DE19781818T1 - Verfahren und Vorrichtung für das chemische, mechanische Ebnen elektronischer Einrichtungen - Google Patents

Verfahren und Vorrichtung für das chemische, mechanische Ebnen elektronischer Einrichtungen

Info

Publication number
DE19781818T1
DE19781818T1 DE19781818T DE19781818T DE19781818T1 DE 19781818 T1 DE19781818 T1 DE 19781818T1 DE 19781818 T DE19781818 T DE 19781818T DE 19781818 T DE19781818 T DE 19781818T DE 19781818 T1 DE19781818 T1 DE 19781818T1
Authority
DE
Germany
Prior art keywords
chemical
electronic devices
mechanical leveling
leveling
mechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19781818T
Other languages
English (en)
Inventor
Clinton O Fruitman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Speedfam IPEC Corp
Original Assignee
Speedfam Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Speedfam Corp filed Critical Speedfam Corp
Publication of DE19781818T1 publication Critical patent/DE19781818T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
DE19781818T 1996-06-14 1997-06-06 Verfahren und Vorrichtung für das chemische, mechanische Ebnen elektronischer Einrichtungen Withdrawn DE19781818T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/662,678 US5769691A (en) 1996-06-14 1996-06-14 Methods and apparatus for the chemical mechanical planarization of electronic devices
PCT/US1997/009901 WO1997047433A1 (en) 1996-06-14 1997-06-06 Methods and apparatus for the chemical mechanical planarization of electronic devices

Publications (1)

Publication Number Publication Date
DE19781818T1 true DE19781818T1 (de) 1999-09-23

Family

ID=24658724

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19781818T Withdrawn DE19781818T1 (de) 1996-06-14 1997-06-06 Verfahren und Vorrichtung für das chemische, mechanische Ebnen elektronischer Einrichtungen

Country Status (7)

Country Link
US (2) US5769691A (de)
JP (1) JPH11512978A (de)
KR (1) KR20000016516A (de)
DE (1) DE19781818T1 (de)
GB (1) GB2329601B (de)
TW (1) TW431944B (de)
WO (1) WO1997047433A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6069080A (en) * 1992-08-19 2000-05-30 Rodel Holdings, Inc. Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like
US6099954A (en) 1995-04-24 2000-08-08 Rodel Holdings, Inc. Polishing material and method of polishing a surface
US5769691A (en) * 1996-06-14 1998-06-23 Speedfam Corp Methods and apparatus for the chemical mechanical planarization of electronic devices
US6139402A (en) 1997-12-30 2000-10-31 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates
US6780095B1 (en) 1997-12-30 2004-08-24 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates
US6106662A (en) * 1998-06-08 2000-08-22 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6221775B1 (en) * 1998-09-24 2001-04-24 International Business Machines Corp. Combined chemical mechanical polishing and reactive ion etching process
US6294106B1 (en) * 1998-10-21 2001-09-25 W. R. Grace & Co. -Conn. Slurries of abrasive inorganic oxide particles and method for adjusting the abrasiveness of the particles
TWI235115B (en) * 1998-10-26 2005-07-01 Scapa Group Plc Seamless, composite belts
US6390890B1 (en) 1999-02-06 2002-05-21 Charles J Molnar Finishing semiconductor wafers with a fixed abrasive finishing element
FR2785614B1 (fr) * 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
US6641463B1 (en) 1999-02-06 2003-11-04 Beaver Creek Concepts Inc Finishing components and elements
US6322425B1 (en) 1999-07-30 2001-11-27 Corning Incorporated Colloidal polishing of fused silica
EP1272580A2 (de) * 2000-04-11 2003-01-08 Cabot Microelectronics Corporation System zur vorzugsweisenden abtrennung von siliziumoxid
JP2002059356A (ja) * 2000-08-17 2002-02-26 Shin Etsu Handotai Co Ltd 半導体ウェーハの研磨方法
US6623355B2 (en) 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6350692B1 (en) * 2000-12-14 2002-02-26 Infineon Technologies Ag Increased polish removal rate of dielectric layers using fixed abrasive pads
US6863774B2 (en) * 2001-03-08 2005-03-08 Raytech Innovative Solutions, Inc. Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
US6852020B2 (en) * 2003-01-22 2005-02-08 Raytech Innovative Solutions, Inc. Polishing pad for use in chemical—mechanical planarization of semiconductor wafers and method of making same
US7037184B2 (en) * 2003-01-22 2006-05-02 Raytech Innovation Solutions, Llc Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
WO2004027840A2 (en) * 2002-09-18 2004-04-01 Memc Electronic Materials, Inc. Process for etching silicon wafers
US7449067B2 (en) * 2003-11-03 2008-11-11 International Business Machines Corporation Method and apparatus for filling vias
WO2017053685A1 (en) 2015-09-25 2017-03-30 Cabot Microelectronics Corporation Polyurethane cmp pads having a high modulus ratio

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048765A (en) * 1974-05-01 1977-09-20 The Manufacturers Brush Company Non-cellular polyurethane wheel in a process for finishing a metal workpiece
US4057939A (en) * 1975-12-05 1977-11-15 International Business Machines Corporation Silicon wafer polishing
DE3624878A1 (de) * 1985-07-31 1987-02-12 Speedfam Corp Flachlaeppmaschine
JPS6362673A (ja) * 1986-09-01 1988-03-18 Speedfam Co Ltd 定寸機構付き平面研磨装置
JPS6471661A (en) * 1987-09-09 1989-03-16 Showa Denko Kk Mirror polishing method for semiconductor wafer
EP0348757B1 (de) * 1988-06-28 1995-01-04 Mitsubishi Materials Silicon Corporation Verfahren zur Polierung eines Halbleiter-Plättchens
US5020283A (en) * 1990-01-22 1991-06-04 Micron Technology, Inc. Polishing pad with uniform abrasion
US5069002A (en) * 1991-04-17 1991-12-03 Micron Technology, Inc. Apparatus for endpoint detection during mechanical planarization of semiconductor wafers
US5329732A (en) * 1992-06-15 1994-07-19 Speedfam Corporation Wafer polishing method and apparatus
US5498199A (en) * 1992-06-15 1996-03-12 Speedfam Corporation Wafer polishing method and apparatus
MY114512A (en) * 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US5435772A (en) * 1993-04-30 1995-07-25 Motorola, Inc. Method of polishing a semiconductor substrate
US5486129A (en) * 1993-08-25 1996-01-23 Micron Technology, Inc. System and method for real-time control of semiconductor a wafer polishing, and a polishing head
US5489233A (en) * 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5534106A (en) * 1994-07-26 1996-07-09 Kabushiki Kaisha Toshiba Apparatus for processing semiconductor wafers
US5536202A (en) * 1994-07-27 1996-07-16 Texas Instruments Incorporated Semiconductor substrate conditioning head having a plurality of geometries formed in a surface thereof for pad conditioning during chemical-mechanical polish
EP0779655A3 (de) * 1995-12-14 1997-07-16 International Business Machines Corporation Verfahren zum chemisch-mechanischen Polieren eines Halbleitersubstrats eines elektronischen Bauteils
JPH1071661A (ja) * 1996-04-24 1998-03-17 Mitsui Petrochem Ind Ltd 防水材および防水層の施工方法
US5769691A (en) * 1996-06-14 1998-06-23 Speedfam Corp Methods and apparatus for the chemical mechanical planarization of electronic devices

Also Published As

Publication number Publication date
GB2329601B (en) 2000-07-12
US7083501B1 (en) 2006-08-01
KR20000016516A (ko) 2000-03-25
GB2329601A (en) 1999-03-31
US5769691A (en) 1998-06-23
WO1997047433A1 (en) 1997-12-18
GB9827129D0 (en) 1999-02-03
TW431944B (en) 2001-05-01
JPH11512978A (ja) 1999-11-09
GB2329601A8 (en) 1999-04-12

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: SPEEDFAM-IPEC CORP.(N.D.GES.D.STAATES DELAWARE), C

8139 Disposal/non-payment of the annual fee