CN1950291B - 在微机电装置的制造中减轻蚀刻电荷的破坏 - Google Patents

在微机电装置的制造中减轻蚀刻电荷的破坏 Download PDF

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CN1950291B
CN1950291B CN2005800139140A CN200580013914A CN1950291B CN 1950291 B CN1950291 B CN 1950291B CN 2005800139140 A CN2005800139140 A CN 2005800139140A CN 200580013914 A CN200580013914 A CN 200580013914A CN 1950291 B CN1950291 B CN 1950291B
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CN1950291A (zh
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董明孝
布莱恩·詹姆斯·加利
马尼什·科塔里
克拉伦斯·徐
约翰·贝蒂
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Nujira Ltd
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    • B81—MICROSTRUCTURAL TECHNOLOGY
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Abstract

本发明揭示一种制造一微机电装置的方法，其包括在一衬底上形成至少两个导电层。在所述两个导电层之间形成一绝缘层。将所述导电层电耦接于一起并随后移除所述绝缘层以在所述导电层之间形成一间隙。对所述层进行电耦接会减轻或消除在所述移除过程中静电荷积聚对装置的影响。

Description

在微机电装置的制造中减轻蚀刻电荷的破坏
技术领域
本发明涉及制造一微机电装置的方法以及设备。
背景技术
微机电系统装置(MEMS)可由薄膜工艺制成。这些工艺可涉及到一系列沉积成层形式的薄膜，对这些层实施图案化及蚀刻来形成所述装置。为使所述装置能够移动，其中一个层可为绝缘层。绝缘层是一种在形成装置中各个层时用于充当一结构部件、但当装置制备完成时可予以移除的层。
绝缘层的移除可涉及到一使用一种仅对牺牲层材料起作用的材料作为蚀刻剂的蚀刻工艺。在某些情形中，绝缘层可为一可通过一种干气体蚀刻加以移除的氧化物。也可存在其他形式的绝缘层、以及其他移除方法。移除绝缘层后通常会形成一间隙，所述装置中的一部件将在受到致动时穿过所述间隙移动。
MEMS装置常常通过使用会在相隔所述间隙的一第一导电层与一第二导电层之间形成一电压差的电信号来致动。在对绝缘层进行干气体蚀刻过程中，可能会在各个层上积聚静电荷，从而使可移动部件被吸引至另一导电层。在极端的情况下，这两个层可能会变得粘著在一起并使所述装置变得无法使用。在不太极端的情形中，可移动元件可能会受损或变形并随后变得不能正确工作。
发明内容
本发明提出一种制造一微机电装置的方法，其包括在一衬底上形成至少两个导电层。在所述两个导电层之间形成一绝缘层。将所述导电层电耦接于一起并随后移除所述绝缘层以在所述导电层之间形成一间隙。对所述层进行电耦接可减轻或消除在所述移除过程中静电荷积聚对装置的影响。
本发明还提出一种用于制造一微机电装置的设备，其包括：一导电线，其构造成在一蚀刻工艺之前将至少两个导电层电连接于一起，其中所述至少两个导电层形成所述微机械装置的至少一部分。
附图说明
通过参照附图阅读本文的揭示内容可最佳地了解本发明。
图1显示一使用一绝缘层制成的微机电装置的一实施例；
图2显示一因在蚀刻工艺过程中积聚静电荷而无法使用的微机电装置的一实施例；
图3显示一种用于减轻在蚀刻工艺过程中所积聚的静电荷的影响的设备的一实施例；
图4显示一种用于减轻在蚀刻工艺过程中的静电荷的影响的设备的一替代实施例；
图5显示一种制造微机电装置的方法的一实施例的流程图；
图6a及6b显示一种用于减轻在蚀刻工艺过程中的静电荷的影响的替代设备的实施例。
具体实施方式
图1显示一通过一包含一绝缘层的薄膜工艺制成的微机电装置的实例。该特定实例是一干涉式调制器实例，但本发明的实施例也可适用于通过具有绝缘层的薄膜工艺制成的所有种类的MEMS装置。所述调制器形成于一透明衬底10上。一通常包含金属层及氧化层(例如12及14)的光学堆叠形成于衬底10上。一金属膜18形成于一牺牲层(未显示)上。所述牺牲层也可称作一绝缘层，因为其用于在加工过程中使各导电层相互电绝缘。在形成所述膜之前，在绝缘层内图案化成若干通路以使所述膜中的金属能够填充这些通路并形成支柱(例如16)。
在制成调制器结构(例如金属膜18)后，移除所述绝缘层。这会使膜18的某些部分朝所述光学堆叠的电极层12偏转。倘若为干涉式调制器，膜18会在膜18与电极层12之间的电压差的操纵下被吸引至金属层12。层12及膜18可为前面所述的金属，或者可为任一种导电材料。图1中所示膜部分所形成的单元是通过对导电层14施加一不同于膜18之电压的电压来激励。此使所述膜变得被静电吸引至电极层或第一导电层12。所述导电层可为金属或任何其他导电材料。
在移除所述绝缘层过程中，可能会在这两个导电层的表面上积聚足够多的静电荷，从而使所述膜在不受激励的情况下朝导电层14吸引。此种状态显示于图2中。这通常是干涉式调制器的受激励状态，但区别在于在电压电位发生改变时所述膜不从氧化层12上释放。所述膜已永久性地呈现受激励状态。这可能是由粘著与摩擦相组合(常常称作粘著摩擦(stiction))所造成，并因导电层12与导电膜18之间的静电力而加剧。
可通过许多种不同的方式来实现绝缘层的移除。通常，使用一干气体蚀刻(例如二氟化氙(XeF2)蚀刻)来移除绝缘层。尽管这些为蚀刻工艺的实例，然而也可使用任何蚀刻工艺。可能是干燥的环境促进了静电荷的积聚。然而，较佳不必改变用于制造MEMS装置的材料或工艺基础，而是修改用于消除静电荷积聚的工艺。
通过在湿蚀刻工艺过程中将导电层接地也将获得某些优点。可能对装置电化学性质存在影响，这些影响可通过接地来实现(如果有利)或减轻(如果不利)。在一实施例中，将各个层一同接地，移除绝缘层并使接地保留在原位，因而可安全地对装置进行运输而不用担心出现静电放电。假如蚀刻为湿蚀刻或干蚀刻，此将有所助益。
接地工艺可为通过一处于装置结构外部的设备或机构进行的外部接地。另一选择为，所述接地可为在制造过程中实现的装置内部结构的一部分。首先，将论述外部接地。
一种用于减轻在蚀刻工艺过程中积聚静电荷的设备显示于图3中。一替代实施例则显示于图4中。在图3中，一导电线22已附接至第一导电层14及第二导电层18以使这些导电层保持处于同一电位。同一电位可包括将这些导电层附接至一接地平面、或者只是将这些导电层附接在一起。通过使这些导电层保持处于同一电位，静电荷积聚将不会在这两个层之间造成电位差，并将因此避免出现在蚀刻工艺过程中使所述膜受激励的问题。如下文中所将进一步详细说明，此通常将在蚀刻工艺之前进行，当然这两个层可在蚀刻工艺之前的任一时刻电耦接于一起。可能需要将电耦接限制在上面制造所述装置的衬底中的无源区域内。
图4中所示的替代实施例显示从三个导电层及两个绝缘层制成一装置。在一干涉式调制器的该实施例中，等价于图1及3中所示第二导电层18的实际上是两个导电层18a及18b。这两个导电层通常作为两个单独的层沉积而成但相互进行实体及电连接。此将通常使挠性层及镜面层只需要使用一条连接来连接其他导电层。此种特别的形成方式可能需要两个绝缘层作为第一绝缘层的等价层，这是因为除了形成于层18a与电极层12之间的一个绝缘层之外还可在层18a与18b之间形成一绝缘层。层18a与18b之间的连接可通过第一绝缘层的第二部分中的一通路来形成。对于在此处进行的说明，该绝缘层并不重要，因为沉积于上面的导电层通常不需要使用一导电线将其连接至其他导电层。
一第二绝缘层25可形成于挠性层18b上，以在导电层18b与一第三导电层26之间提供隔离。本实例中的第三导电层是总线层，用于在挠性层与镜面层上方形成一信令总线来帮助对调制器的各单元进行寻址。无论可采用本发明各实施例的应用或MEMS装置如何，此均仅旨在作为一对多个导电层进行电耦接以减轻或消除在蚀刻工艺过程中的静电荷积聚的实例。
在图4中还显示一种用于替代仅在这两个层之间进行连接的方案。在图4中，导电线22附接至一接地平面-在本实例中为蚀刻室30的框架。此可比将两个或更多个层电连接于一起更为可取，因为其将连接至一“已知”电位，即地电位。另一选择为，可将导电线22及24附接至其他结构。只要这两个或更多个层保持处于同一电位，静电荷的积聚就应不会导致所述膜被吸引至衬底上的导电层。
如前面所述，使用一种用于避免或减轻静电荷积聚且不会干扰当前用于制造MEMS装置的工艺流程的方法可能更为可取。一种制造MEMS装置(在本实例中为前面所述的干涉式调制器)的一实例以流程图形式显示于图5中。
必须注意，在本说明中作为一特定实例给出的工艺流程是针对干涉式调制器。然而，本发明的实施例也可应用于任何通过干气体蚀刻来移除绝缘层的MEMS装置制造流程。如前面所述，干涉式调制器制造于一透明衬底(例如玻璃)上。在32中，沉积一电极层并对其进行图案化及蚀刻，以形成用于对调制器的各单元进行寻址的电极。然后在34中沉积及蚀刻光学层。在36中沉积第一绝缘层，并随后在38中沉积镜面层。在本实例中，第一导电层将为镜面层。
然后在40中对第一导电层进行图案化及蚀刻。在42中沉积一第二绝缘层。同样，这是具体针对图4所示的实例，其中第二导电层实际上是由两个导电层(挠性层及镜面层)形成。可将第一及第二绝缘层视为一个绝缘层，这是因为第二绝缘层两侧上的导电层之间的静电荷积聚无关紧要。然后在44中沉积挠性层并在46中对其进行图案化及蚀刻。
在48中，将通常的工艺流程修改成包括将第一及第二导电层(在本实例中为电极层及镜面/挠性层)接地。对于一具有两个导电层及一个有效绝缘层的装置，该过程可在50中结束，其中在50中通过蚀刻来移除绝缘层。此仅为一个实施例，且因此以虚线框形式形式该过程的结束。对于一具有不止两个导电层的装置而言，该过程可改为在52中继续进行。
在52中，在本特定实例中在52中沉积一第三绝缘层。如上文所述，此可实际上仅为一第二有效绝缘层。在54中沉积总线层或第三导电层，并在56中对其进行图案化及蚀刻。在58中，将各导电层(在本实例中有三个导电层)接地或电耦接于一起(在58中)，并在60中移除绝缘层。根据所述装置的功能及电驱动方案而定，在62中将各导电层解耦。对于其中装置的运行依赖于在保持处于不同电压电位的导电层之间所出现的静电吸引的干涉式调制器这一实例而言，将需要撤消所述耦接。
导线耦接是一对各导电层进行耦接的外部工艺的实例。其他外部的实例包括使用测试探针结构在各个层之间提供耦接、及使用离子化气体-其中由气体本身的分子在各个层之间提供耦接。
必须注意，将各个层连接于一起或者将其全部连接至同一电位的工艺称作所述层的耦接。此旨在涵盖其中仅将各个层连接在一起、共同连接至一共用电位(其中该电位包括地电位)、或将各个层分别连接至一共用电位或同一电位的情形。不打算限制将各个层电耦接于一起的方式。
一内部接地设备的实例显示于图6a及6b中。作为MEMS装置的制造的一部分，通常在一个衬底(其一部分在图6a中显示于70)上制造许多个装置。在装置制造过程中，可提供从装置的不同层(例如电极层12、机械层或镜面层18、及总线层26)到测试焊垫和凸块(例如76)的引线。作为装置制造中导电层图案化及蚀刻工艺的一部分，有可能例如通过将所有焊垫连接于一起的连接线74将这些焊垫耦接于一起。此会将各个导电层耦接于一起以进行进一步处理。
如上文所述，对于不能在将各个层耦接于一起的情况下运行的装置而言，将须撤消此种内部耦接。如在图6b中所示，可断开焊垫76与耦接连接线74之间的连接。当将衬底划分成其各个单独装置时，可对其进行锯割、划刻或以其他方式使其分开。用于形成断口的线(例如划刻线78)将会切断焊垫76与耦接连接线74之间的耦接。此为一内部耦接的实例。
通过此种方式，可使用当前工艺来蚀刻具有若干导电层及至少一个绝缘层的MEMS装置，同时避免出现可使装置无法运行的静电荷积聚。在封装之前，且通常一旦将装置从蚀刻室中移出，便撤消或以其他方式消除装置中的连接。
因此，尽管至此已说明了一种用于减轻或消除在蚀刻工艺过程中的静电荷影响的方法及设备的一特定实施例，然而并非旨在将此种特定说明视为对本发明范围的限制，除非是在上文权利要求书中提到的情况下。

Claims (24)

1.一种制造一微机电装置的方法，其包括：
在一衬底上形成至少第一及第二导电层；
在所述第一与第二导电层之间形成一绝缘层；
使用一导电线将所述第一与第二导电层电耦接于一起以提供所述第一与第二导电层之间的电连接；
移除所述绝缘层以在所述第一与第二导电层之间形成一间隙；及
在移除所述绝缘层之后将所述第一与第二导电层在电方面解耦。
2.如权利要求1所述的方法，其进一步包括形成一第三导电层。
3.如权利要求2所述的方法，其中形成一绝缘层包括在所述第一与第二导电层之间形成第一绝缘层以及在所述第二与第三导电层之间形成第二绝缘层。
4.如权利要求1所述的方法，其中移除所述绝缘层包括对所述绝缘层实施一蚀刻。
5.如权利要求4所述的方法，其中实施一蚀刻包括实施一干气体蚀刻。
6.如权利要求5所述的方法，其中实施一干气体蚀刻包括实施一二氟化氙蚀刻。
7.如权利要求1所述的方法，其中将所述导电层电耦接于一起包括从外部将所述导电层耦接于一起。
8.如权利要求1所述的方法，其进一步包括将所述导电线连接至一共用电压电位。
9.如权利要求1所述的方法，其中将所述导电层电耦接于一起包括对每一导电层使用导电线并将所述导电线全部电连接至同一电位。
10.如权利要求1所述的方法，其中将所述导电层电耦接于一起包括将所述导电层一起电耦接于所述衬底的一无源区域中。
11.如权利要求1所述的方法，其中电耦接包括将所述第一与第二导电层暂时地电耦接于一起。
12.如权利要求1所述的方法，其中电耦接包括在制作过程中将所述第一与第二导电层电耦接于一起。
13.如权利要求1所述的方法，其中对所述第一及第二导电层在电方面进行解耦包括使来自所述第一与第二导电层的所述导电线在实体上切断。
14.一种用于制造一微机电装置的设备，其包括：
一导电线，其构造成在一蚀刻工艺之前将第一和第二导电层暂时地电连接于一起，其中所述第一和第二导电层由一绝缘层分隔，所述绝缘层由所述蚀刻工艺移除，且所述第一和第二导电层形成所述微机电装置的至少一部分。
15.如权利要求14所述的设备，其中所述导电线包括一构造成将所述导电层连接于一起的外部导电线。
16.如权利要求14所述的设备，其中所述导电线包括一构造成将所述导电层连接于一起的内部导电连接。
17.如权利要求14所述的设备，其中所述导电线包括一构造成将所述导电层连接于一起并连接至一共用电位的导电线。
18.如权利要求14所述的设备，其中所述导电线包括一构造成将所述导电层分别连接至一共用电位的导电线。
19.如权利要求14所述的设备，其中所述导电线是在一气体蚀刻室中提供。
20.如权利要求14所述的设备，其中所述至少两个导电层中的一个包括金属层。
21.如权利要求14所述的设备，其中所述至少两个导电层中的一个包括一电极。
22.如权利要求14所述的设备，其中所述导电线进一步构造成以永久终止所述至少两个导电层的电连接。
23.如权利要求14所述的设备，其中所述导电线进一步构造成在制作过程中电连接。
24.如权利要求14所述的设备，其中所述导电线进一步构造成在所述蚀刻工艺之后终止所述至少两个导电层的电连接。
CN2005800139140A 2004-05-04 2005-04-20 在微机电装置的制造中减轻蚀刻电荷的破坏 Expired - Fee Related CN1950291B (zh)

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US7476327B2 (en) 2009-01-13
CN1950291A (zh) 2007-04-18
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US20050249966A1 (en) 2005-11-10
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