CN1949086A - 基板处理方法以及基板处理装置 - Google Patents
基板处理方法以及基板处理装置 Download PDFInfo
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- CN1949086A CN1949086A CNA2006101423668A CN200610142366A CN1949086A CN 1949086 A CN1949086 A CN 1949086A CN A2006101423668 A CNA2006101423668 A CN A2006101423668A CN 200610142366 A CN200610142366 A CN 200610142366A CN 1949086 A CN1949086 A CN 1949086A
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- Prior art keywords
- substrate
- etchant resist
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- wafer
- jet flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Abstract
Description
Claims (8)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005299865 | 2005-10-14 | ||
JP2005-299865 | 2005-10-14 | ||
JP2005299865 | 2005-10-14 | ||
JP2006275098A JP4986566B2 (ja) | 2005-10-14 | 2006-10-06 | 基板処理方法および基板処理装置 |
JP2006-275098 | 2006-10-06 | ||
JP2006275098 | 2006-10-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1949086A true CN1949086A (zh) | 2007-04-18 |
CN1949086B CN1949086B (zh) | 2010-09-08 |
Family
ID=37948616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101423668A Expired - Fee Related CN1949086B (zh) | 2005-10-14 | 2006-10-11 | 基板处理方法以及基板处理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7959820B2 (zh) |
JP (1) | JP4986566B2 (zh) |
KR (1) | KR20070041342A (zh) |
CN (1) | CN1949086B (zh) |
TW (1) | TWI337380B (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102357481A (zh) * | 2011-08-22 | 2012-02-22 | 深圳深爱半导体股份有限公司 | 甩版清洗机及光刻版的清洗方法 |
CN103264022A (zh) * | 2013-05-15 | 2013-08-28 | 京东方科技集团股份有限公司 | 基板清洗装置、系统及方法 |
CN103301761A (zh) * | 2013-06-09 | 2013-09-18 | 京东方科技集团股份有限公司 | 气液混合装置以及清洗设备 |
CN104415930A (zh) * | 2013-09-03 | 2015-03-18 | 亿力鑫系统科技股份有限公司 | 清洗基板方法、流体喷头及流体喷头装置 |
CN104637784A (zh) * | 2013-11-13 | 2015-05-20 | 东京毅力科创株式会社 | 基板清洗方法、基板清洗系统 |
CN106158704A (zh) * | 2015-05-15 | 2016-11-23 | 东京毅力科创株式会社 | 基板处理装置以及基板处理方法 |
CN110556314A (zh) * | 2018-05-31 | 2019-12-10 | 株式会社斯库林集团 | 衬底处理方法及衬底处理装置 |
CN110868811A (zh) * | 2019-11-20 | 2020-03-06 | 江苏上达电子有限公司 | 一种cof基板成品的新的清洗方式 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4986565B2 (ja) * | 2005-12-02 | 2012-07-25 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP4863897B2 (ja) * | 2007-01-31 | 2012-01-25 | 東京エレクトロン株式会社 | 基板洗浄装置、基板洗浄方法及び基板洗浄プログラム |
KR100924561B1 (ko) * | 2008-04-07 | 2009-11-02 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
JP5185688B2 (ja) * | 2008-05-15 | 2013-04-17 | ルネサスエレクトロニクス株式会社 | 基板処理方法および基板処理装置 |
JP2010115642A (ja) * | 2008-10-15 | 2010-05-27 | Okuto:Kk | 付着物の除去方法およびこれに用いる付着物の除去装置 |
JP5523062B2 (ja) * | 2008-11-20 | 2014-06-18 | 芝浦メカトロニクス株式会社 | 基板処理装置および基板処理方法 |
JP5381388B2 (ja) * | 2009-06-23 | 2014-01-08 | 東京エレクトロン株式会社 | 液処理装置 |
CN102043355A (zh) * | 2009-10-23 | 2011-05-04 | 联华电子股份有限公司 | 移除光致抗蚀剂的方法 |
CN110189995A (zh) * | 2010-12-10 | 2019-08-30 | 东京毅力科创Fsi公司 | 用于从衬底选择性地移除氮化物的方法 |
US8940103B2 (en) * | 2012-03-06 | 2015-01-27 | Tokyo Electron Limited | Sequential stage mixing for single substrate strip processing |
JP5836906B2 (ja) * | 2012-04-26 | 2015-12-24 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
JP5832397B2 (ja) * | 2012-06-22 | 2015-12-16 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
US9017568B2 (en) | 2013-01-22 | 2015-04-28 | Tel Fsi, Inc. | Process for increasing the hydrophilicity of silicon surfaces following HF treatment |
US20140273498A1 (en) * | 2013-03-15 | 2014-09-18 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method |
TWI462148B (zh) * | 2013-07-10 | 2014-11-21 | Fluid nozzle and fluid nozzle device | |
CN103586230A (zh) * | 2013-11-13 | 2014-02-19 | 上海华力微电子有限公司 | 单片清洗装置及其应用方法 |
KR102342131B1 (ko) * | 2014-08-15 | 2021-12-21 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 및 기판 처리 방법 |
KR101621482B1 (ko) * | 2014-09-30 | 2016-05-17 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
KR101604438B1 (ko) * | 2015-09-22 | 2016-03-17 | (주) 앤에스알시 | 반도체 웨이퍼 세정용 고온 미스트형 디아이(di)를 통한 스마트 nr형 세정장치 |
TWI629720B (zh) * | 2015-09-30 | 2018-07-11 | 東京威力科創股份有限公司 | 用於濕蝕刻製程之溫度的動態控制之方法及設備 |
TWI584882B (zh) * | 2016-03-11 | 2017-06-01 | Els System Technology Co Ltd | Multi-nozzle device |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04192319A (ja) * | 1990-07-23 | 1992-07-10 | Matsushita Electron Corp | レジスト除去方法 |
JP3278935B2 (ja) * | 1992-10-31 | 2002-04-30 | ソニー株式会社 | レジスト除去方法 |
JPH0969509A (ja) | 1995-09-01 | 1997-03-11 | Matsushita Electron Corp | 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法 |
TW535216B (en) | 1996-09-13 | 2003-06-01 | Tokyo Electron Ltd | Photoresist processing method and photoresist processing system |
JPH1167738A (ja) * | 1997-08-18 | 1999-03-09 | Oki Electric Ind Co Ltd | アッシング方法および装置 |
JP3880189B2 (ja) * | 1998-02-13 | 2007-02-14 | 芝浦メカトロニクス株式会社 | アッシング装置およびアッシング方法 |
JP3120425B2 (ja) * | 1998-05-25 | 2000-12-25 | 旭サナック株式会社 | レジスト剥離方法及び装置 |
US6274506B1 (en) | 1999-05-14 | 2001-08-14 | Fsi International, Inc. | Apparatus and method for dispensing processing fluid toward a substrate surface |
JP2000331975A (ja) | 1999-05-19 | 2000-11-30 | Ebara Corp | ウエハ洗浄装置 |
JP2001093806A (ja) * | 1999-09-20 | 2001-04-06 | Seiko Epson Corp | レジスト膜の除去方法および装置 |
JP2001308070A (ja) | 2000-04-24 | 2001-11-02 | Matsushita Electric Ind Co Ltd | ドライエッチング装置およびそれを用いた半導体基板の処理方法 |
US7479205B2 (en) | 2000-09-22 | 2009-01-20 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
US6951221B2 (en) | 2000-09-22 | 2005-10-04 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
JP4005326B2 (ja) * | 2000-09-22 | 2007-11-07 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
US6705331B2 (en) | 2000-11-20 | 2004-03-16 | Dainippon Screen Mfg., Co., Ltd. | Substrate cleaning apparatus |
JP2003177556A (ja) | 2001-12-12 | 2003-06-27 | Sharp Corp | フォトレジスト剥離剤組成物および剥離方法 |
US6815376B2 (en) | 2002-06-14 | 2004-11-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Microelectronic substrate edge bead processing apparatus and method |
JP2004140196A (ja) * | 2002-10-17 | 2004-05-13 | Nec Electronics Corp | 半導体装置の製造方法および基板洗浄装置 |
JP4318950B2 (ja) * | 2003-04-22 | 2009-08-26 | 東京エレクトロン株式会社 | 基板処理方法および基板処理システム |
JP2004349501A (ja) * | 2003-05-22 | 2004-12-09 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JP4494840B2 (ja) | 2003-06-27 | 2010-06-30 | 大日本スクリーン製造株式会社 | 異物除去装置、基板処理装置および基板処理方法 |
JP2005032819A (ja) * | 2003-07-08 | 2005-02-03 | Dainippon Screen Mfg Co Ltd | レジスト剥離装置およびレジスト剥離方法 |
JP2005072260A (ja) | 2003-08-25 | 2005-03-17 | Sanyo Electric Co Ltd | プラズマ処理方法、プラズマエッチング方法、固体撮像素子の製造方法 |
JP2005109167A (ja) | 2003-09-30 | 2005-04-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2005183937A (ja) * | 2003-11-25 | 2005-07-07 | Nec Electronics Corp | 半導体装置の製造方法およびレジスト除去用洗浄装置 |
JP2005191511A (ja) | 2003-12-02 | 2005-07-14 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP2005228790A (ja) * | 2004-02-10 | 2005-08-25 | Mitsubishi Electric Corp | レジスト除去方法およびレジスト除去装置ならびに半導体ウエハ |
JP4377285B2 (ja) * | 2004-06-04 | 2009-12-02 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP4986565B2 (ja) * | 2005-12-02 | 2012-07-25 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
-
2006
- 2006-10-06 JP JP2006275098A patent/JP4986566B2/ja not_active Expired - Fee Related
- 2006-10-10 KR KR1020060098397A patent/KR20070041342A/ko not_active Application Discontinuation
- 2006-10-11 CN CN2006101423668A patent/CN1949086B/zh not_active Expired - Fee Related
- 2006-10-12 US US11/548,855 patent/US7959820B2/en not_active Expired - Fee Related
- 2006-10-13 TW TW095137709A patent/TWI337380B/zh not_active IP Right Cessation
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102357481A (zh) * | 2011-08-22 | 2012-02-22 | 深圳深爱半导体股份有限公司 | 甩版清洗机及光刻版的清洗方法 |
CN103264022A (zh) * | 2013-05-15 | 2013-08-28 | 京东方科技集团股份有限公司 | 基板清洗装置、系统及方法 |
CN103264022B (zh) * | 2013-05-15 | 2015-04-08 | 京东方科技集团股份有限公司 | 基板清洗装置、系统及方法 |
CN103301761A (zh) * | 2013-06-09 | 2013-09-18 | 京东方科技集团股份有限公司 | 气液混合装置以及清洗设备 |
CN104415930A (zh) * | 2013-09-03 | 2015-03-18 | 亿力鑫系统科技股份有限公司 | 清洗基板方法、流体喷头及流体喷头装置 |
CN104637784B (zh) * | 2013-11-13 | 2019-04-09 | 东京毅力科创株式会社 | 基板清洗方法、基板清洗系统 |
US9953826B2 (en) | 2013-11-13 | 2018-04-24 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning system, and memory medium |
CN104637784A (zh) * | 2013-11-13 | 2015-05-20 | 东京毅力科创株式会社 | 基板清洗方法、基板清洗系统 |
US10811283B2 (en) | 2013-11-13 | 2020-10-20 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning system, and memory medium |
US11367630B2 (en) | 2013-11-13 | 2022-06-21 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning system, and memory medium |
CN106158704A (zh) * | 2015-05-15 | 2016-11-23 | 东京毅力科创株式会社 | 基板处理装置以及基板处理方法 |
CN106158704B (zh) * | 2015-05-15 | 2021-03-05 | 东京毅力科创株式会社 | 基板处理装置以及基板处理方法 |
CN110556314A (zh) * | 2018-05-31 | 2019-12-10 | 株式会社斯库林集团 | 衬底处理方法及衬底处理装置 |
CN110556314B (zh) * | 2018-05-31 | 2023-08-18 | 株式会社斯库林集团 | 衬底处理方法及衬底处理装置 |
CN110868811A (zh) * | 2019-11-20 | 2020-03-06 | 江苏上达电子有限公司 | 一种cof基板成品的新的清洗方式 |
CN110868811B (zh) * | 2019-11-20 | 2021-04-06 | 江苏上达电子有限公司 | 一种cof基板成品的清洗方式 |
Also Published As
Publication number | Publication date |
---|---|
US20070087456A1 (en) | 2007-04-19 |
KR20070041342A (ko) | 2007-04-18 |
JP2007134689A (ja) | 2007-05-31 |
US7959820B2 (en) | 2011-06-14 |
JP4986566B2 (ja) | 2012-07-25 |
CN1949086B (zh) | 2010-09-08 |
TWI337380B (en) | 2011-02-11 |
TW200725727A (en) | 2007-07-01 |
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Owner name: DAINIPPON SCREEN MFG. CO., LTD. Free format text: FORMER NAME: DAINIPPON MESH PLATE MFR. CO., LTD. Owner name: SCREEN GROUP CO., LTD. Free format text: FORMER NAME: DAINIPPON SCREEN MFG. CO., LTD. |
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Address after: Kyoto City, Kyoto, Japan Patentee after: Skilling Group Address before: Kyoto City, Kyoto, Japan Patentee before: DAINIPPON SCREEN MFG Co.,Ltd. Address after: Kyoto City, Kyoto, Japan Patentee after: DAINIPPON SCREEN MFG Co.,Ltd. Address before: Kyoto City, Kyoto, Japan Patentee before: Dainippon Screen Mfg. Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20100908 Termination date: 20211011 |