CN1906287A - 改进的用于cmp后清洗的碱性化学处理法 - Google Patents

改进的用于cmp后清洗的碱性化学处理法 Download PDF

Info

Publication number
CN1906287A
CN1906287A CNA2005800019365A CN200580001936A CN1906287A CN 1906287 A CN1906287 A CN 1906287A CN A2005800019365 A CNA2005800019365 A CN A2005800019365A CN 200580001936 A CN200580001936 A CN 200580001936A CN 1906287 A CN1906287 A CN 1906287A
Authority
CN
China
Prior art keywords
acid
composition
phenol
mixture
tensio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800019365A
Other languages
English (en)
Inventor
M·L·菲施尔
A·米斯拉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Original Assignee
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude filed Critical LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Publication of CN1906287A publication Critical patent/CN1906287A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2068—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2072—Aldehydes-ketones
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2082—Polycarboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/22—Carbohydrates or derivatives thereof
    • C11D3/221—Mono, di- or trisaccharides or derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/32—Amides; Substituted amides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3427—Organic compounds containing sulfur containing thiol, mercapto or sulfide groups, e.g. thioethers or mercaptales
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3472—Organic compounds containing sulfur additionally containing -COOH groups or derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3481—Organic compounds containing sulfur containing sulfur in a heterocyclic ring, e.g. sultones or sulfolanes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/264—Aldehydes; Ketones; Acetals or ketals
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3263—Amides or imides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3272—Urea, guanidine or derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • C11D2111/14—
    • C11D2111/22—

Abstract

本公开内容讨论半导体器件生产过程中对晶片进行化学机械平面化(CMP)处理后清洗半导体晶片的方法。公开一种用于CMP后清洗含金属、特别是铜互连线的晶片的碱性化学处理法。在不显著刻蚀金属、不在表面留下沉积物或不给晶片带来大量污染物的条件下从晶片表面移出淤浆颗粒、特别是铜或其它金属颗粒，同时还能保护金属不被氧化和腐蚀。此外，存在至少一种强螯合试剂来将金属离子络合到溶液中，促使金属从电介质移出，并避免再沉积到晶片上。

Description

改进的用于CMP后清洗的碱性化学处理法
                    背景技术
电子晶片的生产过程包括在化学机械平面化(CMP)过程之中或之后用液体溶液清洗半导体工件的步骤。“半导体工件”是一种尚未完工的微电子器件，一般是一种硅晶片表面或其中形成有活性区域的硅晶片。用多层金属，一般是已沉积于硅基材上的铜或钨使活性区域连接起来。当用铜作为互连材料时，采用金属镶嵌法，从而使铜沉积到蚀刻于夹层间电介质中的线内，然后用CMP法除去过量铜并进行表面平面化处理，之后是清洗步骤。清洗过程(“CMP后清洗“)的目标是在不会显著刻蚀金属、不在表面留下沉积物或不给半导体工件带来大量杂质的条件下除去半导体工件表面上CMP步骤的残余物。并且，最好是能保护金属表面不受各种机理如化学刻蚀、电化腐蚀或光诱腐蚀所引起的腐蚀。金属表面的腐蚀会导致金属凹陷或金属线变薄。由于铜和阻隔层CMP中通常使用中性至碱性的淤浆液，所以最好有一种能在碱性pH条件下有效的清洗溶液，其中研磨颗粒被高度充电并有效除去。CMP后清洗所用的涮洗机和超声波清洗单元中通常采用碱性化学处理剂。
清洗溶液可包含各种能在清洗过程中发挥不同作业的化学品。清洗溶液必须包含“螯合剂”。“螯合剂”是溶液中能从半导体工件表面除去残留CMP淤浆颗粒、一般为金属颗粒的组分。清洗液也可包含“螯合剂”、“抗腐蚀化合物”和/或“表面活性剂”。“螯合剂”通过将清洗溶液中的金属络合来帮助避免已移出的金属再沉积到半导体工件上。“抗腐蚀化合物”是溶液中能保护金属表面不受诸如清洗溶液腐蚀、氧化、清洗后腐蚀、电蚀或光诱蚀等各种机理侵蚀的组分。“表面活性剂”是清洗溶液中能改进湿润特性和避免形成水印的组分。
美国专利6200947、6194366和6492308公开了清洗溶液化学处理剂的相关内容。但这些参考资料会有下列一和多个缺点。
清洗化学处理剂移出残余金属和将其保留在清洗溶液中的能力是CMP后清洗溶液的很重要特性。能够络合清洗溶液中残余金属的化学品是一些有效的清洗试剂，因为残余金属一经移出后就不会再沉积到半导体工件上。使用不能络合残余金属的清洗溶液的化学处理剂一般很难完成所期望的清洗任务。因此，最好是有一种包括螯合剂的清洗溶液。
一些市售碱性化学处理剂因不含螯合剂，故所期望的从电介质线路中移出残余金属、特别是铜的性能很差。这些化学处理剂一般包括含巯基的脂族醇化合物如2-巯基乙醇或硫甘油和碱性化合物如氢氧化物的溶液。
通过在清洗溶液中提供抗腐蚀化合物来保护半导体工件不发生金属表面腐蚀是很重要的。半导体工件的金属表面、一般是铜形成了半导体晶片的导电通道。由于半导体晶片上的部件尺寸很小，金属线要尽可能薄同时仍能承载所期望的电流。任何表面腐蚀或金属凹陷都会造成金属线变薄(溶解)并导致半导体器件性能很差或不能工作。清洗溶液的防腐蚀能力可通过测量已用溶液清洗的金属的静态腐蚀速率或表面粗糙度(用RMS定量表征，根均方值)来定量表征。高静态腐蚀速率表示金属表面发生溶解。高RMS值表示晶界处金属受侵蚀造成粗糙表面。有效的抗腐蚀化合物能减少金属的腐蚀，这可从清洗步骤后所测定的低静态腐蚀速率和RMS值看出。
抗腐蚀化合物可通过还原金属表面、在金属表面提供保护膜或清除氧气的手段来发挥作用。一些本领域采用的清洗溶液没有提供有效的抗腐蚀剂，因而会产生高静态腐蚀速率和/或高RMS值的问题。
一些市售碱性清洗化学处理剂会因曝露于空气而受影响和/或具有高静态金属腐蚀速率。这些化学处理剂一般包含氢氧化季铵如TMAH、除氧型抗腐蚀剂如没食子酸或抗坏血酸和有机胺如单乙醇胺。由于这些化学处理剂靠除氧剂来防止腐蚀，因此曝露于空气中对这些化学品的性能是有害的。另外，缺少表面保护膜以及化学品对金属的侵蚀会导致高静态腐蚀速率，继而造成凹陷的线路。
清洗半导体表面时的另一常见问题是杂质会沉积于半导体器件的表面。任何沉积的清洗溶液甚至不期望组分的极少量分子都会反过来影响半导体器件的性能。需要漂洗步骤的清洗溶液也会导致杂质沉积于表面。因此，最好使用不会在半导体表面留下任何残余物的清洗化学处理剂。
另外，最好是一步法清洗和保护半导体表面。一些将晶片表面平面化的化学处理法包括清洗步骤，之后再加一个用水或抑制剂溶液漂洗的步骤。漂洗、特别是用水漂洗步骤会导致半导体工件表面留下沉积物，因此而被水所污染。增加第二步还会因加长生产过程、必须处理更多化学品和更多步骤而使过程复杂化和有可能带来更多污染源或其它质量控制问题的因素而带来缺点。显然，很希望有一种能清洗和保护半导体工件表面的方法。
清洗溶液中最好还有一种表面湿润剂。表面湿润剂能有助于表面不再产生因附着于表面的液滴所造成的斑点而使半导体工件免受污染。表面的斑点(又称水印)可使测量光点缺陷的计量仪器饱和，因此隐匿了半导体工件中的缺陷。
出于上述理由，希望提供一种能保护金属不被腐蚀、避免金属表面氧化、有效移出(或除去)颗粒物、从电介质表面除去金属的碱性化学处理剂，其pH接近前面CMP步骤，并且不会污染半导体表面。本发明的化学处理剂利用多种添加剂来提供一种能满足上述所有需求的溶液。
                            概述
本发明涉及含金属、特别是铜的半导体基材化学机械平面化(CMP)处理后所用的清洗化学品。从晶片表面除去淤浆颗粒和有机残余物的刷洗机和超声波清洗单元中常常使用碱性化学处理剂。本发明是一种用来清洗半导体工件，满足保护金属不被腐蚀、避免金属表面氧化、有效移出颗粒物、从电介质表面除去金属的需求的清洗溶液组合物，其pH接近前面CMP步骤，并且不会污染半导体表面。并且金属表面的清洗和保护操作在单一步骤中使用单一溶液来完成。
本发明的清洗溶液在碱性方面与碱性CMP淤浆的pH值相配。基于氧化硅的CMP淤浆在碱性pH区域被稳定化，其中的颗粒呈现高负表面电荷。用碱性pH化学处理剂进行清洗会因颗粒上的电荷和其与带类似电荷表面的相斥力而使颗粒得到有效移出。所存在的螯合剂将金属离子络合入溶液，促使铜从电介质移出并避免金属再沉积到晶片上。清洗溶液还包含能避免铜氧化并使金属表面受清洗剂侵蚀最小化的抗腐蚀剂。另外，化学处理剂可包含能经所存在铜催化的除氧剂来进一步使腐蚀的可能性最小化。可任选加入湿润剂来改进湿润特性和避免形成水印。
清洗溶液的优选方案包括清洗剂、螯合剂和抗腐蚀化合物。
本发明的清洗溶液可通过将CMP淤浆颗粒从半导体工件移出以及清洗电介质表面的残余金属来有效清洁半导体工件表面。清洗溶液的优选方案包括氢氧化铵和/或氢氧化四烷基铵作为清洗剂。
本发明清洗溶液的优选方案包括能有效络合所移出的金属并避免使所移出的金属再沉积到半导体工件表面的螯合剂。优选的螯合剂包括柠檬酸铵、草酸铵、天冬氨酸、苯甲酸、柠檬酸、巯基丙氨酸、乙二胺、甘氨酸、葡糖酸、谷氨酸、组氨酸、羟基胺、异丙醇胺、异丙基羟基胺、马来酸、草酸、水杨酸或酒石酸的一或多种。
清洗溶液的优选方案包括能保护半导体工件的金属不被腐蚀的抗腐蚀化合物。抗腐蚀化合物可以是还原剂、成膜剂和/或除氧剂。半导体工件的金属上形成膜来保护金属表面在清洗步骤之中或之后不被氧化且不受化学、电化学和光诱发侵蚀。通过保护金属表面不受侵蚀、还原表面或除氧的措施，金属保持其所期望的厚度和电载能力。优选的抗腐蚀剂包括乙酰胺酚、氨基酚、苯并三唑、咖啡酸、肉桂酸、巯基丙氨酸、二羟基苯甲酸、葡萄糖、咪唑、巯基噻唑啉、巯基乙醇、巯基丙酸、巯基苯并噻唑、巯基甲基咪唑、甲氧基酚、单宁酸、硫甘油、硫代水杨酸、三唑、香草醛或香草酸的一或多种。
本发明的清洗溶液是碱性的。因为一些CMP过程使用碱性淤浆液，故碱性CMP后清洗化学处理剂很理想。通过使用碱性清洗溶液，可避免因工艺设备中pH值来回变动所带来的问题。
本发明的优选清洗溶液可在同一步骤中清洁半导体工件并保护金属表面不被腐蚀。由于在单一步骤中完成清洁和抗腐蚀操作，则很少有因完全分开的抗腐蚀溶液操作所带来的意外污染的可能性。并且，因不必增加另外的抗腐蚀步骤而节省了宝贵的处理时间。
一些优选的清洗溶液方案包括表面活性剂，又称表面湿润剂。表面活性剂有助于避免表面产生可能是污染源或隐匿半导体工件缺陷的斑点(水印)。表面活性剂可以是非离子型、阴离子型、阳离子型、两性离子型或两性表面活性剂。
                        附图说明
图1是一个置于本发明优选方案中处理的有图案晶片上Cu垫的图像。
图2是一个置于本发明优选方案中处理的有图案晶片上Cu和低k线的图像。
                          说明
本发明是一种用于清洗半导体工件的碱性清洗溶液。清洗溶液组合物包括清洗剂、螯合剂、和抗腐蚀化合物。优选的清洗剂包括氢氧化铵和氢氧化四烷基(甲基、乙基、丙基、丁基等)铵。优选的螯合剂包括柠檬酸铵、草酸铵、天冬氨酸、苯甲酸、柠檬酸、巯基丙氨酸、乙二胺、甘氨酸、葡糖酸、谷氨酸、组氨酸、羟基胺、异丙醇胺、异丙基羟基胺、马来酸、草酸、水杨酸、酒石酸及它们的混合物。优选的抗腐蚀化合物包括乙酰胺酚、氨基酚、苯并三唑、咖啡酸、肉桂酸、巯基丙氨酸、二羟基苯甲酸、葡萄糖、咪唑、巯基噻唑啉、巯基乙醇、巯基丙酸、巯基苯并噻唑、巯基甲基咪唑、甲氧基酚、单宁酸、硫甘油、硫代水杨酸、三唑、香草醛、香草酸和它们的混合物。优选的清洗溶液可包含多于一种抗腐蚀剂的混合物。
