)之间,并且形成在发光器件(300)下的电极盘(302)使用导电粘结剂(311)接合到导电衬底(202)。
图7a到7c是示出了制造根据本发明的第一实施例的发光器件封装的工艺的剖面图。首先,将具有分别形成在其顶部和底部上的电极盘(301,302)的发光器件(300)贴装在具有形成在其上的导电盘(210)的衬底(200)上(图7a)。
此后,形成包围导电盘(210)和发光器件(300)的光透射材料膜(400),同时暴露出导电盘(210)和形成在发光器件(300)的顶部上的电极盘(301)中的每一个的一部分(图7b)。
如后面将描述的,通过如下工艺形成光透射材料膜(400):在导电盘(210)和发光器件(300)上涂覆光透射材料以形成一膜,并选择性地去除该膜以暴露出导电盘(210)和形成在发光器件(300)的顶部上的电极盘(301)的各部分。
接着,沿着光透射材料膜(400)的表面从导电盘(210)的暴露部分到发光器件(300)的电极盘(301)的暴露部分形成导电线(500)(图7c)。
在此,当使用导电材料使导电盘(210)的暴露部分和形成在发光器件(300)的顶部上的电极盘(301)彼此连接时,形成导电线(500)。
从内阻的角度考虑,导电线(500)应该以均匀厚度进行连接,以降低公差。
因此,通过剥离或者硬掩模技术,使用导电材料,使导电盘(210)和发光器件(300)的电极盘(301)彼此连接。
在剥离技术中,当光透射材料膜(400)由光敏材料制成,并且在光透射材料膜(400)上淀积导电材料之后通过使用适当的液体溶液来选择性地刻蚀光透射材料膜(400)时,已经被刻蚀的光透射材料膜(400)的导电材料被剥离并去除。
因此,借助于剥离技术,通过导电材料使导电盘(210)和发光器件(300)的电极盘(301)彼此连接。
此外,在硬掩模技术中,形成固定框架以通过导电材料使导电盘(210)和发光器件(300)的电极盘(301)彼此连接,并且然后将导电材料喷射到形成的框架上。
因此,借助于喷射,通过导电材料使导电盘(210)和发光器件(300)的电极盘(301)彼此连接。
图8a和8b是示出了根据本发明形成光透射材料膜的工艺的例子的剖面图。为了形成图7b所示的光透射材料膜(400),首先将光透射材料涂覆在衬底(200)上,同时包围导电盘(210)和发光器件(300)。
通过光透射材料的涂覆形成的膜被定义为涂覆膜(410)。
此外,当涂覆光透射材料时,如图8a所示使用喷涂技术。
喷涂技术是能够在衬底中存在大台阶的情况下进行均匀涂覆的技术。
也就是说,当发光器件(300)被接合到衬底(200)时,被接合了发光器件(300)的衬底部分的高度显著地高于没有接合发光器件(300)的衬底部分的高度。
因此,尽管在衬底(200)的整个表面上均匀地涂覆光透射材料是相当困难的,但是喷涂技术使得光透射材料能够以均匀的厚度被涂覆在其中存在大台阶的结构上,由此从内部电阻的角度看降低了公差。
此后,对涂覆膜(410)进行构图,以暴露出导电盘(210)和形成的发光器件(300)的顶部上的电极盘(301)中的每一个的一部分(图8b)。
因而,通过图8a和8b的工艺形成了图7b所示的光透射材料膜(400)。
同时,优选地通过光刻工艺来进行构图。
此时,如果光透射材料膜(400)是光敏材料,那么能够更加容易地执行光刻工艺。
例如,在光敏材料的上表面上形成掩模,并且在其上进行光辐射。然后,根据光敏材料的特性,被光辐射或者没有被光辐射的光敏材料部分能够使用丙酮等物质容易地去除。
也就是说,借助于刻蚀,暴露出导电盘(210)和发光器件(300)的电极盘(301)的各部分。
图9a和9b是示出了根据本发明形成光透射材料膜的工艺的另一个例子的剖面图。可以根据图8a所示的导电盘和发光器件的形状来形成光透射材料膜。或者,形成顶部平坦的平坦膜,同时包围导电盘(210)和发光器件(300),由此有助于形成导电线。
也就是说,在该方法中,在图7a的工艺之后,形成顶部平坦且包围导电盘(210)和发光器件(300)的光透射材料膜(400)(图9a)。
然后,通过去除从光透射材料膜(400)的顶部到导电盘(210)和发光器件(300)的电极盘(301)的各部分光透射材料膜(400)来形成一对沟槽(401,402),将导电材料(511,512)分别填充到该对沟槽(401,402)中,并且执行形成连接导电材料(511,512)的导电层(513)的工艺(图9b)。
因而,导电线包括:分别填充在该对沟槽(401,402)中的导电材料(511,512),其中沟槽(401,402)是通过去除从光透射材料膜(400)的顶部到导电盘(210)和发光器件(300)的电极盘(301)的光透射材料膜(400)的各部分而形成的;以及导电层(513),其形成在光透射材料膜(400)上,用于使填充在该对沟槽(401,402)中的导电材料(511,512)彼此连接。
图10是示出了根据本发明的第二实施例的发光器件封装的示意性剖面图。第二实施例的发光器件封装包括:具有形成在其上的一对导电盘(210,211)的衬底(200);发光器件(350),其贴装在衬底(200)的顶部上,并且具有形成在其上的一对电极盘(351,352);光透射材料膜(400),用于包围导电盘(210,211)和发光器件(350),同时暴露出该对导电盘(210,211)的各部分和该对电极盘(351,352)的各部分;以及一对导电线(500a,500b),其分别沿着从该对导电盘(210,211)的暴露部分到该对电极盘(351,352)的暴露部分的光透射材料膜(400)的表面形成。
在此,如果衬底(200)是导电衬底,则在导电盘(210,211)和衬底(200)之间插入绝缘膜。
此外,发光器件(350)优选地是绿色或者蓝色发光器件。
图11a到11c是示出了制造根据本发明的第二实施例的发光器件封装的工艺的剖面图。如图11a所示,具有在其上形成的一对电极盘(351,352)的发光器件(350)被接合到具有在其上的一对导电盘(210,211)的衬底(200)的顶部。
然后,形成包围导电盘(210,211)和发光器件(350)的光透射材料膜(400),同时暴露出该对导电盘(210,211)的各部分和该对电极盘(351,352)的各部分(图11b)。
最后,分别沿着从该对导电盘(210,211)的暴露部分到该对电极盘(351,352)的暴露部分的光透射材料膜(400)的表面形成一对导电线(501,502)(图11c)。
图12是示出了根据本发明排列并封装的发光器件的状态的剖面图。具有分别形成在其顶部和底部上的电极盘(301,302;305,306)的多个发光器件(300a,300b)被接合,以对应于多个导电盘(213b,213c)。
此时,发光器件(300a,300b)没有接合到导电盘(213a),并且光透射材料膜(400)包围导电盘(213a,213b,213c)和发光器件(300a,300b),同时暴露出导电盘(213a,213b,213c)和分别形成的发光器件(300a,300b)的顶部上的电极盘(301,305)的各部分。
此外,沿着光透射材料膜(400)的表面形成用于将没有接合发光器件(300a,300b)的导电盘(213a)连接到与其相邻的发光器件(300a)的电极盘(301),并且沿着光透射材料膜(400)的表面形成用于将接合了发光器件(300a)的导电盘(213b)连接到另一发光器件(300b)的电极盘(305)。
因此,能够实现两个发光器件并联连接而不使用引线接合技术的封装。
图13是通过排列根据本发明的发光器件来实现白色光源的封装的剖面图。将具有在其顶部和底部上分别形成的电极盘(301,302)的发光器件(300)以与第一实施例相同的方式封装在衬底(200)上。
此外,将每一个都具有在其上形成的一对电极盘(351,352;361,362)的两个发光器件(350,360)以与第二实施例相同的方式封装。
具有分别在其顶部和底部上形成的电极盘(301,302)的发光器件(300)是红色发光器件,每一个都具有在其上形成的一对电极盘(351,352;361,362)的发光器件(350,360)是绿色和蓝色发光器件。
因而,能够实现能发射白光的封装,其中红色、绿色和蓝色发光器件被贴装在衬底上,并且这些发光器件电气地彼此连接而没有引线接合。
图14是通过排列根据本发明的发光器件来实现白色光源的另一个封装的剖面图。在衬底(200)上形成有六个导电盘(214a,214b,214c,214d,214e,214f),并且使用两个导电盘(214a,214b)将具有在其顶部和底部上分别形成的电极盘(301,302)的发光器件(300)贴装在衬底(200)上,并然后进行封装而没有引线接合。
每一个都具有形成在其底部上的一对电极盘(351,352;361,362)的两个发光器件(350,360)被倒装接合到其余的四个导电盘(214c,214d,214e,214f)。
因此,封装了三个发光器件而不使用引线。如果倒装接合到导电盘的两个发光器件(350,360)分别是绿色和蓝色发光器件(350,360),并没有倒装接合的发光器件(300)是红色发光器件,则能够实现能发射白光的封装。
下面的实施例是本发明的第三实施例。发光器件封装包括:发光器件;导电盘,其位于发光器件外部并且电气地连接到外部电源;以及一个或多个互连部分,用于将导电盘连接到发光器件的一面或者两面,下面将描述用于制造该发光器件封装的方法。
显然,在本发明的第三实施例中,也没有引线接合地制造封装。
