DE2860169D1 - Method for fabricating tantalum contacts on a n-type conducting silicon semiconductor substrate - Google Patents

Method for fabricating tantalum contacts on a n-type conducting silicon semiconductor substrate

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Publication number
DE2860169D1
DE2860169D1 DE7878100525T DE2860169T DE2860169D1 DE 2860169 D1 DE2860169 D1 DE 2860169D1 DE 7878100525 T DE7878100525 T DE 7878100525T DE 2860169 T DE2860169 T DE 2860169T DE 2860169 D1 DE2860169 D1 DE 2860169D1
Authority
DE
Germany
Prior art keywords
semiconductor substrate
silicon semiconductor
type conducting
conducting silicon
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7878100525T
Other languages
English (en)
Inventor
Hormazdyar Minocher Dalal
Majid Ghafghaichi
Lucian Alexander Kasprzak
Hans Wimpfheimer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE2860169D1 publication Critical patent/DE2860169D1/de
Expired legal-status Critical Current

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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DE7878100525T 1977-08-26 1978-07-27 Method for fabricating tantalum contacts on a n-type conducting silicon semiconductor substrate Expired DE2860169D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/827,912 US4215156A (en) 1977-08-26 1977-08-26 Method for fabricating tantalum semiconductor contacts

Publications (1)

Publication Number Publication Date
DE2860169D1 true DE2860169D1 (en) 1980-12-18

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Application Number Title Priority Date Filing Date
DE7878100525T Expired DE2860169D1 (en) 1977-08-26 1978-07-27 Method for fabricating tantalum contacts on a n-type conducting silicon semiconductor substrate

Country Status (6)

Country Link
US (1) US4215156A (de)
EP (1) EP0000743B1 (de)
JP (1) JPS5932069B2 (de)
CA (1) CA1111570A (de)
DE (1) DE2860169D1 (de)
IT (1) IT1158954B (de)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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CA1111570A (en) 1981-10-27
IT7826099A0 (it) 1978-07-26
JPS5932069B2 (ja) 1984-08-06
JPS5436178A (en) 1979-03-16
EP0000743B1 (de) 1980-09-17
EP0000743A1 (de) 1979-02-21
US4215156A (en) 1980-07-29
IT1158954B (it) 1987-02-25

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