一些优选方案包含多于一种螯合剂和/或抗腐蚀化合物的混合物。例如一个优选清洗溶液的抗腐蚀剂包括乙酰胺酚和甲氧基酚的混合物。另一优选清洗溶液的抗腐蚀剂包括乙酰胺酚和香草醛的混合物。还有一个优选清洗溶液的抗腐蚀剂包括甲氧基酚和香草醛的混合物。
一个优选的清洗溶液方案包括氢氧化四甲基铵、乙二胺和乙酰胺酚与香草醛混合物。此方案的一个优选混合物包括浓度2.75wt％的氢氧化四甲基铵、6wt％的乙二胺、0.75wt％的乙酰胺酚和1wt％的香草醛。对此方案而言，在使用前要用去离子(DI)水进行15×至25×稀释。另一优选的清洗溶液包括氢氧化四甲基铵(2.75wt％)、乙二胺(8wt％)和乙酰胺酚(0.5wt％)与甲氧基酚(1.5wt％)混合物。再另一优选的清洗溶液包含氢氧化四甲基胺(2.75wt％)、乙二胺(8wt％)、和甲氧基酚(1.5wt％)与香草醛(0.5wt％)的混合物。
本发明的优选清洗溶液方案具有中性至碱性pH。更优选pH约为10-13。
清洗溶液可按浓缩形式提供，或用水或本领域技术人员已知的其它适当稀释剂进行稀释。
一个优选的清洗溶液方案包括能促使半导体表面更湿润的表面活性剂。优选方案包括但不限于非离子型、阴离子型、阳离子型、两性离子型或两性表面活性剂或它们的混合物。
本领域技术人员可无需过多实验采用常规混合技术来制备本发明的清洗溶液。
                        实施例
参照下列实施例来更详细地说明本发明，只是例示说明的目的而不应当看成是对本发明范围的限定。
实施例1
用电化学阻抗谱(EIS)对本发明的化学品进行试验来测定其较市售碱性CMP后清洗剂的抗腐蚀性。将覆铜晶片浸入化学处理剂并连接电化学电池。测量开路电势与时间的关系来确定晶片置于每种化学处理剂的稳态条件。一旦发现稳态条件，则向每一晶片施加AC电压并获得电阻和电容值，给出腐蚀速率和每种化学品的抗腐蚀性的信息。所测的本发明优选方案的抗腐蚀性为25843欧姆-cm2，所测的市售产品的抗腐蚀性为19226欧姆-cm2。这些结果表明本发明所提供的抗铜腐蚀性比市售碱性CMP后清洗剂要高。高抗腐蚀性对互连线的铜损失最小化以及避免铜线表面形成低导物如氧化物和氢氧化物很重要。
实施例2
在第二个研究中，将有图案Cu/低k和覆铜晶片置于本发明化学品及市售替换品中处理，以便测定每种化学品在腐蚀铜线方面的侵蚀性。对一个有效清洗过程而言，化学处理剂应能有效将铜络合到溶液中，使其移出电介质区域，但又要与抗腐蚀性平衡，避免从铜线中移出过多材料。为研究此性能，将有图案铜晶片置于碱性处理剂稀释液中处理5分钟，然后用原子力显微镜(AFM)进行分析。然后对晶片上的铜区进行扫描来测定因化学处理所造成的粗糙程度。图1示出一个置于本发明优选方案(氢氧化四甲基铵+乙二胺+乙酰胺酚+香草醛)的1∶20稀释液中处理的有图案晶片上铜垫的20×20微米AFM扫描图。化学处理后该区域的RMS粗糙度为1.6nm，而初值为1.0nm。表明化学处理使表面略微变粗糙且铜粒高亮，但没有显著侵蚀铜。此信息结合ICPMS所测的处理过程中溶入溶液的铜，可得到本发明化学处理剂与市售产品的比较情况。
也可用置于碱性CMP后清洗稀释液中处理后的AFM图来研究有图案晶片上的Cu/低k线区域。图2是一个用本发明优选方案(氢氧化四甲基铵+乙二胺+乙酰胺酚+香草醛)清洗的晶片上有交替的铜线(亮区)和低k线(暗区)区域的实例。图2的铜线基本没有被清洗溶液变凹。化学处理剂能够在清洗过程中保护铜线的完整性，移出颗粒物、有机物，和溶解铜残余物，同时不会使铜被侵蚀到产生线凹陷的不利结果。
尽管已参照某些优选方案对本发明进行了很详细的说明，但其它方案也是可行的。例如组合物可实际用于非CMP后清洗的另外过程。此外，半导体工件的清洗操作可采用各种不同清洗液浓度、温度和条件来完成。并且，本发明可用来清洗各种表面，包括但不限于含铜、硅的表面和电介质薄膜。因此，所附权利要求的范围和精神不受本文所包含的优选方案说明的限制。本申请人的发明将覆盖所有属于所附权利要求定义的本发明范围和精神的改进、等价和替代方案。

Claims (36)

1.一种清洗半导体工件的组合物，包括：
a)清洗剂，其中所述清洗剂选自氢氧化铵和氢氧化四烷基铵；
b)螯合剂，其中所述螯合剂选自柠檬酸铵、草酸铵、天冬氨酸、苯甲酸、柠檬酸、巯基丙氨酸、乙二胺、甘氨酸、葡糖酸、谷氨酸、组氨酸、羟基胺、异丙醇胺、异丙基羟基胺、马来酸、草酸、水杨酸、酒石酸及它们的混合物；和
c)抗腐蚀化合物，其中所述抗腐蚀化合物选自乙酰胺酚、氨基酚、苯并三唑、咖啡酸、肉桂酸、巯基丙氨酸、二羟基苯甲酸、葡萄糖、咪唑、巯基噻唑啉、巯基乙醇、巯基丙酸、巯基苯并噻唑、巯基甲基咪唑、甲氧基酚、单宁酸、硫甘油、硫代水杨酸、三唑、香草醛、香草酸和它们的混合物。
2.权利要求1的组合物，其中所述抗腐蚀混合物包括至少两种选自乙酰胺酚、氨基酚、苯并三唑、咖啡酸、肉桂酸、巯基丙氨酸、二羟基苯甲酸、葡萄糖、咪唑、巯基噻唑啉、巯基乙醇、巯基丙酸、巯基苯并噻唑、巯基甲基咪唑、甲氧基酚、单宁酸、硫甘油、硫代水杨酸、三唑、香草醛和香草酸的化学品的混合物。
3.权利要求1的组合物，进一步包括稀释剂。
4.权利要求1的组合物，进一步包括表面活性剂。
5.权利要求4的组合物，其中所述表面活性剂选自非离子型、阴离子型、阳离子型、两性离子型和两性表面活性剂以及它们的混合物。
6.权利要求1的组合物，其中pH值介于约9到13之间。
7.权利要求1的组合物，其中所述清洗剂包括氢氧化四甲基铵。
8.权利要求7的组合物，其中所述螯合剂包括乙二胺。
9.权利要求8的组合物，其中所述抗腐蚀化合物包括乙酰胺酚
10.权利要求9的组合物，其中所述抗腐蚀化合物进一步包括香草醛。
11.权利要求10的组合物，进一步包括稀释剂。
12.权利要求10的组合物，进一步包括表面活性剂。
13.权利要求12的组合物，其中所述表面活性剂选自非离子型、阴离子型、阳离子型、两性离子型和两性表面活性剂以及它们的混合物。
14.权利要求9的组合物，其中所述抗腐蚀化合物进一步包括甲氧基酚。
15.权利要求14的组合物，进一步包括稀释剂。
16.权利要求14的组合物，进一步包括表面活性剂。
17.权利要求16的组合物，其中所述表面活性剂选自非离子型、阴离子型、阳离子型、两性离子型和两性表面活性剂以及它们的混合物。
18.权利要求8的组合物，其中所述抗腐蚀化合物包括甲氧基酚。
19.权利要求18的组合物，其中所述抗腐蚀化合物进一步包括香草醛。
20.权利要求19的组合物，进一步包括稀释剂。
21.权利要求19的组合物，进一步包括表面活性剂。
22.权利要求21的组合物，其中所述表面活性剂选自非离子型、阴离子型、阳离子型、两性离子型和两性表面活性剂以及它们的混合物。
23.一种清洗半导体工件的方法，方法包括如下步骤：
a)提供一个半导体工件，将所述半导体工件与包括下述成分的清洗溶液接触：
i)清洗剂，其中所述清洗剂选自氢氧化铵和氢氧化四烷基铵
ii)螯合剂，其中所述螯合剂选自柠檬酸铵、草酸铵、天冬氨酸、苯甲酸、柠檬酸、巯基丙氨酸、乙二胺、甘氨酸、葡糖酸、谷氨酸、组氨酸、羟基胺、异丙醇胺、异丙基羟基胺、马来酸、草酸、水杨酸、酒石酸及它们的混合物；和
iii)抗腐蚀化合物，其中所述抗腐蚀化合物选自乙酰胺酚、氨基酚、苯并三唑、咖啡酸、肉桂酸、巯基丙氨酸、二羟基苯甲酸、葡萄糖、咪唑、巯基噻唑啉、巯基乙醇、巯基丙酸、巯基苯并噻唑、巯基甲基咪唑、甲氧基酚、单宁酸、硫甘油、硫代水杨酸、三唑、香草醛、香草酸和它们的混合物。
24.权利要求23的方法，其中所述半导体工件包括金属线、阻隔材料和电介质。
25.权利要求24的方法，其中所述金属线包括铜。
26.权利要求25的方法，其中所述阻隔材料包括选自Ta、TaN、Ti、TiN、W和WN的材料。
27.权利要求26的方法，其中所述清洗剂包括氢氧化四甲基铵。
28.权利要求27的方法，其中所述螯合剂包括乙二胺。
29.权利要求28的方法，其中所述抗腐蚀化合物包括乙酰胺酚
30.权利要求29的方法，其中所述抗腐蚀化合物进一步包括甲氧基酚。
31.权利要求29的方法，其中所述抗腐蚀化合物进一步包括香草醛。
32.权利要求28的方法，其中所述抗腐蚀化合物包括甲氧基酚。
33.权利要求32的方法，其中所述抗腐蚀化合物进一步包括香草醛。
34.权利要求23的方法，其中所述清洗溶液进一步包括稀释剂。
35.权利要求23的方法，其中所述清洗溶液进一步包括表面活性剂。
36.权利要求35的方法，其中所述表面活性剂选自非离子型、阴离子型、阳离子型、两性离子型和两性表面活性剂以及它们的混合物。
CNA2005800019365A 2004-02-12 2005-01-12 改进的用于cmp后清洗的碱性化学处理法 Pending CN1906287A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US54427204P 2004-02-12 2004-02-12
US60/544,272 2004-02-12
US10/956,273 US7435712B2 (en) 2004-02-12 2004-10-01 Alkaline chemistry for post-CMP cleaning
US10/956,273 2004-10-01
PCT/IB2005/000081 WO2005085408A1 (en) 2004-02-12 2005-01-12 Improved alkaline chemistry for post-cmp cleaning

Publications (1)

Publication Number Publication Date
CN1906287A true CN1906287A (zh) 2007-01-31

Family

ID=34841165

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800019365A Pending CN1906287A (zh) 2004-02-12 2005-01-12 改进的用于cmp后清洗的碱性化学处理法

Country Status (8)

Country Link
US (1) US7435712B2 (zh)
EP (1) EP1720965B1 (zh)
JP (1) JP4550838B2 (zh)
KR (1) KR101087916B1 (zh)
CN (1) CN1906287A (zh)
AT (1) ATE432974T1 (zh)
DE (1) DE602005014746D1 (zh)
WO (1) WO2005085408A1 (zh)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012009941A1 (zh) * 2010-07-21 2012-01-26 河北工业大学 超大规模集成电路多层铜布线化学机械抛光后的洁净方法
CN101730929B (zh) * 2007-05-08 2012-07-18 朗姆研究公司 清洁cmp后的晶片的热学方法
CN102623327A (zh) * 2011-01-31 2012-08-01 中芯国际集成电路制造(上海)有限公司 一种化学机械研磨方法
CN101807540B (zh) * 2009-02-16 2013-02-13 海力士半导体有限公司 在半导体器件中形成铜布线的方法
CN106854461A (zh) * 2016-12-11 2017-06-16 周益铭 一种高渗透快速注水井除垢剂的制备方法
CN108998267A (zh) * 2018-08-29 2018-12-14 李少伟 一种半导体器件防蚀剂清洗剂及制备方法
CN109988676A (zh) * 2019-04-24 2019-07-09 上海新阳半导体材料股份有限公司 一种清洗液、其制备方法和应用
CN109988675A (zh) * 2019-04-24 2019-07-09 上海新阳半导体材料股份有限公司 长效型化学机械抛光后清洗液、其制备方法和应用
CN112981404A (zh) * 2021-02-05 2021-06-18 四川和晟达电子科技有限公司 一种钛合金蚀刻液组合物及其使用方法

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7435712B2 (en) 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US7498295B2 (en) * 2004-02-12 2009-03-03 Air Liquide Electronics U.S. Lp Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide
US7087564B2 (en) * 2004-03-05 2006-08-08 Air Liquide America, L.P. Acidic chemistry for post-CMP cleaning
EP1778413B1 (de) * 2004-08-03 2016-03-16 Chemetall GmbH Verfahren zum beschichten metallischer oberflächen mit einer korrosionsschützenden beschichtung
US20060116313A1 (en) * 2004-11-30 2006-06-01 Denise Geitz Compositions comprising tannic acid as corrosion inhibitor
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
SG158920A1 (en) * 2005-01-27 2010-02-26 Advanced Tech Materials Compositions for processing of semiconductor substrates
US20090288688A1 (en) * 2005-03-11 2009-11-26 Ron Rulkens Non-corrosive chemical rinse system
US7879782B2 (en) * 2005-10-13 2011-02-01 Air Products And Chemicals, Inc. Aqueous cleaning composition and method for using same
US7534753B2 (en) * 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US20070232511A1 (en) * 2006-03-28 2007-10-04 Matthew Fisher Cleaning solutions including preservative compounds for post CMP cleaning processes
WO2008023214A1 (en) * 2006-08-23 2008-02-28 Freescale Semiconductor, Inc. Rinse formulation for use in the manufacture of an integrated circuit
US8685909B2 (en) * 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US20100081595A1 (en) * 2007-01-22 2010-04-01 Freescale Semiconductor, Inc Liquid cleaning composition and method for cleaning semiconductor devices
US7951717B2 (en) * 2007-03-06 2011-05-31 Kabushiki Kaisha Toshiba Post-CMP treating liquid and manufacturing method of semiconductor device using the same
US8221552B2 (en) * 2007-03-30 2012-07-17 Lam Research Corporation Cleaning of bonded silicon electrodes
US20080286471A1 (en) * 2007-05-18 2008-11-20 Doubleday Marc D Protective gel for an electrical connection
DE102007058829A1 (de) * 2007-12-06 2009-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Textur- und Reinigungsmedium zur Oberflächenbehandlung von Wafern und dessen Verwendung
US8404626B2 (en) * 2007-12-21 2013-03-26 Lam Research Corporation Post-deposition cleaning methods and formulations for substrates with cap layers
US20100062164A1 (en) 2008-09-08 2010-03-11 Lam Research Methods and Solutions for Preventing the Formation of Metal Particulate Defect Matter Upon a Substrate After a Plating Process
CN102197124B (zh) * 2008-10-21 2013-12-18 高级技术材料公司 铜清洁及保护调配物
CN101463295B (zh) * 2008-11-28 2011-08-17 江苏海迅实业集团股份有限公司 半导体工业用清洗剂
US8969275B2 (en) 2009-06-30 2015-03-03 Basf Se Aqueous alkaline cleaning compositions and methods of their use
JP5646882B2 (ja) 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
KR101855538B1 (ko) 2010-07-19 2018-05-04 바스프 에스이 수성 알칼리 세정 조성물 및 이의 사용 방법
CN101908502B (zh) * 2010-07-21 2012-07-04 河北工业大学 极大规模集成电路钨插塞cmp后表面洁净方法
KR20130129997A (ko) * 2010-11-29 2013-11-29 와코 쥰야꾸 고교 가부시키가이샤 구리배선용 기판 세정제 및 구리배선 반도체 기판 세정방법
JP5817310B2 (ja) * 2011-08-08 2015-11-18 三菱化学株式会社 半導体デバイス用基板の洗浄液及び洗浄方法
TWI572711B (zh) 2012-10-16 2017-03-01 盟智科技股份有限公司 半導體製程用的清洗組成物及清洗方法
JP2014154625A (ja) * 2013-02-06 2014-08-25 Mitsubishi Chemicals Corp 半導体デバイス用基板の洗浄液及び洗浄方法
EP2985783A4 (en) 2013-04-10 2016-05-11 Wako Pure Chem Ind Ltd CLEANING AGENT FOR A METAL WIRING SUBSTRATE, AND METHOD FOR CLEANING A SEMICONDUCTOR SUBSTRATE
JP6203525B2 (ja) * 2013-04-19 2017-09-27 関東化學株式会社 洗浄液組成物
US9862914B2 (en) 2013-11-08 2018-01-09 Wako Pure Chemical Industries, Ltd. Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface
KR102261638B1 (ko) 2013-11-15 2021-06-08 삼성디스플레이 주식회사 세정제 조성물 및 이를 이용한 금속배선 제조방법
DE102014105823A1 (de) * 2014-04-25 2015-10-29 Harting Kgaa Nachreinigungsverfahren von metallischen Kontaktelementen
TWI636131B (zh) 2014-05-20 2018-09-21 日商Ｊｓｒ股份有限公司 清洗用組成物及清洗方法
KR102326028B1 (ko) 2015-01-26 2021-11-16 삼성디스플레이 주식회사 반도체 및 디스플레이 제조공정용 세정제 조성물
US10319605B2 (en) 2016-05-10 2019-06-11 Jsr Corporation Semiconductor treatment composition and treatment method
KR20210107656A (ko) * 2018-12-18 2021-09-01 가부시키가이샤 도쿠야마 실리콘 에칭액
KR102397700B1 (ko) 2019-09-06 2022-05-17 엘티씨 (주) 세정제 조성물
CN115516073A (zh) 2020-05-11 2022-12-23 株式会社大赛璐 清洗剂组合物和化学机械研磨用组合物
EP4282945A3 (en) * 2022-05-27 2024-03-13 Samsung Electronics Co., Ltd. Cleaning composition, method of cleaning metal-containing film and method of manufacturing semiconductor device

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2041114A1 (en) * 1990-05-17 1991-11-18 Donnie R. Juen Low leaching uv curable sealant and encapsulant with post cure mechanism
US6546939B1 (en) 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US6187730B1 (en) 1990-11-05 2001-02-13 Ekc Technology, Inc. Hydroxylamine-gallic compound composition and process
JPH09151151A (ja) * 1995-12-01 1997-06-10 Idemitsu Petrochem Co Ltd ４−メトキシフェノールの製造方法
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
US20020111024A1 (en) * 1996-07-25 2002-08-15 Small Robert J. Chemical mechanical polishing compositions
US6030932A (en) 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5989353A (en) 1996-10-11 1999-11-23 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US6309560B1 (en) * 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
KR100610387B1 (ko) * 1998-05-18 2006-08-09 말린크로트 베이커, 인코포레이티드 초소형 전자 기판 세정용 실리케이트 함유 알칼리성 조성물
JP4565741B2 (ja) * 1998-05-18 2010-10-20 マリンクロッド・ベイカー・インコーポレイテッド マイクロエレクトロニクス基板洗浄用珪酸塩含有アルカリ組成物
KR20000053521A (ko) 1999-01-20 2000-08-25 고사이 아끼오 금속 부식 방지제 및 세척액
US7208049B2 (en) * 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
US6673757B1 (en) 2000-03-22 2004-01-06 Ashland Inc. Process for removing contaminant from a surface and composition useful therefor
US6436302B1 (en) 1999-08-23 2002-08-20 Applied Materials, Inc. Post CU CMP polishing for reduced defects
JP4256994B2 (ja) * 1999-10-05 2009-04-22 日本エレクトロプレイテイング・エンジニヤース株式会社 回路基板の実装方法及び金めっき液並びに金めっき方法
US6194366B1 (en) 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6492308B1 (en) * 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6432826B1 (en) * 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
JP3869608B2 (ja) * 2000-01-25 2007-01-17 Ｎｅｃエレクトロニクス株式会社 防食剤
US6475966B1 (en) * 2000-02-25 2002-11-05 Shipley Company, L.L.C. Plasma etching residue removal
KR100758186B1 (ko) * 2000-03-21 2007-09-13 와코 쥰야꾸 고교 가부시키가이샤 반도체 기판 세정제 및 세정 방법
US6468913B1 (en) * 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
JP2002053971A (ja) * 2000-08-03 2002-02-19 Sony Corp めっき方法及びめっき構造、並びに半導体装置の製造方法及び半導体装置
US6498131B1 (en) 2000-08-07 2002-12-24 Ekc Technology, Inc. Composition for cleaning chemical mechanical planarization apparatus
JP2002110679A (ja) * 2000-09-29 2002-04-12 Hitachi Ltd 半導体集積回路装置の製造方法
US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6787061B1 (en) * 2000-11-16 2004-09-07 Intel Corporation Copper polish slurry for reduced interlayer dielectric erosion and method of using same
US6635118B2 (en) 2001-01-17 2003-10-21 International Business Machines Corporation Aqueous cleaning of polymer apply equipment
US6627587B2 (en) 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
US20030104770A1 (en) * 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
JP4945857B2 (ja) 2001-06-13 2012-06-06 Ｊｓｒ株式会社 研磨パッド洗浄用組成物及び研磨パッド洗浄方法
MY131912A (en) 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
JP3797541B2 (ja) 2001-08-31 2006-07-19 東京応化工業株式会社 ホトレジスト用剥離液
US20030052308A1 (en) * 2001-09-19 2003-03-20 Shao-Chung Hu Slurry composition of chemical mechanical polishing
US20030119692A1 (en) * 2001-12-07 2003-06-26 So Joseph K. Copper polishing cleaning solution
JP2003195075A (ja) * 2001-12-26 2003-07-09 Jsr Corp 光導波路
JP2003332426A (ja) * 2002-05-17 2003-11-21 Renesas Technology Corp 半導体装置の製造方法および半導体装置
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US20050126588A1 (en) * 2003-11-04 2005-06-16 Carter Melvin K. Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor
US7435712B2 (en) 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US20050205835A1 (en) 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
US20060148666A1 (en) 2004-12-30 2006-07-06 Advanced Technology Materials Inc. Aqueous cleaner with low metal etch rate
US7923423B2 (en) 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7365045B2 (en) 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101730929B (zh) * 2007-05-08 2012-07-18 朗姆研究公司 清洁cmp后的晶片的热学方法
CN101807540B (zh) * 2009-02-16 2013-02-13 海力士半导体有限公司 在半导体器件中形成铜布线的方法
WO2012009941A1 (zh) * 2010-07-21 2012-01-26 河北工业大学 超大规模集成电路多层铜布线化学机械抛光后的洁净方法
CN102623327A (zh) * 2011-01-31 2012-08-01 中芯国际集成电路制造(上海)有限公司 一种化学机械研磨方法
CN102623327B (zh) * 2011-01-31 2015-04-29 中芯国际集成电路制造(上海)有限公司 一种化学机械研磨方法
CN106854461A (zh) * 2016-12-11 2017-06-16 周益铭 一种高渗透快速注水井除垢剂的制备方法
CN108998267A (zh) * 2018-08-29 2018-12-14 李少伟 一种半导体器件防蚀剂清洗剂及制备方法
CN109988676A (zh) * 2019-04-24 2019-07-09 上海新阳半导体材料股份有限公司 一种清洗液、其制备方法和应用
CN109988675A (zh) * 2019-04-24 2019-07-09 上海新阳半导体材料股份有限公司 长效型化学机械抛光后清洗液、其制备方法和应用
CN112981404A (zh) * 2021-02-05 2021-06-18 四川和晟达电子科技有限公司 一种钛合金蚀刻液组合物及其使用方法

Also Published As

Publication number Publication date
JP2007525836A (ja) 2007-09-06
EP1720965B1 (en) 2009-06-03
WO2005085408A1 (en) 2005-09-15
KR20060126527A (ko) 2006-12-07
US20050181961A1 (en) 2005-08-18
US7435712B2 (en) 2008-10-14
DE602005014746D1 (de) 2009-07-16
JP4550838B2 (ja) 2010-09-22
ATE432974T1 (de) 2009-06-15
KR101087916B1 (ko) 2011-11-30
EP1720965A1 (en) 2006-11-15

Similar Documents

Publication Publication Date Title
CN1906287A (zh) 改进的用于cmp后清洗的碱性化学处理法
CN1914309B (zh) 改进的用于cmp后清洗的酸性化学处理剂
US7498295B2 (en) Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide
TWI297730B (en) Alkaline post-chemical mechanical planarization cleaning compositions
TWI418622B (zh) 銅鈍化之後段化學機械拋光清洗組成物及利用該組成物之方法
TWI538033B (zh) 半導體基板處理用之組成物
CN101580774B (zh) 半导体基板洗涤液组合物
US20080076688A1 (en) Copper passivating post-chemical mechanical polishing cleaning composition and method of use
KR20000053521A (ko) 금속 부식 방지제 및 세척액
EP2687589A2 (en) Copper passivating post-chemical mechanical polishing cleaning composition and method of use
WO2021186241A1 (en) Cleaning composition for post chemical mechanical planarization and method of using the same
TW200535238A (en) Improved alkaline chemistry for post-CMP cleaning

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication