DE2962684D1 - Method of fabricating a field effect transistor - Google Patents

Method of fabricating a field effect transistor

Info

Publication number
DE2962684D1
DE2962684D1 DE7979300998T DE2962684T DE2962684D1 DE 2962684 D1 DE2962684 D1 DE 2962684D1 DE 7979300998 T DE7979300998 T DE 7979300998T DE 2962684 T DE2962684 T DE 2962684T DE 2962684 D1 DE2962684 D1 DE 2962684D1
Authority
DE
Germany
Prior art keywords
fabricating
field effect
effect transistor
transistor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7979300998T
Other languages
English (en)
Inventor
Brian Thomas Hughes
Reuben Redstone
John Charles Vokes
David Robert Wight
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Application granted granted Critical
Publication of DE2962684D1 publication Critical patent/DE2962684D1/de
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4825—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8126—Thin film MESFET's
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/838—Bonding techniques
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    • H01L2924/1025—Semiconducting materials
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
DE7979300998T 1978-05-31 1979-05-30 Method of fabricating a field effect transistor Expired DE2962684D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB25553/78A GB1602498A (en) 1978-05-31 1978-05-31 Fet devices and their fabrication

Publications (1)

Publication Number Publication Date
DE2962684D1 true DE2962684D1 (en) 1982-06-24

Family

ID=10229555

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7979300998T Expired DE2962684D1 (en) 1978-05-31 1979-05-30 Method of fabricating a field effect transistor

Country Status (7)

Country Link
US (1) US4325073A (de)
EP (1) EP0006002B1 (de)
JP (1) JPS54158882A (de)
AU (1) AU4758479A (de)
DE (1) DE2962684D1 (de)
FR (1) FR2427689A1 (de)
GB (1) GB1602498A (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4387386A (en) * 1980-06-09 1983-06-07 The United States Of America As Represented By The Secretary Of The Army Microwave controlled field effect switching device
US4532695A (en) * 1982-07-02 1985-08-06 The United States Of America As Represented By The Secretary Of The Air Force Method of making self-aligned IGFET
JPS5910988A (ja) * 1982-07-12 1984-01-20 ホシデン株式会社 カラ−液晶表示器
US4507845A (en) * 1983-09-12 1985-04-02 Trw Inc. Method of making field effect transistors with opposed source _and gate regions
JPS6085567A (ja) * 1983-10-17 1985-05-15 Mitsubishi Electric Corp 電界効果トランジスタ
DE3476841D1 (en) * 1983-11-29 1989-03-30 Fujitsu Ltd Compound semiconductor device and method of producing it
IT1175541B (it) * 1984-06-22 1987-07-01 Telettra Lab Telefon Procedimento per la connessione a terra di dispositivi planari e circuiti integrati e prodotti cosi' ottenuti
US4784967A (en) * 1986-12-19 1988-11-15 American Telephone And Telegraph Company, At&T Bell Laboratories Method for fabricating a field-effect transistor with a self-aligned gate
US4789645A (en) * 1987-04-20 1988-12-06 Eaton Corporation Method for fabrication of monolithic integrated circuits
JPS6415913A (en) * 1987-07-09 1989-01-19 Mitsubishi Monsanto Chem Epitaxial growth method of substrate for high-brightness led
US5283201A (en) * 1988-05-17 1994-02-01 Advanced Power Technology, Inc. High density power device fabrication process
DE59010851D1 (de) * 1989-04-27 1998-11-12 Max Planck Gesellschaft Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren
US4927782A (en) * 1989-06-27 1990-05-22 The United States Of America As Represented By The Secretary Of The Navy Method of making self-aligned GaAs/AlGaAs FET's
US5013681A (en) * 1989-09-29 1991-05-07 The United States Of America As Represented By The Secretary Of The Navy Method of producing a thin silicon-on-insulator layer
US5196358A (en) * 1989-12-29 1993-03-23 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing InP junction FETS and junction HEMTS using dual implantation and double nitride layers
US5385865A (en) * 1990-04-26 1995-01-31 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
JPH08321512A (ja) * 1995-05-25 1996-12-03 Murata Mfg Co Ltd 電界効果トランジスタとその製造方法

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
US4193836A (en) * 1963-12-16 1980-03-18 Signetics Corporation Method for making semiconductor structure
US3332137A (en) * 1964-09-28 1967-07-25 Rca Corp Method of isolating chips of a wafer of semiconductor material
DE1514943C3 (de) * 1966-03-18 1974-09-12 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zur Herstellung von Halbleiteranordnungen
US3621565A (en) * 1969-06-12 1971-11-23 Nasa Fabrication of single-crystal film semiconductor devices
JPS4914381B1 (de) * 1969-09-01 1974-04-06
JPS4839868B1 (de) * 1969-09-19 1973-11-27
US3914137A (en) * 1971-10-06 1975-10-21 Motorola Inc Method of manufacturing a light coupled monolithic circuit by selective epitaxial deposition
US3823467A (en) * 1972-07-07 1974-07-16 Westinghouse Electric Corp Solid-state circuit module
US3972770A (en) * 1973-07-23 1976-08-03 International Telephone And Telegraph Corporation Method of preparation of electron emissive materials
GB1480592A (en) * 1973-11-02 1977-07-20 Marconi Co Ltd Light emitting diodes
NL7505134A (nl) * 1975-05-01 1976-11-03 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting.
IT1041193B (it) * 1975-08-08 1980-01-10 Selenia Ind Elettroniche Perfezionamenti nei procedimenti per la fabbricazione di dispositivi a semiconduttor
FR2328290A1 (fr) * 1975-10-14 1977-05-13 Thomson Csf Nouvelles structures a effet de champ
FR2328292A1 (fr) * 1975-10-14 1977-05-13 Thomson Csf Nouvelles structures a effet de champ
FR2386903A1 (fr) * 1977-04-08 1978-11-03 Thomson Csf Transistor a effet de champ sur support a grande bande interdite

Also Published As

Publication number Publication date
EP0006002A1 (de) 1979-12-12
US4325073A (en) 1982-04-13
EP0006002B1 (de) 1982-05-05
FR2427689A1 (fr) 1979-12-28
AU4758479A (en) 1979-12-06
GB1602498A (en) 1981-11-11
JPS54158882A (en) 1979-12-15

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