CN1918713A - 用于与高速CMOS兼容的绝缘体上Ge光电探测器的结构及其制造方法 - Google Patents
用于与高速CMOS兼容的绝缘体上Ge光电探测器的结构及其制造方法 Download PDFInfo
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- CN1918713A CN1918713A CNA2005800050067A CN200580005006A CN1918713A CN 1918713 A CN1918713 A CN 1918713A CN A2005800050067 A CNA2005800050067 A CN A2005800050067A CN 200580005006 A CN200580005006 A CN 200580005006A CN 1918713 A CN1918713 A CN 1918713A
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
Description
Claims (62)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/785,894 | 2004-02-24 | ||
US10/785,894 US7138697B2 (en) | 2004-02-24 | 2004-02-24 | Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector |
PCT/US2005/005570 WO2005083750A2 (en) | 2004-02-24 | 2005-02-22 | STRUCTURE FOR AND METHOD OF FABRICATING A HIGH-SPEED CMOS-COMPATIBLE Ge-ON-INSULATOR PHOTODETECTOR |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1918713A true CN1918713A (zh) | 2007-02-21 |
CN1918713B CN1918713B (zh) | 2010-06-23 |
Family
ID=34861710
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800050067A Expired - Fee Related CN1918713B (zh) | 2004-02-24 | 2005-02-22 | 半导体光电探测器、半导体集成电路以及它们的制造方法 |
Country Status (8)
Country | Link |
---|---|
US (3) | US7138697B2 (zh) |
EP (1) | EP1728283B9 (zh) |
JP (2) | JP5186206B2 (zh) |
KR (1) | KR100951226B1 (zh) |
CN (1) | CN1918713B (zh) |
AT (1) | ATE364903T1 (zh) |
DE (1) | DE602005001401T2 (zh) |
WO (1) | WO2005083750A2 (zh) |
Cited By (7)
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---|---|---|---|---|
CN102324445A (zh) * | 2011-09-22 | 2012-01-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | 具有改良结构的msm光探测器及其制备方法 |
CN102456541A (zh) * | 2010-10-19 | 2012-05-16 | 上海华虹Nec电子有限公司 | 锗硅监控片的制备方法及采用该片进行监控的方法 |
CN102610621A (zh) * | 2011-01-24 | 2012-07-25 | 台湾积体电路制造股份有限公司 | 带有抗反射层的图像传感器及其制造方法 |
CN103262264A (zh) * | 2010-11-22 | 2013-08-21 | 英特尔公司 | 单片三端子光电检测器 |
US9053980B2 (en) | 2008-09-08 | 2015-06-09 | Luxtera, Inc. | Monolithic integration of photonics and electronics in CMOS processes |
CN105378937A (zh) * | 2013-08-02 | 2016-03-02 | 英特尔公司 | 低电压光电检测器 |
CN115000232A (zh) * | 2022-06-16 | 2022-09-02 | 太原理工大学 | 一种基于Cs2AgBiBr6的近红外光电探测器及其制作方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8994104B2 (en) * | 1999-09-28 | 2015-03-31 | Intel Corporation | Contact resistance reduction employing germanium overlayer pre-contact metalization |
US7576369B2 (en) * | 2005-10-25 | 2009-08-18 | Udt Sensors, Inc. | Deep diffused thin photodiodes |
US8686529B2 (en) | 2010-01-19 | 2014-04-01 | Osi Optoelectronics, Inc. | Wavelength sensitive sensor photodiodes |
US7709921B2 (en) | 2008-08-27 | 2010-05-04 | Udt Sensors, Inc. | Photodiode and photodiode array with improved performance characteristics |
US8120023B2 (en) | 2006-06-05 | 2012-02-21 | Udt Sensors, Inc. | Low crosstalk, front-side illuminated, back-side contact photodiode array |
US8519503B2 (en) | 2006-06-05 | 2013-08-27 | Osi Optoelectronics, Inc. | High speed backside illuminated, front side contact photodiode array |
US7138697B2 (en) * | 2004-02-24 | 2006-11-21 | International Business Machines Corporation | Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector |
US7160753B2 (en) * | 2004-03-16 | 2007-01-09 | Voxtel, Inc. | Silicon-on-insulator active pixel sensors |
WO2007053686A2 (en) * | 2005-11-01 | 2007-05-10 | Massachusetts Institute Of Technology | Monolithically integrated semiconductor materials and devices |
US20070108546A1 (en) * | 2005-11-15 | 2007-05-17 | Canon Kabushiki Kaisha | Photoelectric converter and imaging system including the same |
US7485539B2 (en) * | 2006-01-13 | 2009-02-03 | International Business Machines Corporation | Strained semiconductor-on-insulator (sSOI) by a simox method |
WO2007084137A1 (en) * | 2006-01-20 | 2007-07-26 | Massachusetts Institute Of Technology | Lateral photodetectors with transparent electrodes |
US20070170476A1 (en) * | 2006-01-20 | 2007-07-26 | Giziewicz Wojciech P | Lateral photodetectors with transparent electrodes |
US20070235877A1 (en) * | 2006-03-31 | 2007-10-11 | Miriam Reshotko | Integration scheme for semiconductor photodetectors on an integrated circuit chip |
US20070274642A1 (en) * | 2006-04-12 | 2007-11-29 | Fujifilm Corporation | Optical transmission system |
US20070262296A1 (en) * | 2006-05-11 | 2007-11-15 | Matthias Bauer | Photodetectors employing germanium layers |
US7777290B2 (en) * | 2006-06-13 | 2010-08-17 | Wisconsin Alumni Research Foundation | PIN diodes for photodetection and high-speed, high-resolution image sensing |
US20080001181A1 (en) * | 2006-06-28 | 2008-01-03 | Titash Rakshit | Complementarily doped metal-semiconductor interfaces to reduce dark current in MSM photodetectors |
US7553687B2 (en) * | 2006-06-28 | 2009-06-30 | Intel Corporation | Dual seed semiconductor photodetectors |
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US9178092B2 (en) | 2006-11-01 | 2015-11-03 | Osi Optoelectronics, Inc. | Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays |
US8022494B2 (en) * | 2007-01-31 | 2011-09-20 | Fujifilm Corporation | Photodetector and manufacturing method thereof |
US8343792B2 (en) * | 2007-10-25 | 2013-01-01 | Bae Systems Information And Electronic Systems Integration Inc. | Method for manufacturing lateral germanium detectors |
WO2009110632A1 (ja) * | 2008-03-07 | 2009-09-11 | 日本電気株式会社 | SiGeフォトダイオード |
US7834412B2 (en) * | 2008-03-17 | 2010-11-16 | Sony Corporation | Low dark current image sensors by substrate engineering |
US7902540B2 (en) * | 2008-05-21 | 2011-03-08 | International Business Machines Corporation | Fast P-I-N photodetector with high responsitivity |
US20100038689A1 (en) * | 2008-08-13 | 2010-02-18 | Board Of Regents, The University Of Texas System | Integrating fabrication of photodetector with fabrication of cmos device on a silicon-on-insulator substrate |
US8831437B2 (en) | 2009-09-04 | 2014-09-09 | Luxtera, Inc. | Method and system for a photonic interposer |
MX2011002852A (es) | 2008-09-15 | 2011-08-17 | Udt Sensors Inc | Fotodiodo de espina de capa activa delgada con una capa n+ superficial y metodo para fabricacion del mismo. |
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US20100213466A1 (en) * | 2009-02-26 | 2010-08-26 | Hirschman Karl D | Photosensors including semiconductor-on-insulator structure |
JP2010223715A (ja) * | 2009-03-23 | 2010-10-07 | Shiro Sakai | 光検出器及びスペクトル検出器 |
US8399909B2 (en) | 2009-05-12 | 2013-03-19 | Osi Optoelectronics, Inc. | Tetra-lateral position sensing detector |
IT1394649B1 (it) * | 2009-06-01 | 2012-07-05 | St Microelectronics Srl | Fotodiodo con contatto schottky sulle pareti di trincee parallele e relativo metodo di fabbricazione |
US8232617B2 (en) * | 2009-06-04 | 2012-07-31 | Wisconsin Alumni Research Foundation | Flexible lateral pin diodes and three-dimensional arrays and imaging devices made therefrom |
JP5401203B2 (ja) | 2009-08-07 | 2014-01-29 | 株式会社日立製作所 | 半導体受光装置及びその製造方法 |
JP5222867B2 (ja) * | 2010-02-22 | 2013-06-26 | 株式会社半導体理工学研究センター | 半導体装置の製造方法 |
JP5866765B2 (ja) * | 2010-04-28 | 2016-02-17 | ソニー株式会社 | 導電性素子およびその製造方法、配線素子、情報入力装置、表示装置、ならびに電子機器 |
US8304272B2 (en) * | 2010-07-02 | 2012-11-06 | International Business Machines Corporation | Germanium photodetector |
IT1402530B1 (it) | 2010-10-25 | 2013-09-13 | St Microelectronics Srl | Circuiti integrati con retro-metallizzazione e relativo metodo di produzione. |
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US8901537B2 (en) | 2010-12-21 | 2014-12-02 | Intel Corporation | Transistors with high concentration of boron doped germanium |
US8772873B2 (en) * | 2011-01-24 | 2014-07-08 | Tsinghua University | Ge-on-insulator structure and method for forming the same |
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US8613798B2 (en) * | 2012-02-21 | 2013-12-24 | Ut-Battelle, Llc | Band gap tuning in transition metal oxides by site-specific substitution |
WO2014041674A1 (ja) * | 2012-09-14 | 2014-03-20 | 株式会社日立製作所 | 半導体受光素子 |
US8652934B1 (en) * | 2012-12-26 | 2014-02-18 | Micron Technology, Inc. | Semiconductor substrate for photonic and electronic structures and method of manufacture |
US8912615B2 (en) | 2013-01-24 | 2014-12-16 | Osi Optoelectronics, Inc. | Shallow junction photodiode for detecting short wavelength light |
JP6086019B2 (ja) * | 2013-04-23 | 2017-03-01 | 富士通株式会社 | 光半導体装置及び光半導体装置の製造方法 |
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US10468543B2 (en) | 2013-05-22 | 2019-11-05 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US10446700B2 (en) | 2013-05-22 | 2019-10-15 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
JP6602751B2 (ja) | 2013-05-22 | 2019-11-06 | シー−ユアン ワン, | マイクロストラクチャ向上型吸収感光装置 |
US11121271B2 (en) | 2013-05-22 | 2021-09-14 | W&WSens, Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
FR3006806A1 (fr) * | 2013-06-07 | 2014-12-12 | St Microelectronics Sa | Procede de formation de composants sur une couche de silicium-germanium |
US9136303B2 (en) | 2013-08-20 | 2015-09-15 | International Business Machines Corporation | CMOS protection during germanium photodetector processing |
KR102210325B1 (ko) | 2013-09-06 | 2021-02-01 | 삼성전자주식회사 | Cmos 소자 및 그 제조 방법 |
CN103715293B (zh) * | 2013-12-05 | 2015-12-02 | 中国航天科技集团公司第九研究院第七七一研究所 | 基于soi cmos工艺的辐射探测器件及其制备方法 |
US10191213B2 (en) * | 2014-01-09 | 2019-01-29 | Globalfoundries Inc. | Shielding structures between optical waveguides |
JP6423159B2 (ja) * | 2014-02-27 | 2018-11-14 | 富士通株式会社 | Ge系半導体装置、その製造方法及び光インターコネクトシステム |
JP6378928B2 (ja) * | 2014-05-15 | 2018-08-22 | 富士通株式会社 | Ge系半導体装置、その製造方法及び光インターコネクトシステム |
US9990525B2 (en) | 2014-05-30 | 2018-06-05 | Insiava (Pty) Ltd. | On-chip optical indicator of the state of the integrated circuit |
WO2015181760A1 (en) * | 2014-05-30 | 2015-12-03 | Insiava (Pty) Ltd. | A programmable integrated circuit (ic) containing an integrated optical transducer for programming the ic, and a related ic programming system and method |
CN107078145B (zh) | 2014-11-18 | 2019-05-07 | 王士原 | 经微结构增强吸收的光敏器件 |
US10571631B2 (en) | 2015-01-05 | 2020-02-25 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
TWI646581B (zh) * | 2015-02-09 | 2019-01-01 | 聯華電子股份有限公司 | 製作鍺磊晶層之方法以及應用其之製作元件之方法 |
KR102279162B1 (ko) * | 2015-03-03 | 2021-07-20 | 한국전자통신연구원 | 게르마늄 온 인슐레이터 기판 및 그의 형성방법 |
US9647165B2 (en) | 2015-08-20 | 2017-05-09 | GlobalFoundries, Inc. | Germanium photodetector with SOI doping source |
WO2017065692A1 (en) | 2015-10-13 | 2017-04-20 | Nanyang Technological University | Method of manufacturing a germanium-on-insulator substrate |
CN109564362B (zh) * | 2016-11-23 | 2023-12-12 | 洛克利光子有限公司 | 光电装置 |
KR102428557B1 (ko) * | 2017-11-20 | 2022-08-02 | 엘지디스플레이 주식회사 | 가시광 흡수율이 향상된 산화물 반도체 포토 트랜지스터 및 그 제조 방법 |
EP3490000B1 (en) * | 2017-11-24 | 2023-01-04 | ams AG | Near-infrared photodetector semiconductor device |
US10854646B2 (en) * | 2018-10-19 | 2020-12-01 | Attollo Engineering, LLC | PIN photodetector |
DE102018009110A1 (de) | 2018-11-21 | 2020-05-28 | Tdk-Micronas Gmbh | SCI-Halbleiterstruktur und Verfahren zur Herstellung einer SOI-Halbleiterstruktur |
CN109728110B (zh) * | 2019-01-02 | 2021-07-23 | 北京工业大学 | 垂直耦合型浅槽隔离共面光电探测器 |
US11217718B2 (en) * | 2019-02-11 | 2022-01-04 | Allegro Microsystems, Llc | Photodetector with a buried layer |
US11296247B2 (en) | 2019-02-11 | 2022-04-05 | Allegro Microsystems, Llc | Photodetector with a buried layer |
US11393806B2 (en) | 2019-09-23 | 2022-07-19 | Analog Devices, Inc. | Gallium nitride and silicon carbide hybrid power device |
CN110690311A (zh) * | 2019-10-25 | 2020-01-14 | 华南理工大学 | 一种Si衬底GaSe可见光探测器及制备方法 |
EP4111237A4 (en) * | 2020-02-26 | 2023-11-01 | Shenzhen Xpectvision Technology Co., Ltd. | SEMICONDUCTOR RADIATION DETECTOR |
US11329087B2 (en) | 2020-03-25 | 2022-05-10 | Globalfoundries U.S. Inc. | Photodetectors with adjacent anode-cathode pairs |
US11837613B2 (en) * | 2020-05-29 | 2023-12-05 | Taiwan Semiconductor Manufacturing Company Limited | Germanium-containing photodetector and methods of forming the same |
US11626442B2 (en) * | 2020-08-10 | 2023-04-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for forming image sensors |
US11742451B2 (en) * | 2020-11-24 | 2023-08-29 | Cisco Technology, Inc. | Integrate stressor with Ge photodiode using a substrate removal process |
CN113130681B (zh) * | 2021-04-14 | 2022-10-18 | 安徽大学 | 一种窄带隙二维磁性薄膜异质结非制冷红外探测器 |
EP4167270A1 (en) * | 2021-10-15 | 2023-04-19 | Infineon Technologies AG | Heteroepitaxial semiconductor device and method for fabricating a heteroepitaxial semiconductor device |
CN114512557A (zh) * | 2022-01-18 | 2022-05-17 | 中国电子科技集团公司第十三研究所 | 横向光电探测器 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4300152A (en) * | 1980-04-07 | 1981-11-10 | Bell Telephone Laboratories, Incorporated | Complementary field-effect transistor integrated circuit device |
US4722910A (en) * | 1986-05-27 | 1988-02-02 | Analog Devices, Inc. | Partially self-aligned metal contact process |
US5525828A (en) | 1991-10-31 | 1996-06-11 | International Business Machines Corporation | High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields |
JPH05327001A (ja) * | 1992-05-19 | 1993-12-10 | Sony Corp | 受光素子 |
JP3147133B2 (ja) * | 1993-04-13 | 2001-03-19 | 住友電気工業株式会社 | 横型受光素子及びその形成方法 |
US5494857A (en) * | 1993-07-28 | 1996-02-27 | Digital Equipment Corporation | Chemical mechanical planarization of shallow trenches in semiconductor substrates |
US5736435A (en) * | 1995-07-03 | 1998-04-07 | Motorola, Inc. | Process for fabricating a fully self-aligned soi mosfet |
TW415103B (en) | 1998-03-02 | 2000-12-11 | Ibm | Si/SiGe optoelectronic integrated circuits |
US6177289B1 (en) * | 1998-12-04 | 2001-01-23 | International Business Machines Corporation | Lateral trench optical detectors |
WO2001001466A1 (en) * | 1999-06-25 | 2001-01-04 | Massachusetts Institute Of Technology | Oxidation of silicon on germanium |
US6373112B1 (en) * | 1999-12-02 | 2002-04-16 | Intel Corporation | Polysilicon-germanium MOSFET gate electrodes |
JP3717104B2 (ja) * | 2000-05-30 | 2005-11-16 | シャープ株式会社 | 回路内蔵受光素子 |
KR100401655B1 (ko) * | 2001-01-18 | 2003-10-17 | 주식회사 컴텍스 | ALE를 이용한 알루미나(Al₂O₃) 유전체 층 형성에 의한 스마트 공정을 이용한 유니본드형 SOI 웨이퍼의 제조방법 |
US6451702B1 (en) * | 2001-02-16 | 2002-09-17 | International Business Machines Corporation | Methods for forming lateral trench optical detectors |
CN1306619C (zh) * | 2001-03-30 | 2007-03-21 | 加利福尼亚大学董事会 | 纳米线以及由其制造的器件 |
US6576532B1 (en) * | 2001-11-30 | 2003-06-10 | Motorola Inc. | Semiconductor device and method therefor |
US20030141565A1 (en) * | 2002-01-28 | 2003-07-31 | Fumihiko Hirose | Diode |
CN1195326C (zh) * | 2002-04-26 | 2005-03-30 | 中国科学院半导体研究所 | 硅基光子集成的器件及制作方法 |
US6903432B2 (en) * | 2003-02-13 | 2005-06-07 | Intel Corporation | Photosensitive device |
US7138697B2 (en) * | 2004-02-24 | 2006-11-21 | International Business Machines Corporation | Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector |
-
2004
- 2004-02-24 US US10/785,894 patent/US7138697B2/en active Active
-
2005
- 2005-02-22 DE DE602005001401T patent/DE602005001401T2/de active Active
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9053980B2 (en) | 2008-09-08 | 2015-06-09 | Luxtera, Inc. | Monolithic integration of photonics and electronics in CMOS processes |
US11438065B2 (en) | 2008-09-08 | 2022-09-06 | Luxtera, Inc. | Method and system for monolithic integration of photonics and electronics in CMOS processes |
US10256908B2 (en) | 2008-09-08 | 2019-04-09 | Luxtera, Inc. | Method and system for monolithic integration of photonics and electronics in CMOS processes |
TWI503890B (zh) * | 2008-09-08 | 2015-10-11 | Luxtera Inc | 互補型金屬氧化物半導體製程中單石整合光子及電子之方法及系統 |
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CN103262264B (zh) * | 2010-11-22 | 2016-04-27 | 英特尔公司 | 单片三端子光电检测器 |
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CN105378937B (zh) * | 2013-08-02 | 2017-08-08 | 英特尔公司 | 低电压光电检测器 |
CN115000232A (zh) * | 2022-06-16 | 2022-09-02 | 太原理工大学 | 一种基于Cs2AgBiBr6的近红外光电探测器及其制作方法 |
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EP1728283A2 (en) | 2006-12-06 |
US20050184354A1 (en) | 2005-08-25 |
DE602005001401T2 (de) | 2008-02-21 |
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JP2007527626A (ja) | 2007-09-27 |
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WO2005083750A2 (en) | 2005-09-09 |
EP1728283B9 (en) | 2007-10-03 |
KR100951226B1 (ko) | 2010-04-05 |
DE602005001401D1 (de) | 2007-07-26 |
JP5186206B2 (ja) | 2013-04-17 |
ATE364903T1 (de) | 2007-07-15 |
JP5404858B2 (ja) | 2014-02-05 |
US20080113467A1 (en) | 2008-05-15 |
EP1728283B1 (en) | 2007-06-13 |
US7138697B2 (en) | 2006-11-21 |
WO2005083750A3 (en) | 2005-10-27 |
CN1918713B (zh) | 2010-06-23 |
KR20070028311A (ko) | 2007-03-12 |
JP2012186507A (ja) | 2012-09-27 |
US7510904B2 (en) | 2009-03-31 |
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