CN1893123A - Light-emitting-diode and method for improving lighting efficiency of same - Google Patents
Light-emitting-diode and method for improving lighting efficiency of same Download PDFInfo
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- CN1893123A CN1893123A CNA2005100805266A CN200510080526A CN1893123A CN 1893123 A CN1893123 A CN 1893123A CN A2005100805266 A CNA2005100805266 A CN A2005100805266A CN 200510080526 A CN200510080526 A CN 200510080526A CN 1893123 A CN1893123 A CN 1893123A
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Abstract
The light emitting diode is composed of semiconductor layer, first electrode, second electrode, and quasi diamond layer. The semiconductor layer includes first type doped semiconductor layer, luminous layer, and second type doped semiconductor layer. The luminous layer is positioned between first type doped semiconductor layer and second type doped semiconductor layer. First electrode is connected to first type doped semiconductor layer electrically. Second electrode is connected to second type doped semiconductor layer electrically. Covering the semiconductor layer, the quasi diamond layer uncovers at least part of the first electrode. Surface of quasi diamond layer exposed to outside is rough surface for example. Or, other passivation layer of possessing rough surface can replace the quasi diamond layer.
Description
Technical field
The present invention relates to a kind of light-emitting component and the method for improving the luminous efficiency of light-emitting component, and (Light Emitting Diode is LED) with the method for improving the luminous efficiency (luminous emissivity) of light-emitting diode to relate in particular to a kind of light-emitting diode.
Background technology
Because the luminous efficiency of light-emitting diode constantly promotes, make light-emitting diode replace fluorescent lamp and incandescent lamp bulb gradually, for example need the Dashboard illumination, traffic signal light of scanner lamp source, Backlight For Liquid Crystal Display Panels or front light-source, the automobile of at a high speed reaction and general lighting device etc. in some field.Light-emitting diode is compared with conventional bulb has absolute advantage, and for example volume is little, life-span length, low-voltage/current drives, be difficult for breaking, do not contain mercury (not having pollution problem) and the good characteristics such as (power savings) of luminous efficiency.
Fig. 1 is the profile of a known light-emitting diode.Please refer to Fig. 1, known light-emitting diode 100 is made of substrate 110, semiconductor layer 120, first conductive layer 130, first electrode 140, second conductive layer 150, second electrode 160 and passivation layer 170.First conductive layer 130 is arranged on the substrate 110.Semiconductor layer 120 is arranged on first conductive layer 130.Semiconductor layer 120 from bottom to top comprises N type doping semiconductor layer 122, luminescent layer 124 and P type doping semiconductor layer 126 successively.First electrode 140 runs through N type doping semiconductor layer 122 and is not arranged at the zone of luminescent layer 124, and is electrically connected to first conductive layer 130.Second conductive layer 150 is arranged on the P type doping semiconductor layer 126.Second electrode 160 is arranged on second conductive layer 150.Passivation layer 170 is covered on the semiconductor layer 120, and is exposed to small part first electrode 140 and part second electrode 160.
Please refer to Fig. 1, when between first electrode 140 of light-emitting diode 100 and second electrode 160, applying electric current, luminescent layer 124 promptly can because of electric current by luminous.Yet because the surface of known passivation layer 170 is a smooth surface, so the light that luminescent layer 124 is sent very easily produces the phenomenon of total reflection on the surface of passivation layer 170, and then reduces the luminous efficiency of light-emitting diode 100.Simultaneously, the material of known passivation layer 170 often adopts silicon dioxide (SiO
2) or silicon nitride (SiN
x), because the light transmittance of these materials is relatively poor, also make the luminous efficiency of light-emitting diode 100 to promote.
In addition, the radiating efficiency of the passivation layer 170 of known materials such as silicon dioxide or silicon nitride is not good, and is that the radiating efficiency of substrate 110 of material is also not good with sapphire (sapphire).So not only the luminous efficiency of light-emitting diode 100 can't promote, and also shorten its useful life because of poor heat radiation.
Therefore, how to improve the luminous efficiency of light-emitting diode, increase the useful life of light-emitting diode simultaneously, become the problem that needs to be resolved hurrily.
Summary of the invention
The object of the present invention is to provide a kind of light-emitting diode, be suitable for improving the luminous efficiency and the thermal diffusivity of light-emitting diode.
A further object of the present invention is to provide a kind of method of improving the luminous efficiency of light-emitting diode, is suitable for improving the luminous efficiency and the thermal diffusivity of light-emitting diode.
The present invention proposes a kind of light-emitting diode, and mainly (Diamond-Like Carbon, DLC) layer constitutes by semiconductor layer, first electrode, second electrode and diamond like carbon for it.Semiconductor layer comprises the first type doping semiconductor layer, luminescent layer and the second type doping semiconductor layer.Wherein, luminescent layer is between the first type doping semiconductor layer and the second type doping semiconductor layer.First electrode is electrically connected on the first type doping semiconductor layer.Second electrode is electrically connected on the second type doping semiconductor layer.The diamond like carbon layer is covered on the semiconductor layer, and is exposed to small part first electrode.
The present invention reintroduces a kind of light-emitting diode, and it mainly is made of semiconductor layer, first electrode, second electrode and passivation layer.Semiconductor layer comprises the first type doping semiconductor layer, luminescent layer and the second type doping semiconductor layer.Wherein, luminescent layer is between the first type doping semiconductor layer and the second type doping semiconductor layer.First electrode is electrically connected on the first type doping semiconductor layer.Second electrode is electrically connected on the second type doping semiconductor layer.Passivation layer is covered on the semiconductor layer, and is exposed to small part first electrode.It is matsurface that passivation layer is exposed to extraneous surface.
The present invention proposes a kind of method of improving the luminous efficiency of light-emitting diode in addition, and it is that light-emitting diode is provided earlier.Light-emitting diode comprises semiconductor layer, first electrode and second electrode at least.Then, form the diamond like carbon layer on light-emitting diode.The diamond like carbon layer is covered on the semiconductor layer, and is exposed to small part first electrode.
The present invention proposes a kind of method of improving the luminous efficiency of light-emitting diode again, and it is that light-emitting diode is provided earlier.Light-emitting diode comprises semiconductor layer, first electrode, second electrode and passivation layer at least.Wherein, passivation layer covers semiconductor layer, and is exposed to small part first electrode.Then, passivation layer is carried out surface coarsening technology.
In sum, in the method for the present invention's light-emitting diode and the luminous efficiency of improving light-emitting diode, owing to adopt the diamond like carbon layer of high cooling efficiency to replace the passivation layer of known silicon dioxide technology, therefore can promote the radiating efficiency of light-emitting diode, and then prolong the life-span of light-emitting diode.In addition, in the method for the present invention's light-emitting diode and the luminous efficiency of improving light-emitting diode, owing to alligatoring is carried out on the surface of passivation layer, or is adopted the preferable diamond like carbon layer of light transmittance, therefore can increase the luminous efficiency of light-emitting diode as passivation layer.
State with other purpose, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and cooperate appended accompanying drawing, be described in detail below.
Description of drawings
Fig. 1 is the profile of a known light-emitting diode.
Fig. 2 is the profile of the light-emitting diode of first embodiment of the invention.
Fig. 3 is the profile of the light-emitting diode of second embodiment of the invention.
The main element description of symbols
100: light-emitting diode
110: substrate
120: semiconductor layer
122:N type doping semiconductor layer
124: luminescent layer
126:P type doping semiconductor layer
130: the first conductive layers
140: the first electrodes
150: the second conductive layers
160: the second electrodes
170: passivation layer
200,300: light-emitting diode
210,310: substrate
220,320: semiconductor layer
222,322: the first type doping semiconductor layers
224,324: luminescent layer
226,326: the second type doping semiconductor layers
230: the first conductive layers
240,340: the first electrodes
250: the second conductive layers
260,360: the second electrodes
270,370: the diamond like carbon layer
280: the first reflection layers
310: semiconductor substrate
370: passivation layer
Embodiment
Fig. 2 is the profile of the light-emitting diode of first embodiment of the invention.Please refer to Fig. 2, the light-emitting diode 200 of first embodiment of the invention mainly is made of semiconductor layer 220, first electrode 240, second electrode 260 and 270 on diamond like carbon layer.Semiconductor layer 220 comprises the first type doping semiconductor layer 222, luminescent layer 224 and the second type doping semiconductor layer 226.Wherein, luminescent layer 224 is between the first type doping semiconductor layer 222 and the second type doping semiconductor layer 226.First electrode 240 is electrically connected on the first type doping semiconductor layer 222.Second electrode 260 is electrically connected on the second type doping semiconductor layer 226.Diamond like carbon layer 270 is covered on the semiconductor layer 220, and is exposed to first electrode 240 of small part.
Please refer to Fig. 2,, therefore can promote the luminous efficiency of light-emitting diode 200 because the light transmittance of diamond like carbon layer 270 is preferable.Simultaneously, diamond like carbon layer 270 is exposed to extraneous surface for example can be matsurface through roughened, more can reduce light produces total reflection in diamond like carbon layer 270 surface probability thus, and then promotes the luminous efficiency of light-emitting diode 200.In addition, because the thermal diffusivity of diamond like carbon layer 270 is preferable, so also can obtain the useful life of light-emitting diode 200 to increase.Certainly, the passivation layer that diamond like carbon layer 270 can also general common material replaces, but still carries out roughened on its surface, so still can be improved aspect the luminous efficiency of light-emitting diode 200.
In the present embodiment, light-emitting diode 200 for example also comprises substrate 210.Substrate 210 for example is common sapphire substrate.Perhaps, substrate 210 for example is preferable silicon substrate of radiating efficiency or metal substrate, to promote the radiating efficiency of light-emitting diode 200.The first type doping semiconductor layer 222 for example is positioned on the substrate 210, and luminescent layer 224 for example is positioned on the subregion of the first type doping semiconductor layer 222, and the second type doping semiconductor layer 226 for example is positioned on the luminescent layer 224.The first type doping semiconductor layer 222 and the second type doping semiconductor layer 226 for example are N type or P type doping semiconductor layer, and both dopant profile are different.
At this moment, first electrode 240 for example is positioned at the first type doping semiconductor layer 222 and is not arranged on the zone of luminescent layer 224, and second electrode 260 for example is positioned on the second type doping semiconductor layer 226, and diamond like carbon layer 270 also is exposed to second electrode 260 of small part.The material of first electrode 240 and second electrode 260 for example is gold, silver, platinum (Pt) or other suitable conductive material.
In addition, light-emitting diode 200 for example also comprises first conductive layer 230 and second conductor layer 250.First conductive layer 230 for example is arranged between the substrate 210 and the first type doping semiconductor layer 222, and first electrode 240 runs through the first type doping semiconductor layer 222 and is electrically connected to first conductive layer 230.Second conductive layer 250 for example is arranged on the second type doping semiconductor layer 226, and second electrode 260 is arranged on second conductive layer 250.Wherein, first conductive layer 230 and second conductor layer 250 all can adopt nontransparent or electrically conducting transparent material, its selection should on light-emitting diode 200 be designed to that end face is luminous, bottom-face luminous or double-side decide.Simultaneously, first conductive layer 230 of electrically conducting transparent material and second conductor layer 250 can improve the luminous efficiency of light-emitting diode 200.The electrically conducting transparent material of first conductive layer 230 and second conductor layer 250 for example be indium tin oxide (Indium Tin Oxide, ITO), indium-zinc oxide (Indium Zinc Oxide, IZO) or other electrically conducting transparent material.
In addition, the surface of the second type doping semiconductor layer 226 for example is through roughening treatment, its objective is the bond strength of strengthening between the second type doping semiconductor layer 226 and second conductor layer 250.Though in Fig. 2 be with second electrode 260 directly the contact second type doping semiconductor layers 226 be example, in fact second electrode 260 can directly or by second conductor layer 250 contact the second type doping semiconductor layer 226.
In addition, if first conductive layer 230 and second conductor layer 250 are all the electrically conducting transparent material, then can for example between the substrate 210 and first conductive layer 230, first reflection layer 280 be set also, or second reflection layer (not marking among the figure) for example also is set on second conductor layer 250, so that light-emitting diode 200 becomes the luminous kenel of single face.Wherein, the material of above-mentioned reflection layer can be the metal of aluminium, silver, platinum or other high reflectance.
Fig. 3 is the profile of the light-emitting diode of second embodiment of the invention.Please refer to Fig. 3, the light-emitting diode 300 of second embodiment of the invention mainly is made of semiconductor layer 320, first electrode 340, second electrode 360 and 370 on diamond like carbon layer.Wherein, each material layer of light-emitting diode 300 is all similar to each material layer of the light-emitting diode 200 of Fig. 2, promptly repeats no more at this.In addition, the surface of the second type doping semiconductor layer 326 for example is through roughening treatment, its objective is the bond strength of strengthening between the second type doping semiconductor layer 326 and the diamond like carbon layer 370.
Please refer to Fig. 3,, therefore can promote the luminous efficiency of light-emitting diode 300 because the light transmittance of diamond like carbon layer 370 is preferable.Simultaneously, diamond like carbon layer 370 is exposed to extraneous surface and for example is matsurface, therefore can reduce light and produce the probability of total reflection in the surface of diamond like carbon layer 370, and then promote the luminous efficiency of light-emitting diode 300.In addition, because the thermal diffusivity of diamond like carbon layer 370 is preferable, so also can obtain the useful life of light-emitting diode 300 to increase.Certainly, the passivation layer that diamond like carbon layer 370 can also general common material replaces, but still carries out roughened on its surface, so still can be improved aspect the luminous efficiency of light-emitting diode 300.
In the present embodiment, light-emitting diode 300 for example also comprises semiconductor substrate 310, and it is for example between second electrode 360 and semiconductor layer 320.When applying electric current between first electrode 340 of light-emitting diode 300 and second electrode 360, electric current still can pass through semiconductor substrate 310 and arrive semiconductor layer 320.
From the above, desire is improved the luminous efficiency of light-emitting diode, can adopt the passivation layer of diamond like carbon material to replace the relatively poor passivation layer of known light transmission.Perhaps, can be after forming passivation layer, the passivation layer that is covered on the semiconductor layer and be exposed to the small part electrode is carried out surface coarsening technology.Certainly, the passivation layer of diamond like carbon material has more significant effect for the luminous efficiency that promotes light-emitting diode after collocation surface coarsening technology.Wherein, surface coarsening technology for example be reactive ion etching (Reactive Ion Etching, RIE) or other surface coarsening mode.When adopting reactive ion etching that passivation layer is carried out roughening treatment, if the material of passivation layer is a diamond-like materials, for example available nitrogen and oxygen are as reacting gas, if the material of passivation layer is a silicon dioxide, then for example available chlorine is as reacting gas.
In sum, in the method for the present invention's light-emitting diode and the luminous efficiency of improving light-emitting diode, owing to adopt the diamond like carbon layer of high cooling efficiency to replace the passivation layer of known silicon dioxide technology, therefore the heat that light-emitting diode produced can be shed efficiently, and then prolong the useful life of light-emitting diode.In addition, in the method for the present invention's light-emitting diode and the luminous efficiency of improving light-emitting diode, because alligatoring is carried out on the surface of passivation layer, or adopt the preferable diamond like carbon layer of light transmittance as passivation layer, therefore can avoid light to produce total reflection phenomenon, increase the luminous efficiency of light-emitting diode simultaneously in the surface of passivation layer.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the invention; when can doing a little change and improvement, so the present invention's protection range attached claim person of defining after looking is as the criterion.
Claims (26)
1. light-emitting diode is characterized in that comprising:
Semiconductor layer comprises the first type doping semiconductor layer, luminescent layer and the second type doping semiconductor layer, and wherein this luminescent layer is between this first type doping semiconductor layer and this second type doping semiconductor layer;
First electrode is electrically connected on the above-mentioned first type doping semiconductor layer;
Second electrode is electrically connected on the above-mentioned second type doping semiconductor layer; And
(Diamond-Like Carbon, DLC) layer is covered on the above-mentioned semiconductor layer, and is exposed to this first electrode of small part diamond like carbon.
2. the light-emitting diode according to claim 1 is characterized in that it is matsurface that above-mentioned diamond like carbon layer is exposed to extraneous surface.
3. the light-emitting diode according to claim 1, it is characterized in that also comprising substrate, the wherein above-mentioned first type doping semiconductor layer is positioned on this substrate, above-mentioned luminescent layer is positioned on the subregion of the above-mentioned first type doping semiconductor layer, the above-mentioned second type doping semiconductor layer is positioned on the above-mentioned luminescent layer, above-mentioned first electrode is not positioned at the above-mentioned first type doping semiconductor layer not and be arranged on the zone of above-mentioned luminescent layer, and above-mentioned second electrode is positioned on the above-mentioned second type doping semiconductor layer, and above-mentioned diamond like carbon layer also is exposed to this second electrode of small part.
4. the light-emitting diode according to claim 3, it is characterized in that also comprising first conductive layer, be arranged between aforesaid substrate and the above-mentioned first type doping semiconductor layer, and this first electrode runs through the above-mentioned first type doping semiconductor layer and is electrically connected to above-mentioned first conductive layer.
5. the light-emitting diode according to claim 4 is characterized in that the material of above-mentioned first conductive layer comprises the electrically conducting transparent material.
6. the light-emitting diode according to claim 4 is characterized in that also comprising first reflection layer, is arranged between aforesaid substrate and above-mentioned first conductive layer.
7. the light-emitting diode according to claim 3 is characterized in that also comprising second conductive layer, be arranged on the above-mentioned second type doping semiconductor layer, and above-mentioned second electrode is arranged on this second conductive layer.
8. the light-emitting diode according to claim 7 is characterized in that the material of above-mentioned second conductive layer comprises the electrically conducting transparent material.
9. the light-emitting diode according to claim 7 is characterized in that also comprising second reflection layer, be arranged on above-mentioned second conductive layer, and above-mentioned second electrode is arranged on this second reflection layer.
10. the light-emitting diode according to claim 3 is characterized in that aforesaid substrate comprises silicon substrate or metal substrate.
11. the light-emitting diode according to claim 1 is characterized in that also comprising semiconductor substrate, between above-mentioned second electrode and above-mentioned semiconductor layer.
12. a light-emitting diode is characterized in that comprising:
Semiconductor layer comprises the first type doping semiconductor layer, luminescent layer and the second type doping semiconductor layer, and wherein this luminescent layer is between this first type doping semiconductor layer and this second type doping semiconductor layer;
First electrode is electrically connected on the above-mentioned first type doping semiconductor layer;
Second electrode is electrically connected on the above-mentioned second type doping semiconductor layer; And
Passivation layer is covered on the above-mentioned semiconductor layer, and is exposed to above-mentioned first electrode of small part, and this passivation layer to be exposed to extraneous surface be matsurface.
13. the light-emitting diode according to claim 12, it is characterized in that also comprising substrate, the wherein above-mentioned first type doping semiconductor layer is positioned on this substrate, above-mentioned luminescent layer is positioned on the subregion of the above-mentioned first type doping semiconductor layer, the above-mentioned second type doping semiconductor layer is positioned on the above-mentioned luminescent layer, above-mentioned first electrode is not positioned at the above-mentioned first type doping semiconductor layer not and be arranged on the zone of above-mentioned luminescent layer, and above-mentioned second electrode is positioned on the above-mentioned second type doping semiconductor layer, and above-mentioned passivation layer also is exposed to this second electrode of small part.
14. the light-emitting diode according to claim 13, it is characterized in that also comprising first conductive layer, be arranged between aforesaid substrate and the above-mentioned first type doping semiconductor layer, and above-mentioned first electrode runs through the above-mentioned first type doping semiconductor layer and is electrically connected to this first conductive layer.
15. the light-emitting diode according to claim 14 is characterized in that the material of above-mentioned first conductive layer comprises the electrically conducting transparent material.
16. the light-emitting diode according to claim 14 is characterized in that also comprising first reflection layer, is arranged between aforesaid substrate and above-mentioned first conductive layer.
17. the light-emitting diode according to claim 13 is characterized in that also comprising second conductive layer, be arranged on the above-mentioned second type doping semiconductor layer, and above-mentioned second electrode is arranged on this second conductive layer.
18. the light-emitting diode according to claim 17 is characterized in that the material of above-mentioned second conductive layer comprises the electrically conducting transparent material.
19. according to the described light-emitting diode of claim 17, it is characterized in that also comprising second reflection layer, be arranged on above-mentioned second conductive layer, and above-mentioned second electrode be arranged on this second reflection layer.
20. the light-emitting diode according to claim 13 is characterized in that aforesaid substrate comprises silicon substrate or metal substrate.
21. the light-emitting diode according to claim 12 is characterized in that also comprising semiconductor substrate, between above-mentioned second electrode and above-mentioned semiconductor layer.
22. a method of improving the luminous efficiency of light-emitting diode is characterized in that comprising:
Light-emitting diode is provided, and this light-emitting diode comprises semiconductor layer, first electrode and second electrode at least; And
Form the diamond like carbon layer on above-mentioned light-emitting diode, such diamond layer is covered on the above-mentioned semiconductor layer, and is exposed to this first electrode of small part.
23., it is characterized in that after forming above-mentioned diamond like carbon layer, also comprising above-mentioned diamond like carbon layer being carried out surface coarsening technology according to the method for the described luminous efficiency of improving light-emitting diode of claim 22.
24., it is characterized in that above-mentioned surface coarsening technology comprises reactive ion etching according to the method for the described luminous efficiency of improving light-emitting diode of claim 23.
25. a method of improving the luminous efficiency of light-emitting diode is characterized in that comprising:
Light-emitting diode is provided, and this light-emitting diode comprises semiconductor layer, first electrode, second electrode and passivation layer at least, and wherein this passivation layer is covered on this semiconductor layer, and is exposed to this first electrode of small part; And
Above-mentioned passivation layer is carried out surface coarsening technology.
26., it is characterized in that above-mentioned surface coarsening technology comprises reactive ion etching according to the method for the described luminous efficiency of improving light-emitting diode of claim 25.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100805266A CN100399592C (en) | 2005-07-04 | 2005-07-04 | Light-emitting-diode and method for improving lighting efficiency of same |
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|---|---|---|---|
| CNB2005100805266A CN100399592C (en) | 2005-07-04 | 2005-07-04 | Light-emitting-diode and method for improving lighting efficiency of same |
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| CN1893123A true CN1893123A (en) | 2007-01-10 |
| CN100399592C CN100399592C (en) | 2008-07-02 |
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Cited By (8)
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| CN102136530A (en) * | 2011-02-12 | 2011-07-27 | 西安神光安瑞光电科技有限公司 | Preparation method for white light LED (light-emitting diode) |
| US8039280B2 (en) | 2007-05-22 | 2011-10-18 | Seoul Opto Device Co., Ltd. | Light emitting diode and method of fabricating the same |
| CN102487115A (en) * | 2010-12-03 | 2012-06-06 | 新世纪光电股份有限公司 | Light emitting diode |
| CN103137819A (en) * | 2011-11-21 | 2013-06-05 | 铼钻科技股份有限公司 | Light-emitting diode with diamond-like carbon layer and manufacturing method and application thereof |
| CN104465974A (en) * | 2014-12-03 | 2015-03-25 | 佛山市国星半导体技术有限公司 | Light-emitting diode and manufacturing method thereof |
| CN105720175A (en) * | 2016-03-23 | 2016-06-29 | 华灿光电(苏州）有限公司 | Package method of light emitting diode |
| CN105742441A (en) * | 2016-03-01 | 2016-07-06 | 山东浪潮华光光电子股份有限公司 | GaN-based LED chip with passivating layer roughening structure and production method therefor |
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| US5693963A (en) * | 1994-09-19 | 1997-12-02 | Kabushiki Kaisha Toshiba | Compound semiconductor device with nitride |
| JP2959503B2 (en) * | 1997-01-10 | 1999-10-06 | サンケン電気株式会社 | Semiconductor light emitting device |
| JP2001102675A (en) * | 1999-09-29 | 2001-04-13 | Toshiba Corp | Semiconductor light-emitting element |
| TW518771B (en) * | 2001-09-13 | 2003-01-21 | United Epitaxy Co Ltd | LED and the manufacturing method thereof |
| CN100345313C (en) * | 2003-07-24 | 2007-10-24 | 元砷光电科技股份有限公司 | LED and manufacturing method thereof |
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| US8039280B2 (en) | 2007-05-22 | 2011-10-18 | Seoul Opto Device Co., Ltd. | Light emitting diode and method of fabricating the same |
| CN102487115A (en) * | 2010-12-03 | 2012-06-06 | 新世纪光电股份有限公司 | Light emitting diode |
| CN102487115B (en) * | 2010-12-03 | 2014-11-19 | 新世纪光电股份有限公司 | Light emitting diode |
| CN102136530A (en) * | 2011-02-12 | 2011-07-27 | 西安神光安瑞光电科技有限公司 | Preparation method for white light LED (light-emitting diode) |
| CN103137819A (en) * | 2011-11-21 | 2013-06-05 | 铼钻科技股份有限公司 | Light-emitting diode with diamond-like carbon layer and manufacturing method and application thereof |
| CN103137819B (en) * | 2011-11-21 | 2016-01-06 | 铼钻科技股份有限公司 | Light-emitting diode with diamond-like carbon layer and manufacturing method and application thereof |
| CN104465974A (en) * | 2014-12-03 | 2015-03-25 | 佛山市国星半导体技术有限公司 | Light-emitting diode and manufacturing method thereof |
| CN104465974B (en) * | 2014-12-03 | 2017-08-04 | 佛山市国星半导体技术有限公司 | A kind of light emitting diode and preparation method thereof |
| CN105742441A (en) * | 2016-03-01 | 2016-07-06 | 山东浪潮华光光电子股份有限公司 | GaN-based LED chip with passivating layer roughening structure and production method therefor |
| CN105720175A (en) * | 2016-03-23 | 2016-06-29 | 华灿光电(苏州）有限公司 | Package method of light emitting diode |
| CN107331736A (en) * | 2016-04-28 | 2017-11-07 | 中国科学院物理研究所 | LED component and its manufacture method having improved properties |
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Effective date of registration: 20120209 Address after: Delaware Patentee after: Gao Zhi invention fund eighty-second limited liability company Address before: Taiwan, Taipei, China Zhongshan North Road three paragraph twenty-two Patentee before: Chunghwa Picture Tubes Ltd. |