CN1954411A - 粘接接合片与使用该粘接接合片的半导体装置以及其制造方法 - Google Patents
粘接接合片与使用该粘接接合片的半导体装置以及其制造方法 Download PDFInfo
- Publication number
- CN1954411A CN1954411A CNA200580015896XA CN200580015896A CN1954411A CN 1954411 A CN1954411 A CN 1954411A CN A200580015896X A CNA200580015896X A CN A200580015896XA CN 200580015896 A CN200580015896 A CN 200580015896A CN 1954411 A CN1954411 A CN 1954411A
- Authority
- CN
- China
- Prior art keywords
- bonding
- joint fastener
- knitting layer
- base material
- support base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/062—Copolymers with monomers not covered by C09J133/06
- C09J133/068—Copolymers with monomers not covered by C09J133/06 containing glycidyl groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
- C08L2666/02—Organic macromolecular compounds, natural resins, waxes or and bituminous materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
- C08L2666/02—Organic macromolecular compounds, natural resins, waxes or and bituminous materials
- C08L2666/14—Macromolecular compounds according to C08L59/00 - C08L87/00; Derivatives thereof
- C08L2666/22—Macromolecular compounds not provided for in C08L2666/16 - C08L2666/20
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2461/00—Presence of condensation polymers of aldehydes or ketones
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2463/00—Presence of epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01038—Strontium [Sr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0104—Zirconium [Zr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01045—Rhodium [Rh]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01066—Dysprosium [Dy]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01072—Hafnium [Hf]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
- Y10T428/2809—Web or sheet containing structurally defined element or component and having an adhesive outermost layer including irradiated or wave energy treated component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
- Y10T428/2852—Adhesive compositions
- Y10T428/287—Adhesive compositions including epoxy group or epoxy polymer
Abstract
一种粘接接合片,其是具有光透过性支撑基材与粘接接合层的,用于切割工序及半导体元件粘接工序双方的粘接接合片,所述粘接接合层包括:(A)含有官能团的重均分子量为10万以上的高分子量成分;(B)环氧树脂;(C)酚系环氧树脂固化剂;(D)通过照射紫外线得到的固化物的Tg为250℃以上的光反应性单体;以及(E)通过照射波长200~450nm的紫外线而产生碱及自由基的光引发剂。
Description
技术领域
本发明涉及一种粘接接合片及使用该粘接接合片的半导体装置以及其制造方法。
背景技术
以往,主要使用银胶来接合半导体元件与半导体元件搭载用支撑构件。但是,近年来随着半导体元件的小型化、高性能化,所使用的支撑构件也开始要求细密化。相对于这种要求,使用银胶就存在种种问题,例如因溢出或者半导体元件倾斜而导致在进行引线接合(wire bonding)时产生不良状况、难以控制粘接剂层的膜厚、以及粘接剂层产生空隙等。为了解决这些问题,近年来已开始使用薄膜状粘接剂。薄膜状粘接剂应用于单片粘贴方式或晶片背面粘贴方式。
在单片粘贴方式中,首先将卷轴状的粘接薄膜切割或冲切成单片后,粘接到支撑构件上。接着在所得的附粘接薄膜支撑构件上,接合通过切割工序制成单片的半导体元件,来制作附半导体元件支撑构件,然后,经过引线接合工序、密封工序等,完成半导体元件。但是,单片粘贴方式需要切出粘接薄膜后粘接到支撑构件上的专用组装装置,因此存在其组装成本比使用银胶的方法高的问题。
另一方面,在晶片背面粘贴方式中,首先,将粘接薄膜粘贴到半导体晶片上,使其贴合在切割胶带上后,通过切割工序制成单片,得到附粘接剂半导体元件。接着,将该附粘接剂半导体元件接合于支撑构件,经过随后的加热、固化、引线接合等工序,完成半导体装置。晶片背面粘贴方式,由于是将附粘接剂半导体元件接合于支撑构件,所以不需要用来将粘接薄膜制成单片的装置,可以直接使用以往的银胶用组装装置,或者如附加热盘等对装置的一部分进行改良后使用。从而,晶片背面粘贴方式,作为在使用薄膜状粘接剂的组装方法中,将组装成本抑制得比较低的方法而受到注目。
该晶片背面粘贴方式中的半导体元件的单片化,是在薄膜状粘接剂侧贴合切割胶带后,由切割工序进行的。此时,所使用的切割胶带大致分为压敏型与UV型。压敏型胶带通常是在聚氯乙烯系或聚烯烃系的底薄膜上涂敷粘合剂而成。该切割胶带需要具有充分高的粘合力,以使在进行切断时各元件不会因切割锯(dicing saw)的旋转而飞散。另一方面,切割胶带需要具有较低的粘合力,以在拾取时使粘接剂不会附着于各元件上,并且能够在不损伤元件的情况下拾取。也就是说,切割胶带根据工序不同而需要满足相反的性能。为了满足所涉及的要求,使用压敏型切割胶带时,准备粘合力公差小的符合元件尺寸与加工条件的各种粘合力的品种较多的粘接片,以在每一工序切换。此时,必须确保较多品种的库存,导致库存管理复杂。另外,在每一工序,还需要切换粘接片的作业。
但是,近年来,半导体元件(特别是CPU与内存)趋向于大容量化,半导体元件倾向于大型化。进一步,对于IC卡或记忆卡等制品来说,所使用的内存正逐渐薄型化。随着这些半导体元件的大型化与薄型化,以往的压敏型切割胶带变得无法满足切割时的固定力(高粘合力)及拾取时的剥离力(低粘合力)这样相反的要求。
最近,还广泛采用被称为UV型的切割胶带,其在切割时具有高粘合力,而在拾取前通过照射紫外线(UV)变成低粘合力,从而满足上述相反的要求。
但是,在使用UV型的切割胶带的晶片背面粘贴方式中,至切割工序为止需要进行2次的薄膜粘贴工序,存在作业繁杂的问题。为了解决这样的问题,提出过种种同时具有晶片固定功能与半导体元件粘接功能的晶片粘贴用粘合片(例如参照专利文献1:特许第1987034号公报、专利文献2:特开平8-239636号公报、专利文献3:特开平10-8001号公报、专利文献4:特开2002-212522号公报、专利文献5:特开2004-43760号公报)。这些片是具有以一层实现上述粘接薄膜作用与切割胶带作用的粘接接合层的粘接接合片。使用这些片时,可以实现所谓的直接管心焊接(die bonding),也就是说在切割工序后,在粘接接合剂残存于晶片背面的状态下,拾取半导体元件,将其安装到引线框等后,通过加热等固化粘接,因此可以省略涂敷粘接剂的工序。
发明内容
发明要解决的技术问题
但是,例如揭示于特许第1987034号公报及特开平8-239636号公报的粘接片,固化物中没有能够显示优良耐热性的物质,所以在组装半导体封装后的耐热性等可靠性方面尚有改善的余地。
另外,例如揭示于特许第1987034号公报、特开平8-239636号公报及特开平10-8001号公报的粘接接合片中,为了提高保存稳定性配合有热活性型潜在性环氧树脂固化剂。然而,由于其固化剂为吸湿性,所以会因周围环境的湿气促进粘接片的固化,其结果可使用时间减少,所以还是需要注意保存条件等。
进一步,例如揭示于特开平10-8001号公报、特开2002-212522号公报及特开2004-43760号公报的粘接片,使用种种光反应性单体,其目的在于通过光照射使粘接接合层发生固化,以降低与半导体晶片的粘附力。然而,其光反应性单体由于照射紫外线后的耐热性较低,所以加热时的粘接力(热粘接力)及耐回流性尚有改善的余地。
如此,以往的粘接接合片虽然有利于半导体装置制造工序的简化,但并不能充分地满足半导体封装中要求的特性,例如即使在苛刻的湿热条件(例如85℃、85%RH、168小时)后的IR回流中,也可以保持充分的粘接性,显示良好的耐回流性。
本发明是鉴于上述现有技术中存在的问题而进行的,目的在于提供一种在切割工序中能够充分有效地显示作为切割胶带的功能,而在接合半导体元件与支撑构件的工序中,则具有十分优良的连接可靠性的粘接接合片。另外,本发明的目的在于提供一种具有在半导体元件搭载用支撑构件上安装热膨胀系数差较大的半导体元件时所要求的耐热性及耐湿性,且作业性优良的粘接接合片。本发明的再一个目的在于提供一种可以简化半导体装置制造工序的制造方法。
解决问题的技术方案
本发明涉及以下内容:
1.一种粘接接合片,其是具有光透过性支撑基材与粘接接合层的,用于切割工序及半导体元件粘接工序双方的粘接接合片,所述粘接接合层包括:
(A)含有官能团的重均分子量为10万以上的高分子量成分;
(B)环氧树脂;
(C)酚系环氧树脂固化剂;
(D)通过照射紫外线得到的固化物的Tg为250℃以上的光反应性单体;以及
(E)通过照射波长200~450nm的紫外线而产生碱及自由基的光引发剂。
2.上述的粘接接合片,其中,所述(A)含有官能团的重均分子量为10万以上的高分子量成分,是含有占高分子量成分总量的0.5~6质量%的含环氧基重复单元的(甲基)丙烯酸类共聚物。
3.上述的粘接接合片,其中,含有100重量份的所述(A)含有官能团的重均分子量为10万以上的高分子量成分、及5~250重量份的所述(B)环氧树脂;所含有的所述(C)酚系环氧树脂固化剂的量为,相对于所述(B)环氧树脂中的每1个环氧基,所述(C)酚系环氧树脂固化剂中的酚性羟基的当量比在0.5~1.5的范围;含有5~100重量份的所述(D)通过照射紫外线得到的固化物的Tg为250℃以上的光反应性单体、以及0.1~20重量份的所述(E)通过照射波长200~450nm的紫外线而产生碱及自由基的光引发剂。
4.上述的粘接接合片,其中,所述支撑基材的表面自由能为50mN/m以下。
5.上述的粘接接合片,其中,所述支撑基材在25℃的弹性模量为1000MPa以下。
6.上述的粘接接合片,其中,所述支撑基材在常温的屈服伸长为20%以上。
7.上述的粘接接合片,其中,对于所述支撑基材的所述粘接接合层照射紫外线后的90°剥离粘接强度为10N/m以下。
8.上述的粘接接合片,其中,所述粘接接合层在25℃的胶粘强度为15gf以上。
9.上述的粘接接合片,其中,所述支撑基材满足下述公式(a)所示的条件。(制作粘接接合片时的复制温度(T1)×复制温度下的线膨胀系数(α1))-(常温(T2)×常温下的线膨胀系数(α2))≤7000ppm(a)
10.一种半导体装置,具备使用上述的粘接接合片,粘接半导体元件与半导体搭载用支撑构件而成的构件。
11.一种半导体装置的制造方法,包括以下工序:
(1)将上述的具有粘接接合层和支撑基材的粘接接合片,经由所述粘接接合层粘贴于半导体晶片上的工序;
(2)切割所述半导体晶片,形成附粘接接合层芯片的工序;
(3)对所述附粘接接合层芯片上的所述粘接接合层照射紫外线,固化其粘接接合层,形成附粘接接合层半导体元件,将所述支撑基材从该附粘接接合层半导体元件上剥离的工序;以及
(4)经由所述粘接接合层,粘接所述剥离支撑基材之后的所述附粘接接合层半导体元件与半导体元件搭载用支撑构件的工序。
有益效果
本发明的光固型粘接接合片,由于具有上述构成,其常温粘贴性、切割性及耐回流开裂性优异,所以可适宜地作为用来固定电子材料的粘接接合树脂。
附图说明
图1是表示本发明的粘接接合片的剖面模式图。
图2是表示本发明的粘接接合片的例的平面图。
图3是表示图2的(b)的X-X剖面图。
图4是表示关于本发明的粘接接合片的层构成的一例的剖面模式图。
图5是表示接触角的测定方法的剖面模式图。
图6是表示弹性模量的测定方法的模式图及表示屈服伸长的定义方法的图表。
图7是表示将本发明的粘接接合片层压于晶片上的样子的剖面模式图。
图8是表示90°剥离强度测定方法的立体图及其剖面模式图。
图9是表示胶粘负荷测定方法的剖面模式图。
图10是表示关于本发明的粘接接合片的使用形态的一例的剖面模式图。
符号说明
1:粘接接合片
2:支撑基材
3:粘接接合层
4:保护薄膜
5:周边部
6:液体试样(水及碘化亚甲基)
7:测定样品
8:环
9:半导体晶片
10:切割锯
11:吸嘴
12:半导体元件搭载用基板
13:密封材料
14:焊珠
15:引线
16:半导体装置
17:探针
91、92、93:半导体芯片
A:半导体晶片
θ:接触角
具体实施方式
本发明的粘接接合片1,具有如图1所示在光透过性支撑基材2上面设置了粘接接合层3的构造,也可以因需要而层叠粘接接合层的保护薄膜4。图2是表示本发明的粘接接合片的例的平面图。可以是如图2(a)所示在整个支撑基材上设置粘接接合层,也可以是图2(b)所示的粘接接合层被预先加工成作为被粘接对象的半导体晶片的形状(图2中未图示保护薄膜)。
图3是表示图2的(b)的X-X剖面图。在这些图中,多片粘接接合层3被预先切成比半导体晶片稍大的形状(预切),层叠在长条的支撑基材2上。周边部5是将该长条的粘接接合片卷成滚筒状等时,为了防止仅在具有粘接接合层的片的中心部发生膨胀而设置的厚度调整部。厚度调整部可以是与粘接接合层3相同的材质,也可以是在粘接接合层3上层叠非常薄的层而成,或者也可以是由完全不同的材质形成。
作成这种长条的片时,粘接接合片的宽度只要是可以粘贴半导体晶片即可,并没有特别的限制。从作业性及生产率等方面来看,该粘接接合片的宽度以比8英寸晶片、12英寸晶片等的大小宽1~10cm较佳,以宽3~8cm更佳。粘接接合片的长度可以根据切割装置等自由地设定。但是,粘接接合片的长度若太短,则交换变得繁杂,若太长则有可能勒紧滚筒中心部的粘接接合片而导致厚度与形状变形。因此,粘接接合片的长度通常以10m~200m较佳,30~70m程度更佳。
在本发明的粘接接合片中,作为粘接接合层的具体例,可举出包括(A)含有官能团的重均分子量为10万以上的高分子量成分、(B)环氧树脂、(C)酚系环氧树脂固化剂、(D)通过照射紫外线得到的固化物的Tg为250℃以上的光反应性单体及(E)通过照射波长200~450nm的紫外线而产生碱及自由基的光引发剂。下面,在本说明书中有时将这些成分分别简称为(A)高分子量成分、(B)环氧树脂、(C)环氧树脂固化剂、(D)光反应性单体及(E)光引发剂,或只是记为(A)成分、(B)成分、(C)成分、(D)成分及(E)成分。
至于如上所述的粘接接合片可以解决上述课题的原因,被推测为如下(1)~(3)所述。首先,(1)认为是由于(A)含有官能团的重均分子量为10万以上的高分子量成分与(B)环氧树脂不相溶,容易获得所谓的海岛构造,所以可以得到良好的低弹性、粘接性、作业性及高温时的可靠性。另外,(2)认为是由于并用(C)酚系环氧树脂固化剂与(D)通过照射紫外线得到的固化物的Tg为250℃以上的光反应性单体,所以耐热性、耐回流性优良。进一步,(3)认为是因为可以得到反应性与保存稳定性并存的薄膜。也就是说,认为是由于在(C)环氧树脂固化剂及(D)光反应性单体存在的条件下,使用(E)通过照射波长200~450nm的紫外线而产生碱及自由基的光引发剂,所以在没有光照射的状态下,环氧树脂及光反应性单体几乎不反应,因此保存稳定性优良。另一方面,认为如果照射光,则在促进(D)光反应单体的光反应的同时,产生环氧树脂的固化促进剂,所以如果在其状态进行加热,就可以顺利地进行环氧树脂的固化反应。
以下,针对各成分进行更具体的说明。
作为(A)含有官能团的重均分子量为10万以上的高分子量成分,从提高粘接性的方面考虑,优选含有缩水甘油基等环氧基、丙烯酰基、甲基丙烯酰基、羧基、羟基、环硫化物(episulphide)基等官能团,其中,从交联性的方面考虑更优选缩水甘油基。具体而言,(A)成分可以举出作为原料单体使用丙烯酸缩水甘油酯或甲基丙烯酸缩水甘油酯进行共聚而得到的,重均分子量为10万以上的含有缩水甘油基的(甲基)丙烯酸类共聚物。另外,从耐回流性的方面考虑,优选(A)成分为不与环氧树脂相溶。但是,相溶性仅靠(A)高分子量成分的特性是不能决定的,所以应该选择两者不相溶的组合。另外,在本发明中,上述含有缩水甘油基的(甲基)丙烯酸类共聚物,是表示含有缩水甘油基的丙烯酸类共聚物与含有缩水甘油基的甲基丙烯酸类共聚物双方的用语。
作为这样的共聚物,例如可以使用(甲基)丙烯酸酯共聚物、丙烯酸橡胶等,优选丙烯酸橡胶。丙烯酸橡胶是以丙烯酸酯作为主要成分,主要是由丙烯酸丁酯及丙烯腈等的共聚物、或丙烯酸乙酯及丙烯腈等的共聚物等构成的橡胶。作为共聚物单体,例如可举出丙烯酸丁酯、丙烯酸甲酯、丙烯酸乙酯、甲基丙烯酸甲酯、甲基丙烯酸乙酯、丙烯腈等。
选择缩水甘油基作为官能团时,优选使用丙烯酸缩水甘油酯或甲基丙烯酸缩水甘油酯等作为共聚物单体。这种重均分子量为10万以上的含缩水甘油基(甲基)丙烯酸类共聚物,可以是从上述单体中选择适宜的单体来制造,也可以是使用市场上销售的产品(例如Nagase Chemtex Corporation公司制HTR-860P-3、HTR-860P-5等)。
对于(A)含有官能团的重均分子量为10万以上的高分子量成分来说,官能团的数目会影响到交联密度,所以是重要的,依据使用的树脂也不同。例如所得高分子量成分为多种单体的共聚物时,作为原料使用的含官能团单体的量,优选相对于共聚物总量为0.5~6.0质量%程度。
使用含缩水甘油基丙烯酸类共聚物作为(A)成分时,作为原料使用的丙烯酸缩水甘油酯或甲基丙烯酸缩水甘油酯等的含缩水甘油基单体的量,相对于共聚物总量以0.5~0.6质量%较佳,以0.5~5.0质量%更佳,以0.8~5.0质量%最佳。含缩水甘油基单体的量若处于该范围,缩水甘油基就发生缓和的交联,所以能够确保粘接力,同时还防止发生凝胶化。另外,由于会变得与(B)环氧树脂不相溶,所以应力缓和性优良。
在合成含缩水甘油基(甲基)丙烯酸类共聚物时,也可以使用将其它官能团引入丙烯酸缩水甘油酯或甲基丙烯酸缩水甘油酯等而成的单体。此时的混合比率,考虑含缩水甘油基(甲基)丙烯酸类共聚物的玻璃转移温度(以下称“Tg”)来决定,其Tg优选为-10℃以上。这是因为Tg若为-10℃以上,则在B阶状态的粘接接合层的胶粘性就适当,操作性方面不会产生问题。
使上述单体聚合,得到含缩水甘油基丙烯酸类聚合物,作为(A)包含官能团的重均分子量为10万以上的高分子量成分时,其聚合方法没有特别的限制,例如可以使用成珠聚合、溶液聚合等方法。
在本发明中,(A)高分子量成分的重均分子量为10万以上,但以30万~300万较佳,以40万~250万更佳,以50万~200万最佳。重均分子量若位于此范围,则制成片状或薄膜状时的强度、可挠性及胶粘性变得适当,另外,由于流动性变得适当,所以可以确保配线的电路填充性。而且,在本发明中,所谓重均分子量是以凝胶渗透色谱法进行测定,使用标准聚苯乙烯标准曲线换算得到的值。
使用于本发明的(B)环氧树脂,只要固化而具有粘接作用即可,并没有特别限制,例如可以广泛使用揭示于环氧树脂手册(新保正树编,日刊工业新闻社)等的环氧树脂。具体而言,例如可以使用双酚A型环氧树脂等二官能环氧树脂、苯酚酚醛清漆型环氧树脂与甲酚酚醛清漆型环氧树脂等酚醛清漆型环氧树脂等。另外,可以使用众所周知的多官能环氧树脂、缩水甘油胺型环氧树脂、含杂环环氧树脂或脂环族环氧树脂等。
作为双酚A型环氧树脂,可举出油化壳牌环氧树脂公司制EPIKOTE807、815、825、827、828、834、1001、1004、1007、1009,Dow化学公司制DER-330、301、361,东都化成株式会社制YD8125、YDF8170等。作为苯酚酚醛清漆型环氧树脂,可举出油化壳牌环氧树脂公司制EPIKOTE152、154,日本化药株式会社制EPPN-201,Dow化学公司制DEN-438等。另外,作为邻甲酚酚醛清漆型环氧树脂,可举出日本化药株式会社制EOCN-102S、103S、104S、1012、1025、1027,东都化成株式会社制YDCN701、702、703、704等。作为多官能环氧树脂,可举出油化壳牌环氧树脂公司制Epon1031S,汽巴特殊化学品公司制爱牢达0163,Nagase化成株式会社制DENAKORU EX-611、614、614B、622、512、521、421、411、321等。作为胺型环氧树脂,可举出油化壳牌环氧树脂公司制EPIKOTE 604,东都化成株式会社制YH-434,三菱瓦斯化学株式会社制TETRAD-X、TETRAD-C,住友化学株式会社制ELM-120等。作为含杂环环氧树脂,可举出汽巴特殊化学品公司制爱牢达PT810等,UCC公司制ERL4234、4299、4221、4206等。这些环氧树脂可以单独或组合2种以上使用。
另外,在本发明中,为了赋予高粘接力,优选使用双酚A型环氧树脂及苯酚酚醛清漆型环氧树脂作为(B)环氧树脂。
本发明的(B)环氧树脂的使用量,相对于(A)含有官能团的重均分子量为10万以上的高分子量成分100重量份,以5~250重量份较佳。(B)环氧树脂的使用量若位于此范围,则可以确保弹性模量及抑制成型时的流动性,另外,也可以充分地得到在高温的操作性。(B)环氧树脂的使用量以10~100重量份更佳,以20~50重量份特佳。
如上所述,(B)环氧树脂优选不与(A)高分子量成分相溶。
使用于本发明的(C)酚系环氧树脂固化剂,通过与环氧树脂组合,所得粘接接合层在高温高压下的耐冲击性优异,即使在苛刻的热吸湿条件下也可以保持充分的粘接物性,因此是有效的。
作为这样的(C)成分,例如可举出苯酚酚醛清漆树脂、双酚A酚醛清漆树脂或甲酚酚醛清漆树脂等酚树脂等。更具体而言,例如可举出大日本油墨化学工业株式会社制商品名:PHENORITE LF2882、PHENORITE LF2822、PHENORITE TD-2090、PHENORITE TD-2149、PHENORITE VH-4150、PHENORITE VH4170等,这些可以单独或组合2种以上使用。
在本发明中,为了赋予粘接层以吸湿时的耐电蚀性,(C)成分的使用量,以相对于(B)环氧树脂的1个环氧基,(C)酚系环氧树脂固化剂的酚性羟基的当量比成为0.5~1.5的范围较佳,形成0.8~1.2的量更佳。当量比过大或过小,都会导致树脂的固化(交联)不充分,玻璃转移温度不会变高,使固化剂的耐湿性与高温的电气特性等有劣化的倾向。
就本发明的粘接接合片来说,如果使用(D)通过照射紫外线得到的固化物的Tg为250℃以上的光反应性单体,则照射紫外线后的耐热性较高,所以热时粘接力及耐回流性变佳。测定(D)成分的Tg的方法如以下所述。首先,在(D)成分中添加光引发剂,并照射紫外线,将得到的固化物成形为5×5mm程度大小的矩形,制作样品。将制作的样品由日本精工仪器株式会社制的热分析系统(商品名:EXSTRA6000),利用压缩模式测定而确定Tg。Tg若为250℃以上,则粘接接合层的耐热性将非常优良,可以承受耐回流开裂性评价中的250℃以上的热。因此,粘接接合层的耐回流开裂性良好。由此点,(D)成分的固化物的Tg以200℃以上较佳,250℃以上更佳。进一步,该Tg以对应无铅焊料的260℃以上较佳。另外,Tg若为太高,则照射紫外线后的粘接接合片在常温下的粘贴性会有劣化的倾向,所以上限以350℃程度较佳。
作为(D)成分的具体例,可举出例如季戊四醇三丙烯酸酯、二季戊四醇六丙烯酸酯、二季戊四醇五丙烯酸酯、三羟甲基丙烷三丙烯酸酯、三聚异氰酸环氧乙烷改性三丙烯酸酯、二三羟甲基丙烷四丙烯酸酯、季戊四醇四丙烯酸酯等多官能丙烯酸酯等。这些光反应性单体,可以单独或组合2种以上使用。从照射紫外线后的残存单体的观点来看,即使为多官能,也以二季戊四醇六丙烯酸酯与二季戊四醇五丙烯酸酯等较佳。具体而言,可举出新中村化学公司制A-DPH、A-9300等。
而且,使用多种(D)成分时,其Tg是用上述测定方法测定其混合物时的Tg,而不需要各单体的Tg在250℃以上。
本发明的(D)通过照射紫外线得到的固化物的Tg为250℃以上的光反应性单体的使用量,相对于(A)含有官能团的重均分子量为10万以上的高分子量成分100重量份,以5~100重量份较佳。配合量若为5重量份以上,则容易发生照射紫外线引起的光反应性单体的聚合反应,所以存在拾取性提高的倾向。相反,若多于100重量份,则高分子量成分的低弹性起不到作用,薄膜变脆,存在耐湿性与高温的电气特性等劣化的倾向。由同样的观点来看,(D)成分的使用量相对于(A)成分100重量份,以10~70重量份更佳,以20~50重量份最佳。
本发明的(E)通过照射波长200~450nm的紫外线而产生碱与自由基的光引发剂,一般是被称为α-氨基酮化合物的物质。这种化合物被揭示于例如J.Photopolym.Sci.Technol,V0l.13,No12001等,若照射紫外线,则会发生如下式所示的反应。
α-氨基酮化合物,由于在照射紫外线之前并不存在自由基,所以不会发生光反应性单体的聚合反应。另外,由于空间位阻所以也不会促进热固性树脂的固化。但是,通过照射紫外线,引起α-氨基酮化合物的离解,随着自由基的产生,发生光反应性单体的聚合反应。另外,通过α-氨基酮化合物的离解,空间位阻降低,形成活性化胺。因此,胺将具有促进热固性树脂的固化的作用,认为通过之后的加热起到促进固化的作用。这样,由于在照射紫外线之前,自由基与活性化胺较难存在,所以就可以提供在室温的保存稳定性非常优良的粘接接合片。另外,由于通过照射紫外线产生的自由基及胺的构造,会影响光反应性单体与环氧树脂的固化速度,所以可以根据所使用的(B)成分、(C)成分及(D)成分的种类,来决定(E)光碱产生剂。
作为(E)光碱产生剂,可以使用例如2-甲基-1(4-(硫代甲基))苯基-2-吗啉代基丙烷-1-酮(汽巴特殊化学品公司制Irgacure 907)、2-苄基-2-二甲基氨基-1-(4-吗啉代基苯基)-丁酮-1-酮(汽巴特殊化学品公司制Irgacure 369)、六芳基双咪唑衍生物(卤原子、烷氧基、硝基、氰基等取代基取代在苯基上也可)、苯并异恶唑酮衍生物等。
除了上述碱产生剂外,也可以使用通过光Fries重排、光Cloisen重排与Curtius重排、Stevens重排产生碱的方法。
上述碱产生剂除了作为分子量500以下的低分子化合物使用外,使用导入高分子的主链及侧链的化合物也可。此时的分子量,从作为粘接接合剂的粘接接合性、流动性的观点来看,以重均分子量为1000~100000较佳,以5000~30000更佳。
在本发明的粘接接合片中,(E)光碱产生剂的使用量,对于(A)含有官能团的重均分子量为10万以上的高分子量成分100重量份,以0.1~20重量份较佳。若比0.1重量份少,则反应性差而有可能使应当聚合的单体残留下来。若比20重量份多,则聚合反应引起的分子量增加会不佳,存在较多低分子量成分,所以有可能对耐回流性带来影响。从而,(E)成分的使用量,更佳的是0.5~15重量份,最佳的是1~5重量份。
其次,除了上述(A)~(E)成分以外,针对可含在粘接接合层的成分加以说明。形成本发明的粘接接合片的粘接接合层中,出于提高可挠性与耐回流开裂性的目的,可以添加(F)与环氧树脂具有相溶性的高分子量树脂。作为这种高分子量树脂,从提高可靠性的观点来讲,优选为不与(A)高分子量成分相溶的树脂,例如可举出苯氧基树脂、高分子量环氧树脂、超高分子量环氧树脂等。这些也可以单独或组合2种以上使用。当使用与(A)高分子量成分具有相溶性的树脂作为(B)环氧树脂时,若使用(F)与环氧树脂具有相溶性的高分子量树脂,则由于(B)环氧树脂更容易与(F)成分相溶,所以结果有可能将(B)环氧树脂与(A)高分子量成分变成不相溶。
与环氧树脂具有相溶性的高分子量树脂的使用量,相对于环氧树脂及酚系环氧树脂固化剂的合计100重量份,以40重量份以下较佳。若为此范围,则可以确保环氧树脂层的Tg。
另外,在形成本发明的粘接接合片的粘接接合层中,出于提高其操作性、提高热传导性、调整溶融粘度及赋予触变性等的目的,也可以添加无机填料。作为无机填料,没有特别的限制,可举出例如氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、硼酸铝晶须、氮化硼、结晶性二氧化硅、非结晶性二氧化硅等。填料的形状没有特别的限制。这些填料可以单独或组合2种以上使用。
其中,为了提高热传导性,以氧化铝、氮化铝、氮化硼、结晶性二氧化硅、非结晶性二氧化硅等无机填料较佳。另外,为了调整溶融粘度及赋予触变性,以氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、结晶性二氧化硅、非结晶性二氧化硅等无机填料较佳。另外,为了提高薄膜热时的流动性,使用纳米填料更佳。
无机填料的使用量,相对于粘接接合层100重量份,以1~40重量份较佳。若为1重量份以下,则存在无法得到添加效果的倾向,若超过40重量份,则可能引起粘接剂层的贮藏弹性模量上升、粘接性降低、因残存空隙而使电气特性降低等问题。
另外,在形成本发明的粘接接合片的粘接接合层中,为了使不同材料之间的界面良好地结合,也可以添加各种偶合剂。作为偶合剂,可举出例如硅烷系、钛系、铝系等。
作为上述硅烷系偶合剂,没有特别的限制,可以使用γ-甲基丙烯酰氧基丙基三甲氧基硅烷、γ-甲基丙烯酰氧基丙基甲基二甲氧基硅烷、γ-巯基丙基三甲氧基硅烷、γ-巯基丙基三乙氧基硅烷、3-氨基丙基甲基二乙氧基硅烷、3-脲基丙基三乙氧基硅烷、3-脲基丙基三甲氧基硅烷等,也可以单独或组合2种以上使用。具体的有日本尤尼卡公司制A-189、A-1160。
上述偶合剂的使用量,从效果与耐热性及成本方面来看,相对于(A)含有官能团的重均分子量为10万以上的高分子量成分100重量份,以0.01~10重量份较佳。
在形成本发明的粘接接合片的粘接接合层中,为了吸附离子性杂质,提高吸湿时的绝缘可靠性,可以进一步添加离子捕获剂。作为这样的离子捕获剂,没有特别的限制,可举出例如三嗪硫醇化合物、双酚系还原剂等可防止铜变成离子溶出的作为铜害防止剂的化合物、锆系、锑铋系镁铝化合物等无机离子吸附剂等。
上述离子捕获剂的使用量,从添加带来的效果与耐热性、成本等观点来看,对于(A)含有官能团的重均分子量为10万以上的高分子量成分100重量份,以0.1~10重量份较佳。
(粘接接合片的制造方法)
本发明的粘接接合片,通过将形成粘接接合片的组合物溶解或分散于溶剂中制成漆,涂敷于基材薄膜上,加热去除溶剂,就可以得到。
也就是说,如图4所示,首先,在保护薄膜4(也称为脱模片)上,采用刮刀涂层法、辊涂法、喷雾涂层法、凹版涂层法、棒材涂层法、帘幕式涂层法等众所周知的方法,涂敷将由上述成分构成的粘接接合剂的原料树脂组合物溶解于有机溶剂等制成漆的物质,干燥,形成粘接接合层3。然后,层叠光透过性支撑基材2,就可以得到由脱模片(保护薄膜)、粘接接合层及光透过性支撑基材形成的粘接接合片1。或者,以同样的方法在光透过性支撑基材上直接涂敷粘接接合剂组合物,干燥,层叠保护薄膜,就可以得到由保护薄膜、粘接接合层及光透过性支撑基材形成的粘接接合片。
作为使用于本发明的粘接接合片的光透过性支撑基材,可举出例如聚四氟乙烯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜等塑料膜等。
作为使用于本发明的粘接接合片的光透过性支撑基材,从支撑基材与粘接接合层的粘附力的方面来看,表面自由能优选为20~50mN/m,进一步优选为30~45mN/m。该表面自由能若比20mN/m低,则光透过性支撑基材与粘接接合层的界面的粘附力降低,在欲剥离保护膜时,粘接接合层的一部分有可能从支撑基材上剥离。另外,若比50mN/m大,则曝光后的支撑基材-粘接接合层与粘接接合层-保护薄膜之间较难产生剥离强度差,晶片固定强度变得过大,拾取性有可能变差。
这里,在本发明中,关于表面自由能测定,是使用协和界面化学株式会社制CA-Z型仪器,从对于测定样品7的,由液体试样6(水、碘化亚甲基)构成的液体试样6的接触角θ的实测值(参照图5),按照下述式(1)~(3)算出的值。
72.8(1+cosθ1)=〔(21.8)1/2·(γd)1/2+(51.0)1/2·(γP)1/2) (1)
50.8(1+cosθ2)=〔(48.5)1/2·(γd)1/2+(2.3)1/2·(γP)1/2〕 (2)
R=rd+γP (3)
(式中,上述θ1是对于水的接触角(deg)、θ2是对于碘化亚甲基的接触角(deg)、γ为表面自由能、γd为表面自由能的分散成分、γp为表面自由能的极性成分。)
另外,作为使用于本发明的粘接接合片的光透过性支撑基材,从拾取性与切割性进而从复制性等方面来看,支撑基材的25℃的弹性模量以10~2000MPa较佳。若比10MPa小,则具有较难维持作为支撑基材的性能的倾向,若超过2000MPa,则由于具有较难复制的倾向,所以有可能会对后来的拾取性造成影响。上述弹性模量从切割性的观点考虑以50~1000MPa较佳,以100~500MPa更佳。而且,在本发明中,光透过性支撑基材的25℃的弹性模量是如下确定的。首先,使用Orientec株式会社制TENSILON,将样品尺寸1cm×5cm的矩形薄膜在长度方向的两端各1cm处固定,以测定速度:100mm/min进行拉伸强度测定(参照图6的(a))。使用横轴:伸长/%、纵轴:应力/MPa的测定结果(参照图6的(b)),将连接测定样品开始拉伸时的点(原点)与对应于拉伸1mm时(3.3%)的点A的应力(点B)而成的直线的斜率作为支撑基材的弹性模量。
进一步,作为使用于本发明的粘接接合片的光透过性支撑基材,为了平滑地膨胀需要考虑屈服伸长。所谓屈服伸长,是以百分率表示拉伸特性中的屈服点的伸长率的值。屈服伸长的值,以5~100%以上较佳,以20~80%以上更佳。屈服伸长若不到5%,则存在影响拾取性的倾向。这里,在本发明中,是将上述弹性模量测定的测定结果(图6(b))中的,对应于应力的第一峰值(点C)的伸长(点D)的值,作为光透过性支撑基材的屈服伸长。
而且,作为使用于本发明的粘接接合片的光透过性支撑基材,若考虑作为片制品进行操作的情况等,则需要考虑线膨胀系数。支撑基材的线膨胀系数,从翘曲等观点来看,优选满足下述式(a)的条件。
(制作粘接接合片时的复制温度(T1)×复制温度下的线膨胀系数(α1))-(常温(T2)×常温下的线膨胀系数(α2))≤7000(单位;ppm) (a)
公式(a)的左边若超过7000ppm,则作为片制品使用时翘曲就会过大而导致操作性降低。由同样的观点,上述公式(a)的左边若为5000ppm以下则更佳,3000ppm以下则最佳。而且,在本发明中,线膨胀系数α1、α2(单位:ppm/℃),是采用日本精工仪器株式会社制热分析系统(商品名:EXSTRA6000),使用样品尺寸4mm×1cm的矩形薄膜,以升温速度:10℃/min、测定温度:从-20℃至180℃,按照拉伸模式测定而确定的。另外,公式(a)的“常温”表示25℃。
另外,作为上述用来制成漆的溶剂,只要是有机溶剂则没有特别的限制,但可以从沸点考虑制作薄膜时的挥发性等来确定。具体而言,例如甲醇、乙醇、2-甲氧基乙醇、2-乙氧基乙醇、2-丁氧基乙醇、甲基乙基酮、丙酮、甲基异丁基酮、甲苯、二甲苯等沸点比较低的溶剂,在制作薄膜时薄膜的固化较难进行,因此是优选的。另外,出于提高涂膜性等目的,以使用例如二甲基乙酰胺、二甲基甲酰胺、N-甲基吡咯烷酮、环己酮等沸点比较高的溶剂较佳。这些溶剂可以单独或组合2种以上使用。
在添加无机填料时的漆的制造中,考虑无机填料的分散性,以使用研磨机、三根辊、球磨机及珠磨机等较佳,另外,也可以组合这些使用。另外,预先混合无机填料与低分子量的原料后,配合高分子量的原料的话,还可以缩短混合的时间。另外,制成漆后,还可以通过真空脱气等去除漆中的气泡。
粘接接合层的厚度虽没有特别限制,但以3~200μm较佳。若比3μm薄,则存在应力缓和效果欠缺的倾向,若比200μm厚,则不仅不经济,而且不符合半导体装置小型化的要求。
支撑基材的厚度虽没有特别限制,但以5~250μm较佳。若比5μm薄,则在切割时在支撑基材上制作切口时,支撑基材有可能会断开,若比250μm厚,则不经济,所以是不优选的。
粘接接合层与支撑基板的合计厚度通常为10~250μm程度。支撑基材的厚度若设定成与粘接接合层相同或者稍微厚,则作业性佳。作为具体的厚度的组合,可以举出粘接接合层/支撑基材(μm)为5/25、10/30、10/50、25/50、50/50、50/75等,可以根据使用的条件与装置等适当决定。另外,本发明的粘接接合片,为了得到所希望的厚度,使加热时的流动性提高,也可以在粘接接合片的粘接接合层侧,粘贴2张以上另行制成的粘接接合剂。此时,需要有不至于发生粘接接合层之间的剥离的粘贴条件。
若对如以上说明的构成的粘接接合片照射紫外线,则在照射紫外线后,支撑基材-粘接接合层间的粘接力将大大地降低,能够容易地在保持粘接接合层于半导体元件上的状态下,从支撑基材上拾取该粘接接合片。
可以进行(测定温度25℃的)90°剥离粘接强度测定,作为测量本发明的粘接接合片的拾取性的简易评价。在本发明中,90°剥离粘接强度测定可以是如下进行。首先如图8(a)所示,将粘接接合片1层压至晶片A上,然后制作1cm宽度的切口,切开支撑基材2,照射紫外线。然后,如图8(b)所示,以拉伸速度:300m/min进行粘接接合层/支撑基材界面的90°剥离拉伸试验,测定90°剥离粘接强度。如此测定的90°剥离粘接强度,从拾取性的观点来看,以20N/m以下较佳,以10N/m以下更佳。
另外,也可以进行胶粘负荷测定(图9)作为测量本发明的粘接接合片的常温粘贴性的简易评价。从操作性及常温层压性的观点来看,胶粘负荷以5~400gf较佳,进一步更佳的是10~200gf。本发明的胶粘负荷测定,是使用RHESCA公司制胶粘度试验机,利用揭示于JISZ0237-1991的方法,以测定条件:探针17的直径5.1mmφ、剥离速度:10mm/sec、接触负荷100gf/cm2、接触时间1s,在25℃的环境下进行。
本发明的粘接接合片是在切割工序完成后,把紫外线(UV)照射到粘接接合片上,使具有紫外线聚合性的粘接接合片聚合固化,从而降低粘接接合片与基材界面的粘接力,拾取半导体元件。以下利用图10说明本发明的粘接接合片的使用方法的一例。
图10(a)中图示了粘接接合片1,该粘接接合片1具备支撑基材2与在其上预先成形的形状与晶片相同且面积稍大于晶片的粘接接合层3。
其次,在粘接接合片1的粘接接合层3上,以室温或边加热边粘贴需要进行切割加工的半导体晶片9(图10(b)),用切割锯10切割(图10(c)),根据需要可以加上清洗、干燥的工序。此时,由于半导体元件可以充分地粘接和保持在粘接接合片上,所以在上述各工序期间,半导体元件不会脱落。
接着,将放射线照射到粘接接合片上,使具有由放射线进行聚合的性质的粘接接合片聚合固化(图10(d))。作为放射线,可举出例如紫外线、电子射线、红外线等。在图10(d)表示了利用紫外线的例子。对于粘接接合片的紫外线照射,是从具有紫外线聚合性的粘接接合片的面进行,照度与照射量根据粘接接合片的组成而有所浮动,但照度通常为3~100mW/cm2程度,照射量通常为80~1000mJ程度,目标为光反应性单体基本上聚合程度的照射量。此时,粘接接合片的支撑基材2必须具有紫外线透过性。也就是说,在本发明中所谓“光透过性支撑基材”是指可透过在该阶段使用的放射线的支撑基材。
然后,用吸嘴把切割得到的半导体元件91、92及93,与紫外线固化后的粘接接合层一起拾取(图10(e)),在室温或边加热至40~150℃边压接到半导体元件搭载用支撑构件12上(图10(f)),加热。通过加热,粘接接合层发挥出可靠的粘接力,完成半导体元件91与半导体元件搭载用支撑构件12的粘接。而且,例如图10(g)所示,通常半导体装置在之后要经过打入(安装)引线15的工序、用密封材料16密封的工序、与设置焊珠14的外部基板(主基板)电气连接的工序等,由于途中经过1次或多次受热过程,所以利用该受热过程也可以进一步加热固化上述粘接接合层。
实施例
以下,利用实施例说明本发明,但本发明并不限于这些实施例。
(实施例1)
加入HTR-860-P3(帝国化学产业株式会社制商品名,含缩水甘油基丙烯酸橡胶,分子量100万,Tg-7℃)100重量份、YDCN-703(东都化成株式会社制商品名,邻甲酚酚醛清漆型环氧树脂,环氧当量210)5.4重量份、YDF-8170C(东都化成株式会社制商品名,双酚F型环氧树脂,环氧当量157)16.2重量份、プライオ一フェンLF2882(大日本油墨化学工业株式会社制商品名,双酚A酚醛清漆树脂)15.3重量份、NUCA-189(日本尤尼卡株式会社制商品名,γ-巯基丙基三甲氧基硅烷)0.1重量份、NUCA-1160(日本尤尼卡株式会社制商品名,γ-脲基丙基三乙氧基硅烷)0.3重量份、A-DPH(新中村化学工业株式会社制商品名,二季戊四醇六丙烯酸酯)30重量份、IRGACURE369(汽巴特殊化学品公司制商品名,2-苄基-2-二甲基氨基-1-(4-吗啉代基苯基)-丁酮-1-酮:I-369)1.5重量份、环己酮,搅拌混合,真空脱气。将粘接剂漆涂敷于作为保护膜的厚度75μm的表面脱模处理聚对苯二甲酸乙二醇酯(帝人株式会社制,帝人涤特纶膜:A-31)上,以80℃、30分钟加热干燥,得到粘接接合片。在该粘接接合片上配合厚度100μm的光透过性支撑基材(Lonseal公司制商品名、软质聚烯烃膜:POF-120A),通过层压制作由保护膜(表面脱模处理聚对苯二甲酸乙二醇酯)、粘接接合层及光透过性支撑基材构成的粘接接合片。
(实施例2)
在粘接接合成分的配合比例中,除了将光反应性单体量(A-DPH)变更为50重量份以外,进行了与实施例1同样的操作。
(实施例3)
在配合粘接接合成分时,除了不添加硅烷偶合剂以外,进行了与实施例1同样的操作。
(实施例4)
除了将支撑基材从POF-120A替换为Gunze制的DDD(商品名)以外,进行了与实施例1同样的操作。
(实施例5)
除了将粘接接合成分的HTR-860-P3变更为HTR-860-P5(Nagase Chemtex株式会社制商品名,含缩水甘油基丙烯酸橡胶,分子量80万,Tg-10℃)以外,进行了与实施例1同样的操作。
(实施例6)
在配合粘接接合成分时,除了不添加YDF-8170,而添加EXA-4850-150(大日本油墨化学株式会社制商品名,柔软强韧性液状环氧树脂,环氧树脂当量450)5.5重量份以外,进行了与实施例1同样的操作。
(实施例7)
在粘接接合成分的光反应性单体中,除了将IRGACURE 369变更为IRGACURE 907(汽巴特殊化学品公司制商品名,2-甲基-1(4-(硫代甲基)苯基-2-吗啉代基丙烷-1-酮:I-907)1.5重量份以外,进行了与实施例1同样的操作。
(实施例8)
除了将粘接接合成分的A-DPH替换为A-9300(新中村化学工业株式会社制商品名,乙氧基化三聚异氰酸三丙烯酸酯)30重量份以外,进行了与实施例1同样的操作。
(实施例9)
除了将支撑基材从POF-120A替换为FHF-100(Thermo株式会社制,低密度聚对苯二甲酸乙二醇酯/醋酸乙烯酯/低密度聚对苯二甲酸乙二醇酯三层膜)以外,进行了与实施例1同样的操作。
(比较例1)
除了将粘接接合成分的光反应单体A-DPH替换成BPE-200(新中村化学工业株式会社制商品名,2.2-双〔4-(甲基丙烯酰氧基·二乙氧基)苯基〕丙烷)以外,进行了与实施例1同样的操作。
(比较例2)
除了将粘接接合成分的光反应单体A-DPH替换成FA-321M(日立化成株式会社制商品名,环氧乙烷改性双酚A二甲基丙烯酸酯)30重量份以外,进行了与实施例1同样的操作。
(比较例3)
除了不添加粘接接合成分的光反应性单体以外,进行了与实施例1同样的操作。
(比较例4)
在粘接接合成分的配合中,除了不添加光引发剂以外,进行了与实施例1同样的操作。将以上实施例及比较例的评价所涉及的组成等示于表1、2。
实施例及比较例的评价是采用以下的评价方法。将结果示于表3、4。
(1)常温粘贴性
将粘接接合片粘贴于放置在晶片架上的厚度280μm的硅晶片上,评价常温粘贴性。“A”表示粘贴性良好。
(2)切割后的芯片飞散
将粘接接合片粘贴于厚度280μm的硅晶片上,将附粘接接合片的硅晶片载置于切割装置上。接着,将半导体晶片固定于切割装置上,以10mm/sec的速度,切割成3.2mm×3.2mm的矩形后,计数因粘合力弱而从粘接接合片上剥离的半导体芯片的个数,进行评价。
(3)拾取性
将半导体晶片固定于切割装置上,以10mm/sec的速度,切割成3.2mm×3.2mm的矩形后,使用Fusion公司制曝光机(商品名:AEL-1B/M),将照射体放置于照度50mW/cm2的地方,从粘接接合片的基材膜侧照射8秒,评价是否可以将附粘接接合层的半导体芯片从光透过性支撑基材上拾取。
A:基本上可以拾取全部的芯片。
B:可以拾取的切割后的芯片占50~90%。
C:切割后的芯片中可以拾取的芯片占50%以下。
(4)初期剪切粘接性
将半导体晶片固定于切割装置上,以10mm/sec的速度,切割成3.2mm×3.2mm的矩形后,照射紫外线,将附粘接接合层的半导体芯片从光透过性支撑基材上拾取后,以180℃、2MPa、30sec的条件管心焊接到有机基板(PSR-4000、SR-AUS5、0.2mm厚度)上,施加175℃、5小时的后固化处理,得到评价样品。将该评价样品在265℃的热板上保持30sec后,测定芯片与有机基板间的剪切粘接强度。
(5)耐回流开裂性
使用粘接接合片,将半导体晶片在配线基板上将粘接接合片以100℃、200gf、300sec的条件管心焊接后,使用密封剂(日立化成制:CEL-9700-HF10)铸模成特定形状,然后以175℃、5小时加热固化来封装。把固化后的封装在85℃/60%RH的条件下保管7天后,使封装通过设定好温度的IR回流炉,使封装表面的最高温度为260℃并且可保持该温度20秒,采用目测和超声波显微镜观察封装中的开裂情况。此时记录对10个封装的发生开裂的数目。
A:未发生开裂的情况。
B:发生了开裂的情况。
表1
实施例1 | 实施例2 | 实施例3 | 实施例4 | 实施例5 | 实施例6 | 实施例7 | |||
粘接接合层 | (A)高分子量成分 | HTR-860-P3 | 100 | 100 | 100 | 100 | - | 100 | 100 |
HTR-860-P5 | - | - | - | - | 100 | - | - | ||
(B)环氧树脂 | YDCN-703 | 5.4 | 5.4 | 5.4 | 5.4 | 5.4 | 5.4 | 5.4 | |
EXA-4850 | - | - | - | - | - | 5.5 | - | ||
YDF-8170 | 16.2 | 16.2 | 16.2 | 16.2 | 16.2 | - | 16.2 | ||
(C)固化剂 | LF2882 | 15.3 | 15.3 | 15.3 | 15.3 | 15.3 | 30.6 | 15.3 | |
(D)光反应性单体(括号内为Tg) | A-DPH(250℃以上) | 30 | 50 | 30 | 30 | 30 | 30 | 30 | |
A-9300(250℃以上) | - | - | - | - | - | - | - | ||
BPE-200(75℃) | - | - | - | - | - | - | - | ||
FA-321M(150℃以下) | - | - | - | - | - | - | - | ||
(E)光引发剂 | I-369 | 1.5 | 1.5 | 1.5 | 1.5 | 1.5 | 1.5 | - | |
I-907 | - | - | - | - | - | - | 1.5 | ||
硅烷偶合剂 | NUCA-189 | 0.1 | 0.1 | - | - | 0.1 | 0.1 | 0.1 | |
NUCA-1160 | 0.3 | 0.3 | - | - | 0.3 | 0.3 | 0.3 | ||
UV照射后90°剥离强度(N/m) | 2 | 1 | 2 | 6 | 3 | 7 | 5 | ||
UV照射前25℃的胶粘强度 | 46 | 80 | 38 | 46 | 33 | 99 | 78 | ||
支撑基材 | 表面能(mN/m) | 33 | 33 | 33 | 36 | 33 | 33 | 33 | |
25℃的弹性模量(MPa) | 120 | 120 | 120 | 88 | 120 | 120 | 120 | ||
25℃的屈服伸长(%) | 24 | 24 | 24 | 8 | 24 | 24 | 24 | ||
名称 | POF-120A | POF-120A | POF-120A | DDD | POF-120A | POF-120A | POF-120A |
表2
实施例8 | 实施例9 | 比较例1 | 比较例2 | 比较例3 | 比较例4 | |||
粘接接合层 | (A)高分子量成分 | HTR-860-P3 | 100 | 100 | 100 | 100 | 00 | 100 |
HTR-860-P5 | - | - | - | - | - | - | ||
(B)环氧树脂 | YDCN-703 | 5.4 | 5.4 | 5.4 | 5.4 | 5.4 | 5.4 | |
EXA-4850 | - | - | - | - | - | - | ||
YDF-8170 | 16.2 | 16.2 | 16.2 | 16.2 | 16.2 | 16.2 | ||
(C)固化剂 | LF2882 | 15.3 | 15.3 | 15.3 | 15.3 | 15.3 | 15.3 | |
(D)光反应性单体(括号内为Tg) | A-DPH(250℃以上) | - | 30 | - | - | - | 30 | |
A-9300(250℃以上) | 30 | - | - | - | - | - | ||
BPE-200(75℃) | - | - | 30 | - | - | - | ||
FA-321M(150℃以下) | - | - | - | 30 | - | - | ||
(E)光引发剂 | I-369 | 1.5 | 1.5 | 1.5 | 1.5 | 1.5 | - | |
I-907 | - | - | - | - | - | - | ||
硅烷偶合剂 | NUCA-189 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | |
NUCA-1160 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | ||
UV照射后90°剥离强度(N/m) | 4 | 2 | 10 | 未剥离 | 未剥离 | 未剥离 | ||
UV照射前25℃的胶粘强度 | 103 | 46 | 352 | 244 | 21 | 87 | ||
支撑基材 | 表面能(mN/m) | 33 | 33 | 33 | 33 | 33 | 33 | |
25℃的弹性模量(MPa) | 120 | 138 | 120 | 120 | 120 | 120 | ||
25℃的屈服伸长(%) | 24 | 20 | 24 | 24 | 24 | 24 | ||
名称 | POF-120A | FHF-100 | POF-120A | POF-120A | POF-120 | POF-120A |
表3
实施例1 | 实施例2 | 实施例3 | 实施例4 | 实施例5 | 实施例6 | 实施例7 | ||
评价 | 常温粘贴性 | A | A | A | A | A | A | A |
切割后的芯片飞散 | 无 | 无 | 无 | 无 | 无 | 无 | 无 | |
拾取性 | A | A | A | A | A | A | A | |
剪切粘接强度 | 3.26 | 1.11 | 2.21 | 3.04 | 2.99 | 2.88 | 3.10 | |
耐回流开裂性 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | |
T1(℃) | 40 | 40 | 40 | 60 | 40 | 40 | 40 | |
α1(ppm/℃) | 264 | 264 | 264 | 266 | 264 | 264 | 264 | |
T2(℃) | 25 | 25 | 25 | 25 | 25 | 25 | 25 | |
α2(ppm/℃) | 264 | 264 | 264 | 266 | 264 | 264 | 264 | |
T1×α1-T2×α2(ppm) | 3960 | 3960 | 3960 | 9310 | 3960 | 3960 | 3960 |
表4
实施例8 | 实施例9 | 比较例1 | 比较例2 | 比较例3 | 比较例4 | ||
评价 | 常温粘贴性 | A | A | A | A | A | A |
切割后的芯片飞散 | 无 | 无 | 无 | 无 | 无 | 无 | |
拾取性 | A | A | B | C | C | C | |
剪切粘接强度 | 5.60 | 3.26 | 1.08 | 2.85 | 3.52 | 1.32 | |
耐回流开裂性 | 0/10 | 0/10 | 10/10 | 8/10 | 0/10 | 10/10 | |
T1(℃) | 40 | 60 | 40 | 40 | 40 | 40 | |
α1(ppm/℃) | 264 | 1460 | 264 | 264 | 264 | 264 | |
T2(℃) | 25 | 25 | 25 | 25 | 25 | 25 | |
α2(ppm/℃) | 264 | 568 | 264 | 264 | 264 | 264 | |
T1×α1-T2×α2(ppm) | 3960 | 73400 | 3960 | 3960 | 3960 | 3960 |
从以上结果可以知道,虽然实施例1~9能够满足常温粘贴性、切割后的芯片飞散、拾取性、耐回流开裂性,但比较例1及比较例2由于光反应性单体通过照射紫外线得到的固化物的Tg较低,所以耐回流性的特性较差。比较例3由于不存在光反应性单体,所以照射紫外线后的拾取性较差,比较例4则由于不存在光引发剂,所以照射紫外线后的拾取性较差,进而可以知道由于存在未反应的光反应性单体,所以耐回流性较差。
工业应用性
本发明的光固型粘接接合片,由于具有上述构成,其常温粘贴性、切割性及耐回流开裂性优异,所以可适宜地作为用来固定电子材料的粘接接合树脂。
Claims (11)
1.一种粘接接合片,其是具有光透过性支撑基材与粘接接合层的,用于切割工序及半导体元件粘接工序双方的粘接接合片,所述粘接接合层包括:
(A)含有官能团的重均分子量为10万以上的高分子量成分;
(B)环氧树脂;
(C)酚系环氧树脂固化剂;
(D)通过照射紫外线得到的固化物的Tg为250℃以上的光反应性单体;以及
(E)通过照射波长200~450nm的紫外线而产生碱及自由基的光引发剂。
2.如权利要求1所述的粘接接合片,其中,所述(A)含有官能团的重均分子量为10万以上的高分子量成分,是含有占高分子量成分总量的0.5~6质量%的含环氧基重复单元的(甲基)丙烯酸类共聚物。
3.如权利要求1或2所述的粘接接合片,其中,含有100重量份的所述(A)含有官能团的重均分子量为10万以上的高分子量成分、及5~250重量份的所述(B)环氧树脂;所含有的所述(C)酚系环氧树脂固化剂的量为,相对于所述(B)环氧树脂中的每1个环氧基,所述(C)酚系环氧树脂固化剂中的酚性羟基的当量比在0.5~1.5的范围;含有5~100重量份的所述(D)通过照射紫外线得到的固化物的Tg为250℃以上的光反应性单体、以及0.1~20重量份的所述(E)通过照射波长200~450nm的紫外线而产生碱及自由基的光引发剂。
4.如权利要求1~3中的任一项所述的粘接接合片,其中,所述支撑基材的表面自由能为50mN/m以下。
5.如权利要求1~4中的任一项所述的粘接接合片,其中,所述支撑基材在25℃的弹性模量为1000MPa以下。
6.如权利要求1~5中的任一项所述的粘接接合片,其中,所述支撑基材在常温的屈服伸长为20%以上。
7.如权利要求1~6中的任一项所述的粘接接合片,其中,对于所述支撑基材的所述粘接接合层照射紫外线后的90°剥离粘接强度为10N/m以下。
8.如权利要求1~7中的任一项所述的粘接接合片,其中,所述粘接接合层在25℃的胶粘强度为15gf以上。
9.如权利要求1~8中的任一项所述的粘接接合片,其中,所述支撑基材满足下述公式(a)所示的条件。
(制作粘接接合片时的复制温度(T1)×复制温度下的线膨胀系数(α1))-(常温(T2)×常温下的线膨胀系数(α2))≤7000ppm(a)
10.一种半导体装置,具备使用权利要求1~9中的任一项所述的粘接接合片,粘接半导体元件与半导体搭载用支撑构件而成的构件。
11.一种半导体装置的制造方法,包括以下工序:
(1)将权利要求1~9中的任一项所述的具有粘接接合层和支撑基材的粘接接合片,经由所述粘接接合层粘贴于半导体晶片上的工序;
(2)切割所述半导体晶片,形成附粘接接合层芯片的工序;
(3)对所述附粘接接合层芯片上的所述粘接接合层照射紫外线,固化其粘接接合层,形成附粘接接合层半导体元件,将所述支撑基材从该附粘接接合层半导体元件上剥离的工序;以及
(4)经由所述粘接接合层,粘接所述剥离支撑基材之后的所述附粘接接合层半导体元件与半导体元件搭载用支撑构件的工序。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004147973 | 2004-05-18 | ||
JP147973/2004 | 2004-05-18 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2009100018165A Division CN101451054A (zh) | 2004-05-18 | 2005-05-17 | 粘接接合片与使用该粘接接合片的半导体装置以及其制造方法 |
CNA2009100018150A Division CN101451053A (zh) | 2004-05-18 | 2005-05-17 | 粘接接合片与使用该粘接接合片的半导体装置以及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1954411A true CN1954411A (zh) | 2007-04-25 |
CN100463115C CN100463115C (zh) | 2009-02-18 |
Family
ID=35394422
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200580015896XA Expired - Fee Related CN100463115C (zh) | 2004-05-18 | 2005-05-17 | 粘接接合片与使用该粘接接合片的半导体装置以及其制造方法 |
CNA2009100018150A Pending CN101451053A (zh) | 2004-05-18 | 2005-05-17 | 粘接接合片与使用该粘接接合片的半导体装置以及其制造方法 |
CNA2009100018165A Pending CN101451054A (zh) | 2004-05-18 | 2005-05-17 | 粘接接合片与使用该粘接接合片的半导体装置以及其制造方法 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2009100018150A Pending CN101451053A (zh) | 2004-05-18 | 2005-05-17 | 粘接接合片与使用该粘接接合片的半导体装置以及其制造方法 |
CNA2009100018165A Pending CN101451054A (zh) | 2004-05-18 | 2005-05-17 | 粘接接合片与使用该粘接接合片的半导体装置以及其制造方法 |
Country Status (7)
Country | Link |
---|---|
US (4) | US7578891B2 (zh) |
JP (1) | JPWO2005112091A1 (zh) |
KR (5) | KR20080042941A (zh) |
CN (3) | CN100463115C (zh) |
MY (1) | MY142524A (zh) |
TW (1) | TWI387631B (zh) |
WO (1) | WO2005112091A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102533148A (zh) * | 2010-12-15 | 2012-07-04 | 第一毛织株式会社 | 切割芯片粘合膜、切割芯片粘合膜用组合物和半导体装置 |
CN102597143A (zh) * | 2009-10-19 | 2012-07-18 | 德莎欧洲公司 | 产生粘合的方法 |
CN102786885A (zh) * | 2011-05-17 | 2012-11-21 | 日东电工株式会社 | 半导体装置制造用的胶粘片 |
CN102898966A (zh) * | 2011-07-25 | 2013-01-30 | 日东电工株式会社 | 胶粘片及其用途 |
CN104710787A (zh) * | 2011-02-15 | 2015-06-17 | 日产化学工业株式会社 | 光固化型膜形成用组合物及固化膜的制造方法 |
CN105934491A (zh) * | 2014-01-29 | 2016-09-07 | 日立化成株式会社 | 粘接剂组合物、使用了粘接剂组合物的半导体装置的制造方法、以及固体摄像元件 |
US9920227B2 (en) | 2014-01-29 | 2018-03-20 | Hitachi Chemical Company, Ltd. | Resin composition, method for manufacturing semiconductor device using resin composition, and solid-state imaging element |
US10358580B2 (en) | 2014-01-29 | 2019-07-23 | Hitachi Chemical Company, Ltd. | Adhesive composition, resin cured product obtained from adhesive composition, method for manufacturing semiconductor device using adhesive composition, and solid-state imaging element |
Families Citing this family (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2001232298A1 (en) * | 2000-02-15 | 2001-08-27 | Hitachi Chemical Co. Ltd. | Adhesive composition, process for producing the same, adhesive film made with the same, substrate for semiconductor mounting, and semiconductor device |
CN100463115C (zh) * | 2004-05-18 | 2009-02-18 | 日立化成工业株式会社 | 粘接接合片与使用该粘接接合片的半导体装置以及其制造方法 |
JP4788425B2 (ja) * | 2006-03-23 | 2011-10-05 | 住友ベークライト株式会社 | 半導体用接着剤、これを用いた半導体装置および半導体装置の製造方法 |
JP2007258508A (ja) * | 2006-03-24 | 2007-10-04 | Sumitomo Bakelite Co Ltd | 半導体用接着剤、これを用いた半導体装置および半導体装置の製造方法 |
KR101081263B1 (ko) * | 2006-05-09 | 2011-11-08 | 히다치 가세고교 가부시끼가이샤 | 접착 시트, 이를 이용한 회로 부재의 접속 구조 및 반도체 장치 |
KR101370245B1 (ko) * | 2006-05-23 | 2014-03-05 | 린텍 가부시키가이샤 | 점접착제 조성물, 점접착 시트 및 반도체장치의 제조방법 |
US7732329B2 (en) * | 2006-08-30 | 2010-06-08 | Ipgrip, Llc | Method and apparatus for workpiece surface modification for selective material deposition |
JP2008088411A (ja) * | 2006-09-05 | 2008-04-17 | Hitachi Chem Co Ltd | 接着シート |
JP2014003300A (ja) * | 2006-09-05 | 2014-01-09 | Hitachi Chemical Co Ltd | 接着シート |
JP2008101183A (ja) * | 2006-09-20 | 2008-05-01 | Hitachi Chem Co Ltd | 粘接着シート、これを用いて製造される半導体装置及び半導体装置の製造方法 |
KR20080047990A (ko) | 2006-11-27 | 2008-05-30 | 린텍 가부시키가이샤 | 점접착제 조성물, 점접착 시트 및 반도체 장치의 제조방법 |
GB0801494D0 (en) | 2007-02-23 | 2008-03-05 | Univ Ind & Acad Collaboration | Nonvolatile memory electronic device using nanowire used as charge channel and nanoparticles used as charge trap and method for manufacturing the same |
KR100885193B1 (ko) * | 2007-02-23 | 2009-02-24 | 고려대학교 산학협력단 | 나노선나노입자 이종결합의 비휘발성 메모리 전자소자 제조방법 |
JP2008262159A (ja) * | 2007-03-16 | 2008-10-30 | Hitachi Chem Co Ltd | 光導波路用粘接着剤樹脂組成物およびこれを用いた光導波路用粘接着シート、ならびにこれらを用いた光学装置 |
AU2008227642A1 (en) * | 2007-03-16 | 2008-09-25 | Hitachi Chemical Company, Ltd. | Adhesive composition for optical waveguide, adhesive film for optical waveguide and adhesive sheet for optical waveguide each using the same, and optical device using any of them |
KR20100022960A (ko) * | 2007-04-27 | 2010-03-03 | 스미토모 베이클리트 컴퍼니 리미티드 | 반도체 웨이퍼의 접합 방법 및 반도체 장치의 제조 방법 |
KR20120007556A (ko) * | 2007-10-09 | 2012-01-20 | 히다치 가세고교 가부시끼가이샤 | 접착 필름이 부착된 반도체칩의 제조 방법, 이 제조 방법에 사용되는 반도체용 접착 필름, 및 반도체 장치의 제조 방법 |
JP2009124096A (ja) * | 2007-10-23 | 2009-06-04 | Hitachi Chem Co Ltd | 粘接着シート |
JP2009186979A (ja) * | 2008-01-07 | 2009-08-20 | Hitachi Chem Co Ltd | 光導波路複合基板の製造方法 |
JP2009209345A (ja) * | 2008-02-06 | 2009-09-17 | Hitachi Chem Co Ltd | 粘接着シート |
JP5426831B2 (ja) * | 2008-02-27 | 2014-02-26 | リンテック株式会社 | 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法 |
KR101141493B1 (ko) * | 2008-03-14 | 2012-05-03 | 스미토모 베이클라이트 가부시키가이샤 | 반도체소자 접착필름 형성용 수지 바니시, 반도체소자 접착필름, 및 반도체장치 |
US20110018127A1 (en) * | 2008-03-31 | 2011-01-27 | Byoungchul Lee | Multilayer UV-Curable Adhesive Film |
JP4806815B2 (ja) * | 2008-03-31 | 2011-11-02 | リンテック株式会社 | 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法 |
WO2010038574A1 (ja) * | 2008-09-30 | 2010-04-08 | ソニーケミカル&インフォメーションデバイス株式会社 | アクリル系絶縁性接着剤 |
KR101006526B1 (ko) * | 2008-10-22 | 2011-01-07 | 주식회사 하이닉스반도체 | 웨이퍼 마운트 테이프, 이를 이용한 웨이퍼 가공 장치 및 방법 |
JP5513734B2 (ja) * | 2008-11-27 | 2014-06-04 | リンテック株式会社 | 接着剤組成物、接着シートおよび半導体装置の製造方法 |
US9991311B2 (en) | 2008-12-02 | 2018-06-05 | Arizona Board Of Regents On Behalf Of Arizona State University | Dual active layer semiconductor device and method of manufacturing the same |
SG171917A1 (en) * | 2008-12-02 | 2011-07-28 | Univ Arizona | Method of preparing a flexible substrate assembly and flexible substrate assembly therefrom |
US9721825B2 (en) | 2008-12-02 | 2017-08-01 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Method of providing a flexible semiconductor device and flexible semiconductor device thereof |
US9601530B2 (en) | 2008-12-02 | 2017-03-21 | Arizona Board Of Regents, A Body Corporated Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Dual active layer semiconductor device and method of manufacturing the same |
CN102460646A (zh) | 2009-05-29 | 2012-05-16 | 代表亚利桑那大学的亚利桑那校董会 | 在高温提供柔性半导体器件的方法及其柔性半导体器件 |
US8287996B2 (en) * | 2009-12-21 | 2012-10-16 | Intel Corporation | Coating for a microelectronic device, treatment comprising same, and method of managing a thermal profile of a microelectronic die |
JP5716339B2 (ja) * | 2010-01-08 | 2015-05-13 | 大日本印刷株式会社 | 粘接着シートおよびそれを用いた接着方法 |
JP2011171712A (ja) * | 2010-01-21 | 2011-09-01 | Hitachi Chem Co Ltd | 半導体ウエハ加工用接着テープ、半導体ウエハ加工用接着テープ付き半導体ウエハの製造方法、半導体装置の製造方法及び半導体装置 |
JP2011178986A (ja) * | 2010-02-02 | 2011-09-15 | Nitto Denko Corp | 半導体装置製造用の接着剤組成物、及び、半導体装置製造用の接着シート |
WO2012021197A2 (en) | 2010-05-21 | 2012-02-16 | Arizona Board Of Regents, For And On Behalf Of Arizona State University | Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof |
WO2012021196A2 (en) | 2010-05-21 | 2012-02-16 | Arizona Board Of Regents, For And On Behalf Of Arizona State University | Method for manufacturing electronic devices and electronic devices thereof |
TWI456012B (zh) | 2010-06-08 | 2014-10-11 | Henkel IP & Holding GmbH | 使用脈衝式uv光源之晶圓背面塗覆方法 |
KR101617600B1 (ko) | 2010-06-08 | 2016-05-02 | 헨켈 아이피 앤드 홀딩 게엠베하 | 그라인딩 전의 다이싱 및 마이크로 제조된 웨이퍼들 상의 접착제의 코팅 |
TWI488931B (zh) * | 2010-06-08 | 2015-06-21 | Henkel IP & Holding GmbH | 含反應性硫化合物之晶圓背面塗料 |
CN103109350A (zh) * | 2010-09-30 | 2013-05-15 | 飞思卡尔半导体公司 | 处理半导体晶片的方法、半导体晶片以及半导体器件 |
USD804435S1 (en) | 2010-10-15 | 2017-12-05 | Hitachi Chemical Company, Ltd. | Flap in an adhesive tape for semiconductor manufacturing |
JP5717420B2 (ja) * | 2010-11-30 | 2015-05-13 | 日立マクセル株式会社 | 切削加工用粘着テープ |
EP2671248A4 (en) | 2011-02-01 | 2015-10-07 | Henkel Corp | ON A PRECUTED WAFER APPLIED FILM ON A DICING TAPE |
KR101960982B1 (ko) | 2011-02-01 | 2019-07-15 | 헨켈 아이피 앤드 홀딩 게엠베하 | 사전 절단되어 웨이퍼상에 도포된 언더필 필름 |
CN103305131B (zh) * | 2012-03-06 | 2015-01-07 | 上海佑威新材料科技有限公司 | 一种高耐候性结构胶粘剂及其制备方法 |
JP5603453B1 (ja) * | 2013-04-26 | 2014-10-08 | 古河電気工業株式会社 | 半導体ウェハ保護用粘着テープ |
JP5666659B2 (ja) * | 2013-07-17 | 2015-02-12 | リンテック株式会社 | ウェハ加工用シート |
JP6266960B2 (ja) * | 2013-11-21 | 2018-01-24 | 東京応化工業株式会社 | 感エネルギー性組成物 |
WO2017034645A2 (en) | 2015-06-09 | 2017-03-02 | ARIZONA BOARD OF REGENTS, a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY | Method of providing an electronic device and electronic device thereof |
US10381224B2 (en) | 2014-01-23 | 2019-08-13 | Arizona Board Of Regents On Behalf Of Arizona State University | Method of providing an electronic device and electronic device thereof |
WO2015156891A2 (en) | 2014-01-23 | 2015-10-15 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University | Method of providing a flexible semiconductor device and flexible semiconductor device thereof |
WO2015133420A1 (ja) * | 2014-03-03 | 2015-09-11 | リンテック株式会社 | 半導体関連部材加工用シートおよび当該シートを用いるチップの製造方法 |
WO2015141629A1 (ja) * | 2014-03-17 | 2015-09-24 | リンテック株式会社 | ダイボンド層形成フィルム、ダイボンド層形成フィルムが付着した加工物、および半導体装置 |
JP6295132B2 (ja) * | 2014-04-24 | 2018-03-14 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP2017518638A (ja) | 2014-05-13 | 2017-07-06 | アリゾナ・ボード・オブ・リージェンツ・フォー・アンド・オン・ビハーフ・オブ・アリゾナ・ステイト・ユニバーシティArizona Board Of Regents For And On Behalf Of Arizona State University | 電子デバイスを提供する方法およびその電子デバイス |
KR102222118B1 (ko) * | 2014-07-14 | 2021-03-03 | 삼성에스디아이 주식회사 | 가요성 이차 전지 |
US9741742B2 (en) | 2014-12-22 | 2017-08-22 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Deformable electronic device and methods of providing and using deformable electronic device |
US10446582B2 (en) | 2014-12-22 | 2019-10-15 | Arizona Board Of Regents On Behalf Of Arizona State University | Method of providing an imaging system and imaging system thereof |
TWI664257B (zh) | 2015-04-29 | 2019-07-01 | 南韓商Lg化學股份有限公司 | 半導體用黏著劑組成物、半導體用黏著膜以及切晶接合膜 |
JP6547408B2 (ja) * | 2015-05-18 | 2019-07-24 | 日立化成株式会社 | 研削された基材の製造方法、並びにこれに用いられるフィルム状粘着剤及び積層体 |
JP6588404B2 (ja) * | 2015-10-08 | 2019-10-09 | 信越化学工業株式会社 | 仮接着方法及び薄型ウエハの製造方法 |
JP1564803S (zh) * | 2016-01-29 | 2017-11-20 | ||
JP1564805S (zh) * | 2016-01-29 | 2017-11-20 | ||
KR102203869B1 (ko) * | 2018-03-28 | 2021-01-18 | 주식회사 엘지화학 | 임시고정용 점착시트 및 이를 사용한 반도체 장치의 제조 방법 |
WO2019199085A1 (ko) * | 2018-04-12 | 2019-10-17 | 주식회사 엘지화학 | 임시고정용 점착시트 및 이를 사용한 반도체 장치의 제조 방법 |
KR102203870B1 (ko) * | 2018-04-12 | 2021-01-18 | 주식회사 엘지화학 | 임시고정용 점착시트 및 이를 사용한 반도체 장치의 제조 방법 |
JP7287797B2 (ja) * | 2019-03-11 | 2023-06-06 | 日東電工株式会社 | 接着フィルム付きダイシングテープ |
JP2020176242A (ja) * | 2019-04-22 | 2020-10-29 | 日東電工株式会社 | 粘着シートおよびその利用 |
USD962882S1 (en) | 2019-11-14 | 2022-09-06 | Showa Denko Materials Co., Ltd. | Temporary protective film for manufacturing semiconductor devices |
JP1685752S (zh) * | 2020-11-02 | 2021-05-24 | ||
USD962883S1 (en) | 2020-11-02 | 2022-09-06 | Showa Denko Materials Co., Ltd. | Temporary protective film for manufacturing semiconductor devices |
Family Cites Families (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0191534B1 (en) | 1985-02-14 | 1990-05-23 | Bando Chemical Industries, Ltd. | A method for dicing a semiconductor wafer |
US5281473A (en) | 1987-07-08 | 1994-01-25 | Furakawa Electric Co., Ltd. | Radiation-curable adhesive tape |
JP2573661B2 (ja) * | 1988-07-09 | 1997-01-22 | キヤノン株式会社 | 感光感熱型接着剤 |
JPH04196342A (ja) | 1990-11-28 | 1992-07-16 | Mitsui Toatsu Chem Inc | 半導体ウエハダイシング用フィルム |
JP3226065B2 (ja) | 1993-06-28 | 2001-11-05 | キヤノン株式会社 | 単一波長半導体レーザ |
JP3506519B2 (ja) | 1995-03-06 | 2004-03-15 | リンテック株式会社 | 粘接着テープおよびその使用方法 |
TW340967B (en) * | 1996-02-19 | 1998-09-21 | Toray Industries | An adhesive sheet for a semiconductor to connect with a substrate, and adhesive sticking tape for tab, an adhesive sticking tape for wire bonding connection, a substrate for connecting with a semiconductor and a semiconductor device |
JP3195236B2 (ja) * | 1996-05-30 | 2001-08-06 | 株式会社日立製作所 | 接着フィルムを有する配線テープ,半導体装置及び製造方法 |
JP3739488B2 (ja) | 1996-06-25 | 2006-01-25 | リンテック株式会社 | 粘接着テープおよびその使用方法 |
JP3755617B2 (ja) | 1996-08-30 | 2006-03-15 | 日立化成工業株式会社 | ダイシング用ウエハ保持フィルム |
US6312800B1 (en) * | 1997-02-10 | 2001-11-06 | Lintec Corporation | Pressure sensitive adhesive sheet for producing a chip |
JPH10242084A (ja) * | 1997-02-24 | 1998-09-11 | Lintec Corp | ウェハ貼着用粘着シートおよび電子部品の製造方法 |
WO1998044544A1 (en) * | 1997-04-03 | 1998-10-08 | W.L. Gore & Associates, Inc. | Low dielectric constant material with improved dielectric strength |
US6235387B1 (en) * | 1998-03-30 | 2001-05-22 | 3M Innovative Properties Company | Semiconductor wafer processing tapes |
EP1040915B1 (en) * | 1998-10-15 | 2004-12-15 | Teijin Limited | Release film |
KR20000035259A (ko) * | 1998-11-05 | 2000-06-26 | 다케다 마사토시 | 폴리이미드 필름 및 이를 사용한 전기/전자 기기용 기판 |
JP3594853B2 (ja) * | 1999-11-08 | 2004-12-02 | 日東電工株式会社 | 加熱剥離型粘着シート |
US6700185B1 (en) * | 1999-11-10 | 2004-03-02 | Hitachi Chemical Co., Ltd. | Adhesive film for semiconductor, lead frame and semiconductor device using the same, and method for manufacturing semiconductor device |
JP4392732B2 (ja) * | 2000-02-07 | 2010-01-06 | リンテック株式会社 | 半導体チップの製造方法 |
JP4230080B2 (ja) * | 2000-02-18 | 2009-02-25 | リンテック株式会社 | ウエハ貼着用粘着シート |
KR100808424B1 (ko) * | 2000-08-25 | 2008-02-29 | 세키스이가가쿠 고교가부시키가이샤 | 시트상 성형체 |
JP3827520B2 (ja) * | 2000-11-02 | 2006-09-27 | 株式会社ルネサステクノロジ | 半導体装置 |
JP4651805B2 (ja) * | 2000-11-08 | 2011-03-16 | 日東電工株式会社 | 加熱剥離型粘着シート |
KR100815038B1 (ko) * | 2000-12-12 | 2008-03-18 | 코니카 미놀타 홀딩스 가부시키가이샤 | 박막 형성 방법, 박막을 갖는 물품, 광학 필름, 유전체피복 전극 및 플라즈마 방전 처리 장치 |
JP2002212522A (ja) | 2001-01-16 | 2002-07-31 | Hitachi Chem Co Ltd | 接着シート、その使用方法及び半導体装置 |
JP2002367931A (ja) * | 2001-06-07 | 2002-12-20 | Lintec Corp | ダイボンディングシート貼着装置およびダイボンディングシートの貼着方法 |
JP2004043762A (ja) * | 2001-08-27 | 2004-02-12 | Hitachi Chem Co Ltd | 接着シート並びに半導体装置及びその製造方法 |
JP2004043760A (ja) | 2001-08-27 | 2004-02-12 | Hitachi Chem Co Ltd | 接着シート並びに半導体装置及びその製造方法 |
JP4075801B2 (ja) | 2001-08-27 | 2008-04-16 | 日立化成工業株式会社 | 接着シートならびに半導体装置およびその製造法 |
US20030064579A1 (en) * | 2001-09-27 | 2003-04-03 | Masafumi Miyakawa | Surface protecting adhesive film for semiconductor wafer and protecting method for semiconductor wafer using said adhesive film |
DE10297455T5 (de) * | 2001-11-15 | 2004-09-23 | Sekisui Chemical Co., Ltd. | Kleber, Verfahren zum Ablösen eines Klebers von seinem Haftgrund, und druckreaktives Klebeband |
TW578222B (en) * | 2002-01-11 | 2004-03-01 | Mitsui Chemicals Inc | Semiconductor wafer surface protective adhesive tape and backside process method of semiconductor wafer using the same |
CN100334690C (zh) * | 2002-03-27 | 2007-08-29 | 三井化学株式会社 | 半导体晶片表面保护用粘结膜及用该粘结膜的半导体晶片的保护方法 |
JP2004063615A (ja) * | 2002-07-26 | 2004-02-26 | Nitto Denko Corp | 半導体装置の製造方法、半導体装置製造用接着シートおよび半導体装置 |
JPWO2004075293A1 (ja) * | 2003-02-19 | 2006-06-01 | 日立化成工業株式会社 | 半導体用接着フィルム、これを用いた接着フィルム付金属板、接着フィルム付配線回路及び半導体装置並びに半導体装置の製造方法 |
US20060128065A1 (en) * | 2003-06-06 | 2006-06-15 | Teiichi Inada | Adhesive sheet, dicing tape intergrated type adhesive sheet, and semiconductor device producing method |
JP4566527B2 (ja) * | 2003-08-08 | 2010-10-20 | 日東電工株式会社 | 再剥離型粘着シート |
JP4536367B2 (ja) * | 2003-12-24 | 2010-09-01 | 東レ・ダウコーニング株式会社 | ダイシングダイボンディング用シート及びその製造方法 |
JP2005236082A (ja) * | 2004-02-20 | 2005-09-02 | Nitto Denko Corp | レーザーダイシング用粘着シート及びその製造方法 |
MY138566A (en) * | 2004-03-15 | 2009-06-30 | Hitachi Chemical Co Ltd | Dicing/die bonding sheet |
EP1734094A4 (en) * | 2004-03-19 | 2009-09-02 | Mitsui Chemicals Inc | ADHESIVE MATERIAL, PRESSURE SENSITIVE ADHESIVE FILM AND METHOD FOR USING SAME |
JP2005327789A (ja) * | 2004-05-12 | 2005-11-24 | Sharp Corp | ダイシング・ダイボンド兼用粘接着シートおよびこれを用いた半導体装置の製造方法 |
CN100463115C (zh) * | 2004-05-18 | 2009-02-18 | 日立化成工业株式会社 | 粘接接合片与使用该粘接接合片的半导体装置以及其制造方法 |
JP4776189B2 (ja) * | 2004-08-03 | 2011-09-21 | 古河電気工業株式会社 | ウエハ加工用テープ |
US8080319B2 (en) * | 2005-10-21 | 2011-12-20 | Kippon Kayaku Kabushiki Kaisha | Thermosetting resin composition and use thereof |
CN101490813B (zh) * | 2006-07-19 | 2011-07-13 | 积水化学工业株式会社 | 切片及芯片键合带以及半导体芯片制造方法 |
JP2009064975A (ja) * | 2007-09-06 | 2009-03-26 | Nitto Denko Corp | ダイシング用粘着シート及びダイシング方法 |
JP5055097B2 (ja) * | 2007-11-08 | 2012-10-24 | 日東電工株式会社 | 検査用粘着シート |
JP5087372B2 (ja) * | 2007-11-19 | 2012-12-05 | 日東電工株式会社 | 樹脂積層体、粘着シート、該粘着シートを用いた被着体の加工方法、及びその剥離装置 |
JP5089560B2 (ja) * | 2008-11-28 | 2012-12-05 | リンテック株式会社 | 半導体チップ積層体および半導体チップ積層用接着剤組成物 |
JP5456440B2 (ja) * | 2009-01-30 | 2014-03-26 | 日東電工株式会社 | ダイシングテープ一体型ウエハ裏面保護フィルム |
KR20110120124A (ko) * | 2010-04-28 | 2011-11-03 | 주식회사 엘지화학 | 알칼리 가용성 고분자 화합물과 이를 이용한 감광성 수지 조성물 |
-
2005
- 2005-05-17 CN CNB200580015896XA patent/CN100463115C/zh not_active Expired - Fee Related
- 2005-05-17 WO PCT/JP2005/008971 patent/WO2005112091A1/ja active Application Filing
- 2005-05-17 KR KR1020087009806A patent/KR20080042941A/ko active Application Filing
- 2005-05-17 TW TW094115861A patent/TWI387631B/zh not_active IP Right Cessation
- 2005-05-17 JP JP2006513607A patent/JPWO2005112091A1/ja active Pending
- 2005-05-17 KR KR1020087009805A patent/KR20080042940A/ko active Search and Examination
- 2005-05-17 KR KR1020107008843A patent/KR100991940B1/ko not_active IP Right Cessation
- 2005-05-17 KR KR1020097012505A patent/KR20090077860A/ko active Search and Examination
- 2005-05-17 CN CNA2009100018150A patent/CN101451053A/zh active Pending
- 2005-05-17 CN CNA2009100018165A patent/CN101451054A/zh active Pending
- 2005-05-17 US US11/596,923 patent/US7578891B2/en not_active Expired - Fee Related
- 2005-05-17 KR KR1020067024821A patent/KR100865412B1/ko not_active IP Right Cessation
- 2005-05-18 MY MYPI20052250A patent/MY142524A/en unknown
-
2009
- 2009-08-03 US US12/534,253 patent/US8012580B2/en not_active Expired - Fee Related
- 2009-08-03 US US12/534,241 patent/US8003207B2/en not_active Expired - Fee Related
-
2011
- 2011-07-29 US US13/194,633 patent/US20110281399A1/en not_active Abandoned
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102597143A (zh) * | 2009-10-19 | 2012-07-18 | 德莎欧洲公司 | 产生粘合的方法 |
CN102533148A (zh) * | 2010-12-15 | 2012-07-04 | 第一毛织株式会社 | 切割芯片粘合膜、切割芯片粘合膜用组合物和半导体装置 |
CN104710787B (zh) * | 2011-02-15 | 2018-02-16 | 日产化学工业株式会社 | 光固化型膜形成用组合物及固化膜的制造方法 |
CN104710787A (zh) * | 2011-02-15 | 2015-06-17 | 日产化学工业株式会社 | 光固化型膜形成用组合物及固化膜的制造方法 |
CN102786885A (zh) * | 2011-05-17 | 2012-11-21 | 日东电工株式会社 | 半导体装置制造用的胶粘片 |
CN102786885B (zh) * | 2011-05-17 | 2016-06-29 | 日东电工株式会社 | 半导体装置制造用的胶粘片 |
CN102898966A (zh) * | 2011-07-25 | 2013-01-30 | 日东电工株式会社 | 胶粘片及其用途 |
CN105934491A (zh) * | 2014-01-29 | 2016-09-07 | 日立化成株式会社 | 粘接剂组合物、使用了粘接剂组合物的半导体装置的制造方法、以及固体摄像元件 |
US9868884B2 (en) | 2014-01-29 | 2018-01-16 | Hitachi Chemical Company, Ltd. | Adhesive composition, method for manufacturing semiconductor device using adhesive composition, and solid-state imaging element |
US9920227B2 (en) | 2014-01-29 | 2018-03-20 | Hitachi Chemical Company, Ltd. | Resin composition, method for manufacturing semiconductor device using resin composition, and solid-state imaging element |
CN105934491B (zh) * | 2014-01-29 | 2018-04-24 | 日立化成株式会社 | 粘接剂组合物、使用了粘接剂组合物的半导体装置的制造方法、以及固体摄像元件 |
US10358580B2 (en) | 2014-01-29 | 2019-07-23 | Hitachi Chemical Company, Ltd. | Adhesive composition, resin cured product obtained from adhesive composition, method for manufacturing semiconductor device using adhesive composition, and solid-state imaging element |
US10808150B2 (en) | 2014-01-29 | 2020-10-20 | Hitachi Chemical Company, Ltd. | Resin composition, method for manufacturing semiconductor device using resin composition, and solid-state imaging element |
Also Published As
Publication number | Publication date |
---|---|
KR20100060002A (ko) | 2010-06-04 |
CN101451054A (zh) | 2009-06-10 |
KR20080042941A (ko) | 2008-05-15 |
US20100003513A1 (en) | 2010-01-07 |
US8003207B2 (en) | 2011-08-23 |
CN101451053A (zh) | 2009-06-10 |
US20100003512A1 (en) | 2010-01-07 |
KR100865412B1 (ko) | 2008-10-24 |
TW200538528A (en) | 2005-12-01 |
US20110281399A1 (en) | 2011-11-17 |
KR100991940B1 (ko) | 2010-11-04 |
KR20090077860A (ko) | 2009-07-15 |
US7578891B2 (en) | 2009-08-25 |
JPWO2005112091A1 (ja) | 2008-03-27 |
KR20070011540A (ko) | 2007-01-24 |
WO2005112091A1 (ja) | 2005-11-24 |
US8012580B2 (en) | 2011-09-06 |
CN100463115C (zh) | 2009-02-18 |
MY142524A (en) | 2010-12-15 |
TWI387631B (zh) | 2013-03-01 |
US20070241436A1 (en) | 2007-10-18 |
KR20080042940A (ko) | 2008-05-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100463115C (zh) | 粘接接合片与使用该粘接接合片的半导体装置以及其制造方法 | |
CN102190978B (zh) | 粘接片及其制造方法、以及半导体装置的制造方法及半导体装置 | |
JP5109239B2 (ja) | 粘接着シート、粘接着シートの製造方法及び半導体装置の製造方法 | |
CN102265388A (zh) | 热固型芯片接合薄膜 | |
JP2008101183A (ja) | 粘接着シート、これを用いて製造される半導体装置及び半導体装置の製造方法 | |
JP5499516B2 (ja) | 接着剤組成物、回路部材接続用接着剤シート及び半導体装置の製造方法 | |
WO2010131575A1 (ja) | 接着剤組成物、回路部材接続用接着剤シート及び半導体装置の製造方法 | |
TW201213477A (en) | Adhesive composition and film for manufacturing semiconductor | |
JP2007308694A (ja) | 半導体用接着部材、半導体装置及び半導体装置の製造方法 | |
JP5754072B2 (ja) | 粘接着剤組成物、回路部材接続用粘接着剤シート及び半導体装置の製造方法 | |
JP2004238464A (ja) | 接着シートならびに半導体装置およびその製造方法 | |
TW201100511A (en) | Adhesive agent composition, adhesive sheet, die cutting-die attach film and semiconductor device | |
JP2009124135A (ja) | 半導体用接着部材及び半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090218 Termination date: 20140517 |