CN1874957A - 具有未释放的薄膜组件的mems装置 - Google Patents

具有未释放的薄膜组件的mems装置 Download PDF

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CN1874957A
CN1874957A CNA2004800318273A CN200480031827A CN1874957A CN 1874957 A CN1874957 A CN 1874957A CN A2004800318273 A CNA2004800318273 A CN A2004800318273A CN 200480031827 A CN200480031827 A CN 200480031827A CN 1874957 A CN1874957 A CN 1874957A
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mems devices
mechanical membrane
sacrifice layer
mems
release
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马克·W·迈尔斯
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Qualcomm MEMS Technologies Inc
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IDC LLC
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00896—Temporary protection during separation into individual elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes

Abstract

在一实施例中，本发明提供一种MEMS装置。所述MEMS装置包含：复数个功能性组件，所述功能性组件包括至少一个可移动组件；和一牺牲组件，以至少减少运送所述微机电系统装置期间所述可移动组件的移动，其中可在运送后去除所述牺牲组件。

Description

具有未释放的薄膜组件的MEMS装置
技术领域
本发明一般涉及微机电系统(MEMS)装置的制造过程，且更确切地说，本发明涉及干涉式调制器(iMoD)的制造。
背景技术
干涉式调制器是一种MEMS(微机电)系统装置，所述MEMS系统装置描述并存档于包括美国专利案第5,835,255号、第5,986,796号、第6,040,937号、第6,055,090号和待决的美国专利申请案第09/966,843号、第09/974,544号、第10/082,397号、第10/084,893号和第10/078,282号的多个专利中，所述专利均以引用的方式并入本文中。
制造MEMS装置的一个过程称为“表面微机械加工”，且包含一系列沉积和蚀刻步骤，重复所述步骤直到最后一个步骤或释放步骤。此过程通常可以某种原材料开始，其中所述原材料可为膜或预先沉积的薄膜前驱体的形式。所述前驱体可代表可在专用设施下大量制造的可界定组件。此组件的更详细描述提供于专利申请案第10/606,001号中，该案以引用的方式并入本文中。
表面微机械加工包括类似单片半导体的制造过程。更确切地说，表面微机械加工包含使用多种技术组合膜沉积、光刻和蚀刻的一系列步骤。前驱体膜可用作所述系列步骤的起始点，最终形成具有可移动的机械结构的MEMS装置。在2002年2月12日申请的专利申请案第10/074,562号描述有关此过程的详细内容，且该案以引用的方式并入本文中。
在MEMS装置的运送过程中，机械结构可能会移动，且可能导致损坏MEMS装置。
发明内容
在一实施例中，本发明提供一种制造微机电系统装置的方法。所述方法包含制造微机电系统装置的一牺牲层和一机械膜。所述方法进一步包含抑制具有牺牲层的机械膜的至少一些移动。所述方法进一步包含至少运输微机电系统装置的牺牲层和机械膜。在另一实施例中，本发明提供一种微机电系统装置。所述装置包含至少一个未释放的机械膜。所述装置进一步包含一牺牲组件，其经配置以在微机电系统装置的运输期间抑制未释放的机械膜的至少一些移动。所述未释放的机械膜经配置以在去除牺牲组件后可移动。
附图说明
图1显示现有技术中所说明的完全集成式MEMS处理设施的方框图。
图2显示合并前驱体膜沉积、结构处理和后端处理的完全集成式MEMS处理设施的方框图。
图3显示合并结构处理和后端处理的非集成式MEMS处理设施的方框图。
图4显示制造至准备释放时的MEMS装置。
图5显示已释放的MEMS装置。
具体实施方式
在本发明实施例的以下详细描述中阐述了许多特定细节，例如特定材料、机器和方法的实例，以便彻底理解本发明。然而，所属领域的技术人员将显而易见，不必采用这些特定细节来实践本发明。在其它情况下，为了避免不必要地遮掩本发明，不再详细描述众所周知的材料、机器和方法。
概括地，根据本发明的一实施例，制造-包括可移动组件的MEMS装置，且使用一牺牲材料来抑制所述可移动组件的移动，使得至少降低运送期间对可移动组件的损坏。在一实施例中，在MEMS装置的制造期间沉积所述牺牲材料，且在运送后的释放步骤期间去除所述牺牲材料。可通过化学或相关蚀刻处理去除所述牺牲材料，且导致可移动组件可自由移动。因此，本发明的实施例揭示制造一待释放但还没释放时的MEMS装置，且提供一种可易于在大容量专用设施中制造的组件。此组件可随后便利地运送到可执行释放步骤和后续处理和封装步骤的另一工厂。本发明的一个优势是：其允许希望制造MEMS装置或在运送后对MEMS装置执行制造后操作的实体可在各自空间内进行操作，并享有较低技术进入壁垒和较少资本支出的益处，这是因为制造MEMS装置且还执行制造后释放和处理步骤的集成设施具有较高技术壁垒且比单独设施需要更多的资本支出。本发明的其它优势可从下文描述中明显看出。
2003年6月24日申请的专利申请案第10/606,001号描述了沉积薄膜的一个集合，其可用作制造iMoD的前驱体材料。2002年2月12日申请的专利申请案第10/074,562号描述了制造干涉式调制器的原型制造顺序或结构处理，其可利用上述的前驱体材料，该案以引用的方式并入本文中。图1表示单个工厂100，其包含两个制造区：102，产生薄膜前驱体材料；和104，执行结构处理以形成最终的MEMS结构。
图2是MEMS制造链的较完整表示。在图2中，集成工厂200包括：区202，用于前驱体处理；区204，用于结构处理；和区206，用于后端处理。后端处理通常指的是建立MEMS组件与外界的连接的过程，其可包括装置封装、互连到外部电子装置和界面(即，驱动器和显示器的触摸屏)、互连且集成到外围组件(诸如，显示器的附加照明装置)以及其它。尽管可在较大的集成工厂内执行所述处理，但通常用不能执行其它活动的专用设施执行上述处理。对于MEMS组件且尤其对于显示器来说，这要求存在一可容易地从界定其的设施(本实例中的结构处理区)转移到执行后端处理的设施的组件。
图3说明这个思想和其概念上的益处。在图3中，参考数字300表示仅对从另一工厂供应的前驱体膜执行结构处理的工厂。当然，应注意的是，如果经济上或其它因素许可，所述工厂可既执行前驱体处理又执行结构处理。在任一情况下，可通过在单个工厂300内执行结构处理或结构和前驱体处理而实现规模经济。所得组件随后可供应到一个或一个以上后端处埋设施304，以进一步完成最终的MEMS产品。
对于上述应用中所描述的结构和处理来说，结构处理中转移加工产品到后端处理的便利点就在释放步骤前。图4说明一种MEMS装置(iMoD)，其正处于处理顺序中的此点。参看图4，参考数字400表示一衬底，上面已沉积并图案化有光学薄膜402。牺牲膜404已被沉积并图案化并驻留于光学膜402上，且机械膜406驻留且耦合到牺牲膜404和支撑柱408上。
在图5中，释放步骤已进行。具体来说，已去除牺牲膜，且在其位置处留有一气隙504。支撑柱508仍以机械方式将机械隔膜506耦合到衬底。然而，机械隔膜现在可根据其设计的功能自由移动。所述释放步骤为一化学蚀刻处理的结果，所述化学蚀刻处理利用蚀刻剂将牺牲材料转化成易于以气体或液体形式萃取的副产物。恰好在此时，作为后端处理的一部分，所述装置准备进行封装且互连，但在某些情况下可在释放前实施某些后端处理。
无论如何，出于至少若干原因，在未释放状态下将MEMS组件从一设施转移到另一设施是优选的状态。首先，不管运送容器的制造工艺多好，总存在待运送组件可能暴露于污染物或其它不当微粒或材料的可能性。使组件保持处于未释放状态最小化了所述污染物进入结构的危险性，且使得当组件到达后端设施处时更容易清洁所述组件。从机械角度来看，MEMS组件也更稳定。因此，其更能抵抗环境的极限情况，诸如温度和运输期间可能发生的机械振动。另外，所述组件更适合于存储或堆放，这在某些制造情况或情形下可能是有利的。最后，执行释放步骤所需要的处理工具可相对简单且廉价地获得。设施和相关工作人员尽管精通后端处理所需的工具和技术，但可无需太熟悉在上游结构处理工段中所出现的工具和技术。在未释放阶段进行转移降低了技术和技巧设置壁垒，且加速了制造学习曲线，所述制造学习曲线是这些团队在准备制造iMoD和其它MEMS组件时必须解决的。对于显示领域中的组件来说，其通常涉及具有许多显示体的大衬底，所述组件被称作“准备释放板”。

Claims (17)

1.一种制造一微机电系统装置的方法，其包含：
制造所述微机电系统装置的一牺牲层和一机械膜；
用所述牺牲层抑制所述机械膜的至少一些移动；和
运输所述微机电系统装置的至少所述牺牲层和所述机械膜。
2.根据权利要求1所述的方法，其进一步包含释放所述机械膜以形成一可移动组件。
3.根据权利要求2所述的方法，其中所述释放包含去除所述牺牲层。
4.根据权利要求3所述的方法，其中所述释放包含将所述牺牲层暴露于一蚀刻剂。
5.根据权利要求4所述的方法，其中所述蚀刻剂为一气体。
6.根据权利要求1所述的方法，其中所述制造包含将所述机械膜沉积于所述牺牲层上。
7.根据权利要求1所述的方法，其进一步包含继续制造所述微机电系统装置。
8.根据权利要求7所述的方法，其中继续制造所述微机电系统装置包含后端处理。
9.根据权利要求1所述的方法，其中所述运输包含将所述微机电系统装置的所述牺牲层和所述机械膜移动到一后端处理设施。
10.根据权利要求1所述的方法，其中所述微机电系统装置包含一干涉式调制器。
11.一种通过根据权利要求1所述的方法制造的下涉式调制器。
12.一种微机电系统装置，其包含：
至少一个未释放的机械膜；和
一牺牲组件，其经配置以在所述微机电系统装置的运输期间抑制所述未释放的机械膜的至少一些移动，其中所述未释放的机械膜经配置以在去除所述牺牲组件后可移动。
13.根据权利要求12所述的微机电系统装置，其中在将所述微机电系统装置从一第一制造设施运输到一第二制造设施后去除所述牺牲组件。
14.根据权利要求13所述的微机电系统装置，其中通过将所述牺牲膜暴露于一蚀刻剂而去除所述牺牲膜。
15.根据权利要求14所述的微机电系统装置，其中所述蚀刻剂为一气体。
16.根据权利要求13所述的微机电系统装置，包含一干涉式调制器。
17.根据权利要求12所述的微机电系统装置，其中所述机械膜包含一隔膜。
CNA2004800318273A 2003-11-03 2004-10-28 具有未释放的薄膜组件的mems装置 Pending CN1874957A (zh)

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US10/700,641 2003-11-03
US10/700,641 US7012726B1 (en) 2003-11-03 2003-11-03 MEMS devices with unreleased thin film components

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