图15是示出了在根据本发明的第三实施例的发光器件封装上丝网印刷磷光体的状态的示意性剖面图。如果形成将多个发光器件贴装在衬底上并且每个发光器件通过互连部分(717)连接到导电盘的封装,则存在如图5所示的能够借助于丝网印刷一次涂布磷光体(718)的优点,由此降低了制造成本并能够批量生产。
此外,图15中的参考标号“719”表示透明绝缘膜,并且其由与第一和第二实施例中的光透射材料膜相同或不同的材料制成。
此外,肉眼看基本上是透明的并且光能够透过的绝缘材料优选地被形成为本发明的第三实施例中的透明绝缘膜(719)。
此外,在本发明的第三实施例中,沿着发光器件的侧面并且根据形成在衬底(710)上的、从作为发光器件的上电极的欧姆接触金属层(713)到形成在衬底(710)上的n型导电盘(715)的绝缘膜(720)的形状,形成透明绝缘膜,如图15所示。
图16是根据本发明的第三实施例的另一个发光器件封装的剖面图。一对导电盘,例如n型导电盘(715)和p型导电盘(716),存在于形成在衬底(710)的平面中的绝缘膜(720)上,并且将LED的p型层、有源层和n型层依次形成为p型导电盘(716)上的堆叠结构。
此时,p-欧姆接触金属层(712)被接合到与p型层相邻的p型导电盘的表面上。
本领域内公知的衬底可以被用作其上贴装有LED的衬底(710),并且衬底可以由CuW、Si、AlN陶瓷、Al2O3陶瓷等制成。
衬底的尺寸可以比LED的尺寸大,或者在LED生长在蓝宝石衬底上的情况下,比蓝宝石衬底的尺寸大或者与蓝宝石衬底的尺寸相同。
图15所示,使用本领域公知的III-V族化合物,通过依次层叠p型层(707)、有源层(706)和n型层(705)来形成LED,并且该化合物的非限制性例子包括GaAs、GaP、GaN、InP、InAs、InSb、GaAlN、InGaN、InAlGaN及其混合物。
此外,尽管p型和n型层可以不用p型和n型掺杂剂进行掺杂,但是它们优选地用掺杂剂掺杂。
而且,有源层可以是单量子阱或者多量子阱(MQW)结构。
处了上述p型层、有源层和n型层之外,LED可以包括其他缓冲层。
通过调整III-V族化合物的组分,能够自由地制作具有长波长到短波长的LED。因此,本发明不限于具有460nm的波长的蓝色氮基LED,而是可以应用于所有的LED。
绝缘膜形成在布置在LED的最上层上的n-欧姆接触金属层(713)和位于LED之外的n型导电盘(715)之间的连接路径上,并且用于将n-欧姆接触金属层(713)电气地连接到n型导电盘(715)的互连部分形成在绝缘膜上。
该对导电盘(715,716)电气地连接到引线框架,该引线框架继而连接到外部电源。
上述构成的发光器件封装能够根据下面将描述的原理来工作。
也就是说,当通过连接到外部电源的引线(709)在该对导电盘(715,716)之间施加特定电压时,通过n型导电盘(715)、互连部分(717)、n型欧姆接触金属层(713)和n型层来连接阴极,并通过p型导电盘(716)、p型欧姆接触金属层(712)和p型层来连接阳极,从而电流能够流动。
因此,在电子和空穴在有源层中复合的同时,发射与有源层的带隙或者能级差相对应的光。
同时,将参考图17和18a到18d来描述根据本发明的LED中的互连部分(717)和连接于此的连接部分,例如n-欧姆接触金属层(713)、n型导电盘(715)和p型导电盘(716)的布置。
图17是具有存在于其上的引线接合部分(722)的现有LED的平面图。
可以看出,如上所述存在下述问题,即由于存在于LED上的引线接合部分而使垂直发光面积被部分地隐蔽。
相反,图18a到18d是示出了根据本发明的第三实施例导电盘和LED的表面的情况,优选地,导电盘和形成在LED上的欧姆接触金属层(713)通过互连部分(717)彼此电气地连接。
实际上,由于在LED外部存在导电盘,能够使垂直发光面积最大化,并且还能够期望对互连部分的数量和位置等的控制使得制造工艺简单,提高光提取效率等。将对其进行如下描述。
图18a是发光器件的平面图,示出了根据本发明的第三实施例导电盘位于LED外部的情况。该图示出了如下情况,其中欧姆接触金属被淀积为n型层(705)上的彼此不连接的两个图案,透明绝缘膜(719)形成在用于使欧姆接触金属和导电盘彼此连接的互连部分(717)的连接路径上,并且互连部分(717)被放置在各图案的欧姆接触金属的相对侧。
在此,在图18a中,连接到互连部分(717)的导电盘是n型导电盘(715),图18a中的参考标号“710”表示衬底,并且参考标号716表示p型导电盘。
此时,引线(709)的宽度是大约25μm。如果在引线接合中产生的焊球的直径是大约100μm,则产生焊球的导电盘,例如n型盘(715)应该具有至少100μm×100μm的大小。
如果如现有技术中那样,在LED的顶部存在引线接合部分,则至少100μm×100μm的面积遮挡了垂直光发射。相反,由于在使用根据本发明的互连部分(717)的LED中消耗很小的面积,所以减少了遮光面积。
图18b示出了本发明的修改例,并且是示出了如下情况的平面图,其中欧姆接触金属层被淀积成n型层(705)上的彼此不连接的两个图案,透明绝缘膜(719)形成在用于使欧姆接触金属和导电盘彼此连接的互连部分(717)的连接路径上,并且互连部分(717)被放置在各图案的欧姆接触金属的一侧。
如果导电盘如上所述位于一侧而不是相对侧,则在排列导电盘和单元芯片的工艺中能够大大减小空间裕度,由此有助于操作。
此外,如果使用一个互连部分(717),则在n-欧姆接触金属(713)的电阻大的情况下,光会由于电压降而不均匀地分布。相反,使用多个互连部分(717)能够表现出防止光的非均匀分布的优点。图18c示出了本发明的另一个修改例,并且是示出了如下情况的顶视图,其中欧姆接触金属层由n型层(705)上的一个图案形成,并且形成欧姆接触金属层和仅一个互连部分(717)。
在LED的上部面积小的情况下,理想的是通过减少互连部分(717)的数量来减少被隐蔽的面积。因而,应该通过淀积具有足够大的厚度的n-欧姆接触金属(713)来驱动器件。
为此,应该形成n-欧姆接触金属层(713)以定义单元。
当金属自身的电阻小的时候,电压降小,从而能够以理想的电流来驱动器件。因而,n-欧姆接触金属层(713)应该以足够大的厚度来淀积。
但是,由于高性能LED具有较大的上部面积,所以即使n-欧姆接触金属层(713)被淀积为具有较大厚度,但是在仅使用一个互连部分(717)来驱动LED中,也存在对防止电压降的限制。
因此,优选的是形成两个和多个互连部分(717),并且排列互连部分(717)和n-欧姆接触金属层(713)使得上部面积被隐蔽得尽可能小。
图18d示出了再一个实施例,并且是示出了如下情况的平面图,其中在淀积欧姆接触金属之前,在用于连接欧姆接触金属层的互连部分和导电盘之间的连接路径上形成透明绝缘膜(719),并且互连部分(717)和欧姆接触金属层同时形成。如果互连部分(717)和欧姆接触金属层以此方式同时形成,则工艺步骤被简化,这导致了降低成本的优点。
在此,欧姆接触金属层是指图18d中的n-欧姆接触金属层(713)。
根据本发明的第三实施例的发光器件封装对制造方法、输出方法和发射光的波长范围没有限制。
因而,尽管本发明的发光器件封装可以根据各种方法来制造,但是用于制造根据本发明的第三实施例的发光器件封装的方法可以包括如下步骤:(a)在衬底上形成至少一个导电盘;(b)将制作的LED接合到衬底上;以及(c)形成至少一个导电互连部分,用于将LED的一面或者两面电气地连接到导电盘。
1)首先将至少一个,优选的是两个或者更多导电焊盘接合或者淀积在诸如基座的衬底上的适当选择的位置。
2)在诸如蓝宝石衬底的第一衬底上层叠有n型层、有源层和p型层的LED被接合到第二衬底上。
此时,在低输出LED的情况下,当LED部分的层叠顺序保持在第一衬底和第二衬底相邻的状态中时,进行接合。
此外,在高输出或者激光剥离型LED器件的情况中,在LED部分被倒转的状态中,进行接合,即LED部分的表面被接合到第二基板的前表面。
而且,在低输出LED器件的情况中,在LED部分生长在第一衬底,即蓝宝石衬底的状态中接合LED部分。在激光剥离型LED器件的情况中,生长在蓝宝石衬底上的LED部分被以倒转的顺序接合,并且然后借助于激光照射来分离蓝宝石衬底。
因而,蓝宝石衬底不存在于最终的LED器件中。
关于将LED接合到第二衬底时可用的物质,该物质应该将电流提供到LED并且容易地散失从LED产生的热量。因而,可以没有限制地使用能够在300℃或更低的低温度下容易地接合的物质。其非限制性例子包括AuSn、AgSn、PbSn、Sn、银浆等。
3)为了电气地连接导电盘和欧姆接触金属层,其中欧姆接触金属层形成在LED的一面或者两面上、优选的是位于第二衬底上的相同平面中的LED的表面上,借助于薄膜淀积构图来形成由导电金属制成的至少一个互连部分。
为了参考,正确的是在形成互连部分之前,在与互连部分相同的连接路径上形成透明绝缘膜,并且使绝缘膜的宽度等于或者大于互连部分的宽度。
此时,可以在LED的表面上形成凸凹部分,从而通过增加全反射角,大量的光能够从其逸出。
此外,在欧姆接触金属淀积在LED的表面上的情况中,可以如图18a到18d所示形成一个或者两个或者更多分立的图案。
而且,欧姆接触金属不仅可以使用光刻工艺来实现,而且也可以使用遮光板来实现,并且可以根据引线的宽度来适当地选择这些实现技术。
在根据本发明的第三实施例的具有至少一个互连部分的发光器件封装中,可以依次执行如下步骤或反之亦然:执行用于将导电盘连接到例如引线框架的外部电源的引线接合,并且然后只涂覆磷光体或者涂覆磷光体和在其中混合的成型材料的混合物。
此外,在执行这些步骤之后,接合到第二衬底的LED可以被分离成单元芯片,或者被分离成单元芯片的LED可以被接合到第二衬底。
该单元芯片分离步骤不限于前面所述,而是可以在考虑使用者的目的或者制造工艺的容易度的情况下来适当地设置。
同时,用于制造根据本发明的第三实施例使用互连部分的发光器件封装的方法可以包括激光剥离(LLO)方法。
作为其例子,该方法可以包括如下步骤:(a)在生长在第一衬底上的LED的p型层上淀积p-欧姆接触金属;(b)处理第一衬底的后表面;(c)将其上已经生长了LED的第一衬底分离成单元芯片;(d)将通过分离第一衬底而获得的每一个单元芯片的p-欧姆接触金属层的表面接合到形成在第二衬底上的两个或者更多导电盘的第一导电盘;(e)将激光照射到接合于第二衬底的每一个单元芯片的衬底表面上,以去除第一衬底;(f)在第一衬底被去除的情况下,在暴露出的LED的n型层上淀积n-欧姆接触金属;(g)在用于连接n-欧姆接触金属的表面和位于第二衬底上的第二导电盘的路径上形成绝缘膜,并且形成用于连接n-欧姆接触金属的表面和第二导电盘的至少一个导电互连部分;以及(h)将第一和第二导电盘的每一个引线接合到外部电源,并且涂覆磷光体或者用具有混合在其中的磷光体的成型材料进行处理。
此时,图19a到19d示出了制造激光剥离LED的部分工艺,其中将第一基板,例如蓝宝石基板,完全接合到第二基板,并且然后借助于激光照射来去除蓝宝石基板。各工艺如下。
(1)P型欧姆接触形成(见图19a)
首先清洁晶片,在该晶片中已经在蓝宝石衬底(708)上生长了例如GaN基LED晶体结构的LED。然后,借助于真空淀积,在晶片的上面的p型GaN表面上形成p型欧姆接触金属,并且执行热处理以完成p型欧姆接触金属。
(2)蓝宝石的表面的抛光处理
为了形成使激光易于透过蓝宝石衬底的镜面,对具有大约430μm厚度的蓝宝石衬底的表面进行抛光,使得蓝宝石衬底的厚度为大约80到100μm。
(3)单元芯片形成
在蓝宝石衬底被接合到基座衬底或者从基座衬底分离蓝宝石衬底之前,其通过划片/断裂处理被分离成单元芯片。
(4)基座衬底的接合(见图19b)
在高输出LED的情况下,基座衬底用于增强散热效率。此时,在衬底(710)上淀积绝缘膜(720)以防止短路,并且在绝缘膜(720)上形成导电盘,例如n型导电盘(715)和p型导电盘(716)。
蓝宝石衬底已经被抛光的单元芯片被倒转,使得蓝宝石衬底面向上,并且使用粘结剂将LED的p型欧姆接触金属的表面接合到基座衬底或者其上的p型导电盘。
当单元芯片被接合到衬底(710)时,在考虑到衬底(710)的后续划片工艺的情况下,单元芯片优选地以其间大约几百微米的间隔周期地排列(见图19b)。
(5)激光照射(见图19c)
将激光照射到每个芯片的蓝宝石衬底表面上,以去除蓝宝石衬底。
如果照射激光,则透过蓝宝石衬底的激光束被例如GaN的发光部分吸收,并且在蓝宝石和GaN之间的界面处的GaN被分解。因而,产生了金属镓和氮气,从而蓝宝石衬底能够从LED晶体结构上分离。
(6)n型欧姆接触金属的形成(见图19d)
在去除了蓝宝石衬底的情况下,如果需要,在暴露的n型层、优选的是n-GaN的表面上执行抛光或者干法(湿法)刻蚀工艺,并且然后在其上淀积n型欧姆接触金属(713)。
此时,GaN分解时产生的金属镓存在于暴露的GaN的表面上。
由于表面上的该金属镓层减少了从LED发射的光,所以用盐酸将其去除,并且然后如果需要,通过执行干法(湿法)刻蚀工艺,对未掺杂的GaN层进行刻蚀,以暴露出n+-GaN层。如果需要,可以真空淀积用于n-欧姆接触形成的金属(例如,Ti/Al基金属)。
(7)互连部分的形成
在暴露的n型层和位于导电衬底上的n型导电盘之间、优选地在n-欧姆接触金属层和n型导电盘之间的连接路径上形成透明绝缘膜,其中暴露的n型层是LED的最上层,并且然后使用导电金属,通过淀积的薄膜构图来形成至少一个互连部分。
(8)引线接合和成型材料处理(磷光体涂布)
为了将n型导电盘连接到例如引线框架的外部电源,执行金引线接合。同样,通过引线接合,也将p型导电盘连接到外部电源。
此时,可以借助于薄膜淀积构图来进行n型导电盘至外部电源的连接。
(9)磷光体涂布或者成型材料处理
此后,涂布诸如环氧树脂的成型材料或者具有混合于其中的磷光体的材料,以完成LED封装的制造。如果需要,可以以相反的顺序执行步骤(8)和(9)。
尽管结合高输出LED进行了上述说明,但是本发明也可以应用于低输出LED。
作为制造发光器件封装的方法的例子,其中发光器件封装具有应用于此的这样的低输出LED,该方法可以包括如下步骤:(a)刻蚀生长在第一衬底上的LED,以暴露出LED的n型层,并且在其上淀积n-欧姆接触金属;(b)在位于LED的顶部的p型层上淀积p-欧姆接触金属;(c)处理第一衬底的表面,并且将第一衬底分离成单元芯片;(d)将每一个分离的单元芯片的第一衬底表面接合到形成有导电盘部分的第二衬底上;(e)在连接p-欧姆接触金属的表面和位于第二衬底上的导电盘部分的路径上形成绝缘膜,并且形成将p-欧姆接触金属的表面连接到导电盘部分的至少一个导电互连部分;以及(f)将导电盘部分引线接合到外部电源,并且涂覆磷光体或者执行具有混合于其中的磷光体的成型材料处理。
此时,可以以适当地改变的顺序来执行将第一衬底分离成单元芯片的步骤,以促进制造工艺的容易度和工艺的简化。
用于制造根据本发明的第三实施例的发光器件封装的方法仅是优选的制造例子。因此,本发明不限于此。
本发明的发光器件包括本领域中已知的典型LED,例如,蓝色GaN基LED,以及能够发射所有波长的光的其它发光器件。优选地,发光器件是需要进行磷光体涂覆的白色LED器件。
此外,本发明能够被应用于所有LED器件,包括低输出型LED器件、高输出倒装型LED器件以及通过激光剥离技术或其它技术制造的LED器件。
而且,本发明提供包括具有上述结构的LED器件并且根据上述方法来制造的发光装置。
该发光装置包括具有LED器件的所有发光装置,诸如照明装置、指示器、杀菌灯和显示器。
图20是示出了引线焊盘的面积的占据比随芯片面积的变化的图。该图示出了当引线焊盘位于LED的顶部上时,垂直发射光的遮挡量的计算结果。
在图20中,由于当直接在LED的顶部上执行引线接合时遮挡垂直发射光的引线的面积和在使用互连部分的结构的情况中互连部分的遮挡面积之间的差异很小,所以不考虑这两个因素的差异。
引线焊盘(导电盘)的数量从1变化到10,并且考虑如下条件,其中盘与整个面积的面积比小于3%,并且芯片具有1×1mm2或更多的面积,这通常应用于高输出LED。
在1×1mm2芯片中,如果盘的数量是3或者更少,则满足小于3%的面积比。如果盘的数量是4或者更多,则面积比变为3%或更多。
实际上,在1×1mm2芯片中,两个焊盘允许在图18a所示的欧姆接触金属的布置中充分地执行电流驱动,并且用三个或者更少的焊盘能够满足小于3%的面积比的条件。因而,能够用两个或者三个焊盘来驱动器件。
但是,如果芯片的面积是4mm2或者更大,则即使焊盘数量是10,焊盘占据的面积比也小于3%。因此,遮挡垂直发射光的效果不大。如果需要小于3%的面积比,则根据图20适当地调整要形成的焊盘的数量。
如上所述,在根据本发明的第三实施例的发光器件封装中,用于引线接合的导电盘位于LED之外,并且LED的一面或者两面电气地连接到导电盘,这与对位于LED的顶部上的欧姆接触金属直接进行引线接合的现有技术相反。
如上所述,在本发明的第三实施例中,这种连接结构被称作“互连部分”,并且如第一和第二实施例中那样是一种导电线。
从根据本发明的第三实施例的发光器件的上述结构特征而获得的优点如下:
1)现有LED被制作成具有如下结构,其中通过对存在于LED的顶部上的欧姆接触金属层直接执行引线接合,使引线接合部分存在于图3a和3b所示的LED的顶部上。
由于以此方式存在于LED的顶部上的引线接合部分,所以难以执行以小的厚度均匀涂布荧光体的后续操作,并且由于环氧树脂或者硅的表面张力而使磷光体形成为球形,从而通过磷光体的光的传播距离存在差异。因而,被磷光体吸收的光的量发生变化,这导致了颜色的不均匀和光输出的减少。
此外,通过以图3b所示的薄膜形式涂布磷光体,可以减少磷光体的吸收的差异。但是,由于引线焊盘的位置基本上不变化而是位于LED的顶部上,所以应用磷光体器具仍是困难的,并且涂布所需的成本和工艺的难度增加。
相反,由于在本发明中引线接合部分自身的位置基本上移动到LED部分之外,所以能够将磷光体涂覆为LED部分的顶部上的薄膜,并且因此可以使磷光体中的光损耗最小化。
2)此外,由于从LED的表面去除了引线接合引起的三维障碍,所以借助于诸如丝网印刷的方法,荧光体能够被同时涂覆到规则地排列在衬底上的各单元芯片。因而,通过降低制造成本和批量生产能够提高经济效益。
3)而且,在第三实施例中,能够减少吸收垂直发射光的面积,以基本上提高发光二极管的光提取效率。
此外,本发明中的第三实施例中的互连部分起到用于电气连接的引线的作用,并且优选地具有借助于构图而淀积的薄膜的形状。如果形成互连部分的材料是导电材料,则其具体例子包括但不限于:Ag、Cu、Au、Al、Ti、Ni、Cr、Rh、Ir、Mo、W、Co、Zn、Cd、Ru、In、Os、Fe、Sn混合物(合金)。
互连部分是存在于LED内的电气互连线的一部分。互连部分的一端连接到位于LED之外的导电盘,其另一端连接到LED的一面或者两面,优选地是LED的顶部。
