DE10080898T1 - Mehrschicht-Antireflexionsfilm, optisches Element und Reduktionsprojektionsbelichtungsapparat - Google Patents

Mehrschicht-Antireflexionsfilm, optisches Element und Reduktionsprojektionsbelichtungsapparat

Info

Publication number
DE10080898T1
DE10080898T1 DE10080898T DE10080898T DE10080898T1 DE 10080898 T1 DE10080898 T1 DE 10080898T1 DE 10080898 T DE10080898 T DE 10080898T DE 10080898 T DE10080898 T DE 10080898T DE 10080898 T1 DE10080898 T1 DE 10080898T1
Authority
DE
Germany
Prior art keywords
optical element
exposure apparatus
reflection film
projection exposure
reduction projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE10080898T
Other languages
English (en)
Inventor
Takeshi Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of DE10080898T1 publication Critical patent/DE10080898T1/de
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
DE10080898T 1999-03-29 2000-03-29 Mehrschicht-Antireflexionsfilm, optisches Element und Reduktionsprojektionsbelichtungsapparat Ceased DE10080898T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8727599 1999-03-29
PCT/JP2000/001950 WO2000058761A1 (fr) 1999-03-29 2000-03-29 Film multicouche antireflechissant, composant optique, et systeme reduisant l'exposition a des projections

Publications (1)

Publication Number Publication Date
DE10080898T1 true DE10080898T1 (de) 2001-06-28

Family

ID=13910232

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10080898T Ceased DE10080898T1 (de) 1999-03-29 2000-03-29 Mehrschicht-Antireflexionsfilm, optisches Element und Reduktionsprojektionsbelichtungsapparat

Country Status (3)

Country Link
US (1) US6590702B1 (de)
DE (1) DE10080898T1 (de)
WO (1) WO2000058761A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9933711B2 (en) 2011-10-26 2018-04-03 Carl Zeiss Smt Gmbh Optical element

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US6732546B1 (en) 1999-08-12 2004-05-11 Nikon Corporation Product method of synthetic silica glass and thermal treatment apparatus
DE10064143A1 (de) * 2000-12-15 2002-06-20 Zeiss Carl Reflexionsminderungsbeschichtung für Ultraviolettlicht bei großen Einfallswinkeln
NL1018139C2 (nl) * 2001-05-23 2002-11-26 Stichting Fund Ond Material Meerlagenspiegel voor straling in het XUV-golflengtegebied en werkwijze voor de vervaardiging daarvan.
JPWO2003009015A1 (ja) 2001-07-18 2004-11-11 株式会社ニコン フッ化ランタン膜を備えた光学素子
JP2003149404A (ja) * 2001-11-09 2003-05-21 Canon Inc 光学薄膜およびその製造方法、及び光学薄膜による光学素子、光学系、該光学系を備える撮像装置、記録装置、露光装置
JP4065530B2 (ja) * 2002-05-22 2008-03-26 キヤノン株式会社 反射防止膜、該反射防止膜を有する光学素子及び光学系
AU2003248251A1 (en) * 2002-07-09 2004-01-23 Nikon Corporation Exposure system
JP2005136244A (ja) * 2003-10-31 2005-05-26 Semiconductor Leading Edge Technologies Inc 露光方法
JP4423119B2 (ja) 2004-06-16 2010-03-03 キヤノン株式会社 反射防止膜及びそれを用いた光学素子
WO2006133884A2 (en) * 2005-06-14 2006-12-21 Carl Zeiss Smt Ag Optical element with an antireflection coating, projection objective, and exposure apparatus comprising such an element
JP5224667B2 (ja) 2005-09-29 2013-07-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20070099001A1 (en) * 2005-10-27 2007-05-03 Cymer, Inc. Blister resistant optical coatings
US7692855B2 (en) * 2006-06-28 2010-04-06 Essilor International Compagnie Generale D'optique Optical article having a temperature-resistant anti-reflection coating with optimized thickness ratio of low index and high index layers
JP2008020563A (ja) * 2006-07-11 2008-01-31 Murakami Corp 誘電体多層膜フィルタ
JP2008098299A (ja) * 2006-10-10 2008-04-24 Mitsubishi Electric Corp 半導体光素子及びその製造方法
EP1965229A3 (de) * 2007-02-28 2008-12-10 Corning Incorporated Manipulierte fluoridbeschichtete Elemente für Lasersysteme
DE102007025600B4 (de) * 2007-05-31 2009-05-28 Schott Ag Interferenzfilter und Verfahren zu dessen Herstellung
KR20100095134A (ko) 2009-02-20 2010-08-30 엘지이노텍 주식회사 발광소자 및 그 제조방법
US9835952B2 (en) 2013-03-14 2017-12-05 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for a narrow band high transmittance interference filter
KR20160034534A (ko) * 2014-09-19 2016-03-30 삼성전자주식회사 반도체 발광 소자
DE102015100091A1 (de) * 2015-01-07 2016-07-07 Rodenstock Gmbh Schichtsystem und optisches Element mit einem Schichtsystem
JP2017054105A (ja) * 2015-09-11 2017-03-16 旭硝子株式会社 マスクブランク
JP6549458B2 (ja) * 2015-09-30 2019-07-24 株式会社トプコン 反射防止膜、光学素子、及び眼科装置
US11650361B2 (en) * 2018-12-27 2023-05-16 Viavi Solutions Inc. Optical filter

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US3622225A (en) * 1969-12-22 1971-11-23 Union Carbide Corp Single plate laser beam polarizer
JPS62127701A (ja) * 1985-11-29 1987-06-10 Toshiba Corp 反射防止膜
US5764416A (en) * 1988-04-19 1998-06-09 Litton Systems, Inc. Fault tolerant antireflective coatings
US5339441A (en) * 1992-07-02 1994-08-16 Advanced Intervention Systems, Inc. Polarizing device with optically contacted thin film interface for high power density ultraviolet light
US5521759A (en) * 1993-06-07 1996-05-28 National Research Council Of Canada Optical filters for suppressing unwanted reflections
JP4034365B2 (ja) * 1995-03-09 2008-01-16 大日本印刷株式会社 超微粒子含有反射防止フィルム、偏光板及び液晶表示装置
JP3924806B2 (ja) * 1996-06-10 2007-06-06 株式会社ニコン 反射防止膜
US5925438A (en) * 1996-06-17 1999-07-20 Dai Nippon Printing Co., Ltd. Antireflection film
JP4161387B2 (ja) 1997-01-23 2008-10-08 株式会社ニコン 多層反射防止膜
JPH10253802A (ja) * 1997-03-07 1998-09-25 Nikon Corp 反射防止膜

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9933711B2 (en) 2011-10-26 2018-04-03 Carl Zeiss Smt Gmbh Optical element
US10642167B2 (en) 2011-10-26 2020-05-05 Carl Zeiss Smt Gmbh Optical element

Also Published As

Publication number Publication date
US6590702B1 (en) 2003-07-08
WO2000058761A1 (fr) 2000-10-05

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R016 Response to examination communication
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: G02B0001100000

Ipc: G02B0001110000

R079 Amendment of ipc main class

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Ipc: G02B0001110000

Effective date: 20111212

R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final

Effective date: 20140214