DE10297191T5 - Phase-Change-Material-Speicherbauteil - Google Patents

Phase-Change-Material-Speicherbauteil Download PDF

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Publication number
DE10297191T5
DE10297191T5 DE10297191T DE10297191T DE10297191T5 DE 10297191 T5 DE10297191 T5 DE 10297191T5 DE 10297191 T DE10297191 T DE 10297191T DE 10297191 T DE10297191 T DE 10297191T DE 10297191 T5 DE10297191 T5 DE 10297191T5
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Germany
Prior art keywords
memory device
phase change
change material
material memory
phase
Prior art date
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Granted
Application number
DE10297191T
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English (en)
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DE10297191B4 (de
Inventor
Tyler A Lowrey
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Intel Corp
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Intel Corp
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Publication of DE10297191T5 publication Critical patent/DE10297191T5/de
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Publication of DE10297191B4 publication Critical patent/DE10297191B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/068—Patterning of the switching material by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa or cup type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8616—Thermal insulation means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
DE10297191T 2001-09-07 2002-08-20 Phasenwechselmaterial-Speicherbauteil und Verfahren zur Herstellung Expired - Fee Related DE10297191B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/948,830 2001-09-07
US09/948,830 US6586761B2 (en) 2001-09-07 2001-09-07 Phase change material memory device
PCT/US2002/026376 WO2003023875A2 (en) 2001-09-07 2002-08-20 Phase change material memory device

Publications (2)

Publication Number Publication Date
DE10297191T5 true DE10297191T5 (de) 2004-10-07
DE10297191B4 DE10297191B4 (de) 2009-07-23

Family

ID=25488290

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10297191T Expired - Fee Related DE10297191B4 (de) 2001-09-07 2002-08-20 Phasenwechselmaterial-Speicherbauteil und Verfahren zur Herstellung

Country Status (6)

Country Link
US (2) US6586761B2 (de)
KR (1) KR100595450B1 (de)
CN (1) CN100379046C (de)
DE (1) DE10297191B4 (de)
TW (1) TW559915B (de)
WO (1) WO2003023875A2 (de)

Families Citing this family (312)

* Cited by examiner, † Cited by third party
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KR100595450B1 (ko) 2006-06-30
US20030047762A1 (en) 2003-03-13
WO2003023875A2 (en) 2003-03-20
US6586761B2 (en) 2003-07-01
US6908812B2 (en) 2005-06-21
US20030201469A1 (en) 2003-10-30
CN100379046C (zh) 2008-04-02
CN1554125A (zh) 2004-12-08
DE10297191B4 (de) 2009-07-23
TW559915B (en) 2003-11-01
WO2003023875A3 (en) 2004-03-18
KR20040033017A (ko) 2004-04-17

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