DE10006257B8 - Dünnfilmtransistoren mit organisch-anorganischen Hybridmaterialien als halbleitende Kanäle - Google Patents

Dünnfilmtransistoren mit organisch-anorganischen Hybridmaterialien als halbleitende Kanäle Download PDF

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Publication number
DE10006257B8
DE10006257B8 DE10006257A DE10006257A DE10006257B8 DE 10006257 B8 DE10006257 B8 DE 10006257B8 DE 10006257 A DE10006257 A DE 10006257A DE 10006257 A DE10006257 A DE 10006257A DE 10006257 B8 DE10006257 B8 DE 10006257B8
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DE
Germany
Prior art keywords
thin
organic
film transistors
inorganic hybrid
hybrid materials
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Expired - Fee Related
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DE10006257A
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English (en)
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DE10006257A1 (de
DE10006257B4 (de
Inventor
Konstantinos Chondroudis
Christos D. Dimitrakopoulos
Cherie R. Kagan
Ioannis Kymissis
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GlobalFoundries Inc
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International Business Machines Corp
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Publication of DE10006257B4 publication Critical patent/DE10006257B4/de
Application granted granted Critical
Publication of DE10006257B8 publication Critical patent/DE10006257B8/de
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
DE10006257A 1999-03-03 2000-02-11 Dünnfilmtransistoren mit organisch-anorganischen Hybridmaterialien als halbleitende Kanäle Expired - Fee Related DE10006257B8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/261,515 US6180956B1 (en) 1999-03-03 1999-03-03 Thin film transistors with organic-inorganic hybrid materials as semiconducting channels
US09/261,515 1999-03-03

Publications (3)

Publication Number Publication Date
DE10006257A1 DE10006257A1 (de) 2000-09-14
DE10006257B4 DE10006257B4 (de) 2006-06-29
DE10006257B8 true DE10006257B8 (de) 2006-12-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE10006257A Expired - Fee Related DE10006257B8 (de) 1999-03-03 2000-02-11 Dünnfilmtransistoren mit organisch-anorganischen Hybridmaterialien als halbleitende Kanäle

Country Status (7)

Country Link
US (1) US6180956B1 (de)
JP (1) JP3872246B2 (de)
KR (1) KR100351651B1 (de)
CN (1) CN1145218C (de)
DE (1) DE10006257B8 (de)
SG (1) SG82680A1 (de)
TW (1) TW461116B (de)

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US7846838B2 (en) 2005-07-29 2010-12-07 Polyic Gmbh & Co. Kg Method for producing an electronic component
US7940340B2 (en) 2005-07-04 2011-05-10 Polyic Gmbh & Co. Kg Multilayer body with electrically controllable optically active systems of layers
US8315061B2 (en) 2005-09-16 2012-11-20 Polyic Gmbh & Co. Kg Electronic circuit with elongated strip layer and method for the manufacture of the same

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US7875975B2 (en) 2000-08-18 2011-01-25 Polyic Gmbh & Co. Kg Organic integrated circuit completely encapsulated by multi-layered barrier and included in RFID tag
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US6838198B2 (en) * 2000-12-07 2005-01-04 Industrial Research Limited Organic/inorganic-oxide multilayer materials
DE10061297C2 (de) 2000-12-08 2003-05-28 Siemens Ag Verfahren zur Sturkturierung eines OFETs
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JP4547864B2 (ja) * 2003-05-20 2010-09-22 ソニー株式会社 電界効果型トランジスタ及びその製造方法
JP4470398B2 (ja) * 2003-06-23 2010-06-02 Ｔｄｋ株式会社 電界効果トランジスタ
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CN100490205C (zh) * 2003-07-10 2009-05-20 国际商业机器公司 淀积金属硫族化物膜的方法和制备场效应晶体管的方法
CN100456499C (zh) * 2003-07-17 2009-01-28 松下电器产业株式会社 薄膜晶体管及其制造方法
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DE10340644B4 (de) * 2003-09-03 2010-10-07 Polyic Gmbh & Co. Kg Mechanische Steuerelemente für organische Polymerelektronik
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WO2006025353A1 (ja) * 2004-08-31 2006-03-09 Matsushita Electric Industrial Co., Ltd. 電界効果トランジスタおよびその製造方法、ならびにそれを用いた電子機器
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Cited By (4)

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Publication number Priority date Publication date Assignee Title
US7812343B2 (en) 2005-04-15 2010-10-12 Polyic Gmbh & Co. Kg Multilayer composite body having an electronic function
US7940340B2 (en) 2005-07-04 2011-05-10 Polyic Gmbh & Co. Kg Multilayer body with electrically controllable optically active systems of layers
US7846838B2 (en) 2005-07-29 2010-12-07 Polyic Gmbh & Co. Kg Method for producing an electronic component
US8315061B2 (en) 2005-09-16 2012-11-20 Polyic Gmbh & Co. Kg Electronic circuit with elongated strip layer and method for the manufacture of the same

Also Published As

Publication number Publication date
CN1266287A (zh) 2000-09-13
US6180956B1 (en) 2001-01-30
SG82680A1 (en) 2001-08-21
KR20000062567A (ko) 2000-10-25
CN1145218C (zh) 2004-04-07
TW461116B (en) 2001-10-21
DE10006257A1 (de) 2000-09-14
DE10006257B4 (de) 2006-06-29
KR100351651B1 (ko) 2002-09-11
JP3872246B2 (ja) 2007-01-24
JP2000260999A (ja) 2000-09-22

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