DE10196141T1 - Vergleichsleitungs-Abtastschaltung und -Verfahren - Google Patents

Vergleichsleitungs-Abtastschaltung und -Verfahren

Info

Publication number
DE10196141T1
DE10196141T1 DE10196141T DE10196141T DE10196141T1 DE 10196141 T1 DE10196141 T1 DE 10196141T1 DE 10196141 T DE10196141 T DE 10196141T DE 10196141 T DE10196141 T DE 10196141T DE 10196141 T1 DE10196141 T1 DE 10196141T1
Authority
DE
Germany
Prior art keywords
sampling circuit
line sampling
comparison line
comparison
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10196141T
Other languages
English (en)
Inventor
Stanley Jeh-Chun Ma
Peter P Ma
Valerie Lines
Peter Gillingham
Robert Mckenzie
Abdullah Ahmed
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Publication of DE10196141T1 publication Critical patent/DE10196141T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
DE10196141T 2000-05-01 2001-05-01 Vergleichsleitungs-Abtastschaltung und -Verfahren Withdrawn DE10196141T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CA2307240A CA2307240C (en) 2000-05-01 2000-05-01 Matchline sense circuit and method
PCT/CA2001/000628 WO2001084555A1 (en) 2000-05-01 2001-05-01 Matchline sense circuit and method

Publications (1)

Publication Number Publication Date
DE10196141T1 true DE10196141T1 (de) 2003-04-30

Family

ID=4166037

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10196141T Withdrawn DE10196141T1 (de) 2000-05-01 2001-05-01 Vergleichsleitungs-Abtastschaltung und -Verfahren

Country Status (8)

Country Link
US (3) US6987682B2 (de)
KR (1) KR100718902B1 (de)
CN (1) CN1251242C (de)
AU (1) AU2001258089A1 (de)
CA (1) CA2307240C (de)
DE (1) DE10196141T1 (de)
GB (1) GB2379541B (de)
WO (1) WO2001084555A1 (de)

