CN1881241B - 非接触式数据载体及其制造方法 - Google Patents

非接触式数据载体及其制造方法 Download PDF

Info

Publication number
CN1881241B
CN1881241B CN2006100959451A CN200610095945A CN1881241B CN 1881241 B CN1881241 B CN 1881241B CN 2006100959451 A CN2006100959451 A CN 2006100959451A CN 200610095945 A CN200610095945 A CN 200610095945A CN 1881241 B CN1881241 B CN 1881241B
Authority
CN
China
Prior art keywords
data carrier
antenna circuit
semiconductor element
contactless data
antenna
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006100959451A
Other languages
English (en)
Other versions
CN1881241A (zh
Inventor
八木裕
渡边正直
关口毅
池永知加雄
中村诚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Publication of CN1881241A publication Critical patent/CN1881241A/zh
Application granted granted Critical
Publication of CN1881241B publication Critical patent/CN1881241B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • G06K19/0775—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card arrangements for connecting the integrated circuit to the antenna
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H01F41/042—Printed circuit coils by thin film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49855—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F5/00—Coils
    • H01F5/003—Printed circuit coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F5/00—Coils
    • H01F5/06—Insulation of windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48265—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being a discrete passive component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/17—Nitrogen containing

Abstract

一种非接触式数据载体，包括通过树脂部13密封的半导体元件11和天线电路12。半导体元件11的电极部11a通过导线14连接到天线电路12的两端部12a、12b。因此通过保护层16保护在天线电路面12中与树脂部13相反一侧的面。

Description

非接触式数据载体及其制造方法
本申请是申请号为02145600.3、申请日为2002年12月28日的原案申请的分案申请，该原案的在先申请号为JP01-399278、在先申请日为2001年12月28日。
技术领域
本发明涉及非接触式数据载体及其制造方法。
背景技术
非接触式数据载体具有可存储各种数据的存储器，能够以非接触的方式与外部的读/写器通信。因此用于附加数据载体的货物的自动分类、库存品的管理、商品的防盗、生产、流通管理等各种用途。
这样的非接触式数据载体按如下方式制造。首先通过抗蚀剂图形对在树脂制的基材上层积的铝箔等金属箔进行腐蚀以形成天线图形。接着在基材的背面设置导通部件，通过通孔连接天线图形和导通部件，形成跳线电路。之后配置具有凸点的IC芯片，使之与对应于天线图形的连接端子的位置位置重合，将IC芯片的背面设置的凸点和天线连接端子之间电气连接，为保护目的而对天线图形和IC芯片进行涂覆。
在上述那样的非接触式数据载体中，必须经通孔连接天线图形和导电部件，从而形成跳线电路，并且必须将具有凸点的IC芯片配置成与对应于天线连接端子的位置位置重合，将IC芯片背面的凸点和天线连接端子之间电气连接。而且由于分别制造天线和IC芯片造成高成本。
因此制造成本的花费特别是在2.45GHz(微波)频带使用的非接触式数据载体的制造成本因其结构而不同，为从5美元到100美元以上(据“Micro Stamppresented by Mitsui & Co.，Ltd.http://www.mbd.co.jp/mc/rfid.00.html”)。
发明内容
本发明的目的在于提供用比以往低的成本进行制造而获得的非接触式数据载体及其制造方法。
本发明的非接触式数据载体的特征在于，包括半导体元件，包围半导体元件并具有两端部的线圈状天线电路，连接半导体元件和天线电路的两端部的导线，和用于密封半导体元件、天线电路和导线的密封树脂部。
本发明非接触式数据载体的特征在于，半导体元件被安装在半导体装载部上，该半导体装载部与天线电路配置在大致同一平面上。
本发明非接触式数据载体的特征在于，在天线电路和半导体装载部中，在与密封树脂部相反一侧的面上设置保护层。
本发明非接触式数据载体的制造方法的特征在于，包括步骤：制备导电性基板，在导电性基板的一面上设置具有开口部的第一抗蚀剂图形层，同时在导电性基板的另一面上设置具有开口部的第二抗蚀剂图形层，用保护膜覆盖第一抗蚀剂图形层，同时通过从第二抗蚀剂图形层的开口部腐蚀导电性基板而形成定位孔，将保护膜从第一抗蚀剂图形上去除，从第一抗蚀剂图形层的开口部对导电性基板实施电镀，从而形成具有两端部的天线电路和半导体装载部，将第一抗蚀剂图形层和第二抗蚀剂图形层从导电性基板上去除，将半导体元件固定在半导体装载部上，同时用导线连接半导体元件和天线电路的两端部，用密封树脂部密封半导体元件、天线电路、导线和半导体装载部，以及将导电性基板从半导体装载部和天线电路上除去。
本发明非接触式数据载体的制造方法的特征在于，在设置第一抗蚀剂图形层之前，通过在导电性基板的一个面上进行喷砂处理形成凹凸。
本发明非接触式数据载体的制造方法的特征在于，用氧化液在形成于导电性基板上的凹凸上形成氧化膜。
本发明非接触式数据载体的制造方法的特征在于，在将导电性基板从半导体装载部和天线电路上除去后，在天线电路和半导体装载部中的与树脂部相反一侧的面上设置保护层。
本发明非接触式数据载体的制造方法的特征在于，设置多个半导体元件和与之对应的天线电路，在将导电性基板从半导体装载部和天线电路上除去后，将各个包含着半导体元件和与之对应的天线电路的密封树脂的每一个进行剪切，形成各个单独的部分。
在本发明的非接触式数据载体中，通过通孔连接天线图形和导通部件，形成跳线电路，使在IC芯片上形成的凸点与对应于天线连接端子的位置位置重合，而没有必要在凸点和天线连接端子之间进行电气连接。仅将半导体元件装载、配置在半导体装载部上，用导线将半导体元件连接在天线电路的两端部上就可以，能够以比以往更低的成本进行制造。
而且，本发明的非接触式数据载体按小型结构构成，尽管通信距离短，但在作为标签形成的情况下，通过在作为标签本体的标记、卡片上设置放大天线，可使通信距离延长。
而且，在本发明非接触式数据载体的密封用树脂侧和保护层的两侧中的一侧或两侧上形成设定为适当电感的天线图形，可将这些作为辅助天线或共振电路的一部分使用。在此情况下，通过形成与天线电路之间的通路或通孔等，可使与附加的天线之间的电气连接产生共振。此外，可通过附加没有通路或通孔的天线，同时在天线上形成适当的图形、使密封用树脂或保护层的绝缘层作为电容元件、并使这些电容元件共同参与共振。
附图说明
图1是表示本发明的非接触式数据载体的剖面图。
图2是表示本发明的非接触式数据载体的平面图。
图3是表示比较例的非接触式数据载体的平面图。
图4是表示本发明的第一非接触式数据载体的制造方法的步骤的剖面图。
图5是表示本发明的第二非接触式数据载体的制造方法的步骤的剖面图。
图6是表示接在图5所示步骤之后的本发明的第二非接触式数据载体的制造方法的步骤的剖面图。
图7是基板的侧面图。
图8是基板的侧面图。
具体实施方式
以下参照图面说明本发明的实施例。
图1是表示本发明的非接触式数据载体的侧剖面图，图2是表示非接触式数据载体的平面图。
如图1和图2所示，非接触式数据载体包括半导体元件11，包围半导体元件11并具有两端部12a、12b的线圈状天线电路12，以及连接半导体元件11和天线电路12的两端部12a、12b的导线14。此外半导体元件11配置在设置于与天线电路12大致同一平面上的半导体装载部15上，半导体元件11、天线电路12、半导体装载部15和导线14由树脂部13进行树脂密封。
此外，天线电路12和半导体装载部15中与树脂部13相反一侧的面由用焊料抗蚀剂构成的保护层16保护。
下面在图3中示出了作为比较例的非接触式数据载体。
图3所示的非接触式数据载体的结构为：在塑料等构成的基材1上形成有线圈状的天线图形3，用该天线图形3和与该线圈连接的电容元件形成共振电路，从而可接收、发送一定频率的电波。一般使用125kHz(中波)、13.56MHz、2.45GHz(微波)的频率。
在图3中所示的非接触式数据载体中，天线图形3通过通孔与设置在基材1背面的导通部件4连接，形成跳线电路。此外天线图形3的天线连接端子3c连接到IC芯片2的背面凸点。而且图3所示的例子中电容元件内置于IC芯片中。
如由图1可知的，在本发明的非接触式数据载体中，天线图形通过通孔与导通部件连接从而形成跳线电路，将形成在IC芯片上的凸点配置成与对应于天线连接端子的位置位置重合，因而不必在凸点和天线连接端子之间进行电气连接。只将半导体元件装载配置在半导体装载部上，用导线将半导体元件的电极部连接到天线电路的两端部就可以。因此能够以比作为比较例的非接触式数据载体低的成本进行制造。
下面说明本发明的非接触式数据载体的制造方法。图4示出了本发明非接触式数据载体的第一制造方法。首先如图4所示，准备铜合金、42合金、不锈钢(SUS430、SUS304)等构成的导电性基板21，对形成天线电路的一侧的面进行通过喷砂形成凹凸21a的表面处理。接着用铬酸液(氧化液)对带有凹凸21a的基板21的表面处理面进行氧化，生成氧化膜21b，在其上进行使后续步骤中形成的导电性金属膜和密封用树脂容易从导电性基板去除的去除处理(参照图4(1)和图7)。
然后通过用干膜抗蚀剂在导电性基板21的两面形成感光性抗蚀剂层，进行曝光、显影处理等，在导电性基板21的实施了上述处理(表面处理和去除处理)的一面上设置第一抗蚀剂图形层22，该第一抗蚀剂图形层具有将与非接触式数据载体的天线电路和半导体装载部相当的部分开口的开口部22a。此外，在基板21的另一面上设置第二抗蚀剂图形层23，该第二抗蚀剂图形层23具有将与定位孔相当的部分开口的开口部23a(图4(2))。
干膜抗蚀剂一般由支持抗蚀剂的薄膜基材、抗蚀剂和保护涂覆膜的3层构成。在剥下保护膜使抗蚀剂面曝光的状态下，将抗蚀剂面粘合在导电性基板21的面上，此后通过将薄膜基材去除可在导电性基板21的面上形成感光性抗蚀剂层。
此外，也可以通过丝网印刷、凹版印刷等印刷技术形成第一抗蚀剂图形层22和第二抗蚀剂图形层23。
然后用涤纶薄膜等构成的耐蚀性保护膜24覆盖所述导电性基板21的设置了第一抗蚀剂图形层22的一侧(图4(3))。
此后通过腐蚀从第二抗蚀剂图形层23的开口部23a露出的导电性基板21的区域形成定位孔25(图4(4))。
然后去除保护膜24，使第一抗蚀剂图形层22露出(图4(5))，在从第一抗蚀剂图形层22的开口部22a露出的导电性基板21的表面上实施Au、Ag、Cu、Pd、Ni等的电镀或这些物质的多层电镀26(图4(6))。此后将第一抗蚀剂图形层22浸渍在去除液中进行去除，然后实施洗净处理等，由此获得天线电路12和半导体装载部15(图4(7))。此外，在去除第一抗蚀剂图形层22时将第二抗蚀剂图形层23一起去除。
然后在所形成的半导体装载部15上装载、设置半导体元件11并将其固定(图4(8))。
此后用Au等贵金属的导线14通过导线粘合将半导体元件11的电极部11a和天线电路12的两端部12a、12b连接(图4(9))。此外，导线14的导线粘合可采用只利用加热来压接的热压接粘合机、采用热压接和超声波的超声波压接粘合机，在常温下只利用超声波振动来压接的楔形粘合机等导线粘合装置来进行。
接着采用环氧树脂等密封用树脂密封天线电路12和半导体元件11以及导线14，形成树脂部13(图4(10))。在这一密封过程中，由于在导电性基板21的表面上进行了附加凹凸21a的表面处理，因而形成天线电路12和半导体装载部15的金属膜对导电性基板21来说可靠地接合，可耐密封用树脂成型时的压力，特别是横向的压力，不发生脱离现象。
之后将导电性基板21从由树脂部13密封的天线电路12和半导体元件11上去除(图4(11))。这种去除由于预先进行的表面处理和去除处理，因而对于垂直方向的力来说可容易地进行去除。
接着通过用保护层16覆盖从树脂部13露出的天线电路12的面和半导体装载部15的面，获得本发明的非接触式数据载体(图4(12))。
下面展示所述非接触式数据载体的第一制造方法的实施例的变形例。在该变形例中，使用由铜合金构成的板作为导电性基板21。然后将天线电路12和半导体装载部15形成为由Cu/Pd构成的两层。然后用选择性地溶解铜而不溶解Pd的液体溶解导电性基板21。其他与前述的第一非接触式数据载体的制造方法的实施例相同。
图5、6展示了本发明非接触式数据载体的第二制造方法。首先如图5所示，准备铜合金、42合金、不锈钢(SUS430)等构成的导电性基板31，对形成天线电路的一侧的面进行通过喷砂形成凹凸31a的表面处理。接着用铬酸液对带有凹凸31a的基板31的表面处理面进行氧化，生成氧化膜31b，在其上进行使后续步骤中形成的导电性金属膜和密封用树脂容易从导电性基板去除的去除处理(参照图5(1)和图8)。
然后通过用干膜抗蚀剂在导电性基板31的两面形成感光性抗蚀剂层，进行曝光、显影处理等，在导电性基板31的实施了上述处理(表面处理和去除处理)的一面上设置第一抗蚀剂图形层32，该第一抗蚀剂图形层具有将与多个非接触式数据载体的天线电路和半导体装载部相当的部分开口的开口部32a。此外，在基板31的另一面上设置第二抗蚀剂图形层33，该第二抗蚀剂图形层33具有与定位孔相当的部分开口的开口部33a(图5(2))。
此外，也可以通过丝网印刷、凹版印刷等印刷技术形成第一抗蚀剂图形层32和第二抗蚀剂图形层33。
然后用涤纶薄膜等构成的耐蚀性保护膜34覆盖所述导电性基板的设置了第一抗蚀剂图形层32的一侧(图5(3))。
此后通过腐蚀从第二抗蚀剂图形层33的开口部33a露出的导电性基板31的区域形成定位孔35(图5(4))。
然后去除保护膜34，使第一抗蚀剂图形层32露出(图5(5))，在从第一抗蚀剂图形层32的开口部32a露出的导电性基板31的表面上实施Au、Ag、Cu、Pd、Ni等的电镀或这些物质的多层电镀36(图5(6))。此后将第一抗蚀剂图形层32浸渍在去除液中进行去除，然后实施洗净处理等，由此获得天线电路12和半导体装载部15(图5(7))。此外，在去除第一抗蚀剂图形层32时将第二抗蚀剂图形层33一起去除。
然后在所形成的半导体装载部15上装载、设置多个半导体元件11并将其固定(图6(1))。在此情况下在基板31上设置多个半导体元件11和与各半导体元件对应的天线电路12。
此后用Au等贵金属的导线14连接各半导体元件11的电极部11a和天线电路12的两端部12a、12b(图6(2))。
接着采用环氧树脂等密封用树脂密封天线电路12和半导体元件11以及导线14，形成树脂部13(图6(3))。
之后将导电性基板31从由树脂部13密封的天线电路12和半导体元件11上去除，然后在从树脂部13露出的天线电路12的面和半导体装载部15的面上涂布焊料抗蚀剂等，形成保护层36(图6(4))。
此后将包含半导体元件11和与之对应的天线电路的每一个将树脂部13和保护层36剪切形成单独的部分(图6(5))。
按照上述的第二制造方法，通过添加多面能够有效地制造多个非接触式数据载体。
下面展示所述非接触式数据载体的第二制造方法的实施例的变形例。在该变形例中，使用由铜合金构成的板作为导电性基板31。然后将天线电路12和半导体装载部15形成为由Cu/Pd的两层构成。然后用选择性地溶解铜而不溶解Pd的液体溶解导电性基板31。其他与前述的第一非接触式数据载体的制造方法的实施例相同。
此外，通过进一步将本发明的非接触式数据载体与放大天线贴合可使通信距离增加。
如以上详细说明的，本发明的非接触式数据载体的特征在于半导体元件和天线电路被树脂密封，半导体元件通过导线与天线电路的端部连接。按照本发明，象在以往的非接触式数据载体中那样通过导通部件和通孔连接天线图形，形成跳线电路，将在IC芯片上形成的凸点配置成与对应于天线连接端子的位置位置重合，而没有必要在凸点和天线连接端子之间进行电气连接。因此与以往的非接触式数据载体比较可提供低成本。
按照本发明的非接触式数据载体的制造方法，在基板上形成天线电路和半导体装载部，将半导体元件装载、配置在半导体装载部上，用导线将半导体元件的电极部连接到天线电路的两端部。象在以往的非接触式数据载体中那样通过导通部件和通孔连接天线图形，形成跳线电路，将在IC芯片上形成的凸点配置成与对应于天线连接端子的位置位置重合，而没有必要在凸点和天线连接端子之间进行电气连接，能够以比以往更低的成本进行制造。

Claims (1)

1.一种非接触式数据载体，其特征在于，包括：
半导体元件，
包围半导体元件并具有两端部的线圈状天线电路，
连接半导体元件和线圈状天线电路的两端部的导线，和
在其中密封半导体元件、线圈状天线电路和导线的密封树脂部，
其中，半导体元件被配置在半导体装载部上，该半导体装载部与线圈状天线电路配置在大致同一平面上，
在所述线圈状天线电路和半导体装载部中的与密封树脂部相反一侧的表面上设置保护层，
所述密封树脂部的除了所述保护层一侧的表面之外的全部表面被暴露在外面，
所述密封树脂部覆盖所述线圈状天线电路的所有部分，
用保护层覆盖从所述密封树脂部露出的所述线圈状天线电路的面和所述半导体装载部的面。
CN2006100959451A 2001-12-28 2002-12-28 非接触式数据载体及其制造方法 Expired - Fee Related CN1881241B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP399278/2001 2001-12-28
JP2001399278 2001-12-28

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB021456003A Division CN1295645C (zh) 2001-12-28 2002-12-28 非接触式数据载体的制造方法

Publications (2)

Publication Number Publication Date
CN1881241A CN1881241A (zh) 2006-12-20
CN1881241B true CN1881241B (zh) 2011-06-08

Family

ID=19189456

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2006100959451A Expired - Fee Related CN1881241B (zh) 2001-12-28 2002-12-28 非接触式数据载体及其制造方法
CNB021456003A Expired - Fee Related CN1295645C (zh) 2001-12-28 2002-12-28 非接触式数据载体的制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB021456003A Expired - Fee Related CN1295645C (zh) 2001-12-28 2002-12-28 非接触式数据载体的制造方法

Country Status (4)

Country Link
US (2) US6774470B2 (zh)
EP (1) EP1324261B1 (zh)
CN (2) CN1881241B (zh)
DE (1) DE60229205D1 (zh)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2824939B1 (fr) * 2001-05-16 2003-10-10 A S K Procede de fabrication d'une carte a puce sans contact a l'aide de papier transfert et carte a puce obtenue a partir de ce procede
US7768405B2 (en) * 2003-12-12 2010-08-03 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
US7130234B2 (en) * 2003-12-12 2006-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7405665B2 (en) * 2003-12-19 2008-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, RFID tag and label-like object
US7508305B2 (en) * 2003-12-26 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Packing material, tag, certificate, paper money, and securities
EP1733334B1 (en) 2004-04-09 2011-05-25 Semiconductor Energy Laboratory Co., Ltd. Product management system
JP2005327104A (ja) * 2004-05-14 2005-11-24 Oki Electric Ind Co Ltd 非接触データキャリア、質問器、非接触データキャリアシステム、非接触データキャリアのデータ取得方法、及び、非接触データキャリアのデータ取得用プログラム
DE102004034768B4 (de) * 2004-07-19 2007-11-15 Infineon Technologies Ag Identifikations-Datenträger
US20060109120A1 (en) * 2004-11-19 2006-05-25 Jeremy Burr RFID tag in a substrate
US7312622B2 (en) * 2004-12-15 2007-12-25 Impinj, Inc. Wafer level testing for RFID tags
US7380190B2 (en) * 2004-12-15 2008-05-27 Impinj, Inc. RFID tag with bist circuits
US7307528B2 (en) * 2004-12-15 2007-12-11 Impinj, Inc. RFID tag design with circuitry for wafer level testing
US7528724B2 (en) * 2005-02-28 2009-05-05 Impinj, Inc. On die RFID tag antenna
US7400255B2 (en) 2005-02-28 2008-07-15 Impinj, Inc. Wireless functional testing of RFID tag
WO2006126252A1 (ja) * 2005-05-24 2006-11-30 Fujitsu Limited Ｉｃタグの実装構造および実装用ｉｃチップ
US8030138B1 (en) * 2006-07-10 2011-10-04 National Semiconductor Corporation Methods and systems of packaging integrated circuits
DE102007050102A1 (de) * 2007-10-16 2009-04-23 Smartrac Ip B.V. Verfahren zur Herstellung eines Übertragungsmoduls sowie Übertragungsmodul
US20090114345A1 (en) * 2007-11-07 2009-05-07 Sumitomo Metal Mining Co., Ltd. Method for manufacturing a substrate for mounting a semiconductor element
JP5556072B2 (ja) * 2009-01-07 2014-07-23 ソニー株式会社 半導体装置、その製造方法、ミリ波誘電体内伝送装置
JP5549600B2 (ja) 2009-02-07 2014-07-16 株式会社村田製作所 平板状コイル付きモジュールの製造方法及び平板状コイル付きモジュール
JP5333353B2 (ja) * 2010-06-14 2013-11-06 住友金属鉱山株式会社 半導体素子搭載用基板及びその製造方法
WO2012168752A1 (en) * 2011-06-08 2012-12-13 Microconnections Sas A method for manufacturing a card connector
KR101208241B1 (ko) 2011-07-12 2012-12-04 삼성전기주식회사 반도체 패키지
EP2866298B1 (en) 2012-06-26 2020-05-06 Toyo Seikan Group Holdings, Ltd. Rf tag
CN104290387B (zh) * 2013-07-16 2016-02-24 昆山雅森电子材料科技有限公司 天线板专用彩色化油墨保护膜及其制作方法
US9431363B1 (en) * 2014-11-25 2016-08-30 Automated Assembly Corporation Wire bonded IC components to round wire
WO2016147993A1 (ja) * 2015-03-13 2016-09-22 住友電工プリントサーキット株式会社 平面コイル素子及び平面コイル素子の製造方法
JP6356354B2 (ja) * 2015-07-22 2018-07-11 アルプス電気株式会社 高周波モジュール
US9595501B1 (en) 2015-10-30 2017-03-14 Automated Assembly Corporation Wire bonded electronic devices to round wire
DE102016118802B4 (de) 2016-01-29 2022-12-08 Taiwan Semiconductor Manufacturing Co. Ltd. Drahtloses Ladepaket mit in Spulenmitte integriertem Chip und Herstellungsverfahren dafür
US9761522B2 (en) * 2016-01-29 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Wireless charging package with chip integrated in coil center
JP6609202B2 (ja) * 2016-03-08 2019-11-20 株式会社フジクラ 光電変換装置
US10530175B2 (en) * 2016-08-09 2020-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Hexagonal semiconductor package structure
US10381325B1 (en) 2017-08-04 2019-08-13 Automated Assembly Corporation Guide posts for wire bonding
US10171133B1 (en) 2018-02-20 2019-01-01 Automated Assembly Corporation Transponder arrangement

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1257597A (zh) * 1997-03-25 2000-06-21 格姆普拉斯有限公司 具有用焊接线连接的天线的无触点卡的制造方法
EP1118960A2 (fr) * 1996-01-17 2001-07-25 Gemplus Module électronique sans contact pour carte ou étiquette
EP1154473A2 (en) * 2000-05-09 2001-11-14 Sanyo Electric Co., Ltd. Sheet-like board member and method of manufacturing a semiconductor device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5336931A (en) * 1993-09-03 1994-08-09 Motorola, Inc. Anchoring method for flow formed integrated circuit covers
US5852289A (en) * 1994-09-22 1998-12-22 Rohm Co., Ltd. Non-contact type IC card and method of producing the same
DE19701167A1 (de) * 1997-01-15 1998-07-23 Siemens Ag Chipkarte
JPH10337982A (ja) 1997-06-06 1998-12-22 Denso Corp 非接触式ｉｃカード
JPH1134553A (ja) * 1997-07-18 1999-02-09 Rohm Co Ltd Ｉｃモジュール、およびその製造方法、ならびにこれを備えたｉｃカード
AU4118099A (en) 1997-12-22 1999-07-12 Hitachi Limited Semiconductor device
DE19840220A1 (de) 1998-09-03 2000-04-20 Fraunhofer Ges Forschung Transpondermodul und Verfahren zur Herstellung desselben
US6373447B1 (en) * 1998-12-28 2002-04-16 Kawasaki Steel Corporation On-chip antenna, and systems utilizing same
JP2001188891A (ja) * 2000-01-05 2001-07-10 Shinko Electric Ind Co Ltd 非接触型ｉｃカード
US6634564B2 (en) * 2000-10-24 2003-10-21 Dai Nippon Printing Co., Ltd. Contact/noncontact type data carrier module
JP2002337268A (ja) * 2001-05-21 2002-11-27 Nitto Denko Corp 金属箔積層板及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1118960A2 (fr) * 1996-01-17 2001-07-25 Gemplus Module électronique sans contact pour carte ou étiquette
CN1257597A (zh) * 1997-03-25 2000-06-21 格姆普拉斯有限公司 具有用焊接线连接的天线的无触点卡的制造方法
EP1154473A2 (en) * 2000-05-09 2001-11-14 Sanyo Electric Co., Ltd. Sheet-like board member and method of manufacturing a semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP平10-337982A 1998.12.22

Also Published As

Publication number Publication date
US20040219714A1 (en) 2004-11-04
EP1324261B1 (en) 2008-10-08
US6774470B2 (en) 2004-08-10
CN1295645C (zh) 2007-01-17
CN1432966A (zh) 2003-07-30
US20030122233A1 (en) 2003-07-03
US7018844B2 (en) 2006-03-28
CN1881241A (zh) 2006-12-20
EP1324261A1 (en) 2003-07-02
DE60229205D1 (de) 2008-11-20

Similar Documents

Publication Publication Date Title
CN1881241B (zh) 非接触式数据载体及其制造方法
US6422473B1 (en) Circuit chip mounted card and circuit chip module
US5598032A (en) Hybrid chip card capable of both contact and contact-free operation and having antenna contacts situated in a cavity for an electronic module
KR100770193B1 (ko) Ｉｃ 카드
US5880934A (en) Data carrier having separately provided integrated circuit and induction coil
US20030116790A1 (en) Semiconductor chip and semiconductor device using the semiconductor chip
JP2004509479A (ja) 無線周波数識別装置における複数の部品および複数のアンテナを組み立てる方法
JP2014160515A (ja) プリント集積回路を含む無線デバイス並びにその製造及び使用方法
JPH1013296A (ja) 無線トランスポンダ
JP2000182017A (ja) 接触型非接触型共用ｉｃカードおよびその製造方法
KR20010078385A (ko) 마이크로 트랜스폰더 제조방법
EP1498843B1 (en) Communication medium capable of carrying out contactless communication and method of producing the same
US7312528B2 (en) Semiconductor device having antenna connection electrodes
JPS6347265B2 (zh)
JP3979873B2 (ja) 非接触式データキャリアの製造方法
WO2001003188A1 (en) Integrated circuit attachment process and apparatus
KR20090043077A (ko) 알에프아이디 안테나 및 그 제조방법
JP2012093952A (ja) 非接触及び接触共用ｉｃカード
JP4269450B2 (ja) 複合ｉｃカード用アンテナシートおよびそれを用いた複合ｉｃカード
JP2002207982A (ja) 接触非接触両用ｉｃモジュール及びｉｃカード
KR100530760B1 (ko) 비접촉형 집적회로카드 및 그 제조방법
JP4712373B2 (ja) 電子タグ用インレットの製造方法および電子タグ用インレット
JP4522802B2 (ja) Ｉｃモジュール
JP2001203296A (ja) Ｉｃカード用ｉｃチップ実装基板
JP2005149189A (ja) データキャリアおよびその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110608

Termination date: 20131228