此外,连接到本发明的第三实施例中的互连部分的导电盘可以通过引线连接到外部电源,例如,引线框架。此外,通过与互连部分相似的特征从导电盘到外部电源的连接,即淀积薄膜的构图特征而不是引线,也落在本发明的范围内。
而且,导电盘可以存在于LED之外,例如,在接合了LED的相同基板上。如果需要,优选地存在两个或者更多导电盘。用于形成导电盘的材料不限于特定材料,而是可以是任何材料,只要其具有导电性。导电盘优选地由Au、Ag、Cu、Al、Cr、Ti、Ni、In、Pt或其混合物制成。
而且,导电盘所在的衬底可以具有导电性,并且通过形成在衬底上的绝缘膜使导电盘与导电衬底电气绝缘。
LED的一面可以通过前述互连部分电气地连接到导电盘,接合到衬底的LED的另一面可以电气地连接到外部电源。此时,LED的另一面可以通过与LED的底部相邻的另一导电盘电气地连接到引线,并继而连接到外部电源。
在LED的表面和导电盘通过互连部分彼此连接的连接路径上,应该形成绝缘膜,由此防止电气短路。在绝缘膜上形成互连部分时,在连接到互连部分的LED的接触部分上不形成绝缘膜是适当的,从而互连部分能够连接到LED。
此外,本发明的第三实施例中的绝缘膜优选地具有透明性,以使通过LED的侧面和顶面发射的光的吸收最小化。对于绝缘膜的可用组分,对其没有限制,只要该组分具有非导电性和透明性。例如,组分包括SiO2、SiNx等。
而且,尽管对于绝缘膜和互连部分的宽度没有特别限制,但优选的是,绝缘膜的宽度大于互连部分的宽度,并且互连部分的宽度小于引线的宽度。
优选地,LED的一面或者两面,优选的是通过本发明的第三实施例中的互连部分连接的LED的表面,是当LED被贴装在衬底上时与衬底不相邻的表面。
特别地,LED的表面优选地连接到欧姆接触金属层,以通过电阻减小来提高发光效率。
此时,根据制造LED的方法,例如,制造低/中等输出型LED的方法、制造高输出型LED的方法、激光剥离方法等,欧姆接触金属层可以是n-欧姆接触金属层或者p欧姆接触金属层。此外,欧姆接触金属层可以由一个、或者两个或更多分立图案形成,并且每个图案可以被连接到至少一个互连部分。
本领域中已知的典型金属,例如,Ni、Au、Pt等能够被用于欧姆接触金属层,并且Ag、Al、Cr等金属层可以被附加地用于对光进行反射。如果需要,可以进一步增加金属层以改善接合。
而且,在根据本发明的第三实施例的具有至少一个互连部分的LED中,只由磷光体或者由成型材料和磷光体的混合物制成的层可以形成在互连部分和LED的部分表面或者整个表面上。
此外,磷光体层还可以形成在导电盘的部分或者整个表面上,并且优选地形成在导电盘的部分表面上,以有助于引线接合到外部电源。如果磷光体层形成在导电盘的整个表面上,则可以通过形成孔来执行引线接合。
如上所述,本发明具有的优点在于,发光器件被电气地连接到其它器件而不使用引线接合,由此节省了用于引线接合的空间并且减小了封装的尺寸。
此外,本发明具有的优点在于,减少了由引线接合引起的短路或者断路,这导致提高了封装的可靠性。
而且,存在的优点在于,将光透射材料膜涂覆在其上贴装有发光器件的衬底上,从而不需要能够保护发光器件的其它钝化膜,并且不需要引线接合,从而能够降低制造成本并且能够进行批量生产。
而且,本发明具有的优点在于,通过使用导电互连部分,在发光器件中不存在引线,从而能够容易地且均匀地涂覆磷光体,并且能够减少吸收垂直发射光的面积,从而能够增强器件的光提取。
尽管结合具体实施例详细描述了本发明,但是对于本领域技术人员显然的是,在本发明的技术精神和范围内可以对其进行各种修改和变化。还显然的是,此修改和变化落在由权利要求限定的本发明的范围内。
Claims (24)
1.一种发光器件封装,包括:
具有形成在其上的导电盘的衬底;
发光器件,其贴装在衬底上,并且具有形成在发光器件的顶部和底部中的至少一个上的电极盘;
光透射材料膜,用于包围导电盘和发光器件,同时暴露出导电盘和形成在发光器件的顶部和底部中的至少一个上的电极盘的每一个的一部分;以及
导电线,其沿着光透射材料膜的表面从导电盘的暴露部分形成到发光器件的电极盘的暴露部分。
2.根据权利要求1的发光器件封装,其中衬底是非导电衬底,并且
另一导电盘与所述导电盘分开地形成在非导电衬底的上部区域上。
3.根据权利要求1的发光器件封装,其中衬底是导电衬底,并且
进一步在导电盘和导电衬底之间插入绝缘膜。
4.根据权利要求1的发光器件封装,其中发光器件是发射红色或者红外线的器件。
5.一种发光器件封装,包括:
具有形成在其上的一对导电盘的衬底;
发光器件,其贴装在衬底上,并且具有形成在发光器件的顶部上的一对电极盘;
光透射材料膜,用于包围导电盘和发光器件,同时暴露出该对导电盘的每一个的一部分和该对电极盘的每一个的一部分;以及
一对导电线,其沿着光透射材料膜的表面从该对导电盘的每一个的暴露部分形成到该对电极盘的每一个的暴露部分。
6.根据权利要求5的发光器件封装,其中发光器件是绿色或者蓝色发光器件。
7.根据权利要求1-6的任何一个的发光器件封装,其中光透射材料膜由能够透射光的光敏物质制成。
8.根据权利要求1-6的任何一个的发光器件封装,其中用于对从发光器件发射的光的波长进行转换的磷光体分散在光透射材料膜中。
9.根据权利要求1-6的任何一个的发光器件封装,其中光透射材料膜被形成为与导电盘和发光器件的形状一致。
10.根据权利要求1的发光器件封装,其中光透射材料膜具有平坦的上部并且包围导电盘和发光器件,并且
导电线包括:
导电材料,其填充在一对沟槽中,该对沟槽是通过去除从光透射材料膜的顶部分别到导电盘和发光器件的电极盘的各部分光透射材料膜而形成的,以及
导电层,其形成在光透射材料膜的顶部上,以使在该对沟槽中填充的导电材料彼此连接。
11.根据权利要求1的发光器件封装,其中光透射材料膜形成在位于从导电盘到电极盘的最短距离的区域上。
12.根据权利要求1-6的任何一个的发光器件封装,其中光透射材料膜部分地仅形成在发光器件的区域上,并且发光器件封装还具有用于包围光透射材料膜和发光器件的磷光体膜。
13.一种发光器件封装,包括:
发光器件;
导电盘,其位于发光器件外部并且电气地连接到外部电源;以及
至少一个互连部分,用于将发光器件的一面或者两面连接到导电盘。
14.根据权利要求13的发光器件封装,其中借助于薄膜淀积构图来形成互连部分。
15.根据权利要求13或14的发光器件封装,其中互连部分由从Ag、Cu、Au、Al、Ti、Ni、Cr、Rh、Ir、Mo、W、Co、Zn、Cd、Ru、In、Os、Fe和Sn构成的组中选择的至少一种金属制成。
16.根据权利要求13或14的发光器件封装,其中在发光二极管部分的表面和导电盘部分通过互连部分连接的连接路径上形成绝缘膜,互连部分形成在绝缘膜上,并且连接到互连部分的发光二极管部分的接触部分被电气地连接。
17.用于制造发光器件封装的方法,包括如下步骤:
将具有形成在发光器件的顶部和底部中的至少一个上的电极盘的发光器件贴装在具有形成在其上的导电盘的衬底上;
形成用于包围导电盘和发光器件的光透射材料膜,同时暴露出导电盘和形成在发光器件的顶部和底部中的至少一个上的电极盘的每一个的一部分;以及
形成导电线,其沿着光透射材料膜的表面从导电盘的暴露部分形成到发光器件的电极盘的暴露部分。
18.根据权利要求17的方法,其中通过将光透射材料涂覆到导电盘和发光器件上以形成一膜、并且选择性地去除该膜以暴露出导电盘和形成在发光器件的顶部上的电极盘的每一个的一部分,来形成光透射材料膜。
19.根据权利要求18的方法,其中借助于喷涂方法来形成所述膜。
20.根据权利要求17的方法,其中形成光透射材料膜的步骤包括如下步骤:
形成具有平坦的上部并且包围导电盘和发光器件的平坦膜;
通过去除从平坦膜的顶部分别到导电盘和发光器件的电极盘的各部分平坦膜来形成一对沟槽;以及
用导电材料填充该对沟槽,并且形成使填充在各沟槽中的导电材料彼此连接的导电层。
21.一种制造发光器件封装的方法,包括:
将形成有一对电极盘的发光器件接合在具有形成在其上的一对导电盘的衬底上;
形成用于包围导电盘和发光器件的光透射材料膜,同时暴露出该对导电盘的每一个的一部分和该对电极盘的每一个的一部分;以及
形成一对导电线,其沿着光透射材料膜的表面从该对导电盘的每一个的暴露部分形成到该对电极盘的每一个的暴露部分。
22.根据权利要求17或21的方法,其中光透射材料膜由能够透射光的光敏物质制成。
23.根据权利要求17的方法,其中用于对从发光器件发射的光的波长进行转换的磷光体分散在光透射材料膜中。
24.据权利要求17的方法,其中通过执行剥离工艺或者硬掩模工艺来形成导电线。
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EP1724848B1 (en) | 2018-08-15 |
EP1724848A2 (en) | 2006-11-22 |
KR20060118840A (ko) | 2006-11-24 |
US20060261292A1 (en) | 2006-11-23 |
US7683539B2 (en) | 2010-03-23 |
EP1724848A3 (en) | 2012-06-27 |
KR101047683B1 (ko) | 2011-07-08 |
JP2006324667A (ja) | 2006-11-30 |
JP4664861B2 (ja) | 2011-04-06 |
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