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US7237156B1 (en) * 2001-08-03 2007-06-26 Netlogic Microsystems, Inc. Content addressable memory with error detection
US7283380B1 (en) 2001-08-03 2007-10-16 Netlogic Microsystems, Inc. Content addressable memory with selective error logging
US7257763B1 (en) 2001-08-03 2007-08-14 Netlogic Microsystems, Inc. Content addressable memory with error signaling
KR20030034748A (ko) * 2001-10-26 2003-05-09 삼성전자주식회사 멀티 연관 기억장치의 추가/삭제방법
US7301961B1 (en) 2001-12-27 2007-11-27 Cypress Semiconductor Corportion Method and apparatus for configuring signal lines according to idle codes
KR100435804B1 (ko) * 2002-06-28 2004-06-10 삼성전자주식회사 터너리 내용 주소화 메모리 장치
US6704216B1 (en) * 2002-08-15 2004-03-09 Integrated Silicon Solution, Inc. Dual match-line, twin-cell, binary-ternary CAM
US7006368B2 (en) 2002-11-07 2006-02-28 Mosaid Technologies Incorporated Mismatch-dependent power allocation technique for match-line sensing in content-addressable memories
KR100543930B1 (ko) * 2003-10-31 2006-01-20 주식회사 하이닉스반도체 카스레이턴시에 따라서 라이트회복시간의 조절이 가능한메모리 장치
KR101149816B1 (ko) * 2004-05-28 2012-05-25 삼성전자주식회사 캐쉬 메모리의 캐쉬 히트 로직
US7304873B1 (en) 2005-01-25 2007-12-04 Netlogic Microsystems, Inc. Method for on-the-fly error correction in a content addressable memory (CAM) and device therefor
US7372713B2 (en) * 2006-04-17 2008-05-13 Texas Instruments Incorporated Match sensing circuit for a content addressable memory device
US20070247885A1 (en) * 2006-04-25 2007-10-25 Renesas Technology Corp. Content addressable memory
US7471537B1 (en) 2006-06-23 2008-12-30 Integrated Device Technology, Ltd. Content addressable memories (CAM) having low power dynamic match line sensing circuits therein
US7391633B2 (en) * 2006-07-26 2008-06-24 Agere Systems Inc. Accelerated searching for content-addressable memory
US7474546B2 (en) 2007-04-02 2009-01-06 Sun Microsystems, Inc. Hybrid dual match line architecture for content addressable memories and other data structures
US7548365B2 (en) * 2007-06-06 2009-06-16 Texas Instruments Incorporated Semiconductor device and method comprising a high voltage reset driver and an isolated memory array
US20090129185A1 (en) * 2007-11-19 2009-05-21 Cassels John J Semiconductor circuits capable of self detecting defects
US7903461B2 (en) * 2008-09-22 2011-03-08 Micron Technology, Inc. Sensing for memory read and program verify operations in a non-volatile memory device
US8493764B2 (en) * 2011-02-10 2013-07-23 Lsi Corporation High density CAM array architectures with adaptive current controlled match-line discharge
US8990631B1 (en) 2011-03-03 2015-03-24 Netlogic Microsystems, Inc. Packet format for error reporting in a content addressable memory
JP6012263B2 (ja) 2011-06-09 2016-10-25 株式会社半導体エネルギー研究所 半導体記憶装置
WO2012169142A1 (en) * 2011-06-09 2012-12-13 Semiconductor Energy Laboratory Co., Ltd. Cache memory and method for driving the same
CN102522106B (zh) * 2011-12-13 2014-04-23 北京大学 高速低功耗wta灵敏放大器
CN102998607A (zh) * 2012-11-29 2013-03-27 上海集成电路研发中心有限公司 一种测量和表征mos晶体管器件失配特性的方法及系统
JP6767873B2 (ja) * 2014-11-21 2020-10-14 シャープ株式会社 アクティブマトリクス基板、及びそれを備えた表示装置
US9704575B1 (en) 2016-01-07 2017-07-11 Globalfoundries Inc. Content-addressable memory having multiple reference matchlines to reduce latency
US9583192B1 (en) * 2016-05-25 2017-02-28 Globalfoundries Inc. Matchline precharge architecture for self-reference matchline sensing
US9859006B1 (en) * 2016-06-17 2018-01-02 Globalfoundries Inc. Algorithmic N search/M write ternary content addressable memory (TCAM)
US10937475B1 (en) * 2019-10-24 2021-03-02 Renesas Elelctronics Corporation Content addressable memory
US11651819B2 (en) * 2020-07-24 2023-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Memory circuit and method of operating the same
CN111933198B (zh) * 2020-09-14 2021-02-05 新华三半导体技术有限公司 内容寻址存储器cam的匹配线检测电路
CN113113075B (zh) * 2021-06-11 2021-08-27 新华三半导体技术有限公司 芯片测试方法、装置、控制电路和芯片
TWI809944B (zh) * 2022-06-22 2023-07-21 旺宏電子股份有限公司 用以進行記憶體內搜尋之混和型內容可定址記憶體及其運作方法
TWI827137B (zh) * 2022-07-13 2023-12-21 旺宏電子股份有限公司 用於記憶體內搜尋的記憶體裝置及資料搜尋方法

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US4445201A (en) * 1981-11-30 1984-04-24 International Business Machines Corporation Simple amplifying system for a dense memory array
US5051948A (en) * 1988-02-23 1991-09-24 Mitsubishi Denki Kabushiki Kaisha Content addressable memory device
US5270591A (en) * 1992-02-28 1993-12-14 Xerox Corporation Content addressable memory architecture and circuits
US5446685A (en) * 1993-02-23 1995-08-29 Intergraph Corporation Pulsed ground circuit for CAM and PAL memories
JP3117375B2 (ja) * 1994-11-28 2000-12-11 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 連想メモリの制御回路及び連想メモリ装置
US5754463A (en) 1996-07-15 1998-05-19 Intel Corporation Multi-ported content addressable memory with precharge "non match"
US6125049A (en) * 1999-01-05 2000-09-26 Netlogic Microsystems, Inc. Match line control circuit for content addressable memory
US6044005A (en) * 1999-02-03 2000-03-28 Sibercore Technologies Incorporated Content addressable memory storage device
JP3478749B2 (ja) * 1999-02-05 2003-12-15 インターナショナル・ビジネス・マシーンズ・コーポレーション 連想メモリ（ｃａｍ）のワードマッチラインのプリチャージ回路および方法
CA2266062C (en) * 1999-03-31 2004-03-30 Peter Gillingham Dynamic content addressable memory cell
US6317349B1 (en) * 1999-04-16 2001-11-13 Sandisk Corporation Non-volatile content addressable memory
CA2273665A1 (en) * 1999-06-07 2000-12-07 Mosaid Technologies Incorporated Differential sensing amplifier for content addressable memory
JP4732596B2 (ja) * 2000-03-03 2011-07-27 川崎マイクロエレクトロニクス株式会社 連想メモリ装置
CA2299991A1 (en) * 2000-03-03 2001-09-03 Mosaid Technologies Incorporated A memory cell for embedded memories
CA2310295C (en) * 2000-05-31 2010-10-05 Mosaid Technologies Incorporated Multiple match detection circuit and method
US6373738B1 (en) * 2000-11-20 2002-04-16 International Business Machines Corporation Low power CAM match line circuit
US6430073B1 (en) * 2000-12-06 2002-08-06 International Business Machines Corporation Dram CAM cell with hidden refresh
US6442054B1 (en) * 2001-05-24 2002-08-27 Integrated Device Technology, Inc. Sense amplifier for content addressable memory
US6708250B2 (en) * 2001-09-28 2004-03-16 Mosaid Technologies Incorporated Circuit and method for performing variable width searches in a content addressable memory
CA2365891C (en) * 2001-10-31 2012-03-13 Mosaid Technologies Incorporated Priority encoder circuit and method for content addressable memory
CA2384039C (en) * 2001-12-28 2012-08-14 Mosaid Technologies Incorporated Low power content addressable memory architecture
US6768659B2 (en) * 2001-12-31 2004-07-27 Mosaid Technologies Incorporated Circuit and method for reducing power usage in a content addressable memory
US6836419B2 (en) * 2002-08-23 2004-12-28 Micron Technology, Inc. Split word line ternary CAM architecture
US6775166B2 (en) * 2002-08-30 2004-08-10 Mosaid Technologies, Inc. Content addressable memory architecture
US7006368B2 (en) * 2002-11-07 2006-02-28 Mosaid Technologies Incorporated Mismatch-dependent power allocation technique for match-line sensing in content-addressable memories
US7136961B2 (en) * 2002-11-13 2006-11-14 Mosaid Technologies, Inc. Method and apparatus for wide word deletion in content addressable memories
JP4282319B2 (ja) * 2002-12-13 2009-06-17 株式会社ルネサステクノロジ 半導体記憶装置

Also Published As

Publication number Publication date
GB2379541B (en) 2004-11-17
CA2307240C (en) 2011-04-12
GB2379541A (en) 2003-03-12
US6987682B2 (en) 2006-01-17
CN1251242C (zh) 2006-04-12
KR100718902B1 (ko) 2007-05-17
KR20030014210A (ko) 2003-02-15
US20030161194A1 (en) 2003-08-28
WO2001084555A1 (en) 2001-11-08
US7382638B2 (en) 2008-06-03
US20070258277A1 (en) 2007-11-08
CN1439160A (zh) 2003-08-27
AU2001258089A1 (en) 2001-11-12
GB0225063D0 (en) 2002-12-04
CA2307240A1 (en) 2001-11-01
US7251148B2 (en) 2007-07-31
US20060083041A1 (en) 2006-04-20

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: MOSAID TECHNOLOGIES INCORPORATED, OTTAWA, ONTA, CA

R016 Response to examination communication
R082 Change of representative

Representative=s name: WINTER, BRANDL, FUERNISS, HUEBNER, ROESS, KAIS, DE

R081 Change of applicant/patentee

Owner name: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT IN, CA

Free format text: FORMER OWNER: MOSAID TECHNOLOGIES INCORPORATED, OTTAWA, ONTARIO, CA

Effective date: 20141014

R082 Change of representative

Representative=s name: WINTER, BRANDL, FUERNISS, HUEBNER, ROESS, KAIS, DE

Effective date: 20141014

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee