DE19983565T1 - Interner Auffrisch-Modus für eine Flash-Speicherzellenmatrix - Google Patents

Interner Auffrisch-Modus für eine Flash-Speicherzellenmatrix

Info

Publication number
DE19983565T1
DE19983565T1 DE19983565T DE19983565T DE19983565T1 DE 19983565 T1 DE19983565 T1 DE 19983565T1 DE 19983565 T DE19983565 T DE 19983565T DE 19983565 T DE19983565 T DE 19983565T DE 19983565 T1 DE19983565 T1 DE 19983565T1
Authority
DE
Germany
Prior art keywords
memory cell
flash memory
refresh mode
cell matrix
internal refresh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19983565T
Other languages
English (en)
Other versions
DE19983565B4 (de
Inventor
Anil Gupta
Steve Schumann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Corp
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Publication of DE19983565T1 publication Critical patent/DE19983565T1/de
Application granted granted Critical
Publication of DE19983565B4 publication Critical patent/DE19983565B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
DE19983565T 1998-09-17 1999-09-14 Interner Auffrisch-Modus für eine Flash-Speicherzellenmatrix Expired - Fee Related DE19983565B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/156,213 1998-09-17
US09/156,213 US6088268A (en) 1998-09-17 1998-09-17 Flash memory array with internal refresh
PCT/US1999/021018 WO2000016338A1 (en) 1998-09-17 1999-09-14 Flash memory array with internal refresh

Publications (2)

Publication Number Publication Date
DE19983565T1 true DE19983565T1 (de) 2001-09-27
DE19983565B4 DE19983565B4 (de) 2007-06-28

Family

ID=22558602

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19983565T Expired - Fee Related DE19983565B4 (de) 1998-09-17 1999-09-14 Interner Auffrisch-Modus für eine Flash-Speicherzellenmatrix

Country Status (12)

Country Link
US (2) US6088268A (de)
EP (1) EP1147521B1 (de)
JP (1) JP2002525778A (de)
KR (1) KR100554605B1 (de)
CN (1) CN1221981C (de)
AU (1) AU6388199A (de)
CA (1) CA2341706A1 (de)
DE (1) DE19983565B4 (de)
HK (1) HK1041554B (de)
NO (1) NO20011274D0 (de)
RU (1) RU2224303C2 (de)
WO (1) WO2000016338A1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6088268A (en) * 1998-09-17 2000-07-11 Atmel Corporation Flash memory array with internal refresh
US6662263B1 (en) 2000-03-03 2003-12-09 Multi Level Memory Technology Sectorless flash memory architecture
US7079422B1 (en) * 2000-04-25 2006-07-18 Samsung Electronics Co., Ltd. Periodic refresh operations for non-volatile multiple-bit-per-cell memory
FR2816750B1 (fr) 2000-11-15 2003-01-24 St Microelectronics Sa Memoire flash comprenant des moyens de controle de la tension de seuil de cellules memoire
US6466476B1 (en) 2001-01-18 2002-10-15 Multi Level Memory Technology Data coding for multi-bit-per-cell memories having variable numbers of bits per memory cell
DE60129294D1 (de) * 2001-02-19 2007-08-23 St Microelectronics Srl Verfahren zur Auffrischung der gespeicherten Daten in einem elektrisch lösch- und programmierbaren nichtflüchtigen Speicher
DE10126486A1 (de) * 2001-05-31 2002-12-05 Abb Patent Gmbh Verfahren und Einrichtung zur Vermeidung von Langzeitdatenverlusten in geräteinternen oder -externen Speichermedien
US6421276B1 (en) * 2001-08-09 2002-07-16 Tower Semiconductor Ltd. Method and apparatus for controlling erase operations of a non-volatile memory system
US6751127B1 (en) 2002-04-24 2004-06-15 Macronix International, Co. Ltd. Systems and methods for refreshing non-volatile memory
US6633500B1 (en) 2002-04-26 2003-10-14 Macronix International Co., Ltd. Systems and methods for refreshing a non-volatile memory using a token
US7512975B2 (en) * 2002-08-16 2009-03-31 Intel Corporation Hardware-assisted credential validation
US7010644B2 (en) * 2002-08-29 2006-03-07 Micron Technology, Inc. Software refreshed memory device and method
US20040153902A1 (en) * 2003-01-21 2004-08-05 Nexflash Technologies, Inc. Serial flash integrated circuit having error detection and correction
FR2856186A1 (fr) * 2003-06-12 2004-12-17 St Microelectronics Sa Memoire flash comprenant des moyens de controle et de rafraichissement de cellules memoire dans l'etat efface
KR100634440B1 (ko) * 2004-11-05 2006-10-16 삼성전자주식회사 오토-리프레쉬 명령에 선별적으로 동작하는 디램, 그것의오토-리프레쉬 동작을 제어하는 메모리, 디램 및 메모리를포함한 메모리 시스템, 그리고 그것의 동작 방법들
US7238569B2 (en) * 2005-04-25 2007-07-03 Spansion Llc Formation method of an array source line in NAND flash memory
US7319617B2 (en) * 2005-05-13 2008-01-15 Winbond Electronics Corporation Small sector floating gate flash memory
US7362610B1 (en) * 2005-12-27 2008-04-22 Actel Corporation Programming method for non-volatile memory and non-volatile memory-based programmable logic device
KR100673027B1 (ko) 2006-01-31 2007-01-24 삼성전자주식회사 고온 스트레스로 인해 감소된 읽기 마진을 보상할 수 있는불 휘발성 메모리 장치
US7616508B1 (en) 2006-08-10 2009-11-10 Actel Corporation Flash-based FPGA with secure reprogramming
US8767450B2 (en) * 2007-08-21 2014-07-01 Samsung Electronics Co., Ltd. Memory controllers to refresh memory sectors in response to writing signals and memory systems including the same
KR20100134375A (ko) * 2009-06-15 2010-12-23 삼성전자주식회사 리프레쉬 동작을 수행하는 메모리 시스템
US8161355B2 (en) * 2009-02-11 2012-04-17 Mosys, Inc. Automatic refresh for improving data retention and endurance characteristics of an embedded non-volatile memory in a standard CMOS logic process
US8243525B1 (en) 2009-09-30 2012-08-14 Western Digital Technologies, Inc. Refreshing non-volatile semiconductor memory by reading without rewriting
KR101577721B1 (ko) 2010-07-09 2015-12-29 삼성전자주식회사 메모리 시스템 및 그것의 리프레쉬 방법
KR20120012056A (ko) * 2010-07-30 2012-02-09 주식회사 하이닉스반도체 메모리장치
US9361986B2 (en) 2011-09-19 2016-06-07 Sandisk Technologies Inc. High endurance non-volatile storage
KR101991437B1 (ko) 2012-08-30 2019-06-20 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그의 동작방법
CN103426475A (zh) * 2013-08-06 2013-12-04 广东博观科技有限公司 一种降低芯片块擦除时间的方法和装置
JP5981906B2 (ja) * 2013-12-17 2016-08-31 京セラドキュメントソリューションズ株式会社 画像形成装置
TWI503843B (zh) * 2014-01-08 2015-10-11 Winbond Electronics Corp 適應性刷新裝置與方法
US9772901B2 (en) 2015-05-08 2017-09-26 Nxp Usa, Inc. Memory reliability using error-correcting code

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783766A (en) * 1986-05-30 1988-11-08 Seeq Technology, Inc. Block electrically erasable EEPROM
JP2633252B2 (ja) * 1987-06-11 1997-07-23 沖電気工業株式会社 半導体記憶装置
KR960002006B1 (ko) * 1991-03-12 1996-02-09 가부시끼가이샤 도시바 2개의 기준 레벨을 사용하는 기록 검증 제어기를 갖는 전기적으로 소거 가능하고 프로그램 가능한 불휘발성 메모리 장치
JP2870328B2 (ja) * 1992-11-12 1999-03-17 日本電気株式会社 不揮発性半導体記憶装置
US5365486A (en) * 1992-12-16 1994-11-15 Texas Instruments Incorporated Method and circuitry for refreshing a flash electrically erasable, programmable read only memory
US5511020A (en) * 1993-11-23 1996-04-23 Monolithic System Technology, Inc. Pseudo-nonvolatile memory incorporating data refresh operation
US5606532A (en) * 1995-03-17 1997-02-25 Atmel Corporation EEPROM array with flash-like core
US5699297A (en) * 1995-05-30 1997-12-16 Kabushiki Kaisha Toshiba Method of rewriting data in a microprocessor additionally provided with a flash memory
FR2745114B1 (fr) * 1996-02-20 1998-04-17 Sgs Thomson Microelectronics Memoire non volatile multiniveau modifiable electriquement avec rafraichissement autonome
US5777923A (en) * 1996-06-17 1998-07-07 Aplus Integrated Circuits, Inc. Flash memory read/write controller
US5764568A (en) * 1996-10-24 1998-06-09 Micron Quantum Devices, Inc. Method for performing analog over-program and under-program detection for a multistate memory cell
US5822245A (en) * 1997-03-26 1998-10-13 Atmel Corporation Dual buffer flash memory architecture with multiple operating modes
US6088268A (en) * 1998-09-17 2000-07-11 Atmel Corporation Flash memory array with internal refresh

Also Published As

Publication number Publication date
NO20011274L (no) 2001-03-13
HK1041554B (zh) 2006-07-07
JP2002525778A (ja) 2002-08-13
WO2000016338A1 (en) 2000-03-23
RU2224303C2 (ru) 2004-02-20
AU6388199A (en) 2000-04-03
HK1041554A1 (en) 2002-07-12
EP1147521A1 (de) 2001-10-24
US6088268A (en) 2000-07-11
WO2000016338A9 (en) 2000-08-17
KR100554605B1 (ko) 2006-02-24
EP1147521B1 (de) 2006-12-27
CN1221981C (zh) 2005-10-05
NO20011274D0 (no) 2001-03-13
CA2341706A1 (en) 2000-03-23
KR20010103582A (ko) 2001-11-23
DE19983565B4 (de) 2007-06-28
US6166959A (en) 2000-12-26
CN1319234A (zh) 2001-10-24

Similar Documents

Publication Publication Date Title
DE19983565T1 (de) Interner Auffrisch-Modus für eine Flash-Speicherzellenmatrix
DE69929943D1 (de) Ein Leseverstärker für Speicherzellen
DE69706550T2 (de) Zwei-transistor-flash-speicherzelle
DE69829011D1 (de) Referenz zelle für ferroelektrischen 1T/1C-Speicher
DE69937259D1 (de) Nichtflüchtiges Speicherregister
DE60119199D1 (de) Speicherzelle
DE50104980D1 (de) Wärmetauscherstruktur für mehrere elektrochemische speicherzellen
DE69521705D1 (de) Abtastverfahren für einen flash-speicher mit mehrstufigen zellen
DE69424771T2 (de) Anordnung zum Lesen einer Speicherzellenmatrix
DE60201203D1 (de) Kaschierter Leseleiter für eine Tunnelübergang-Speicherzelle
DE69835896D1 (de) Leseverstärker für flash-speicher
DE69936654D1 (de) Speicheranordnung
DE69921737D1 (de) Magnetische Speicherzelle
DE69517060D1 (de) Spannungsreduzierung für nichtflüchtige Speicherzelle
DE69614787T2 (de) Speichermatrix mit mehrzustandsspeicherzellen
DE59900872D1 (de) Speicherzellenanordnung und entsprechendes Herstellungsverfahren
DE69425367T2 (de) Leseschaltkreis für Speichermatrixzelle
DE60301119D1 (de) Nichtflüchtige SRAM Speicherzelle
DE69531141D1 (de) Einseitige Zweitorspeicherzelle
DE60042811D1 (de) Herstellungsverfahren für eine ferroelektrische Speichervorrichtung
DE59803426D1 (de) Speicherzellenanordnung und entsprechendes Herstellungsverfahren
DE69525413D1 (de) Matrix für Carbonat-Brennstoffzelle
DE50014731D1 (de) Speicherzellenanordnung
DE69707169T2 (de) Programmierung für nicht-flüchtige Speicherzelle
DE60325343D1 (de) Verbessertes löschverfahren für eine doppelbit-speicherzelle

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee